CN210535686U - Structure for improving flip LED die bonding yield - Google Patents
Structure for improving flip LED die bonding yield Download PDFInfo
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- CN210535686U CN210535686U CN201921739328.XU CN201921739328U CN210535686U CN 210535686 U CN210535686 U CN 210535686U CN 201921739328 U CN201921739328 U CN 201921739328U CN 210535686 U CN210535686 U CN 210535686U
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Abstract
A structure for improving the die bonding yield of an inverted LED comprises an ejector pin, a metal electrode and an inorganic insulating medium layer, wherein the inorganic insulating medium layer and the metal electrode are arranged above the ejector pin, the metal electrode is arranged on the inorganic insulating medium layer, the lower part of the inorganic insulating medium layer is provided with an organic insulating buffer medium protection block, the organic insulating buffer medium protection block is arranged right above the ejector pin, and the upper part of the inorganic insulating medium layer is sequentially provided with a P-type gallium nitride epitaxial layer, a gallium nitride epitaxial light-emitting layer, an N-type gallium nitride epitaxial layer and a sapphire substrate from bottom to top; the utility model discloses can effectively protect inorganic insulating medium, inorganic insulating medium layer is difficult to be hindered by the thimble top, effectively prevents to cause the damaged electric leakage short circuit of chip to improve solid brilliant yield greatly.
Description
Technical Field
The utility model relates to a LED production technical field especially relates to a improve structure of flip-chip LED solid brilliant yield.
Background
In the process of producing the LED at present, the flip-chip LED die bonding yield is low. The main reason for the low yield is that in the die bonding process, the thimble pierces the blue film and then pierces the middle inorganic insulating dielectric layer of the flip-chip LED chip, and the inorganic insulating dielectric layer is an inorganic thin film, and the inorganic insulating dielectric layer is hard and fragile and is easy to be damaged by the top, which causes the chip damage, the electric leakage and the short circuit, thereby causing the low die bonding yield.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects of the prior art, the utility model aims to provide a structure for improving the flip-chip LED die bonding yield, which can effectively protect inorganic insulating media, thereby greatly improving the die bonding yield.
The utility model adopts the technical proposal that: a structure for improving the die bonding yield of an inverted LED comprises an ejector pin, a metal electrode and an inorganic insulating medium layer, wherein the inorganic insulating medium layer and the metal electrode are arranged above the ejector pin, the metal electrode is arranged on the inorganic insulating medium layer, an organic insulating buffer medium protection block is arranged at the lower part of the inorganic insulating medium layer, the organic insulating buffer medium protection block is arranged right above the ejector pin, and a P-type gallium nitride epitaxial layer, a gallium nitride epitaxial light-emitting layer, an N-type gallium nitride epitaxial layer and a sapphire substrate are sequentially arranged at the upper part of the inorganic insulating medium layer from bottom to top.
Preferably, the organic insulating buffer dielectric protection block is a silica buffer dielectric protection block.
Preferably, the organic insulating buffer medium protection block is a titanium dioxide buffer medium protection block.
Preferably, the organic insulating buffer dielectric protection block is a silicon nitride buffer dielectric protection block.
Compared with the prior art, the utility model discloses following beneficial effect has: a improve structure of flip-chip LED solid brilliant yield, can effectively protect inorganic insulating medium, inorganic insulating medium layer is difficult to be hindered by the thimble top, effectively prevents to cause the damaged electric leakage short circuit of chip to improve solid brilliant yield greatly.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, a structure for improving die bonding yield of a flip-chip LED includes a thimble 1, a metal electrode 2 and an inorganic insulating medium layer 3, the inorganic insulating medium layer 3 and the metal electrode 2 are both disposed above the thimble 1, the metal electrode 2 is mounted on the inorganic insulating medium layer 3, an organic insulating buffer medium protection block 4 is disposed at a lower portion of the inorganic insulating medium layer 3, the organic insulating buffer medium protection block 4 is disposed right above the thimble 1, and a P-type gallium nitride epitaxial layer 5, a gallium nitride epitaxial light-emitting layer 6, an N-type gallium nitride epitaxial layer 7 and a sapphire substrate 8 are sequentially disposed from bottom to top at an upper portion of the inorganic insulating medium layer 3.
When the thimble 1 is pushed upwards, the organic insulating buffer medium protection block 4 is firstly pushed, and the organic insulating buffer medium protection block 4 plays a buffer role, so that the organic insulating buffer medium protection block 4 protects the inorganic insulating medium layer 3. The organic insulating buffer medium protection block 4 has certain hardness and good toughness, can effectively block the top prick of the thimble 1, and ensures the integrity of the inorganic insulating medium layer 3, thereby greatly improving the die bonding yield. The upper part of the inorganic insulating medium layer 3 is sequentially provided with a P-type gallium nitride epitaxial layer 5, a gallium nitride epitaxial light-emitting layer 6, an N-type gallium nitride epitaxial layer 7 and a sapphire substrate 8 from bottom to top, and the structure arrangement also prevents the thimble 1 from influencing the P-type gallium nitride epitaxial layer 5, the gallium nitride epitaxial light-emitting layer 6, the N-type gallium nitride epitaxial layer 7 and the sapphire substrate 8, so that the inverted structure is more stable.
The organic insulating buffer dielectric protection block 4 is preferably a silica buffer dielectric protection block.
The organic insulating buffer medium protection block 4 is preferably a titanium dioxide buffer medium protection block.
The organic insulating buffer dielectric protection block 4 is preferably a silicon nitride buffer dielectric protection block.
The above embodiments are based on the technical solution of the present invention, and detailed implementation and specific operation processes are given, but the present invention is not limited to the above embodiments.
Claims (4)
1. The utility model provides an improve structure of flip-chip LED solid brilliant yield, includes thimble (1), metal electrode (2) and inorganic insulating medium layer (3), and inorganic insulating medium layer (3) and metal electrode (2) all set up in thimble (1) top, and metal electrode (2) are installed on inorganic insulating medium layer (3), its characterized in that: the organic insulating buffer medium protection block (4) is arranged on the lower portion of the inorganic insulating medium layer (3), the organic insulating buffer medium protection block (4) is arranged right above the thimble (1), and the P-type gallium nitride epitaxial layer (5), the gallium nitride epitaxial light-emitting layer (6), the N-type gallium nitride epitaxial layer (7) and the sapphire substrate (8) are sequentially arranged on the upper portion of the inorganic insulating medium layer (3) from bottom to top.
2. The structure of claim 1, wherein the structure for improving die attach yield of the flip-chip LED comprises: the organic insulating buffer dielectric protection block (4) is a silicon dioxide buffer dielectric protection block.
3. The structure of claim 1, wherein the structure for improving die attach yield of the flip-chip LED comprises: the organic insulating buffer medium protection block (4) is a titanium dioxide buffer medium protection block.
4. The structure of claim 1, wherein the structure for improving die attach yield of the flip-chip LED comprises: the organic insulating buffer dielectric protection block (4) is a silicon nitride buffer dielectric protection block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921739328.XU CN210535686U (en) | 2019-10-16 | 2019-10-16 | Structure for improving flip LED die bonding yield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921739328.XU CN210535686U (en) | 2019-10-16 | 2019-10-16 | Structure for improving flip LED die bonding yield |
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| Publication Number | Publication Date |
|---|---|
| CN210535686U true CN210535686U (en) | 2020-05-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201921739328.XU Active CN210535686U (en) | 2019-10-16 | 2019-10-16 | Structure for improving flip LED die bonding yield |
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| CN (1) | CN210535686U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112823427A (en) * | 2020-07-03 | 2021-05-18 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| CN113903836A (en) * | 2021-09-07 | 2022-01-07 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
-
2019
- 2019-10-16 CN CN201921739328.XU patent/CN210535686U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112823427A (en) * | 2020-07-03 | 2021-05-18 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| WO2022000474A1 (en) * | 2020-07-03 | 2022-01-06 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| CN112823427B (en) * | 2020-07-03 | 2023-02-03 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| CN113903836A (en) * | 2021-09-07 | 2022-01-07 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
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