CN115516621A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN115516621A
CN115516621A CN202080100674.2A CN202080100674A CN115516621A CN 115516621 A CN115516621 A CN 115516621A CN 202080100674 A CN202080100674 A CN 202080100674A CN 115516621 A CN115516621 A CN 115516621A
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Prior art keywords
insulated
semiconductor device
semiconductor element
wire
substrate
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CN202080100674.2A
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山崎浩次
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本公开的目的在于提供一种能够实现装置的小型化、并且确保焊料接合部中的接合可靠性的半导体装置。而且，在本公开的半导体装置(51)中，多个绝缘包覆导线(7)分别使中央区域的绝缘包覆部(72)与半导体元件(1)的表面接触且跨越半导体元件(1)将一端以及另一端接合到DBC基板(8)的上电极(3)中的连接区域(3b)。多个绝缘包覆导线(7)与多个金属导线(6)同样地沿着X方向设置。多个绝缘包覆导线(7)分别以无松弛的状态设置，所以具有向焊料接合部(2)的方向按压半导体元件(1)的按压力。

Description

半导体装置及其制造方法
技术领域
本公开涉及使用焊料对基板连接半导体元件的结构的半导体装置及其制造方法。
背景技术
近年来，对半导体装置的可靠性要求越来越高，特别要求提高关于将热膨胀系数差大的半导体元件和电路基板接合的接合部的寿命可靠性。
以往，作为半导体元件，广泛使用将硅(Si)、镓砷(GaAs)作为构成材料的元件，其动作温度是100℃～125℃。作为将这些半导体元件接合到电路基板的焊料部件，要求满足用于应对制造时的多阶段焊料接合的高熔点、针对与起动/停止相伴的反复热应力的耐裂纹性、以及器件的耐污染性的焊料部件。
针对该要求，使用将以下材料作为构成材料的焊料部件：在Si器件中是95Pb-5Sn(质量％)，在镓砷器件中是80Au-20Sn(质量％)等。然而，含有大量有害的铅(Pb)的95Pb-5Sn从环境负荷降低的观点来看存在问题，并且包含大量贵金属的80Au-20Sn从贵金属高价、储藏量这点上存在问题，都强烈期待替代材料的必要性。
另一方面，为了电力用半导体装置的输出提高/小型化，存在作为下一代器件采用碳化硅(SiC)等宽带隙半导体来实现高电流密度化以及高运转温度化的倾向。因此，在半导体元件下的焊料接合部中要求较高的接合可靠性。
如专利文献1所示，示出在对半导体元件反复进行通电ON/OFF而使半导体元件发热的功率循环试验中，相对焊料接合部在垂直方向上产生纵向破裂。在专利文献1中公开了，在发生纵向破裂后，纵向破裂宽度增大而散热性降低，裂纹从焊料接合部的脆弱的部位发展而变成不良状况。
在专利文献2中公开的半导体装置中，为了实现焊料接合部的纵向破裂对策，采用作为押入部件发挥功能的按压板。上述半导体装置中，由于与焊料接合部的产生纵向破裂的空间量对应地焊料接合厚度增大，所以利用按压板以使半导体元件和绝缘基板更密接的方式按压，以避免该焊料接合厚度增大。通过按压板的上述按压功能，以不使绝缘基板与半导体元件之间的焊料厚度增加的方式进行控制，所以抑制焊料中央部的纵向破裂。
另外，在专利文献3中公开的半导体装置中，将接触到与固定于DBC(Direct BondCopper)基板上的半导体元件的上表面电极层连接的上表面侧导体的金属板设置成押入部件。在专利文献3中公开的半导体装置中，金属板以向半导体元件方向按压上表面侧导体的方式与金属板固定用DBC基板的铜电路箔连接。进而，上述半导体装置具有将成为进行半导体元件以及上表面侧导体的定位的引导件的框体固定到DBC基板上的接合构造。
现有技术文献
专利文献
专利文献1：国际公开第2012/077228号
专利文献2：日本特开2017-135183号公报
专利文献3：日本特开2011-176087号公报
发明内容
为了抑制专利文献1所示的在功率循环试验时产生的在半导体元件下的焊料接合部中产生的纵向破裂，如专利文献2以及专利文献3公开，设置用于押住焊料接合部的押入部件的构造成为有效的手段。即，作为押入部件，在专利文献2中公开的半导体装置采用按压板，在专利文献3中公开的半导体装置采用金属板。
一般而言，焊料接合部的厚度难以均匀地形成，焊料接合部的膜厚不均匀的情况较多。在对具有膜厚不均匀的焊料接合部的半导体装置使用押入部件隔着半导体元件按压焊料接合部的情况下，成为仅触碰到半导体元件的单侧的部分接触状态。因此，难以对具有膜厚不均匀的焊料接合部的半导体装置稳定地押住焊料接合部。
在此，将在发生部分接触状态时通过押入部件充分按压的半导体元件的区域设为适当按压区域，将通过押入部件未充分按压的半导体元件的区域设为不完全按压区域。
在如上述的情况下，在焊料接合部中，在半导体元件的不完全按压区域下的区域中产生纵向破裂，焊料接合厚度过剩地增大。因此，焊料接合部的散热性极端降低，其结果，存在在功率循环试验时使半导体元件自身破坏的可能性高这样的问题。
进而，在专利文献3公开的半导体装置中采用的金属板的情况下，如果金属板的表面粗糙，则在通电时在点连接状态下接触电阻不稳定，由于功率循环试验时的通电而局部地产生过加热部，过早变得接合不良。
另外，在具有押入部件的半导体装置的情况下，多余地设置按压板或金属板，所以存在半导体装置内的包括押入部件的接合构造部大型化从而作为功率模块的尺寸变大的问题。
在本公开中，其目的在于提供一种能够解决如上述的问题并实现装置的小型化而且确保焊料接合部中的接合可靠性的半导体装置。
本公开的半导体装置具备：基板；以及半导体元件，在所述基板上隔着焊料接合部设置，所述基板和所述半导体元件通过所述焊料接合部接合，还具备：金属导线，一端与所述半导体元件连接，另一端与所述基板连接；以及绝缘包覆导线，具有导线部和覆盖所述导线部地设置的绝缘包覆部，与所述金属导线独立地设置，跨越所述半导体元件将一端以及另一端与所述基板连接，所述绝缘包覆导线以所述绝缘包覆部与所述半导体元件的表面接触的形式设置，具有向所述焊料接合部的方向按压所述半导体元件的按压力。
本公开的半导体装置中的绝缘包覆导线具有向焊料接合部的方向按压半导体元件的按压力。
因此，本公开的半导体装置起到能够抑制由于焊料接合部的纵向破裂产生的膜厚增加的效果。通过该效果，能够有效地抑制在焊料接合部的膜厚不均匀的情况下在半导体元件中产生发热现象的不良现象。
其结果，本公开的半导体装置能够确保焊料接合部中的高的接合可靠性。
绝缘包覆导线具有绝缘包覆部覆盖导线部的外周的构造。因此，即使绝缘包覆导线接触到半导体元件的表面，半导体元件和导线部也不会电连接。
因此，在本公开的半导体装置中，绝缘包覆导线的存在不会影响半导体元件的动作。
另外，具有导线部以及绝缘包覆部的绝缘包覆导线是比较小规模的构成要素，所以本公开的半导体装置能够实现装置的小型化。
本公开的目的、特征、方案、以及优点通过以下的详细的说明和附图将变得更加明确。
附图说明
图1是示出实施方式1的半导体装置的制造方法的流程图。
图2是示出实施方式1的半导体装置的制造方法的说明图。
图3是示出实施方式1的半导体装置的制造方法的说明图。
图4是示出实施方式1的半导体装置的制造方法的说明图。
图5是示出实施方式1的半导体装置的制造方法的说明图。
图6是示出实施方式1的半导体装置的制造方法的说明图。
图7是示出实施方式1的半导体装置的制造方法的说明图。
图8是示出实施方式1的半导体装置的制造方法的说明图。
图9是示出实施方式1的半导体装置的制造方法的说明图。
图10是示出实施方式1的半导体装置的制造方法的说明图。
图11是示出实施方式1的半导体装置的制造方法的说明图。
图12是示出实施方式1的半导体装置的制造方法的说明图。
图13是示出实施方式1的半导体装置的制造方法的说明图。
图14是示出焊料接合部的厚度的偏差的图形。
图15是示出图12以及图13所示的绝缘包覆导线的剖面构造的剖面图。
图16是以表形式示出实施方式的效果的说明图。
图17是示出作为实施方式2的半导体装置的构造的说明图。
图18是示出作为实施方式2的半导体装置的构造的说明图。
图19是示出作为实施方式3的半导体装置的构造的说明图。
图20是示出作为实施方式3的半导体装置的构造的说明图。
图21是示出比较用半导体装置的构造的说明图。
图22是示出比较用半导体装置的构造的说明图。
(附图标记说明)
1：半导体元件；2：焊料接合部；3、11：上电极；4、12：绝缘基体；5：下电极；6：金属导线；7、17：绝缘包覆导线；8：DBC基板；13：散热板；14：一体型基板。
具体实施方式
<实施方式1>
图1是示出作为本公开的实施方式1的半导体装置51的制造方法的流程图。图2～图13是示出实施方式2的半导体装置51的制造方法的说明图。图2、图4、图6、图8、图10以及图12是剖面图，图3、图5、图7、图9、图11以及图13是俯视图。另外，在图2～图13中示出XYZ正交坐标系。以下，参照这些图说明半导体装置51的制造工序。
首先，在步骤S1中，如图2以及图3所示，准备DBC(Direct Bonded Copper)基板8。此外，图3的A-A剖面为图2。
成为半导体元件1用的基板的DBC基板8包括上电极3、绝缘基体4以及下电极5作为主要构成要素。在绝缘基体4的上表面上设置上电极3，在绝缘基体4的下表面上设置下电极5。
绝缘基体4以氮化硅(Si3N4)为构成材料，具有0.32mm的膜厚。上电极3以铜(Cu)为构成材料，具有0.4mm的膜厚。
下电极5具有使3层(Cu/Si3N4/Cu)贴合而成的构造，具有0.4mm的膜厚。作为使构成下电极5的3层贴合的方法，考虑利用表面粗化技术的基于锚定效果的直接接合、或者基于硬钎料的接合。作为硬钎料，例如考虑Ag钎料、Cu钎料、Al钎料、Zn钎料。
作为DBC基板8的上电极3，形成有包括主要区域3m以及连接区域3a～3c的图案。作为上述图案的形成方法，考虑在最初对上电极3实施期望的构图后使用夹具等贴合到绝缘基体4的第1方法、或者在使上电极3的构成材料贴合到绝缘基体4后通过蚀刻对上电极3进行构图的第2方法。
构图后的上电极3具有主要区域3m以及连接区域3a～3c。主要区域3m成为隔着后述焊料接合部2与半导体元件1接合的焊料接合区域。
在连接区域3a～3c之间，连接区域3a和连接区域3b电气独立，连接区域3a和连接区域3c电气独立。在连接区域3a～3c中，连接区域3a被分类为用于与外部端子电连接而实际使用的第1连接区域，连接区域3b以及3c被分类为用于接合后述绝缘包覆导线7、绝缘包覆导线17的第2连接区域。
因此，被分类为第2连接区域的连接区域3b以及连接区域3c未与外部端子电连接而实际使用，在后述绝缘包覆导线7、绝缘包覆导线17中不流过电流。
接下来，在步骤S2中，如图4以及图5所示，在DBC基板8上配置焊料片材20。此外，图5的B-B剖面成为图4。
焊料片材20配置于上电极3的主要区域3m上，具有膜厚为100μm、以XY平面俯视时的尺寸比10mm×10mm稍大的形状的尺寸大小。该焊料片材20为将来成为焊料接合部2的焊料部件。
在本实施方式中，作为焊料片材20的成分，采用作为通用的无铅焊料的Sn-3Ag-0.5Cu。在“Sn-3Ag-0.5Cu”中，Sn、Ag、Cu的重量％成为Sn：96.5％、Ag：3.0％、Cu：0.5％。
在此，焊料的方式也可以是焊料膏而并非片材。即，也可以代替焊料片材20而将焊料膏配置到DBC基板8的上电极3上。在焊料膏的情况下，考虑使用金属掩模印刷技术或者平面分配供给(flat dispensing supply)方式来形成。
作为焊料片材20、包含焊料膏的焊料部件的成分，也可以采用以Sn为主成分并任意地添加其他金属(Ag、Cu、Sb、Ni、Fe、Al、Ti、Zn等)。进而，虽然接合温度变高，但也可以以Zn为焊料部件的主成分，并且如果面向RoHs(Restriction on Hazardous Substances)限制对象外的产品，则也可以使焊料部件的主成分成为Pb。
之后，在步骤S3中，如图6以及图7所示，在焊料片材20上配置半导体元件1。此外，图7的C-C剖面为图6。
半导体元件1的膜厚为0.3mm、且以XY平面俯视时的尺寸成为10mm×10mm。半导体元件1的构成材料是SiC。
此外，半导体元件1的背面成为与焊料片材20的接合面，在半导体元件1的背面形成有未图示的背面金属膜。该背面金属膜朝向-Z方向，按照Ti50nm/Ni700nm/Au200nm的顺序形成。
另外，半导体元件1的表面成为与后述多个金属导线6的接合面。在半导体元件1的表面形成有未图示的表面金属膜。作为表面金属膜，形成有Al5μm。此外，在背面金属膜、表面金属膜中，Xddnm意味着构成材料为X、膜厚为dd(nm)。
在此，在将半导体元件1配置到焊料片材20上时，如果使用通用的芯片安装器，则能够在焊料片材20上高精度地安装半导体元件1。另外，为了抑制安装半导体元件1时的位置偏移，也可以用加热到比作为焊料熔点的220℃低的温度、例如175℃的芯片安装器押住半导体元件1，在焊料片材20上配置半导体元件1并临时固定。
接下来，在步骤S4中，如图8以及图9所示，隔着焊料接合部2接合半导体元件1和DBC基板8。此外，图9的D-D剖面为图8。
即，在步骤S4中，对焊料片材20进行加热而熔融。步骤S4执行后的熔融的焊料片材20成为焊料接合部2，隔着该焊料接合部2接合DBC基板8的表面和半导体元件1的背面。
在步骤S4中执行的焊料接合处理中，作为具有金属氧化膜的还原去除能力的有机酸，在一般的蚁酸气氛下，在180℃下进行10分钟热处理后，在260℃下进行5分钟热处理。此外，在不是焊料片材20而是焊料膏的情况下，由于已经包含作为还原去除剂的焊剂，所以不需要蚁酸，也可以在N2气氛下进行。
如果焊剂不是无残渣类型，则附着到焊料接合部2的周围的有机残渣能够通过湿式洗净容易地去除。如果是无残渣类型，则不需要洗净。
图14是示出在步骤S4执行后得到的焊料接合部2的厚度的偏差的图形。在图14中，将图9所示的沿着X方向的点D1～D2之间的焊料接合部2的Z方向上的膜厚变位表示为膜厚差Δt。
图14所示的膜厚差Δt表示从半导体元件1的中央用激光变位计测定并将半导体元件1的厚度设为恒定而计算出的焊料接合部2的膜厚的偏差。在将点D1处的膜厚设为T1，将点D2处的膜厚设为T2时，膜厚差Δt用以下的式(1)表示。
Δt＝|T1-T2|(μm)…(1)
在式(1)中，|Y|意味着Y的绝对值。
接下来，在步骤S5中，如图10以及图11所示，形成多个金属导线6。此外，图11的E-E剖面为图10。在附图上，多个金属导线6为了易于图示记载而用虚线表示，但当然是连续地形成的。
多个金属导线6分别为线径Φ是150μm且作为构成材料使用Al。在执行步骤S5时，多个金属导线6各自的一端与半导体元件1的表面接合，多个金属导线6各自的另一端与DBC基板8的上电极3中的连接区域3a接合。
也可以使金属导线6的构成材料成为Al以外。例如，作为金属导线6的构成材料，考虑以Al为主成分的Al合金、Cu以及以Cu为主成分的Cu合金、将Cu以及Al包上的Cu/Al包层导线等。
使用施加超声波以及负荷的超声波接合方法，接合半导体元件1的表面和金属导线6的一端、以及DBC基板8的上电极3和金属导线6的另一端。但是，只要确保半导体元件1和上电极3的电连接关系，不会破坏半导体元件1的表面金属膜、DBC基板8的上电极3等部件，则作为金属导线6的接合方法，能够采用超声波接合方法以外的任意的接合方法。
金属导线6的线径也是设计事项，可任意调整。在实施方式2中，针对10mm×10mm的芯片尺寸的半导体元件1，沿着成为第2方向的Y方向以2.5mm间隔设置多个金属导线6。多个金属导线6分别以X方向为延伸方向。即，多个金属导线6的配置方向为成为第1方向的X方向。
之后，在步骤S6中，如图12以及图13所示，与多个金属导线6独立地形成多个绝缘包覆导线7。此外，图13的F-F剖面为图12。多个绝缘包覆导线7分别包含构成材料，呈现同一构造。
图15是示出绝缘包覆导线7的剖面构造的一个例子的剖面图。如该图所示，绝缘包覆导线7包括导线部71和覆盖导线部71的外周地设置的绝缘包覆部72作为主要构成要素。
绝缘包覆导线7中的导线部71将Cu用作构成材料，将线径设为150μm。
导线部71的构成材料除了Cu以外也可以是Al、Fe、Ti、Ni以及Cr中的任意材料。导线部71被要求抑制在焊料接合部2纵向破裂时产生的接合厚度增加的功能。
因此，导线部71需要满足如下屈服应力必要条件：在25℃～150℃的温度域中，通过在国际标准ISO6892-1中规定的拉伸试验法计算的屈服应力比焊料接合部2的构成材料高。即，如果以25℃～150℃的温度域规定的半导体元件1的动作环境下，多个绝缘包覆导线7各自的导线部71满足上述屈服应力必要条件，则能够抑制焊料接合部2的焊料厚度增加。
另一方面，在绝缘包覆部72中，作为构成材料，使用具有高的耐热性的F类的树脂绝缘膜，膜厚被设定为10μm。关于成为绝缘包覆部72的构成材料的树脂绝缘膜，绝缘膜的耐热类型可以是在国际标准IEC60085中规定的F、H、N、R类中的任意类。
此外，在国际标准IEC60085的规定中，F类的容许最高温度为155℃，H类的容许最高温度为180℃，N类的容许最高温度为200℃，R类的容许最高温度为220℃。
在执行步骤S6时，多个绝缘包覆导线7分别使中央区域的绝缘包覆部72与半导体元件1的表面接触且跨越半导体元件1而将一端以及另一端接合到DBC基板8的上电极3中的连接区域3b。具体而言，在-X侧以及+X侧分离地存在的2个连接区域3b、3b中，将多个绝缘包覆导线7的一端接合到-X侧的连接区域3b，将另一端接合到+X侧的连接区域3b。
此时，多个绝缘包覆导线7分别以无松弛的状态设置，所以具有向焊料接合部2的方向按压半导体元件1的按压力。
进而，多个绝缘包覆导线7分别沿着成为第1方向的X方向设置，多个绝缘包覆导线7被设置成在俯视时不与多个金属导线6重复。具体而言，1个绝缘包覆导线7配置于在Y方向上配置的2个金属导线6、6之间。这样，多个绝缘包覆导线7与多个金属导线6独立地设置，多个绝缘包覆导线7和多个金属导线6未电连接。
关于跨越半导体元件1的绝缘包覆导线7的一端以及另一端向DBC基板8的固定，通过超声波接合方法中的超声波能量将表面的绝缘包覆部72排斥到外部，通过金属扩散接合将导线部71和连接区域3b接合来进行。
在执行步骤S6后，实施方式1的半导体装置51完成。
图16是以表形式示出实施方式的效果的说明图。图21以及图22是示出成为比较技术的比较用半导体装置60的构造的说明图。图21是剖面图，图22是俯视图。图22的I-I剖面为图21。在图21以及图22中示出XYZ正交坐标系。
如图21以及图22所示，比较用半导体装置60不具有绝缘包覆导线7而具有绝缘膜9以及铜块10这点与实施方式1的半导体装置51不同。
绝缘膜9以不与多个金属导线6接触的方式设置于半导体元件1的表面上，在绝缘膜9上设置铜块10。铜块10将焊料接合部2采用为押入部件。
在图16中，用“良”、“不良”表示针对分别具有图14所示的膜厚差Δt不同的多个种类的焊料接合部2的半导体装置实施了功率循环试验的情况的实验结果。
在图16中，表示焊料接合部2的膜厚差Δt分别为5、8、15、33、52、78、90(μm)的情况的实验结果。
针对比较用半导体装置60、实施方式1的半导体装置51、以及后述实施方式2的半导体装置52的各装置，以将半导体元件1设为通电ON状态时的焊料接合部2的接合部温度成为150℃，以将半导体元件1设为通电OFF状态时的焊料接合部2的接合部温度成为80℃的方式，进行了功率循环试验。即，以成为ΔT＝70℃(150℃-80℃)的方式，调整各电压、电流，以恒定接通电力对半导体装置51等进行了5万次循环试验。
在图16中，在5万次循环试验后，动作温度低于设定得比150℃高5℃的155℃的情况下，判定为“良”，在高于155℃的情况下，判定为“不良”。
如图16所示，在作为押入部件使用铜块10的比较用半导体装置60中，在产生比Δt＝5μm大的厚度的偏差时，初始连接性不稳定，所以发热变大而判定为“不良”。作为原因，认为如果是如铜块10的固体，则无法追随焊料接合部2的厚度偏差，利用铜块10的押入效果小，成为部分接触状态。
另一方面，在实施方式1所示的半导体装置51中，在焊料接合部2的各部位，基于多个绝缘包覆导线7的按压力发挥作用，所以在焊料接合部2中的所有厚度偏差范围中得到良好的结果。
此外，绝缘包覆导线7的导线部71的剖面形状也可以是矩形形状，而不是如图15所示的圆状。即，作为绝缘包覆导线7采用扁线，也能够发挥与剖面形状为圆状的情况同样的按压力。
(效果)
通过执行图1的步骤S1～S6，制造实施方式1的半导体装置51。半导体装置51中的多个绝缘包覆导线7分别具有向焊料接合部2部的方向按压半导体元件1的按压力。
因此，实施方式1的半导体装置51起到能够抑制由于焊料接合部2的纵向破裂产生的膜厚增加的效果。通过该效果，在焊料接合部2的膜厚不均匀的情况下，能够有效地抑制在半导体元件1中产生发热现象的不良情况。
其结果，实施方式1的半导体装置51能够确保焊料接合部2中的高的接合可靠性。
多个绝缘包覆导线7分别具有绝缘包覆部72覆盖导线部71的外周的构造。因此，即使多个绝缘包覆导线7接触到半导体元件1的表面，半导体元件1和导线部71也不会电连接。
因此，在实施方式1的半导体装置51中，多个绝缘包覆导线7的存在不影响半导体元件1的动作。
另外，分别具有导线部71以及绝缘包覆部72的多个绝缘包覆导线7成为比较小规模的构成要素，所以半导体装置51能够实现装置的小型化。
在实施方式1的半导体装置51中，多个绝缘包覆导线7在俯视时不与多个金属导线6重复，因此半导体装置51不会造成由于多个绝缘包覆导线7和多个金属导线6接触引起的恶劣影响，而能够使多个绝缘包覆导线7分别发挥上述按压力。
在DBC基板8的上电极3中，作为第1连接区域的连接区域3a和作为第2连接区域的连接区域3b相互电气独立。因此，在半导体装置51中，即使多个金属导线6各自的一端以及多个绝缘包覆导线7各自的一端和另一端共同地与上电极3连接，多个绝缘包覆导线7的存在也不会对半导体元件1的动作造成障碍。
各绝缘包覆导线7的导线部71在以25℃～150℃的温度域规定的半导体元件1的动作环境下，满足屈服应力比焊料接合部2高这样的屈服应力必要条件。
因此，实施方式1的半导体装置51在使半导体元件1在25℃～150℃的温度域中动作时，能够通过多个绝缘包覆导线7各自的按压力无障碍地抑制焊料接合部2的膜厚增加。
此外，在半导体元件1是SiC器件的情况下，在以超过150℃的温度域规定的半导体元件1的动作环境下，需要满足上述屈服应力必要条件。
导线部71的构成材料包含Al(铝)、Cu(铜)、Fe(铁)、Ti(钛)、Ni(镍)以及Cr(铬)中的至少一个，所以能够满足上述屈服应力必要条件。
各绝缘包覆导线7中的绝缘包覆部72是上述的耐热类型，所以即使使半导体元件1在上述温度域中动作，也不会使绝缘包覆部72被剥离，而能够通过多个绝缘包覆导线7各自的按压力无障碍地抑制焊料接合部2的膜厚增加。
<实施方式2>
图17以及图18是示出作为本公开的实施方式2的半导体装置52的构造的说明图。图17是示出半导体装置52的剖面构造的剖面图，图18是示出半导体装置52的平面构造的俯视图。此外，图18的G-G剖面为图17。另外，在图17以及图18中示出XYZ正交坐标系。
以下，关于实施方式2的半导体装置52的构造，对与实施方式1的半导体装置51同样的部位附加同一符号而适宜省略说明，以实施方式2的特征部分为中心进行说明。
多个绝缘包覆导线17分别包含构成材料，呈现同一构造，绝缘包覆导线17的剖面构造如图15所示，与绝缘包覆导线7同样地，包括导线部71以及绝缘包覆部72作为主要构成要素。另外，绝缘包覆导线17的导线部71以及绝缘包覆部72各自的构成材料也与绝缘包覆导线7相同。
如图17以及图18所示，多个绝缘包覆导线17分别使中央区域的绝缘包覆部72与半导体元件1的表面接触且跨越半导体元件1而将一端以及另一端接合到DBC基板8的上电极3中的连接区域3c。具体而言，在+Y侧以及-Y侧分离地存在的2个连接区域3c、3c中，将多个绝缘包覆导线17的一端接合到+Y侧的连接区域3c，将另一端接合到-Y侧的连接区域3c。
另外，多个绝缘包覆导线17分别以无松弛的状态设置，所以与多个绝缘包覆导线7同样地，具有向焊料接合部2的方向按压半导体元件1的按压力。
进而，多个绝缘包覆导线17分别沿着与X方向以直角交叉的Y方向设置。在此，X方向成为第1方向，Y方向成为第2方向。
但是，多个绝缘包覆导线17被设置成与多个金属导线6不具有接触关系。具体而言，如图17所示，多个金属导线6的分别与多个绝缘包覆导线17中的任意导线交叉的部位被配置成处于与对应的绝缘包覆导线17隔开空间的上方。这样，多个绝缘包覆导线17与多个金属导线6独立地设置，多个绝缘包覆导线17和多个金属导线6未电连接。
关于跨越半导体元件1将绝缘包覆导线17的一端以及另一端向DBC基板8进行固定，例如，通过超声波接合方法中的超声波能量将表面的绝缘包覆部72排斥到外部，通过金属扩散接合将导线部71和连接区域3c接合来进行。
此外，关于实施方式2的半导体装置52的制造方法，与实施方式1的半导体装置51同样地进行到步骤S1～S5。
然后，作为步骤S6，通过执行代替多个绝缘包覆导线7而形成多个绝缘包覆导线17的工序，实施方式2的半导体装置52完成。
在实施方式2所示的半导体装置52中，在焊料接合部2的各部位，基于多个绝缘包覆导线17的按压力发挥作用，所以如图16所示，与实施方式1的半导体装置51同样地，在焊料接合部2中的所有厚度偏差的范围中得到良好的结果。
此外，绝缘包覆导线17的导线部71的剖面形状也可以是矩形形状，而不是如图15所示的圆状。即，即使作为绝缘包覆导线17采用扁线，也能够发挥与剖面形状为圆状的情况同样的按压力。
(效果)
经由图1的步骤S1～S5以及多个绝缘包覆导线17的形成工序，制造实施方式2的半导体装置52。半导体装置52中的多个绝缘包覆导线17分别具有向焊料接合部2部的方向按压半导体元件1的按压力。
因此，实施方式2的半导体装置52与实施方式1同样地，起到能够抑制由于焊料接合部2的纵向破裂产生的膜厚增加的效果。
其结果，实施方式2的半导体装置52能够确保焊料接合部2中的高的接合可靠性。
多个绝缘包覆导线17分别具有绝缘包覆部72覆盖导线部71的外周的构造。因此，即使多个绝缘包覆导线17接触到半导体元件1的表面，半导体元件1和导线部71也不会电连接。
因此，在实施方式2的半导体装置52中，多个绝缘包覆导线17的存在不影响半导体元件1的动作。
另外，分别具有导线部71以及绝缘包覆部72的多个绝缘包覆导线17成为比较小规模的构成要素，所以半导体装置52能够实现装置的小型化。
在半导体装置52中，多个绝缘包覆导线17与多个金属导线6不具有接触关系，所以不会造成由于多个绝缘包覆导线17和多个金属导线6接触引起的恶劣影响，而能够使多个绝缘包覆导线17分别发挥上述按压力。
在DBC基板8的上电极3中，作为第1连接区域的连接区域3a和作为第2连接区域的连接区域3c相互电气独立。因此，在半导体装置52中，即使多个金属导线6各自的一端以及多个绝缘包覆导线17各自的一端和另一端共同地与上电极3连接，多个绝缘包覆导线17的存在也不会对半导体元件1的动作造成障碍。
进而，绝缘包覆导线17与绝缘包覆导线7同样地由导线部71以及绝缘包覆部72构成。
因此，实施方式2的半导体装置52与实施方式1的半导体装置51同样地，能够发挥与导线部71以及绝缘包覆部72有关的效果。
<实施方式3>
图19以及图20是示出作为本公开的实施方式3的半导体装置53的构造的说明图。图19是示出半导体装置53的剖面构造的剖面图，图20是示出半导体装置53的平面构造的俯视图。此外，图20的H-H剖面为图19。另外，在图19以及图20中示出XYZ正交坐标系。
以下，关于半导体装置53的构造，对与半导体装置51同样的部位附加同一符号而适宜省略说明，以实施方式3的特征部分为中心进行说明。
实施方式3的半导体装置53的特征点在于，将实施方式1的半导体装置51中的DBC基板8置换为一体型基板14。
成为半导体元件1用的基板的一体型基板14包括上电极11、绝缘基体12以及散热板13作为主要构成要素。在绝缘基体12的上表面上设置上电极11，在绝缘基体12的下表面上设置散热板13。
上电极11的构成材料以及构造与DBC基板8的上电极3相同。绝缘基体12的构成材料以及构造与DBC基板8的绝缘基体4相同。
散热板13与DBC基板8的下电极5同样地在广义上作为“下电极”具有导电性。
但是，散热板13在具有比绝缘基体12的下表面宽的上表面、并且具有比绝缘基体12厚的膜厚这一点上，与DBC基板8的下电极5不同。
在一体型基板14的上电极11中，与DBC基板8的上电极3同样地形成有图案。
被构图的上电极11具有主要区域11m以及连接区域11a～11c。在上电极11和上电极3的关系中，主要区域11m与主要区域3m对应，连接区域11a～11c与连接区域3a～3c对应。
主要区域11m是隔着焊料接合部2与半导体元件1接合的区域。在连接区域11a～11c之间，连接区域11a和连接区域11b电气独立，连接区域11a和连接区域11c电气独立。连接区域11a被分类为用于与外部端子电连接而实际使用的第1连接区域，连接区域11b以及连接区域11c被分类为用于接合绝缘包覆导线7、绝缘包覆导线17的第2连接区域。
因此，被分类为第2连接区域的连接区域11b以及连接区域11c不会与外部端子电连接而实际使用，在绝缘包覆导线7、绝缘包覆导线17中不流过电流。
如图19以及图20所示，多个绝缘包覆导线7分别使中央区域的绝缘包覆部72与半导体元件1的表面接触且跨越半导体元件1而将一端以及另一端接合到一体型基板14的上电极11中的连接区域11b。具体而言，在-X侧以及+X侧分离地存在的2个连接区域11b、11b中，将多个绝缘包覆导线7的一端接合到-X侧的连接区域11b，将另一端接合到+X侧的连接区域11b。
另外，多个绝缘包覆导线7分别以无松弛的状态设置，所以具有向焊料接合部2的方向按压半导体元件1的按压力。
进而，多个绝缘包覆导线7分别沿着成为第1方向的X方向设置，多个绝缘包覆导线7被设置成在俯视时不与多个金属导线6重复。这样，多个绝缘包覆导线7与多个金属导线6独立地设置，多个绝缘包覆导线7和多个金属导线6未电连接。
关于跨越半导体元件1将绝缘包覆导线7的一端以及另一端向一体型基板14进行固定，通过超声波接合方法中的超声波能量将表面的绝缘包覆部72排斥到外部，通过金属扩散接合将导线部71和连接区域11b接合来进行。
此外，实施方式3的半导体装置53的制造方法除了将DBC基板8置换为一体型基板14这点以外，与实施方式1的半导体装置51同样地进行。
因此，在经由与图1所示的步骤S1～S5同样的工序后，作为步骤S6，执行以接合到一体型基板14的形式形成多个绝缘包覆导线7的工序，由此能够制造实施方式3的半导体装置53。
此外，绝缘包覆导线7的导线部71的剖面形状也可以是矩形形状，而不是如图15所示的圆状。即，即使作为绝缘包覆导线7采用扁线，也能够发挥与剖面形状为圆状的情况同样的按压力。
(效果)
经由与实施方式1同样的步骤S1～S6，制造实施方式3的半导体装置53。半导体装置53中的多个绝缘包覆导线7分别具有向焊料接合部2部的方向按压半导体元件1的按压力。
因此，实施方式3的半导体装置53与实施方式1以及实施方式2同样地，起到能够抑制由于焊料接合部2的纵向破裂产生的膜厚增加的效果。
其结果，实施方式3的半导体装置53能够确保焊料接合部2中的高的接合可靠性。
因此，可推测在图16所示的功率循环试验中也得到与实施方式1以及实施方式2同样的结果。
进而，在实施方式5的半导体装置53中，作为一体型基板14的下电极发挥功能的散热板13具备具有比绝缘基体12的下表面宽的上表面且具有比绝缘基体12厚的膜厚的尺寸特性。
因此，关于半导体装置53，具有散热板13的一体型基板14自身能够发挥充分的散热功能。因此，无需在半导体装置53的外部设置散热部件。
另外，实施方式3的半导体装置53包括具有与实施方式1实质上相同的特征的多个绝缘包覆导线7，所以关于多个绝缘包覆导线7，起到与实施方式1同样的效果。
另外，在半导体装置53的一体型基板14的上电极11中，作为第1连接区域的连接区域11a和作为第2连接区域的连接区域11b相互电气独立。因此，在半导体装置53中，即使多个金属导线6各自的一端以及多个绝缘包覆导线7各自的一端和另一端共同地与上电极11连接，多个绝缘包覆导线7的存在也不会对半导体元件1的动作造成障碍。
此外，也可以将半导体装置53的多个绝缘包覆导线7置换为实施方式2的绝缘包覆导线17。即，也可以代替多个绝缘包覆导线7，与实施方式2同样地，在上电极11的连接区域11c、11c之间接合多个绝缘包覆导线17。
此外，本公开能够在其公开的范围内自由地组合各实施方式，或者将各实施方式适宜地变形、省略。

Claims (9)

1.一种半导体装置，具备：
基板；以及
半导体元件，在所述基板上隔着焊料接合部设置，
所述基板和所述半导体元件通过所述焊料接合部接合，
所述半导体装置还具备：
金属导线，一端与所述半导体元件连接，另一端与所述基板连接；以及
绝缘包覆导线，具有导线部和覆盖所述导线部地设置的绝缘包覆部，与所述金属导线独立地设置，跨越所述半导体元件将一端以及另一端与所述基板连接，
所述绝缘包覆导线以所述绝缘包覆部与所述半导体元件的表面接触的形式设置，具有向所述焊料接合部的方向按压所述半导体元件的按压力。
2.根据权利要求1所述的半导体装置，其中，
所述金属导线包括分别沿着第1方向设置的多个金属导线，
所述绝缘包覆导线包括分别沿着所述第1方向设置的多个绝缘包覆导线，
所述多个绝缘包覆导线在俯视时未与所述多个金属导线重复。
3.根据权利要求1所述的半导体装置，其中，
所述金属导线包括分别沿着第1方向设置的多个金属导线，
所述绝缘包覆导线包括分别沿着与所述第1方向交叉的第2方向设置的多个绝缘包覆导线，
所述多个绝缘包覆导线与所述多个金属导线无接触关系。
4.根据权利要求1至3中的任意一项所述的半导体装置，其中，
所述基板包括：
绝缘基体；以及
上电极，设置于所述绝缘基体的上表面，
所述上电极具有第1连接区域以及第2连接区域，
所述金属导线的另一端在所述上电极的所述第1连接区域被连接，
所述绝缘包覆导线的一端以及另一端在所述上电极的所述第2连接区域被连接，
所述第1连接区域和所述第2连接区域相互电气独立。
5.根据权利要求4所述的半导体装置，其中，
所述基板还包括设置于所述绝缘基体的下表面的散热板，
所述散热板具有比所述绝缘基体的下表面宽的上表面，具有比所述绝缘基体厚的膜厚。
6.根据权利要求1至5中的任意一项所述的半导体装置，其中，
所述绝缘包覆导线的所述导线部在所述半导体元件的动作环境下满足屈服应力比所述焊料接合部高这样的屈服应力必要条件。
7.根据权利要求6所述的半导体装置，其中，
所述导线部的构成材料包含Al、Cu、Fe、Ti、Ni以及Cr中的至少一个。
8.根据权利要求1至7中的任意一项所述的半导体装置，其中，
所述绝缘包覆部的耐热类型是在国际标准IEC60085中规定的F类、H类、N类以及R类中的任意类。
9.一种半导体装置的制造方法，具备：
(a)准备基板的步骤；
(b)在所述基板上配置焊料部件的步骤；
(c)在所述焊料部件上配置半导体元件的步骤；
(d)对所述焊料部件进行加热而熔融的步骤，执行所述步骤(d)后的所述焊料部件成为焊料接合部，所述基板和所述半导体元件隔着所述焊料接合部被接合；
(e)将金属导线的一端接合到所述半导体元件，将另一端接合到所述基板的步骤；以及
(f)使用具有导线部和覆盖所述导线部地设置的绝缘包覆部的绝缘包覆导线，使所述绝缘包覆部与所述半导体元件的表面接触且跨越所述半导体元件而将所述绝缘包覆导线的一端以及另一端接合到所述基板的步骤，所述绝缘包覆导线作为所述金属导线独立地形成，
执行所述步骤(f)后的所述绝缘包覆导线具有向所述焊料接合部的方向按压所述半导体元件的按压力。
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