CN115516400B - 用于噪声降低的具有输入放大器的带隙参考电路 - Google Patents

用于噪声降低的具有输入放大器的带隙参考电路

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Publication number
CN115516400B
CN115516400B CN202180032826.4A CN202180032826A CN115516400B CN 115516400 B CN115516400 B CN 115516400B CN 202180032826 A CN202180032826 A CN 202180032826A CN 115516400 B CN115516400 B CN 115516400B
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CN
China
Prior art keywords
coupled
bjt
base
collector
transistor
Prior art date
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Active
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CN202180032826.4A
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English (en)
Chinese (zh)
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CN115516400A (zh
Inventor
S·S·克里希南
T·维什瓦纳特
A·Y·贾达夫
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Texas Instruments Inc
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Texas Instruments Inc
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45564—Indexing scheme relating to differential amplifiers the IC comprising one or more extra current sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
CN202180032826.4A 2020-05-07 2021-05-07 用于噪声降低的具有输入放大器的带隙参考电路 Active CN115516400B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN20204109448 2020-05-07
IN202041019448 2020-05-07
PCT/US2021/031349 WO2021226495A1 (en) 2020-05-07 2021-05-07 Bandgap reference with input amplifier for noise reduction

Publications (2)

Publication Number Publication Date
CN115516400A CN115516400A (zh) 2022-12-23
CN115516400B true CN115516400B (zh) 2026-04-03

Family

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Family Applications (1)

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CN202180032826.4A Active CN115516400B (zh) 2020-05-07 2021-05-07 用于噪声降低的具有输入放大器的带隙参考电路

Country Status (4)

Country Link
US (2) US11914411B2 (https=)
JP (1) JP7769636B2 (https=)
CN (1) CN115516400B (https=)
WO (1) WO2021226495A1 (https=)

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US11757459B2 (en) * 2022-02-17 2023-09-12 Caelus Technologies Limited Cascode Class-A differential reference buffer using source followers for a multi-channel interleaved Analog-to-Digital Converter (ADC)
CN116337254A (zh) * 2023-01-10 2023-06-27 中云信安（深圳）科技有限公司 一种应用于安全芯片的温度检测电路
CN115877908B (zh) * 2023-03-02 2023-04-28 盈力半导体(上海)有限公司 一种带隙电压基准电路及其二阶非线性校正电路和芯片
CN116755502B (zh) * 2023-08-17 2023-10-20 深圳奥简科技有限公司 一种源极跟随器驱动电路、电子电路及电子设备
US12288587B2 (en) 2023-09-28 2025-04-29 Bae Systems Information And Electronic Systems Integration Inc. High dynamic range track and hold amplifier output stage using low voltage devices
CN117873264B (zh) * 2023-12-19 2024-11-15 深圳精控集成半导体有限公司 带隙基准电路及芯片、电子设备

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JP3643389B2 (ja) * 1994-07-27 2005-04-27 株式会社東芝 定電圧回路
JPH0993052A (ja) * 1995-09-25 1997-04-04 Sony Corp 多入力差動増幅回路
US5834926A (en) * 1997-08-11 1998-11-10 Motorola, Inc. Bandgap reference circuit
US7193454B1 (en) * 2004-07-08 2007-03-20 Analog Devices, Inc. Method and a circuit for producing a PTAT voltage, and a method and a circuit for producing a bandgap voltage reference
US20080157746A1 (en) * 2006-12-29 2008-07-03 Mediatek Inc. Bandgap Reference Circuits
US7714563B2 (en) * 2007-03-13 2010-05-11 Analog Devices, Inc. Low noise voltage reference circuit
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Also Published As

Publication number Publication date
CN115516400A (zh) 2022-12-23
WO2021226495A1 (en) 2021-11-11
US20210349490A1 (en) 2021-11-11
JP2024500588A (ja) 2024-01-10
US12189411B2 (en) 2025-01-07
US11914411B2 (en) 2024-02-27
US20240168510A1 (en) 2024-05-23
JP7769636B2 (ja) 2025-11-13

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