CN115461216A - 金属被覆液晶聚合物膜 - Google Patents
金属被覆液晶聚合物膜 Download PDFInfo
- Publication number
- CN115461216A CN115461216A CN202180028891.XA CN202180028891A CN115461216A CN 115461216 A CN115461216 A CN 115461216A CN 202180028891 A CN202180028891 A CN 202180028891A CN 115461216 A CN115461216 A CN 115461216A
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- CN
- China
- Prior art keywords
- metal layer
- metal
- polymer film
- liquid crystal
- crystal polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 190
- 239000002184 metal Substances 0.000 title claims abstract description 190
- 229920000106 Liquid crystal polymer Polymers 0.000 title claims abstract description 99
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims abstract description 91
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- 229920006254 polymer film Polymers 0.000 claims abstract description 11
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 149
- 239000010408 film Substances 0.000 description 103
- 229920001169 thermoplastic Polymers 0.000 description 56
- 239000004416 thermosoftening plastic Substances 0.000 description 55
- 238000000034 method Methods 0.000 description 29
- 230000005540 biological transmission Effects 0.000 description 18
- 238000007747 plating Methods 0.000 description 18
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- -1 aliphatic diols Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 13
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 12
- 239000011888 foil Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
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- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 description 7
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 238000001125 extrusion Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- XCZKKZXWDBOGPA-UHFFFAOYSA-N 2-phenylbenzene-1,4-diol Chemical compound OC1=CC=C(O)C(C=2C=CC=CC=2)=C1 XCZKKZXWDBOGPA-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 208000028659 discharge Diseases 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920006149 polyester-amide block copolymer Polymers 0.000 description 3
- NZGQHKSLKRFZFL-UHFFFAOYSA-N 4-(4-hydroxyphenoxy)phenol Chemical compound C1=CC(O)=CC=C1OC1=CC=C(O)C=C1 NZGQHKSLKRFZFL-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- OGSYQYXYGXIQFH-UHFFFAOYSA-N chromium molybdenum nickel Chemical compound [Cr].[Ni].[Mo] OGSYQYXYGXIQFH-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
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- C09K19/02—Liquid crystal materials characterised by optical, electrical or physical properties of the components, in general
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0137—Materials
- H05K2201/0141—Liquid crystal polymer [LCP]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
一种金属被覆液晶聚合物膜,其具备能够形成光学各向异性的熔融层的聚合物膜、层叠于上述聚合物膜的至少单面的第一金属层和层叠于上述第一金属层之上的第二金属层,在使用XPS的厚度方向上的氧浓度的分析中,上述第一金属层的平均氧浓度为2.5原子%以下。
Description
相关申请
本申请要求2020年4月17日提出的日本特愿2020-073960的优先权,通过参照引用其整体作为构成本申请一部分的内容。
技术领域
本发明涉及在包含能够形成光学各向异性的熔融层的聚合物膜(以下简记为热塑性液晶聚合物膜或液晶聚合物膜)的基材的表面形成有金属层的金属被覆液晶聚合物膜以及在层叠结构中包含该金属被覆液晶聚合物膜的覆金属层叠板。
背景技术
对于移动电话、数码相机等便携式电子设备、车载电装品、家电用电子设备等电子设备,要求小型化、轻量化。因此,谋求以树脂膜作为绝缘基材的柔性电路基板的利用和电路图案的微细化。另外,在现在正在开发的第5代移动通信系统(5G)中,为了应对10GHz以上的高频,要求减少电路基板中的传输损耗。
已知与以聚酰亚胺等作为绝缘基材的现有的电路基板相比,以液晶聚合物膜作为绝缘基材的柔性电路基板能够减少传输损耗,作为电路基板材料,开发了各种在液晶聚合物膜上层叠有金属层的覆金属层叠板。作为覆金属层叠板,开发并市售有各种将铜箔等金属箔经由胶粘层或直接压接于液晶聚合物膜的覆金属层叠板。
作为覆金属层叠板的制造方法,也研究了通过干式镀覆在树脂膜上形成金属薄膜的方法。例如专利文献1记载了一种双层柔性基板,其是在绝缘体膜的至少单面上直接形成基底金属层并在该基底金属层上形成有铜导体层的双层柔性基板,其特征在于,基底金属层主要含有固溶有3.1~3.8原子%的氧原子的镍-铬或镍-铬-钼,并记载了,作为基底金属层的制法,通过真空蒸镀法、溅射法、离子镀法等干式镀覆法形成基底层。
还研究了在通过干式镀覆在树脂膜上形成金属薄膜时使用低氧气氛的方法。专利文献2涉及具有由树脂膜/金属层构成的层结构的复合膜的制造方法,记载了如下方法:对树脂膜实施脱气工序、真空放电处理工序后,连续地实施通过溅射形成金属层的工序,在氧浓度为0.01%以下的不活泼气体气流中实施这些工序。
现有技术文献
专利文献
专利文献1:日本专利第4924843号
专利文献2:日本专利第4646580号
发明内容
发明所要解决的问题
在覆金属层叠板中,通过对表面的金属层进行蚀刻而加工出电路图案,但此时,金属箔的膜厚成为电路的微细化上的制约。作为在树脂膜上形成微细电路的方法,还研究了使用金属纳米粒子进行印刷加工的工艺(印刷电子技术),但现状是,与使用金属箔的情况相比,电阻更大、无法耐受高频下的使用。
专利文献1记载了,在利用干式镀覆的金属化方法中,将固溶在基底金属层中的氧原子控制为3.1~3.8原子%,由此能够提供铜导体层的密合性高、具有高绝缘可靠性的双层柔性电路基板。在绝缘层的选项中,还列举了液晶聚合物膜,但是,在实施例中,使用传输损耗比液晶聚合物膜大的聚酰亚胺膜,通过溅射进行基底和铜层的成膜,对于传输损耗的减少没有进行研究。
专利文献2记载了,相对于在氧的存在下进行辉光放电、溅射的现有方法,在尽可能地排除氧的真空下进行树脂膜的脱气处理、利用真空放电的表面处理、到利用溅射的金属层形成为止的全部工序,由此改善树脂膜与金属层间的剥离强度。但是,在专利文献2中没有记载抑制来源于树脂膜本身的氧与金属层的反应。另外,在实施例中,使用聚酰亚胺膜作为树脂膜,对于传输损耗的减少没有进行研究。
本发明的目的在于提供一种金属被覆液晶聚合物膜,其通过使在液晶聚合物膜的表面形成的导体层(金属层)薄层化,从而适合于微细电路加工、而且能够减少电路的传输损耗。
用于解决问题的方法
本发明的金属被覆液晶聚合物膜具备包含能够形成光学各向异性的熔融相的聚合物(热塑性液晶聚合物)的聚合物膜主体、层叠于上述聚合物膜主体的至少单面的第一金属层(第1金属层)、和层叠于上述第一金属层之上的第二金属层(第2金属层),在使用XPS的厚度方向上的氧浓度的分析中,上述第一金属层的平均氧浓度为2.5原子%以下(优选为2.0原子%以下)。
上述第一金属层的厚度方向上的氧浓度的峰值优选为4.5原子%以下(优选为4.0原子%以下)。
上述第一金属层可以包含选自由铬、锡、铁、铜、钴、锌、钼和镍组成的组中的一种或两种以上。
上述第二金属层可以是选自由铜、金、银和铝组成的组中的一种、或者含有铜、金、银、铝中的任意一种的合金。
上述聚合物膜主体可以是平面方向的线膨胀系数为0~24ppm/℃的聚合物膜主体。
本发明的覆金属层叠板在层叠结构中包含上述金属被覆液晶聚合物膜。覆金属层叠板可以具备上述金属被覆液晶聚合物膜和进一步层叠于上述第二金属层之上的第三金属层(第3金属层)。
上述金属被覆液晶聚合物膜的制造方法可以包括通过溅射在上述聚合物膜主体的至少单面(单面或双面)成膜上述第一金属层的工序。
根据本发明,可以提供能够形成减少了传输损耗、线宽得到了微细化的电路的柔性电路基板。
需要说明的是,权利要求书和/或说明书和/或附图中公开的至少两个构成的任意组合也包含在本发明中。特别是权利要求书中的各权利要求中的两个以上的任意组合也包含在本发明中。
附图说明
根据参考附图的以下的优选实施方式的说明应该会更清楚地理解本发明。但是,实施方式和附图仅是用于图示和说明,不应被用于限定本发明的范围。本发明的范围由所附的权利要求书来决定。
图1A是用于说明本发明的金属被覆液晶聚合物膜和覆金属层叠板的层叠结构的一个实施方式的示意截面图。
图1B是用于说明本发明的覆金属层叠板的层叠结构的另一实施方式的示意截面图。
图1C是用于说明本发明的覆金属层叠板的层叠结构的另一实施方式的示意截面图。
具体实施方式
本发明的金属被覆液晶聚合物膜具备层叠于包含能够形成光学各向异性的熔融层的聚合物(热塑性液晶聚合物)的膜主体(热塑性液晶聚合物膜)的至少单面的第1金属层和层叠于上述第1金属层之上的第2金属层,在使用XPS的厚度方向上的氧浓度的分析中,上述第1金属层的平均氧浓度为2.5原子%以下。上述第1金属层的厚度方向上的氧浓度的峰值优选为4.5原子%以下。这样的金属被覆液晶聚合物膜可以是通过溅射形成第一金属层、且通过干式镀覆或湿式镀覆形成第二金属层的镀金属液晶聚合物膜。例如,金属被覆液晶聚合物膜可以具备通过溅射形成在热塑性液晶聚合物膜的表面上的第1金属层(第一溅射膜)和通过溅射形成在上述第1金属层的表面上的第2金属层(第二溅射膜)。
如专利文献1例示那样以往已知有通过干式镀覆法在成为绝缘基材的树脂膜的表面形成成为基底层的金属层并在基底层上层叠有成为导体层的金属层的金属被覆树脂膜,但是,本发明人发现,通过使用热塑性液晶聚合物膜作为树脂膜并将基底层的氧浓度限制为规定值以下,能够减少在对导体层进行电路加工时的高频区域的传输损耗。另外,本发明人发现,为了抑制基底层的氧浓度,在干式镀覆时仅使用无氧气氛是不充分的,还需要抑制来源于树脂膜本身的氧的污染。在此,如果通过溅射等干式镀覆形成成为基底的第1金属层和第2金属层,则能够使形成在绝缘基材上的金属层为具有亚微米级的厚度的极薄的金属层,能够通过蚀刻等已知方法进行微细的电路加工。因此,能够同时实现柔性电路基板的电路图案的微细化和传输损耗的减少这两个课题。
(基材)
在本发明中,使用热塑性液晶聚合物膜作为绝缘基材。已知使用热塑性液晶聚合物膜作为绝缘基材的柔性电路基板与以聚酰亚胺作为绝缘基材的电路基板相比,能够减少电路加工时的传输损耗。也可以根据需要使用通过公知的方法在热塑性液晶聚合物膜的单面上形成有金属层的单面覆金属层叠板作为基材,并在另一面(膜面)形成下述第1金属层。
(液晶聚合物膜)
本发明中使用的液晶聚合物膜由能够形成光学各向异性的熔融相的聚合物形成。该聚合物只要是能够熔融成形的液晶性聚合物,则对于其化学构成没有限定,例如优选包含热塑性液晶聚合物。作为热塑性液晶聚合物,可以列举例如热塑性液晶聚酯或者在热塑性液晶聚酯中导入有酰胺键的热塑性液晶聚酯酰胺等。
另外,热塑性液晶聚合物可以是在芳香族聚酯或芳香族聚酯酰胺中进一步导入有酰亚胺键、碳酸酯键、碳二亚胺键或异氰脲酸酯键等来源于异氰酸酯的键等的聚合物。
作为本发明中使用的热塑性液晶聚合物的具体例,可以列举由以下例示的被分类为(1)至(4)的化合物及其衍生物导出的公知的热塑性液晶聚酯和热塑性液晶聚酯酰胺。但是,为了形成能够形成光学各向异性的熔融相的聚合物,各种原料化合物的组合存在适当的范围,这是不言而喻的。
(1)芳香族或脂肪族二醇(代表例参见表1)
[表1]
(2)芳香族或脂肪族二羧酸(代表例参见表2)[表2]
(3)芳香族羟基羧酸(代表例参见表3)
[表3]
(4)芳香族二胺、芳香族羟基胺或芳香族氨基羧酸(代表例参见表4)
[表4]
作为由这些原料化合物得到的热塑性液晶聚合物的代表例,可以列举具有表5和6中所示的结构单元的共聚物。
[表5]
[表6]
这些共聚物中,优选至少包含对羟基苯甲酸和/或6-羟基-2-萘甲酸作为重复单元的聚合物,特别优选(i)包含对羟基苯甲酸与6-羟基-2-萘甲酸的重复单元的共聚物;或者(ii)包含选自由对羟基苯甲酸和6-羟基-2-萘甲酸组成的组中的至少一种芳香族羟基羧酸、与至少一种芳香族二醇与至少一种芳香族二羧酸的重复单元的共聚物。
例如,在(i)的共聚物中,在热塑性液晶聚合物至少包含对羟基苯甲酸与6-羟基-2-萘甲酸的重复单元的情况下,重复单元(A)的对羟基苯甲酸与重复单元(B)的6-羟基-2-萘甲酸的摩尔比(A)/(B)优选在热塑性液晶聚合物中为(A)/(B)=约10/90~约90/10,更优选可以为(A)/(B)=约15/85~约85/15,进一步优选可以为(A)/(B)=约20/80~约80/20。
另外,在(ii)的共聚物的情况下,选自由对羟基苯甲酸和6-羟基-2-萘甲酸组成的组中的至少一种芳香族羟基羧酸(C)、与选自由4,4’-二羟基联苯、氢醌、苯基氢醌和4,4’-二羟基二苯醚组成的组中的至少一种芳香族二醇(D)、与选自由对苯二甲酸、间苯二甲酸和2,6-萘二甲酸组成的组中的至少一种芳香族二羧酸(E)在热塑性液晶聚合物中的各重复单元的摩尔比可以为芳香族羟基羧酸(C):上述芳香族二醇(D):上述芳香族二羧酸(E)=约(30~80):约(35~10):约(35~10),更优选可以为(C):(D):(E)=约(35~75):约(32.5~12.5):约(32.5~12.5),进一步优选可以为(C):(D):(E)=约(40~70):约(30~15):约(30~15)。
另外,芳香族羟基羧酸(C)中来源于6-羟基-2-萘甲酸的重复单元的摩尔比率例如可以为85摩尔%以上,优选可以为90摩尔%以上,更优选可以为95摩尔%以上。芳香族二羧酸(E)中来源于2,6-萘二甲酸的重复单元的摩尔比率例如可以为85摩尔%以上,优选可以为90摩尔%以上,更优选可以为95摩尔%以上。
另外,芳香族二醇(D)可以是来源于选自由氢醌、4,4’-二羟基联苯、苯基氢醌和4,4’-二羟基二苯醚组成的组中的相互不同的两种芳香族二醇的重复单元(D1)和(D2),这种情况下,两种芳香族二醇的摩尔比可以为(D1)/(D2)=23/77~77/23,更优选可以为25/75~75/25,进一步优选可以为30/70~70/30。
另外,来源于芳香族二醇(D)的重复结构单元与来源于芳香族二羧酸(E)的重复结构单元的摩尔比优选为(D)/(E)=95/100~100/95。如果在该范围以外,则具有聚合度不提高、机械强度降低的倾向。
需要说明的是,本发明中所述的能够形成光学各向异性的熔融相例如可以通过将试样置于热台上在氮气气氛下进行升温加热并对试样的透射光进行观察来认定。
作为热塑性液晶聚合物,优选熔点(以下称为Tm0)例如为200~360℃的范围的热塑性液晶聚合物,更优选Tm0为240~350℃的范围的热塑性液晶聚合物,进一步优选Tm0为260~330℃的热塑性液晶聚合物。需要说明的是,熔点可以使用差示扫描量热仪来观察热塑性液晶聚合物样品的热行为而得到。即,使热塑性液晶聚合物样品以10℃/分钟的速度升温而完全熔融后,将熔融物以10℃/分钟的速度冷却至50℃,再次以10℃/分钟的速度升温后,求出此时出现的吸热峰的位置作为热塑性液晶聚合物样品的熔点。
在上述热塑性液晶聚合物中,在不损害本发明效果的范围内,可以添加聚对苯二甲酸乙二醇酯、改性聚对苯二甲酸乙二醇酯、聚烯烃、聚碳酸酯、聚芳酯、聚酰胺、聚苯硫醚、聚醚醚酮、氟树脂等热塑性聚合物、各种添加剂、填充剂等。
本发明的制造方法中使用的热塑性液晶聚合物膜例如可以通过将上述热塑性液晶聚合物的熔融混炼物进行挤出成形而得到。作为挤出成形法,可以使用任意的方法,但周知的T模法、吹胀法等在工业上是有利的。特别是在吹胀法中,不仅在热塑性液晶聚合物膜的机械轴方向(以下简称为MD方向)上,而且在与其正交的方向(以下简称为TD方向)上也施加应力,能够在MD方向、TD方向上均匀地拉伸,因此可以得到控制了MD方向和TD方向上的分子取向性、介电特性等的热塑性液晶聚合物膜。
例如,在利用T模法的挤出成形中,将从T型模头挤出的熔融体片不仅在热塑性液晶聚合物膜的MD方向上进行拉伸,而且在该MD方向和TD方向这两个方向上同时进行拉伸而制膜;或者可以将从T型模头挤出的熔融体片先在MD方向上拉伸,接着在TD方向上拉伸而制膜。
另外,在利用吹胀法的挤出成形中,可以对从环形模具熔融挤出的圆筒状片以规定的拉伸比(相当于MD方向的拉伸倍率)和吹胀比(相当于TD方向的拉伸倍率)进行拉伸而制膜。
关于这样的挤出成形的拉伸倍率,作为MD方向的拉伸倍率(或拉伸比),例如可以为约1.0~约10,优选可以为约1.2~约7,进一步优选可以为约1.3~约7。另外,作为TD方向的拉伸倍率(或吹胀比),例如可以为约1.5~约20,优选可以为约2~约15,进一步优选可以为约2.5~约14。
另外,可以根据需要进行公知或惯用的热处理,调节热塑性液晶聚合物膜的熔点和/或热膨胀系数。热处理条件可以根据目的而适当设定,例如可以相对于热塑性液晶聚合物的熔点(Tm0)在(Tm0-10)℃以上(例如,约(Tm0-10)~约(Tm0+30)℃,优选为约(Tm0)~约(Tm0+20)℃)加热数小时,由此使热塑性液晶聚合物膜的熔点(Tm)上升。
热塑性液晶聚合物膜的熔点(Tm)例如可以为270~380℃,优选可以为280~370℃的范围。需要说明的是,热塑性液晶聚合物膜的熔点(Tm)可以使用差示扫描量热仪观察热塑性液晶聚合物膜样品的热行为而得到。即,可以求出将热塑性液晶聚合物膜样品以10℃/分钟的速度升温时出现的吸热峰的位置作为热塑性液晶聚合物膜的熔点(Tm)。
热塑性液晶聚合物膜可以是将膜的平面方向上的线膨胀系数调节为约0ppm/℃~约24ppm/℃的热塑性液晶聚合物膜。对于电路基板制造商而言,使用大致具有该范围内的线膨胀系数的液晶聚合物膜作为绝缘基材。线膨胀系数例如可以通过TMA法进行测定。
热塑性液晶聚合物膜的厚度可以根据用途而适当设定,例如,如果考虑用于多层电路基板的绝缘层的材料,则可以为10~500μm,优选可以为15~250μm,更优选可以为25~180μm。
(单面覆金属层叠板)
本发明的金属被覆液晶聚合物膜可以是以上述热塑性液晶聚合物膜作为基材并在其单面或双面形成有下述第1金属层和第2金属层。或者,可以以通过公知的方法在热塑性液晶聚合物膜的单面上形成有金属层的单面覆金属层叠板作为基材并在热塑性液晶聚合物露出的另一面上形成下述第1金属层和第2金属层。该作为基材的单面覆金属层叠板可以是在热塑性液晶聚合物膜的表面直接或经由胶粘层热压接金属箔而得的单面覆金属层叠板。
(第1金属层)
第1金属层可以包含选自由铬、锡、铁、铜、钴、锌、钼和镍组成的组中的一种或两种以上。例如,可以是这些金属中的两种以上的合金,还可以是添加有其它金属的合金。第1金属层可以包含不可避免的杂质,但需要将氧控制为规定的浓度以下。
第1金属层可以通过使用所层叠的金属作为靶的溅射来成膜。溅射中使用的气体优选设定为无氧的氩气。这种情况下,金属层中所含的氧被认为是来源于要溅射的液晶聚合物膜的氧。通过使用公知的溅射法,调节溅射时的输出(电流、电压)以及通电间隔(占空比:Duty ratio)等条件,能够抑制来源于液晶聚合物膜的污染,能够将第1金属层中的氧浓度抑制为规定值内。
溅射时的输出(电流、电压)没有特别限制,例如优选为10~1000kW,更优选为50~800kW,进一步优选为100~700kW。另外,通电间隔(占空比:Duty ratio)也没有特别限制,例如优选为1.1~50%,更优选为1.5~30%,进一步优选为2.0~20%。
第1金属层优选在使用XPS(X射线光电子能谱分析装置)的厚度方向上的氧浓度的分析中平均氧浓度为2.5原子%以下。由此,在以形成于第1金属层之上的第2金属层作为导体层进行电路加工的情况下,能够显著地减少高频区域的传输损耗。进而,平均氧浓度更优选为2.0原子%以下。第1金属层优选厚度方向上的氧浓度的峰值为4.5原子%以下。进而,氧浓度的峰值更优选为4.0原子%以下。
第1金属层的厚度没有特别限定,优选为5nm以上,优选为50nm以下。厚度过薄时,得不到提高第2金属层的密合性的效果,并且也难以将平均氧浓度控制得较低。另一方面,在使用导电性与第2金属层不同的金属作为第1金属层的情况下,使第1金属层过厚时,难以抑制传输损耗。第1金属层的厚度更优选为30nm以下,进一步优选为20nm以下。
(第2金属层)
第2金属层层叠于上述第1金属层之上。第2金属层可以是选自由铜、金、银和铝组成的组中的一种,也可以包含含有铜、金、银、铝中的任意一种的合金。第2金属层的制法没有特别限制,优选通过镀覆以镀层的形式形成。镀覆法可以是溅射、离子镀、真空蒸镀、CVD等干式镀覆,也可以是湿式镀覆(电解镀覆)。例如,可以与第1金属层同样地通过溅射形成第2金属层。
第2金属层的厚度没有特别限制,例如为50nm以上,优选为400nm以下,更优选为300nm以下。在通过将金属箔(例如压延铜箔)热压接于液晶聚合物膜等基材上而形成的覆金属层叠板中,金属箔的厚度成为制约,不能得到一定以下厚度的导体层,但是,在第1金属层上通过镀覆形成第2金属层的情况下,能够以任意的厚度形成导体层。在通过化学蚀刻等公知的方法进行电路加工的情况下,如果导体层薄,则也能够进行微细的电路加工。
(覆金属层叠板)
本发明的覆金属层叠板由上述金属被覆液晶聚合物膜构成或者包含上述金属被覆液晶聚合物膜。为了说明,在图1A、1B、1C中示出覆金属层叠板30的构成的一部分的示意截面图。需要说明的是,图仅是用于说明层叠结构的示意图,图的宽度、各部的厚度比不表示实际的比。在一个实施方式中,本发明的金属被覆液晶聚合物膜20通过将第2金属层2制膜至期望的厚度而能够用作电路基板材料。因此,本发明提供的覆金属层叠板30可以由热塑性液晶聚合物膜10、第一金属层1和第2金属层2构成(图1A)。
在另一实施方式中,覆金属层叠板30可以在第2金属层2上进一步层叠有第三金属层3(以下,第3金属层)(图1B)。第3金属层也可以通过干式镀覆、湿式镀覆中的任一种方法形成。例如,可以通过溅射等干式镀覆的方法层叠第1金属层1和第2金属层2后,在第2金属层2上通过电解镀覆形成第3金属层3。在此,第3金属层3可以与第2金属层2同样为选自铜、金、银、铝中的一种,也可以包含含有铜、金、银、铝中的任意一种的合金。此时,可以由与第2金属层2相同的金属形成第3金属层3。由此,能够得到使上述金属被覆液晶聚合物膜20的导体层(第2金属层)2进行了厚膜化的覆金属层叠板30。在热塑性液晶聚合物膜10的双面上形成有第1金属层和第2金属层的情况下(未图示),可以只在单面的第2金属层2上形成第3金属层3,也可以在双面的第2金属层2上分别形成第3金属层3。第3金属层的厚度没有特别限定,可以为1~20μm,更优选为1~5μm。
作为另一实施方式,在热塑性液晶聚合物膜的单面形成第1金属层1、第2金属层2以及根据需要的第3金属层3并在另一面通过金属箔4的热压接等公知的方法设置金属层的覆金属层叠板也包含在本发明的覆金属层叠板30中(图1C)。这种情况下,如上所述,可以以通过金属箔4的热压接等公知的方法制造的单面覆金属层叠板作为基材,并在另一面设置第1金属层1、第2金属层2以及根据需要的第3金属层3;或者也可以在热塑性液晶聚合物膜10的单面设置第一金属层1、第2金属层2以及根据需要的第3金属层3后,在另一面通过金属箔4的热压接等公知的方法设置金属层。
根据本发明,可以提供一种金属被覆液晶聚合物膜,其在热塑性液晶聚合物膜的单面或双面具有与使用金属箔的情况相比显著地减少了传输损耗、且比金属箔更薄的金属层。例如,在通过化学蚀刻等公知的方法形成电路的情况下,在薄的导体层中,能够进行微细的电路加工,因此,通过使用本发明的金属被覆液晶聚合物膜,能够提供减少了传输损耗(高频特性优良)、并且也抑制了尺寸的柔性电路基板。
实施例
作为液晶聚合物膜,使用株式会社可乐丽制造的“Vecstar”(注册商标)(由DSC测得的熔点310℃、厚度50μm、基于TMA法的线膨胀系数15ppm/℃)作为绝缘基材,设置于卷对卷式溅射装置中并进行真空排气,使用无氧的高纯度氩气,通过NiCr靶(Ni80重量%Cr20重量%)的溅射,在膜上形成膜厚15nm的溅射膜(第1金属层)。接着,将靶变更为Cu,在第1金属层之上形成厚度120nm的Cu膜(第2金属层)。对于如此得到的金属被覆液晶聚合物膜,通过X射线光电子能谱分析装置(XPS)(ULVAC-PHI株式会社制造/PHI5000VersaProbe2),在利用(Ar)离子从第2金属层的表面蚀刻至基材膜表面的同时,在深度方向上进行分析,求出第1金属层的平均氧浓度和氧浓度的最大值(峰值)。平均氧浓度如下定义:将镍合金存在的区域定义为镍合金层,对镍合金层内的氧存在比率进行平均化,将由此得到的值作为平均氧浓度。
只改变NiCr靶的溅射条件,以四种方式实施上述工艺,作为实施例1、实施例2、比较例1、比较例2。其中,在实施例1、2与比较例1中,以高输出间歇地进行溅射,在比较例2中以低输出恒定地进行溅射。将它们的结果示于表7中。
针对各金属被覆液晶聚合物膜,通过电解镀覆使Cu层厚膜化至12μm而制成覆金属层叠板,通过化学蚀刻加工出宽度100~120μm的微带线,使用微波网络分析仪(安捷伦株式会社制造,商品名:8722ES),使用探针(Cascade Microtech株式会社制造,商品名:ACP40-250),测定0.05~67GHz的条件下的传输损耗,比较60GHz下的损耗。此时,实施各微带线线宽下的比较,在所有情况下都示出相同的倾向,因此使用微带线线宽110μm的数值作为代表。
[表7]
在以低输出恒定地进行溅射的比较例2中,第1金属层的氧浓度在本发明的范围外。在比较例1中,由于最大输出过大,因此在溅射开始时产生来自液晶聚合物膜的污染,第1金属层的氧浓度未降低,与比较例2相比,传输损耗也没有发现明显差异。另一方面,在实施例1、2中,确认到传输损耗减少的效果。
产业上的可利用性
根据本发明的金属被覆液晶聚合物膜,能够减少柔性电路基板的传输损耗,能够使线宽微细化,作为高频电路基板材料的利用性高。
如上所述,参考附图对本发明的优选实施例进行了说明,但如果是本领域技术人员,阅览本说明书,会在显而易见的范围内容易地设想各种变更和修正。因此,这样的变更和修正被解释为由权利要求书规定的发明范围内的内容。
符号说明
1 第1金属层
2 第2金属层
3 第3金属层
4 金属箔层
10 液晶聚合物膜
20 金属被覆液晶聚合物膜
30 覆金属层叠板
Claims (7)
1.一种金属被覆液晶聚合物膜,其具备:
包含能够形成光学各向异性的熔融相的聚合物的聚合物膜主体、
层叠于所述聚合物膜主体的至少单面的第一金属层、和
层叠于所述第一金属层之上的第二金属层,
在使用XPS的厚度方向上的氧浓度的分析中,所述第一金属层的平均氧浓度为2.5原子%以下。
2.如权利要求1所述的金属被覆液晶聚合物膜,其中,所述第一金属层的厚度方向上的氧浓度的峰值为4.5原子%以下。
3.如权利要求1或2所述的金属被覆液晶聚合物膜,其中,所述第一金属层包含选自由铬、锡、铁、铜、钴、锌、钼和镍组成的组中的一种或两种以上。
4.如权利要求1~3中任一项所述的金属被覆液晶聚合物膜,其中,所述第二金属层包含选自由铜、金、银和铝组成的组中的一种、或者含有铜、金、银、铝中的任意一种的合金。
5.如权利要求1~4中任一项所述的金属被覆液晶聚合物膜,其中,所述聚合物膜主体的平面方向的线膨胀系数为0~24ppm/℃。
6.一种覆金属层叠板,其具备:
权利要求1~5中任一项所述的金属被覆液晶聚合物膜、和
层叠于所述第二金属层之上的第三金属层。
7.权利要求1~5中任一项所述的金属被覆液晶聚合物膜的制造方法,其包括:通过溅射在所述聚合物膜主体的至少单面成膜所述第一金属层的工序。
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