CN115443538A - 阵列基板和显示装置 - Google Patents
阵列基板和显示装置 Download PDFInfo
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- CN115443538A CN115443538A CN202180000690.9A CN202180000690A CN115443538A CN 115443538 A CN115443538 A CN 115443538A CN 202180000690 A CN202180000690 A CN 202180000690A CN 115443538 A CN115443538 A CN 115443538A
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 151
- 230000002093 peripheral effect Effects 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 192
- 239000007772 electrode material Substances 0.000 claims description 34
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
一种阵列基板和显示装置,阵列基板具有显示区和围绕所述显示区的周边区,阵列基板还包括依次层叠设置于衬底基板(100)上的栅极材料层(300)和源漏极材料层(400),阵列基板还包括驱动信号线,驱动信号线包括第一子信号线和第二子信号线,第一子信号线设于栅极材料层(300)且由周边区延伸至显示区,第二子信号线设于源漏极材料层(400)且至少位于显示区,第一子信号线和第二子信号线通过过孔电连接。
Description
PCT国内申请,说明书已公开。
Claims (15)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2021/085079 WO2022205364A1 (zh) | 2021-04-01 | 2021-04-01 | 阵列基板和显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115443538A true CN115443538A (zh) | 2022-12-06 |
Family
ID=83457539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202180000690.9A Pending CN115443538A (zh) | 2021-04-01 | 2021-04-01 | 阵列基板和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20240179985A1 (zh) |
CN (1) | CN115443538A (zh) |
WO (1) | WO2022205364A1 (zh) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474435A (zh) * | 2013-09-17 | 2013-12-25 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法 |
KR102089074B1 (ko) * | 2013-11-07 | 2020-03-13 | 엘지디스플레이 주식회사 | 표시패널용 어레이 기판 및 그 제조방법 |
CN109491543B (zh) * | 2018-11-06 | 2020-12-25 | 京东方科技集团股份有限公司 | 一种触控显示面板、制作方法及驱动方法 |
CN209729911U (zh) * | 2019-06-19 | 2019-12-03 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
CN110416270B (zh) * | 2019-07-30 | 2022-01-07 | 京东方科技集团股份有限公司 | Oled显示面板及其检测方法、显示装置 |
CN111682054B (zh) * | 2020-06-24 | 2023-01-10 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
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2021
- 2021-04-01 CN CN202180000690.9A patent/CN115443538A/zh active Pending
- 2021-04-01 US US17/773,595 patent/US20240179985A1/en active Pending
- 2021-04-01 WO PCT/CN2021/085079 patent/WO2022205364A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20240179985A1 (en) | 2024-05-30 |
WO2022205364A1 (zh) | 2022-10-06 |
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