CN115261792B - 一种电致变色涂层的制备方法 - Google Patents
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Abstract
本发明提供电致变色涂层的制备方法。本发明采用的涂层是以PC板材为基材,通过磁控溅射法涂覆ITO导电膜(膜厚100nm,方阻20Ω/sq),GaO3与NbOx膜层制得。本发明的涂层稳定性好,制备简单,能有效减少电变色层的漏电流,缩短相应时间。
Description
技术领域
本发明涉及一种镀在聚碳酸酯材料上的涂层,特别是涉及一种在聚碳酸酯材料上电致变色的涂层。
背景技术
目前,电致变色的产品不断的被制造研发,带来了极大的生产效益,这些产品包括:波音787飞机弦窗所使用的可调节光透过率、无窗影的电控弦窗、保时捷Nbycan GTS系列等所使用全景天窗、后视镜以及航天器热控涂层、电致变色显示器、电子标签及电子纸。其中将电致变色材料制备出的智能窗可广泛应用于大厦商场外的建筑玻璃上,及汽车玻璃挡板上减少能源的消耗。在热气候时,通过施加合适的电压用以调节智能窗的光透过率,以减少室内太阳光的强度,从而减少室内的温度,并且可减少由于强烈太阳光所造成对人体的不适。目前来讲,电致变色涂层中较为常用的为WO3薄膜,相较于其它电致变色薄膜而言,有较为优越的综合性能,但也存在循环稳定性差、着色效率较小等缺点。目前用来改进与提升WO3薄膜的性能的方法包括:(1)掺杂与退火结晶,虽然能提高薄膜的循环寿命,但却使响应时间等相关的电致变色性能变差。(2)引入纳米结构,虽使WO3薄膜变色性能提高的同时,又保证了良好的化学稳定性,但制作工艺变复杂了。目前,对于WO3,有必要增添一种更方便有效的制备方法,去进一步提升WO3薄膜的电致变色相关性能参数。这对电致变色未来的发展,以及工业化有着重要的意义。由于NbOx具有稳定性好,制备简单,能有效减少电变色层的漏电流等一系列的优点,具有十分重要的意义。
发明内容
本发明的目的在于,在聚碳酸酯基材上,镀上一系列涂层,有效减少电致变色层的漏电流。
为达到上述目的,本发明的技术方案是这样实现的:
所述涂层制备方法为:
1)在PC基材上,涂覆ITO导电膜(膜厚100nm,方阻20Ω/sq)。
2)安装好Ga靶,然后启动冷凝水装置,然后启动分子泵,当真空腔的压力在6×10- 4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量15Sccm。设置样品台的旋转速度为20r/min。在150GA功率,溅射1h。。
3)安装好Nb靶,然后启动冷凝水装置,然后启动分子泵,当真空腔的压力在6×10- 4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量20Sccm。设置样品台的旋转速度为20r/min。在150w功率,溅射1h。
本发明有益效果:
由于NbOx具有稳定性好,制备简单,能有效减少电变色层的漏电流,缩短相应时间。
具体实施方式
下面结合实施例对本发明进行详细说明:
实施例1:
1)在PC基材上,涂覆ITO导电膜(膜厚100nm,方阻20Ω/sq)。
2)安装好Ga靶,然后启动冷凝水装置,启动分子泵,当真空腔的压力在6×10-4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量15Sccm。设置样品台的旋转速度为20r/min。在150W功率,溅射1h。。
3)安装好Nb靶,然后启动冷凝水装置,启动分子泵,当真空腔的压力在6×10-4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量20Sccm。设置样品台的旋转速度为20r/min。在150W功率,溅射1h。
实施例2
将实施例1中的氧气流量更改为15Sccm。在150W功率,溅射1h。
实施例3
将实施例1中的氧气流量更改为10Sccm。在150W功率,溅射1h。
通过采用计时电流法,以及紫外分光光度计共同测量,得出薄膜在指定光波长的光透过率以及电流随时间的变化。使用电化学工作站对制备样品施加一个方波信号,此时薄膜或器件便会发生着色以及褪色的反应,测试中紫外分光光度计记录着薄膜或器件的光透过率与时间的关系,而电化学工作站则记录着电流与时间的关系,透过这些关系可得出薄膜或器件的输入输出电荷量,响应时间与着色效率等一些列电致变色薄膜或器件的重要性能指标。
表1样品的原子氧侵蚀率测试结果
样品名称 | NbOx膜 | 实施例1 | 实施例2 | 实施例3 |
显色相应时间 | 9 | 6 | 7 | 7 |
褪色相应时间 | 9 | 5 | 6 | 7 |
从表1性能测试结果可知,实施例1涂层,NbOx显色相应时间、褪色相应时间最少,并且薄膜的着色效率得到明显的提高。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进、不同用途等,均应包含在本发明的保护范围之内。
Claims (1)
1.电致变色涂层的制备方法,其特征在于:包括以下步骤:1)在PC基材上,涂覆ITO导电膜,所述导电膜的膜厚为100nm,方阻为20Ω/sq;2)安装好Ga靶,然后启动冷凝水装置,启动分子泵,当真空腔的压力在6×10-4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量15Sccm;设置样品台的旋转速度为20r/min;在150W功率,溅射1h,形成GaO3膜;3)更换成Nb靶,然后启动冷凝水装置,启动分子泵,当真空腔的压力在6×10-4Pa以下,打开氩气阀,调节氩气流量为50Sccm,氧气流量20Sccm;设置样品台的旋转速度为20r/min;在150W功率,溅射1h,形成NbOx膜。
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