CN115250640A - 压电传感器及触觉反馈装置 - Google Patents

压电传感器及触觉反馈装置 Download PDF

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Publication number
CN115250640A
CN115250640A CN202180003572.3A CN202180003572A CN115250640A CN 115250640 A CN115250640 A CN 115250640A CN 202180003572 A CN202180003572 A CN 202180003572A CN 115250640 A CN115250640 A CN 115250640A
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China
Prior art keywords
piezoelectric
insulating layer
electrode
layer
piezoelectric sensor
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Pending
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CN202180003572.3A
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English (en)
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陈右儒
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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Publication of CN115250640A publication Critical patent/CN115250640A/zh
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/016—Input arrangements with force or tactile feedback as computer generated output to the user
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • User Interface Of Digital Computer (AREA)
  • Pressure Sensors (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)

Abstract

本公开实施例提供了一种压电传感器及触觉反馈装置，该压电传感器包括：衬底基板；至少一个压电器件，位于衬底基板上；有机绝缘层，位于压电器件背离衬底基板的一侧，有机绝缘层具有第一过孔，第一过孔在衬底基板上的正投影与压电器件在衬底基板上的正投影相互交叠；无机绝缘层，位于有机绝缘层背离衬底基板的一侧，无机绝缘层与第一过孔至少部分不交叠；走线层，位于无机绝缘层背离衬底基板的一侧，走线层包括走线，走线的一端通过至少部分第一过孔与压电器件电连接。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202180003572.3A 2021-02-26 2021-11-25 压电传感器及触觉反馈装置 Pending CN115250640A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/CN2021/078073 WO2022178807A1 (zh) 2021-02-26 2021-02-26 触觉反馈基板、触觉反馈装置及触觉反馈方法
CNPCT/CN2021/078073 2021-02-26
PCT/CN2021/133249 WO2022179219A1 (zh) 2021-02-26 2021-11-25 压电传感器及触觉反馈装置

Publications (1)

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CN115250640A true CN115250640A (zh) 2022-10-28

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CN202180000340.2A Active CN115250626B (zh) 2021-02-26 2021-02-26 一种触觉反馈基板、触觉反馈装置及触觉反馈方法
CN202180003572.3A Pending CN115250640A (zh) 2021-02-26 2021-11-25 压电传感器及触觉反馈装置

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US (1) US11847263B2 (zh)
EP (1) EP4163986A4 (zh)
CN (2) CN115250626B (zh)
WO (2) WO2022178807A1 (zh)

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Publication number Priority date Publication date Assignee Title
WO2024082255A1 (zh) * 2022-10-21 2024-04-25 京东方科技集团股份有限公司 一种触觉反馈基板及触觉反馈装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3798287B2 (ja) * 2001-10-10 2006-07-19 Ｓｍｋ株式会社 タッチパネル入力装置
EP1956466B1 (fr) 2007-02-12 2013-08-07 Universite Des Sciences Et Technologies De Lille Interface tactile vibrante
JP5398315B2 (ja) 2009-03-13 2014-01-29 富士フイルム株式会社 圧電素子及びその製造方法並びにインクジェットヘッド
KR101070137B1 (ko) * 2009-08-21 2011-10-05 삼성전기주식회사 터치 피드백 패널, 이를 포함하는 터치 스크린 장치 및 전자 장치
JP2013161587A (ja) 2012-02-02 2013-08-19 Alps Electric Co Ltd メンブレンスイッチユニットおよびこのメンブレンスイッチユニットを用いたキーボード装置
JP2014197576A (ja) 2013-03-29 2014-10-16 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波トランスデューサー及び超音波デバイス
JP6233581B2 (ja) * 2013-12-26 2017-11-22 セイコーエプソン株式会社 超音波センサー及びその製造方法
US20170092838A1 (en) 2015-09-29 2017-03-30 Seiko Epson Corporation Piezoelectric driving apparatus, method of manufacturing the same, motor, robot, and pump
JP6641943B2 (ja) * 2015-12-03 2020-02-05 セイコーエプソン株式会社 モーター用圧電駆動装置およびその製造方法、モーター、ロボット、ならびにポンプ
JP6943563B2 (ja) 2016-11-30 2021-10-06 株式会社ジャパンディスプレイ 入力機能付き表示装置
US11132059B2 (en) * 2017-09-14 2021-09-28 Logitech Europe S.A. Input device with haptic interface
CN108846318B (zh) 2018-05-24 2021-08-31 业泓科技(成都)有限公司 超声波指纹识别装置及其制作方法以及应用其的电子装置
CN109240485B (zh) 2018-05-28 2020-11-13 厦门大学 一种纹理触觉再现装置、显示装置与弧度再现装置
CN111749874B (zh) 2019-03-29 2023-08-08 研能科技股份有限公司 微机电泵
CN111769080B (zh) 2020-06-24 2022-07-12 武汉华星光电半导体显示技术有限公司 显示面板

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Publication number Publication date
WO2022179219A1 (zh) 2022-09-01
EP4163986A1 (en) 2023-04-12
EP4163986A4 (en) 2024-02-21
US11847263B2 (en) 2023-12-19
US20230152892A1 (en) 2023-05-18
CN115250626A (zh) 2022-10-28
CN115250626B (zh) 2024-05-28
WO2022178807A1 (zh) 2022-09-01

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