CN115247028B - 具有增强的缺陷减少的抛光组合物和抛光衬底的方法 - Google Patents

具有增强的缺陷减少的抛光组合物和抛光衬底的方法 Download PDF

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Publication number
CN115247028B
CN115247028B CN202210436744.2A CN202210436744A CN115247028B CN 115247028 B CN115247028 B CN 115247028B CN 202210436744 A CN202210436744 A CN 202210436744A CN 115247028 B CN115247028 B CN 115247028B
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China
Prior art keywords
mechanical polishing
chemical mechanical
substrate
polishing composition
group
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CN202210436744.2A
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English (en)
Chinese (zh)
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CN115247028A (zh
Inventor
郭毅
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DuPont Electronic Materials Holding Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202210436744.2A 2021-04-27 2022-04-24 具有增强的缺陷减少的抛光组合物和抛光衬底的方法 Active CN115247028B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/241,399 US12291655B2 (en) 2021-04-27 2021-04-27 Polishing composition and method of polishing a substrate having enhanced defect reduction
US17/241399 2021-04-27

Publications (2)

Publication Number Publication Date
CN115247028A CN115247028A (zh) 2022-10-28
CN115247028B true CN115247028B (zh) 2024-10-22

Family

ID=83698910

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CN202210436744.2A Active CN115247028B (zh) 2021-04-27 2022-04-24 具有增强的缺陷减少的抛光组合物和抛光衬底的方法

Country Status (5)

Country Link
US (2) US12291655B2 (https=)
JP (1) JP2022169478A (https=)
KR (1) KR20220147526A (https=)
CN (1) CN115247028B (https=)
TW (1) TW202309211A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311874A (ja) * 1999-04-28 2000-11-07 Seimi Chem Co Ltd 有機アルカリを含有する半導体用研磨剤
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
TW200914593A (en) * 2007-08-29 2009-04-01 Nippon Chemical Ind Polishing compound for semiconductor wafer and polishing method
TW201726880A (zh) * 2015-09-15 2017-08-01 福吉米股份有限公司 研磨用組成物

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* Cited by examiner, † Cited by third party
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TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US9129907B2 (en) 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
TWI463002B (zh) * 2011-12-01 2014-12-01 Uwiz Technology Co Ltd 研漿組成物
US8545715B1 (en) * 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
JP2014154707A (ja) * 2013-02-08 2014-08-25 Hitachi Chemical Co Ltd 研磨液、研磨方法及びシリコンウエハの製造方法
US9275899B2 (en) * 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
JP6482234B2 (ja) * 2014-10-22 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
JPWO2016143323A1 (ja) * 2015-03-11 2017-12-21 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
KR20200010806A (ko) * 2018-07-23 2020-01-31 삼성전자주식회사 연마 슬러리 및 그 제조 방법과 반도체 소자의 제조 방법
US10968366B2 (en) * 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10604678B1 (en) 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
JP7414437B2 (ja) * 2019-09-13 2024-01-16 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311874A (ja) * 1999-04-28 2000-11-07 Seimi Chem Co Ltd 有機アルカリを含有する半導体用研磨剤
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
TW200914593A (en) * 2007-08-29 2009-04-01 Nippon Chemical Ind Polishing compound for semiconductor wafer and polishing method
TW201726880A (zh) * 2015-09-15 2017-08-01 福吉米股份有限公司 研磨用組成物

Also Published As

Publication number Publication date
US20220348788A1 (en) 2022-11-03
US12291655B2 (en) 2025-05-06
CN115247028A (zh) 2022-10-28
KR20220147526A (ko) 2022-11-03
US20230083732A1 (en) 2023-03-16
TW202309211A (zh) 2023-03-01
JP2022169478A (ja) 2022-11-09
US12024652B2 (en) 2024-07-02

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.