JP2022169478A - 研磨組成物及び向上した欠陥低減を有する基材を研磨する方法 - Google Patents

研磨組成物及び向上した欠陥低減を有する基材を研磨する方法 Download PDF

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Publication number
JP2022169478A
JP2022169478A JP2022072275A JP2022072275A JP2022169478A JP 2022169478 A JP2022169478 A JP 2022169478A JP 2022072275 A JP2022072275 A JP 2022072275A JP 2022072275 A JP2022072275 A JP 2022072275A JP 2022169478 A JP2022169478 A JP 2022169478A
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
group
polishing composition
quaternary ammonium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022072275A
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English (en)
Japanese (ja)
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JP2022169478A5 (https=
Inventor
イ・グオ
Yi Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2022169478A publication Critical patent/JP2022169478A/ja
Publication of JP2022169478A5 publication Critical patent/JP2022169478A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2022072275A 2021-04-27 2022-04-26 研磨組成物及び向上した欠陥低減を有する基材を研磨する方法 Pending JP2022169478A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/241,399 2021-04-27
US17/241,399 US12291655B2 (en) 2021-04-27 2021-04-27 Polishing composition and method of polishing a substrate having enhanced defect reduction

Publications (2)

Publication Number Publication Date
JP2022169478A true JP2022169478A (ja) 2022-11-09
JP2022169478A5 JP2022169478A5 (https=) 2025-04-21

Family

ID=83698910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022072275A Pending JP2022169478A (ja) 2021-04-27 2022-04-26 研磨組成物及び向上した欠陥低減を有する基材を研磨する方法

Country Status (5)

Country Link
US (2) US12291655B2 (https=)
JP (1) JP2022169478A (https=)
KR (1) KR20220147526A (https=)
CN (1) CN115247028B (https=)
TW (1) TW202309211A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Citations (3)

* Cited by examiner, † Cited by third party
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JP2014154707A (ja) * 2013-02-08 2014-08-25 Hitachi Chemical Co Ltd 研磨液、研磨方法及びシリコンウエハの製造方法
JP2016084371A (ja) * 2014-10-22 2016-05-19 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016143323A1 (ja) * 2015-03-11 2016-09-15 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法

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JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
DE10063488A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Siliciumdioxid-Filmen
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US9129907B2 (en) 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
JP5275595B2 (ja) 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
TWI463002B (zh) * 2011-12-01 2014-12-01 Uwiz Technology Co Ltd 研漿組成物
US8545715B1 (en) * 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
US9275899B2 (en) * 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
KR20200010806A (ko) * 2018-07-23 2020-01-31 삼성전자주식회사 연마 슬러리 및 그 제조 방법과 반도체 소자의 제조 방법
US10968366B2 (en) * 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10604678B1 (en) 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
JP7414437B2 (ja) * 2019-09-13 2024-01-16 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014154707A (ja) * 2013-02-08 2014-08-25 Hitachi Chemical Co Ltd 研磨液、研磨方法及びシリコンウエハの製造方法
JP2016084371A (ja) * 2014-10-22 2016-05-19 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016143323A1 (ja) * 2015-03-11 2016-09-15 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法

Also Published As

Publication number Publication date
US20220348788A1 (en) 2022-11-03
US12291655B2 (en) 2025-05-06
CN115247028B (zh) 2024-10-22
CN115247028A (zh) 2022-10-28
KR20220147526A (ko) 2022-11-03
US20230083732A1 (en) 2023-03-16
TW202309211A (zh) 2023-03-01
US12024652B2 (en) 2024-07-02

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