CN115216227A - 喷墨用粘接剂、半导体装置的制造方法及电子零件 - Google Patents
喷墨用粘接剂、半导体装置的制造方法及电子零件 Download PDFInfo
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- CN115216227A CN115216227A CN202210904401.4A CN202210904401A CN115216227A CN 115216227 A CN115216227 A CN 115216227A CN 202210904401 A CN202210904401 A CN 202210904401A CN 115216227 A CN115216227 A CN 115216227A
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Abstract
提供一种喷墨用粘接剂,其在使用喷墨装置进行涂布而被使用的粘接剂中,可以在粘接剂层中不易产生孔,另外在贴合后,可以减少暴露于高温时的脱气并提高耐湿可靠性。本发明的喷墨用粘接剂含有:其含有:具有1个(甲基)丙烯酰基的第一光固化性化合物、具有2个以上(甲基)丙烯酰基的第二光固化性化合物、光自由基引发剂、具有1个以上的环状醚基或环状硫醚基的热固化性化合物、能够与所述热固化性化合物发生反应的化合物,所述第一光固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯。
Description
本申请是中国申请号为201680003482.3、发明名称为“喷墨用粘接剂、半导体装置的制造方法及电子零件”且申请日为2016年1月20日的专利申请的分案申请。
技术领域
本发明涉及一种使用喷墨装置进行涂布而被使用的喷墨用粘接剂。另外,本发明涉及一种使用上述粘接剂的半导体装置的制造方法、以及使了用上述粘接剂的电子零件。
背景技术
在对半导体元件和基板等支承部件进行接合时主要使用糊状的粘接剂作为半导体元件固定用粘接剂。近年来,伴随半导体元件的小型化、半导体封装的小型化、高性能化,对所使用的支承部件也要求小型化。针对这样的要求,在糊状的粘接剂中,产生润湿扩大而溢出等问题。另外,在糊状的粘接剂中,厚度控制困难,其结果,半导体元件倾斜而产生接合的不良等问题。因此,在近年来的半导体封装中,使用现有的糊状的粘接剂的接合中,不能充分地应对。
另外,近年来,如下述的专利文献1中所记载,可使用具有膜状的粘接剂层的粘接片。
使用有该粘接片的接合方法中,首先,在半导体晶片的背面粘贴粘接片(粘接剂层),进一步在粘接剂层的另一个面贴合切割片。其后,通过切割,在贴合有粘接剂层的状态下将半导体晶片进行切片化而得到半导体元件。接着,拾起带粘接剂层的半导体元件,将其与支承部件进行接合。其后,经过接合、密封等组装工序,得到半导体装置。
但是,在使用有粘接片的半导体装置的制造中,存在如下问题:由于粘接片在切割时与切割刀粘合在一起,从而切断性降低,半导体芯片出现缺陷而成品率降低。另外,由于在基板等支承部件中存在配线图案等台阶,所以在台阶部分容易残留孔。孔成为使可靠性变差的原因。
另外,专利文献2中,公开有一种粘接剂,其含有放射线聚合性化合物、光引发剂和热固化性树脂。但是,这种粘接剂存在如下问题:在具有配线图案的台阶的基板中,产生孔,可靠性变低。
下述的专利文献3中公开有一种粘接剂,其含有:(1)环氧树脂、(2)自由基固化性树脂、(3)光自由基引发剂、及(4)潜在性环氧固化剂。(4)潜在性环氧固化剂是使(a)特定的式(I)表示的胺化合物、(b)分子内具有2个以上的氨基的多胺化合物、(c)有机聚异氰酸酯化合物、及(d)环氧化合物反应而得到的。但是,存在如下问题:即使使用这种粘接剂,在具有配线图案的台阶的基板中也会产生孔,可靠性变低。
另外,在现有的粘接剂中,有时贴合后的粘接性变低。另外,现有的粘接剂也存在如下问题:暴露于高温时,有时会发生脱气而污染周边部件,或者耐湿可靠性变低。
现有技术文献
专利文献
专利文献1:日本特开平3-192178号公报
专利文献2:WO2011/058998A1
专利文献3:日本特开2013-82836号公报
发明内容
发明所要解决的技术问题
本发明的目的在于,提供一种喷墨用粘接剂,其在使用喷墨装置进行涂布而被使用的粘接剂中,可以在粘接剂层中不易产生孔,另外可以在贴合后降低暴露在高温中时的脱气、且提高耐湿粘接可靠性。另外,本发明的目的还在于,提供一种使用上述粘接剂的半导体装置的制造方法、以及使用有上述粘接剂的电子零件。
用于解决技术问题的技术方案
根据本发明的宽广的方面,提供一种喷墨用粘接剂,其含有:
具有1个(甲基)丙烯酰基的第一光固化性化合物、具有2个以上(甲基)丙烯酰基的第二光固化性化合物、光自由基引发剂、具有1个以上的环状醚基或环状硫醚基的热固化性化合物、以及能够与所述热固化性化合物发生反应的化合物,所述第一光固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯。
在本发明的粘接剂的某种特定方面,所述第一光固化性化合物和所述第二光固化性化合物的合计100重量%中,所述第一光固化性化合物的含量为50重量%以上、99.9重量%以下,所述第二光固化性化合物的含量为0.1重量%以上、50重量%以下。。
在本发明的粘接剂的某种特定方面,所述具有1个以上的环状醚基或环状硫醚基的热固化性化合物含有具有1个以上的环氧基或环硫乙烷基的热固化性化合物。
在本发明的粘接剂的某种特定方面,所述具有1个以上的环状醚基或环状硫醚基的热固化性化合物含有具有1个以上的环氧基或环硫乙烷基的热固化性化合物。
在本发明的粘接剂的某种特定方面,所述粘接剂含有具有1个以上的(甲基)丙烯酰基、且具有1个以上的环状醚基或环状硫醚基的光及热固化性化合物。
在本发明的粘接剂的某种特定方面,所述具有1个以上的(甲基)丙烯酰基、且具有1个以上的环状醚基或环状硫醚基的光及热固化性化合物包含具有1个以上的(甲基)丙烯酰基、且具有1个以上的环氧基或环硫乙烷基的光及热固化性化合物。
在本发明的粘接剂的某种特定方面,所述光及热固化性化合物含有(甲基)丙烯酸4-羟基丁酯缩水甘油醚。
在本发明的粘接剂的某种特定方面,根据JIS K2283测定的所述喷墨用粘接剂在25℃及10rpm下的粘度为5mPa·s以上、1600mPa·s以下。
根据本发明的宽广的方面,提供一种半导体装置的制造方法,其包括:
在用于搭载半导体元件的支承部件或半导体元件的表面上,使用喷墨装置涂布上述喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述支承部件或所述半导体元件侧的相反一侧的表面上叠层半导体元件的工序;
在叠层了所述半导体元件后,使所述B阶化粘接剂层发生热固化的工序。
根据本发明的宽广的方面,提供一种半导体装置的制造方法,其包括:
在半导体晶片的表面上,使用喷墨装置喷出上述喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;
使所述叠层体中的所述B阶化粘接剂层发生热固化的工序;
热固化后切断所述叠层体的工序。
根据本发明的宽广的方面,提供一种电子零件,其包括:第一电子零件主体、第二电子零件主体、以及将所述第一电子零件主体和所述第二电子零件主体连接在一起的粘接剂层,所述粘接剂层为上述喷墨用粘接剂的固化物。
在本发明的电子零件的某种特定方面,所述第一电子零件主体为用于搭载半导体元件的支承部件或半导体元件,所述第二电子零件主体为半导体元件。
发明效果
本发明的喷墨用粘接剂其含有:具有1个(甲基)丙烯酰基的第一光固化性化合物、具有2个以上(甲基)丙烯酰基的第二光固化性化合物、光自由基引发剂、具有1个以上的环状醚基或环状硫醚基的热固化性化合物、能够与所述热固化性化合物发生反应的化合物,所述第一光固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯,因此,在使用喷墨装置涂布本发明的喷墨用粘接剂、且使其固化时,可以在粘接剂层中不易产生孔。另外,在贴合后,可以降低暴露于高温时的脱气,并且提高耐湿可靠性。
附图说明
图1是示意性地表示使用本发明一实施方式的喷墨用粘接剂得到的电子零件的正面剖面图;
图2(a)~(e)是用于说明图1所示的电子零件的制造方法的各工序的剖面图;
图3是表示在图2所示的电子零件的制造方法中所使用的喷墨装置的一例的概略构成图;
图4是表示在图2所示的电子零件的制造方法中所使用的喷墨装置的其它例的概略构成图;
图5是示意性地表示图1所示的电子零件的变形例的正面剖面图;
图6是示意性地表示使用本发明一个实施方式的喷墨用粘接剂得到的电子零件的第一变形例的正面剖面图;
图7是示意性地表示使用本发明一个实施方式的喷墨用粘接剂得到的电子零件的第二变形例的正面剖面图。
标记说明
1…电子零件
1A…一次叠层体
2…第一电子零件主体
3…粘接剂层(加热后)
4…第二电子零件主体
11、11X…喷墨装置
12…粘接剂层
12A…利用第一光照射部照射了光的粘接剂层
12B…利用第二光照射部照射了光的粘接剂层
13…第一光照射部
14…第二光照射部
21…油墨罐
22…喷出部
23、23X…循环流路部
23A…缓冲罐
23B…泵
31…电子零件
32…多层的粘接剂层(加热后)
32A、32B、32C…粘接剂层(加热后)
51、71…半导体装置
52…叠层结构体
53、53A…基板
53a…第一连接端子
53b…第二连接端子
54、61、72…粘接剂层
55…第二半导体晶片
55a、73a…连接端子
56、63、74…配线
62、73…第一半导体晶片
62a…连接端子
具体实施方式
以下,详细地说明本发明。
本发明的喷墨用粘接剂(以下,有时简称为粘接剂)使用喷墨装置进行涂布而被使用。本发明的粘接剂与通过丝网印刷而被涂布的粘接剂、及利用点胶机涂布的粘接剂等不同。
本发明的粘接剂通过照射光及加热进行固化而被使用。本发明的粘接剂优选在通过照射光进行固化之后通过加热进行固化而被使用。本发明的粘接剂为光及热固化性粘接剂,具有光固化性和热固化性。本发明的粘接剂与仅进行光固化的粘接剂、及仅进行热固化的粘接剂等不同。
本发明的粘接剂含有光固化性化合物(可通过照射光而固化的固化性化合物)和热固化性化合物(可通过加热而固化的固化性化合物)。本发明的粘接剂含有具有1个(甲基)丙烯酰基的第一光固化性化合物和具有2个以上的(甲基)丙烯酰基的第二光固化性化合物作为光固化性化合物。另外,在本发明中,上述第一固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯。本发明涉及的粘接剂含有具有1个以上的环状醚基或环状硫醚基的热固化性化合物作为热固化性化合物。另外,本发明的粘接剂含有光自由基引发剂和可以与热固化性化合物发生反应的化合物。
本发明的粘接剂中,由于具备上述的构成,所以在使用喷墨装置涂布本发明的喷墨用粘接剂、且使其固化时,可以使得粘接剂层不易产生孔。特别是在使用喷墨装置涂布本发明的喷墨用粘接剂、且通过照射光进行固化之后通过加热进行固化时,可以更加有效地使得粘接剂层中不易产生孔。另外,本发明的粘接剂中,在贴合后,可以降低暴露在高温时的脱气、提高耐湿可靠性。在使用本发明的粘接剂进行粘接之后,即使粘接物暴露于高温下或高湿下等严酷的条件,也不易降低粘接性。另外,本发明的粘接剂中,也可以提高粘接剂层的厚度精度。
在本发明中,特别是通过与第二光固化性化合物、光自由基引发剂、具有1个以上的环状醚基或环状硫醚基的热固化性化合物、以及能够与上述热固化性化合物反应的化合物一起组合使用(甲基)丙烯酸碳原子数8~21的烷基酯,可充分地发挥上述的效果。
对本发明的粘接剂照射累积光量为1000mJ/cm2的光并使得365nm下的照度为100mW/cm2而得到B阶化粘接剂时,B阶化粘接剂在25℃下的弹性模量优选为5.0×102Pa以上,更优选为8.0×102Pa以上,优选为8.0×104Pa以下,更优选为5.0×104Pa以下。上述弹性模量为上述下限以上时,不易引起半导体芯片等移动。上述弹性模量为上述上限以下时,半导体芯片等贴合后的粘接力更进一步升高,可抑制孔的产生。需要说明的是,照度为利用牛尾电机社制造的“UIT-201”所测定的值。
上述弹性模量使用TA仪器社制造的粘弹性测定装置ARES、在25℃、测定板:直径8mm的平行板及频率1Hz下进行测定。需要说明的是,本说明书中,上述弹性模量是指储能弹性模量(G’)。
本发明的粘接剂由于使用喷墨装置进行涂布,因此,一般而言在25℃下为液态。上述粘接剂在25℃下的粘度优选为3mPa·s以上,更优选为5mPa·s以上,更进一步优选为10mPa·s以上,进一步优选为160mPa·s以上,优选为2000mPa·s以下,更优选为1600mPa·s以下,进一步优选为1500mPa·s以下。从更进一步提高粘接剂层的厚度精度、另外使得粘接剂层更加不易产生孔的观点出发,上述粘接剂在25℃下的粘度为160mPa·s以上,特别优选为1600mPa·s以下。
上述粘度以JIS K2283为基准,使用E型粘度计(东机产业社制造的“TVE22L”),在25℃及10rpm的条件下进行测定。
上述粘接剂优选用于电子零件的粘接。上述粘接剂优选不是抗蚀剂组合物,优选不是用于形成抗蚀剂膜的组合物。
本发明的半导体装置的制造方法包括:在用于搭载半导体元件的支承部件或半导体元件的表面上,使用喷墨装置涂布上述喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述支承部件或所述半导体元件侧的相反一侧的表面上叠层半导体元件的工序;
在叠层了所述半导体元件后,使所述B阶化粘接剂层发生热固化的工序。
另外,本发明的半导体装置的制造方法包括:在半导体晶片的表面上,使用喷墨装置喷出上述喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;
使所述叠层体中的所述B阶化粘接剂层发生热固化的工序;
热固化后裁断所述叠层体的工序。
如果使用本发明的粘接剂,则可以提高粘接剂层的厚度精度,另外不易在粘接剂层中产生孔。因此,本发明的粘接剂可以适用于本发明的半导体装置的制造方法。
在利用上述喷墨装置进行喷出时,优选在将上述粘接剂加热至40℃以上、100℃以下的状态下喷出上述粘接剂。从更进一步高精度地形成粘接剂层、更进一步不易在粘接剂层中产生孔的观点出发,优选一边使上述喷墨用粘接剂循环,一边进行涂布。
上述喷墨装置优选具有:贮存上述粘接剂的油墨罐、与上述油墨罐连接且喷出上述粘接剂的喷出部、以及一端与上述喷出部连接并且另一端与上述油墨罐连接且在内部流动上述粘接剂的循环流路部。
在涂布上述粘接剂时,在上述喷墨装置内使上述粘接剂从上述油墨罐移动到上述喷出部之后,使未从上述喷出部喷出的上述粘接剂在上述循环流路部内流动并移动到上述油墨罐,由此,一边使上述粘接剂进行循环,一边进行涂布。如果一边使上述粘接剂循环,一边进行涂布,则更进一步有效地得到本发明的效果。即,可以更进一步提高粘接剂层的厚度精度,另外在粘接剂层中更加不易产生孔。
另外,在本发明中,可以高精度地形成厚度厚的粘接剂层。另外,在本发明中,即使为经多层化的粘接剂层,也能够微细且高精度地形成。
以下,一边参照附图、一边说明本发明的具体的实施方式及实施例,由此明确本发明。
图1是示意性地表示使用本发明一个实施方式的喷墨用粘接剂得到的电子零件的正面剖面图。
图1所示的电子零件1包括:第一电子零件主体2、配置于第一电子零件主体2表面上的粘接剂层3、配置于粘接剂层3表面上的第二电子零件主体4。第二电子零件主体4配置于粘接剂层3的与第一电子零件主体2侧相反侧。在粘接剂层3的第一表面上配置有第一电子零件主体2。在粘接剂层3的与第一表面相反侧的第二表面上配置有第二电子零件主体4。粘接剂层3为光及热固化后的粘接剂层,为固化了的粘接剂层。为了形成粘接剂层3,可使用本发明一个实施方式的喷墨用粘接剂。该喷墨用粘接剂使用喷墨装置进行涂布,且通过照射光进行固化之后通过加热进行固化,形成粘接剂层3。
作为上述电子零件主体,具体而言,可举出:电路基板、半导体晶片、切割后的半导体晶片(经分割的半导体晶片、半导体元件)、保护玻璃、电容器、二极管、印刷基板、挠性印刷基板、玻璃环氧基板及玻璃基板等。上述电子零件主体可以为用于搭载半导体元件的支承部件。
由于特别需求高精度地形成的粘接剂层,因此,上述电子零件主体优选为电路基板、保护玻璃、半导体晶片或切割后的半导体晶片。
由于特别需求高精度地形成的粘接剂层,因此,上述第一电子零件主体优选为用于搭载半导体元件搭的支承部件或半导体元件,进一步优选为电路基板或半导体元件,更优选为电路基板或切割后的半导体晶片。由于特别需求高精度地形成的粘接剂层,因此,上述第二电子零件主体优选为半导体元件,更优选为切割后的半导体晶片。
由于特别要求高精度地形成的粘接剂层,因此,优选上述第一电子零件主体为电路基板或切割后的半导体晶片、且上述第二电子零件主体为切割后的半导体晶片,进一步更优选上述第一电子零件主体为电路基板、且上述第二电子零件主体为切割后的半导体晶片。上述电子零件优选为半导体装置用电子零件。
上述电子零件优选具备半导体元件,优选为半导体装置。
以下,参照图2(a)~(e)对图1所示的电子零件的制造方法的一例进行说明。
首先,如图2(a)所示,在第一电子零件主体2上,使用喷墨装置11涂布喷墨用粘接剂,形成粘接剂层12(涂布工序)。在此,在第一电子零件主体2的表面上整体地涂布粘接剂。涂布后,粘接剂的液滴相互混合,成为图2(b)所示的状态的粘接剂层12。
如图3所示,喷墨装置11在内部具有油墨罐21、喷出部22、循环流路部23。
循环流路部23在循环流路部23内具有缓冲罐23A和泵23B。但是,如图4所示的喷墨装置11X,循环流路部23X也可以在循环流路部23X内不具有缓冲罐和泵。上述循环流路部优选在上述循环流路部内具有上述缓冲罐,优选具有上述泵。另外,上述循环流路部在上述循环流路部内除具有缓冲罐及泵之外,还可以具有流速计、温度计、过滤器、液面传感器等。
在油墨罐21中贮存有上述粘接剂。从喷出部22(喷墨头)喷出上述粘接剂。喷出部22包含喷出喷嘴。喷出部22与油墨罐21连接。油墨罐21和喷出部22经由流路进行连接。循环流路部23的一端与喷出部22连接,另一端与油墨罐21连接。上述粘接剂在循环流路部23的内部流动。
在具备缓冲罐23A或泵23B的情况下,缓冲罐23A及泵23B优选分别配置于喷出部22和油墨罐21之间。缓冲罐23A配置于比泵23B更靠喷出部22侧。泵23B配置于比缓冲罐23A更靠油墨罐21侧。在缓冲罐23A中临时贮存有上述粘接剂。
作为上述喷出部,可举出:热方式、泡沫喷射方式、电磁阀方式或压电方式的喷墨头等。另外,作为上述喷出部内的循环流路部,可举出从共通循环流路(歧管)向喷出喷嘴分流的端射式或油墨在喷出喷嘴中循环的侧射式。从提高粘接剂的喷出性、更进一步提高微细的粘接剂层的形成精度的观点出发,优选上述喷墨装置为使用压电方式的喷墨头的喷墨装置,在上述涂布工序中,通过压电元件的作用而涂布上述粘接剂。
关于上述粘接剂的循环方法,可以利用油墨的自重,或利用泵等进行加压、减压等并进行循环。这些方法可以组合多个而使用。作为泵,可举出:滚筒方式的无脉动泵、螺旋桨泵、齿轮泵及隔膜泵等。从提高循环效率、更进一步提高微细的粘接剂层的形成精度的观点出发,上述循环流路部优选含有使上述粘接剂在上述循环流路部内转移的泵。
在上述喷出部的喷出喷嘴中,优选保持在适当的压力、且在其范围内压力变动(脉动)少。在使用泵等的情况下,为了抑制泵的脉动,优选在泵和上述喷出部之间设置衰减器。作为这种衰减器,可举出临时贮存上述粘接剂的缓冲罐或膜式的缓冲器等。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述循环流路部优选在上述循环流路部内包含临时贮存上述粘接剂的缓冲罐。
在将上述粘接剂一边进行加热一边使其循环的情况下,通过在上述油墨罐内导入加热器、或在上述循环流路部使用加热器,可以调节上述粘接剂的温度。
在将上述粘接剂一边进行加热一边使其循环的情况下,通过在油墨罐21内导入加热器,或在循环流路部23、23X使用加热器,可以调节上述粘接剂的温度。
在上述的涂布工序中,在喷墨装置11内,将上述粘接剂从油墨罐21移动到喷出部22之后,使未从喷出部22喷出的上述粘接剂在循环流路部23内流动而移动到油墨罐21。由此,在上述的涂布工序中,优选使上述粘接剂一边循环,一边进行涂布。
接着,如图2(b)、(c)所示,在上述的涂布工序后,由第一光照射部13对粘接剂层12照射光,使粘接剂层12进行固化(第一光照射工序)。由此,形成由第一光照射部13照射了光的粘接剂层12A。粘接剂层12A为预固化物,为B阶化粘接剂层。优选使该上述B阶化粘接剂层在25℃下的弹性模量为5.0×102Pa以上、8.0×104Pa以下。由后述的第二光照射部14照射光的情况下,由第一光照射部13所照射的光的波长或照射强度和由后述的第二光照射部14所照射的光的波长或照射强度可以相同,也可以不同。从更进一步提高粘接剂层的固化性的观点出发,优选由第二光照射部14所照射的照射强度比由第一光照射部13所照射的照射光强度强。在使用光固化性化合物和光及热固化性化合物的情况下,为了控制光固化性,优选进行上述第一光照射工序和后述的第二光照射工序。
需要说明的是,“由第一光照射部13对粘接剂层12照射光,使粘接剂层12进行固化”也包括进行反应而成为增粘状态。
作为进行光照射的装置,没有特别限定,可举出产生紫外线的发光二极管(UV-LED)、金属卤化物灯、高压水银灯及超高压水银灯等。从更进一步提高粘接剂层的形成精度的观点出发,特别优选在第一光照射部中使用UV-LED。
接着,如图2(c)、(d)所示,在上述的第一光照射工序后,由与第一光照射部13不同的第二光照射部14对由第一光照射部13照射了光的粘接剂层12A照射光,可以使粘接剂层12A进一步进行固化(第二光照射工序)。由此,形成由第二光照射部14照射了光的粘接剂层12B。粘接剂层12B为预固化物,为B阶化粘接剂层。优选使该上述B阶化粘接剂层的表面在25℃下的弹性模量为5.0×102Pa以上、8.0×104Pa以下。需要说明的是,上述第二光照射工序后的B阶化粘接剂层和上述第一光照射后的B阶化粘接剂层中,优选使上述第一光照射后的B阶化粘接剂层的表面在25℃下的弹性模量为5.0×102Pa以上、8.0×104Pa以下。更优选使上述第二光照射工序后的B阶化粘接剂层和上述第一光照射后的B阶化粘接剂层这两者的表面在25℃下的弹性模量为5.0×102Pa以上、8.0×104Pa以下。
上述的第二光照射工序优选在后述的叠层工序前进行,优选在加热工序前进行。从更进一步高精度地形成固化的粘接剂层的观点出发,优选进行上述第二光照射工序。但是,上述第二光照射工序不一定需要进行,在上述第一光照射工序后,可以不进行上述第二光照射工序而进行后述的叠层工序。
接着,如图2(d)、(e)所示,在上述的第二光照射工序后,在照射了光的粘接剂层12B上配置第二电子零件主体4,使第一电子零件主体2和第二电子零件主体4经由照射了光的粘接剂层12B而赋予压力并贴合,得到一次叠层体1A(叠层工序)。需要说明的是,在上述第一光照射工序后,在不进行上述第二光照射工序的情况下,在照射了光的粘接剂层12A上配置第二电子零件主体4,将第一电子零件主体2和第二电子零件主体4隔着照射了光的粘接剂层12A并施加压力而贴合,得到一次叠层体(叠层工序)。
接着,在上述的叠层工序后,将一次叠层体1A进行加热,使第一电子零件主体2和第二电子零件主体4之间的粘接剂层12B固化,得到电子零件(加热工序)。结果得到喷墨用粘接剂的固化物。这样,可以得到图1所示的电子零件1。
需要说明的是,通过重复上述涂布工序和上述第一光照射工序,可以将粘接剂层进行多层化而形成多层的粘接剂层。如图5所示,可以得到具备叠层有多个粘接剂层32A、32B、32C的粘接剂层32的电子零件31。
在上述电子零件的制造方法中,从提高粘接剂的喷出性及转移性、更进一步高精度地形成固化的粘接剂层的观点出发,进行循环的上述粘接剂的温度优选为30℃以上,更优选为40℃以上,优选为120℃以下,更优选为100℃以下。
从更进一步高精度地形成固化的粘接剂层的观点出发,在上述叠层工序中,在贴合时施加的压力优选为0.01MPa以上,更优选为0.05MPa以上,优选为10MPa以下,更优选为8MPa以下。
从更进一步高精度地形成固化的粘接剂层的观点出发,在上述叠层工序中,贴合时的温度优选为30℃以上,更优选为40℃以上,优选为150℃以下,更优选为130℃以下。
上述粘接剂具有光固化性及热固化性。上述粘接剂含有上述第一光固化性化合物、上述第二光固化性化合物、上述热固化性化合物、上述光自由基引发剂、可以与上述热固化性化合物发生反应的化合物。上述第一光固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯。上述粘接剂优选含有光及热固化性化合物(可通过照射光及加热这两者固化的固化性化合物)。上述粘接剂优选含有固化促进剂。
以下,对可以用于上述粘接剂的各成分的详细进行说明。
(光固化性化合物)
将具有1个(甲基)丙烯酰基的光固化性化合物称为第一光固化性化合物(A1))。将具有2个以上(甲基)丙烯酰基的光固化性化合物称为第二光固化性化合物(A2)。第一光固化性化合物(A1)例如为单官能化合物。第二光固化性化合物(A2)具有2个以上的(甲基)丙烯酰基。第二光固化性化合物(A2)例如为多官能化合物。由于第二光固化性化合物(A2)具有2个以上的(甲基)丙烯酰基,因此,通过照射光而进行聚合并固化。第一光固化性化合物(A1)及第二光固化性化合物(A2)可以分别使用仅1种,也可以组合使用2种以上。
在本说明书中,具有(甲基)丙烯酰基的固化性化合物是指具有甲基丙烯酰基和丙烯酰基中的至少之一的化合物。
通过组合使用第一光固化性化合物(A1)和第二光固化性化合物(A2)作为光固化性化合物,可以高精度地形成固化后的粘接剂层。
作为第二光固化性化合物(A2),可举出:多元醇的(甲基)丙烯酸加成物、多元醇的环氧化物改性物的(甲基)丙烯酸加成物、聚氨酯(甲基)丙烯酸酯类、及聚酯(甲基)丙烯酸酯类等。作为上述多元醇,可举出:二乙二醇、三乙二醇、聚乙二醇、二丙二醇、三丙二醇、聚丙二醇、三羟甲基丙烷、环己烷二甲醇、三环癸烷二甲醇、双酚A的氧化烯烃加成物、及季戊四醇等。
第二光固化性化合物(A2)的具体例子可以为二官能的(甲基)丙烯酸酯,也可以为三官能的(甲基)丙烯酸酯,还可以为四官能以上的(甲基)丙烯酸酯。
作为二官能的(甲基)丙烯酸酯,可举出例如:1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、2,4-二甲基-1,5-戊二醇二(甲基)丙烯酸酯、丁基乙基丙二醇二(甲基)丙烯酸酯、乙氧基化环己烷甲醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、低聚乙二醇二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、2-乙基-2-丁基丁二醇二(甲基)丙烯酸酯、2-乙基-2-丁基丙二醇二(甲基)丙烯酸酯、三环癸烷二(甲基)丙烯酸酯、及二丙二醇二(甲基)丙烯酸酯等。
作为三官能的(甲基)丙烯酸酯,可举出例如:三羟甲基丙烷三(甲基)丙烯酸酯、三羟甲基乙烷三(甲基)丙烯酸酯、三羟甲基丙烷的氧化烯烃改性三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯、三羟甲基丙烷三((甲基)丙烯酰氧基丙基)醚、异氰脲酸氧化烯烃改性三(甲基)丙烯酸酯、丙酸二季戊四醇三(甲基)丙烯酸酯、三((甲基)丙烯酰氧基乙基)异氰脲酸酯、及山梨糖醇三(甲基)丙烯酸酯等。
作为四官能的(甲基)丙烯酸酯,可举出例如:季戊四醇四(甲基)丙烯酸酯、山梨糖醇四(甲基)丙烯酸酯、二(三羟甲基丙烷)四(甲基)丙烯酸酯、以及丙酸二季戊四醇四(甲基)丙烯酸酯等。
作为五官能的(甲基)丙烯酸酯,可举出例如:山梨糖醇五(甲基)丙烯酸酯、及二季戊四醇五(甲基)丙烯酸酯。
作为六官能的(甲基)丙烯酸酯,可举出例如:二季戊四醇六(甲基)丙烯酸酯、山梨糖醇六(甲基)丙烯酸酯、及磷腈的氧化烯烃改性六(甲基)丙烯酸酯等。
上述“(甲基)丙烯酸酯”的用语表示丙烯酸酯或甲基丙烯酸酯。上述“(甲基)丙烯酰基”的用语表示丙烯酰基或甲基丙烯酰基。
第二光固化性化合物(A2)优选为具有多环骨架或聚氨酯骨架、且具有2个以上的(甲基)丙烯酰基的第二光固化性化合物。通过使用该第二光固化性化合物,可以提高上述粘接剂的固化物的耐湿性及耐湿热性。因此,可以提高电子零件的可靠性。上述多官能化合物(A1)可以具有多环骨架,也可以具有聚氨酯骨架。
第二光固化性化合物(A2)只要具有多环骨架或聚氨酯骨架并且具有2个以上的(甲基)丙烯酰基,则没有特别限制。多官能化合物(A1)可以使用具有多环骨架或聚氨酯骨架并且具有2个以上的(甲基)丙烯酰基的以往公知的多官能化合物。上述多官能化合物(A1)由于具有2个以上的(甲基)丙烯酰基,因此,由于照射光而发生聚合,并且固化。上述多官能化合物(A1)可以仅使用1种,也可以组合使用2种以上。
作为具有多环骨架、且具有2个以上(甲基)丙烯酰基的第二光固化性化合物(A2)的具体例,可举出:三环癸烷二甲醇二(甲基)丙烯酸酯、异冰片基二甲醇二(甲基)丙烯酸酯及二环戊烯基二甲醇二(甲基)丙烯酸酯等。从更进一步提高固化物的耐湿性及耐湿热性的观点出发,优选第二光固化性化合物(A2)为三环癸烷二甲醇二(甲基)丙烯酸酯。
上述多环骨架为连续地具有多个环状骨架的结构,且表示环进行缩合的结构。上述多环骨架并不是双酚骨架、联苯基骨架或三苯基甲烷骨架等这样的2个以上的环不进行缩合,而是分别地含有的结构。作为上述多环骨架,可举出多环脂环式骨架及多环芳香族骨架等。
作为上述多环脂环式骨架,可举出:双环链烷骨架、三环链烷骨架、四环链烷骨架及异冰片基骨架等。
作为上述多环芳香族骨架,可举出:萘环骨架、蒽环骨架、菲环骨架、丁省环骨架、1,2-苯并菲(chrysene)环骨架、三邻亚苯环骨架、丁苯环(Tetraphene)骨架、芘环骨架、并五苯环骨架、苉环骨架及苝环骨架等。
具有聚氨酯骨架、且具有2个以上的(甲基)丙烯酰基的多官能化合物没有特别限定,例如通过以下的方法而得到。使多元醇和2官能以上的异氰酸酯反应,进一步使具有醇或酸基的(甲基)丙烯酸单体与残留的异氰酸酯基反应。也可以使具有羟基的(甲基)丙烯酸单体与2官能以上的异氰酸酯反应。具体而言,例如,使三羟甲基丙烷1摩尔和异佛尔酮二异氰酸酯3摩尔在锡系催化剂下反应。通过使残留于得到的化合物中的异氰酸酯基和作为具有2摩尔的羟基的丙烯酸单体的羟基乙基丙烯酸酯反应,可得到上述聚氨酯改性(甲基)丙烯氧化合物。
作为上述多元醇,没有特别限定,可举出例如:乙二醇、甘油、山梨糖醇、三羟甲基丙烷及(聚)丙二醇等。
上述异氰酸酯只要为2官能以上,就没有特别限定。作为上述异氰酸酯,可举出例如:异佛尔酮二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯、二苯基甲烷-4,4’-二异氰酸酯(MDI)、氢化MDI、聚合MDI、1,5-萘二异氰酸酯、降冰片烷二异氰酸酯、联甲苯胺二异氰酸酯、苯二甲二异氰酸酯(XDI)、氢化XDI、赖氨酸二异氰酸酯、三苯基甲烷三异氰酸酯、三(异氰酸酯苯基)硫代磷酸酯、四甲基二甲苯二异氰酸酯、及1,6,10-十一烷三异氰酸酯等。
作为第一光固化性化合物(A1)的具体例,可举出:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸3-羟基丙酯、(甲基)丙烯酸2-羟基丁酯、(甲基)丙烯酸3-羟基丁酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸烯丙酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸苯酯、(甲基)丙烯酸2-甲氧基乙酯、(甲基)丙烯酸2-苯氧基乙酯、甲氧基二乙二醇(甲基)丙烯酸酯、甲氧基三乙二醇(甲基)丙烯酸酯、甲氧基丙二醇(甲基)丙烯酸酯、甲氧基二丙二醇(甲基)丙烯酸酯、(甲基)丙烯酸异冰片酯、二环戊二烯基(甲基)丙烯酸酯、2-羟基-3-苯氧基丙基(甲基)丙烯酸酯、甘油单(甲基)丙烯酸酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸二羟基环戊二烯基酯、(甲基)丙烯酸双环戊烯基酯、(甲基)丙烯酸双环戊烯氧基乙酯、(甲基)丙烯酸双环戊烷基酯、萘基(甲基)丙烯酸酯、(甲基)丙烯酸月桂酯、及(甲基)丙烯酸硬脂基酯等。
从更进一步抑制孔、更进一步降低暴露在高温时的脱气,并且提高耐湿可靠性的观点出发,第一光固化性化合物(A1)优选含有(甲基)丙烯酸碳原子数8~21的烷基酯。上述(甲基)丙烯酸碳原子数8~21的烷基酯可以是直连状,也可以是支链状。作为上述(甲基)丙烯酸碳原子数8~21的烷基酯,可以使用(甲基)丙烯酸碳原子数8~16的烷基酯。为了进一步有效地发挥本发明的效果,(甲基)丙烯酸烷基酯中的烷基的碳原子数优选为18以下,更优选为16以下。
作为上述(甲基)丙烯酸碳原子数8~21的烷基酯的具体例子,可以列举,(甲基)丙烯酸辛酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸硬脂酯、以及(甲基)丙烯酸异硬脂酯。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述粘接剂100重量%中,第一光固化性化合物(A1)和第二光固化性化合物(A2)的总含量优选为5重量%以上,更优选为10重量%以上,优选为80重量%以下,更优选为70重量%以下。从更进一步提高粘接剂层的厚度精度、另外在粘接剂层中更进一步不易产生孔的观点出发,上述粘接剂100重量%中,第一光固化性化合物(A1)和第二光固化性化合物(A2)的合计含量特别优选为5重量%以上、80重量%以下。
从更进一步抑制孔、更进一步低减暴露于高温时的脱气、且更进一步提高耐湿可靠性的观点出发,第一光固化性化合物(A1)和第二光固化性化合物(A2)的合计100重量%中,优选第一光固化性化合物(A1)的含量为50重量%以上、99.9重量%以下,第二光固化性化合物(A2)的含量为0.1重量%以上、50重量%以下,更优选第一光固化性化合物(A1)的含量为55重量%以上、99重量%以下,第二光固化性化合物(A2)的含量为1重量%以上、45重量%以下,进一步优选第一光固化性化合物(A1)的含量为60重量%以上、98重量%以下,第二光固化性化合物(A2)的含量为2重量%以上、40重量%以下。第一光固化性化合物(A1)和第二光固化性化合物(A2)的合计100重量%中,第一光固化性化合物(A1)的含量可以为50重量%以上、99.95重量%以下,第二光固化性化合物(A2)的含量可以为0.05重量%以上、50重量%以下,第一光固化性化合物(A1)的含量可以为70重量%以上、99.9重量%以下,第二光固化性化合物(A2)的含量可以为0.1重量%以上、30重量%以下,第一光固化性化合物(A1)的含量可以为80重量%以上、99.5重量%以下,第二光固化性化合物(A2)的含量可以为0.5重量%以上、20重量%以下。
从更进一步抑制孔、更进一步降低暴露于高温时的脱气粘接性、且进一步提高耐湿可靠性的观点出发,上述粘接剂100重量%中,第一光固化性化合物(A1)所含的(甲基)丙烯酸碳原子数8~21的烷基酯的含量优选为1重量%以上,更优选为5重量%以上,优选为70重量%以下,更优选为50重量%以下。
(光及热固化性化合物)
从更进一步提高粘接剂层的厚度精度,另外使得粘接剂层更加不易产生孔的观点出发,上述粘接剂优选含有光及热固化性化合物。作为上述光及热固化性化合物,可举出各种具有光固化性官能团(光固化性反应性基团)和各种热固化性官能团的化合物。从更进一步高精度地形成固化的粘接剂层的观点出发,上述光及热固化性化合物的上述光固化性反应性基团优选为(甲基)丙烯酰基。从更进一步高精度地形成固化的粘接剂层的观点出发,优选上述光及热固化性化合物具有1个以上的(甲基)丙烯酰基,且具有1个以上(环状醚基和环状硫醚基的总量)的环状醚基或环状硫醚基,更优选具有1个以上的(甲基)丙烯酰基,且具有1个以上的环氧基或环硫乙烷基,另外,优选具有1个以上的(甲基)丙烯酰基,且具有1个以上的环状醚基,更优选具有1个以上的(甲基)丙烯酰基,且具有1个以上的环氧基。上述光及热固化性化合物可以具有环状硫醚基。上述光及热固化性化合物可以使用仅1种,也可以组合使用2种以上。
上述第一光固化性化合物、上述第二光固化性化合物及上述热固化性化合物作为与上述光及热固化性化合物不同的成分进行配合。
作为上述光及热固化性化合物,没有特别限定,可举出:具有(甲基)丙烯酰基和环氧基的化合物、环氧化合物的部分(甲基)丙烯酸化物、聚氨酯改性(甲基)丙烯酸环氧化合物等。
作为上述具有(甲基)丙烯酰基和环氧基的化合物,可举出:缩水甘油基(甲基)丙烯酸酯、及(甲基)丙烯酸4-羟基丁酯缩水甘油醚等。
作为上述环氧化合物的部分(甲基)丙烯酸化物,通过使环氧化合物和(甲基)丙烯酸按照常规方法在催化剂的存在下反应而得到。作为可以用于上述环氧化合物的部分(甲基)丙烯酸化物的环氧化合物,可举出酚醛清漆型环氧化合物及双酚型环氧化合物等。作为上述酚醛清漆型环氧化合物,可举出:酚醛型环氧化合物、甲酚醛型环氧化合物、联苯基酚醛清漆型环氧化合物、三酚醛型环氧化合物、及二环戊二烯酚醛清漆型环氧化合物等。作为上述双酚型环氧化合物,可举出:双酚A型环氧化合物、双酚F型环氧化合物、2,2’-二烯丙基双酚A型环氧化合物、氢化双酚型环氧化合物、及聚氧丙烯双酚A型环氧化合物等。通过适当变更环氧化合物和(甲基)丙烯酸的配合量,可以得到所期望的丙烯酸化率的环氧化合物。相对于环氧基1当量,(甲基)丙烯酸的配合量优选为0.1当量以上,更优选为0.2当量以上,优选为0.7当量以下,更优选为0.5当量以下。
上述聚氨酯改性(甲基)丙烯酸环氧化合物例如通过以下的方法而得到。使多元醇和2官能以上的异氰酸酯反应,另外使具有酸基的(甲基)丙烯酸单体及缩水甘油与残留的异氰酸酯基反应。或者,可以不使用多元醇,而使具有羟基的(甲基)丙烯酸单体和缩水甘油与2官能以上的异氰酸酯反应。或者,即使使缩水甘油与具有异氰酸酯基的(甲基)丙烯酸酯单体反应,也可得到上述聚氨酯改性(甲基)丙烯酸环氧化合物。具体而言,例如,首先使三羟甲基丙烷1摩尔和异佛尔酮二异氰酸酯3摩尔在锡类催化剂下反应。通过使残留于得到的化合物中的异氰酸酯基和作为具有羟基的丙烯酸单体的丙烯酸羟基乙酯、及作为具有羟基的环氧酯的缩水甘油反应,可得到上述聚氨酯改性(甲基)丙烯酸环氧化合物。
作为上述多元醇,没有特别限定,可举出例如:乙二醇、甘油、山梨糖醇、三羟甲基丙烷、及(聚)丙二醇等。
上述异氰酸酯只要为2官能以上,就没有特别限定。作为上述异氰酸酯,可举出例如:异佛尔酮二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯、二苯基甲烷-4,4’-二异氰酸酯(MDI)、氢化MDI、聚合MDI、1,5-萘二异氰酸酯、降冰片烷二异氰酸酯、联甲苯胺二异氰酸酯、苯二甲二异氰酸酯(XDI)、氢化XDI、赖氨酸二异氰酸酯、三苯基甲烷三异氰酸酯、三(异氰酸酯苯基)硫代磷酸酯、四甲基二甲苯二异氰酸酯、及1,6,10-十一烷三异氰酸酯等。
具有上述(甲基)丙烯酰基和环状硫醚基的化合物例如通过将上述具有(甲基)丙烯酰基和环氧基的化合物的环氧基变换为环状硫醚基而得到。作为变换为上述环状硫醚基的方法,优选在含有硫化剂的第一溶液中连续或间歇地添加含有上述具有(甲基)丙烯酰基和环氧基的化合物的溶液之后、连续或间歇地进一步添加含有硫化剂的第二溶液的方法。通过该方法,可以将上述环氧基变换为环状硫醚基。
作为上述硫化剂,可举出:硫氰酸盐类、硫脲类、膦硫化物、二甲基硫代甲酰胺及N-甲基苯并噻唑-2-硫酮等。作为上述硫氰酸盐类,可举出硫氰酸钠、硫氰酸钾及硫氰酸钠等。
从更进一步提高固化后的粘接剂层的厚度精度、更进一步抑制孔的产生的观点出发,上述光及热固化性化合物优选含有(甲基)丙烯酸4-羟基丁酯缩水甘油醚,更优选含有丙烯酸4-羟基丁酯缩水甘油醚。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述粘接剂100重量%中,上述光及热固化性化合物的含量优选为0.5重量%以上,更优选为1重量%以上,优选为80重量%以下,更优选为70重量%以下,(甲基)丙烯酸4-羟基丁酯缩水甘油醚的含量优选为0.5重量%以上,更优选为1重量%以上,优选为80重量%以下,更优选为70重量%以下。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述粘接剂100重量%中,上述光固化性化合物和上述光及热固化性化合物的合计的含量优选为10重量%以上,更优选为20重量%以上,优选为80重量%以下,更优选为70重量%以下。
(热固化性化合物)
作为热固化性化合物,可举出具有环状醚基的热固化性化合物、及具有环硫乙烷基等环状硫醚基的热固化性化合物等。从更进一步高精度地形成固化的粘接剂层的观点出发,作为热固化性化合物,可使用具有1个以上(环状醚基和环状硫醚基的总量)的环状醚基或环状硫醚基的热固化性化合物。具有环状醚基的热固化性化合物更优选为具有环氧基的热固化性化合物(环氧化合物)。上述热固化性化合物可以为具有环状硫醚基的热固化性化合物。上述热固化性化合物可以使用仅1种,也可以组合使用2种以上。
作为上述环氧化合物,没有特别限定,可举出例如:酚醛清漆型环氧化合物及双酚型环氧化合物等。作为上述酚醛清漆型环氧化合物,可举出:酚醛型环氧化合物、甲酚醛型环氧化合物、联苯基酚醛清漆型环氧化合物、三酚醛型环氧化合物、及二环戊二烯酚醛清漆型环氧化合物等。作为上述双酚型环氧化合物,可举出:双酚A型环氧化合物、双酚F型环氧化合物、2,2’-二烯丙基双酚A型环氧化合物、氢化双酚型环氧化合物、及聚氧丙烯双酚A型环氧化合物等。另外,作为上述环氧化合物,此外,也可举出环式脂肪族环氧化合物及缩水甘油基胺等。上述环氧化合物可以使用仅1种,也可以组合2种以上。
上述具有环状硫醚基的热固化性化合物例如通过将上述具有环氧基的环氧化合物的环氧基变换为环状硫醚基而得到。作为上述变换为环状硫醚基的方法,优选在含有硫化剂的第一溶液中连续或间歇地添加含有具有上述环氧基的环氧化合物的溶液之后,连续或间歇地进一步添加含有硫化剂的第二溶液的方法。通过该方法,可以将上述环氧基变换为环状硫醚基。
作为上述硫化剂,可举出:硫氰酸盐类、硫脲类、膦硫化物、二甲基硫代甲酰胺及N-甲基苯并噻唑-2-硫酮等。作为上述硫氰酸盐类,可举出:硫氰酸钠、硫氰酸钾及硫氰酸钠等。
从更进一步高精度地形成粘接剂层、在粘接剂层中更进一步不易产生孔的观点出发,优选上述热固化性化合物具有芳香族骨架。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述粘接剂100重量%中,上述热固化性化合物的含量优选为10重量%以上,更优选为20重量%以上,优选为80重量%以下,更优选为70重量%以下。
(光自由基引发剂)
作为光聚合引发剂,可举出光自由基聚合引发剂及光阳离子聚合引发剂等。在本发明中,作为光聚合引发剂,可使用光自由基聚合引发剂。上述光自由基引发剂可以使用仅1种,也可以组合使用2种以上。
上述光自由基聚合引发剂没有特别限定。上述光自由基聚合引发剂为通过照射光而产生自由基、用于引发自由基聚合反应的化合物。作为上述光自由基聚合引发剂的具体例,可举出例如:苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻异丙基醚等苯偶姻化合物;2-羟基-2-甲基-1-苯基-丙烷-1-酮等烷基苯酮化合物;苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、1,1-二氯苯乙酮等苯乙酮化合物;2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1-酮、2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁烷-1-酮、2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁酮-1、2-(二甲基氨基)-2-[(4-甲基苯基)甲基]-1-[4-(4-吗啉基)苯基]-1-丁酮、N,N-二甲基氨基苯乙酮等氨基苯乙酮化合物;2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌等蒽醌化合物;2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、2-氯噻吨酮、2,4-二异丙基噻吨酮等噻吨酮化合物;苯乙酮二甲基缩酮、苄基二甲基缩酮等缩酮化合物;2,4,6-三甲基苯甲酰基二苯基氧化膦、双(2,4,6-三甲基苯甲酰基)-苯基氧化膦等酰基氧化膦化合物;1,2-辛烷二酮、1-[4-(苯基硫代)-2-(邻苯甲酰基肟)]、乙酮、1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]-1-(邻乙酰基肟)等肟酯化合物;双(环戊二烯基)二苯基-钛、双(环戊二烯基)二氯钛、双(环戊二烯基)双(2,3,4,5,6-五氟苯基)钛、双(环戊二烯基)双(2,6-二氟-3-(吡咯-1-基)苯基)钛等二茂钛化合物等。上述光自由基聚合引发剂可以使用仅1种,也可以组合使用2种以上。
也可以与上述光自由基聚合引发剂同时使用光聚合引发助剂。作为该光聚合引发助剂,可举出:N,N-二甲基氨基苯甲酸乙酯、N,N-二甲基氨基苯甲酸异戊基酯、戊基-4-二甲基氨基苯甲酸酯、三乙基胺及三乙醇胺等。可以使用这些物质以外的光聚合引发助剂。上述光聚合引发助剂可以使用仅1种,也可以组合使用2种以上。
上述粘接剂100重量%中,上述光自由基引发剂的含量优选为0.1重量%以上,更优选为0.2重量%以上,优选为10重量%以下,更优选为5重量%以下。
(可以与热固化性化合物发生反应的化合物)
可以与上述热固化性化合物发生反应的化合物优选为热固化剂。可以与上述热固化性化合物发生反应的化合物可以仅使用1种,也可以组合使用2种以上。
作为可以与上述热固化性化合物发生反应的化合物,可举出:有机酸、胺化合物、酰胺化合物、酰肼化合物、咪唑化合物、咪唑啉化合物、酚化合物、脲化合物、聚硫醚化合物及酸酐等。作为可以与上述热固化性化合物发生反应的化合物,可以使用胺-环氧加合物等改性多胺化合物。还可以使用这些物质以外的热固化剂。
上述胺化合物是指具有1个以上的伯~叔氨基的化合物。作为上述胺化合物,可举出例如:(1)脂肪族胺、(2)脂环族胺、(3)芳香族胺、(4)酰肼、及(5)胍衍生物等。另外,可以使用环氧化合物加成多胺(环氧化合物和多胺的反应物)、迈克尔加成多胺(α,β-不饱和酮和多胺的反应物)、曼尼期加成多胺(多胺和福尔马林及苯酚的缩合体)、硫脲加成多胺(硫脲和多胺的反应物)、酮封链多胺(酮化合物和多胺的反应物[酮亚胺])等加合物体。
作为上述(1)脂肪族胺,可举出:二亚乙基三胺、三亚乙基四胺、四亚乙基五胺、及二乙基氨基丙基胺等。
作为上述(2)脂环族胺,可举出:薄荷烯二胺、异佛尔酮二胺、N-氨基乙基哌嗪、3,9-双(3-氨基丙基)-2,4,8,10-四氧杂螺(5,5)十一烷加合物、双(4-氨基-3-甲基环己基)甲烷、及双(4-氨基环己基)甲烷等。
作为上述(3)芳香族胺,可举出:1,3-二氨基甲苯、1,4-二氨基甲苯、2,4-二氨基甲苯、3,5-二乙基-2,4-二氨基甲苯、3,5-二乙基-2,6-二氨基甲苯、2,4-二氨基茴香醚、4,4’-二氨基二苯基甲烷、4,4’-二氨基二苯基砜、4,4’-亚甲基-双[2-氯苯胺]、4,4’-二氨基二苯基醚、2,2-双[4-[4-氨基苯氧基]苯基]丙烷、双[4-[4-氨基苯氧基]苯基]砜、1,3-双[4-氨基苯氧基]苯、亚甲基双-(2-乙基-6甲基苯胺)、3,3’-二乙基-4,4’-二氨基二苯基甲烷、及3,3’,5,5’-四乙基-4,4’-二氨基二苯基甲烷等。
作为上述(4)酰肼,可举出:碳酸二酰肼、己二酸二酰肼、癸二酸二酰肼、十二烷二酸二酰肼、及间苯二甲酸二酰肼等。
作为上述(5)胍衍生物,可举出:二氰基二酰胺、1-邻甲苯基缩二胍、α-2,5-二甲基缩胍、α,ω-二苯基双胍、α,α-双脒基胍基二苯基醚、对氯苯基缩二胍、α,α-六亚甲基双[ω-(对氯苯酚)]缩二胍、苯基缩二胍草酸酯、乙酰基胍、及二乙基氰基乙酰基胍等。
作为上述酚化合物,可举出多元酚化合物等。作为上述多元酚化合物,可举出例如:苯酚、甲酚、乙基苯酚、丁基苯酚、辛基苯酚、双酚A、四溴双酚A、双酚F、双酚S、4,4’-联苯基苯酚、萘骨架含有酚醛树脂、苯二甲骨架含有酚醛树脂、二环戊二烯骨架含有酚醛树脂、及芴骨架含有酚醛树脂等。
作为上述酸酐,可举出例如:邻苯二甲酸酐、四氢邻苯二甲酸酐、六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐、甲基纳迪克酸酐、十二烷基琥珀酸酐、氯菌酸酐、均苯四甲酸酐、二苯甲酮四羧酸酐、甲基环己烯四羧酸酐、偏苯三酸酐、及聚壬二酸酐等。
从更进一步提高粘结剂层的厚度精度,更加不易在粘接剂层中产生孔的观点来看,上述可以与热固化性化合物发生反应的化合物优选含有酸酐或芳香族胺,更加优选含有芳香族胺。
上述粘接剂100重量%中,可以与上述热固化性化合物发生反应的化合物的含量优选为1重量%以上,更优选为5重量%以上,优选为60重量%以下,更优选为50重量%以下。
(固化促进剂)
作为上述固化促进剂,可举出:叔胺、咪唑、季铵盐、季鏻盐、有机金属盐、磷化合物及脲系化合物等。
上述粘接剂100重量%中,上述固化促进剂的含量优选为0.01重量%以上,更优选为0.1重量%以上,优选为10重量%以下,更优选为5重量%以下。
(溶剂)
上述粘接剂不含有或含有溶剂。上述粘接剂可以含有溶剂,也可以不含有。从更进一步提高粘接剂层的厚度精度、另外在粘接剂层中更进一步不易产生孔的观点出发,上述粘接剂中的溶剂的含量越少越好。
作为上述溶剂,可举出水及有机溶剂等。从更进一步提高残留物的除去性的观点出发,优选有机溶剂。作为上述有机溶剂,可举出:乙醇等醇类、丙酮、甲基乙基酮、环己酮等酮类、甲苯、二甲苯、四甲基苯等芳香族烃类、溶纤剂、甲基溶纤剂、丁基溶纤剂、卡必醇、甲基卡必醇、丁基卡必醇、丙二醇单甲基醚、二丙二醇单甲基醚、二丙二醇二乙基醚、三丙二醇单甲基醚等二醇醚类、醋酸乙酯、醋酸丁酯、乳酸丁酯、溶纤剂醋酸酯、丁基溶纤剂醋酸酯、卡必醇醋酸酯、丁基卡必醇醋酸酯、丙二醇单甲基醚醋酸酯、二丙二醇单甲基醚醋酸酯、碳酸丙烯等酯类、辛烷、癸烷等脂肪族烃类、以及石油醚、石脑油等石油系溶剂等。
在上述粘接剂含有上述溶剂的情况下,上述粘接剂100重量%中,上述溶剂的含量优选为5重量%以下,更优选为1重量%以下,进一步优选为0.5重量%以下。
(填料)
上述粘接剂不含有或含有填料。上述粘接剂可以含有填料,也可以不含有。从更进一步提高粘接剂层的厚度精度、另外在粘接剂层中更进一步不易产生孔的观点出发,上述粘接剂中的填料的含量越少越好。另外,上述粘接剂中的填料的含量越少,越可抑制喷墨装置导致的喷出不良的产生。
作为上述填料,可举出:二氧化硅、滑石、粘土、云母、水滑石、氧化铝、氧化镁、氢氧化铝、氮化铝及氮化硼等。
在上述粘接剂含有上述填料的情况下,上述粘接剂100重量%中,上述填料的含量优选为5重量%以下,更优选为1重量%以下,进一步优选为0.5重量%以下。
(其它成分)
上述粘接剂可以含有其它成分。作为其它成分,没有特别限定,可举出:偶联剂等粘接助剂、颜料、染料、流平剂、消泡剂及阻聚剂等。
(电子零件的具体例)
以下,对使用本发明的一实施方式的喷墨用粘接剂得到的电子零件的其它具体例进行说明。
图6是示意性地表示使用本发明一实施方式的喷墨用粘接剂得到的电子零件的第一变形例的正面剖面图。
图6所示的半导体装置71为电子零件。半导体装置71具备:基板53A、粘接剂层72、第一半导体晶片73。基板53A在上表面具有第一连接端子53a。第一半导体晶片73在上表面具有连接端子73a。基板53A除没有设置第二连接端子53b之外,与后述的基板53同样地形成。
在基板53A上经由粘接剂层72叠层第一半导体晶片73。粘接剂层72通过使上述粘接剂光固化及热固化而形成。
第一半导体晶片73在上表面具有连接端子73a。从连接端子73a引出配线74。通过配线74,将连接端子73a和第一连接端子53a电连接。
图7示意性地表示使用本发明一实施方式的喷墨用粘接剂得到的电子零件的第二变形例的正面剖面图。
图7所示的半导体装置51为电子零件。半导体装置51具备叠层结构体52。叠层结构体52具有:基板53、粘接剂层54、经由粘接剂层54叠层于基板53上的第二半导体晶片55。在基板53上配置有第二半导体晶片55。在基板53上间接地叠层有第二半导体晶片55。在平面看,基板53比第二半导体晶片55大。基板53具有向比第二半导体晶片55更靠侧方伸出的区域。
粘接剂层54例如通过使固化性组合物固化而形成。使用有固化前的固化性组合物的固化性组合物层也可以具有粘合性。为了形成固化前的固化性组合物层,可以使用固化性组合物片。
基板53在上表面具有第一连接端子53a。第二半导体晶片55在上表面具有连接端子55a。从连接端子55a引出配线56。配线56的一端与设置于第二半导体晶片55上的连接端子55a连接。配线56的另一端与设置于基板53上的第一连接端子53a连接。利用配线56将连接端子55a和第一连接端子53a进行电连接。配线56的另一端也可以与第一连接端子53a以外的其它连接端子连接。配线56优选为接合线。
在叠层结构体52中的第二半导体晶片55上,经由粘接剂层61而叠层有第一半导体晶片62。粘接剂层61通过使上述粘接剂光固化及热固化而形成。
基板53在上表面具有第二连接端子53b。第一半导体晶片62在上表面具有连接端子62a。从连接端子62a引出配线63。配线63的一端与设置于第一半导体晶片62上的连接端子62a连接。配线63的另一端与设置于基板53上的第二连接端子53b连接。利用配线63将连接端子62a和第二连接端子53b进行电连接。配线63的另一端也可以与第二连接端子53b以外的其它连接端子进行连接。配线63优选为接合线。
半导体装置51可以通过在第二半导体晶片55上将具有光固化性及热固化性且为液态的粘接剂从喷墨装置中喷出、形成粘接剂层61而得到。与此相对,半导体装置71可以通过在基板53A上将具有光固化性及热固化性且为液态的粘接剂从喷墨装置中喷出、形成粘接剂层72而得到。
以下,列举实施例及比较例,具体地说明本发明。本发明并不仅限定于以下的实施例。
具有环硫乙烷基的化合物(A)的合成:
在备有搅拌机、冷却机及温度计的2L的反应机内,加入乙醇250mL、纯水250mL和硫氰酸钾20g,使硫氰酸钾溶解,制备第一溶液。其后,将容器内的温度保持在20~25℃的范围内。接着,一边将保持在20~25℃的容器内的第一溶液进行搅拌,一边以5mL/分钟的速度滴加双酚A型环氧树脂160g。滴加后,进一步搅拌30分钟,得到环氧化合物含有混合液。接着,准备在含有纯水100mL和乙醇100mL的溶液中溶解有硫氰酸钾20g的第二溶液。在得到的环氧化合物含有混合液中以5mL/分钟的速度添加得到的第二溶液之后,搅拌30分钟。搅拌后,进一步准备在含有纯水100mL和乙醇100mL的溶液中溶解有硫氰酸钾20g的第二溶液,以5mL/分钟的速度在容器内进一步添加该第二溶液,搅拌30分钟。其后,将容器内的温度冷却至10℃,搅拌2小时并使其反应。接着,在容器内加入饱和食盐水100mL,搅拌10分钟。搅拌后,在容器内进一步加入甲苯300mL,搅拌10分钟。其后,将容器内的溶液移至分液漏斗,静置2小时,使溶液分离。排出分液漏斗内的下方的溶液,取出上清液。在被取出的上清液中加入甲苯100mL并进行搅拌,静置2小时。进一步加入甲苯100mL并进行搅拌,静置2小时。接着,在加入有甲苯的上清液中加入硫酸镁50g,搅拌5分钟。搅拌后,利用滤纸除掉硫酸镁,将溶液进行分离。使用真空干燥机,将经分离的溶液在80℃下进行减压干燥,由此除去残存的溶剂。这样,得到环氧基被环硫乙烷基取代的具有环硫乙烷基的在25℃下为液态的化合物(A)。
具有环硫乙烷基的化合物(B)的合成:
在具有环硫乙烷基的化合物(A)的合成中,将双酚A型环氧树脂变更为丙烯酸4-羟基丁酯缩水甘油醚,除此之外,进行同样的操作,得到环氧基被环硫乙烷基取代的具有环硫乙烷基的在25℃下为液态的化合物(B)。
(实施例1)
粘接剂A的制备:
将作为光固化性化合物的三环癸烷二甲醇二丙烯酸酯(IRR-214K、Daicel-Allnex公司制造)2重量份、丙烯酸辛酯(NOAA、共荣社化学社制造)11重量份、作为光及热固化性化合物的丙烯酸4-羟基丁酯缩水甘油醚(4HBAGE、日本化成社制造)41重量份、作为热固化性化合物的双酚A型环氧树脂(YD-127、新日铁住金化学社制造)20重量份、作为热固化剂的液态酚醛树脂(苯酚固化剂、MEH8000H,明和化成社制造)20重量份、作为固化促进剂的DBU-辛酸盐(UCATSA-102、San-Apro社制造)1重量份、及作为光聚合引发剂的2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁酮-1(IRGACURE369、BASF社制造)5重量份均匀地混合,得到粘接剂A。
(实施例2~18及比较例1、2)
如下述的表1~4所示那样变更配合成分的种类及配合量,除此之外,得到以下的表2~4所示的粘接剂B~P及AA~AE。
(脱气量)
按照上述电子零件制造方法,经过图2(a)~(e)所示的各工序,在硅晶片上形成粘接剂层。重复将上述粘接剂在70℃下边进行循环边进行涂布的上述涂布工序和上述第一光照射工序(以365nm为主波长的UV-LED灯、100mW/cm2、0.1秒),形成长50mm×宽50mm×200μm的粘接剂层,在第二光照射工序(超高压水银灯、100mW/cm2、10秒)中进行光固化。再通过将得到的叠层体放入160℃、7个大气压的加压烘箱内并加热3小时而进行热固化,由此得到试验片。
测定该试验片的重量,在260℃下加热5分钟,然后,再次测定重量,由此算出脱气量。
[脱气量的判定标准]
○:脱气量低于0.3%;
×:脱气量为0.3%以上
(半导体装置的孔的确认)
准备配线的高度差为5μm的BGA基板(厚度0.3mm,涂布有市售焊锡抗蚀剂,且设置有5行×16列共80处放置长10mm×宽10mm的半导体芯片的场所)。按照上述的电子零件的制造方法,经过图2(a)~(e)所示的各工序,形成粘接剂层。重复将上述粘接剂在70℃下边进行循环边进行涂布的上述涂布工序和上述第一光照射工序(以365nm为主波长的UV-LED灯、100mW/cm2、0.1秒),形成长10mm×宽10mm×厚30μm的粘接剂层,在第二光照射工序(超高压水银灯、100mW/cm2、10秒)中进行光固化。其后,在粘接剂层上,使用芯片接合装置,在半导体芯片(长10mm×宽10mm×厚80μm)上将选定的硅裸片在110℃下、0.1MPa的条件下加压1秒,得到叠层体。叠层硅裸片之后,使用光学显微镜(基恩士公司制造的“数字显微镜VH-Z100”)确认粘接剂层的溢出低于100μm。通过将得到的叠层体放入160℃、7个大气压的加压烘箱内并加热3小时而进行热固化,由此得到80个半导体装置(叠层结构体)。
使用超声波探测映像装置(日立建机Finetech社制造的“mi-scopehyperII”)观察得到的半导体装置的粘接剂层的孔,按照下述的基准进行评价。
[孔的判定基准]
○○:几乎观察不到孔
○:稍微观察到孔(使用上没有问题)
×:观察到孔(使用上有问题)
(耐湿长期可靠性试验)
按照上述的电子零件的制造方法,经过图2(a)~(e)所示的各工序在硅晶片上形成粘接剂层。重复将上述粘接剂在70℃下边循环边进行涂布的上述涂布工序和上述第一光照射工序(以365nm为主波长的UV-LED灯、100mW/cm2、0.1秒),形成长3mm×宽3mm×厚30μm的粘接剂层,在第二光照射工序(超高压水银灯、100mW/cm2、10秒)中进行光固化。其后,在粘接剂层上,使用芯片接合装置,在半导体芯片(纵3mm×横3mm×厚度750μm)上将选定的硅裸片在110℃下、0.1MPa的条件下加压1秒,在将其放入160℃、7个大气压的加压烘箱内,加热3小时,使其热固化,由此得到粘接试验片。使用晶片抗切强度测定装置(Dage社制造的“Dage系列4000”、试验温度:260℃),进行初期抗切强度的测定,将未测定的粘接试验片在121℃、100RH%及2个大气压的条件下放置100小时、300小时及500小时,在100℃下干燥3小时。其后,使用晶片抗切强度测定装置(Dage社制造的“Dage系列4000”、试验温度:260℃),进行耐湿粘接试验后的晶片抗切强度的测定。按照以下的标准对耐湿长期可靠性粘接试验后进行判定。
[耐湿长期可靠性试验后的判定基准]
○○:粘接力的降低为0%以上~低于10%
○:粘接力的降低为10%以上~低于50%
△:粘接力的降低为50%以上~低于70%
×:粘接力的降低为70%以上
将使用的配合成分的详细示于下述的表1,将组成及结果示于下述的表2~4。配合成分的配合单位为重量份。
需要说明的是,关于实施例的粘接剂,根据JIS K2283,使用E型粘度计(东机产业社制造“TVE22L”),25℃及10rpm下的粘接剂的粘度为5mPa·s以上、1600mPa·s以下。
Claims (11)
1.一种喷墨用粘接剂,其含有:
具有1个(甲基)丙烯酰基的第一光固化性化合物、
具有2个以上(甲基)丙烯酰基的第二光固化性化合物、
光自由基引发剂、
具有1个以上的环状醚基或环状硫醚基的热固化性化合物、
能够与所述热固化性化合物发生反应的化合物,
所述第一光固化性化合物含有(甲基)丙烯酸碳原子数8~21的烷基酯。
2.如权利要求1所述的喷墨用粘接剂,其中,
所述第一光固化性化合物和所述第二光固化性化合物的合计100重量%中,所述第一光固化性化合物的含量为50重量%以上、99.9重量%以下,所述第二光固化性化合物的含量为0.1重量%以上、50重量%以下。
3.如权利要求1或2所述的喷墨用粘接剂,其中,
所述具有1个以上的环状醚基或环状硫醚基的热固化性化合物含有具有1个以上的环氧基或环硫乙烷基的热固化性化合物。
4.如权利要求1~3中任一项所述的喷墨用粘接剂,其含有具有1个以上的(甲基)丙烯酰基、且具有1个以上的环状醚基或环状硫醚基的光及热固化性化合物。
5.如权利要求4所述的喷墨用粘接剂,其中,
所述具有1个以上的(甲基)丙烯酰基、且具有1个以上的环状醚基或环状硫醚基的光及热固化性化合物包含具有1个以上的(甲基)丙烯酰基、且具有1个以上的环氧基或环硫乙烷基的光及热固化性化合物。
6.如权利要求5所述的喷墨用粘接剂,其中,
所述光及热固化性化合物含有(甲基)丙烯酸4-羟基丁酯缩水甘油醚。
7.如权利要求1~6中任一项所述的喷墨用粘接剂,其中,
根据JIS K2283测定的所述喷墨用粘接剂在25℃及10rpm下的粘度为5mPa·s以上、1600mPa·s以下。
8.一种半导体装置的制造方法,其具备:
在用于搭载半导体元件的支承部件或半导体元件的表面上,使用喷墨装置涂布权利要求1~7中任一项所述的喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述支承部件或所述半导体元件侧的相反一侧的表面上叠层半导体元件的工序;
在叠层了所述半导体元件后,使所述B阶化粘接剂层发生热固化的工序。
9.一种半导体装置的制造方法,其具备:
在半导体晶片的表面上,使用喷墨装置喷出权利要求1~7中任一项所述的喷墨用粘接剂,形成粘接剂层的涂布工序;
通过照射光而使所述粘接剂层发生固化,形成B阶化粘接剂层的工序;
在所述B阶化粘接剂层的与所述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;
使所述叠层体中的所述B阶化粘接剂层发生热固化的工序;
热固化后裁断所述叠层体的工序。
10.一种电子零件,其包括:第一电子零件主体、第二电子零件主体、以及将所述第一电子零件主体和所述第二电子零件主体连接在一起的粘接剂层,
所述粘接剂层为权利要求1~7中任一项所述的喷墨用粘接剂的固化物。
11.如权利要求10所述的电子零件,其中,
所述第一电子零件主体为用于搭载半导体元件的支承部件或半导体元件,
所述第二电子零件主体为半导体元件。
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10259773B2 (en) * | 2015-02-12 | 2019-04-16 | Sekisui Chemical Co., Ltd. | Curable composition for inkjet, and method for manufacturing electronic component |
JP6391545B2 (ja) * | 2015-09-30 | 2018-09-19 | 積水化学工業株式会社 | インクジェット用接着剤、半導体装置の製造方法及び電子部品 |
JP6735652B2 (ja) * | 2016-10-21 | 2020-08-05 | デクセリアルズ株式会社 | 半導体装置の製造方法 |
JP6905058B2 (ja) * | 2016-11-10 | 2021-07-21 | アグフア−ゲヴエルト,ナームローゼ・フエンノートシヤツプ | プリント回路板製造用はんだマスクインキジェットインキ |
KR102002881B1 (ko) * | 2017-06-08 | 2019-10-01 | 마이크로크래프트코리아 주식회사 | 잉크젯용 수지 조성물 및 이를 이용하여 제조된 인쇄 배선판 |
CN107699177B (zh) * | 2017-10-17 | 2020-07-10 | 烟台信友新材料有限公司 | 一种低模量低吸水光热双固胶及其制备方法 |
DE102018121067A1 (de) | 2018-08-29 | 2020-03-05 | Delo Industrie Klebstoffe Gmbh & Co. Kgaa | Härtbare Zweikomponentenmasse |
EP3950866A4 (en) * | 2019-05-31 | 2023-01-25 | Sekisui Chemical Co., Ltd. | ADHESIVE COMPOSITION, OPTICAL COMPONENT, ELECTRONIC COMPONENT AND ELECTRONIC MODULE |
TW202220154A (zh) * | 2020-11-02 | 2022-05-16 | 南韓商三星電子股份有限公司 | 半導體封裝 |
US11842982B2 (en) | 2020-11-02 | 2023-12-12 | Samsung Electronics Co., Ltd. | Semiconductor package with curing layer between semiconductor chips |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6214460B1 (en) * | 1995-07-10 | 2001-04-10 | 3M Innovative Properties Company | Adhesive compositions and methods of use |
JP2012092312A (ja) * | 2010-09-28 | 2012-05-17 | Sekisui Chem Co Ltd | インクジェット用硬化性組成物及び電子部品の製造方法 |
JP2014237814A (ja) * | 2013-05-09 | 2014-12-18 | 積水化学工業株式会社 | インクジェット用硬化性組成物及びインクジェット塗布装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03192178A (ja) | 1989-12-21 | 1991-08-22 | Nitto Denko Corp | ダイボンディング用接着シート |
JP3184070B2 (ja) | 1995-08-29 | 2001-07-09 | ダイワ精工株式会社 | 樹脂玉を有する細線およびその製造方法 |
JP2008013705A (ja) | 2006-07-07 | 2008-01-24 | Fujifilm Corp | インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法及び平版印刷版 |
US20080090932A1 (en) | 2006-10-11 | 2008-04-17 | Hexion Specialty Chemicals, Inc. | Radiation curable inkjettable adhesive |
JP2010037541A (ja) | 2008-07-10 | 2010-02-18 | Fujifilm Corp | インプリント用硬化性組成物、パターン形成方法およびパターン |
JP5484695B2 (ja) * | 2008-08-06 | 2014-05-07 | 京セラケミカル株式会社 | 接着性樹脂組成物及び接着層の形成方法 |
JP5737185B2 (ja) | 2009-11-13 | 2015-06-17 | 日立化成株式会社 | 半導体装置、半導体装置の製造方法及び接着剤層付き半導体ウェハ |
CN102687256A (zh) | 2009-11-13 | 2012-09-19 | 日立化成工业株式会社 | 膜状粘接剂的制造方法、粘接片和半导体装置及其制造方法 |
WO2011058998A1 (ja) | 2009-11-13 | 2011-05-19 | 日立化成工業株式会社 | 液状半導体用接着剤組成物、半導体装置及び半導体装置の製造方法 |
WO2011058996A1 (ja) | 2009-11-13 | 2011-05-19 | 日立化成工業株式会社 | 接着剤組成物、それを用いた半導体装置及びその製造方法 |
WO2011156060A2 (en) | 2010-06-08 | 2011-12-15 | Henkel Corporation | Dual cure adhesives |
KR101521362B1 (ko) | 2010-09-22 | 2015-05-18 | 세키스이가가쿠 고교가부시키가이샤 | 잉크젯용 경화성 조성물 및 전자 부품의 제조 방법 |
JP2012238819A (ja) | 2011-05-13 | 2012-12-06 | Nitto Denko Corp | 熱伝導性シート、絶縁シートおよび放熱部材 |
JP5996176B2 (ja) | 2011-10-12 | 2016-09-21 | 株式会社Adeka | 耐熱性接着剤 |
JP6085928B2 (ja) * | 2012-09-24 | 2017-03-01 | 日立化成株式会社 | 半導体素子の製造方法、接着剤層付き半導体素子、及び半導体装置 |
CN105073883B (zh) | 2013-03-28 | 2018-04-17 | 三菱化学株式会社 | 层积型半导体装置的层间填充材料用组合物、层积型半导体装置以及层积型半导体装置的制造方法 |
JP2014220372A (ja) * | 2013-05-08 | 2014-11-20 | 積水化学工業株式会社 | 半導体装置の製造方法 |
US9337019B2 (en) | 2013-11-19 | 2016-05-10 | Sekisui Chemical Co., Ltd. | Method for manufacturing electronic component, and electronic component |
WO2016076235A1 (ja) | 2014-11-11 | 2016-05-19 | 旭硝子株式会社 | 粉体塗料用組成物、粉体塗料および塗装物品 |
CN106103633B (zh) | 2014-11-17 | 2023-11-17 | 积水化学工业株式会社 | 喷墨用光及热固化性粘接剂、半导体装置的制造方法及电子部件 |
JP6411184B2 (ja) * | 2014-11-17 | 2018-10-24 | 積水化学工業株式会社 | インクジェット用光及び熱硬化性接着剤、半導体装置の製造方法及び電子部品の製造方法 |
US10259773B2 (en) | 2015-02-12 | 2019-04-16 | Sekisui Chemical Co., Ltd. | Curable composition for inkjet, and method for manufacturing electronic component |
CN108291011B (zh) | 2015-09-09 | 2021-03-02 | 卡本有限公司 | 用于增材制造的环氧双重固化树脂 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6214460B1 (en) * | 1995-07-10 | 2001-04-10 | 3M Innovative Properties Company | Adhesive compositions and methods of use |
JP2012092312A (ja) * | 2010-09-28 | 2012-05-17 | Sekisui Chem Co Ltd | インクジェット用硬化性組成物及び電子部品の製造方法 |
JP2014237814A (ja) * | 2013-05-09 | 2014-12-18 | 積水化学工業株式会社 | インクジェット用硬化性組成物及びインクジェット塗布装置 |
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