CN115206900A - 以增加的良率制造半导体装置模块的方法 - Google Patents

以增加的良率制造半导体装置模块的方法 Download PDF

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CN115206900A
CN115206900A CN202210842644.XA CN202210842644A CN115206900A CN 115206900 A CN115206900 A CN 115206900A CN 202210842644 A CN202210842644 A CN 202210842644A CN 115206900 A CN115206900 A CN 115206900A
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semiconductor die
semiconductor
device module
encapsulant
semiconductor device
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CN115206900B (zh
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A·帕查穆图
C·H·育
何思瑩
J·F·克丁
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本申请涉及以增加的良率制造半导体装置模块的方法。制造半导体装置模块的方法可涉及在牺牲材料中形成孔，且将导电材料放置于所述孔中。可移除所述牺牲材料以暴露所述导电材料的柱。可在移除所述牺牲材料之后将半导体裸片堆叠放置于所述柱中的至少两者之间，所述堆叠的所述半导体裸片中的一者包含作用表面，所述作用表面面向与所述堆叠的所述半导体裸片中的另一者的另一作用表面的方向相反的方向。可将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中。可在至少横向地包封所述柱及所述半导体裸片堆叠之后将所述半导体裸片中的所述一者的接合垫电连接到对应柱。

Description

以增加的良率制造半导体装置模块的方法
分案申请的相关信息
本申请是申请号为201880046997.0、申请日为2018年7月13日、发明名称为“以增加的良率制造半导体装置模块的方法”的中国发明专利申请的分案申请。
优先权主张
本申请案主张2017年7月26日申请的标题为“以增加的良率制造半导体装置模块的方法(Methods of Making Semiconductor Device Modules With Increased Yield)”的序列号为15/660,442的美国专利申请案的申请日期的权益。
技术领域
本发明大体上涉及半导体装置模块及制造半导体装置模块的方法。更明确来说，所揭示实施例涉及可增加良率、减少翘曲且改进可靠性的制造半导体装置模块的方法。
发明内容
在一些实施例中，制造半导体装置模块的方法可涉及在牺牲材料中形成孔，且将导电材料放置于所述孔中。可移除所述牺牲材料以暴露所述导电材料的柱。可在移除所述牺牲材料之后将半导体裸片堆叠放置于所述柱中的至少两者之间，所述堆叠的所述半导体裸片中的一者包含作用表面，所述作用表面面向与所述堆叠的所述半导体裸片中的另一者的另一作用表面的方向相反的方向。可将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中。可在至少横向地包封所述柱及所述半导体裸片堆叠之后将所述半导体裸片中的所述一者的接合垫电连接到对应柱。
在其它实施例中，制造半导体装置模块的方法可涉及在牺牲材料中形成孔，且在所述孔中形成导电材料的柱。可移除所述牺牲材料以暴露所述导电材料的所述柱。可在移除所述牺牲材料之后将半导体裸片堆叠放置于对应柱的相应组之间，每一堆叠包括具有彼此背对的作用表面的两个半导体裸片。可将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中。可将至少所述包封物的材料移除到预定厚度。可在将至少所述包封物的材料移除到所述预定厚度之后将每一堆叠的所述半导体裸片中的一者的接合垫电连接到所述相应组的所述对应柱。
在其它实施例中，半导体装置模块可包含重布层及位于所述重布层上的第一半导体裸片，所述第一半导体裸片的第一作用表面面向所述重布层。第二半导体裸片可位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片。柱可经定位成横向地邻近于所述第一半导体裸片及所述第二半导体裸片，所述柱从所述重布层延伸到至少与所述第二作用表面共面的位置。第一包封物可至少横向地包围所述第一半导体裸片、所述第二半导体裸片及所述柱。电连接器可在所述第一包封物上方从所述柱横向地延伸到所述第二半导体裸片的所述第二作用表面上的接合垫。第二包封物可位于所述电连接器上方。导电凸块可在所述重布层的与所述第一半导体裸片相对的侧上连接到所述重布层。
在其它实施例中，系统可包含经配置以接收输入且生成输出的处理器，及在操作上连接到所述处理器的半导体装置模块。所述半导体装置模块可包含位于重布层上的第一半导体裸片，所述第一半导体裸片的第一作用表面面向所述重布层。第二半导体裸片可位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片。柱可经定位成横向地邻近于所述第一半导体裸片及所述第二半导体裸片，所述柱从所述重布层延伸到至少与所述第二作用表面共面的位置。第一包封物可至少横向地包围所述第一半导体裸片、所述第二半导体裸片及所述柱。电连接器可在所述第一包封物上方从所述柱横向地延伸到所述第二半导体裸片的所述第二作用表面上的接合垫。第二包封物可位于所述电连接器上方。导电凸块可在所述重布层的与所述第一半导体裸片相对的侧上连接到所述重布层，所述导电凸块将所述半导体装置模块在操作上连接到所述处理器。
附图说明
虽然本发明以特别地指出且清楚地主张特定实施例的权利要求书结束，但可容易在结合附图阅读时从以下描述确定在本发明的范围内的实施例的各种特征及优点，附图中：
图1是在制造半导体装置模块的工艺的第一阶段中的第一中间产品的横截面侧视图；
图2是在制造半导体装置模块的工艺的第二阶段中的第二中间产品的横截面侧视图；
图3是在制造半导体装置模块的工艺的第三阶段中的第三中间产品的横截面侧视图；
图4是在制造半导体装置模块的工艺的第四阶段中的第四中间产品的横截面侧视图；
图5是在制造半导体装置模块的工艺的第五阶段中的第五中间产品的横截面侧视图；
图6是在制造半导体装置模块的工艺的第六阶段中的第六中间产品的横截面侧视图；
图7是在制造半导体装置模块的工艺的第七阶段中的第七中间产品的横截面侧视图；
图8是在制造半导体装置模块的工艺的第八阶段中的第八中间产品的横截面侧视图；
图9是在制造半导体装置模块的工艺的第九阶段中的第九中间产品的横截面侧视图；
图10是在制造半导体装置模块的工艺的第十阶段中的第十中间产品的横截面侧视图；
图11是由图1到10的工艺形成的半导体装置模块的横截面侧视图；
图12是在制造如图11中所描绘的半导体装置模块的工艺的另一实施例的第一阶段中的第一中间产品的横截面侧视图；
图13是在制造半导体装置模块的工艺的另一实施例的第二阶段中的第二中间产品的横截面侧视图；
图14是在制造半导体装置模块的工艺的另一实施例的第三阶段中的第三中间产品的横截面侧视图；
图15是在制造半导体装置模块的工艺的另一实施例的第四阶段中的第四中间产品的横截面侧视图；
图16是在制造半导体装置模块的工艺的另一实施例的第五阶段中的第五中间产品的横截面侧视图；
图17是在制造半导体装置模块的工艺的另一实施例的第六阶段中的第六中间产品的横截面侧视图；
图18是在制造半导体装置模块的工艺的另一实施例的第七阶段中的第七中间产品的横截面侧视图；
图19是在制造半导体装置模块的工艺的另一实施例的第八阶段中的第八中间产品的横截面侧视图；
图20是在制造半导体装置模块的工艺的另一实施例的第九阶段中的第九中间产品的横截面侧视图；及
图21是根据本发明的包含半导体装置模块的系统的示意性框图。
具体实施方式
本发明中所呈现的图示并不意味为任何特定半导体装置、半导体装置模块、其组件或制造半导体装置模块的工艺中的动作的实际视图，而是仅为用以描述说明性实施例的理想化表示。因此，附图不一定按比例绘制。
所揭示实施例大体上涉及可增加良率、减少翘曲且改进模块可靠性的制造半导体装置模块的方法。更明确来说，本发明揭示制造半导体装置模块的方法的实施例，其可涉及形成导电柱，随后将其暴露并连接到半导体装置。
参考图1，展示在制造半导体装置模块的工艺的第一阶段中的第一中间产品100的横截面侧视图。可通过将牺牲材料102暂时固定到支撑衬底104而形成第一中间产品100。牺牲材料102可具有例如至少大致均匀厚度T，如在垂直于支撑衬底104的被暂时固定有牺牲材料102的上表面106的方向上所测量。牺牲材料102可包含例如电介质材料。更明确来说，牺牲材料102可包含光致抗蚀剂材料。作为特定非限制性实例，牺牲材料102可包括光敏材料，所述光敏材料包含例如重氮萘醌及酚醛树脂(例如酚醛清漆树脂)。
支撑衬底104可经设计大小且经塑形以在结构上强化牺牲材料102。支撑衬底104可包含例如具有足够刚性的材料以支撑上覆牺牲材料102。更明确来说，支撑衬底104可包含例如半导体材料或陶瓷材料。作为特定非限制性实例，支撑衬底104可包含玻璃材料。
牺牲材料102可通过暂时接合材料108固定到支撑衬底104。暂时接合材料108可包含至少第一材料110，第一材料110经配置以将牺牲材料102暂时固定到支撑衬底104。第一材料110可包含例如聚合物材料。更明确来说，第一材料110可包含例如粘合剂材料。作为特定非限制性实例，第一材料110可包含例如紫外光可固化或热可固化粘合剂材料。暂时接合材料108的第一材料110可插入于牺牲材料102与支撑衬底104之间。举例来说，第一材料110可与支撑衬底104的面向牺牲材料102的上表面106直接接触。
在一些实施例(例如图1中所展示的实施例)中，暂时接合材料108可进一步包含第二材料112，第二材料112经配置以暂时固定将要在形成半导体装置模块的工艺期间形成的另一导电材料结构。第二材料112可包含例如经配置以与导电材料接合的材料。更明确来说，第二材料112可包含例如氧化物、无机材料、金属或金属合金材料。作为特定非限制性实例，第二材料112可包含氧化硅、碳化物、铝、铝合金、铜、铜合金、金、金合金、银、银合金、锡或锡合金。第二材料112可与牺牲材料102的面向支撑衬底104的下表面114直接接触。举例来说，第二材料112可插入于第一材料110与牺牲材料102之间，如图1中所展示，或可混杂在整个第一材料110中。
可通过例如将暂时接合材料108放置于支撑衬底104的上表面106上并在预形成且已经放置的暂时接合材料108上形成牺牲材料102来形成中间产品100。作为另一实例，可通过在支撑衬底104的上表面106上形成暂时接合材料108且将牺牲材料102的预形成的块体的下表面114放置成与暂时接合材料108接触来形成中间产品100。
中间产品100可为可缩放的。举例来说，中间产品100可起始用于形成单半导体装置模块、成行的多个半导体装置模块或成阵列的多个半导体装置模块的工艺。
图2是在制造半导体装置模块的工艺的第二阶段中的第二中间产品116的横截面侧视图。在第二阶段期间，可在牺牲材料102中形成孔118。孔118可从牺牲材料102的上表面120穿过牺牲材料102延伸到至少牺牲材料102的下表面114。孔118可定位于预定位置中，例如呈预定图案。
每一孔118的高度H可例如在约10微米与约200微米之间。更明确来说，每一孔118的高度H可例如在约50微米与约200微米之间。作为特定非限制性实例，每一孔118的高度H可例如在约100微米与约200微米之间(例如约150微米)。每一孔118的宽度W可例如在约10微米与约90微米之间。更明确来说，每一孔118的宽度W可例如在约20微米与约50微米之间。
可通过例如将掩模施加到牺牲材料102的上表面120并通过暴露于预定波长的光(例如紫外光)或通过蚀刻而从牺牲材料102的未由掩模覆盖的暴露部分移除材料来形成孔118。作为额外实例，可通过钻孔(例如激光钻孔)或经由暴露于溶剂来形成孔118。
图3是在制造半导体装置模块的工艺的第三阶段中的第三中间产品122的横截面侧视图。在第三阶段期间，可将例如铜的导电材料124放置于孔118中。举例来说，导电材料124可填充孔118，使得导电材料124可接触暂时接合材料108，且导电材料124的上表面126可与牺牲材料102的上表面120至少大致齐平。
在暂时接合材料108包含第二材料112的实施例中，导电材料124可接触且暂时固定到至少暂时接合材料108的第二材料112。举例来说，导电材料124可与第二材料112接合。
可通过例如电镀、无电式镀覆、溅镀或其它工艺而将导电材料124定位于孔118中。将导电材料124定位于孔118中可发生在已形成意欲存在于半导体装置模块中的任何电连接之前，这可减小将导电材料124定位于孔118中的条件将削弱、损坏或断开此类连接的可能性。因此，较大数量的所得半导体装置模块可为可操作的，从而增加良率。
图4是在制造半导体装置模块的工艺的第四阶段中的第四中间产品128的横截面侧视图。在第四阶段期间，可移除牺牲材料102，从而暴露导电材料124的柱130。可通过例如剥离、将牺牲材料102暴露于溶剂、将牺牲材料102暴露于预定波长的光(例如紫外光)或将牺牲材料102暴露于热而移除牺牲材料102。剩余柱130可由暂时接合材料108固持于适当位置。
图5是在制造半导体装置模块的工艺的第五阶段中的第五中间产品132的横截面侧视图。在第五阶段期间，可将半导体裸片136及138的堆叠134放置于柱130中的至少两者之间。举例来说，可将半导体裸片136及138的堆叠134放置于柱130的两个相应组中的每一者之间。如图5中所展示，给定半导体装置模块可包含半导体裸片136及138的多个堆叠134。举例来说，每一半导体装置模块最终可包含半导体裸片136及138的两个、四个、六个或八个堆叠134。
每一堆叠134可包含至少两个半导体裸片136及138。举例来说，每一堆叠134可包含经定位成靠近支撑衬底104的第一半导体裸片136，及位于第一半导体裸片136的与支撑衬底104相对的侧上的第二半导体裸片138。第一半导体裸片136的第一作用表面140可面向支撑衬底104且与暂时接合材料108接触。第二半导体裸片138的第二作用表面142可面向与第一作用表面140面向的方向相反的方向。举例来说，第二半导体裸片138的第二作用表面142可位于第二半导体裸片138的与第一半导体裸片136相对的侧上。第一半导体裸片136可由接合材料145固定到第二半导体裸片138，接合材料145位于第一半导体裸片136与第二半导体裸片138之间。更明确来说，接合材料145可例如位于第一半导体裸片136的第一非作用表面141与第二半导体裸片138的第二非作用表面143之间且与其直接接触。第一作用表面140及第二作用表面142中的每一者可包含经配置以形成电连接及操作连接的接合垫144。第一半导体裸片136的第一作用表面140及第二半导体裸片138的第二作用表面142可包含嵌入于其中的集成电路，所述集成电路电连接到且在操作上连接到接合垫144。举例来说，第一半导体裸片136、第二半导体裸片138或第一半导体裸片136及第二半导体裸片138两者可被配置为逻辑芯片或存储器芯片。
可使用例如所属领域中所知的取放操作来执行对半导体裸片136及138的堆叠134的放置。
图6是在制造半导体装置模块的工艺的第六阶段中的第六中间产品146的横截面侧视图。在第六阶段期间，可通过例如包覆模制而将柱130以及半导体裸片136及138的堆叠134至少横向地包封于包封物148中。举例来说，包封物148可完全覆盖至少第一半导体裸片136的第一侧表面150、第二半导体裸片138的第二侧表面152及每一柱130的侧表面154。在一些实施例中，包封物148可进一步在第二半导体裸片138的第二作用表面142、一或多个柱130的上表面126或两者上方延伸。包封物148可包含例如电介质材料。更明确来说，包封物148可包含经固化聚合物材料。包封物148可在结构上支撑半导体裸片136及138的堆叠134以及柱130，并将其固定于适当位置。
图7是在制造半导体装置模块的工艺的第七阶段中的第七中间产品156的横截面侧视图。在第七阶段期间，可移除至少包封物148的材料以使包封物148与每一第二半导体裸片138的接合垫及每一柱130的上表面126齐平。举例来说，可在至少大致垂直于第二半导体裸片138的第二作用表面142的方向上移除包封物148的材料。在一些实施例中，可在第七阶段期间移除柱130中的一或多者的导电材料124以使每一柱130的上表面126与第二半导体裸片138的接合垫144齐平。在一些实施例中，可在第七阶段期间移除接合垫144中的一或多者的材料以使接合垫144与柱130的上表面126以及包封物148齐平。举例来说，接合垫144的材料最初可从第二半导体裸片138的第二作用表面142突出，且移除可使其更靠近第二作用表面142或与第二作用表面142齐平。可通过例如磨除(grinding away)相关材料而完成移除。
图8是在制造半导体装置模块的工艺的第八阶段中的第八中间产品158的横截面侧视图。在第八阶段期间，可将每一第二半导体裸片138的接合垫144电连接到对应柱130。举例来说，可形成电连接器160，其各自在包封物148的中介部分上方从其对应柱130延伸到相应接合垫144。可通过例如放置或形成从柱130延伸到其相应接合垫144的导电迹线而形成电连接器160。电连接器160可包含例如金属或金属合金材料。
与将类似配置的半导体裸片电连接到下层结构的常规方法相比，经由柱130及电连接器160电连接第二半导体裸片138可更廉价且更可靠。举例来说，硅穿孔的形成及线接合的形成中的每一者花费更多时间且耗费更多资源，而未产生显著低于本文中所揭示的方法的故障率。因此，所揭示方法可节省时间且节约资源，同时维持或改进电连接的可靠性，从而增加良率。
在一些实施例中，电介质保护材料162，其还可被特性化为钝化材料，可放置于至少电连接器160上方。举例来说，保护材料162可从位于包封物148上方的经定位成横向地邻近于在最终将形成给定半导体装置模块之物的外围处的柱130的位置、在柱130及其相关联电连接器160上方、在第二半导体裸片138的第二作用表面142上方、在另一电连接器160及相关联柱130上方延伸到包封物148的经定位成横向地邻近于另一柱130的至少另一部分。更明确来说，保护材料162可从位于包封物148上方的经定位成横向地邻近于在最终将形成给定半导体装置模块之物的外围处的柱130的位置、在柱130及其相关联电连接器160上方、在要包含于半导体装置模块中的半导体裸片136及138的每一堆叠134上方、在最终将形成给定半导体装置模块之物的相对外围处的另一电连接器160及相关联柱130上方延伸到包封物148的经定位成邻近于在最终将形成给定半导体装置模块之物的与保护材料162开始之处相对的侧上的另一柱130的至少另一部分。保护材料162可包含例如聚合物材料。
图9是在制造半导体装置模块的工艺的第九阶段中的第九中间产品164的横截面侧视图。在第九阶段期间，可将另一包封物166定位于半导体裸片136及138的堆叠134上方。举例来说，可将另一包封物166放置于第八中间产品158(参见图8)的整个暴露上部分上方，使得另一包封物166可覆盖第一包封物148、柱130及相关联电连接器160、接合垫144以及半导体裸片136及138的堆叠134，以及任选的保护材料162。在包含保护材料162的实施例中，另一包封物166可与第一包封物148及保护材料162直接接触。在缺乏保护材料162的实施例中，另一包封物166可与第一包封物148、电连接器160及任选地为柱130、接合垫144与第二半导体裸片138的第二作用表面142的任何组合的部分直接接触。另一包封物166可包含例如电介质材料。更明确来说，另一包封物166可包含例如经固化聚合物材料。另一包封物166可为与第一包封物148相同的材料或不同的材料。
在放置另一包封物166之后，第九阶段可进一步涉及从第一半导体裸片136的第一作用表面140下方移除支撑衬底104(参见图8)。举例来说，可削弱或移除暂时接合材料108(参见图8)，且可使支撑衬底104(参见图8)位移以将支撑衬底104(参见图8)从第一半导体裸片136的第一作用表面140以及其它剩余组件卸离。更明确来说，可通过暴露于例如热、光(例如紫外光)或溶剂而削弱或移除暂时接合材料108(参见图8)，且可使支撑衬底104(参见图8)横向地位移以将支撑衬底104(参见图8)从第一半导体裸片136的第一作用表面140以及其它剩余组件卸离。
另外，第九阶段可涉及将另一支撑衬底168在另一包封物166的与半导体裸片136及138的堆叠134相对的侧上固定到另一包封物166。举例来说，可在另一包封物166的与保护材料162相对的侧上将另一暂时接合材料170定位于另一包封物166上方，且可将另一支撑衬底168定位成与另一暂时接合材料170接触以将另一支撑衬底168固定到另一包封物166。另一支撑衬底168及另一暂时接合材料170可选自先前结合第一支撑衬底104及暂时接合材料108所描述的材料，且可包含与用于第一支撑衬底104及暂时接合材料108的实际材料相同的材料或不同的材料。接着可倒转由另一支撑衬底168支撑的组合件以进行进一步处理。
图10是在制造半导体装置模块的工艺的第十阶段中的第十中间产品172的横截面侧视图。在第十阶段期间，可将重布层174形成为邻近于第一半导体裸片136的第一作用表面140。重布层174可经配置以将信号路由到堆叠134的半导体裸片136及138且从堆叠134的半导体裸片136及138路由信号。举例来说，重布层174可包含与第一半导体裸片136的第一作用表面140上的接合垫144电连通的接触件176，及与柱130电连通的其它接触件178，这可通过电连接器160将接触件178放置成与第二半导体裸片138的第二作用表面142上的接合垫144电连通。路由连接器180可从接触件176及178延伸到位于重布层174的与半导体裸片136及138的堆叠134相对的侧上的接合垫182以用于输出。通过将导电材料及电介质材料的块体选择性地按顺序放置于图9的倒转的组合件上，或通过添加预形成的重布层174，可形成重布层174，如所属领域中所知。
也在第十阶段期间，可将导电材料凸块184放置于接合垫182上，以使半导体裸片136及138的堆叠134能够在操作上连接到另一装置或结构，例如较高层级封装。举例来说，凸块184可被配置为球、柱、支柱、圆柱(column)、立柱、金属小块，或固定到接合垫182的其它导电材料块体。作为特定非限制性实例，凸块184可包括焊料球的球栅阵列。
图11是由图1到10的工艺形成的半导体装置模块186的横截面侧视图。作为第十阶段中的最终动作，可通过执行先前结合第一支撑衬底104(参见图8)的移除所描述的适用于另一支撑衬底168(参见图10)及其相关联另一暂时接合材料170的任何动作来移除另一支撑衬底168。
所得半导体装置模块186可包含重布层174，重布层174包含在重布层174的第一侧上电连接到导电材料凸块184的接合垫182，及在重布层的第二相对侧上的导电材料接触件176及178。导电材料凸块184可固定到接合垫182。接触件176的第一组可固定到半导体装置模块186中的半导体裸片136及138的每一堆叠134的第一半导体裸片136的接合垫144。接触件178的第二组可固定到柱130，柱130至少部分地延伸穿过横向地包围半导体裸片136及138的堆叠134的包封物148，柱130在至少大致垂直于第一半导体裸片136的第一作用表面140的方向上延伸。相应柱130可经由在包封物148上方横向地延伸的电连接器160电连接到堆叠134的第二半导体裸片138的接合垫144。第二半导体裸片138的第二作用表面142可面向与第一作用表面140面向的方向相反的方向。电连接器160可由保护材料162覆盖，保护材料162又可由另一包封物166覆盖。可通过使凸块184接触对应接合垫且回焊凸块184以形成电连接而将半导体装置模块186在操作上连接到另一装置。
图12是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第一阶段中的第一中间产品188的横截面侧视图。在此实施例中，可在引入重布层174之后添加半导体裸片136及138的堆叠134，而非如图5到10所展示那样在放置半导体裸片136及138的堆叠134之后引入重布层174。在第一阶段期间，可将重布层174固定到支撑衬底104。举例来说，可将预形成的重布层174放置成与支撑衬底104上的暂时接合材料108接触，或可通过将导电材料(通过施加及图案化金属层)及电介质材料(通过施加及图案化以形成孔径)选择性地按顺序定位于支撑衬底104上方的接合材料108上而在接合材料108上形成重布层174。重布层174可包含在重布层174的面向支撑衬底104的第一侧上的预定位置中的接合垫182，及在重布层174的第二相对侧上的预定位置中的接触件176及178。路由连接器180可在接触件176及178之间延伸且将接触件176及178电连接到接合垫182。
图13是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第二阶段中的第二中间产品190的横截面侧视图。在第二阶段期间，可将牺牲材料102在重布层174的与支撑衬底104相对的侧上定位于重布层174上，这可通过执行先前结合图1所描述的适用于图13中所展示的重布层174的动作而完成。举例来说，牺牲材料102可覆盖重布层174的上表面且与接触件176及178直接接触。
图14是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第三阶段中的第三中间产品192的横截面侧视图。在第三阶段期间，可在牺牲材料102中形成孔118。可将孔118与经配置以连接到第二半导体裸片138(参见图11)的接触件178对准，使得形成孔118可暴露接触件178。可通过执行先前结合图2所描述的适用于图14中所展示的定位及配置的任何动作而完成孔118的形成。
图15是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第四阶段中的第四中间产品194的横截面侧视图。在第四阶段期间，可将导电材料124放置于孔118中。在将导电材料124放置于孔118中时，导电材料124可固定到在孔118的底部处暴露的接触件178且与其形成电连接。可通过执行先前结合图3所描述的适用于图15中所展示的定位及配置的任何动作而将导电材料124放置于孔118中。
图16是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第五阶段中的第五中间产品196的横截面侧视图。在第五阶段期间，可移除牺牲材料102，从而暴露导电材料124的柱130。移除牺牲材料102还可暴露重布层174的未由柱130覆盖且横向地位于柱130的组之间的接触件176。可通过执行先前结合图4所描述的适用于图16中所展示的配置的任何动作而完成牺牲材料102的移除。
图17是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第六阶段中的第六中间产品198的横截面侧视图。在第六阶段期间，可将半导体裸片136及138的堆叠134放置于重布层174的接触件176上的柱130的相应组之间。更明确来说，可将每一堆叠134的第一半导体裸片136的接合垫144与重布层174的对应接触件176对准，可使接合垫144及接触件176彼此接触，且可通过将接合垫144固定到接触件176(例如通过引入焊料材料或通过使接合垫144、接触件176或两者的导电材料流动)而将第一半导体裸片136机械连接到且电连接到重布层174。可通过执行先前结合图5所描述的适用于图17的结构及定位的任何动作而完成堆叠134相对于重布层174的定位。通过在形成重布层174之后放置半导体裸片136及138的堆叠134(例如采取“芯片最后”方法)，方法可能够测试、组装及使用仅已知为含有可操作半导体裸片136及138的那些堆叠134。此外，此类方法论可减小半导体裸片136及138的电连接经历损坏或失效的可能性，这是因为在引入堆叠134之前已发生较大比例的工艺动作。
图18是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第七阶段中的第七中间产品200的横截面侧视图。在第七阶段期间，可将半导体裸片136及138的堆叠134以及柱130至少横向地包封于包封物148中。另外，可例如通过研磨到最终厚度而移除包封物148的部分及任选地为柱130中的一或多者以及第二半导体裸片138的接合垫144的部分。可通过执行先前结合图6及7所描述的适用于图18的结构的任何动作而完成包封及材料移除。
图19是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第八阶段中的第八中间产品202的横截面侧视图。在第八阶段期间，可通过形成在包封物148上方从给定柱130延伸到接合垫144的相应电连接器160而将柱130电连接到对应堆叠134的第二半导体裸片138的接合垫144。在一些实施例中，电连接器160可由保护材料162覆盖。可通过执行先前结合图8所描述的适用于图19的结构的任何动作而放置电连接器160且添加保护材料162。
图20是在制造半导体装置模块186(参见图11)的工艺的另一实施例的第九阶段中的第九中间产品204的横截面侧视图。在第九阶段期间，可将另一包封物166放置于任选的保护材料162上方及电连接器160上方。可通过执行先前结合图9所描述的适用于图20的结构的任何动作而放置另一包封物166。为形成半导体装置模块186(参见图11)，可通过以下操作而移除支撑衬底104：执行先前结合图9所描述的适用于图20的结构的任何动作；及将导电材料凸块184放置于重布层174的接合垫182上，这可通过执行先前结合图10所描述的适用于图20的结构的任何动作而完成。
图21是根据本发明的包含半导体装置模块206的系统214的示意性框图。系统214包含处理器208，处理器208与一或多个半导体装置模块206(例如一或多个存储器模块)、一或多个输入装置210及一或多个输出装置212电耦合。系统214可为消费性电子装置，例如桌上型计算机、膝上型计算机、平板计算机、电子阅读器、智能电话或其它类型的通信装置，以及并入有半导体装置模块的任何类型的计算系统。半导体装置模块206可包含存储器装置(例如第一半导体裸片装置136及第二半导体裸片装置138中的一或多者)，如上文所论述。
根据本发明的半导体装置模块可实现对其并入到其中的系统的高度及宽度的更好控制。另外，此类半导体装置模块可减少工艺变化。根据本发明的半导体装置模块可进一步减少或消除形成硅穿孔及线接合以跨半导体装置形成电连接的必要性。此外，本文中所描述的柱可增加处理量且维持硅穿孔及线接合的更好信号质量。最终，所述模块可通过为生成所述模块所需的处理及在将完整模块与系统集成之前测试完整模块的能力两者实现更好质量控制。
作为说明性总结，制造半导体装置模块的方法可涉及在牺牲材料中形成孔，且将导电材料放置于所述孔中。可移除所述牺牲材料以暴露所述导电材料的柱。可在移除所述牺牲材料之后将半导体裸片堆叠放置于所述柱中的至少两者之间，所述堆叠的所述半导体裸片中的一者包含作用表面，所述作用表面面向与所述堆叠的所述半导体裸片中的另一者的另一作用表面的方向相反的方向。可将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中。可在至少横向地包封所述柱及所述半导体裸片堆叠之后将所述半导体裸片中的所述一者的接合垫电连接到对应柱。
作为另一说明性总结，制造半导体装置模块的方法可涉及在牺牲材料中形成孔，且在所述孔中形成导电材料的柱。可移除所述牺牲材料以暴露所述导电材料的所述柱。可在移除所述牺牲材料之后将半导体裸片堆叠放置于对应柱的相应组之间，每一堆叠包括具有彼此背对的作用表面的两个半导体裸片。可将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中。可将至少所述包封物的材料移除到预定厚度。可在将至少所述包封物的材料移除到所述预定厚度之后将每一堆叠的所述半导体裸片中的一者的接合垫电连接到所述相应组的所述对应柱。
作为又一说明性总结，半导体装置模块可包含重布层及位于所述重布层上的第一半导体裸片，所述第一半导体裸片的第一作用表面面向所述重布层。第二半导体裸片可位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片。柱可经定位成横向地邻近于所述第一半导体裸片及所述第二半导体裸片，所述柱从所述重布层延伸到至少与所述第二作用表面共面的位置。第一包封物可至少横向地包围所述第一半导体裸片、所述第二半导体裸片及所述柱。电连接器可在所述第一包封物上方从所述柱横向地延伸到所述第二半导体裸片的所述第二作用表面上的接合垫。第二包封物可位于所述电连接器上方。导电凸块可在所述重布层的与所述第一半导体裸片相对的侧上连接到所述重布层。
作为又一说明性总结，系统可包含经配置以接收输入且生成输出的处理器，及在操作上连接到所述处理器的半导体装置模块。所述半导体装置模块可包含位于重布层上的第一半导体裸片，所述第一半导体裸片的第一作用表面面向所述重布层。第二半导体裸片可位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片。柱可经定位成横向地邻近于所述第一半导体裸片及所述第二半导体裸片，所述柱从所述重布层延伸到至少与所述第二作用表面共面的位置。第一包封物可至少横向地包围所述第一半导体裸片、所述第二半导体裸片及所述柱。电连接器可在所述第一包封物上方从所述柱横向地延伸到所述第二半导体裸片的所述第二作用表面上的接合垫。第二包封物可位于所述电连接器上方。导电凸块可在所述重布层的与所述第一半导体裸片相对的侧上连接到所述重布层，所述导电凸块将所述半导体装置模块在操作上连接到所述处理器。
虽然已结合图描述某些说明性实施例，但所属领域的技术人员将认识到且明白，本发明的范围不限于本发明中所明确展示及描述的那些实施例。更确切地说，可对本发明中所描述的实施例进行许多添加、删除及修改而产生在本发明的范围内的实施例，例如明确主张的实施例，包含合法等效物。另外，来自一个所揭示实施例的特征可与另一所揭示实施例的特征组合，同时仍在如发明人所预期的本发明的范围内。

Claims (20)

1.一种半导体装置模块，其包括：
第一半导体裸片，其位于重布层上并且可操作地耦合到所述重布层，所述第一半导体裸片的第一作用表面面向所述重布层；
第二半导体裸片，其位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片；
柱，其经定位以横向邻近所述第一半导体裸片和所述第二半导体裸片，所述柱从所述重布层延伸；
第一包封物，其至少横向围绕所述第一半导体裸片、所述第二半导体裸片和所述柱，所述第一包封物在所述第二半导体裸片的与所述第一半导体裸片相对的一侧上的所述第二作用表面上方延伸；
电连接器，其在所述第一包封物上方从所述柱横向延伸到所述第二半导体裸片的所述第二作用表面上的接合垫，所述柱可操作地将所述第二半导体裸片耦合到所述重布层；
保护材料，其覆盖所述电连接器；
第二包封物，其位于所述保护材料和所述电连接器上方，所述第二包封物与所述第一包封物和所述保护材料直接接触；和
导电凸块，其在所述重布层的与所述第一半导体裸片相对的一侧上连接到所述重布层。
2.根据权利要求1所述的半导体装置模块，其中，所述第一包封物横向地置于所述柱与所述第一半导体裸片之间和所述柱与所述第二半导体裸片之间。
3.根据权利要求1所述的半导体装置模块，其中，所述接合垫位于靠近所述第二半导体裸片的横向侧的所述第二作用表面上。
4.根据权利要求1所述的半导体装置模块，其中所述电连接器进一步横向延伸超过所述第二作用表面上方的所述接合垫。
5.根据权利要求1所述的半导体装置模块，其中，所述电连接器包括导电迹线。
6.根据权利要求1所述的半导体装置模块，其中，所述保护材料从位于所述第一包封物上方的横向地邻近于所述半导体装置模块的外围处的柱的位置、在所述柱及其相关联电连接器上方、在所述第二半导体裸片的所述第二作用表面上方、在另一电连接器及相关联柱上方延伸到所述第一包封物的横向邻近于另一柱的至少另一部分。
7.根据权利要求1所述的半导体装置模块，其中，所述保护材料包括聚合物材料。
8.根据权利要求1所述的半导体装置模块，其中，所述柱的直径在大约20微米和大约50微米之间。
9.根据权利要求1所述的半导体装置模块，其进一步包括接合材料，所述接合材料置于所述第一半导体裸片和所述第二半导体裸片之间并且将所述第一半导体裸片固定到所述第二半导体裸片。
10.根据权利要求9所述的半导体装置模块，其中，所述接合材料与所述第一半导体裸片的第一非作用表面和所述第二半导体裸片的第二非作用表面接触。
11.根据权利要求1所述的半导体装置模块，其中，所述半导体装置模块没有硅穿孔和线接合。
12.根据权利要求1所述的半导体装置模块，其中，所述第一半导体裸片不电连接到所述第二半导体裸片。
13.根据权利要求1所述的半导体装置模块，其中，所述第一半导体裸片或所述第二半导体裸片中的至少一个被配置为存储器芯片。
14.一种系统，包括：
处理器，其被配置为接收输入并产生输出；和
半导体装置模块，其可操作地连接到所述处理器，所述半导体装置模块包括：
第一半导体裸片；
第二半导体裸片，其位于所述第一半导体裸片上，所述第二半导体裸片的第二作用表面背对所述第一半导体裸片的第一作用表面；
柱，其经定位以横向邻近所述第一半导体裸片和所述第二半导体裸片；
重布层，其可操作地耦合到所述第一作用表面和所述柱，所述柱从所述重布层延伸；
第一包封物，其至少横向围绕所述第一半导体裸片、所述第二半导体裸片和所述柱，所述第一包封物在所述第二半导体裸片的与所述第一半导体裸片相对的一侧上的所述第二作用表面上方延伸；
电连接器，其在所述第一包封物上方从所述柱横向延伸到所述第二半导体裸片的所述第二作用表面上的接合垫；
保护材料，其覆盖所述电连接器；
第二包封物，其位于所述保护材料和所述电连接器上方，所述第二包封物与所述第一包封物和所述保护材料直接接触；和
导电凸块，其在所述重布层的与所述第一半导体裸片相对的一侧上连接到所述重布层，所述导电凸块可操作性地将所述半导体装置模块连接到所述处理器。
15.根据权利要求14所述的系统，其中，所述第一包封物横向地置于所述柱与所述第一半导体裸片之间和所述柱与所述第二半导体裸片之间。
16.根据权利要求14所述的系统，其中，所述接合垫位于靠近所述第二半导体裸片的横向外围的所述第二作用表面上。
17.根据权利要求14所述的系统，其中所述电连接器进一步横向延伸超过所述第二作用表面上方的所述接合垫。
18.根据权利要求14所述的系统，其中，所述电连接器包括导电迹线。
19.根据权利要求14所述的系统，其中，所述保护材料从位于所述第一包封物上方的横向地邻近于所述半导体装置模块的外围处的柱的位置、在所述柱及其相关联电连接器上方、在所述第二半导体裸片的所述第二作用表面上方、在另一电连接器及相关联柱上方延伸到所述第一包封物的横向邻近于所述其它柱的至少另一部分。
20.一种制造半导体装置模块的方法，其包括：
在牺牲材料中形成孔；
将导电材料放置于所述孔中；
移除所述牺牲材料以暴露所述导电材料的柱；
在移除所述牺牲材料之后将半导体裸片堆叠放置于所述柱中的至少两者之间，所述堆叠的所述半导体裸片中的一个半导体裸片包含作用表面，所述作用表面面向与所述堆叠的所述半导体裸片中的另一半导体裸片的另一作用表面的方向相反的方向；
将所述柱及所述半导体裸片堆叠至少横向地包封于包封物中；
移除所述包封物的一部分以使所述包封物与所述堆叠的所述半导体裸片中的所述另一半导体裸片的接合垫以及每个柱的上表面齐平，将所述包封物的另一部分留在所述另一半导体裸片的与所述一个半导体裸片相对的一侧上的作用表面上；和
在至少横向地包封所述柱及所述半导体裸片堆叠之后，将所述半导体裸片中的所述一个半导体裸片的接合垫电连接到对应柱。
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