US20190035755A1 - Methods of making semiconductor device modules with increased yield - Google Patents
Methods of making semiconductor device modules with increased yield Download PDFInfo
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- US20190035755A1 US20190035755A1 US15/660,442 US201715660442A US2019035755A1 US 20190035755 A1 US20190035755 A1 US 20190035755A1 US 201715660442 A US201715660442 A US 201715660442A US 2019035755 A1 US2019035755 A1 US 2019035755A1
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Definitions
- FIG. 5 is a cross-sectional side view of a fifth intermediate product in a fifth stage of the process of making the semiconductor device module
- FIG. 8 is a cross-sectional side view of an eighth intermediate product in an eighth stage of the process of making the semiconductor device module
- FIG. 10 is a cross-sectional side view of a tenth intermediate product in a tenth stage of the process of making the semiconductor device module;
- FIG. 11 is a cross-sectional side view of the semiconductor device module formed by the process of FIGS. 1 through 10 ;
- FIG. 13 is a cross-sectional side view of a second intermediate product in a second stage of the other embodiment of the process of making the semiconductor device module;
- FIG. 14 is a cross-sectional side view of a third intermediate product in a third stage of the other embodiment of the process of making the semiconductor device module;
- FIG. 16 is a cross-sectional side view of a fifth intermediate product in a fifth stage of the other embodiment of the process of making the semiconductor device module;
- FIG. 17 is a cross-sectional side view of a sixth intermediate product in a sixth stage of the other embodiment of the process of making the semiconductor device module;
- FIG. 20 is a cross-sectional side view of a ninth intermediate product in a ninth stage of the other embodiment of the process of making the semiconductor device module.
- the first intermediate product 100 may be formed by temporarily securing a sacrificial material 102 to a support substrate 104 .
- the sacrificial material 102 may be, for example, of an at least substantially uniform thickness T as measured in a direction perpendicular to an upper surface 106 of the support substrate 104 to which the sacrificial material 102 is temporarily secured.
- the sacrificial material 102 may include, for example, a dielectric material. More specifically, the sacrificial material 102 may include a photoresist material.
- the sacrificial material 102 may comprise a photosensitive material including, for example, diazonaphthoquinone and a phenol formaldehyde resin (e.g., novolac resin).
- the sacrificial material 102 may be secured to the support substrate 104 by a temporary bonding material 108 .
- the temporary bonding material 108 may include at least a first material 110 configured to temporarily secure the sacrificial material 102 to the support substrate 104 .
- the first material 110 may include, for example, a polymeric material. More specifically, the first material 110 may include, for example, an adhesive material. As a specific, nonlimiting example, the first material 110 may include, for example, an ultraviolet-light-curable or a heat-curable adhesive material.
- the first material 110 of the temporary bonding material 108 may be interposed between the sacrificial material 102 and the support substrate 104 . For example, the first material 110 may be in direct contact with the upper surface 106 of the support substrate 104 facing the sacrificial material 102 .
- the temporary bonding material 108 may further include a second material 112 configured to temporarily secure another structure of electrically conductive material to be formed during the process of forming a semiconductor device module.
- the second material 112 may include, for example, a material configured to bond with an electrically conductive material. More specifically, the second material 112 may include, for example, an oxide, an inorganic material, a metal or metal alloy material. As specific, nonlimiting examples, the second material 112 may include silicon oxide, a carbide, aluminum, an aluminum alloy, copper, a copper alloy, gold, a gold alloy, silver, a silver alloy, tin, or a tin alloy.
- the intermediate product 100 may be formed by, for example, placing the temporary bonding material 108 on the upper surface 106 of the support substrate 104 and forming the sacrificial material 102 on the preformed and already-placed temporary bonding material 108 .
- the intermediate product 100 may be formed by forming the temporary bonding material 108 on the upper surface 106 of the support substrate 104 and placing the lower surface 114 of a preformed mass of the sacrificial material 102 in contact with the temporary bonding material 108 .
- FIG. 2 is a cross-sectional side view of a second intermediate product 116 in a second stage of the process of making the semiconductor device module.
- holes 118 may be formed in the sacrificial material 102 .
- the holes 118 may extend from an upper surface 120 of the sacrificial material 102 , through the sacrificial material 102 , to at least the lower surface 114 of the sacrificial material 102 .
- the holes 118 may be positioned in predetermined locations, for example, in a predetermined pattern.
- the electrically conductive material 124 may contact and be temporarily secured to at least the second material 112 of the temporary bonding material 108 .
- the electrically conductive material 124 may bond with the second material 112 .
- the electrically conductive material 124 may be positioned in the holes 118 by, for example, electroplating, electroless plating, sputtering, or other process. Positioning the electrically conductive material 124 in the holes 118 may occur before any electrical connections intended to be present in the semiconductor device module have been formed, which may reduce the likelihood that that conditions under which the electrically conductive material 124 is positioned in the holes 118 would weaken, damage, or disconnect such connections. As a result, a greater quantity of the resulting semiconductor device modules may be operational, increasing yield.
- FIG. 4 is a cross-sectional side view of a fourth intermediate product 128 in a fourth stage of the process of making the semiconductor device module.
- the sacrificial material 102 may be removed, exposing posts 130 of the electrically conductive material 124 .
- the sacrificial material 102 may be removed by, for example, stripping, exposing the sacrificial material 102 to a solvent, exposing the sacrificial material 102 to light of a predetermined wavelength (e.g., ultraviolet light), or exposing the sacrificial material 102 to heat.
- the remaining posts 130 may be held in place by the temporary bonding material 108 .
- FIG. 5 is a cross-sectional side view of a fifth intermediate product 132 in a fifth stage of the process of making the semiconductor device module.
- a stack 134 of semiconductor dice 136 and 138 may be placed between at least two of the posts 130 .
- a stack 134 of semiconductor dice 136 and 138 may be placed between each of two respective sets of posts 130 .
- a given semiconductor device module may include multiple stacks 134 of semiconductor dice 136 and 138 .
- each semiconductor device module may ultimately include, two, four, six, or eight stacks 134 of semiconductor dice 136 and 138 .
- Placement of the stacks 134 of semiconductor dice 136 and 138 may be performed using, for example, a pick-and-place operation as is known in the art.
- the encapsulant 148 may include, for example, a dielectric material. More specifically, the encapsulant 148 may include a cured polymer material. The encapsulant 148 may structurally support the stacks 134 of semiconductor dice 136 and 138 and the posts 130 , as well as securing them in place.
- FIG. 7 is a cross-sectional side view of a seventh intermediate product 156 in a seventh stage of the process of making the semiconductor device module.
- material of at least the encapsulant 148 may be removed to render the encapsulant 148 flush with the bond pads 144 of each second semiconductor die 138 and with the upper surface 126 of each post 130 .
- material of the encapsulant 148 may be removed in a direction at least substantially perpendicular to the second active surface 142 of the second semiconductor die 138 .
- electrically conductive material 124 of one or more of the posts 130 may be removed during the seventh stage to render the upper surface 126 of each post 130 flush with the bond pads 144 of the second semiconductor dice 138 .
- FIG. 8 is a cross-sectional side view of an eighth intermediate product 158 in an eighth stage of the process of making the semiconductor device module.
- the bond pads 144 of each second semiconductor die 138 may be electrically connected to corresponding posts 130 .
- electrical connectors 160 may be formed, each extending from its corresponding post 130 , over an intervening portion of the encapsulant 148 , to a respective bond pad 144 .
- the electrical connectors 160 may be formed by, for example, placing or forming conductive traces extending from the posts 130 to their respective bond pads 144 .
- the electrical connectors 160 may include, for example, a metal or metal alloy material.
- a dielectric protective material 162 which may also be characterized as a passivation material, may be placed over at least the electrical connectors 160 .
- the protective material 162 may extend from a location located over the encapsulant 148 located laterally adjacent to a post 130 at a periphery of what will eventually form a given semiconductor device module, over the post 130 and its associated electrical connector 160 , over the second active surface 138 of the second semiconductor die 130 , over another electrical connector 160 and associated post 130 , to at least another portion of the encapsulant 148 located laterally adjacent to the other post 130 .
- the protective material 162 may extend from a location located over the encapsulant 148 located laterally adjacent to a post 130 at a periphery of what will eventually form a given semiconductor device module, over the post 130 and its associated electrical connector 160 , over each stack 134 of semiconductor dice 136 and 138 to be included in the semiconductor device module, over another electrical connector 160 and associated post 130 at an opposite periphery of what will eventually form the given semiconductor device module, to at least another portion of the encapsulant 148 located laterally adjacent to another post 130 on a side of what will eventually form the given semiconductor device module opposite where the protective material 162 started.
- the protective material 162 may include, for example, a polymer material.
- the other encapsulant 166 may be in direct contact with the first encapsulant 148 and the protective material 162 . In embodiments lacking the protective material 162 , the other encapsulant 166 may be in direct contact with the first encapsulant 148 , the electrical connectors 160 and, optionally, portions of any combination of the posts 130 , bond pads 144 , and second active surfaces 142 of the second semiconductor dice 138 .
- the other encapsulant 166 may include, for example, a dielectric material. More specifically, the other encapsulant 166 may include, for example, a cured polymer material. The other encapsulant 166 may be the same material as, or a different material from, the first encapsulant 148 .
- the ninth stage may further involve removing the support substrate 104 (see FIG. 8 ) from underneath the first active surfaces 140 of the first semiconductor dice 136 .
- the temporary bonding material 108 may be weakened or removed, and the support substrate 104 (see FIG. 8 ) may be displaced to detach the support substrate 104 (see FIG. 8 ) from the first active surfaces 140 of the first semiconductor dice 136 and other remaining components.
- the temporary bonding material 108 may be weakened or removed by exposure to, for example, heat, light (e.g., ultraviolet light), or a solvent, and the support substrate 104 (see FIG. 8 ) may be displaced laterally to detach the support substrate 104 (see FIG. 8 ) from the first active surfaces 140 of the first semiconductor dice 136 and other remaining components.
- the ninth stage may involve securing another support substrate 168 to the other encapsulant 166 on a side of the other encapsulant 166 opposite the stacks 134 of semiconductor dice 136 and 138 .
- another temporary bonding material 170 may be positioned over the other encapsulant 166 on a side of the other encapsulant 166 opposite the protective material 162 , and the other support substrate 168 may be placed in contact with the other temporary bonding material 170 to secure the other support substrate 168 to the other encapsulant 166 .
- the other support substrate 168 and the other temporary bonding material 170 may be selected from the materials described previously in connection with the first support substrate 104 and temporary bonding material 108 , and may include the same materials as, or different materials from, the actual materials used for the first support substrate 104 and temporary bonding material 108 .
- the assembly may then be inverted, supported by the other support substrate 168 , for further processing.
- the redistribution layer 174 may include contacts 176 in electrical communication with the bond pads 144 on the first active surfaces 140 of the first semiconductor dice 136 and other contacts 178 in electrical communication with the posts 130 , which may place contacts 178 in electrical communication with the bond pads 144 on the second active surfaces 142 of the second semiconductor dice 138 by way of the electrical connectors 160 .
- Routing connectors 180 may extend from the contacts 176 and 178 to bond pads 182 located on a side of the redistribution layer 174 opposite the stacks 134 of semiconductor dice 136 and 138 for output.
- the redistribution layer 174 may be formed by the selective, sequential placement of masses of electrically conductive material and dielectric material on the inverted assembly of FIG. 9 , or by the addition of a preformed redistribution layer 174 , as known in the art.
- bumps 184 of electrically conductive material may be placed on the bond pads 182 to enable the stacks 134 of semiconductor dice 136 and 138 to be operatively connected to another device or structure, for example higher-level packaging.
- the bumps 184 may be configured as balls, posts, pillars, columns, studs, slugs, or other masses of electrically conductive material secured to the bond pads 182 .
- the bumps 184 may comprise a ball grid array of solder balls.
- FIG. 11 is a cross-sectional side view of the semiconductor device module 186 formed by the process of FIGS. 1 through 10 .
- the other support substrate 168 may be removed by performing any of the actions described previously in connection with removal of the first support substrate 104 (see FIG. 8 ) as applied to the other support substrate 168 and its associated other temporary bonding material 170 .
- the method may enable testing, assembly, and use of only those stacks 134 known to contain operable semiconductor dice 136 and 138 . Moreover, such methodology may reduce the likelihood that electrical connections to the semiconductor dice 136 and 138 experience damage or fail because a greater proportion of the process actions have occurred prior to the introduction of the stack 134 .
- FIG. 19 is a cross-sectional side view of an eighth intermediate product 202 in an eighth stage of the other embodiment of the process of making the semiconductor device module 186 (see FIG. 11 ).
- the posts 130 may be electrically connected to the bond pads 144 of the second semiconductor die 138 of a corresponding stack 134 by forming respective electrical connectors 160 extending from given posts 130 , over the encapsulant 148 , to the bond pads 144 .
- the electrical connectors 160 may be covered by a protective material 162 .
- the electrical connectors 160 may be placed, and the protective material 162 may be added, by performing any of the actions described previously in connection with FIG. 8 , as applied to the structure of FIG. 19 .
- FIG. 20 is a cross-sectional side view of a ninth intermediate product 204 in a ninth stage of the other embodiment of the process of making the semiconductor device module 186 (see FIG. 11 ).
- the other encapsulant 166 may be placed over the optional protective material 162 and over the electrical connectors 160 .
- the other encapsulant 166 may be placed by performing any of the actions described previously in connection with FIG. 9 , as applied to the structure of FIG. 20 .
- the support substrate 104 may be removed by performing any of the actions described previously in connection with FIG. 9 , as applied to the structure of FIG. 20 , and placing bumps 184 of conductive material on the bond pads 182 of the redistribution layer 174 , which may be accomplished by performing any of the actions described previously in connection with FIG. 10 , as applied to the structure of FIG. 20 .
- FIG. 21 is a schematic block diagram of a system 214 including a semiconductor device module 206 in accordance with this disclosure.
- the system 214 includes a processor 208 electrically coupled with one or more semiconductor device modules 206 (e.g., one or more memory modules), one or more input devices 210 , and one or more output devices 212 .
- the system 214 may be a consumer electronic device, such as a desktop computer, a laptop computer, a tablet computer, an electronic reader, a smart phone or other type of communication device, as well as any type of computing system incorporating a semiconductor device module.
- the semiconductor device module 206 may include a memory device (e.g., one or more of the first and second semiconductor dice devices 136 and 138 ), as discussed above.
- Semiconductor device modules in accordance with this disclosure may enable better control over the height and width of systems into which they are incorporated. In addition, such semiconductor device modules may reduce process variation. Semiconductor device modules in accordance with this disclosure may further reduce or eliminate the necessity of forming through-silicon-vias and wirebonds to form electrical connections across semiconductor devices. Moreover, the posts described herein may increase throughput and maintain better signal quality that through-silicon-vias and wirebonds. Finally, the modules may enable better quality control through both the processing required to generate them and the ability to test complete modules before they are integrated with a system.
- methods of making semiconductor device modules may involve forming holes in a sacrificial material and forming posts of an electrically conductive material in the holes.
- the sacrificial material may be removed to expose the posts of the electrically conductive material.
- Stacks of semiconductor dice may be placed between respective sets of corresponding posts after removing the sacrificial material, each stack comprising two semiconductor dice having active surfaces facing away from one another.
- the posts and the stacks of semiconductor dice may be at least laterally encapsulated in an encapsulant. Material of at least the encapsulant may be removed to a predetermined thickness. Bond pads of one of the semiconductor dice of each stack may be electrically connected to the corresponding posts of the respective set after removing material of at least the encapsulant to the predetermined thickness.
- systems may include a processor configured to receive input and generate output and a semiconductor device module operatively connected to the processor.
- the semiconductor device module may include a first semiconductor die located on the redistribution layer, a first active surface of the first semiconductor die facing the redistribution layer.
- a second semiconductor die may be located on the first semiconductor die, a second active surface of the second semiconductor die facing away from the first semiconductor die.
- Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die, the posts extending from the redistribution layer to at least a location coplanar with the second active surface.
- a first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts.
- Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on the second active surface of the second semiconductor die.
- a second encapsulant may be located over the electrical connectors.
- Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die, the conductive bumps operatively connecting the semiconductor device module to the processor.
Abstract
Description
- This disclosure relates generally to semiconductor device modules and methods of making semiconductor device modules. More specifically, disclosed embodiments relate to methods of making semiconductor device modules that may increase yield, reduce warpage, and improve reliability.
- While this disclosure concludes with claims particularly pointing out and distinctly claiming specific embodiments, various features and advantages of embodiments within the scope of this disclosure may be more readily ascertained from the following description when read in conjunction with the accompanying drawings, in which:
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FIG. 1 is a cross-sectional side view of a first intermediate product in a first stage of a process of making a semiconductor device module; -
FIG. 2 is a cross-sectional side view of a second intermediate product in a second stage of the process of making the semiconductor device module; -
FIG. 3 is a cross-sectional side view of a third intermediate product in a third stage of the process of making the semiconductor device module; -
FIG. 4 is a cross-sectional side view of a fourth intermediate product in a fourth stage of the process of making the semiconductor device module; -
FIG. 5 is a cross-sectional side view of a fifth intermediate product in a fifth stage of the process of making the semiconductor device module; -
FIG. 6 is a cross-sectional side view of a sixth intermediate product in a sixth stage of the process of making the semiconductor device module; -
FIG. 7 is a cross-sectional side view of a seventh intermediate product in a seventh stage of the process of making the semiconductor device module; -
FIG. 8 is a cross-sectional side view of an eighth intermediate product in an eighth stage of the process of making the semiconductor device module; -
FIG. 9 is a cross-sectional side view of a ninth intermediate product in a ninth stage of the process of making the semiconductor device module; -
FIG. 10 is a cross-sectional side view of a tenth intermediate product in a tenth stage of the process of making the semiconductor device module; -
FIG. 11 is a cross-sectional side view of the semiconductor device module formed by the process ofFIGS. 1 through 10 ; -
FIG. 12 is a cross-sectional side view of a first intermediate product in a first stage of another embodiment of a process of making a semiconductor device module as depicted inFIG. 11 ; -
FIG. 13 is a cross-sectional side view of a second intermediate product in a second stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 14 is a cross-sectional side view of a third intermediate product in a third stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 15 is a cross-sectional side view of a fourth intermediate product in a fourth stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 16 is a cross-sectional side view of a fifth intermediate product in a fifth stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 17 is a cross-sectional side view of a sixth intermediate product in a sixth stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 18 is a cross-sectional side view of a seventh intermediate product in a seventh stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 19 is a cross-sectional side view of an eighth intermediate product in an eight stage of the other embodiment of the process of making the semiconductor device module; -
FIG. 20 is a cross-sectional side view of a ninth intermediate product in a ninth stage of the other embodiment of the process of making the semiconductor device module; and -
FIG. 21 is a schematic block diagram of a system including a semiconductor device module in accordance with this disclosure. - The illustrations presented in this disclosure are not meant to be actual views of any particular semiconductor device, semiconductor device module, component thereof, or act in a process of making a semiconductor device module, but are merely idealized representations employed to describe illustrative embodiments. Thus, the drawings are not necessarily to scale.
- Disclosed embodiments relate generally to methods of making semiconductor device modules that may increase yield, reduce warpage, and improve module reliability. More specifically, disclosed are embodiments of methods of making semiconductor device modules that may involve the formation of electrically conductive posts that are subsequently exposed and connected to a semiconductor device.
- Referring to
FIG. 1 , a cross-sectional side view of a firstintermediate product 100 in a first stage of a process of making a semiconductor device module is shown. The firstintermediate product 100 may be formed by temporarily securing asacrificial material 102 to asupport substrate 104. Thesacrificial material 102 may be, for example, of an at least substantially uniform thickness T as measured in a direction perpendicular to anupper surface 106 of thesupport substrate 104 to which thesacrificial material 102 is temporarily secured. Thesacrificial material 102 may include, for example, a dielectric material. More specifically, thesacrificial material 102 may include a photoresist material. As a specific, nonlimiting example, thesacrificial material 102 may comprise a photosensitive material including, for example, diazonaphthoquinone and a phenol formaldehyde resin (e.g., novolac resin). - The
support substrate 104 may be sized and shaped to structurally reinforce thesacrificial material 102. Thesupport substrate 104 may include, for example, a material with sufficient rigidity to support the overlyingsacrificial material 102. More specifically, thesupport substrate 104 may include, for example, a semiconductor material or a ceramic material. As a specific, nonlimiting example, thesupport substrate 104 may include a glass material. - The
sacrificial material 102 may be secured to thesupport substrate 104 by atemporary bonding material 108. Thetemporary bonding material 108 may include at least afirst material 110 configured to temporarily secure thesacrificial material 102 to thesupport substrate 104. Thefirst material 110 may include, for example, a polymeric material. More specifically, thefirst material 110 may include, for example, an adhesive material. As a specific, nonlimiting example, thefirst material 110 may include, for example, an ultraviolet-light-curable or a heat-curable adhesive material. Thefirst material 110 of thetemporary bonding material 108 may be interposed between thesacrificial material 102 and thesupport substrate 104. For example, thefirst material 110 may be in direct contact with theupper surface 106 of thesupport substrate 104 facing thesacrificial material 102. - In some embodiments, such as that shown in
FIG. 1 , thetemporary bonding material 108 may further include asecond material 112 configured to temporarily secure another structure of electrically conductive material to be formed during the process of forming a semiconductor device module. Thesecond material 112 may include, for example, a material configured to bond with an electrically conductive material. More specifically, thesecond material 112 may include, for example, an oxide, an inorganic material, a metal or metal alloy material. As specific, nonlimiting examples, thesecond material 112 may include silicon oxide, a carbide, aluminum, an aluminum alloy, copper, a copper alloy, gold, a gold alloy, silver, a silver alloy, tin, or a tin alloy. Thesecond material 112 may be in direct contact with alower surface 114 of thesacrificial material 102 facing thesupport substrate 104. For example, thesecond material 112 may be interposed between thefirst material 110 and thesacrificial material 102 as shown inFIG. 1 , or may be intermixed throughout thefirst material 110. - The
intermediate product 100 may be formed by, for example, placing thetemporary bonding material 108 on theupper surface 106 of thesupport substrate 104 and forming thesacrificial material 102 on the preformed and already-placedtemporary bonding material 108. As another example, theintermediate product 100 may be formed by forming thetemporary bonding material 108 on theupper surface 106 of thesupport substrate 104 and placing thelower surface 114 of a preformed mass of thesacrificial material 102 in contact with thetemporary bonding material 108. - The
intermediate product 100 may be scalable. For example, theintermediate product 100 may initiate a process for forming a single semiconductor device module, multiple semiconductor device modules in a line, or multiple semiconductor device modules in an array. -
FIG. 2 is a cross-sectional side view of a secondintermediate product 116 in a second stage of the process of making the semiconductor device module. During the second stage,holes 118 may be formed in thesacrificial material 102. Theholes 118 may extend from anupper surface 120 of thesacrificial material 102, through thesacrificial material 102, to at least thelower surface 114 of thesacrificial material 102. Theholes 118 may be positioned in predetermined locations, for example, in a predetermined pattern. - A height H of each
hole 118 may be, for example, between about 10 microns and about 200 microns. More specifically, the height H of eachhole 118 may be, for example, between about 50 microns and about 200 microns. As a specific, nonlimiting example, the height H of eachhole 118 may be, for example, between about 100 microns and about 200 microns (e.g., about 150 microns). A width W of eachhole 118 may be, for example, between about 10 microns and about 90 microns. More specifically, the width W of eachhole 118 may be, for example, between about 20 microns and about 50 microns. - The
holes 118 may be formed by, for example, applying a mask to theupper surface 120 of thesacrificial material 102 and removing material from exposed portions of thesacrificial material 102 not covered by the mask by exposure to light of a predetermined wavelength (e.g., ultraviolet light) or by etching. As additional examples, theholes 118 may be formed by drilling (e.g., laser drilling) or via exposure to a solvent. -
FIG. 3 is a cross-sectional side view of a thirdintermediate product 122 in a third stage of the process of making the semiconductor device module. During the third stage, an electricallyconductive material 124, such as, for example, copper, may be placed in theholes 118. For example, the electricallyconductive material 124 may fill theholes 118, such that the electricallyconductive material 124 may contact thetemporary bonding material 108 and anupper surface 126 of the electricallyconductive material 124 may be at least substantially flush with theupper surface 120 of thesacrificial material 102. - In embodiments in which the
temporary bonding material 108 includes thesecond material 112, the electricallyconductive material 124 may contact and be temporarily secured to at least thesecond material 112 of thetemporary bonding material 108. For example, the electricallyconductive material 124 may bond with thesecond material 112. - The electrically
conductive material 124 may be positioned in theholes 118 by, for example, electroplating, electroless plating, sputtering, or other process. Positioning the electricallyconductive material 124 in theholes 118 may occur before any electrical connections intended to be present in the semiconductor device module have been formed, which may reduce the likelihood that that conditions under which the electricallyconductive material 124 is positioned in theholes 118 would weaken, damage, or disconnect such connections. As a result, a greater quantity of the resulting semiconductor device modules may be operational, increasing yield. -
FIG. 4 is a cross-sectional side view of a fourthintermediate product 128 in a fourth stage of the process of making the semiconductor device module. During the fourth stage, thesacrificial material 102 may be removed, exposingposts 130 of the electricallyconductive material 124. Thesacrificial material 102 may be removed by, for example, stripping, exposing thesacrificial material 102 to a solvent, exposing thesacrificial material 102 to light of a predetermined wavelength (e.g., ultraviolet light), or exposing thesacrificial material 102 to heat. The remainingposts 130 may be held in place by thetemporary bonding material 108. -
FIG. 5 is a cross-sectional side view of a fifthintermediate product 132 in a fifth stage of the process of making the semiconductor device module. During the fifth stage, astack 134 ofsemiconductor dice posts 130. For example, astack 134 ofsemiconductor dice posts 130. As shown inFIG. 5 , a given semiconductor device module may includemultiple stacks 134 ofsemiconductor dice stacks 134 ofsemiconductor dice - Each
stack 134 may include at least twosemiconductor dice stack 134 may include a first semiconductor die 136 located proximate thesupport substrate 104 and a second semiconductor die 138 located on a side of the first semiconductor die 136 opposite thesupport substrate 104. A firstactive surface 140 of the first semiconductor die 136 may face thesupport substrate 104, and be in contact with thetemporary bonding material 108. A secondactive surface 142 of the second semiconductor die 138 may face in a direction opposite the direction in which the firstactive surface 140 faces. For example, the secondactive surface 142 of the second semiconductor die 138 may be located on a side of the second semiconductor die 138 opposite the first semiconductor die 136. The first semiconductor die 136 may be secured to the second semiconductor die 138 by abonding material 145 located between the first semiconductor die 136 and the second semiconductor die 138. More specifically, thebonding material 145 may be, for example, located between, and in direct contact with, a firstinactive surface 141 of the first semiconductor die 136 and a secondinactive surface 143 of the second semiconductor die 138. Each of the firstactive surface 140 and the secondactive surface 142 may includebond pads 144 configured to form electrical and operative connections. The firstactive surface 140 of the first semiconductor die 136 and the secondactive surface 142 of the second semiconductor die 138 may include integrated circuitry embedded therein, the integrated circuitry being electrically and operatively connected to thebond pads 144. For example, the first semiconductor die 136, the second semiconductor die 138, or both the first semiconductor die 136 and the second semiconductor die 138 may be configured as a logic chip or a memory chip. - Placement of the
stacks 134 ofsemiconductor dice -
FIG. 6 is a cross-sectional side view of a sixthintermediate product 146 in a sixth stage of the process of making the semiconductor device module. During the sixth stage, theposts 130 and thestacks 134 ofsemiconductor dice encapsulant 148. For example, theencapsulant 148 may completely cover at least the first side surfaces 150 of the first semiconductor die 136, the second side surfaces 152 of the second semiconductor die 138, and theside surface 154 of eachpost 130. In some embodiments, theencapsulant 148 may further extend over the secondactive surface 142 of the second semiconductor die 138, theupper surface 126 of one ormore posts 130, or both. Theencapsulant 148 may include, for example, a dielectric material. More specifically, theencapsulant 148 may include a cured polymer material. Theencapsulant 148 may structurally support thestacks 134 ofsemiconductor dice posts 130, as well as securing them in place. -
FIG. 7 is a cross-sectional side view of a seventhintermediate product 156 in a seventh stage of the process of making the semiconductor device module. During the seventh stage, material of at least theencapsulant 148 may be removed to render theencapsulant 148 flush with thebond pads 144 of each second semiconductor die 138 and with theupper surface 126 of eachpost 130. For example, material of theencapsulant 148 may be removed in a direction at least substantially perpendicular to the secondactive surface 142 of the second semiconductor die 138. In some embodiments, electricallyconductive material 124 of one or more of theposts 130 may be removed during the seventh stage to render theupper surface 126 of eachpost 130 flush with thebond pads 144 of thesecond semiconductor dice 138. In some embodiments, material of one or more of thebond pads 144 may be removed during the seventh stage to render thebond pads 144 flush with theupper surfaces 126 of theposts 130 and theencapsulant 148. For example, material of thebond pads 144 may initially protrude from the secondactive surface 142 of the second semiconductor die 138, and removal may render them closer to, or flush with, the secondactive surface 142. Removal may be accomplished by, for example, grinding away the relevant material. -
FIG. 8 is a cross-sectional side view of an eighthintermediate product 158 in an eighth stage of the process of making the semiconductor device module. During the eighth stage, thebond pads 144 of each second semiconductor die 138 may be electrically connected to correspondingposts 130. For example,electrical connectors 160 may be formed, each extending from itscorresponding post 130, over an intervening portion of theencapsulant 148, to arespective bond pad 144. Theelectrical connectors 160 may be formed by, for example, placing or forming conductive traces extending from theposts 130 to theirrespective bond pads 144. Theelectrical connectors 160 may include, for example, a metal or metal alloy material. - Electrically connecting the second semiconductor die 138 via the
posts 130 andelectrical connectors 160 may be less costly and more reliable than conventional methods of electrically connecting similarly configured semiconductor dice to underlying structures. For example, each of forming through-silicon vias and forming wire bonds takes more time and expends more resources without producing a significantly lower failure rate than the methods disclosed herein. As a result, the disclosed methods may save time and resources while maintaining or improving the reliability of electrical connections, increasing yield. - In some embodiments, a dielectric
protective material 162, which may also be characterized as a passivation material, may be placed over at least theelectrical connectors 160. For example, theprotective material 162 may extend from a location located over theencapsulant 148 located laterally adjacent to apost 130 at a periphery of what will eventually form a given semiconductor device module, over thepost 130 and its associatedelectrical connector 160, over the secondactive surface 138 of the second semiconductor die 130, over anotherelectrical connector 160 and associatedpost 130, to at least another portion of theencapsulant 148 located laterally adjacent to theother post 130. More specifically, theprotective material 162 may extend from a location located over theencapsulant 148 located laterally adjacent to apost 130 at a periphery of what will eventually form a given semiconductor device module, over thepost 130 and its associatedelectrical connector 160, over eachstack 134 ofsemiconductor dice electrical connector 160 and associatedpost 130 at an opposite periphery of what will eventually form the given semiconductor device module, to at least another portion of theencapsulant 148 located laterally adjacent to anotherpost 130 on a side of what will eventually form the given semiconductor device module opposite where theprotective material 162 started. Theprotective material 162 may include, for example, a polymer material. -
FIG. 9 is a cross-sectional side view of a ninthintermediate product 164 in a ninth stage of the process of making the semiconductor device module. During the ninth stage, anotherencapsulant 166 may be positioned over thestacks 134 ofsemiconductor dice other encapsulant 166 may be placed over an entire exposed upper portion of the eighth intermediate product 158 (seeFIG. 8 ), such that theother encapsulant 166 may cover thefirst encapsulant 148, theposts 130 and associatedelectrical connectors 160, thebond pads 144 andstacks 134 ofsemiconductor dice protective material 162. In embodiments including theprotective material 162, theother encapsulant 166 may be in direct contact with thefirst encapsulant 148 and theprotective material 162. In embodiments lacking theprotective material 162, theother encapsulant 166 may be in direct contact with thefirst encapsulant 148, theelectrical connectors 160 and, optionally, portions of any combination of theposts 130,bond pads 144, and secondactive surfaces 142 of thesecond semiconductor dice 138. Theother encapsulant 166 may include, for example, a dielectric material. More specifically, theother encapsulant 166 may include, for example, a cured polymer material. Theother encapsulant 166 may be the same material as, or a different material from, thefirst encapsulant 148. - After placing the
other encapsulant 166, the ninth stage may further involve removing the support substrate 104 (seeFIG. 8 ) from underneath the firstactive surfaces 140 of thefirst semiconductor dice 136. For example, the temporary bonding material 108 (seeFIG. 8 ) may be weakened or removed, and the support substrate 104 (seeFIG. 8 ) may be displaced to detach the support substrate 104 (seeFIG. 8 ) from the firstactive surfaces 140 of thefirst semiconductor dice 136 and other remaining components. More specifically, the temporary bonding material 108 (seeFIG. 8 ) may be weakened or removed by exposure to, for example, heat, light (e.g., ultraviolet light), or a solvent, and the support substrate 104 (seeFIG. 8 ) may be displaced laterally to detach the support substrate 104 (seeFIG. 8 ) from the firstactive surfaces 140 of thefirst semiconductor dice 136 and other remaining components. - In addition, the ninth stage may involve securing another
support substrate 168 to theother encapsulant 166 on a side of theother encapsulant 166 opposite thestacks 134 ofsemiconductor dice temporary bonding material 170 may be positioned over theother encapsulant 166 on a side of theother encapsulant 166 opposite theprotective material 162, and theother support substrate 168 may be placed in contact with the othertemporary bonding material 170 to secure theother support substrate 168 to theother encapsulant 166. Theother support substrate 168 and the othertemporary bonding material 170 may be selected from the materials described previously in connection with thefirst support substrate 104 andtemporary bonding material 108, and may include the same materials as, or different materials from, the actual materials used for thefirst support substrate 104 andtemporary bonding material 108. The assembly may then be inverted, supported by theother support substrate 168, for further processing. -
FIG. 10 is a cross-sectional side view of a tenthintermediate product 172 in a tenth stage of the process of making the semiconductor device module. During the tenth stage, aredistribution layer 174 may be formed adjacent to the firstactive surface 140 of thefirst semiconductor dice 136. Theredistribution layer 174 may be configured to route signals to and from thesemiconductor dice stacks 134. For example, theredistribution layer 174 may includecontacts 176 in electrical communication with thebond pads 144 on the firstactive surfaces 140 of thefirst semiconductor dice 136 andother contacts 178 in electrical communication with theposts 130, which may placecontacts 178 in electrical communication with thebond pads 144 on the secondactive surfaces 142 of thesecond semiconductor dice 138 by way of theelectrical connectors 160.Routing connectors 180 may extend from thecontacts bond pads 182 located on a side of theredistribution layer 174 opposite thestacks 134 ofsemiconductor dice redistribution layer 174 may be formed by the selective, sequential placement of masses of electrically conductive material and dielectric material on the inverted assembly ofFIG. 9 , or by the addition of a preformedredistribution layer 174, as known in the art. - Also during the tenth stage, bumps 184 of electrically conductive material may be placed on the
bond pads 182 to enable thestacks 134 ofsemiconductor dice bumps 184 may be configured as balls, posts, pillars, columns, studs, slugs, or other masses of electrically conductive material secured to thebond pads 182. As a specific, nonlimiting example, thebumps 184 may comprise a ball grid array of solder balls. -
FIG. 11 is a cross-sectional side view of thesemiconductor device module 186 formed by the process ofFIGS. 1 through 10 . As a final act in stage ten, the other support substrate 168 (seeFIG. 10 ) may be removed by performing any of the actions described previously in connection with removal of the first support substrate 104 (seeFIG. 8 ) as applied to theother support substrate 168 and its associated othertemporary bonding material 170. - The resulting
semiconductor device module 186 may include aredistribution layer 174 includingbond pads 182 electrically connected tobumps 184 of electrically conductive material on a first side of theredistribution layer 174 andcontacts Bumps 184 of electrically conductive material may be secured to thebond pads 182. A first set of thecontacts 176 may be secured tobond pads 144 of a first semiconductor die 136 of eachstack 134 ofsemiconductor dice semiconductor device module 186. A second set of thecontacts 178 may be secured toposts 130 extending at least partially through anencapsulant 148 laterally surrounding thestacks 134 ofsemiconductor dice posts 130 extending in a direction at least substantially perpendicular to a firstactive surface 140 of the first semiconductor die 136.Respective posts 130 may be electrically connected to bondpads 144 of a second semiconductor die 138 of thestack 134 viaelectrical connectors 160 extending laterally over theencapsulant 148. A secondactive surface 142 of the second semiconductor die 138 may face in a direction opposite a direction in which the firstactive surface 140 faces. Theelectrical connectors 160 may be covered by aprotective material 162, which may, in turn, be covered by anotherencapsulant 166. Thesemiconductor device module 186 may be operatively connected to another device by contacting thebumps 184 to corresponding bond pads and reflowing thebumps 184 to form an electrical connection. -
FIG. 12 is a cross-sectional side view of a firstintermediate product 188 in a first stage of another embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). In this embodiment, thestacks 134 ofsemiconductor dice redistribution layer 174, rather than introducing theredistribution layer 174 after placing thestacks 134 ofsemiconductor dice FIGS. 5 through 10 . During the first stage, theredistribution layer 174 may be secured to thesupport substrate 104. For example, apreformed redistribution layer 174 may be placed in contact with thetemporary bonding material 108 on thesupport substrate 104, or theredistribution layer 174 may be formed on thebonding material 108 by the selective, sequential positioning of electrically conductive (by application and patterning of metal layers) and dielectric materials (by application and patterning to form apertures) on thebonding material 108 over thesupport substrate 104. Theredistribution layer 174 may includebond pads 182 in predetermined locations on a first side of theredistribution layer 174 facing thesupport substrate 104 andcontacts redistribution layer 174.Routing connectors 180 may extend between, and electrically connect, thecontacts bond pads 182. -
FIG. 13 is a cross-sectional side view of a secondintermediate product 190 in a second stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the second stage, thesacrificial material 102 may be positioned on theredistribution layer 174 on a side of theredistribution layer 174 opposite thesupport substrate 104, which may be accomplished by performing the acts described previously in connection withFIG. 1 , as applied to theredistribution layer 174 shown inFIG. 13 . For example, thesacrificial material 102 may cover the upper surface of theredistribution layer 174, and be in direct contact with thecontacts -
FIG. 14 is a cross-sectional side view of a thirdintermediate product 192 in a third stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the third stage, theholes 118 may be formed in thesacrificial material 102. Theholes 118 may be aligned with thecontacts 178 configured for connection to the second semiconductor dice 138 (seeFIG. 11 ), such that formation of theholes 118 may expose thecontacts 178. Formation of theholes 118 may be accomplished by performing any of the actions described previously in connection withFIG. 2 , as applied to the positioning and configuration shown inFIG. 14 . -
FIG. 15 is a cross-sectional side view of a fourthintermediate product 194 in a fourth stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the fourth stage, electricallyconductive material 124 may be placed in theholes 118. When the electricallyconductive material 124 is placed in theholes 118, the electricallyconductive material 124 may be secured to, and form an electrical connection with, thecontacts 178 exposed at the bottoms of theholes 118. The electricallyconductive material 124 may be placed in theholes 118 by performing any of the actions described previously in connection withFIG. 3 , as applied to the positioning and configuration shown inFIG. 15 . -
FIG. 16 is a cross-sectional side view of a fifthintermediate product 196 in a fifth stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the fifth stage, thesacrificial material 102 may be removed, exposing theposts 130 of the electricallyconductive material 124. Removing thesacrificial material 102 may also expose thecontacts 176 of theredistribution layer 174 not covered by, and located laterally between sets of, theposts 130. Removal of thesacrificial material 102 may be accomplished by performing any of the actions described previously in connection withFIG. 4 , as applied to the configuration shown inFIG. 16 . -
FIG. 17 is a cross-sectional side view of a sixthintermediate product 198 in a sixth stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the sixth stage, thestacks 134 ofsemiconductor dice posts 130 on thecontacts 176 of theredistribution layer 174. More specifically, thebond pads 144 of the first semiconductor die 136 of eachstack 134 may be aligned withcorresponding contacts 176 of theredistribution layer 174, thebond pads 144 andcontacts 176 may be brought into contact with one another, and the first semiconductor die 136 may be mechanically and electrically connected to theredistribution layer 174 by securing thebond pads 144 to the contacts 176 (e.g., by introducing a solder material or by flowing an electrically conductive material of thebond pads 144, thecontacts 176, or both). Positioning of thestacks 134 relative to theredistribution layer 174 may be accomplished by performing any of the acts described previously in connection withFIG. 5 , as applied to the structure and positioning ofFIG. 17 . By placing thestacks 134 ofsemiconductor dice stacks 134 known to containoperable semiconductor dice semiconductor dice stack 134. -
FIG. 18 is a cross-sectional side view of a seventhintermediate product 200 in a seventh stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the seventh stage, thestacks 134 ofsemiconductor dice posts 130 may be at least laterally encapsulated in theencapsulant 148. In addition, a portion of theencapsulant 148 and, optionally, a portion of one or more of theposts 130 and thebond pads 144 of the second semiconductor die 138 may be removed, such as, for example, by grinding to a final thickness. The encapsulating and material removal may be accomplished by performing any of the actions described previously in connection withFIGS. 6 and 7 , as applied to the structure ofFIG. 18 . -
FIG. 19 is a cross-sectional side view of an eighthintermediate product 202 in an eighth stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the eighth stage, theposts 130 may be electrically connected to thebond pads 144 of the second semiconductor die 138 of acorresponding stack 134 by forming respectiveelectrical connectors 160 extending from givenposts 130, over theencapsulant 148, to thebond pads 144. In some embodiments, theelectrical connectors 160 may be covered by aprotective material 162. Theelectrical connectors 160 may be placed, and theprotective material 162 may be added, by performing any of the actions described previously in connection withFIG. 8 , as applied to the structure ofFIG. 19 . -
FIG. 20 is a cross-sectional side view of a ninthintermediate product 204 in a ninth stage of the other embodiment of the process of making the semiconductor device module 186 (seeFIG. 11 ). During the ninth stage, theother encapsulant 166 may be placed over the optionalprotective material 162 and over theelectrical connectors 160. Theother encapsulant 166 may be placed by performing any of the actions described previously in connection withFIG. 9 , as applied to the structure ofFIG. 20 . To form the semiconductor device module 186 (seeFIG. 11 ), thesupport substrate 104 may be removed by performing any of the actions described previously in connection withFIG. 9 , as applied to the structure ofFIG. 20 , and placingbumps 184 of conductive material on thebond pads 182 of theredistribution layer 174, which may be accomplished by performing any of the actions described previously in connection withFIG. 10 , as applied to the structure ofFIG. 20 . -
FIG. 21 is a schematic block diagram of asystem 214 including asemiconductor device module 206 in accordance with this disclosure. Thesystem 214 includes aprocessor 208 electrically coupled with one or more semiconductor device modules 206 (e.g., one or more memory modules), one ormore input devices 210, and one ormore output devices 212. Thesystem 214 may be a consumer electronic device, such as a desktop computer, a laptop computer, a tablet computer, an electronic reader, a smart phone or other type of communication device, as well as any type of computing system incorporating a semiconductor device module. Thesemiconductor device module 206 may include a memory device (e.g., one or more of the first and secondsemiconductor dice devices 136 and 138), as discussed above. - Semiconductor device modules in accordance with this disclosure may enable better control over the height and width of systems into which they are incorporated. In addition, such semiconductor device modules may reduce process variation. Semiconductor device modules in accordance with this disclosure may further reduce or eliminate the necessity of forming through-silicon-vias and wirebonds to form electrical connections across semiconductor devices. Moreover, the posts described herein may increase throughput and maintain better signal quality that through-silicon-vias and wirebonds. Finally, the modules may enable better quality control through both the processing required to generate them and the ability to test complete modules before they are integrated with a system.
- As an illustrative summary, methods of making semiconductor device modules may involve forming holes in a sacrificial material and placing an electrically conductive material in the holes. The sacrificial material may be removed to expose posts of the electrically conductive material. A stack of semiconductor dice may be placed between at least two of the posts after removing the sacrificial material, one of the semiconductor dice of the stack including an active surface facing in a direction opposite a direction in which another active surface of another of the semiconductor dice of the stack. The posts and the stack of semiconductor dice may be at least laterally encapsulated in an encapsulant. Bond pads of the one of the semiconductor dice may be electrically connected to corresponding posts after at least laterally encapsulating the posts and the stack of semiconductor dice.
- As another illustrative summary, methods of making semiconductor device modules may involve forming holes in a sacrificial material and forming posts of an electrically conductive material in the holes. The sacrificial material may be removed to expose the posts of the electrically conductive material. Stacks of semiconductor dice may be placed between respective sets of corresponding posts after removing the sacrificial material, each stack comprising two semiconductor dice having active surfaces facing away from one another. The posts and the stacks of semiconductor dice may be at least laterally encapsulated in an encapsulant. Material of at least the encapsulant may be removed to a predetermined thickness. Bond pads of one of the semiconductor dice of each stack may be electrically connected to the corresponding posts of the respective set after removing material of at least the encapsulant to the predetermined thickness.
- As yet another illustrative summary, semiconductor device modules may include a redistribution layer and a first semiconductor die located on the redistribution layer, a first active surface of the first semiconductor die facing the redistribution layer. A second semiconductor die may be located on the first semiconductor die, a second active surface of the second semiconductor die facing away from the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die, the posts extending from the redistribution layer to at least a location coplanar with the second active surface. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on the second active surface of the second semiconductor die. A second encapsulant may be located over the electrical connectors. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.
- As still another illustrative summary, systems may include a processor configured to receive input and generate output and a semiconductor device module operatively connected to the processor. The semiconductor device module may include a first semiconductor die located on the redistribution layer, a first active surface of the first semiconductor die facing the redistribution layer. A second semiconductor die may be located on the first semiconductor die, a second active surface of the second semiconductor die facing away from the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die, the posts extending from the redistribution layer to at least a location coplanar with the second active surface. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on the second active surface of the second semiconductor die. A second encapsulant may be located over the electrical connectors. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die, the conductive bumps operatively connecting the semiconductor device module to the processor.
- While certain illustrative embodiments have been described in connection with the figures, those of ordinary skill in the art will recognize and appreciate that the scope of this disclosure is not limited to those embodiments explicitly shown and described in this disclosure. Rather, many additions, deletions, and modifications to the embodiments described in this disclosure may be made to produce embodiments within the scope of this disclosure, such as those specifically claimed, including legal equivalents. In addition, features from one disclosed embodiment may be combined with features of another disclosed embodiment while still being within the scope of this disclosure, as contemplated by the inventors.
Claims (21)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/660,442 US10192843B1 (en) | 2017-07-26 | 2017-07-26 | Methods of making semiconductor device modules with increased yield |
CN201880046997.0A CN110892515A (en) | 2017-07-26 | 2018-07-13 | Method for manufacturing semiconductor device module with increased yield |
PCT/US2018/042140 WO2019022975A1 (en) | 2017-07-26 | 2018-07-13 | Methods of making semiconductor device modules with increased yield |
CN202210842644.XA CN115206900B (en) | 2017-07-26 | 2018-07-13 | Method for manufacturing semiconductor device module with increased yield |
TW107125604A TWI684391B (en) | 2017-07-26 | 2018-07-25 | Methods of making semiconductor device modules with increased yield |
TW109101529A TWI740352B (en) | 2017-07-26 | 2018-07-25 | Methods of making semiconductor device modules with increased yield, and related semiconductor device modules |
US16/175,449 US10325874B2 (en) | 2017-07-26 | 2018-10-30 | Device module having a plurality of dies electrically connected by posts |
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CN115206900A (en) | 2022-10-18 |
CN110892515A (en) | 2020-03-17 |
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US10192843B1 (en) | 2019-01-29 |
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CN115206900B (en) | 2023-10-24 |
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