CN115191034A - 光接收元件和电子设备 - Google Patents

光接收元件和电子设备 Download PDF

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Publication number
CN115191034A
CN115191034A CN202180016543.0A CN202180016543A CN115191034A CN 115191034 A CN115191034 A CN 115191034A CN 202180016543 A CN202180016543 A CN 202180016543A CN 115191034 A CN115191034 A CN 115191034A
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CN
China
Prior art keywords
region
semiconductor substrate
receiving element
photoelectric conversion
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202180016543.0A
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English (en)
Chinese (zh)
Inventor
前田英训
石桥健三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115191034A publication Critical patent/CN115191034A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Light Receiving Elements (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
CN202180016543.0A 2020-03-31 2021-02-08 光接收元件和电子设备 Withdrawn CN115191034A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-065335 2020-03-31
JP2020065335 2020-03-31
PCT/JP2021/004523 WO2021199681A1 (ja) 2020-03-31 2021-02-08 受光素子および電子機器

Publications (1)

Publication Number Publication Date
CN115191034A true CN115191034A (zh) 2022-10-14

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ID=77928496

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180016543.0A Withdrawn CN115191034A (zh) 2020-03-31 2021-02-08 光接收元件和电子设备

Country Status (5)

Country Link
US (1) US20230178576A1 (https=)
EP (1) EP4131430A4 (https=)
JP (1) JPWO2021199681A1 (https=)
CN (1) CN115191034A (https=)
WO (1) WO2021199681A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12218165B2 (en) * 2021-06-18 2025-02-04 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor image sensor and method of manufacturing the same
US12563852B2 (en) * 2022-01-20 2026-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Uniform trenches in semiconductor devices and manufacturing method thereof
CN114500868B (zh) * 2022-04-18 2022-07-12 深圳锐视智芯科技有限公司 一种evs像素工作方法及相关装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319784A (ja) * 2003-04-16 2004-11-11 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP4938238B2 (ja) * 2005-01-07 2012-05-23 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
KR101232282B1 (ko) * 2011-04-27 2013-02-12 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
US9484376B2 (en) * 2014-05-30 2016-11-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor isolation structure and manufacturing method thereof
CN107949913B (zh) * 2015-09-09 2019-04-19 松下知识产权经营株式会社 固体摄像元件
US10418407B2 (en) * 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
US11411030B2 (en) * 2017-02-17 2022-08-09 Sony Semiconductor Solutions Corporation Imaging element and electronic apparatus
KR102430496B1 (ko) * 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
JPWO2019138923A1 (ja) * 2018-01-11 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器
TWI879128B (zh) * 2018-01-23 2025-04-01 日商索尼半導體解決方案公司 光檢測裝置
JP2019140219A (ja) * 2018-02-09 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
JP7250427B2 (ja) * 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
KR102646903B1 (ko) * 2018-09-04 2024-03-12 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
WO2021199681A1 (ja) 2021-10-07
JPWO2021199681A1 (https=) 2021-10-07
EP4131430A4 (en) 2023-08-09
US20230178576A1 (en) 2023-06-08
EP4131430A1 (en) 2023-02-08

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Application publication date: 20221014