CN115181267B - 一种低残影聚酰亚胺及其制备方法、应用 - Google Patents
一种低残影聚酰亚胺及其制备方法、应用 Download PDFInfo
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Abstract
本发明公开了一种低残影聚酰亚胺,其原料包括:二胺单体、脂环族二酐单体、含有哌啶基团的添加剂和石墨烯;其中,二胺单体为含有直链烷基的二胺单体和N,N,N',N'‑四(对氨基苯基)对苯二胺的混合物。本发明还公开了上述低残影聚酰亚胺的制备方法。本发明还公开了上述低残影聚酰亚胺在液晶取向膜中的应用。本发明从提高电压保持率,提高膜的配向性能和改善离子、电荷堆积三个方面出发,相互配合,使得本发明能很好的改善液晶残像。
Description
技术领域
本发明涉及聚酰亚胺技术领域,尤其涉及一种低残影聚酰亚胺及其制备方法、应用。
背景技术
薄膜晶体管液晶显示器件(TFT-LCD)因其具有高分辨率、高亮度、重量轻、能耗低和平板化等显示优点,已广泛应用于人们工作和生活的各个方面。TFT-LCD包括夹在两块基板和滤色器基板之间的液晶层、向液晶层施加电场的像素电极和共用电极、控制液晶层的液晶分子取向的取向膜、切换提供给像素电极的电信号的薄膜晶体管等。取向膜作为TFTLCD构成之一,其作用是使基板上的液晶分子朝一个方向均匀取向,并使液晶分子与基板平面具有一定的倾斜角(预倾角)。因此,液晶取向膜与液晶显示器件的显示品质息息相关,其功能伴随TFT-LCD的高品质化显得尤为重要。
近年来伴随着液晶显示器件应用范围的不断扩大,许多时候会出现残像现象,残像宏观表现为当液晶显示器长时间显示同一画面,而后切换画面时,原画面会残留在下一个画面中。残像产生的原因有多种,比如:液晶显示元件的电压保持率较低;取向膜的配向性能降低;在电压施压结束后,取向膜内部电荷残留、一部分电荷残留变成直流电压,另外吸附着的离子也转变成直流残留,进而造成残像等。残像影响液晶产品的使用,因此需要对其进行改善。
发明内容
基于背景技术存在的技术问题,本发明提出了一种低残影聚酰亚胺及其制备方法、应用,本发明从提高电压保持率,提高膜的配向性能和改善离子、电荷堆积三个方面出发,相互配合,使得本发明能很好的改善液晶残像。
本发明提出了一种低残影聚酰亚胺,其原料包括:二胺单体、脂环族二酐单体、含有哌啶基团的添加剂和石墨烯;其中,二胺单体为含有直链烷基的二胺单体和N,N,N',N'-四(对氨基苯基)对苯二胺的混合物。
优选地,含有哌啶基团的添加剂为4-氨基-2,2,6,6-四甲基哌啶、4-氨甲基哌啶中的至少一种。
优选地,二胺单体、脂环族二酐单体和含有哌啶基团的添加剂的摩尔比为10:10.6-11.1:0.01-0.02。
优选地,含有直链烷基的二胺单体、N,N,N',N'-四(对氨基苯基)对苯二胺的摩尔比为9-9.5:0.5-1。
优选地,石墨烯占为原料总重的0.05-0.1wt%。
优选地,含有直链烷基的二胺单体包括:2,4-二氨基十二烷基苯、2,4-二氨基十六烷基苯中至少一种。
优选地,脂环族二酐单体包括:1,2,3,4-环戊四羧酸二酐、1,2,4,5-环己烷四甲酸二酐中至少一种。
本发明还提出了上述低残影聚酰亚胺的制备方法,包括如下步骤:在惰性气体氛围中,向均匀分散石墨烯的溶剂中,加入含有直链烷基的二胺单体、脂环族二酐单体,进行反应,然后加入N,N,N',N'-四(对氨基苯基)对苯二胺继续反应,最后加入含有哌啶基团的添加剂继续反应得到聚酰胺酸溶液,亚胺化得到低残影聚酰亚胺。
上述亚胺化方法可以为高温加热、化学亚胺化等。
优选地,于室温进行反应8-10h,然后加入N,N,N',N'-四(对氨基苯基)对苯二胺继续30-40min反应,最后加入含有哌啶基团的添加剂继续反应20-30min得到聚酰胺酸溶液。
本发明还提出了上述低残影聚酰亚胺在液晶取向膜中的应用。
在制备液晶取向膜时,可以将上述聚酰胺酸溶液涂覆在基底表面,然后亚胺化制得液晶取向膜;也可以将上述低残影聚酰亚胺用溶剂溶解后,涂覆在基底表面,然后干燥去除溶剂制得液晶取向膜。涂覆方式有多种,可以为喷涂、旋涂覆等。
有益效果
1.选用脂环族二酐单体、含有直链烷基的二胺单体反映,可以改善聚酰亚胺的溶解性并且能提高聚酰亚胺膜的电压保持率;
2.选用N,N,N',N'-四(对氨基苯基)对苯二胺和石墨烯以适宜比例配合,使得链段具有适宜的交联度,提高其聚酰亚胺膜的力学性能,并且能提高膜尺寸的热稳定性,避免受热出现膨胀,导致配向性能降低,提高膜的配向性能;
3.选用石墨烯和含有哌啶基团的添加剂以适宜比例相互配合,在聚酰亚胺中引入哌啶结构,可以产生功能自由基,在液晶显示器显示时,石墨烯可以促进残留的电荷转移,避免电荷堆积,并且石墨烯可以促进功能自由基捕获残留离子,避免产生堆积;当液晶显示器显示结束时,释放离子,功能自由基可循环使用;
本发明从提高电压保持率,提高膜的配向性能和改善离子、电荷堆积三个方面出发,相互配合,使得本发明能很好的改善液晶残像。
具体实施方式
下面,通过具体实施例对本发明的技术方案进行详细说明,但是应该明确提出这些实施例用于举例说明,但是不解释为限制本发明的范围。
实施例1
一种低残影聚酰亚胺的制备方法,包括如下步骤:将5.3mg石墨烯加入N,N-二甲基乙酰胺中,超声搅拌30min分散均匀,然后加入9mmol 2,4-二氨基十二烷基苯混匀溶解,然后通入氮气,排出空气,加入11.1mmol的1,2,3,4-环戊四羧酸二酐混匀溶解,于室温搅拌反应8h,然后加入1mmol的N,N,N',N'-四(对氨基苯基)对苯二胺继续搅拌反应30min,最后加入0.02mmol 4-氨基-2,2,6,6-四甲基哌啶继续反应20min得到聚酰胺酸溶液,分别于120℃、150℃、200℃、280℃保温0.5h得到低残影聚酰亚胺。
实施例2
一种低残影聚酰亚胺的制备方法,包括如下步骤:将2.9mg石墨烯加入N,N-二甲基乙酰胺中,超声搅拌30min分散均匀,然后加入9.5mmol 2,4-二氨基十六烷基苯混匀溶解,然后通入氮气,排出空气,加入10.6mmol的1,2,4,5-环己烷四甲酸二酐混匀溶解,于室温搅拌反应10h,然后加入0.5mmol的N,N,N',N'-四(对氨基苯基)对苯二胺继续搅拌反应40min,最后加入0.01mmol 4-氨甲基哌啶继续反应30min得到聚酰胺酸溶液,分别于120℃、150℃、200℃、280℃保温0.5h得到低残影聚酰亚胺。
实施例3
一种低残影聚酰亚胺的制备方法,包括如下步骤:将5.9mg石墨烯加入N,N-二甲基乙酰胺中,超声搅拌30min分散均匀,然后加入9.2mmol 2,4-二氨基十六烷基苯混匀溶解,然后通入氮气,排出空气,加入10.9mmol的1,2,4,5-环己烷四甲酸二酐混匀溶解,于室温搅拌反应9h,然后加入0.8mmol的N,N,N',N'-四(对氨基苯基)对苯二胺继续搅拌反应35min,最后加入0.02mmol 4-氨甲基哌啶继续反应25min得到聚酰胺酸溶液,分别于120℃、150℃、200℃、280℃保温0.5h得到低残影聚酰亚胺。
对比例1
不含4-氨甲基哌啶,其他同实施例3。
对比例2
不含石墨烯,其他同实施例3。
对比例3
不含石墨烯和4-氨甲基哌啶,其他同实施例3。
对比例4
将“0.8mmol的N,N,N',N'-四(对氨基苯基)对苯二胺”,替换成“0.8mmol的2,4-二氨基十六烷基苯”,其他同实施例3。
对比例5
将“9.2mmol 2,4-二氨基十六烷基苯”、“0.8mmol的N,N,N',N'-四(对氨基苯基)对苯二胺”,替换成“8mmol 2,4-二氨基十六烷基苯、2mmol的N,N,N',N'-四(对氨基苯基)对苯二胺”,其他同实施例3。
取实施例1-3和对比例1-5制得的聚酰亚胺,分别制备液晶取向膜,液晶取向膜制备的具体步骤为:取10cm×10cm的ITO玻璃,经酒精清洗、洗剂超声、清水超声、清水喷淋、气枪干燥、高温干燥和冷却等工序完成玻璃清洗;然后将聚酰亚胺溶液涂覆在ITO玻璃表面,干燥去除溶剂,然后用摩擦布对膜进行取向得到液晶取向膜。
分别取实施例1-3和对比例1-5中各两片摩擦取向完成的玻璃,在其中一片玻璃表面分布涂覆封框胶,对位后进行对盒工序,确保上下两片玻璃的摩擦取向方向互相垂直,然后放入150℃烘箱中进行封框胶固化10min;然后液晶注入,确保无气泡后,利用紫外固化封框胶固化时间约为10min进行封口得到液晶显示元件。
用液晶光电测试仪进行电压保持率VHR、直流电流残余RDC的测试;电压保持率VHR的检测条件为5V,60μs;直流电流残余RDC的检测条件为直流电压5V持续加压3600s,然后移除外加电压,测试600s后器件残余电压值。
将偏光片粘附在液晶显示元件的上板和下板,使得它们的偏振轴彼此垂直。将此液晶单元粘附在背光源上,使用PR755测量在黑色模式下的亮度记为L0;然后在室温下以5V的AC电压驱动液晶单元24h,关闭电压,测量在黑色模式下的亮度L1;按照公式(L0-L1)/L0*100%计算亮度变化情况,根据亮度变化值评估AC残像的水平,亮度变化值越小,取向稳定性越优异,越不易出现残像。检测结果如表1所示。
表1检测结果
检测项目 | VHR(%) | RDC(V) | 亮度变化值(%) |
实施例1 | 99.7 | 0.21 | 3.4 |
实施例2 | 99.5 | 0.26 | 3.7 |
实施例3 | 99.8 | 0.19 | 3.2 |
对比例1 | 95.5 | 0.70 | 13.4 |
对比例2 | 96.3 | 0.68 | 12.0 |
对比例3 | 93.6 | 0.91 | 23.4 |
对比例4 | 97.9 | 0.44 | 9.3 |
对比例5 | 98.1 | 0.41 | 8.5 |
由表1可以看出本发明制得的液晶取向膜具有较高的电压保持率,较低的直流电流残余,且不易出现残像的问题。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (8)
1.一种低残影聚酰亚胺,其特征在于,其原料包括:二胺单体、脂环族二酐单体、含有哌啶基团的添加剂和石墨烯;其中,二胺单体为含有直链烷基的二胺单体和N,N,N',N'-四(对氨基苯基)对苯二胺的混合物;
含有直链烷基的二胺单体、N,N,N',N'-四(对氨基苯基)对苯二胺的摩尔比为9-9.5:0.5-1;
含有直链烷基的二胺单体包括:2,4-二氨基十二烷基苯、2,4-二氨基十六烷基苯中至少一种。
2.根据权利要求1所述低残影聚酰亚胺,其特征在于,含有哌啶基团的添加剂为4-氨基-2,2,6,6-四甲基哌啶、4-氨甲基哌啶中的至少一种。
3.根据权利要求1所述低残影聚酰亚胺,其特征在于,二胺单体、脂环族二酐单体和含有哌啶基团的添加剂的摩尔比为10:10.6-11.1:0.01-0.02。
4.根据权利要求1所述低残影聚酰亚胺,其特征在于,石墨烯占为原料总重的0.05-0.1wt%。
5.根据权利要求1所述低残影聚酰亚胺,其特征在于,脂环族二酐单体包括:1,2,3,4-环戊四羧酸二酐、1,2,4,5-环己烷四甲酸二酐中至少一种。
6.一种如权利要求1-5任一项所述低残影聚酰亚胺的制备方法,其特征在于,包括如下步骤:在惰性气体氛围中,向均匀分散石墨烯的溶剂中,加入含有直链烷基的二胺单体、脂环族二酐单体,进行反应,然后加入N,N,N',N'-四(对氨基苯基)对苯二胺继续反应,最后加入含有哌啶基团的添加剂继续反应得到聚酰胺酸溶液,亚胺化得到低残影聚酰亚胺。
7.根据权利要求6所述低残影聚酰亚胺的制备方法,其特征在于,于室温进行反应8-10h,然后加入N,N,N',N'-四(对氨基苯基)对苯二胺继续30-40min反应,最后加入含有哌啶基团的添加剂继续反应20-30min得到聚酰胺酸溶液。
8.一种如权利要求1-5任一项所述低残影聚酰亚胺在液晶取向膜中的应用。
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