CN115176333A - Protective film forming sheet, method for manufacturing chip with protective film, and laminate - Google Patents

Protective film forming sheet, method for manufacturing chip with protective film, and laminate Download PDF

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Publication number
CN115176333A
CN115176333A CN202180016958.8A CN202180016958A CN115176333A CN 115176333 A CN115176333 A CN 115176333A CN 202180016958 A CN202180016958 A CN 202180016958A CN 115176333 A CN115176333 A CN 115176333A
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Prior art keywords
resin film
curable resin
protective film
wafer
film
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CN202180016958.8A
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Chinese (zh)
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中石康喜
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Lintec Corp
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Lintec Corp
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2429/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
    • C08J2429/14Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
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    • C08J2463/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/04Ingredients treated with organic substances
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    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Mechanical Engineering (AREA)

Abstract

The protective film forming sheet of the present invention includes a support sheet and a curable resin film provided on one surface of the support sheet, the curable resin film being a resin film for forming a protective film on a surface of a wafer by being bonded to the surface of the wafer having convex electrodes and cured, the support sheet having a first region provided with the curable resin film and a second region surrounding the first region and not provided with the curable resin film on the one surface thereof.

Description

Protective film forming sheet, method for manufacturing chip with protective film, and laminate
Technical Field
The present invention relates to a protective film forming sheet, a method for manufacturing a chip with a protective film, and a laminate.
The present application claims priority based on Japanese patent application No. 2020-031717 filed in Japan on 27/2/2020, and the contents thereof are incorporated herein.
Background
Conventionally, when a multi-pin LSI package (large scale integrated circuit package) used for an MPU (microprocessor), a gate array, or the like is mounted on a printed wiring board, a flip chip mounting method has been employed in which a chip having convex electrodes (also referred to as "bumps") made of eutectic solder, high temperature solder, gold, or the like formed on connection pad portions of the chip is used as the chip, and these convex electrodes are brought into contact with corresponding terminal portions on a substrate for mounting the chip so as to face the corresponding terminal portions by a so-called face down method and are fusion/diffusion-bonded.
The chip used in the mounting method can be obtained by singulating (singulating) a wafer having a convex electrode formed on a circuit surface. In this process, for the purpose of protecting the circuit surface and the convex electrodes of the wafer, a curable resin film is generally attached to the circuit surface and the resin film is cured to form a protective film on the circuit surface. The curable resin film is used as a protective film forming sheet of a laminate with a support sheet. The protective film forming sheet is provided with a curable resin film over the entire surface of one surface of the support sheet.
For example, the curable resin film in the protective film forming sheet is bonded to the circuit surface of the wafer while being heated, and then the curable resin film is cut along the outer periphery of the wafer together with the support sheet to remove the region of the protective film forming sheet not bonded to the wafer, and then the support sheet is removed by peeling off the support sheet. Next, the curable resin film is cured to form a protective film on the circuit surface of the wafer. Next, the wafer is divided to be singulated into chips, and the protective film is cut along the outer periphery of the chips, thereby obtaining chips with protective films in which the cut protective films are provided on the circuit surfaces of the chips (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2017/077957
Disclosure of Invention
Technical problems to be solved by the invention
The curable resin film is made of a relatively flexible material so that the curable resin film can be sufficiently adhered to a surface (circuit surface) of the wafer having the convex electrode when the curable resin film is attached to the wafer. However, when a curable resin film softened by heating is attached to a wafer, the following problems occur.
When the heated curable resin film is attached to the surface of the wafer having the convex electrodes, a pressure is applied to the curable resin film. The curable resin film is generally used as a protective film forming sheet of a laminate with a support sheet, and such pressure is transmitted to the curable resin film through the support sheet. In this way, the pressure causes the curable resin film to flow in a direction radially outward of the wafer, i.e., from the region where the curable resin film is bonded to the wafer to the region where the curable resin film is not bonded to the wafer. Accordingly, since the curable resin film flows in the direction from the curable resin film to the wafer, which is orthogonal to the radial direction of the wafer, the thickness of the curable resin film becomes thicker in a region of the curable resin film not bonded to the wafer, particularly in a region near the wafer, than in a region bonded to the wafer.
In this way, the thickened region of the curable resin film becomes an unnecessary portion, and in any manufacturing process of the chip with the protective film, the resin film adheres to the side surface of the wafer or any portion of the manufacturing apparatus of the chip with the protective film, and contaminates the wafer or the chip.
The purpose of the present invention is to provide a protective film-forming sheet that is provided with a resin film for forming a protective film on a surface of a wafer having convex electrodes by being bonded to the surface and cured, and that can prevent the resin film from forming a region having a thickened thickness due to flowing when the resin film is bonded to the surface of the wafer having the convex electrodes.
Means for solving the problems
The present invention adopts the following configuration.
(1) The protective film forming sheet is provided with a support sheet and a curable resin film provided on one surface of the support sheet, wherein the curable resin film is a resin film for forming a protective film on the surface of a wafer by being bonded to the surface of the wafer having convex electrodes and cured, and the support sheet has a first region provided with the curable resin film and a second region surrounding the first region and not provided with the curable resin film on the one surface thereof.
(2) The protective film-forming sheet according to (1), wherein a test piece of the curable resin film having a diameter of 25mm and a thickness of 1mm is strained at a temperature of 90 ℃ and a frequency of 1Hz, a storage modulus of the test piece is measured, and an X value calculated by the following formula is 19 or more and less than 10000 when the storage modulus of the test piece when the strain of the test piece is 1% is Gc1 and the storage modulus of the test piece when the strain of the test piece is 300% is Gc300.
X=Gc1/Gc300
(3) The protective film-forming sheet according to (1) or (2), wherein the thickness of the curable resin film is 25 μm or more.
(4) The protective film-forming sheet according to any one of (1) to (3), wherein the curable resin film has a maximum width of 140 to 150mm, 190 to 200mm, 290 to 300mm, or 440 to 450mm.
(5) The protective film-forming sheet according to any one of (1) to (4), wherein the support sheet has a circular shape.
(6) The protective film-forming sheet according to (5), wherein the support sheet is an adhesive sheet, or has an adhesive layer for a jig along an outer peripheral portion thereof.
(7) The protective film-forming sheet according to any one of (1) to (4), wherein the support sheet is a release film.
(8) The protective film forming sheet according to any one of (1) to (7), wherein grooves are formed on the surface of the wafer as dividing portions of the wafer.
(9) A method for manufacturing a chip with a protective film, comprising: a sticking step of sticking the curable resin film to a surface of a wafer having convex electrodes while heating the curable resin film in the protective film-forming sheet according to any one of (1) to (8); a curing step of forming a protective film on the surface of the wafer by curing the cured resin film after the attachment; and a processing step of obtaining a chip with a protective film, which includes a chip and the protective film provided on the cut chip, by cutting the protective film and dividing the wafer on which the protective film is formed.
(10) The method for manufacturing a chip with a protective film according to (9), wherein a wafer having a plane area of the surface equal to or larger than an area of a bonding surface of the curable resin film to the wafer is used as the wafer, and in the bonding step, the entire bonding surface of the curable resin film is bonded to the surface of the wafer.
(11) The method for manufacturing a chip with a protective film according to (9) or (10), wherein a groove as a dividing portion of the wafer is formed on the surface of the wafer, and in the attaching step, the curable resin film is filled in the groove when the curable resin film is attached to the surface of the wafer.
(12) The method for manufacturing a chip with a protective film according to any one of (9) to (11), wherein in the attaching step, the curable resin film is attached to the surface of the wafer using a roller.
(13) A laminate obtained by: the laminate is obtained by forming a thermosetting resin film on the release-treated surface of a release film, processing the thermosetting resin film into a circular shape together with the release film, and bonding the entire surface of the thermosetting resin film opposite to the side provided with the release film to the surface of a belt-shaped back-grinding tape.
(14) A laminate comprising a release film, a thermosetting resin film provided on a release-treated surface on one side of the release film, and a back-grinding tape provided on a surface of the thermosetting resin film on the side opposite to the release film side, wherein the release film and the thermosetting resin film are both circular in planar shape, the release film and the thermosetting resin film are arranged so that positions of outer peripheral portions in the radial direction of the release film and the thermosetting resin film coincide with each other, and the back-grinding tape is in a tape shape.
Effects of the invention
Fig. 1 is a sectional view for schematically illustrating a technical problem to be solved by the present invention. In general, in a region 622 near the peripheral portion of the region of the curable resin film 62 not bonded to the wafer 9, there is a region having a lower temperature than a region 621 of the curable resin film 62 bonded to the wafer 9 and a region 620 of the curable resin film not bonded to the wafer 9 near the wafer 9. The reason for this is as follows. That is, the region 621 of the curable resin film 62 to be bonded to the wafer 9 is generally heated by using the heated wafer 9 as a heat source, for example, as described later, and the heat is easily conducted to the region 621 and the region 620 to increase the temperature, but the heat is not easily conducted to the region 622 apart from the vicinity of the peripheral portion of the wafer 9. Therefore, the curable resin film 62 flows easily in a region 621 attached to the wafer 9 and a region 620 near the wafer 9 that is not attached to the wafer 9, but the flowability is low in a region 622 near the peripheral portion where the temperature of the curable resin film 62 is low, and the curable resin film 62 flowing so far is deposited. Therefore, as described above, the thickness of the curable resin film 62 becomes thicker in the region of the curable resin film 62 not bonded to the wafer 9, particularly in the region 620 near the wafer 9 than in the region 621 bonded to the wafer 9.
In contrast, when the protective film-forming sheet of the present invention is used, when the curable resin film in the protective film-forming sheet is bonded to the surface of the wafer having the convex electrode, the region of the curable resin film which is not bonded to the wafer can be narrowed or eliminated, and the amount of the curable resin film which flows can be reduced, so that the formation of the region in which the thickness of the curable resin film is increased can be suppressed. Further, since the low-temperature region does not exist in the region near the peripheral portion of the curable resin film, the formation of a region in which the thickness of the curable resin film is increased can be suppressed more highly.
According to the method for manufacturing a chip with a protective film of the present invention, by manufacturing a chip with a protective film using the protective film forming sheet, it is possible to suppress the side surface of the wafer or any part of the manufacturing apparatus of the chip with a protective film from being contaminated by an excess part to which the curable resin film is attached.
Drawings
Fig. 1 is a sectional view for schematically illustrating a technical problem to be solved by the present invention.
Fig. 2 is a plan view schematically showing one example of a protective film forming sheet according to one embodiment of the present invention.
Fig. 3 is a cross-sectional view of the protective film-forming sheet shown in fig. 2 taken along line I-I.
Fig. 4 is a plan view schematically showing another example of the protective film forming sheet according to one embodiment of the present invention.
Fig. 5 is a plan view schematically showing another other example of the protective film forming sheet according to one embodiment of the present invention.
Fig. 6A is a sectional view for schematically illustrating one example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention.
Fig. 6B is a sectional view for schematically illustrating an example of a method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 6C is a sectional view for schematically illustrating one example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention.
Fig. 6D is a sectional view for schematically illustrating an example of a method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 6E is a sectional view for schematically illustrating one example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention.
Fig. 7A is a sectional view for schematically illustrating another example of the method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 7B is a sectional view for schematically illustrating another example of the method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 7C is a sectional view for schematically illustrating another example of the method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 7D is a sectional view for schematically illustrating another example of the method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Fig. 7E is a sectional view for schematically illustrating another example of the method for manufacturing a chip with a protective film according to an embodiment of the present invention.
Detailed Description
< sheet for Forming protective film >)
The sheet for forming a protective film according to one embodiment of the present invention includes a support sheet and a curable resin film provided on one surface of the support sheet, the curable resin film being a resin film for forming a protective film on a surface of a wafer by being attached to the surface of the wafer having a convex electrode and cured, the support sheet having a first region provided with the curable resin film and a second region surrounding the first region and not provided with the curable resin film on the one surface thereof.
In the protective film-forming sheet of the present embodiment, by providing the support sheet with the first region and the second region, it is possible to prevent the formation of a region in which the curable resin film is not attached to the wafer and the thickness of which is increased when the curable resin film in the protective film-forming sheet is attached to the surface of the wafer having the convex electrode.
The protective film-forming sheet of the present embodiment is described below with reference to the drawings.
Fig. 2 is a plan view schematically showing an example of the protective film forming sheet of the present embodiment, and fig. 3 is a sectional view of the protective film forming sheet shown in fig. 2 taken along line I-I.
In the drawings used in the following description, important parts may be enlarged for convenience in order to more easily understand the features of the present invention, but the dimensional ratios of the respective components are not necessarily the same as those in reality.
In the drawings in fig. 3 and subsequent figures, the same reference numerals as in the already-described figures are given to the same constituent elements as those shown in the already-described figures, and detailed description thereof is omitted.
The protective film forming sheet 1 shown here includes a support sheet 11 and a curable resin film 12 provided on one surface 11a of the support sheet 11.
The support sheet 11 has a first region 111a on which the curable resin film 12 is provided and a second region 112a surrounding the first region 111a and on which the curable resin film 12 is not provided, on one surface 11a, that is, on the surface on the curable resin film 12 side. That is, on the support sheet 11, the entire area of the first region 111a is covered with the curable resin film 12, and the entire area of the second region 112a is not covered with the curable resin film 12.
The second region 112a on the one surface 11a of the support sheet 11 is preferably exposed (exposed surface).
The curable resin film is a resin film for forming a protective film on the surface of the wafer having the convex electrodes by being bonded to the surface of the wafer having the convex electrodes and cured.
In this specification, examples of the "wafer" include a semiconductor wafer made of an elemental semiconductor such as silicon, germanium, or selenium, or a compound semiconductor such as GaAs, gaP, inP, cdTe, znSe, or SiC; an insulator wafer made of an insulator such as sapphire or glass.
The circuit is formed on one surface of the wafer, and in this specification, such a surface of the wafer on which the circuit is formed is referred to as a "circuit surface". The surface of the wafer opposite to the circuit surface is referred to as a "back surface". The surface of the wafer having the convex electrode is synonymous with the circuit surface.
The wafer is divided by dicing or the like to form chips. In the present specification, as in the case of a wafer, a surface of a chip on which a circuit is formed is referred to as a "circuit surface", and a surface of the chip opposite to the circuit surface is referred to as a "back surface".
Preferably, the circuit surface of the wafer and the circuit surface of the chip are provided with convex electrodes such as bumps and pillars (pilars). The convex electrode is preferably made of solder.
The support sheet 11 supports a curable resin film 12. More specifically, examples of the support sheet 11 include a support sheet made of only a base material having the above-described support function; stripping the film; an adhesive sheet that can be used by being attached to a wafer when the back surface of the wafer is polished. The adhesive sheet may have a jig such as a ring frame attached to its peripheral portion. Further, by using the support sheet 11 as the release film, a protective film forming sheet can be easily manufactured in some cases as described later.
The planar shape of the support piece 11, i.e., the shape of the one-side surface 11a, is circular. For example, when the support sheet 11 is an adhesive sheet or when a clip adhesive layer is provided along the outer peripheral portion thereof as described later, it is particularly preferable that the planar shape of the support sheet 11 is circular as described above. This is because the planar shape of the support piece 11 is a shape that matches the inner periphery of a jig such as a ring frame that is generally circular, and there is no need to cut the support piece 11 after the attachment to the jig such as the ring frame.
The planar shape of the curable resin film 12, that is, the shape of the surface 12a opposite to the support sheet 11 side is circular. In addition, for the purpose of recognition or alignment (alignment) of the crystal orientation, a positioning edge or a positioning groove may be provided on the wafer so that the shape of the wafer is not perfectly circular in some cases, but the curable resin film 12 may be provided with a planar shape matching the shape.
When the protective film forming sheet 1 is viewed from above on the curable resin film 12 side of the protective film forming sheet 1 in a plan view, the support sheet 11 and the curable resin film 12 are concentrically arranged with their center positions aligned.
Maximum value of width of support piece 11 (i.e. diameter D) 11 ) Larger than the maximum value of the width of the curable resin film 12 (i.e., diameter D) 12 )。
The planar shape and size of the first region 111a of the support sheet 11 are the same as those of the curable resin film 12, and the diameter is D 12 Is circular.
The planar shape of the second region 112a of the support sheet 11 is a width (D) 11 -D 12 ) A/2 ring.
The area of the surface 12a of the curable resin film 12 opposite to the support sheet 11 (the area of the first region 111a of the support sheet 11) is preferably equal to or less than the area of the back surface of the wafer to which the curable resin film 12 is to be attached (the planar area of the surface of the wafer having the convex electrode). By selecting such a curable resin film 12, when the curable resin film 12 in the protective film forming sheet 1 is bonded to the surface having the convex electrode of the wafer, the amount of protrusion of the curable resin film 12 from the second region 112a of the support sheet 11 can be further reduced, and as a result, formation of a region in which the thickness of the curable resin film 12 is increased without being bonded to the wafer can be further suppressed.
The maximum value (diameter) D of the width of the curable resin film 12 is preferably 12 The maximum diameter (e.g., diameter) of the wafer to which the curable resin film 12 is to be attached is not more than the maximum diameter.
Examples of the wafer having a circular planar shape include wafers having diameters of 6 inches, 8 inches, 12 inches, and 18 inches. As a preferable example of the curable resin film 12 to be bonded to any one of these wafers, for example, a maximum value (diameter) D of the width is mentioned 12 A curable resin film having a thickness of 140 to 150mm, 190 to 200mm, 290 to 300mm or 440 to 450mm.
Preferably, the width ((D) of the second region 112 a) on the one-side surface 11a of the support sheet 11 11 -D 12 ) /2) is the maximum value (D) of the width of the first region 111a 12 ) 0.05 to 0.4 times, more preferably 0.07 to 0.3 times of the total amount of the compound (A). When the support sheet 11 is an adhesive sheet, the width of the second region 112a is not less than the lower limit, or the support sheet has the above-described widthIn the case of the adhesive layer for a jig, when the support sheet 11 is attached to a jig such as a ring frame, the possibility of the curable resin film 12 coming into contact with the jig can be reduced. By setting the width of the second region 112a to the upper limit or less, it is possible to suppress the area of the second region 112a from becoming excessively large.
A groove may be formed on the surface having the convex electrode of the wafer to be bonded with the curable resin film 12, and the groove may be a dividing portion of the wafer when the wafer is divided and singulated into chips. That is, the curable resin film 12 may be a resin film for forming a protective film on a surface of a wafer, which has convex electrodes and on which grooves are further formed as dividing portions of the wafer, by adhering the surface to the wafer and curing the surface.
The grooves are formed on the surface of the wafer having the convex electrodes in a shape corresponding to the size and shape of the target chip.
For example, a wafer having the groove formed in the surface having the convex electrode is polished until the groove appears on the surface (back surface) opposite to the surface, whereby a chip divided into portions in the groove can be obtained. At this time, since the curable resin film 12 is attached and the grooves are filled with the curable resin film 12, as a result, if the chips are in a state of being filled with the protective film which is a cured product of the curable resin film 12, the protective film between the chips can be cut after the chips are obtained, thereby obtaining chips with protective films which have the protective films on not only the surfaces having the convex electrodes but also the 4 side surfaces. A chip with such a side surface also protected can obtain a higher protective effect based on the protective film.
The support sheet 11 and the curable resin film 12 may be formed of one layer (single layer) or may be formed of a plurality of layers of two or more layers. When the support sheet 11 or the curable resin film 12 is composed of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
In the present specification, the phrase "a plurality of layers may be the same or different from each other" means "all the layers may be the same or different from each other, or only some of the layers may be the same", and "a plurality of layers are different from each other" means "at least one of the constituent material and the thickness of each layer is different from each other", without being limited to the case of the support sheet 11 and the curable resin film 12.
Thickness T of curable resin film 12 12 The thickness is not particularly limited, but is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 25 μm or more. By making T 12 As described above, when the curable resin film 12 is attached to the surface of the wafer having the convex electrode and the groove, the groove can be filled with the curable resin film 12 more highly without a gap. Further, the base portion of the wafer in the vicinity of the circuit surface of the convex electrode can be covered more highly without a gap. That is, the curable resin film 12 is more advantageous in filling the grooves and covering the base portions of the convex electrodes.
Thickness T of curable resin film 12 12 The upper limit of (3) is not particularly limited. For example, T is set to avoid excessively increasing the thickness of the curable resin film 12 12 Preferably 200 μm or less, more preferably 130 μm or less, and further preferably 80 μm or less.
In the present specification, the "thickness of the curable resin film" refers to the thickness of the entire curable resin film, and for example, the thickness of the curable resin film composed of a plurality of layers refers to the total thickness of all the layers constituting the curable resin film.
In the protective film-forming sheet 1, it is preferable that a test piece of the curable resin film 12 having a diameter of 25mm and a thickness of 1mm is strained under conditions of a temperature of 90 ℃ and a frequency of 1Hz, a storage modulus of the test piece is measured, and an X value calculated by the following formula is 19 or more and less than 10000 when the storage modulus of the test piece when the strain of the test piece is 1% is Gc1 and the storage modulus of the test piece when the strain of the test piece is 300% is Gc300. The curable resin film 12 is soft and suitable for use in bonding to a surface having a convex electrode of a wafer such as a wafer and a bonding object having a concave-convex surface of the groove.
X=Gc1/Gc300
The test piece is in the shape of a film and has a circular planar shape.
The test piece may be a single layer of the curable resin film 12 having a thickness of 1mm, but in terms of ease of production, a laminated film in which a plurality of single layers of the curable resin films 12 having a thickness of less than 1mm are laminated is preferable.
The thicknesses of the plurality of single layers of the curable resin films 12 constituting the laminate film may be the same or different, or may be partially the same, but are preferably the same in terms of ease of production.
In the present specification, the "storage modulus of a test piece" means "the storage modulus of a test piece corresponding to strain when a test piece of a curable resin film having a diameter of 25mm and a thickness of 1mm is strained under conditions of a temperature of 90 ℃ and a frequency of 1 Hz", and is not limited to Gc1 and Gc300.
When the curable resin film 12 is bonded to the surface of the wafer having the convex electrodes, the upper portions of the convex electrodes protrude through the curable resin film 12. The curable resin film 12 spreads between the convex electrodes so as to cover the convex electrodes, and covers the surfaces of the convex electrodes, particularly the surfaces of the wafer in the vicinity of the surfaces having the convex electrodes, while closely adhering to the surfaces having the convex electrodes, thereby embedding the base portions of the convex electrodes. In this state, the curable resin film 12 can be prevented from remaining on the top of the convex electrode, including the top. Therefore, it is naturally possible to suppress the protective film 12' which is a cured product of the curable resin film 12 from adhering to the upper portion of the convex electrode. Further, when the groove is formed on the surface, there is a large difference in the degree of strain of the curable resin film 12 between an intermediate stage in which the curable resin film 12 starts to intrude into the groove and a final stage in which the curable resin film 12 covers the base portion of the convex electrode and the curable resin film 12 sufficiently fills the groove. More specifically, the strain of the curable resin film 12 in the intermediate stage is large, and the strain of the curable resin film 12 in the final stage is small.
The excellent effects described above can be achieved by using Gc1 as the storage modulus when the strain is small and Gc300 as the storage modulus when the strain is large, and defining the X value (= Gc1/Gc 300) to be 19 or more and less than 10000 so that Gc1 is high and Gc300 is low for the curable resin film 12.
In order to further improve the effect of covering the base portion of the convex electrode with the curable resin film 12, the X value is preferably 5000 or less, more preferably 2000 or less, still more preferably 1000 or less, and particularly preferably 500 or less, and is, for example, in any range of 300 or less, 100 or less, and 70 or less.
The value X is preferably 25 or more, more preferably 30 or more, further preferably 40 or more, particularly preferably 50 or more, and may be 60 or more, for example, in terms of further improving the effect of suppressing the curable resin film 12 from remaining on the upper portions of the convex electrodes and the effect of sufficiently filling the grooves with the curable resin film 12.
The curable resin film 12, gc1 is not particularly limited as long as the X value can be 19 or more and less than 10000.
However, gc1 is preferably 1 × 10 in terms of easily increasing the X value 4 ~1×10 6 Pa, more preferably 3X 10 4 ~7×10 5 Pa, more preferably 5X 10 4 ~5×10 5 Pa。
The curable resin film 12, gc300 is not particularly limited as long as the X value can be set to 19 or more and less than 10000.
However, in order to further improve the effect of sufficiently filling the grooves with the curable resin film 12, gc300 is preferably less than 15000Pa, more preferably 10000Pa or less, further preferably 5000Pa or less, particularly preferably 4000Pa or less, and may be 3500Pa or less, for example.
In order to further improve the effect of the curable resin film 12 covering the base portion of the convex electrode, gc300 is preferably 100Pa or more, more preferably 500Pa or more, and further preferably 1000Pa or more.
The curable resin film 12 preferably satisfies both Gc1 and Gc300 in any numerical value range described above.
The storage modulus of the curable resin film 12 is not limited to Gc1 and Gc300, and can be adjusted by adjusting the components and the content of the curable resin film 12, for example. More specifically, for example, the Gc300 is adjusted to an appropriate value by using polyvinyl acetal or the like which is the polymer component (a) or the polymer (b) having no energy ray-curable group described later, and the X value is easily adjusted to an appropriate value. Further, the Gc1 is adjusted to an appropriate value by adjusting the kind, content, or the like of the additive (I) described later, and further, the X value is easily adjusted to an appropriate value. Further, by increasing the content of either one of the filler (D) and the additive (I) or both of the filler (D) and the additive (I), which will be described later, it is easy to adjust Gc1 to a large value, and further, it is easy to adjust X to a large value.
The components contained in the curable resin film 12 and the like will be separately described.
The thickness of the support sheet 11 is not particularly limited, but is preferably 50 to 850 μm, and more preferably 75 to 700 μm. By setting the thickness of the support sheet 11 to the lower limit or more, the support sheet 11 can be further made high in strength. By setting the thickness of the support sheet 11 to the above upper limit or less, the flexibility of the support sheet 11 can be improved, and the operability can be further improved.
In the present specification, the "thickness of the support sheet" refers to the thickness of the entire support sheet, and for example, the thickness of the support sheet composed of a plurality of layers refers to the total thickness of all the layers constituting the support sheet.
Fig. 4 is a plan view schematically showing another example of the protective film forming sheet of the present embodiment.
The protective film forming sheet 2 shown here includes a support sheet 21 and a curable resin film 12 provided on one surface 21a of the support sheet 21.
The support sheet 21 has a strip shape, and the plurality of curable resin films 12 are arranged in a row in the longitudinal direction thereof. The support sheet 21 is the same as the support sheet 11 in the protective film forming sheet 1 shown in fig. 2 to 3, except that the planar shape and the size are different as described above. For example, the thickness of the support sheet 21 is the same as that of the support sheet 11.
The protective film forming sheet 2 is the same as the protective film forming sheet 1 shown in fig. 2 to 3, except that the support sheet 21 is provided instead of the support sheet 11 and the number of the curable resin films 12 is different.
The protective film-forming sheet 2 is suitable for continuously attaching the curable resin film 12 to the surfaces of the plurality of wafers having the convex electrodes.
The support sheet 21 has a plurality of first regions 211a on one surface 21a thereof, that is, on the surface on the curable resin film 12 side, in which the curable resin films 12 are provided, and a second region 212a surrounding the first regions 211a and in which the curable resin films 12 are not provided. That is, on the support sheet 21, the entire area of each first region 211a is covered with the curable resin film 12, and the entire area of the second region 112a is not covered with the curable resin film 12.
The second region 212a on the one surface 21a of the support sheet 21 is preferably exposed (exposed surface).
The support piece 21 has a planar shape, i.e., the shape of the one surface 21a is rectangular, and preferably has a strip shape.
When the protective film-forming sheet 2 is viewed from above on the curable resin film 12 side, all the curable resin films 12 are provided at equal intervals on the support sheet 21.
All the curable resin films 12 in the protective film-forming sheet 2 have the same shape and size. All the curable resin films 12 are disposed at the same position in the width direction of the protective film forming sheet 2 (the direction orthogonal to the longitudinal direction), and are aligned at the intermediate position in the width direction of the protective film forming sheet 2.
Maximum value D of width of support piece 21 21 Larger than the maximum value of the width of the curable resin film 12 (i.e., the diameter D) 12 ). Here, since the width of the support piece 21 is constant in the longitudinal direction of the support piece 21, the maximum value of the width of the support piece 21 means only the width of the support piece 21.
The planar shape and size of the first region 211a of the support sheet 21 are the same as those of the curable resin film 12The surface shape and size are the same, and the diameter is D 12 Is circular.
The planar shape of the second region 212a of the support sheet 21 is a rectangle from which a row of a plurality of diameters D is removed 12 The round shape of (2).
On the surface 21a on the one side of the support sheet 21, L is a minimum value of a line segment connecting a point on the outer peripheral portion of the first region 211a and a point on the outer peripheral portion of the support sheet 21 1 And the distance between two adjacent curable resin films 12 is L 2 When preferred, L is 1 And L 2 The smaller value of/2 is the maximum value (D) of the width of the first region 211a 12 ) 0.03 to 0.25 times, more preferably 0.05 to 0.2 times of the amount of the compound (A). The value may be adjusted as appropriate according to the specification of an apparatus for continuously attaching the curable resin film 12 to the surface having the convex electrode of the plurality of wafers. Here, although L is shown 1 And (D) 21 -D 12 ) The case of/2 being equal, but representing L 1 The expression (c) may be different depending on the arrangement position of the first region 211a on the one surface 21a of the support sheet 21 or the size of the first region 211 a.
The protective film forming sheet of the present embodiment is not limited to the protective film forming sheet shown in fig. 2 to 4, and may be a protective film forming sheet obtained by changing, deleting, or adding a part configuration to the protective film forming sheet shown in fig. 2 to 4.
For example, as shown in fig. 5, in the second region 112a of the one-side surface 11a of the support sheet 11 in the protective film forming sheet 1 shown in fig. 2, a band-shaped (in this case, annular) adhesive layer 13 for a jig may be provided along the outer periphery of the support sheet 11. The jig adhesive layer 13 is a layer for fixing the protective film forming sheet 1 to a jig such as a ring frame.
Similarly, in the second region 212a on the one-side surface 21a of the support sheet 21 in the protective film forming sheet 2 shown in fig. 4, an annular adhesive layer for a jig may be provided so as not to contact the curable resin film 12, so as to surround the first region 211a for each curable resin film 12.
For example, in the case where the support sheet 11 is an adhesive sheet as the protective film forming sheet 1 shown in fig. 2, a jig adhesive layer (for example, a jig adhesive layer 13 shown in fig. 5) may be further provided on the adhesive layer of the adhesive sheet.
For example, in the protective film forming sheet 1 shown in fig. 2 and the protective film forming sheet 2 shown in fig. 4, the planar shape of the curable resin film 12 is circular, but the planar shape of the curable resin film is not limited thereto, and may be non-circular such as a quadrangle.
For example, in the protective film forming sheet 2 shown in fig. 4, some or all of the curable resin films 12 may not be provided at equal intervals from each other, and the shapes and sizes of some or all of the curable resin films 12 may be different. In addition, the arrangement position of part or all of the curable resin film 12 in the width direction of the protective film forming sheet 2 may be different.
The number of the curable resin films 12 is, for example, 3 or more in the protective film forming sheet 2 shown in fig. 4, but the number of the curable resin films 12 is not limited thereto.
For example, the protective film forming sheet 1 shown in fig. 2 or the protective film forming sheet 2 shown in fig. 4 may be provided with a support sheet on both surfaces (a surface on the support sheet 11 side or a surface on the support sheet 21 side, and a surface 12a opposite to these surfaces) of the curable resin film 12. As an example, in the protective film forming sheet 2 shown in fig. 4, the support sheet 11 shown in fig. 2 may be provided on a surface 12a of the curable resin film 12 on the opposite side to the surface on the support sheet 21 side. In this case, it is preferable that the support sheet 21 is a release sheet, and the support sheet 11 is an adhesive sheet or a support sheet having the pressure-sensitive adhesive layer for a clip (for example, the pressure-sensitive adhesive layer 13 for a clip shown in fig. 5). By using the protective film forming sheet in this form, the protective film forming sheet 1 shown in fig. 2 can be easily and continuously supplied. In the protective film forming sheet of this embodiment, the support sheet 11 and the support sheet 21 each have a second region where the curable resin film 12 is not provided. However, the support sheet 11 generally functions as a support sheet having the technical effects of the present invention.
As an example of the protective film-forming sheet of the present embodiment, a laminate obtained by: the laminate is obtained by forming a thermosetting resin film on the release-treated surface of a release film, processing the thermosetting resin film into a circular shape together with the release film, and bonding the entire surface of the thermosetting resin film opposite to the side provided with the release film to the surface of a belt-shaped back-grinding tape.
The laminate includes a laminated structure of a support sheet 21 and a curable resin film 12 in the protective film forming sheet 2 shown in fig. 4. In this laminate, the back-grinding tape corresponding to the support sheet 21 has the second region, but the release film does not have the second region.
As an example of the protective film forming sheet of the present embodiment, there is a laminate including a release film, a thermosetting resin film provided on a release-treated surface on one side of the release film, and a back grinding tape provided on a surface on the opposite side to the release film side of the thermosetting resin film, wherein the release film and the thermosetting resin film are both circular in planar shape, the release film and the thermosetting resin film are arranged so that positions of outer peripheral portions in a radial direction of the release film and the thermosetting resin film coincide with each other, and the back grinding tape is in a tape shape. In this laminate, the back-grinding tape corresponding to the support sheet has the second region, but the release film does not have the second region.
As an example of the protective film forming sheet of the present embodiment, there is a protective film forming sheet including a support sheet and a curable resin film provided on one surface of the support sheet, the curable resin film being a resin film for forming a protective film on a surface of a wafer by being bonded to the surface having convex electrodes of the wafer and being cured, the support sheet having a first region provided with the curable resin film on the one surface thereof and a second region surrounding the first region and not provided with the curable resin film (wherein a laminate obtained by forming a thermosetting resin film on a release-treated surface of a release film, processing the thermosetting resin film into a circular shape together with the release film, and bonding the entire surface of the thermosetting resin film on the surface opposite to the side provided with the release film to the surface of a tape-like back-grinding tape is excluded).
As another example of the protective film forming sheet of the present embodiment, there is a protective film forming sheet including a support sheet and a curable resin film provided on one surface of the support sheet, the curable resin film being a resin film for forming a protective film on the surface of a wafer by being attached to the surface of the wafer having convex electrodes and being cured, the support sheet having, on the one surface thereof, a first region provided with the curable resin film and a second region surrounding the first region and not provided with the curable resin film (wherein a laminate including a release film, a thermosetting resin film provided on a release-treated surface of one side of the release film, and a back-grinding tape provided on a surface of the thermosetting resin film opposite to the release film side is not included, the release film and the thermosetting resin film both having a circular planar shape in the outer circumferential portions thereof, the release film and the thermosetting resin film being arranged so that positions in the radial directions of the release film and the thermosetting resin film coincide with each other, the back-grinding tape being a strip-like laminate).
The curable resin film constituting the protective film-forming sheet of the present embodiment is either thermosetting or energy ray-curable, and may have both thermosetting and energy ray-curable characteristics.
In the present specification, "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of the energy ray include ultraviolet rays, radiation, and electron beams. As the ultraviolet rays, for example, irradiation can be performed by using a high-pressure mercury lamp, a fusion lamp (fusion lamp), a xenon lamp, a black light lamp, an LED lamp, or the like as an ultraviolet ray source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.
In the present specification, "energy ray-curable" refers to a property of curing by irradiation with an energy ray.
The curable resin film can be formed by using a composition for forming a curable resin film containing a constituent material thereof. For example, the curable resin film can be formed by applying the curable resin film-forming composition to a surface to be formed with the curable resin film and drying the composition as necessary. The content ratio of the components that do not vaporize at normal temperature in the curable resin film-forming composition is generally the same as the content ratio of the components in the curable resin film. In the present specification, "normal temperature" means a temperature at which cooling or heating is not particularly performed, that is, a normal temperature, and includes, for example, a temperature of 15 to 25 ℃.
The coating of the curable resin film-forming composition may be carried out by a known method, and examples thereof include various coating machines such as a blade coater, a bar coater, a gravure coater, a roll coater, a curtain coater, a die coater, a knife coater, a screen coater, a meyer bar coater, and a kiss coater.
The drying conditions of the curable resin film-forming composition are not particularly limited, regardless of whether the curable resin film is thermosetting or energy ray-curable. However, when the curable resin film-forming composition contains a solvent described later, it is preferably dried by heating. The solvent-containing composition for forming a curable resin film is preferably dried by heating at 70 to 130 ℃ for 10 seconds to 5 minutes, for example. However, it is preferable that the composition for forming a thermosetting resin film is dried by heating so that the composition itself and a thermosetting resin film formed from the composition are not thermally cured.
Examples of the thermosetting resin film include a thermosetting resin film containing a polymer component (a) and a thermosetting component (B).
Examples of the composition for forming a thermosetting resin film include a composition (III) for forming a thermosetting resin film containing a polymer component (a) and a thermosetting component (B) (in the present specification, this may be simply referred to as "composition (III)") and the like.
From the viewpoint of easily adjusting the value of X to an appropriate value by adjusting Gc300 to an appropriate value as described above, the polymer component (a) is preferably polyvinyl acetal.
As the polyvinyl acetal in the polymer component (a), known polyvinyl acetal can be cited. Among these, preferable polyvinyl acetals include, for example, polyvinyl formal and polyvinyl butyral, and more preferable polyvinyl butyral.
Examples of the thermosetting component (B) include epoxy thermosetting resins composed of an epoxy resin (B1) and a thermosetting agent (B2); a polyimide resin; unsaturated polyester resins, and the like.
The thermosetting resin film and the composition (III) may further contain other components that do not belong to either the polymer component (a) or the thermosetting component (B).
Examples of the other components include a curing accelerator (C), a filler (D), a coupling agent (E), a crosslinking agent (F), an energy ray-curable resin (G), a photopolymerization initiator (H), an additive (I), and a solvent.
By adjusting the content of the filler (D), the X value can be adjusted more easily.
The filler (D) is either an organic filler or an inorganic filler, but is preferably an inorganic filler. Examples of preferable inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like; beads obtained by spheroidizing these inorganic fillers; surface modifications of these inorganic filler materials; single crystal fibers of these inorganic filler materials; glass fibers, and the like.
Among them, the inorganic filler is preferably silica or alumina.
From the viewpoint of further improving the filling property of the thermosetting resin film into the grooves of the wafer, the content of the filler (D) in the thermosetting resin film and the composition (III) is preferably 5 to 45% by mass, more preferably 5 to 40% by mass, and still more preferably 5 to 30% by mass, relative to the total content of all the components except the solvent.
Examples of the additive (I) include a colorant, a plasticizer, an antistatic agent, an antioxidant, a gettering agent, a rheology control agent (rheology control agent), a surfactant, and silicone oil.
In order to adjust the value of X easily by appropriately adjusting Gc1, preferable additives (I) include a rheology control agent, a surfactant, and silicone oil.
More specifically, examples of the rheology control agent include polyhydroxycarboxylic acid esters, polycarboxylic acids, and polyamide resins.
Examples of the surfactant include modified siloxane and acrylic polymer.
Examples of the silicone oil include aralkyl-modified silicone oil and modified polydimethylsiloxane, and examples of the modifying group include aralkyl; polar groups such as hydroxyl groups; groups having an unsaturated bond such as vinyl group and phenyl group.
From the viewpoint of easier adjustment of the value of X, the content of the additive (I) in the thermosetting resin film and the composition (III) is preferably 0.5 to 10% by mass, more preferably 0.5 to 7% by mass, and still more preferably 0.5 to 5% by mass, with respect to the total content of all components except the solvent.
The thermosetting resin film and the composition (III) may contain only one kind of each of the polymer component (a), the thermosetting component (B), the curing accelerator (C), the filler (D), the coupling agent (E), the crosslinking agent (F), the energy ray-curable resin (G), the photopolymerization initiator (H), the additive (I), the solvent, and the like, or may contain two or more kinds of each of them, and when two or more kinds of them are contained, the combination and ratio thereof may be arbitrarily selected.
Examples of the energy ray-curable resin film include an energy ray-curable resin film containing an energy ray-curable component (a).
Examples of the composition for forming an energy ray-curable resin film include a composition (IV) for forming an energy ray-curable resin film containing an energy ray-curable component (a) (in the present specification, this may be abbreviated as "composition (IV)") and the like.
The energy ray-curable resin film and the composition (IV) may further contain another component not belonging to the energy ray-curable component (a).
Examples of the other components include a polymer (b) having no energy ray-curable group, a thermosetting component, a filler, a coupling agent, a crosslinking agent, a photopolymerization initiator, an additive, and a solvent.
From the viewpoint of adjusting the Gc300 to an appropriate value and further easily adjusting the X value to an appropriate value, the polymer (b) having no energy ray-curable group is preferably polyvinyl acetal.
The thermosetting component, the filler, the coupling agent, the crosslinking agent, the photopolymerization initiator, the additive, and the solvent in the energy ray-curable resin film and the composition (IV) are the same as those of the thermosetting component (B), the filler (D), the coupling agent (E), the crosslinking agent (F), the photopolymerization initiator (H), the additive (I), and the solvent in the thermosetting resin film and the composition (III) described above.
The energy ray-curable resin film and the energy ray-curable component (a), the polymer (b) having no energy ray-curable group, the thermosetting component, the filler, the coupling agent, the crosslinking agent, the photopolymerization initiator, the additive, the solvent, and the like contained in the composition (IV) may be each one type, two or more types, or in the case of two or more types, a combination and a ratio thereof may be arbitrarily selected.
The support sheet constituting the protective film forming sheet of the present embodiment may be a known support sheet.
For example, various resins can be used as the constituent material of the support sheet composed of only the base material.
Examples of the resin include polyethylene; polyolefins other than polyethylene, such as polypropylene; ethylene copolymers (copolymers obtained using ethylene as a monomer); vinyl chloride-based resins (resins obtained using vinyl chloride as a monomer); polystyrene; a polycycloolefin; a polyester; copolymers of two or more of said polyesters; poly (meth) acrylates; polyurethane (polyurethane); polyurethane acrylate (polyurethane acrylate); a polyimide; a polyamide; a polycarbonate; a fluororesin; a polyacetal; modified polyphenylene ether; polyphenylene sulfide; polysulfones; polyether ketones, and the like.
Examples of the resin include polymer alloys such as a mixture of the polyester and a resin other than the polyester.
Examples of the resin include crosslinked resins obtained by crosslinking one or more of the above-exemplified resins; one or two or more kinds of modified resins such as ionomers among the resins exemplified above are used.
In the present specification, "(meth) acrylic acid" is a concept including both "acrylic acid" and "methacrylic acid". Similar terms to (meth) acrylic acid are also the same, and for example, "(meth) acrylate" is a concept including both "acrylate" and "methacrylate".
The resin constituting the support sheet composed of only the base material may be one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio thereof may be arbitrarily selected.
In view of versatility and in view of imparting heat resistance to a support sheet when a curable resin film in a state of being provided with the support sheet is thermally cured in a method for producing a chip with a protective film to be described later, and easily preventing warpage of a wafer, the resin is preferably a polyester such as polyethylene terephthalate or polybutylene terephthalate; polypropylene, and the like. In this case, the support sheet (base material) may be a single layer or a plurality of layers of two or more layers as long as it has 1 or 2 or more layers selected from the group consisting of a layer containing polyester and a layer containing polypropylene film.
The support sheet composed only of the base material and containing the resin can be produced by molding a resin composition containing the resin.
The release film serving as the support sheet may be made of a material having releasability itself, or may be a release film in which a curable resin film is easily peeled by a layer having releasability. The release film may be the same as the support sheet composed only of the base material, except that the release film is composed of a material having releasability itself or a layer having releasability on the base material.
Examples of the material having releasability include a fluororesin.
Examples of the easily releasable layer include layers made of release agents such as silicone (silicone) release agents and alkyd release agents.
The adhesive sheet as the support sheet generally includes a film-shaped or sheet-shaped substrate and an adhesive layer, and may further include an intermediate layer between the substrate and the adhesive layer for embedding the convex electrode.
Examples of the base material in the pressure-sensitive adhesive sheet include the same materials as those of the support sheet composed of only the base material.
Examples of the adhesive contained in the adhesive layer in the adhesive sheet include acrylic adhesives, rubber adhesives, and urethane adhesives. The adhesive layer may be an adhesive layer whose adhesiveness is further lowered by irradiation with an energy ray.
Examples of the component contained in the intermediate layer in the adhesive sheet include a cured product of a urethane (meth) acrylate compound, a thermoplastic polyolefin resin (a thermoplastic resin having a structural unit derived from an olefin), and the like.
The support sheet may also be a back grind tape. That is, the back side polishing of the wafer described later may be performed in a state where the support sheet is attached to the curable resin film.
The support sheet may not be bonded to the curable resin film when the back surface of the wafer is polished. For example, the support sheet used in the manufacturing method 2 in the manufacturing method of a chip with a protective film described later can be removed before the curing step, and in this case, a back-grinding tape is attached to the curable resin film separately when the back surface of the wafer is ground. Therefore, the support sheet does not necessarily have the characteristics required as a back-grinding tape. Even if the curing step is accompanied by heating of the curable resin film and the support sheet is deformed by heating, or the support sheet has an adhesive agent layer and the adhesive agent layer is softened by heating, the support sheet having such properties can be removed before the curing step, thereby avoiding the occurrence of the deformation, softening, and the like.
The pressure-sensitive adhesive layer for a jig may have, for example, a single-layer structure containing a pressure-sensitive adhesive component, or may have a multilayer structure including a sheet as a core material and pressure-sensitive adhesive component-containing layers provided on both surfaces of the sheet. Examples of the layer containing a pressure-sensitive adhesive component include the same layers as the pressure-sensitive adhesive layer in the pressure-sensitive adhesive sheet.
< method for producing sheet for forming protective film >)
The protective film-forming sheet of the present embodiment can be produced by sequentially laminating the above-described layers (support sheet, curable resin film, adhesive layer for a jig, and the like) so as to have a corresponding positional relationship. The formation method of each layer is as described above. Further, the respective layers can be adjusted in shape at any timing before and after they are laminated as necessary.
For example, in the production of the protective film-forming sheet, the curable resin film can be laminated on the support sheet by applying the curable resin film-forming composition to one surface of the support sheet and drying the composition as necessary.
In addition, when the protective film-forming sheet is produced, the curable resin film can be formed on a release film by using the release film as a support sheet, applying the curable resin film-forming composition on one surface (release-treated surface) of the release film, and drying the composition as necessary, thereby obtaining the protective film-forming sheet. In the case where the release film is used as the support sheet as described above, it is preferable that the protective film-forming sheet is easily obtained by forming the curable resin film on substantially the entire surface of the release film, then cutting the curable resin film into the same shape (for example, a circular shape) as the shape assumed as the first region of the release film, and removing the excess curable resin film to generate the second region. Further, in the case of using a strip-shaped release film as the support sheet, it is preferable in that the protective film forming sheet 2 shown in fig. 4 can be easily obtained by continuously removing the excess curable resin film to create the second region. The protective film-forming sheet 1 shown in fig. 2 is preferably obtained in a state of being continuously provided on a strip-shaped release film by laminating an exposed surface (a surface on the opposite side to the release film side) of the curable resin film of the protective film-forming sheet 2 and an adhesive surface (for example, an exposed surface of the adhesive agent layer) of a support sheet as an adhesive sheet, then cutting the adhesive sheet into a shape larger than a concentric circle of the curable resin film 12, and continuously removing an excess adhesive sheet. In this case, the release film on the curable resin film can be removed when the protective film-forming sheet is used.
< method for producing chip with protective film >)
The method for manufacturing a chip with a protective film according to an embodiment of the present invention includes: a bonding step of bonding the curable resin film to a surface of a wafer having convex electrodes while heating the curable resin film in the protective film forming sheet according to the embodiment of the present invention; a curing step of forming a protective film on the surface of the wafer by curing the cured resin film after the attachment; and a processing step of obtaining a chip with a protective film, which includes a chip and the protective film provided on the cut chip, by cutting the protective film and dividing the wafer on which the protective film is formed.
According to the method for manufacturing a chip with a protective film of the present embodiment, it is possible to suppress formation of a region in which the curable resin film is not attached to the wafer and the thickness is increased in the attaching step. As a result, it is possible to prevent the side surface of the wafer or an unnecessary portion of the curable resin film from being attached to an arbitrary portion of the manufacturing apparatus of the chip with the protective film in the step after the attachment step, thereby preventing contamination.
Fig. 6A to 6E are sectional views for schematically illustrating one example of the method for manufacturing a chip with a protective film according to the present embodiment.
Here, the case of using the protective film forming sheet 1 shown in fig. 2 to 3 is described as an example, but the same principle applies to the method for manufacturing a chip with a protective film when the protective film forming sheet 2 shown in fig. 4 or the other protective film forming sheet of the present embodiment is used.
In the sticking step, the curable resin film 12 in the protective film-forming sheet 1 is heated, and the curable resin film 12 is stuck to the surface 9a of the wafer 9 having the convex electrodes 91. As a result, as shown in fig. 6A, a wafer 101 with a protective film forming sheet having the following configuration was obtained: the wafer 9 is provided with a protective film forming sheet 1 and a surface 12a of a curable resin film 12 provided on the protective film forming sheet 1 on the side opposite to the support sheet 11, and the base of a convex electrode 91 on the wafer 9 in the vicinity of the surface 9a is covered with the curable resin film 12. Although fig. 6A shows a state in which the curable resin film 12 covers the top portions of the convex electrodes 91, the top portions of the convex electrodes 91 may be exposed without being covered with the curable resin film 12. When the support sheet 11 is an adhesive sheet or a support sheet having a clip adhesive layer, a clip (not shown) such as a ring frame may be attached to the peripheral portion of the support sheet 11.
The support sheet 11 of the protective film forming sheet 1 has a second region 112a on one surface 11a thereof. Therefore, when the curable resin film 12 in the protective film forming sheet 1 is bonded to the surface 9a of the wafer 9 having the convex electrode, the region of the curable resin film 12 not bonded to the wafer 9 can be narrowed or eliminated, and the amount of the curable resin film that flows can be reduced. In addition, the temperature does not become low in the region near the peripheral portion of the region of the curable resin film 12 not bonded to the wafer 9. As a result, even if the curable resin film 12 is subjected to pressure during bonding in the thickness direction thereof and flows radially outward of the wafer 9 (leftward, rightward, or leftward and rightward in fig. 6A), that is, from the region bonded to the wafer 9 (on the first region 111a of the support sheet 11) to the region not bonded to the wafer 9 (on the second region 112a of the support sheet 11), the formation of a region in which the thickness of the curable resin film 12 is increased in the second region 112a of the support sheet 11 can be suppressed.
On the surface 9a of the wafer 9 having the convex electrode 91, a plurality of grooves 90 are formed, and the grooves 90 are divided portions of the wafer 9 when the wafer 9 is divided and singulated into chips. In this case, in the attaching step, when the curable resin film 12 is attached to the surface 9a of the wafer 9, the curable resin film 12 is filled in a part or all of the grooves 90. Fig. 6A shows a state in which the entire region of the groove 90 is filled with the curable resin film 12.
The grooves 90 can be formed by forming cuts in the thickness direction of the wafer 9 from the surface 9a of the wafer 9 by a known dicing method, for example. This method is sometimes referred to in the art as "half-cut". Examples of the cutting method include blade cutting, plasma cutting, and the like, and are not particularly limited.
The depth of the trench 90 is not particularly limited as long as it is smaller than the thickness of the wafer 9, but is preferably 30 to 700 μm, more preferably 60 to 600 μm, and still more preferably 100 to 500 μm. By setting the depth of the groove 90 to be equal to or greater than the lower limit value, the polished surface can easily reach the wafer 9 by polishing the back surface 9b of the wafer 9 in a processing step described later, and therefore, the wafer 9 can be more easily divided. By setting the depth of the groove 90 to be equal to or less than the upper limit value, the strength of the wafer 9 before polishing can be increased.
The width of the trench 90 is preferably 10 to 2000. Mu.m, more preferably 30 to 1000. Mu.m, still more preferably 40 to 500. Mu.m, and particularly preferably 50 to 300. Mu.m. When the width of the groove 90 is equal to or greater than the lower limit value, it is easy to prevent the chips after singulation from coming into contact with each other due to the vibration of polishing when polishing the back surface 9b of the wafer 9 in a processing step described later. By setting the width of the groove 90 to be equal to or less than the upper limit, the strength of the wafer 9 before polishing can be increased.
The height of the convex electrode 91 is not particularly limited, but is preferably 30 to 300. Mu.m, more preferably 60 to 250. Mu.m, and still more preferably 80 to 200. Mu.m. By setting the height of the convex electrode 91 to be equal to or higher than the lower limit value, the function of the convex electrode 91 can be further improved. By setting the height of the protruding electrodes 91 to be equal to or less than the upper limit value, the protruding electrodes 91 can be easily provided at a high density, and the possibility of breakage of the protruding electrodes 91 when the wafer 9 is handled can be reduced.
In the present specification, the "height of the convex electrode" refers to the height of a portion of the convex electrode located at the highest position from the surface (circuit surface) of the wafer having the convex electrode.
The thickness of the wafer 9 is not particularly limited, but is preferably 100 to 1000. Mu.m, more preferably 200 to 900 μm, and still more preferably 300 to 800. Mu.m. When the thickness of the wafer 9 is not less than the lower limit value, warpage due to shrinkage of the curable resin film 12 during curing can be easily suppressed. By setting the thickness of the wafer 9 to be equal to or less than the upper limit value, the amount of polishing of the back surface 9b of the wafer 9 in a processing step described later can be reduced, and the time required for polishing can be shortened.
The heating of the curable resin film 12 when the heat-curable resin film 12 is bonded to the surface 9a of the wafer 9 while heating the curable resin film 12 can be performed by a known method. For example, the wafer may be heated by raising the temperature of the table on which the wafer is placed, and the curable resin film 12 may be heated using the heated wafer as a heat source.
The temperature (heating temperature) of the curable resin film 12 when the curable resin film 12 is bonded to the surface 9a of the wafer 9 while heating the curable resin film 12 is not particularly limited, but is preferably 50 to 150 ℃, more preferably 60 to 130 ℃, and even more preferably 70 to 110 ℃. When the temperature is not lower than the lower limit, the curable resin film 12 can be filled more highly into the base of the convex electrode 91 or the groove 90 without a gap. By setting the temperature to the upper limit or less, it is possible to suppress a problem that occurs when the flowability of the curable resin film 12 is too high.
The pressure applied to the curable resin film 12 (pressing pressure in the thickness direction of the wafer 9) when the curable resin film 12 is bonded to the surface 9a of the wafer 9 while heating the curable resin film 12 is not particularly limited, but is preferably 0.1 to 1.5MPa, and more preferably 0.3 to 1MPa. By setting the pressure to be equal to or higher than the lower limit value, the curable resin film 12 can be filled into the grooves 90 of the wafer 9 more highly without a gap. By setting the pressure to the upper limit value or less, breakage of the wafer 9 can be highly suppressed.
In the sticking step, the curable resin film 12 is preferably stuck to the surface 9a of the wafer 9 using a roller. When the curable resin film of the conventional product is attached to the surface 9a of the wafer 9 using a roll, the following problems are likely to occur: in the conventional product, the curable resin film flows from the region where the curable resin film is bonded to the wafer to the region where the curable resin film is not bonded to the wafer, and thus the thickness of the curable resin film becomes thicker in the region where the curable resin film is not bonded to the wafer than in the region where the curable resin film is bonded to the wafer. This is because the flow direction of the curable resin film is deviated to the advancing direction of the roller. However, in the present embodiment, by using the protective film-forming sheet, such a disadvantage can be suppressed. That is, in the present embodiment, the curable resin film 12 is bonded to the surface 9a of the wafer 9 by using a roller in the bonding step, whereby the effect of the present invention is remarkably enhanced.
The curable resin film 12 can be bonded to the surface 9a of the wafer 9 by a known method using a roll. That is, the roll surface of the rotating roll is brought into contact with the outermost surface of the protective film forming sheet 1 on the side of the support sheet 11 (here, the surface of the support sheet 11 opposite to the side of the curable resin film 12), and while the protective film forming sheet 1 is conveyed in the roll advancing direction, the surface 12a of the curable resin film 12 in the protective film forming sheet 1 opposite to the side of the support sheet 11 is brought into close contact with the surface 9a of the wafer 9, whereby the curable resin film 12 is bonded to the surface 9a of the wafer 9.
As the wafer 9, it is preferable to use a wafer in which the area of the surface 12a of the curable resin film 12 opposite to the support sheet 11 side (i.e., the area of the surface of the curable resin film 12 bonded to the wafer 9) when the wafer 9 is viewed from above the surface 9a of the wafer 9 having the convex electrodes 91 (i.e., the planar area of the surface 9 a) in plan view is equal to or larger than the area of the surface 12a.
In the sticking step, it is preferable that the entire surface of the surface 12a of the curable resin film 12 (the sticking surface to be stuck to the wafer 9) be stuck to the surface 9a of the wafer 9 by using the wafer 9.
By covering the entire surface 12a of the curable resin film 12 with the surface 9a of the wafer 9 in this manner, the amount of protrusion of the curable resin film 12 from the second region 112a of the support sheet 11 can be reduced, and as a result, formation of a region in which the curable resin film 12 is not stuck to the wafer and has a large thickness can be further suppressed.
In this way, in order to further suppress the formation of the region where the thickness of the curable resin film 12 becomes thick, the maximum value (diameter) D of the width can be mentioned as an example of a combination of the curable resin film 12 and the wafer 9 which is suitably used in the above-mentioned sticking step 12 A combination of a curable resin film 12 of 140 to 150mm and a wafer 9 of 6 inches in diameter; maximum value (diameter) D of width 12 A combination of a curable resin film 12 of 190 to 200mm and a wafer 9 having a diameter of 8 inches; maximum value (diameter) D of width 12 A combination of a curable resin film 12 having a thickness of 290 to 300mm and a wafer 9 having a diameter of 12 inches, and a maximum value (diameter) D of the width 12 A combination of a curable resin film 12 having a diameter of 440 to 450mm and a wafer 9 having a diameter of 18 inches.
In the curing step, the curable resin film 12 attached to the wafer 9 is cured, whereby a protective film 12' can be formed on the surface 9a of the wafer 9 as shown in fig. 6B. This makes it possible to obtain a wafer 102 with a protective film, which includes the wafer 9 and the protective film 12' provided on the surface 9a of the wafer 9 having the convex electrode 91. The protective film 12 'of the wafer 102 with a protective film further includes a support sheet 11 on a surface 12b' opposite to the wafer 9 side. In fig. 6B, reference numeral 12a 'denotes a surface of the protective film 12' opposite to the support sheet 11 side.
In the wafer with a protective film 102, the base portion near the surface 9a of the convex electrode 91 on the wafer 9 is covered with the protective film 12', and the entire region of the groove 90 of the wafer 9 is filled with the protective film 12'.
The curable resin film 12 may be cured by a known method depending on the characteristics of the curable resin film 12. For example, when the curable resin film 12 is thermosetting, the curable resin film 12 may be cured by heating, and when the curable resin film 12 is energy ray-curable, the curable resin film 12 may be cured by irradiating energy rays.
When the curable resin film 12 is thermally cured, the heating temperature is preferably 100 to 200 ℃, and more preferably 120 to 150 ℃. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours.
When the curable resin film 12 is cured with an energy ray, the illuminance of the energy ray is preferably 180 to 280mW/cm 2 The dose of the energy ray is preferably 450 to 1000mJ/cm 2
In the processing step, the wafer 9 (of the wafer 102 with the protective film) on which the protective film 12' is formed is divided. As a result, the wafer 9 is singulated into chips 9', and as shown in fig. 6C, a wafer divided body 103 with a protective film is obtained, which includes a plurality of chips 9' and a protective film 12' provided on the surface 9a ' of the plurality of chips 9' having the convex electrodes 91 and connected to each other without being cut (1 piece).
The wafer 9 can be divided by polishing a surface (back surface) 9b of the wafer 9 opposite to the surface 9a having the convex electrode 91 using a polishing tool such as a grinder, for example. At this time, the wafer 9 is polished until the polished surface reaches the groove 90 from the back surface 9b to the surface 9a of the wafer 9 (until the groove 90 appears). This reduces the thickness of the wafer 9, and the wafer 9 is divided by using the grooves 90 as dividing portions. The polishing of the back surface 9b of the wafer 9 is performed until the thickness of the chip 9' reaches a target value.
Next, in the processing step, before the protective film 12 'is cut, the dicing sheet 8 is attached to the back surfaces 9b' of all the chips 9 'in the wafer divided body with protective film 103, and the supporting sheet 11 is removed from the protective film 12'. Thereby, as shown in fig. 6D, a dicing sheet laminate 104 having the following configuration was obtained: the wafer divided body 103 with the protective film is provided on one surface of the dicing sheet 8 so that the chips 9' therein face the dicing sheet 8 side.
The cutting blade 8 may be of a known material. For example, the dicing sheet 8 may be a dicing sheet composed of only a base material; and a dicing sheet comprising a base material and an adhesive layer provided on one surface of the base material. When the dicing sheet 8 including the base material and the adhesive layer is used, the adhesive layer is bonded to the back surface 9b 'of the chip 9'.
In the present specification, in consideration of both the protective film forming sheet of the present embodiment (for example, the protective film forming sheet 1 shown in fig. 2 to 3 and the protective film forming sheet 2 shown in fig. 4) and the dicing sheet (for example, the dicing sheet 8 shown in fig. 6D), the base material in the protective film forming sheet of the present embodiment is referred to as a "first base material" and the base material in the dicing sheet is referred to as a "second base material" in order to distinguish these base materials.
The second substrate and the adhesive layer in the dicing sheet 8 may be both of known materials.
The second substrate may be the same as the first substrate.
Examples of the adhesive layer include materials curable with energy rays or non-curable.
In the present specification, "non-curable" means that curing does not occur by any method such as heating or irradiation with an energy ray.
Before the dicing sheet 8 is attached to the wafer divided body with the protective film 103, for example, the supporting sheet 11 may be cut along the outline of the aggregate of the chips 9', that is, a portion corresponding to the outer periphery of the wafer 9 before division in the wafer divided body with the protective film 103. When the wafer segment 103 with the protective film is viewed from above the chip 9' side of the wafer segment 103 with the protective film in a downward direction, if the protective film 12' cannot be accommodated in the shape of the support sheet 11, the portion of the protective film 12' beyond the support sheet 11 can be cut at the same time. Fig. 6D shows a case where the support sheet 11 and the protective film 12' are cut in the above-described manner.
Next, in the processing step, the surface layer portion of the surface 12b ' of the protective film 12' opposite to the chip 9' is removed by cleaning, thereby exposing the upper portion of the convex electrode 91. Such a cleaning treatment is preferably performed when the top of the convex electrode 91 is covered with the curable resin film 12 as shown in fig. 6A. Further, in the processing step, the protective film 12 'is cut, whereby a plurality of chips 105 with a protective film including the chip 9' and the cut protective film 120 'provided on the chip 9' are obtained as shown in fig. 6E. In this specification, only the "protective film after cutting" may be referred to as a "protective film". More specifically, the cut protective film 120' is provided on the surface 9a ' of the chip 9' having the convex electrode 91.
The surface layer portion of the surface 12b 'of the protective film 12' can be cleaned by a known method such as plasma irradiation.
The protective film 12 'is cut along the outer periphery (in other words, the side surface) of the chip 9'. In this case, the protective film 12' filled between the adjacent chips 9' is preferably cut along the outer periphery (side surface) of the chip 9' so as to be divided into two parts. Thus, the protection film 120' after cutting is also provided on each side surface of the adjacent chips 9', and the total of 5 surfaces of the surface 9a ' having the convex electrode 91 and the 4 side surfaces of each chip 9' are protected by the protection film 120', so that a remarkably high protection effect by the protection film 120' can be obtained for the chip 9'.
The protective film 12' can be cut by a known method. For example, the protective film 12' can be cut by using a known cutting tool such as a dicing blade.
After the processing step, the obtained chip 105 with the protective film is pulled away from the dicing sheet 8 and picked up.
The chip 105 with the protective film can be picked up by a known method.
When the dicing sheet 8 having the adhesive layer is used, the chip 105 with the protective film can be pulled off from the adhesive layer and picked up.
When the adhesive layer is curable, the chip 105 with the protective film can be picked up after curing the adhesive layer, thereby making it easier to pick up the chip.
Although the case where the dicing sheet 8 is used to cut the protective film 12 'in the processing step has been described above, as described above, a protective film may be provided on the back surface 9b' of the chip 9 'to further protect the chip 9'. In this case, instead of the dicing sheet 8, a protective film-forming sheet having the following configuration can be used: the protective film forming apparatus includes a support sheet and a protective film forming film for forming a protective film on one surface of the support sheet. Here, the support sheet may include a base material and an adhesive agent layer, and in this case, the protective film forming film is provided on a surface of the adhesive agent layer opposite to the base material side.
When the protective film-forming sheet is used, the protective film-forming sheet is bonded to the back surface 9b 'of the chip 9'.
In the present specification, considering both the protective film forming sheet of the present embodiment (for example, the protective film forming sheet 1 shown in fig. 2 to 3 and the protective film forming sheet 2 shown in fig. 4) and the protective film forming sheet provided with the protective film forming film, the protective film forming sheet of the present embodiment is referred to as a "first protective film forming sheet", and the protective film forming sheet provided with the protective film forming film is referred to as a "second protective film forming sheet", so as to distinguish these protective film forming sheets.
In this case, the support sheet (for example, the support sheet 11 shown in fig. 2 to 3 and the support sheet 21 shown in fig. 4) in the protective film forming sheet of the present embodiment is referred to as a "first support sheet", and the support sheet in the protective film forming sheet provided with the protective film forming film is referred to as a "second support sheet", so that these support sheets are distinguished from each other. The same applies to the adhesive layer provided on the support sheet, and the adhesive layer in the first support sheet is referred to as a "first adhesive layer", and the adhesive layer in the second support sheet is referred to as a "second adhesive layer", in order to distinguish these adhesive layers.
Further, at this time, the protective film formed of the curable resin film using the protective film forming sheet of the present embodiment (for example, the protective film 12' shown in fig. 6B and the like) is referred to as a "first protective film", and the protective film formed of the protective film (for example, the protective film provided on the back surface 9B ' of the chip 9 ') is referred to as a "second protective film", so as to distinguish these protective films.
The second support sheet in the second protective film formation sheet may be made of the same material as the first support sheet in the first protective film formation sheet.
The protective film forming film in the second protective film forming sheet is either curable or non-curable.
The curable protective film forming film may be either thermosetting or energy ray-curable, and may have both thermosetting and energy ray-curable characteristics.
The non-curable protective film forming film is regarded as a protective film after a stage of being disposed (formed) on a target object (i.e., a wafer).
In the case where the second protective film forming sheet having the curable protective film forming film is used in the processing step, the second protective film forming sheet (the protective film forming film) may be attached to the back surface 9b 'of the chip 9' and then the protective film forming film may be cured at an arbitrary stage to form the second protective film. Further, at a stage before the chip 105 with the protective film is pulled away from the second support sheet and picked up, the protective film forming film or the second protective film may be cut along the outer periphery of the chip 9'.
When the second protective film forming sheet is used, the chip 105 with the protective film is separated from the second support sheet and picked up in a state where the cut protective film forming film or the second protective film is further provided on the back surface 9b 'of the chip 9' among the chips.
When the second support sheet includes a curable adhesive agent layer, the chip 105 with the protective film can be picked up after curing the adhesive agent layer, thereby facilitating pickup.
The method for manufacturing a chip with a protective film according to the present embodiment is not limited to the above-described manufacturing method (hereinafter, referred to as "manufacturing method 1") as long as the steps are included in the order of the sticking step, the curing step, and the processing step, and a configuration of a part may be changed, deleted, or added in the above-described manufacturing method (manufacturing method 1).
Although the description has been made so far with respect to the case where the protective film forming sheet is attached to the wafer having the grooves on the surface having the convex electrodes in the manufacturing method 1, and the wafer is singulated by polishing the back surface of the wafer to produce chips, the wafer may be cut using a dicing blade using a wafer not having the grooves, that is, the wafer may be singulated by so-called full-cut (full-cut) to produce chips.
Further, a wafer not provided with the grooves may be used, a modified layer as a division starting point may be provided in the wafer by laser irradiation, and a sheet provided with the wafer may be expanded, or the wafer may be singulated by an impact when a back surface of the wafer is polished, to thereby form chips.
In these modifications, the protective film may be cut at the same time as the wafer is divided into chips (singulated).
In the manufacturing method 1, instead of using a protective film forming sheet prepared in advance for the attachment step, the step of forming the protective film forming sheet and the attachment step may be performed continuously. More specifically, the manufacturing method 1 may include a cutting step of forming a protective film-forming sheet immediately before the sticking step, the cutting step being performed by cutting the curable resin film formed on substantially the entire surface of the support sheet into a shape identical to the shape of the first region assumed to be the support sheet, and removing the excess curable resin film to form the second region. By using an apparatus for continuously performing such a cutting step and the attaching step, the production of the protective film forming sheet and the attaching to the wafer can be performed on the same production line.
Fig. 7A to 7E are cross-sectional views for schematically illustrating another example of the method for manufacturing a chip with a protective film according to the present embodiment (hereinafter, may be referred to as "manufacturing method 2"). The production method 2 described below corresponds to the production method 1 described above in which the order of some steps is changed.
In the manufacturing method 2, the above-described attaching step is first performed in the same manner as in the manufacturing method 1, and as shown in fig. 7A, a wafer 101 with a protective film forming sheet is produced.
Like the production method 1, the production method 2 can also suppress formation of a region in which the thickness of the curable resin film 12 is increased in the second region 112a of the support sheet 11.
In the curing step of the production method 2, the support sheet 11 and the curable resin film 12 are cut along the outer periphery of the wafer 9 with respect to the wafer 101 with the protective film forming sheet before the curable resin film 12 is cured. When the support sheet 11 is an adhesive sheet or a support sheet having a pressure-sensitive adhesive layer for a jig, the peripheral portion of the support sheet 11 may be attached to a jig (not shown) such as a ring frame before the support sheet 11 and the curable resin film 12 are cut. The support sheet 11 may be removed from the curable resin film 12 after cutting the support sheet 11 and the curable resin film 12, or the support sheet 11 may be removed from the curable resin film 12 without cutting the support sheet 11 and the curable resin film 12.
In the curing step of production method 2, curable resin film 12 bonded to wafer 9 is cured in the same manner as in the curing step of production method 1, whereby protective film 12' is formed on surface 9a of wafer 9 as shown in fig. 7B. This makes it possible to obtain a wafer 102 with a protective film having the same structure as in production method 1. However, unlike the manufacturing method 1, the protective film 12 'in the wafer 102 with the protective film further includes the support sheet 11 after cutting or does not include the support sheet 11 on the surface 12b' opposite to the wafer 9 side. Fig. 7B shows a case where the support piece 11 is not provided.
In the processing step of the manufacturing method 2, before the wafer 9 is divided, the surface layer portion of the surface 12b 'of the protective film 12' on the opposite side to the wafer 9 is cleaned and removed to expose the upper portion of the convex electrode 91, and the back grinding tape 7 different from the support sheet 11 is further attached to the surface 12b 'of the cleaned protective film 12'.
In the manufacturing method 2, the surface layer portion of the surface 12b 'of the protective film 12' can be cleaned by the same method as the manufacturing method 1.
In the sticking step of the production method 2, since the formation of the thick region of the curable resin film 12 can be suppressed as described above, the protective film 12' can be suppressed from protruding beyond the outer periphery of the wafer 9 in this step. Therefore, the back grinding tape 7 can be stably attached to the surface 12b 'of the protective film 12'.
Next, in the processing step of manufacturing method 2, wafer 9 (of wafer 102 with a protective film) on which protective film 12' is formed is divided. As a result, the wafer 9 is singulated to obtain chips 9', and as shown in fig. 7C, wafer segments 103' with protective films are obtained, which include a plurality of chips 9 'and the protective films 12' provided on the surfaces 9a 'of the plurality of chips 9' having the convex electrodes 91 and connected together without being cut (1 piece).
The wafer segment 103 'with a protective film is different from the wafer segment 103 with a protective film in the manufacturing method 1 in that the thickness of the protective film 12' is thinner than before by cleaning.
In the manufacturing method 2, the wafer 9 can be divided in the same manner as in the manufacturing method 1.
Next, in the processing step of the manufacturing method 2, before the protective film 12' is cut, the dicing sheet 8 is attached to the rear surfaces 9b ' of all the chips 9' in the wafer divided body 103' with a protective film, and the back grinding tape 7 is removed from the protective film 12'. Thus, as shown in fig. 7D, a dicing sheet laminate 104' having the following configuration was obtained: the wafer segment 103 'with the protective film is provided on one surface of the dicing sheet 8 so that the chip 9' faces the dicing sheet 8.
Next, in the processing step of the production method 2, the protective film 12' is cut, whereby a chip 105 with a protective film having the same configuration as that of the production method 1 is obtained as shown in fig. 7E.
In the manufacturing method 2, the protective film 12' can be cut in the same manner as in the manufacturing method 1.
In the manufacturing method 2, for the same reason as in the manufacturing method 1, it is also preferable that the protective film 12' filled between the adjacent chips 9' is cut along the outer periphery (side surface) of the chip 9' to be divided into two parts when the protective film 12' is cut along the outer periphery (side surface) of the chip 9'.
After the above-described processing step of production method 2, the obtained chip 105 with the protective film is pulled off from the dicing sheet 8 and picked up in the same manner as production method 1.
In the same manner as in production method 1, in the processing step of production method 2, a wafer having no grooves may be used and singulated to produce chips.
In addition, the manufacturing method 2 may have the cutting step immediately before the attaching step, as in the manufacturing method 1.
In both cases of manufacturing method 1 and manufacturing method 2, the chip 105 with the protective film obtained as described above can be flip-chip connected to the connection pad portions on the circuit board on the top portions of the convex electrodes 91 to manufacture a substrate device (not shown). At this time, the chip 105 with the protective film is connected to the circuit forming surface of the circuit board. For example, when a semiconductor wafer is used as a wafer, the substrate device may be a semiconductor device.
Examples
The present invention will be described in more detail below with reference to specific examples. However, the present invention is not limited to the examples shown below.
The raw materials used for producing the composition (III) shown below are as follows.
Polymer component (A) -1: polyvinyl butyral having a structural unit represented by the following formulae (i) -1, (i) -2 and (i) -3 ("S-LEC BL-10" manufactured by SEKISUI CHEMCAL co., ltd., weight average molecular weight 25000, glass transition temperature 59 ℃).
[ chemical formula 1]
Figure BDA0003815739470000361
In the formula I 1 Is about 28,m 1 Is 1 &3,n 1 Is an integer of 68 to 74.
Epoxy resin (B1) -1: liquid modified bisphenol A epoxy resin ("EPICLON EXA-4850-150" manufactured by DIC CORPORATION, 900 molecular weight, 450g/eq epoxy equivalent)
Epoxy resin (B1) -4: dicyclopentadiene type epoxy resin ("EPICLON HP-7200HH" manufactured by DIC CORPORATION, epoxy equivalent 254-264 g/eq)
Thermal curing agent (B2) -1 o-cresol novolak resin ("phenol KA-1160" manufactured by DIC CORPORATION)
Curing accelerator (C) -1: 2-phenyl-4, 5-dimethylol imidazole (Curezol 2PHZ-PW manufactured by SHIKOKU CHEMICALS CORPORATION)
Filler (D) -1: epoxy-modified spherical silica (ADMANANO YA050C-MKK manufactured by Admatechs, average particle diameter 50 nm)
Additive (I) -1: rheology control agent (polyhydroxycarboxylate, "BYK-R606" manufactured by BYK Co.)
[ example 1]
The polymer component (a) -1 (100 parts by mass), the epoxy resin (B1) -1 (350 parts by mass), the epoxy resin (B1) -4 (270 parts by mass), the thermosetting agent (B2) -1 (190 parts by mass), the curing accelerator (C) -1 (2 parts by mass), the filler (D) -1 (90 parts by mass), and the additive (I) -1 (9 parts by mass) were dissolved or dispersed in methyl ethyl ketone, and stirred at 23 ℃. The amounts of the components other than the solvent to be blended are the amounts of the target substances not including the solvent.
The composition (III) obtained above was applied to a release-treated surface of a polyethylene terephthalate film ("SP-PET 381031" manufactured by Lintec Corporation, having a thickness of 38 μm) whose one surface was subjected to a release treatment by silicone treatment, and heated and dried at 120 ℃ for 2 minutes, thereby forming a thermosetting resin film having a thickness of 30 μm.
Then, the thermosetting resin film was processed into a circular shape having a diameter of 170mm together with the release film to prepare a test piece with a release film.
The entire exposed surface (in other words, the surface opposite to the side having the release film) of the test piece thus obtained was bonded to the surface of a transparent tape-shaped back grinding tape ("E-8180" manufactured by Lintec Corporation), to obtain a laminate.
The obtained laminate had a structure in which a back-grinding tape, a test piece (thermosetting resin film), and a release film were laminated in this order in the thickness direction.
[ example 2]
A laminate was obtained in the same manner as in example 1, except that the thickness of the thermosetting resin film was changed to 45 μm, and the attached back grinding tape was changed to "E-8510HR" manufactured by Lintec Corporation.
Further, 20 sheets of the same thermosetting resin films as described above were separately produced except that the thickness was not 45 μm but 50 μm, and these thermosetting resin films were laminated and cut to obtain disk-shaped test pieces having a thickness of 1mm and a diameter of 25 mm. The test piece was subjected to viscoelasticity measurement using a viscoelasticity measuring apparatus ("MCR 301" manufactured by Anton-Paar corporation), gc1 and Gc300 were measured, and the X value was calculated, and the results thereof are as follows.
Gc1=115000Pa
Gc300=3900Pa
X value =29
The filling property of the thermosetting resin film in the laminate obtained above into the grooves was evaluated by the following procedure, and the result was "a".
(1) Preparation of wafers for fabrication of semiconductor chips
As a wafer for manufacturing a semiconductor chip, a 12-inch silicon wafer (750 μm thick) obtained by half-cutting a line to be divided was used. The width of the trench, which is a half-cut portion of the silicon wafer, was 60 μm, and the depth of the trench was 230 μm.
(2) Evaluation method
The release film was removed from the laminate, and the surface (exposed surface) of the thermosetting resin film thus exposed was bonded to the half-cut formed surface of the wafer for producing semiconductor chips while being pressed under the following conditions.
The attaching device: full-automatic laminating machine (manufactured by Lintec Corporation, product name "RAD-3510")
Roll pressure: 0.5MPa
Roller height: 400 μm
Sticking speed: 5 mm/s
The sticking temperature: 90 deg.C
Next, after the back grinding tape was peeled off from the thermosetting resin film, the wafer for manufacturing semiconductor chips to which the thermosetting resin film was attached was heated at 130 ℃ for 4 hours, and the thermosetting resin film was cured to form a protective film. Next, the wafer for manufacturing the semiconductor chip was cut from the half-cut surface to the back surface of the half-cut portion (trench), and the filling property of the half-cut portion (trench) with the protective film was evaluated using an optical microscope ("VHX-1000" manufactured by KEYENCE CORPORATION). The filling property was evaluated as follows.
S: the shape of the protective film was not distorted, and the filling property was optimal.
A: the shape of the protective film was slightly distorted in the vicinity of the opening of the trench, but the filling property was good.
B: the filling property was poor.
Industrial applicability
The present invention can be used for manufacturing a chip or the like having a convex electrode and a protective film on a surface having the convex electrode. Such a chip provided with a protective film is suitably used for manufacturing a substrate device by flip-chip connection with a connection pad on a circuit board.
Description of the reference numerals
1. 2: a protective film-forming sheet; 11. 21: a support sheet; 11a, 21a: a surface on one side of the support sheet (a surface on the curable resin film side of the support sheet); 111a: a first region on a face of one side of the support sheet; 112a: a second region on a face of one side of the support sheet; 12: curable resin film, 12a: a surface of the curable resin film opposite to the support sheet side; 12': protective film, 120': cutting the protective film; 9: a wafer; 91: a convex electrode of the wafer; 9a: surface of wafer having convex electrode(circuit side); 90: a trench of the wafer; 9': a chip; 105: a chip with a protective film; d 12 : a maximum value (diameter) of the width of the curable resin film; t is 12 : thickness of the curable resin film.

Claims (14)

1. A protective film-forming sheet comprising a support sheet and a curable resin film provided on one surface of the support sheet, wherein,
the curable resin film is a resin film for forming a protective film on a surface of a wafer by being bonded to the surface of the wafer having convex electrodes and cured,
the support sheet has, on the one surface thereof, a first region provided with the curable resin film, and a second region surrounding the first region and not provided with the curable resin film.
2. The protective film-forming sheet according to claim 1,
a test piece of the curable resin film having a diameter of 25mm and a thickness of 1mm is strained under conditions of a temperature of 90 ℃ and a frequency of 1Hz, a storage modulus of the test piece is measured, and when the storage modulus of the test piece when the strain of the test piece is 1% is Gc1 and the storage modulus of the test piece when the strain of the test piece is 300% is Gc300, an X value calculated by the following formula is 19 or more and less than 10000,
X=Gc1/Gc300。
3. the protective film-forming sheet according to claim 1 or 2, wherein the thickness of the curable resin film is 25 μm or more.
4. The protective film-forming sheet according to any one of claims 1 to 3, wherein the curable resin film has a maximum width of 140 to 150mm, 190 to 200mm, 290 to 300mm, or 440 to 450mm.
5. The protective film-forming sheet according to any one of claims 1 to 4, wherein the support sheet has a circular shape.
6. The protective film-forming sheet according to claim 5, wherein the support sheet is an adhesive sheet or has an adhesive layer for a jig along an outer peripheral portion thereof.
7. The protective film-forming sheet according to any one of claims 1 to 4, wherein the support sheet is a release film.
8. The protective film forming sheet according to any one of claims 1 to 7, wherein a groove as a dividing portion of the wafer is formed on the surface of the wafer.
9. A method for manufacturing a chip with a protective film, comprising:
a sticking step of sticking the curable resin film to a surface of a wafer having convex electrodes while heating the curable resin film in the protective film-forming sheet according to any one of claims 1 to 8;
a curing step of forming a protective film on the surface of the wafer by curing the attached curable resin film; and
and a processing step of obtaining a chip with a protective film, which includes a chip and the protective film provided on the chip after the cutting, by dividing the wafer on which the protective film is formed and cutting the protective film.
10. The method for manufacturing a chip with a protective film according to claim 9,
the wafer is used, wherein the planar area of the surface is equal to or larger than the area of the bonding surface of the curable resin film bonded to the wafer,
in the bonding step, the entire bonding surface of the curable resin film is bonded to the surface of the wafer.
11. The method for manufacturing a chip with a protective film according to claim 9 or 10,
grooves are formed on the surface of the wafer as dividing portions of the wafer,
in the attaching step, the curable resin film is filled into the groove when the curable resin film is attached to the surface of the wafer.
12. The method for manufacturing a chip with a protective film according to any one of claims 9 to 11, wherein,
in the attaching step, the curable resin film is attached to the surface of the wafer using a roller.
13. A laminate obtained by:
the laminate is obtained by forming a thermosetting resin film on the release-treated surface of a release film, processing the thermosetting resin film into a circular shape together with the release film, and bonding the entire surface of the thermosetting resin film on the side opposite to the side provided with the release film to the surface of a tape-shaped back grinding tape.
14. A laminate comprising:
the adhesive tape comprises a release film, a thermosetting resin film provided on a release-treated surface on one side of the release film, and a back-grinding adhesive tape provided on a surface of the thermosetting resin film on the side opposite to the release film side, wherein the release film and the thermosetting resin film are both circular in planar shape, the release film and the thermosetting resin film are arranged so that positions of outer peripheral portions in the radial direction of the release film and the thermosetting resin film coincide with each other, and the back-grinding adhesive tape is in a tape shape.
CN202180016958.8A 2020-02-27 2021-01-29 Protective film forming sheet, method for manufacturing chip with protective film, and laminate Pending CN115176333A (en)

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