CN114555697A - Resin film, composite sheet, and method for manufacturing semiconductor chip with first protective film - Google Patents

Resin film, composite sheet, and method for manufacturing semiconductor chip with first protective film Download PDF

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Publication number
CN114555697A
CN114555697A CN202180005977.0A CN202180005977A CN114555697A CN 114555697 A CN114555697 A CN 114555697A CN 202180005977 A CN202180005977 A CN 202180005977A CN 114555697 A CN114555697 A CN 114555697A
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Prior art keywords
resin film
film
protective film
semiconductor chip
semiconductor wafer
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CN202180005977.0A
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四宫圭亮
森下友尭
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Lintec Corp
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Lintec Corp
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    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2429/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
    • C08J2429/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
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    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

The present invention provides a resin film which is thermosetting, wherein the resin film before thermosetting is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is less than 100J/g.

Description

Resin film, composite sheet, and method for manufacturing semiconductor chip with first protective film
Technical Field
The invention relates to a resin film, a composite sheet, and a method for manufacturing a semiconductor chip with a first protective film.
This application claims priority based on Japanese patent application No. 2020-.
Background
Conventionally, when a multi-pin LSI package used for an MPU, a gate array, or the like is mounted on a printed wiring board, a flip chip mounting method has been employed in which a chip having convex electrodes (hereinafter referred to as "bumps" in the present specification) made of eutectic solder, high temperature solder, gold, or the like formed on its connection pad portions is used as a semiconductor chip, and these bumps are brought into contact with corresponding terminal portions on a chip mounting board by a so-called flip chip method, and fusion/diffusion bonding is performed.
The semiconductor chip used in this mounting method is obtained by, for example, grinding or dicing a surface of a semiconductor wafer having bumps formed on a circuit surface, the surface being opposite to the circuit surface (in other words, a bump forming surface), and singulating the semiconductor chip. In the process of obtaining such a semiconductor chip, for the purpose of protecting the bump forming surface and the bumps of the semiconductor wafer, a curable resin film is generally attached to the bump forming surface and the film is cured to form a protective film on the bump forming surface.
On the other hand, semiconductor devices are expected to have higher functions, and thus the size of semiconductor chips tends to be enlarged. However, since the semiconductor chip after the size enlargement is warped in a state of being mounted on the substrate, the bumps are easily deformed, and particularly, the bumps positioned at the end portion of the semiconductor chip or the vicinity thereof are easily broken. It is also desirable that the protective film formed on the bump forming surface suppress such breakage of the bump.
A method of forming a protective film on a bump formation surface of a semiconductor wafer will be described with reference to fig. 8A to 8D.
In forming the protective film, the protective film forming sheet 8 shown in fig. 8A is used. The protective film-forming sheet 8 is configured by sequentially laminating an adhesive layer 83 and a curable resin film 82 on a substrate 81.
First, the protective film forming sheet 8 is disposed so that the curable resin film 82 faces the bump forming surface 9a of the semiconductor wafer 9.
Next, the protective film forming sheet 8 is pressure-bonded to the semiconductor wafer 9, and as shown in fig. 8B, the curable resin film 82 of the protective film forming sheet 8 is bonded to the bump forming surface 9a of the semiconductor wafer 9. At this time, the curable resin film 82 is bonded while heating the curable resin film 82. Thus, the curable resin film 82 adheres to the bump forming surface 9a of the semiconductor wafer 9 and the surface 91a of the bump 91, but if the bump 91 penetrates the curable resin film 82, the adhesive layer 83 also adheres to a part of the surface 91a of the bump 91.
After the curable resin film 82 is thus bonded, the surface (back surface) 9b of the semiconductor wafer 9 opposite to the bump forming surface 9a is further polished as necessary, and then a protective film forming sheet (not shown) for protecting the back surface 9b is separately bonded to the back surface 9b of the semiconductor wafer 9.
Next, as shown in fig. 8C, the base material 81 and the adhesive layer 83 are removed from the curable resin film 82.
Next, as shown in fig. 8D, the curable resin film 82 is cured to form a protective film 82'.
As a protective film forming sheet capable of forming a protective film on a bump forming surface of a semiconductor wafer, there is disclosed a protective film forming sheet in which a curable resin film is thermosetting and has a melt viscosity in a specific range, and an adhesive layer has a shear modulus in a specific range in a specific temperature range (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2015-092594
Disclosure of Invention
Technical problem to be solved by the invention
On the other hand, various methods are known as a method of dividing a semiconductor wafer into semiconductor chips. As an example, the following method is known: a semiconductor wafer is used in which a groove is further provided as a dividing position on a bump formation surface of the semiconductor wafer, and as described above, a surface (back surface) of the semiconductor wafer opposite to the bump formation surface is polished so that the polished surface (back surface) reaches the groove, thereby dividing the semiconductor wafer into semiconductor chips. In the case of this method, when the curable resin film in the protective film forming sheet is bonded to the bump forming surface of the semiconductor wafer before the semiconductor wafer is divided, if the curable resin film can be sufficiently filled in the grooves, the protective film can cover not only the bump forming surface but also the side surfaces of the semiconductor chip by dividing the semiconductor wafer and curing the curable resin film. Fig. 9 shows such a semiconductor chip having a protective film on not only the bump formation surface but also the side surface. Fig. 9 is a cross-sectional view schematically showing an example of a semiconductor chip (semiconductor chip with a protective film) provided with a protective film on a bump forming surface and a side surface, assuming that the protective film forming sheet 8 can be normally obtained.
The semiconductor chip 909 with the protective film shown here includes the semiconductor chip 9 ' and the first protective film 820 ' provided on the side surface 9c ' and the bump forming surface 9a ' of the semiconductor chip 9 '. The side surface 9c ' and the bump forming surface 9a ' of the semiconductor chip 9 ' are protected by the first protection film 820 ' after cutting, respectively, and the protection effect of the semiconductor chip 9 ' is remarkably high.
As the curable resin film, a thermosetting resin film may be used. When the filled resin film is thermally cured, the shape of the grooves filled with the resin film may be fine, and the heat transfer pattern to the resin film may be uneven, thereby causing partial curing failure of the thermosetting resin film. If poor curing occurs, the chip protection may be less than expected. Further, when the protective film in which curing failure has occurred is cut along the gap between the semiconductor chips, the processing chips generated during cutting may adhere to the semiconductor chips or the wafer, and the cut surfaces of the protective film may adhere to each other again.
In contrast, it is not certain whether the protective film forming sheet (protective film forming film) disclosed in patent document 1 can solve such a problem.
The curable resin film is bonded to the bump forming surface of the semiconductor wafer, but the curable resin film is not limited thereto, and the resin film may be bonded to the uneven surface of the semiconductor wafer other than the bump forming surface. In contrast, the adhesion to the uneven surface may cause curing failure of the resin film.
The present invention provides a resin film which can be applied to the attachment to the uneven surface and can form a protective film, and a composite sheet provided with the resin film and used for attaching the resin film to the uneven surface, wherein when the resin film is filled in the grooves on the uneven surface and cut after heat treatment for thermosetting, processing chips which may be generated during cutting are not easily attached to a semiconductor chip or a wafer.
Means for solving the problems
The present invention has the following aspects.
[1] A resin film which is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount of the resin film in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is less than or equal to 100J/g.
[2] The resin film according to the above [1], wherein the resin film contains a thermosetting component (B),
the proportion of the content of the thermosetting component (B) to the total mass of the resin film is 10 to 75 mass%.
[3] The resin film according to [1] or [2], wherein the resin film having a diameter of 25mm and a thickness of 1mm is used as a second test piece, the second test piece is strained under the conditions of a temperature of 90 ℃ and a frequency of 1Hz, the storage modulus of the second test piece is measured, and the value X calculated from the following equation is 19 or more and less than 10000 when the storage modulus of the second test piece when the strain of the second test piece is 1% is Gc1 and the storage modulus of the second test piece when the strain of the second test piece is 300% is Gc300,
X＝Gc1/Gc300。
[4] the resin film according to any one of the above [1] to [3], wherein the resin film is used for attachment to an uneven surface.
[5] The resin film according to any one of the above [1] to [4], wherein the resin film is used for protecting a concave-convex surface and a side surface of a semiconductor chip.
[6] A composite sheet comprising a support sheet and a resin film provided on one surface of the support sheet,
the resin film is the resin film according to any one of [1] to [5 ].
[7] The composite sheet according to [6], wherein the support sheet comprises a base material and an adhesive layer provided on one surface of the base material, and the adhesive layer is disposed between the base material and the resin film.
[8] The composite sheet according to [6] or [7], wherein the support sheet comprises a base material and a buffer layer provided on one surface of the base material, and the buffer layer is disposed between the base material and the resin film.
[9] A method for manufacturing a semiconductor chip with a first protective film using a semiconductor wafer,
the semiconductor chip with the first protective film includes a semiconductor chip and a first protective film provided on a side surface of the semiconductor chip and a surface having a bump,
the semiconductor wafer has bumps on one surface thereof and grooves as dividing positions of the semiconductor wafer,
the manufacturing method includes a sticking step of sticking the resin film in the composite sheet according to any one of [6] to [8] to the one surface of the semiconductor wafer to thereby manufacture a semiconductor wafer with a resin film in which the resin film is provided on the one surface and the grooves are filled with the resin film,
the manufacturing method further has:
a curing step (1) of forming a semiconductor wafer with a first protective film including the semiconductor wafer and a first protective film provided on the one surface of the semiconductor wafer and filling the trench by thermally curing the resin film after the attaching step; a dividing step (1) of dividing the semiconductor wafer after the curing step (1) to produce a semiconductor chip group with a first protective film, the semiconductor chip group including a plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (1) for cutting the first protective film along a gap between the semiconductor chips in the semiconductor chip group with the first protective film after the dividing step (1), thereby producing the semiconductor chip with the first protective film; or
A cutting step (2) of cutting the first protective film along the trench in the semiconductor wafer with the first protective film after the attaching step and after the curing step (1), thereby producing a semiconductor wafer with the cut first protective film; and a dividing step (2) of dividing the semiconductor wafer after the cutting step (2) to produce the semiconductor chip with the first protective film; or
A dividing step (3) of dividing the semiconductor wafer after the attaching step to produce a semiconductor chip group with a resin film, the semiconductor chip group including a plurality of the semiconductor chips and the resin film provided in a gap between a surface of the plurality of the semiconductor chips having the bumps and the semiconductor chip; a curing step (3) of forming the first protective film by thermally curing the resin film after the dividing step (3), thereby producing a semiconductor chip group with the first protective film, which includes the plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (3) for cutting the first protective film along the gap between the semiconductor chips in the semiconductor chip group with the first protective film after the curing step (3), thereby obtaining the semiconductor chip with the first protective film.
Effects of the invention
According to the present invention, there can be provided a resin film which can be applied to adhesion to an uneven surface and can form a protective film, and a composite sheet provided with the resin film and used for adhering the resin film to an uneven surface, wherein when the resin film is filled in grooves on the uneven surface and cut after heat treatment for thermosetting, processing chips which may be generated during cutting are less likely to adhere to a semiconductor chip or a wafer.
Drawings
Fig. 1 is a sectional view schematically showing one example of a resin film of one embodiment of the present invention.
Fig. 2 is a plan view schematically illustrating the amount of protrusion of the resin film when the planar shape of the resin film is circular.
Fig. 3 is a sectional view schematically showing an example of a composite sheet according to an embodiment of the present invention.
Fig. 4A is a cross-sectional view schematically showing an example of a method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 4B is a sectional view schematically showing an example of a method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 4C is a sectional view schematically showing an example of a method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 4D is a sectional view schematically showing an example of a method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 4E is a sectional view schematically showing an example of a method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 5A is a sectional view schematically showing another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 5B is a sectional view schematically showing another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 5C is a sectional view schematically showing another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 5D is a sectional view schematically showing another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 5E is a sectional view schematically showing another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 6A is a cross-sectional view schematically showing still another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 6B is a cross-sectional view schematically showing still another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 6C is a sectional view schematically showing still another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 6D is a sectional view schematically showing still another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 6E is a sectional view schematically showing still another example of the method for manufacturing a semiconductor chip with a first protective film when the composite sheet shown in fig. 3 is used.
Fig. 7 is a plan view schematically showing a laminate including a thermosetting resin film produced in example 1 when the amount of bleeding of the thermosetting resin film was measured.
Fig. 8A is a sectional view schematically illustrating a method of forming a protective film on a bump formation surface of a semiconductor wafer.
Fig. 8B is a sectional view schematically illustrating a method of forming a protective film on a bump formation surface of a semiconductor wafer.
Fig. 8C is a sectional view schematically illustrating a method of forming a protective film on a bump formation surface of a semiconductor wafer.
Fig. 8D is a sectional view schematically illustrating a method of forming a protective film on the bump formation surface of the semiconductor wafer.
Fig. 9 is a cross-sectional view schematically showing an example of a semiconductor chip provided with a protective film on a bump formation surface and a side surface.
Detailed Description
Diamond resin film and method for producing same
The resin film according to one embodiment of the present invention is a thermosetting resin film, and the resin film before thermosetting is used as a first test piece, and the heat release amount of the heat release peak in the range of 100 to 300 ℃ obtained by analyzing the first test piece by Differential Scanning Calorimetry (DSC) under a constant temperature rise condition at a temperature rise rate of 10 ℃/min is 100J/g or less.
The resin film of the present embodiment is suitable for application to an uneven surface. Further, the resin film of the present embodiment has thermosetting properties, and the protective film can be formed by heat curing. The resin film of the present embodiment is suitably used for protecting the uneven surface and the side surface of the semiconductor chip. Hereinafter, in the present specification, unless otherwise specified, the resin film means a thermosetting resin film, and "curing" of the resin film means "thermosetting".
When the resin film of the present embodiment is applied to the uneven surface while being heated, the softened resin film spreads between the convex portions so as to cover the convex portions, and closely adheres to the uneven surface, and covers the surfaces of the convex portions, particularly the surfaces of the portions in the vicinity of the uneven surface, thereby filling the base portions of the convex portions. In this case, it is preferable that convex portions of the uneven surface penetrate the resin film, and upper portions of the convex portions protrude from the resin film. Further, when the uneven surface has fine grooves, such grooves can be filled with the resin film, and occurrence of curing failure in the resin film when heat treatment for thermosetting is performed after filling can be suppressed. The reason why the curing failure of the resin film can be suppressed in this manner is that the heat release amount of the first test piece of the resin film is 100J/g or less.
When the resin film of the present embodiment is bonded to the uneven surface, the heating temperature and the bonding pressure of the resin film may be appropriately adjusted depending on other bonding conditions and the width and depth of the groove on the uneven surface, and may be set to be the same as those in the case of bonding to the bump forming surface of the semiconductor wafer, which will be described later, for example.
The degree of filling of the grooves on the uneven surface with the resin film or the protective film (in this specification, sometimes referred to as "filling suitability of the grooves") can be confirmed by observing the uneven surface provided with the resin film or the protective film using an optical microscope.
The degree of generation of machining chips that may be generated when cutting the resin film subjected to the heat treatment for thermosetting can be confirmed by observing the intersection of the cutting lines using an optical microscope.
When the resin film of the present embodiment is attached to the uneven surface, a composite sheet including the resin film of the present embodiment can be used. The composite sheet is described in detail below.
More specifically, the object to which the resin film is attached, which has the uneven surface, may be, for example, a semiconductor wafer having bumps.
That is, the resin film can be attached to the semiconductor wafer before being divided into semiconductor chips. In this case, the resin film is used by being attached to a surface of a semiconductor wafer having bumps.
In this specification, the surfaces of the semiconductor wafer and the semiconductor chip having the bumps are sometimes referred to as "bump forming surfaces".
The resin film is bonded to the bump forming surface while being heated, and the softened resin film spreads between the bumps so as to cover the bumps, adheres to the bump forming surface, and covers the surfaces of the bumps, particularly the surfaces of the portions near the bump forming surface, thereby filling the base portions of the bumps. In this case, the bumps on the bump forming surface preferably penetrate the resin film, and the tops of the bumps preferably protrude from the resin film. Further, when the bump forming surface has fine grooves, such grooves can be filled with the resin film.
Then, the resin film provided on the bump forming surface and filled in the groove is cured in this state, and finally the first protective film is formed. The resin film of the present embodiment suppresses curing failure by setting the heat release of the first test piece produced using the resin film to 100J/g or less.
In this specification, such a protective film provided on the bump formation surface of the semiconductor wafer or the semiconductor chip is referred to as a "first protective film". The protective film provided on the surface (i.e., the back surface) of the semiconductor wafer or the semiconductor chip opposite to the bump formation surface is referred to as a "second protective film".
The resin film is thermosetting and may have both thermosetting and energy ray-curable properties.
In the present specification, "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of the energy ray include ultraviolet rays, radiation, and electron beams. The ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp (fusion lamp), a xenon lamp, a black light lamp, an LED lamp, or the like as an ultraviolet ray source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.
In the present specification, "energy ray-curable property" refers to a property of curing by irradiation with an energy ray, and "non-energy ray-curable property" refers to a property of not curing even by irradiation with an energy ray.
Further, "non-curable" means a property that it is not cured even by any means such as heating or irradiation with energy rays.
In order to analyze the amount of heat corresponding to the heat of reaction at the time of curing of the resin film, in the present embodiment, a measurement value of an exotherm of the resin film measured by Differential Scanning Calorimetry (DSC) is used. The first test piece of the resin film before heat curing was used for measuring the heat release amount of the resin film. The first test piece is preferably a laminated film in which a plurality of single-layer resin films having a thickness of less than 0.5mm are laminated, from the viewpoint of being suitable for DSC analysis and easy to manufacture. Furthermore, it is preferable to use 5mg or more of the test piece.
The heat release is a heat release in the range of 100 to 300 ℃ obtained by DSC analysis of the first test piece measured under constant temperature rise conditions at a temperature rise rate of 10 ℃/min. The heat release amount can be obtained as an integral value of a heat release peak in a range of 100 to 300 ℃ in a DSC curve obtained by DSC analysis.
The heat release amount of the first test piece is 100J/g or less, for example, preferably 10 to 100J/g, more preferably 50 to 90J/g, and further preferably 60 to 80J/g. When the heat dissipation amount is less than the upper limit value, a curing failure of the resin film is less likely to occur even in a state where heat transfer to the resin film is likely to be uneven, such as when the resin film filled in the fine grooves is thermally cured. Further, by setting the heat release amount to the lower limit value or more, thermosetting of the resin film can be favorably exhibited.
The exothermic amount of the first test piece can be easily adjusted by adjusting the kind or content of the component contained in the resin film. For this reason, the kind or content of the component contained in the composition for forming a resin film may be adjusted. For example, when the composition (III) for forming a thermosetting resin film described later is used, the amount of heat generation can be easily adjusted by adjusting the type or content of the main components such as the thermosetting component (B) (e.g., the epoxy resin (B1) and the thermosetting agent (B2)) and the filler (D) in the composition.
For example, if the content of the thermosetting resin film and the thermosetting component (B) of the composition (III) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is reduced, the value of the heat release amount tends to be reduced.
In the present embodiment, when the resin film having a diameter of 25mm and a thickness of 1mm is used as a second test piece, the second test piece is strained at 90 ℃ and a frequency of 1Hz, the storage modulus of the second test piece is measured, and the storage modulus of the second test piece when the strain of the second test piece is 1% is Gc1 and the storage modulus of the second test piece when the strain of the second test piece is 300% is Gc300, the X value calculated by the following formula is preferably 19 or more and less than 10000(19 ≦ X value < 10000).
X＝Gc1/Gc300
In the case of attaching such a resin film to the uneven surface, when the convex portions of the uneven surface penetrate the resin film and the upper portions of the convex portions protrude from the resin film, the resin film can be inhibited from remaining on the upper portions of the convex portions. It is needless to say that the cured product of the resin film in this state is prevented from adhering to the upper portion of the convex portion. Further, since the sticking-completed resin film can be prevented from coming out of the original size, for example, the resin film can be prevented from coming out of the uneven surface. Further, it is possible to suppress so-called unevenness, in which, in a state where the resin film and the cured product thereof are provided on the uneven surface, a region other than an upper portion (for example, a base portion near the uneven surface) of a convex portion of the uneven surface or a region near the convex portion of the uneven surface is not covered with the resin film and the cured product thereof and is unintentionally exposed.
In this manner, when the X value is 19 or more and less than 10000, the resin film has more excellent characteristics in that the convex portion can be exposed and the entire uneven surface can be covered with the resin film itself and the cured product thereof.
The second test piece to be subjected to the strain dispersion measurement has a film shape, and the planar shape thereof is a circular shape.
The second test piece may be a single layer of the resin film having a thickness of 1mm, but is preferably a laminated film formed by laminating a plurality of single layers of the resin film having a thickness of less than 1mm from the viewpoint of easy production.
The thicknesses of the resin films constituting the plurality of individual layers of the laminate film may be all the same or all different, or may be partially the same, but are preferably all the same from the viewpoint of ease of production.
In the present specification, the "storage modulus of the second test piece" is not limited to Gc1 and Gc300, and means "storage modulus of the second test piece corresponding to strain when strain is generated in the second test piece of the resin film having a diameter of 25mm and a thickness of 1mm under the conditions of a temperature of 90 ℃ and a frequency of 1 Hz".
When the resin film is attached to the uneven surface of the attachment object, the degree of strain of the resin film greatly differs between an intermediate stage in which the resin film is projected through the upper part of the convex part of the uneven surface (the upper part of the convex point when the attachment object is a semiconductor wafer having a convex point) and a final stage in which the resin film is filled in the base part of the convex part after the resin film is projected through the upper part of the convex part. More specifically, the strain of the resin film in the intermediate stage is large, and the strain of the resin film in the final stage is small.
The resin film of the present embodiment employs Gc1 as the storage modulus of the resin film when the strain is small, and Gc300 as the storage modulus of the resin film when the strain is large, and the X value (═ Gc1/Gc300) is limited to a specific range so that Gc1 is high and Gc300 is low, whereby the excellent effects described above are exhibited.
Whether or not the resin film remains on the upper portions of the convex portions of the uneven surface can be confirmed by, for example, obtaining SEM image data of the upper portions of the convex portions.
Whether or not the resin film protrudes from the uneven surface and whether or not the resin film is uneven on the uneven surface can be confirmed by, for example, obtaining SEM image data of a corresponding portion on the uneven surface.
In the resin film, the value of X may be, for example, 5000 or less, 2000 or less, 1000 or less, 500 or less, 300 or less, 100 or less, or 70 or less.
For example, the value of X may be any one of 19 to 5000, 25 to 2000, 30 to 1000, 35 to 500, 40 to 300, 45 to 100, and 50 to 70.
The larger the value of X, the better the filling suitability of the trench tends to be.
Even if the other resin film having an X value of 10000 or more is stuck to the uneven surface and the upper part of the convex part protrudes from the other resin film, the effect of suppressing unevenness is not observed, and the cured product of the other resin film is in a state where unevenness is generated.
In the resin film, Gc1 is preferably such that the X value is 19 or more and less than 10000.
However, as described above, Gc1 is preferably 1 × 10 from the viewpoint of exerting the effect of suppressing the resin film from remaining on the upper portions of the convex portions, the effect of suppressing the emergence of the resin film, and the effect of suppressing the unevenness of the resin film and its cured product at a high level4～1×106Pa, more preferably 1X 105～7×105Pa。
In the resin film, Gc300 is not particularly limited as long as the X value is 19 or more and less than 10000.
However, for the same reason as Gc1, Gc300 is preferably 1 to 30000Pa, and may be, for example, 1 to 5000Pa, or 5000 to 30000 Pa.
In the resin film, the above conditions are preferably satisfied at the same time, that is, it is preferable that: gc1 is 1X 104～1×106Pa, preferably 1X 105～7×105Pa, and Gc300 is 1-30000 Pa, 1-5000 Pa or 5000-30000 Pa.
The storage modulus of the resin film is not limited to Gc1 and Gc300, and can be easily adjusted by adjusting the type or content of the component contained in the resin film. For this reason, the kind or content of the component contained in the composition for forming a resin film may be adjusted. For example, when the thermosetting resin film-forming composition (III) described later is used, the storage modulus of the resin film can be easily adjusted by adjusting the type or content of the main component such as the polymer component (a) and the filler (D) in the composition, or the type or content of the additive (I) such as a rheology control agent, a surfactant, or a silicone oil.
For example, if the content of the filler (D) or the additive (I) in the thermosetting resin film and the composition (III) is increased, the X value is likely to increase.
As described later, the resin film of the present embodiment can form a composite sheet by being laminated with a support sheet, for example.
Fig. 1 is a sectional view schematically showing one example of a resin film of one embodiment of the present invention.
For the sake of easy understanding of the features of the present invention, important parts of the drawings used in the following description may be enlarged for convenience, and the dimensional ratios of the respective components are not necessarily the same as those in reality.
The resin film 12 shown here includes a first release film 151 on one surface (in this specification, sometimes referred to as a "first surface") 12a thereof, and a second release film 152 on the other surface (in this specification, sometimes referred to as a "second surface") 12b opposite to the first surface 12 a.
Such a resin film 12 is suitably stored in a roll form, for example.
The heat release amount of the first test piece of the resin film 12 is 100J/g or less.
The X value of the second test piece of the resin film 12 is preferably 19 or more and less than 10000.
Both the first release film 151 and the second release film 152 may be known release films.
The first release film 151 and the second release film 152 may be the same release film as each other, or may be different release films from each other, for example, release films having different peeling forces required for peeling from the resin film 12.
In the resin film 12 shown in fig. 1, an exposed surface formed by removing any one of the first release film 151 and the second release film 152 is a surface to be stuck to the uneven surface. Then, the exposed surface formed by removing the remaining one of the first release film 151 and the second release film 152 is a surface to be attached to another layer (for example, a buffer layer, an adhesive layer, or the like) constituting a composite sheet described later.
Fig. 1 shows an example in which the release film is provided on both sides (the first side 12a and the second side 12b) of the resin film 12, but the release film may be provided only on any one side of the resin film 12, that is, only on the first side 12a or only on the second side 12 b.
The resin film of the present embodiment contains a resin component, and may or may not contain a component other than the resin component.
Examples of a preferable resin film include a resin film containing a resin component, a thermosetting component, and a filler, and if necessary, containing various additives which are not included in any of these components (the resin component, the thermosetting component, and the filler) and have an effect of adjusting the storage modulus of the resin film.
Examples of the additive having an effect of adjusting the storage modulus of the resin film include a rheology control agent (thixotropic agent), a surfactant, and silicone oil.
When the resin film is protruded from an initial size when the resin film is applied to an attachment object such as an uneven surface, the resin film in a protruded state is viewed from above, the maximum value of the length of a line segment connecting two different points on the outer periphery of the resin film is obtained, the value of the width of the resin film in the initial position (i.e., before protrusion) at a position overlapping the line segment showing the maximum value is further obtained, and the value of the width of the resin film is subtracted from the maximum value of the length of the line segment, whereby the amount of protrusion of the resin film can be calculated.
Fig. 2 is a plan view schematically illustrating the amount of protrusion of the resin film when the planar shape of the resin film is circular.
In the drawings subsequent to fig. 2, the same reference numerals as those in the already-described drawings are assigned to the same components as those shown in the already-described drawings, and detailed description thereof is omitted.
The resin film 101 shown here is in a state of being stuck to the sticking object 102 as if it were in a state of being protruded from its original size. Reference numeral 101' denotes a resin film of an initial size, which is simply illustrated for the sake of easy understanding of the amount of protrusion. The planar shape of the initial resin film 101' is circular here, but the planar shape of the resin film 101 in the protruded state is not circular. However, this is only an example, and the planar shape of the resin film 101 in the protruded state is not limited to the shape shown here.
In order to determine the amount of protrusion of the resin film 101, it is only necessary to determine a point 1010a connecting the outer periphery 1010 of the resin film 101 and another point different from the pointLength D of line segment of point 1010b1Further, the width value D of the resin film 101' at the initial position (i.e., before the emergence) at the position overlapping with the line segment showing the maximum value is obtained0And (4) finishing. D1And D0Difference (D)1-D0) The amount of the emissions.
When the line segment showing the maximum value in the resin film 101 is viewed in a plan view, the line segment may pass through the center of the original resin film 101 ', and in this case, the width of the original resin film 101 ' at the position overlapping the line segment showing the maximum value is the diameter of the resin film 101 '.
Although the amount of protrusion of the resin film when the planar shape of the resin film is a circular shape has been described with reference to the drawings, the amount of protrusion of the resin film can be calculated by the same method when the planar shape is a shape other than a circular shape.
The resin film may be composed of one layer (single layer) or a plurality of layers of two or more layers. When the resin film is composed of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
In the present specification, the phrase "a plurality of layers may be the same or different from each other" means "all the layers may be the same or all the layers may be different from each other, and only a part of the layers may be the same", and "a plurality of layers are different from each other" means "at least one of the constituent material and the thickness of each layer is different from each other", not limited to the case of the resin film.
The thickness of the resin film is preferably 1 to 100 μm, more preferably 5 to 80 μm, and particularly preferably 5 to 60 μm. When the thickness of the resin film is not less than the lower limit value, the resin film exhibits higher effects. For example, when the protective film is formed using a resin film, a protective film having higher protective ability can be formed. On the other hand, when the thickness of the resin film is not more than the upper limit, the thickness can be suppressed from becoming excessively thick.
Here, the "thickness of the resin film" refers to the thickness of the entire resin film, and for example, the thickness of the resin film composed of a plurality of layers refers to the total thickness of all the layers constituting the resin film.
In the present specification, unless otherwise specified, "thickness" is a value represented by an average value of thicknesses measured at 5 randomly selected positions, and can be obtained using a constant pressure thickness gauge in accordance with JIS K7130.
Composition for Forming resin film
The resin film can be formed using a resin film-forming composition containing a constituent material thereof. For example, the resin film can be formed by applying a resin film-forming composition to a surface to be formed and drying the composition as necessary. The content ratio of the components that do not vaporize at ordinary temperature in the composition for forming a resin film is generally the same as the content ratio of the components in the resin film.
In the present specification, "normal temperature" means a temperature at which cooling or heating is not particularly performed, that is, a normal temperature, and includes, for example, a temperature of 15 to 25 ℃.
The thermosetting resin film can be formed using the composition for forming a thermosetting resin film. In the present specification, when the resin film has both properties of thermosetting and energy ray-curable properties, if the contribution of thermosetting of the resin film to curing (for example, formation of a protective film) is larger than the contribution of energy ray-curing to curing, the resin film is regarded as a thermosetting resin film. In contrast, if the energy ray curing of the resin film contributes more to the curing than the heat curing, the resin film is regarded as an energy ray-curable resin film.
The coating of the resin film-forming composition may be carried out by a known method, and examples thereof include methods using various coaters such as a knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a curtain coater, a die coater, a knife coater, a screen coater, a meyer bar coater, and a kiss coater.
The drying conditions of the resin film-forming composition are not particularly limited. However, when the resin film-forming composition contains a solvent described later, it is preferably dried by heating. The solvent-containing resin film-forming composition is preferably dried by heating at 70 to 130 ℃ for 10 seconds to 5 minutes, for example. Among these, the composition for forming a thermosetting resin film is preferably dried by heating so as not to thermally cure the composition itself and the thermosetting resin film formed from the composition.
The thermosetting resin film and the energy ray-curable resin film will be described in further detail below.
Very good thermosetting resin film
The curing conditions for curing the thermosetting resin film to obtain a cured product, particularly for forming the protective film, are not particularly limited as long as the cured product has a degree of curing sufficient to exert its function, and may be appropriately selected depending on the type of the thermosetting resin film, the application of the cured product, and the like.
For example, when the protective film is formed, the heating temperature for curing the thermosetting resin film is preferably 100 to 200 ℃, more preferably 110 to 170 ℃, and particularly preferably 120 to 150 ℃. The heating time during the heat curing is preferably 0.5 to 5 hours, more preferably 0.5 to 4 hours, and particularly preferably 1 to 4 hours. The thermosetting resin film can be cured while being pressurized, and the pressure in this case is preferably 0.1 to 1 MPa.
< composition for Forming thermosetting resin film >
Examples of the composition for forming a thermosetting resin film include a composition (III) for forming a thermosetting resin film containing a polymer component (a), a thermosetting component (B) and a filler (D) (in the present specification, the composition may be simply referred to as "composition (III)").
[ Polymer component (A) ]
The polymer component (a) is a polymer compound for imparting film-forming properties, flexibility, and the like to a thermosetting resin film. In addition, in the present specification, the polymer compound also includes a product of polycondensation reaction.
The polymer component (a) contained in the composition (III) and the thermosetting resin film may be one type or two or more types, and when two or more types are contained, the combination and ratio thereof may be arbitrarily selected.
Examples of the polymer component (a) include polyvinyl acetal, acrylic resin, urethane resin (urethane resin), phenoxy resin, silicone resin (silicone resin), and saturated polyester resin.
Among them, the polymer component (a) is preferably polyvinyl acetal.
As the polyvinyl acetal in the polymer component (a), known polyvinyl acetals can be mentioned.
Among these, preferable polyvinyl acetals include polyvinyl formal and polyvinyl butyral, and more preferable polyvinyl butyral.
Examples of the polyvinyl butyral include polyvinyl butyrals having structural units represented by the following formulae (i) -1, (i) -2, and (i) -3.
[ chemical formula 1]
Figure BDA0003603864300000181
Wherein l, m and n are each independently an integer of 1 or more.
The weight average molecular weight (Mw) of the polyvinyl acetal is preferably 5000 to 200000, and more preferably 8000 to 100000. By making the weight average molecular weight of the polyvinyl acetal in such a range, the following effects become higher: when the thermosetting resin film is attached to the uneven surface, the thermosetting resin film sufficiently fills the fine grooves on the uneven surface and suppresses the peeling of the protective film from the uneven surface (for example, when the thermosetting resin film is attached to the bump forming surface, the thermosetting resin film sufficiently fills the fine grooves on the bump forming surface and suppresses the peeling of the protective film from the bump forming surface; the same applies hereinafter); the effect of suppressing the thermosetting resin film remaining on the upper portions of the convex portions of the uneven surface when the thermosetting resin film is attached to the uneven surface (for example, the effect of suppressing the thermosetting resin film remaining on the upper portions of the bumps when the thermosetting resin film is attached to the bump forming surface; the same applies hereinafter); an effect of suppressing the thermosetting resin film from coming out of the original size on the uneven surface (for example, an effect of suppressing the thermosetting resin film from coming out of the original size on the bump forming surface when the thermosetting resin film is attached to the bump forming surface; the same applies hereinafter); and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface (for example, an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the bump forming surface when the thermosetting resin film is attached to the bump forming surface; the same applies hereinafter).
In the present specification, unless otherwise specified, "weight average molecular weight" refers to a polystyrene equivalent value measured by a Gel Permeation Chromatography (GPC) method.
The glass transition temperature (Tg) of the polyvinyl acetal is preferably 40 to 80 ℃, more preferably 50 to 70 ℃. When the Tg of the polyvinyl acetal is in such a range, the following effects are further enhanced when the thermosetting resin film is bonded to the uneven surface: an effect of suppressing the thermosetting resin film from remaining on the upper portions of the convex portions of the uneven surface; an effect of suppressing the protrusion of the thermosetting resin film on the uneven surface; and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface.
The ratio of 3 or more monomers constituting the polyvinyl acetal can be arbitrarily selected.
As the acrylic resin in the polymer component (a), a known acrylic polymer can be mentioned.
The weight average molecular weight (Mw) of the acrylic resin is preferably 5000 to 1000000, and more preferably 8000 to 800000. When the weight average molecular weight of the acrylic resin is in such a range, the following effects are further exhibited when the thermosetting resin film is stuck to the uneven surface: an effect of suppressing the thermosetting resin film from remaining on the upper portions of the convex portions of the uneven surface; an effect of suppressing the protrusion of the thermosetting resin film on the uneven surface; and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface.
The glass transition temperature (Tg) of the acrylic resin is preferably-50 to 70 ℃, and more preferably-30 to 60 ℃. When the Tg of the acrylic resin is in such a range, the following effects are further obtained when the thermosetting resin film is stuck to the uneven surface: an effect of suppressing the thermosetting resin film from remaining on the upper portions of the convex portions of the uneven surface; an effect of suppressing the protrusion of the thermosetting resin film on the uneven surface; and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface.
When the acrylic resin has two or more kinds of structural units, the glass transition temperature (Tg) of the acrylic resin can be calculated using the Fox equation. As the Tg of the monomer from which the structural unit is derived, the value described in a polymer data manual or an adhesion manual can be used.
The acrylic resin may be composed of only one monomer, or two or more monomers, and when two or more monomers are used, the combination and ratio thereof may be arbitrarily selected.
Examples of the acrylic resin include polymers of one or two or more kinds of (meth) acrylic acid esters;
copolymers of two or more monomers selected from (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylolacrylamide;
and copolymers of one or more (meth) acrylic acid esters with one or more monomers selected from (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylolacrylamide.
In the present specification, "(meth) acrylic acid" is a concept including "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth) acrylic acid, for example, "(meth) acrylate" is a concept including "acrylate" and "methacrylate", and "(meth) acryl" is a concept including "acryl" and "methacryl".
Examples of the (meth) acrylic ester constituting the acrylic resin include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, dodecyl (meth) acrylate, n-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, and the like, Alkyl (meth) acrylates having a chain structure in which the alkyl group constituting the alkyl ester is 1 to 18 carbon atoms, such as tetradecyl (meth) acrylate (myristyl (meth) acrylate), pentadecyl (meth) acrylate, hexadecyl (meth) acrylate (palmityl (meth) acrylate), heptadecyl (meth) acrylate, and octadecyl (meth) acrylate (stearyl (meth) acrylate);
cycloalkyl (meth) acrylates such as isobornyl (meth) acrylate and dicyclopentanyl (meth) acrylate;
aralkyl (meth) acrylates such as benzyl (meth) acrylate;
cycloalkenyl (meth) acrylates such as dicyclopentenyl (meth) acrylate;
cycloalkenyloxyalkyl (meth) acrylates such as dicyclopentenyloxyethyl (meth) acrylate;
(meth) acrylic acid imide;
glycidyl group-containing (meth) acrylates such as glycidyl (meth) acrylate;
hydroxyl group-containing (meth) acrylates such as hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate;
and substituted amino group-containing (meth) acrylates such as N-methylaminoethyl (meth) acrylate. Here, the "substituted amino group" refers to a group in which one or two hydrogen atoms of an amino group are substituted with a group other than a hydrogen atom.
The acrylic resin may have a functional group capable of bonding to another compound, such as a vinyl group, (meth) acryloyl group, amino group, hydroxyl group, carboxyl group, or isocyanate group. The functional group of the acrylic resin may be bonded to another compound via a crosslinking agent (F) described later, or may be directly bonded to another compound without via the crosslinking agent (F). The acrylic resin is bonded to another compound through the functional group, and thus, for example, the reliability of a package obtained using a thermosetting resin film tends to be improved.
In the composition (III), the proportion of the content of the polymer component (a) to the total content of all components except the solvent (i.e., the proportion of the content of the polymer component (a) in the thermosetting resin film to the total mass of the thermosetting resin film) is preferably 5 to 35% by mass, more preferably 5 to 27% by mass, regardless of the kind of the polymer component (a).
[ thermosetting component (B) ]
The thermosetting component (B) is a component having thermosetting properties and used for thermosetting the thermosetting resin film to form a hard cured product.
The thermosetting component (B) contained in the composition (III) and the thermosetting resin film may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
Examples of the thermosetting component (B) include epoxy thermosetting resins, polyimide resins, and unsaturated polyester resins.
Among them, the thermosetting component (B) is preferably an epoxy thermosetting resin.
(epoxy thermosetting resin)
The epoxy thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2).
The epoxy thermosetting resin contained in the composition (III) and the thermosetting resin film may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
Epoxy resin (B1)
Examples of the epoxy resin (B1) include known epoxy resins, and examples thereof include polyfunctional epoxy resins, biphenyl compounds, bisphenol a diglycidyl ether and hydrogenated products thereof, o-cresol novolac epoxy resins, dicyclopentadiene epoxy resins, biphenyl epoxy resins, bisphenol a epoxy resins, bisphenol F epoxy resins, and epoxy resins having a phenylene skeleton and having at least two functionalities.
The epoxy resin (B1) may be an epoxy resin having an unsaturated hydrocarbon group. The compatibility of the epoxy resin having an unsaturated hydrocarbon group with the acrylic resin is higher than that of the epoxy resin having no unsaturated hydrocarbon group with the acrylic resin. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, for example, the reliability of a package obtained by using a thermosetting resin film tends to be improved.
Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a part of epoxy groups of a polyfunctional epoxy resin is converted into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by addition reaction of (meth) acrylic acid or a derivative thereof with an epoxy group.
Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin.
The unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include an ethylene group (vinyl group), a 2-propenyl group (allyl group), (meth) acryloyl group, and (meth) acrylamido group, with acryloyl group being preferred.
The number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 30000, more preferably 400 to 10000, and particularly preferably 500 to 3000, from the viewpoints of curability of the thermosetting resin film and strength and heat resistance of a cured product (for example, a protective film) of the thermosetting resin film.
The epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1000g/eq, more preferably 100 to 600 g/eq.
One epoxy resin (B1) may be used alone, two or more epoxy resins may be used simultaneously, and when two or more epoxy resins are used simultaneously, the combination and ratio thereof may be arbitrarily selected.
Heat-curing agent (B2)
The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
Examples of the thermosetting agent (B2) include compounds having two or more functional groups reactive with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and a group obtained by anhydrizing an acid group, and the like, and a phenolic hydroxyl group, an amino group, or a group obtained by anhydrizing an acid group are preferable, and a phenolic hydroxyl group or an amino group is more preferable.
Examples of the phenol curing agent having a phenolic hydroxyl group in the heat curing agent (B2) include polyfunctional phenol resins, biphenol, novolak-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins.
Examples of the amine-based curing agent having an amino group in the thermosetting agent (B2) include dicyandiamide (hereinafter, may be abbreviated as "DICY").
The thermosetting agent (B2) may have an unsaturated hydrocarbon group.
Examples of the unsaturated hydrocarbon group-containing thermosetting agent (B2) include a compound in which a part of the hydroxyl groups of the phenol resin is substituted with an unsaturated hydrocarbon group, a compound in which an unsaturated hydrocarbon group-containing group is directly bonded to an aromatic ring of the phenol resin, and the like.
The unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the above-mentioned epoxy resin having an unsaturated hydrocarbon group.
The number average molecular weight of the resin component such as a polyfunctional phenol resin, a novolak phenol resin, a dicyclopentadiene phenol resin, or an aralkyl phenol resin in the thermosetting agent (B2) is preferably 300 to 30000, more preferably 400 to 10000, and particularly preferably 500 to 3000.
The molecular weight of the non-resin component such as biphenol and dicyandiamide in the thermosetting agent (B2) is not particularly limited, but is preferably 60 to 500, for example.
The heat-curing agent (B2) may be used alone or in combination of two or more, and when two or more are used simultaneously, the combination and ratio thereof may be arbitrarily selected.
In the composition (III) and the thermosetting resin film, the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, and may be, for example, any one of 5 to 150 parts by mass, 10 to 100 parts by mass, and 15 to 75 parts by mass, relative to 100 parts by mass of the content of the epoxy resin (B1). When the content of the thermosetting agent (B2) is not less than the lower limit value, the thermosetting resin film can be more easily cured. When the content of the thermosetting agent (B2) is not more than the upper limit, the moisture absorption rate of the thermosetting resin film is reduced, and the reliability of a package obtained using the thermosetting resin film, for example, is further improved.
In the composition (III), the proportion of the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) relative to the total content of all the components except the solvent (that is, the proportion of the content of the thermosetting component (B) in the thermosetting resin film relative to the total mass of the thermosetting resin film) is preferably 10 to 75 mass%, more preferably 15 to 73 mass, and may be any one of 35 to 70 mass% and 55 to 70 mass%. When the ratio is in such a range, the following effects are more enhanced and a hard cured product (for example, a protective film) can be formed when the thermosetting resin film is attached to the uneven surface: filling fine grooves on the concave-convex surface and inhibiting the poor curing effect of the resin film; an effect of suppressing the thermosetting resin film from remaining on the upper portions of the convex portions of the uneven surface; an effect of suppressing the protrusion of the thermosetting resin film on the uneven surface; and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface.
In particular, as the proportion of the content of the thermosetting component (B) to the total mass of the resin film is lower, the value of the heat release amount of the first test piece is more easily reduced, and the curing failure of the resin film can be more effectively suppressed.
Further, the higher the proportion of the content of the thermosetting component (B) with respect to the total mass of the resin film, the more effectively the filling suitability of the groove can be improved. This is presumably because the thermosetting component (B) before curing is a small molecule and exhibits excellent fluidity.
Further, from the viewpoint that such an effect can be more remarkably obtained, the content of the thermosetting component (B) may be appropriately adjusted according to the kind of the polymer component (a).
[ Filler (D) ]
By adjusting the amount of the filler (D) in the composition (III) and the thermosetting resin film, the X value can be adjusted more easily. By increasing the amount of the filler (D) in the composition (III) and the thermosetting resin film, the content of the thermosetting component can be adjusted to be small, and the heat release amount of the first test piece can be easily reduced. By using the thermosetting resin film containing the filler (D), the moisture absorption rate of a cured product (for example, a protective film) of the thermosetting resin film can be reduced, or the heat dissipation property can be improved.
The filler (D) may be any of an organic filler and an inorganic filler, but is preferably an inorganic filler.
Examples of preferable inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like; beads (beads) obtained by spheroidizing these inorganic fillers; surface modifications of these inorganic filler materials; single crystal fibers of these inorganic filler materials; glass fibers, and the like.
Among them, the inorganic filler is preferably silica or alumina.
The filler (D) contained in the composition (III) and the thermosetting resin film may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
In the composition (III), the proportion of the content of the filler (D) to the total content of all the components except the solvent (i.e., the proportion of the content of the filler (D) in the thermosetting resin film to the total mass of the thermosetting resin film) is preferably 10 to 65% by mass, more preferably 15 to 55% by mass, and for example, may be any one of 15 to 40% by mass and 15 to 30% by mass, or may be any one of 30 to 55% by mass and 40 to 55% by mass. When the ratio is in such a range, the following effects are further exhibited when the thermosetting resin film is attached to the uneven surface: filling fine grooves on the concave-convex surface and inhibiting the poor curing effect of the resin film; an effect of suppressing the thermosetting resin film from remaining on the upper portions of the convex portions of the uneven surface; an effect of suppressing the protrusion of the thermosetting resin film on the uneven surface; and an effect of suppressing unevenness of the thermosetting resin film and the cured product thereof on the uneven surface.
[ additive (I) ]
The composition (III) and the thermosetting resin film may contain an additive (I). Examples of the additive (I) include components for adjusting the value of X.
Among them, preferable additives (I) for more easily adjusting the value of X include rheology control agents, surfactants, silicone oils, and the like.
More specifically, examples of the rheology control agent include polyhydroxycarboxylic acid esters, polycarboxylic acids, and polyamide resins.
Examples of the surfactant include modified siloxane and acrylic polymer.
Examples of the silicone oil include aralkyl-modified silicone oil and modified polydimethylsiloxane, and examples of the modifying group include aralkyl; polar groups such as hydroxyl groups; and groups having an unsaturated bond such as vinyl and phenyl.
Examples of the additive (I) include, in addition to the above additives, various other general-purpose additives such as a plasticizer, an antistatic agent, an antioxidant, a gettering agent (gettering agent), an ultraviolet absorber, and a thickener.
The additive (I) contained in the composition (III) and the thermosetting resin film may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
The content of the additive (I) in the composition (III) and the thermosetting resin film is not particularly limited, and may be appropriately adjusted depending on the kind and purpose thereof.
For example, when the purpose of adjusting the value of X is to be achieved, the content of the additive (I) in the composition (III) is preferably 0.5 to 10% by mass, more preferably 0.5 to 7% by mass, and still more preferably 0.5 to 5% by mass, relative to the total content of all the components except the solvent (i.e., the content of the additive (I) in the thermosetting resin film relative to the total mass of the thermosetting resin film).
[ curing Accelerator (C) ]
The composition (III) and the thermosetting resin film may contain a curing accelerator (C). The curing accelerator (C) is a component for adjusting the curing speed of the composition (III).
Examples of the preferable curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with a group other than a hydrogen atom) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4, 5-dimethylolimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphines in which one or more hydrogen atoms are substituted with an organic group); tetraphenylboron salts such as tetraphenylphosphonium tetraphenylphosphonate and triphenylphosphine tetraphenylboronate.
The curing accelerator (C) contained in the composition (III) and the thermosetting resin film may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
When the curing accelerator (C) is used, the content of the curing accelerator (C) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the thermosetting component (B) in the composition (III) and the thermosetting resin film. By setting the content of the curing accelerator (C) to the lower limit or more, the effect of using the curing accelerator (C) can be more remarkably obtained. When the content of the curing accelerator (C) is not more than the upper limit, for example, the effect of suppressing the occurrence of segregation of the highly polar curing accelerator (C) in the thermosetting resin film by moving to the side of the adhesive interface with the adherend under high temperature and high humidity conditions is increased, and for example, the reliability of the package obtained using the thermosetting resin film is further improved.
[ coupling agent (E) ]
The composition (III) and the thermosetting resin film may contain a coupling agent (E). By using a coupling agent having a functional group reactive with an inorganic compound or an organic compound as the coupling agent (E), the adhesiveness and close adhesion of the thermosetting resin film to an adherend can be improved. Further, by using the coupling agent (E), the water resistance of a cured product (for example, a protective film) of the thermosetting resin film is improved without impairing the heat resistance.
The coupling agent (E) is preferably a compound having a functional group reactive with the functional group of the polymer component (a), the thermosetting component (B), or the like, and more preferably a silane coupling agent.
Examples of the preferable silane coupling agent include 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3- (2-aminoethylamino) propyltrimethoxysilane, 3- (2-aminoethylamino) propylmethyldiethoxysilane, 3- (phenylamino) propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropyltriethoxysilane, and the like, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane and the like.
The coupling agent (E) contained in the composition (III) and the thermosetting resin film may be one kind only, or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
When the coupling agent (E) is used, the content of the coupling agent (E) in the composition (III) and the thermosetting resin film is preferably 0.03 to 10 parts by mass, more preferably 0.05 to 6 parts by mass, and particularly preferably 0.1 to 3 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (B). By setting the content of the coupling agent (E) to the lower limit value or more, the effects of using the coupling agent (E), that is, improvement in dispersibility of the filler (D) in the resin, improvement in adhesion of the thermosetting resin film to the adherend, and the like can be more remarkably obtained. By making the content of the coupling agent (E) the upper limit value or less, the generation of outgas (outgas) can be further suppressed.
[ crosslinking agent (F) ]
When a substance having a functional group such as a vinyl group, (meth) acryloyl group, amino group, hydroxyl group, carboxyl group, or isocyanate group, which is capable of bonding to another compound, is used as the polymer component (a), the composition (III) and the thermosetting resin film may contain a crosslinking agent (F). The crosslinking agent (F) is a component for bonding and crosslinking the functional group in the polymer component (a) with another compound, and by crosslinking in this way, the initial adhesive force and cohesive force of the thermosetting resin film can be adjusted.
Examples of the crosslinking agent (F) include an organic polyisocyanate compound, an organic polyimine compound, a metal chelate crosslinking agent (a crosslinking agent having a metal chelate structure), an aziridine crosslinking agent (a crosslinking agent having an aziridine group), and the like.
Examples of the organic polyisocyanate compound include an aromatic polyisocyanate compound, an aliphatic polyisocyanate compound, and an alicyclic polyisocyanate compound (hereinafter, these compounds may be collectively referred to simply as "aromatic polyisocyanate compound and the like"); trimers, isocyanurates and adducts of the aromatic polyisocyanate compounds and the like; and isocyanate-terminated urethane prepolymers obtained by reacting the aromatic polyisocyanate compound and the like with a polyol compound. The "adduct" refers to a reactant of the aromatic polyisocyanate compound, aliphatic polyisocyanate compound or alicyclic polyisocyanate compound with a low-molecular active hydrogen-containing compound such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. Examples of the adduct include a xylylene diisocyanate adduct of trimethylolpropane described later. Further, "isocyanate-terminated urethane prepolymer" refers to a prepolymer having a urethane bond and having an isocyanate group at a terminal portion of a molecule.
More specifically, examples of the organic polyisocyanate compound include 2, 4-tolylene diisocyanate; 2, 6-toluene diisocyanate; 1, 3-xylylene diisocyanate; 1, 4-xylene diisocyanate; diphenylmethane-4, 4' -diisocyanate; diphenylmethane-2, 4' -diisocyanate; 3-methyl diphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4, 4' -diisocyanate; dicyclohexylmethane-2, 4' -diisocyanate; a compound obtained by adding one or more of toluene diisocyanate, hexamethylene diisocyanate and xylylene diisocyanate to all or part of the hydroxyl groups of a polyol such as trimethylolpropane; lysine diisocyanate, and the like.
Examples of the organic polyimine compound include N, N ' -diphenylmethane-4, 4 ' -bis (1-aziridinecarboxamide), trimethylolpropane-tri- β -aziridinylpropionate, tetramethylolmethane-tri- β -aziridinylpropionate, and N, N ' -toluene-2, 4-bis (1-aziridinecarboxamide) triethylenemelamine.
When an organic polyisocyanate compound is used as the crosslinking agent (F), a hydroxyl group-containing polymer is preferably used as the polymer component (A). When the crosslinking agent (F) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the thermosetting resin film by the reaction of the crosslinking agent (F) with the polymer component (a).
The crosslinking agent (F) contained in the composition (III) and the thermosetting resin film may be only one kind, or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
When the crosslinking agent (F) is used, the content of the crosslinking agent (F) in the composition (III) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the content of the polymer component (A). By setting the content of the crosslinking agent (F) to the lower limit or more, the effect of using the crosslinking agent (F) can be more remarkably obtained. By making the content of the crosslinking agent (F) the upper limit value or less, the excessive use of the crosslinking agent (F) can be suppressed.
[ other ingredients ]
The composition (III) and the thermosetting resin film may contain other components not belonging to any of the polymer component (a), the thermosetting component (B), the filler (D), the additive (I), the curing accelerator (C), the coupling agent (E), and the crosslinking agent (F) as long as the effects of the present invention are not impaired.
Examples of the other components include an energy ray-curable resin and a photopolymerization initiator.
The other component contained in the composition (III) and the thermosetting resin film may be only one kind, or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
The content of the other components in the composition (III) and the thermosetting resin film is not particularly limited, and may be appropriately selected according to the purpose.
[ solvent ]
The composition (III) preferably further contains a solvent. The composition (III) containing a solvent is excellent in handling properties.
The solvent is not particularly limited, but preferable examples thereof include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.
The solvent contained in the composition (III) may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
From the viewpoint of enabling the components contained in the composition (III) to be mixed more uniformly, a more preferable solvent among the solvents contained in the composition (III) is, for example, methyl ethyl ketone.
The content of the solvent in the composition (III) is not particularly limited, and may be appropriately selected depending on the kind of the component other than the solvent, for example.
< preparation method of composition for Forming thermosetting resin film >
The composition for forming a thermosetting resin film such as the composition (III) can be obtained by blending the respective components constituting the composition.
The order of addition of the components in blending is not particularly limited, and two or more components may be added simultaneously.
The method for mixing the components at the time of blending is not particularly limited, and may be appropriately selected from the following known methods: a method of mixing by rotating a stirrer, a stirring blade, or the like; a method of mixing using a mixer (mixer); a method of mixing by applying ultrasonic waves, and the like.
The temperature and time for adding and mixing the components are not particularly limited and may be appropriately adjusted as long as the components are not deteriorated, but the temperature is preferably 15 to 30 ℃.
As an example of a preferable resin film of the present embodiment, a resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is within any range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the resin film contains a polymer component (A) and a thermosetting component (B),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film.
As an example of a preferable resin film of the present embodiment, a resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece by Differential Scanning Calorimetry (DSC) under the condition of constant temperature rise with the temperature rise rate of 10 ℃/min is within the range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the resin film contains a polymer component (A), a thermosetting component (B) and a filler (D),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film, and the content of the filler (D) in the resin film is within a range of 10-65 mass% and 15-55 mass% relative to the total mass of the resin film.
As another example of a preferable resin film in the present embodiment, a resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is within any range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the X value is 19 or more and less than any one of 10000, 19 to 5000, 25 to 2000, 30 to 1000, 35 to 500, 40 to 300, 45 to 100, and 50 to 70,
the resin film contains a polymer component (A), a thermosetting component (B), a filler (D) and an additive (I),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film, the content of the filler (D) in the resin film is within a range of 10-65 mass% and 15-55 mass% relative to the total mass of the resin film,
the content of the additive (I) in the resin film is in any range of 0.5-10 mass%, 0.5-7 mass% and 0.5-5 mass% relative to the total mass of the resin film.
Diamond compact
The composite sheet according to one embodiment of the present invention includes a support sheet and a resin film provided on one surface of the support sheet, wherein the resin film is the resin film according to one embodiment of the present invention.
As described above, by using the composite sheet of the present embodiment, the resin film can be favorably stuck to the uneven surface of the object to which the resin film is to be stuck, and in this case, fine grooves on the uneven surface can be filled, and curing failure of the resin film can be suppressed.
In the present specification, when the resin film is used for forming the first protective film, the composite sheet is referred to as a "first protective film forming sheet", and the support sheet in the first protective film forming sheet is referred to as a "first support sheet".
On the other hand, in order to provide a second protective film on the surface (back surface) of the semiconductor wafer or the semiconductor chip opposite to the bump forming surface, a second protective film forming sheet is used which is configured by including a second protective film forming film for forming the second protective film. The second protective film-forming sheet includes, for example, a dicing sheet and a second protective film-forming film provided on the dicing sheet. When the dicing sheet has the same support sheet as the support sheet, the support sheet is referred to as a "second support sheet".
Similarly, for example, when the first support sheet includes a base material and an adhesive layer, these are referred to as "first base material" and "first adhesive layer", and when the second support sheet includes a base material and an adhesive layer, these are referred to as "second base material" and "second adhesive layer".
Fig. 3 is a sectional view schematically showing one example of the composite sheet of the present embodiment.
The composite sheet 1 shown here is configured by including a support sheet 10 and a resin film 12 provided on one surface (in this specification, may be referred to as a "first surface") 10a of the support sheet 10.
The support sheet 10 is configured to include a base material 11, a buffer layer 13 provided on one surface (in this specification, sometimes referred to as a "first surface") 11a of the base material 11, and an adhesive layer 14 provided on a surface (in this specification, sometimes referred to as a "first surface") 13a of the buffer layer 13 opposite to the base material 11 side.
That is, the composite sheet 1 is configured by sequentially laminating the base material 11, the buffer layer 13, the adhesive layer 14, and the resin film 12 in the thickness direction thereof. The adhesive layer 14 is an outermost layer on one side (resin film 12 side) of the support sheet 10, and a surface (in this specification, sometimes referred to as "first surface") 14a of the adhesive layer 14 on the side opposite to the buffer layer 13 side is the same as the first surface 10a of the support sheet 10.
In the composite sheet 1, both the buffer layer 13 and the adhesive layer 14 are disposed between the base material 11 and the resin film 12.
The resin film 12 is the resin film of one embodiment of the present invention described above.
The surface (first surface) 12a of the resin film 12 opposite to the buffer layer 13 side is a surface of the resin film 12 (in other words, the composite sheet 1) to which the uneven surface is attached.
The composite sheet of the present embodiment is not limited to the composite sheet shown in fig. 3, and a part of the structure of the composite sheet shown in fig. 3 may be modified, deleted, or added within a range not to impair the effects of the present invention.
For example, as the support sheet in the composite sheet of the present embodiment, in addition to the support sheet configured by including the base material, the cushion layer, and the adhesive layer, there can be mentioned: a support sheet composed of only a base material; a support sheet comprising a base material and an adhesive layer provided on one surface of the base material; the support sheet is configured to include a base material and a buffer layer provided on one surface of the base material.
When the support sheet includes the base material and the adhesive layer, the adhesive layer is disposed between the base material and the resin film in the composite sheet. When the support sheet includes the base material and the buffer layer, the buffer layer is disposed between the base material and the resin film in the composite sheet.
Among them, the support sheet is more preferably one comprising a base material, a buffer layer, and an adhesive layer.
For example, in the composite sheet of the present embodiment, the support sheet (the support sheet 10 in the composite sheet 1 shown in fig. 3) may have an adhesion layer between the base material (the base material 11 in the composite sheet 1 shown in fig. 3) and the buffer layer (the buffer layer 13 in the composite sheet 1 shown in fig. 3).
The adhesion layer improves adhesion of the base material and the buffer layer, and highly suppresses peeling of the base material and the buffer layer in the composite sheet. Therefore, when the composite sheet including the adhesion layer is used, the laminated structure of the base material, the adhesion layer, and the buffer layer can be maintained more stably.
The adhesion layer is sheet-like or film-like.
Examples of a preferable adhesive layer include an adhesive layer containing ethylene-vinyl acetate copolymer resin (EVA) and the like.
For example, the composite sheet of the present embodiment may be provided with a release film on the outermost layer (the resin film 12 in the composite sheet 1 shown in fig. 3) on the opposite side to the substrate.
Next, the respective layers constituting the composite sheet of the present embodiment will be explained.
Base material of very good
The substrate is in the form of a sheet or a film, and examples of the constituent material include various resins.
Examples of the resin include polyethylene such as Low Density Polyethylene (LDPE), Linear Low Density Polyethylene (LLDPE), and High Density Polyethylene (HDPE); polyolefins other than polyethylene, such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymers, ethylene- (meth) acrylic acid ester copolymers, and ethylene-norbornene copolymers; vinyl chloride-based resins (resins obtained using vinyl chloride as a monomer) such as polyvinyl chloride and vinyl chloride copolymers; polystyrene; a polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2, 6-naphthalate, and wholly aromatic polyesters having aromatic groups in all the structural units; copolymers of two or more of said polyesters; poly (meth) acrylates; a polyurethane; a urethane acrylate; a polyimide; a polyamide; a polycarbonate; a fluororesin; a polyacetal; modified polyphenylene ether; polyphenylene sulfide; polysulfones; polyether ketones, and the like.
Examples of the resin include polymer alloys (polymer alloys) such as a mixture of the polyester and a resin other than the polyester. It is preferable that the amount of the resin other than polyester in the polymer alloy of the polyester and the resin other than polyester is smaller.
Examples of the resin include crosslinked resins obtained by crosslinking one or two or more of the above-exemplified resins; one or two or more kinds of modified resins such as ionomers among the above-exemplified resins are used.
The resin constituting the base material may be one kind or two or more kinds, and when two or more kinds are used, the combination and ratio thereof may be arbitrarily selected.
The substrate may be a single layer (single layer) or a plurality of layers of two or more layers, and in the case of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
The thickness of the base material is preferably 5 to 1000 μm, more preferably 10 to 500 μm, still more preferably 15 to 300 μm, and particularly preferably 20 to 180 μm.
Here, the "thickness of the substrate" refers to the thickness of the entire substrate, and for example, the thickness of the substrate composed of a plurality of layers refers to the total thickness of all the layers constituting the substrate.
The substrate is preferably a substrate having high thickness accuracy, that is, a substrate in which thickness unevenness is suppressed regardless of the position. Among the above-mentioned constituent materials, materials that can be used to form such a base material with high thickness accuracy include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymers, and the like.
The base material may contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, and a softener (plasticizer) in addition to the main constituent material such as the resin.
The base material may be transparent or opaque, may be colored according to the purpose, or may be vapor-deposited with other layers.
When the resin film is energy ray-curable, the substrate preferably transmits energy rays.
The substrate can be produced by a known method. For example, the resin-containing substrate can be produced by molding a resin composition containing the resin.
Very good buffer layer
The buffer layer is in a sheet or film shape and has a buffering action against a force applied to the buffer layer and a layer adjacent thereto. Here, the "layer adjacent to the buffer layer" includes, for example, the resin film, a layer corresponding to a cured product of the resin film (for example, a protective film such as a first protective film), and an adhesive layer.
The material constituting the buffer layer is not particularly limited.
A preferable buffer layer is, for example, a buffer layer containing urethane (meth) acrylate or the like.
In the same manner as the resin film, when the storage modulus of a test piece of a buffer layer having a diameter of 25mm and a thickness of 1mm is measured by straining the test piece at a temperature of 90 ℃ and a frequency of 1Hz, and the storage modulus of the test piece is Gb300, the Gb300 is preferably Gc300 or more (Gb300 ≧ Gc 300). By using the composite sheet satisfying such a condition and attaching the resin film to the uneven surface, the upper portion of the convex portion of the uneven surface (for example, the bump of the semiconductor wafer) is more likely to penetrate the resin film.
As described above, when the test piece of the buffer layer is strained in the range of 0.01% to 1000%, the storage modulus Gb of the test piece is measured, the test piece of the resin film is strained in the range of 0.01% to 1000%, and the storage modulus Gc of the test piece is measured, and when Gb and Gc having the same strain are compared, Gb is more preferably Gc or more (Gb ≧ Gc) in the entire range of 0.01% to 1000%, and Gb is Gc or more in the entire range of 10% to 1000%. By using the composite sheet satisfying such a condition and attaching the resin film to the uneven surface, the upper portion of the convex portion of the uneven surface (for example, the bump of the semiconductor wafer) is more likely to penetrate the resin film.
The buffer layer may be composed of one layer (single layer) or a plurality of layers of two or more layers, and when the buffer layer is composed of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
The thickness of the buffer layer is preferably 150 to 1000 μm, more preferably 150 to 800 μm, further preferably 200 to 600 μm, and particularly preferably 250 to 500 μm.
Here, the "thickness of the buffer layer" refers to the thickness of the entire buffer layer, and for example, the thickness of the buffer layer composed of a plurality of layers refers to the total thickness of all the layers constituting the buffer layer.
Composition for Forming buffer layer
The cushion layer can be formed using a cushion layer-forming composition containing a constituent material of the cushion layer such as the resin. For example, the buffer layer can be formed at a target site by extrusion molding the buffer layer forming composition onto a surface to be formed of the buffer layer. A more specific method for forming the buffer layer will be described in detail later together with a method for forming another layer. The content ratio of the components that do not vaporize at normal temperature in the composition for forming the buffer layer is generally the same as the content ratio of the components of the buffer layer.
< composition (V) for forming buffer layer >
Examples of the composition for forming a buffer layer include a composition (V) for forming a buffer layer containing urethane (meth) acrylate.
The content of the composition (V) for forming a buffer layer and the urethane (meth) acrylate in the buffer layer is preferably 80 to 100% by mass.
[ other ingredients ]
The composition (V) for forming a buffer layer and the buffer layer may contain other components than urethane (meth) acrylate within a range not to impair the effects of the present invention.
The other components are not particularly limited and may be appropriately selected according to the purpose.
The composition (V) for forming a buffer layer and the other components contained in the buffer layer may be only one kind, or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
The content of the composition (V) for forming a buffer layer and the other components of the buffer layer is not particularly limited, and may be appropriately selected according to the purpose.
Adhesive layer
The adhesive layer is in the form of sheet or film and contains an adhesive.
Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins, and acrylic resins are preferred.
In the present specification, "adhesive resin" includes a resin having adhesiveness and a resin having adhesiveness. For example, the adhesive resin includes not only a resin having adhesiveness itself but also a resin exhibiting adhesiveness by being used together with other components such as an additive, a resin exhibiting adhesiveness due to the presence of a trigger (trigger) such as heat or water, and the like.
The adhesive agent layer may be composed of one layer (single layer) or a plurality of layers of two or more layers, and when the adhesive agent layer is composed of a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.
The thickness of the adhesive layer is preferably 10 to 180 μm, more preferably 30 to 120 μm, and particularly preferably 40 to 80 μm. By setting the thickness of the adhesive agent layer to be not less than the lower limit value, the effect of providing the adhesive agent layer can be more remarkably obtained. By setting the thickness of the adhesive layer to the upper limit or less, the support sheet can be made thin.
Here, the "thickness of the adhesive agent layer" refers to the thickness of the entire adhesive agent layer, and for example, the thickness of the adhesive agent layer composed of a plurality of layers refers to the total thickness of all layers constituting the adhesive agent layer.
The adhesive layer may be formed using an energy ray-curable adhesive or a non-energy ray-curable adhesive. That is, the adhesive layer may be either energy ray-curable or non-energy ray-curable. The energy ray-curable adhesive agent layer can be easily adjusted in physical properties before and after curing. For example, the semiconductor chip with the first protective film can be picked up more easily by curing the energy ray-curable adhesive layer before picking up the semiconductor chip with the first protective film, which will be described later.
Adhesive composition
The adhesive layer can be formed using an adhesive composition containing an adhesive. For example, the adhesive composition is applied to a surface to be formed of the adhesive layer and dried as necessary, whereby the adhesive layer can be formed at a target site. The content ratio of the components that do not vaporize at ordinary temperature in the adhesive composition is generally the same as the content ratio of the components in the adhesive layer.
The adhesive composition can be applied, for example, by the same method as the application of the resin film-forming composition.
The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described later, it is preferably dried by heating. The adhesive composition containing a solvent is preferably dried at 70 to 130 ℃ for 10 seconds to 5 minutes, for example.
When the adhesive layer is provided on the substrate or the buffer layer, for example, the adhesive composition may be applied to the substrate or the buffer layer and dried as necessary, and the adhesive layer may be laminated on the substrate or the buffer layer. In addition, when the adhesive layer is provided on the substrate or the cushion layer, for example, the adhesive layer may be laminated on the substrate or the cushion layer by applying an adhesive composition to a release film and drying it as necessary to form the adhesive layer on the release film in advance and bonding an exposed surface of the adhesive layer to one surface of the substrate or the cushion layer. In this case, the release film may be removed at any timing in the manufacturing process or the use process of the composite sheet.
When the adhesive layer is energy ray-curable, examples of the energy ray-curable adhesive composition include: an adhesive composition (I-1) comprising an adhesive resin (I-1a) which is not curable with energy rays (hereinafter, may be simply referred to as "adhesive resin (I-1 a)") and an energy ray-curable compound; an adhesive composition (I-2) comprising an energy ray-curable adhesive resin (I-2a) having an unsaturated group introduced into a side chain of the adhesive resin (I-1a) (hereinafter, may be simply referred to as "adhesive resin (I-2 a)"); and an adhesive composition (I-3) comprising the adhesive resin (I-2a) and an energy ray-curable low-molecular-weight compound.
Examples of the adhesive composition (I-1), the adhesive composition (I-2) and the adhesive composition (I-3) include the first adhesive composition (I-1), the first adhesive composition (I-2) and the first adhesive composition (I-3) described in paragraphs 0045 to 0105 of International publication No. 2017/078047.
When the adhesive layer is non-energy ray-curable, examples of the non-energy ray-curable adhesive composition include an adhesive composition (I-4) containing the adhesive resin (I-1 a).
Preparation method of adhesive composition
The adhesive compositions such as the adhesive compositions (I-1) to (I-4) can be obtained by blending the adhesive with components other than the adhesive as required to constitute the adhesive composition.
The order of addition of the components in blending is not particularly limited, and two or more components may be added simultaneously.
The method for mixing the components at the time of blending is not particularly limited, and may be appropriately selected from the following known methods: a method of mixing by rotating a stirrer, a stirring blade, or the like; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves, and the like.
The temperature and time for adding and mixing the components are not particularly limited and may be appropriately adjusted as long as the components are not deteriorated, but the temperature is preferably 15 to 30 ℃.
Resin film-
Since the resin film in the composite sheet of the present embodiment is the same as the resin film described hereinabove, a detailed description thereof is omitted here.
As an example of the preferred composite sheet of the present embodiment, a composite sheet,
the composite sheet comprises a support sheet and a resin film provided on one surface of the support sheet, the support sheet comprises a base material, a buffer layer provided on one surface of the base material, and an adhesive layer provided on a surface of the buffer layer opposite to the base material side, the buffer layer and the adhesive layer are disposed between the base material and the resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is within any range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the resin film contains a polymer component (A) and a thermosetting component (B),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film.
As another example of the preferred composite sheet of the present embodiment, a composite sheet,
the composite sheet comprises a support sheet and a resin film provided on one surface of the support sheet,
the support sheet comprises a base material, a buffer layer provided on one surface of the base material, and an adhesive layer provided on the surface of the buffer layer opposite to the base material side, wherein the buffer layer and the adhesive layer are arranged between the base material and the resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is within any range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the resin film contains a polymer component (A), a thermosetting component (B) and a filler (D),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film,
the content of the filler (D) in the resin film is within a range of 10-65 mass% and 15-55 mass% relative to the total mass of the resin film.
As still another example of the preferred composite sheet of the present embodiment, there can be mentioned a composite sheet,
the composite sheet comprises a support sheet and a resin film provided on one surface of the support sheet,
the support sheet includes a base material, a buffer layer provided on one surface of the base material, and an adhesive layer provided on a surface of the buffer layer opposite to the base material side, the buffer layer and the adhesive layer being disposed between the base material and the resin film,
the resin film is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is within any range of 100J/g or less, 10-100J/g, 50-90J/g and 60-80J/g,
the X value is 19 or more and less than any one of 10000, 19 to 5000, 25 to 2000, 30 to 1000, 35 to 500, 40 to 300, 45 to 100 and 50 to 70,
the resin film contains a polymer component (A), a thermosetting component (B), a filler (D) and an additive (I),
the content of the polymer component (A) in the resin film is in a range of 5 to 35 mass% and 5 to 27 mass% relative to the total mass of the resin film,
the content of the thermosetting component (B) in the resin film is within a range of 10-75 mass%, 15-73 mass% and 35-70 mass% relative to the total mass of the resin film,
the content of the filler (D) in the resin film is within a range of 10 to 65 mass% and 15 to 55 mass% relative to the total mass of the resin film,
the content of the additive (I) in the resin film is in any range of 0.5-10 mass%, 0.5-7 mass% and 0.5-5 mass% relative to the total mass of the resin film.
Manufacturing method of diamond compact
The composite sheet can be produced by sequentially laminating the layers in a corresponding positional relationship. The formation method of each layer is the same as that explained above.
For example, a composite sheet in which a base material, a cushion layer, an adhesive layer, and a resin film are sequentially laminated in the thickness direction thereof can be manufactured by the following method.
That is, the composition for forming a buffer layer is extrusion-molded onto a base material, and the buffer layer is thereby laminated on the base material. Further, the adhesive composition is applied to the release-treated surface of the release film and dried as necessary, thereby laminating the adhesive layer. Then, the adhesive layer on the release film was laminated to the buffer layer on the substrate, thereby obtaining a release film-equipped laminate sheet in which the substrate, the buffer layer, the adhesive layer, and the release film were laminated in this order in the thickness direction.
Further, the resin film is laminated by applying the resin film-forming composition to the release-treated surface of the release film and drying the composition as necessary.
Then, the release film is removed from the laminated sheet obtained above, and the exposed surface of the adhesive layer newly produced therefrom is bonded to the exposed surface of the resin film on the release film, whereby a composite sheet is obtained in which the base material, the cushion layer, the adhesive layer, the resin film, and the release film are laminated in this order in the thickness direction thereof. The release film on the resin film may be removed when the composite sheet is used.
A composite sheet including layers other than the above layers can be manufactured by: in the above-described manufacturing method, either one or both of the step of forming the other layer and the step of laminating the other layer may be added as appropriate so that the position of laminating the other layer is an appropriate position.
Manufacturing method of semiconductor chip with first protective film (method of using resin film and composite sheet)
As described above, when the resin film of the present embodiment is attached to the uneven surface of the object to which the resin film is to be attached, the resin film of the present embodiment has extremely excellent characteristics in that the convex portion penetrates through the resin film to expose the upper portion of the resin film and the resin film can cover the entire uneven surface. That is, the resin film of the present embodiment is suitable for being applied to an uneven surface of an object to be applied having the uneven surface. Further, in the case where the uneven surface has fine grooves, such grooves can be filled with the resin film, and as a result, the grooves can be filled with the protective film. Further, since the resin film is filled in the fine grooves on the uneven surface and the curing failure of the resin film subjected to the heat treatment for curing is suppressed, the adhesion of the processing chips, which may be generated when the protective film is cut, to the semiconductor chip or the wafer can be suppressed.
The resin film according to this embodiment is suitable for protecting the uneven surface and the side surface of the semiconductor chip, and is particularly suitable for manufacturing a semiconductor chip with a first protective film, which includes a semiconductor chip and a first protective film provided on the side surface and the surface having a bump (bump forming surface) of the semiconductor chip. In this case, the concave-convex surface is a bump forming surface of the semiconductor chip, and the convex portion is a bump. Further, the recess includes a groove on the bump forming face. Also, the semiconductor chip with the first protective film is adapted to be flip-chip connected to the substrate through the bumps therein, thereby being used for the manufacture of a semiconductor device.
The resin film of the present embodiment is suitably used in the form of the above-described composite sheet.
A method for manufacturing a semiconductor chip with a first protective film when using the composite sheet will be described below.
A method for manufacturing a semiconductor chip with a first protective film according to one embodiment of the present invention is a method for manufacturing a semiconductor chip with a first protective film using a semiconductor wafer, wherein the semiconductor chip with the first protective film includes a semiconductor chip and a first protective film provided on a side surface and a surface having a bump of the semiconductor chip, the semiconductor wafer has bumps and grooves as dividing positions of the semiconductor wafer on one surface thereof, and the manufacturing method includes a bonding step in which, by attaching the thermosetting resin film in the composite sheet of one embodiment of the present invention described above to the one face of the semiconductor wafer, thereby producing a semiconductor wafer with a resin film in which the resin film is provided on the one surface and the grooves are filled with the resin film, the production method further comprising: a curing step (1) of, after the attaching step, forming the first protective film by heat-curing the resin film, thereby producing a semiconductor wafer with the first protective film, which includes the semiconductor wafer and the first protective film provided on the one surface of the semiconductor wafer and filled in the trench; a dividing step (1) of dividing the semiconductor wafer after the curing step (1) to produce a semiconductor chip group with a first protective film, the semiconductor chip group including a plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (1) of cutting the first protective film along a gap between the semiconductor chips in the semiconductor chip group with the first protective film after the dividing step (1) to produce the semiconductor chip with the first protective film (in this specification, the production method at this time may be referred to as "production method (1)"); or has: a cutting step (2) of cutting the first protective film along the trench in the semiconductor wafer with the first protective film after the attaching step and after the curing step (1), thereby preparing a semiconductor wafer with the cut first protective film; and a dividing step (2) of dividing the semiconductor wafer after the cutting step (2) to produce the semiconductor chip with the first protective film (in this specification, the manufacturing method at this time may be referred to as "manufacturing method (2)"); or has: a dividing step (3) of dividing the semiconductor wafer after the attaching step to produce a semiconductor chip group with a resin film, the semiconductor chip group including a plurality of the semiconductor chips and the resin film provided in a gap between a surface of the plurality of the semiconductor chips having the bumps and the semiconductor chip; a curing step (3) of forming the first protective film by thermally curing the resin film after the dividing step (3), thereby producing a semiconductor chip group with the first protective film, which includes the plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (3) of cutting the first protective film along a gap between the semiconductor chips in the group of semiconductor chips with the first protective film after the curing step (3) to obtain the semiconductor chip with the first protective film (in this specification, the manufacturing method at this time may be referred to as "manufacturing method (3)").
These production methods will be explained below.
Method (1) for producing an infant food
Fig. 4A to 4E are sectional views schematically showing a manufacturing method (1), and the manufacturing method (1) is an example of a manufacturing method of a semiconductor chip with a first protective film when the composite sheet 1 shown in fig. 3 is used.
Here, since the resin film is used for forming the first protective film, the "composite sheet 1" is referred to as a "first protective film forming sheet 1", and the "base material 11" is referred to as a "first base material 11".
< attaching Process >
In the above-described attachment step of the manufacturing method (1), as shown in fig. 4A to 4B, the resin film 12 in the first protective film forming sheet 1 is attached to one surface (hereinafter, may be referred to as "bump forming surface") 9a of the semiconductor wafer 9.
The semiconductor wafer 9 has a plurality of bumps 91 and a plurality of grooves 90 as dividing positions of the semiconductor wafer 9 on the bump forming surface 9 a.
In this step, the first protective film forming sheet 1 is provided on the semiconductor wafer 9, thereby producing a semiconductor wafer 901 with a resin film in which the resin film 12 is provided on the bump forming surface 9a of the semiconductor wafer 9 and the grooves 90 are filled with the resin film 12.
Here, the top 9101 of the bump 91 is in a state of protruding from the resin film 12. The degree to which the top portions 9101 of the bumps 91 protrude from the resin film 12 may be adjusted according to the composition, thickness, or attachment condition of the resin film 12.
In the above-described attachment step of the manufacturing method (1), as shown in fig. 4A, for example, the first protective film forming sheet 1 is first arranged such that the resin film 12 faces the bump forming surface 9a of the semiconductor wafer 9.
The thickness of the semiconductor wafer 9 to be bonded with the resin film 12 is not particularly limited, but is preferably 100 to 1000 μm, more preferably 200 to 900 μm, and still more preferably 300 to 800 μm. When the thickness of the semiconductor wafer 9 is equal to or greater than the lower limit value, warpage due to shrinkage of the resin film 12 during curing is easily suppressed. By setting the thickness of the semiconductor wafer 9 to be equal to or less than the upper limit value, the time for dividing the semiconductor wafer 9, which will be described later, can be further shortened.
In the present specification, "the thickness of the semiconductor wafer" refers to the thickness of the semiconductor wafer in a region where there is no trench when the semiconductor wafer has the trench.
The height of the bump 91 is not particularly limited, but is preferably 120 to 300. mu.m, more preferably 150 to 270. mu.m, and particularly preferably 180 to 240 μm. By setting the height of the bump 91 to be equal to or higher than the lower limit value, the function of the bump 91 can be further improved. When the height of the bump 91 is not more than the upper limit value, the effect of suppressing the resin film 12 from remaining on the upper portion of the bump 91 is further enhanced.
In the present specification, the "height of the bump" refers to a height of a portion of the bump which is located at the highest position from the bump formation surface.
The width of the bump 91 is not particularly limited, but is preferably 170 to 350 μm, more preferably 200 to 320 μm, and particularly preferably 230 to 290 μm. By setting the width of the bump 91 to be equal to or greater than the lower limit value, the function of the bump 91 can be further improved. When the width of the bump 91 is equal to or less than the upper limit value, the effect of suppressing the resin film 12 from remaining on the upper portion of the bump 91 is further enhanced.
In the present specification, the "width of the bump" refers to the maximum value of the length of a line segment connecting two different points on the surface of the bump with a straight line when the bump is viewed from the direction perpendicular to the bump formation surface in a downward direction.
The distance between the adjacent bumps 91 is not particularly limited, but is preferably 250 to 800 μm, more preferably 300 to 600 μm, and particularly preferably 350 to 500 μm. By setting the distance to be equal to or greater than the lower limit value, the function of the bump 91 can be further improved. By setting the distance to the upper limit value or less, the effect of suppressing the resin film 12 from remaining on the upper portions of the bumps 91 becomes higher.
In the present specification, the "distance between adjacent bumps" refers to the minimum value of the distance between the surfaces of the adjacent bumps.
The depth of the trench 90 is not particularly limited as long as it is equal to or greater than the thickness of the final target chip and less than the thickness of the semiconductor wafer 9 before polishing, which will be described later, but is preferably 30 to 700 μm, more preferably 60 to 600 μm, and still more preferably 100 to 500 μm. By setting the depth of the groove 90 to be equal to or greater than the lower limit value, the semiconductor wafer 9 described later can be more easily divided. By setting the depth of the trench 90 to the upper limit value or less, the strength of the semiconductor wafer 9 becomes higher.
In this specification, when the depth of the groove is not a constant value, the maximum value of the depth of the groove is used as "the depth of the groove".
The width of the trench 90 is not particularly limited, but is preferably 10 to 2000 μm, more preferably 30 to 1000 μm, still more preferably 40 to 500 μm, and particularly preferably 50 to 300 μm. When the width of the groove 90 is equal to or greater than the lower limit value, the effect of preventing contact between adjacent semiconductor chips is increased when the semiconductor wafer 9 is divided as described later. By setting the width of the trench 90 to the upper limit or less, the strength of the semiconductor wafer 9 becomes higher.
In this specification, when the width of the groove is not a constant value, the maximum value of the width of the groove is used as "the width of the groove".
Next, in the above-described attachment step of the manufacturing method (1), the resin film 12 is brought into contact with the bumps 91 on the semiconductor wafer 9, and the first protective film forming sheet 1 is pressed against the semiconductor wafer 9. Thereby, the first surface 12a of the resin film 12 is sequentially brought into pressure contact with the surface 91a of the bump 91 and the bump forming surface 9a of the semiconductor wafer 9. At this time, the resin film 12 is softened by heating the resin film 12, and the resin film 12 spreads between the bumps 91 so as to cover the bumps 91, adheres to the bump forming surface 9a, and covers the surface 91a of the bump 91, particularly the surface 91a in the vicinity of the bump forming surface 9a, to fill the base of the bump 91. Therefore, the resin film 12 is sufficiently adhered to the bump forming surface 9a and the base of the bump 91, and the resin film 12 fills the groove 90 on the semiconductor wafer 9.
In this way, as shown in fig. 4B, a semiconductor wafer 901 with a resin film is obtained.
As described above, as a method of pressure-bonding the first protective film forming sheet 1 to the semiconductor wafer 9, a known method of pressure-bonding various sheets to an object can be applied, and for example, a method using a laminating roller or the like can be cited.
The heating temperature of the first protective film forming sheet 1 (resin film 12) when pressure bonded to the semiconductor wafer 9 may be 80 to 100 ℃, for example, as long as the resin film 12 is not cured at all or is not excessively cured.
The heating temperature is preferably 85 to 95 ℃ from the viewpoint that the resin film 12 sufficiently adheres to the bump forming surface 9a and the base of the bump 91 and the resin film 12 sufficiently fills the groove 90 more effectively.
The pressure at which the first protective film forming sheet 1 (resin film 12) is pressed against the semiconductor wafer 9 is not particularly limited, and may be, for example, 0.1 to 1.5 MPa.
The pressure is preferably 0.3 to 1MPa from the viewpoint that the resin film 12 sufficiently adheres to the bump forming surface 9a and the base of the bump 91, and the resin film 12 sufficiently fills the groove 90 more effectively.
As described above, when the first protective film forming sheet 1 is pressure-bonded to the semiconductor wafer 9, the resin film 12, the adhesive layer 14, and the buffer layer 13 in the first protective film forming sheet 1 receive the pressure from the bumps 91, and the first surface 12a of the resin film 12, the first surface 14a of the adhesive layer 14, and the first surface 13a of the buffer layer 13 are deformed into the concave shape in the initial stage. Then, the resin film 12 that is subjected to the pressure from the bump 91 in this state may be broken. Such breakage of the resin film 12 occurs if the X value is 19 or more and less than 10000 (19. ltoreq. X value < 10000). At this time, finally, at the stage where the first surface 12a of the resin film 12 is pressed against the bump forming surface 9a of the semiconductor wafer 9, the upper portions 910 of the bumps 91 including the top portions 9101 penetrate the resin film 12 and protrude. In addition, in this final stage, the upper portion 910 of the bump 91 does not generally penetrate the buffer layer 13. This is because the buffer layer 13 has a buffering effect on the pressure applied by the bump 91.
Fig. 4B shows that, at the stage of completion of the attaching process, the resin film 12 is not left at all or hardly left on the upper portions 910 of the bumps 91 including the top portions 9101, and the resin film 12 is inhibited from remaining on the upper portions 910 of the bumps 91.
In this specification, unless otherwise specified, "the resin film hardly remains on the top of the bump" means that a small amount of the resin film remains on the top of the bump, but the remaining amount is such an amount that does not interfere with electrical connection between the semiconductor chip and the substrate when the semiconductor chip provided with the bump is flip-chip connected to the substrate.
When the value X is 19 or more and less than 10000, the resin film 12 can be prevented from coming out of the original size at the stage of completion of the bonding step, and therefore the resin film 12 can be prevented from coming out of the bump formation surface 9a of the semiconductor wafer 9.
When the value X is 19 or more and less than 10000, further, unevenness of the resin film 12 on the bump forming surface 9a can be suppressed at the stage of completion of the above-mentioned attaching step. More specifically, it is possible to suppress a phenomenon in which, in a state in which the resin film 12 is provided on the bump forming surface 9a, a region other than the upper portion 910 of the bump 91 (for example, a base portion near the bump forming surface 9 a) or a region near the bump 91 of the bump forming surface 9a is exposed unintentionally without being covered with the resin film 12.
< curing step (1) >
In the curing step (1) after the attachment step of the manufacturing method (1), the first support sheet 10 is removed from the semiconductor wafer 901 with the resin film, and then, as shown in fig. 4C, the resin film 12 is cured to form the first protection film 12 ', thereby manufacturing the semiconductor wafer 902 with the first protection film, which includes the semiconductor wafer 9 and the first protection film 12' provided on the bump forming surface 9a of the semiconductor wafer 9 and filled in the trench 90.
In the curing step (1), the resin film 12 is cured by heating. The heating conditions at this time were as described above.
The first test piece produced using the resin film 12 has a heat release value of 100J/g or less, and curing failure of the resin film 12 is suppressed.
Reference numeral 9b denotes a surface (back surface) of the semiconductor wafer 9 opposite to the bump forming surface 9 a.
In the semiconductor wafer with resin film 901, since the resin film 12 is sufficiently filled in the trench 90 on the semiconductor wafer 9, the semiconductor wafer 902 with the first protective film in which the first protective film 12' is sufficiently filled in the trench 90 can be obtained by the curing step (1).
< dividing step (1) >)
In the dividing step (1) after the curing step (1), by dividing the semiconductor wafer 9, as shown in fig. 4D, a semiconductor chip group 903 with a first protective film is produced which includes a plurality of semiconductor chips 9 ' and a first protective film 12 ', and the first protective film 12 ' is provided in a gap 90 ' between a surface having a bump (hereinafter, sometimes referred to as a "bump forming surface") 9a ' of the plurality of semiconductor chips 9 ' and the semiconductor chip 9 '.
The gap 90 'between the semiconductor chips 9' refers to a region sandwiched by the side surfaces 9c 'of the adjacent semiconductor chips 9'.
The semiconductor wafer 9 can be divided by a known method, and in the present embodiment, the back surface 9b of the semiconductor wafer 9 can be polished by using a polishing apparatus such as a grinder. At this time, the semiconductor wafer 9 is polished in a direction from the back surface 9b of the semiconductor wafer 9 toward the bump forming surface 9a until the polished surface (back surface 9b) reaches the groove 90 (in other words, until the groove 90 appears, and further in other words, until the gap 90' is formed). Thereby, the thickness of the semiconductor wafer 9 becomes thin and the grooves 90 become dividing positions, the semiconductor wafer 9 is divided, and the gaps 90' are formed by the grooves 90. The polishing of the back surface 9b of the semiconductor wafer 9 is performed until the thickness of the semiconductor chip 9 ' reaches a target value, and for example, the polishing may be stopped when the polished surface reaches the groove 90, or the first protection film 12 ' and the back surface 9b existing inside the gap 90 ' may be simultaneously polished after the polished surface reaches the groove 90.
In the dividing step (1), the back surface 9b of the semiconductor wafer 9 may be polished by attaching a back grinding tape to the surface of the first protective film-attached semiconductor wafer 902 on the bump forming surface 9a side, as necessary.
For convenience, in this specification, the back surface of the semiconductor wafer 9 under polishing is also denoted by reference numeral 9 b.
Reference numeral 9b ' denotes a surface (back surface) of the semiconductor chip 9 ' opposite to the bump forming surface 9a '.
In the semiconductor chip group 903 with the first protection film, all the semiconductor chips 9 'are held integrally by one piece of the first protection film 12'. When the back grinding tape is used as described above, all the semiconductor chips 9 ' are held integrally by one piece of the first protection film 12 ' and the back grinding tape attached to the surface on the bump forming surface 9a ' side of the semiconductor chip group 903 with the first protection film.
< cutting step (1) >
In the cutting step (1) after the dividing step (1), the first protective film 12 ' is cut along the gaps 90 ' between the semiconductor chips 9 ' in the semiconductor chip group 903 with the first protective film, whereby the semiconductor chip 900 with the first protective film is manufactured as shown in fig. 4E.
In the resin film 12, since the heat release amount of the first test piece produced using the resin film is 100J/g or less, curing failure is suppressed, and thus processing chips that may be generated during cutting are less likely to adhere to the semiconductor chip 9'.
The semiconductor chip 900 with the first protection film includes a semiconductor chip 9 ' and the first protection film 120 ' provided on the side surface 9c ' and the bump formation surface 9a ' of the semiconductor chip 9 '. The side surface 9c ' and the bump forming surface 9a ' of the semiconductor chip 9 ' are protected by the first protection film 120 ' after cutting, and the protection effect of the semiconductor chip 9 ' is very high.
When the planar shape of the semiconductor chip 9 'is a square when the semiconductor chip 9' is viewed downward from above the bump forming surface 9a 'side of the semiconductor chip 9', one semiconductor chip 9 'has four side surfaces 9 c'. Therefore, in the semiconductor chip with the first protection film 900, the first protection film 120 'after the cutting is provided integrally with one bump forming surface 9 a' on all (i.e., four) side surfaces 9c 'of the semiconductor chip 9'. In this specification, the "first protection film after cutting" may be simply referred to as "first protection film".
In the cutting step (1), the first protection film 12 ' is cut along the outer periphery (in other words, the side surface 9c ') of the semiconductor chip 9 '. At this time, the first protection film 12 ' filled in the gap 90 ' between the adjacent semiconductor chips 9 ' is preferably cut along the outer periphery (in other words, the side surface 9c ') of the semiconductor chip 9 ' to be divided into two. Thus, the first protection film 120 ' after being cut in a more uniform shape can be provided on each side surface 9c ' of the semiconductor chip 9 '.
The first protective film 12' can be cut by a known method such as blade cutting or laser cutting.
The first protection film 12 ' can be cut in a state where, for example, a known dicing sheet is attached to the back surface 9b ' of the semiconductor chip 9 ' in the semiconductor chip group 903 with the first protection film, and a back grinding tape is removed. When the back grinding tape includes an energy ray-curable adhesive agent layer, the back grinding tape can be removed from the semiconductor chip group 903 with the first protective film more easily by irradiating the back grinding tape with an energy ray to cure the adhesive agent layer.
In the semiconductor chip with the first protection film 900, the first protection film 120 ' is sufficiently adhered to the bump forming surface 9a ' of the semiconductor chip 9 ', the base portion and the side surface 9c ' of the bump 91, and peeling of the first protection film 120 ' from these portions is suppressed. The first protective film 120 ' having a sufficient thickness is provided on the side surface 9c ' of the semiconductor chip 9 '.
Further, when the X value is 19 or more and less than 10000, further, in the semiconductor chip 900 with the first protection film, the top portion 9101 of the bump 91 protrudes from the first protection film 120 ', the first protection film 120 ' is completely or hardly adhered to the upper portion 910 of the bump 91 including the top portion 9101, and the adhesion of the first protection film 120 ' to the upper portion 910 of the bump 91 is suppressed.
Further, in the semiconductor chip 900 with the first protection film, the protrusion of the first protection film 120 ' on the bump forming surface 9a ' of the semiconductor chip 9 ' is suppressed.
Further, the unevenness of the first protection film 120 ' on the bump forming surface 9a ' of the semiconductor chip 9 ' is suppressed. More specifically, in a state where the first protection film 120 ' is provided on the bump forming surface 9a ', a phenomenon in which a region other than the upper portion 910 of the bump 91 (for example, a base portion in the vicinity of the bump forming surface 9a ') or a region in the vicinity of the bump 91 of the bump forming surface 9a ' is exposed unintentionally without being covered with the first protection film 120 ' is suppressed.
Method (2) for producing
Fig. 5A to 5E are sectional views schematically showing a manufacturing method (2), and the manufacturing method (2) is another example of the manufacturing method of the semiconductor chip with the first protective film when the composite sheet 1 shown in fig. 3 is used.
< attaching step and curing step (1) >
As shown in fig. 5A to 5C, in the manufacturing method (2), the attaching step and the curing step (1) are performed by the same method as the manufacturing method (1), and the semiconductor wafer 902 with the first protective film is manufactured.
< cutting step (2) >
In the cutting step (2) after the curing step (1) of the manufacturing method (2), the first protective film 12' is cut along the trench 90 in the semiconductor wafer with first protective film 902, thereby manufacturing a semiconductor wafer with cut first protective film 904 as shown in fig. 5D.
In this process, the first protection film 12' filled in the trench 90 is preferably cut along the side 90c of the trench 90. As a result, the first protection film after being cut in a more uniform shape can be provided on each side surface of the semiconductor chip.
In the cutting step (2), the first protection film 12 'is cut from the surface 12 b' of the first protection film 12 'opposite to the semiconductor wafer 9 toward the surface 12 a' of the semiconductor wafer 9. In this case, the notch of the first protection film 12 ' may not reach the front end portion of the first protection film 12 ' in the depth direction of the trench 90, but from the viewpoint of facilitating the division of the semiconductor wafer 9 described later, the reaching position of the notch is better as the position is closer to the front end portion, and the notch reaches the front end portion, that is, the first protection film 12 ' is cut. Fig. 5D shows a case where the first protection film 12 ' (the first protection film 120 ' after the cutting is made) is cut by making the cut of the first protection film 12 ' reach the leading end portion.
On the other hand, when the semiconductor wafer 9 is divided into semiconductor chips by polishing the rear surface 9b of the semiconductor wafer 9, which will be described later, it is preferable that the reaching position of the notch of the first protection film 12 'is coincident with or near the position where the rear surface of the semiconductor chip is estimated to be finally formed, from the viewpoints of suppressing cracking or chipping of the corner portion of the semiconductor chip and suppressing breaking or chipping of the first protection film 12' existing in the vicinity of the corner portion of the semiconductor chip.
As in the cutting step (1), the first protective film 12' may be cut by a known method such as blade cutting or laser cutting.
< dividing step (2) >)
In the dividing step (2) after the cutting step (2), the semiconductor wafer 9 is divided, thereby producing the semiconductor chip 900 with the first protective film as shown in fig. 5E.
The semiconductor chip 900 with the first protective film obtained in the dividing step (2) is the same as the semiconductor chip 900 with the first protective film obtained in the cutting step (1).
The semiconductor wafer 9 can be divided by a known method in the same manner as in the dividing step (1).
For example, when the back surface 9b of the semiconductor wafer 9 is polished by a polishing apparatus such as a grinder, the back surface 9b is polished in a direction from the back surface 9b toward the bump forming surface 9a until the polished surface (back surface 9b) reaches the groove 90. In the cutting step (2), when the cut of the first protection film 12 'does not reach the front end portion of the first protection film 12' in the depth direction of the trench 90, the back surface 9b and the first protection film 12 'are simultaneously polished until the polished surfaces reach the cut of the first protection film 12'.
In the semiconductor chip 900 with the first protection film obtained in the dividing step (2), the peeling of the first protection film 120 'from the bump forming surface 9 a' of the semiconductor chip 9 'and from the base and side surfaces 9 c' of the bump 91 is suppressed, similarly to the manufacturing method (1). The first protective film 120 ' having a sufficient thickness is provided on the side surface 9c ' of the semiconductor chip 9 '.
When the value X is 19 or more and less than 10000, the semiconductor chip 900 with the first protection film obtained in the dividing step (2) can obtain an effect of suppressing the adhesion of the first protection film 120 ' to the upper portion 910 of the bump 91, an effect of suppressing the bleeding of the first protection film 120 ' on the bump forming surface 9a ', and an effect of suppressing the unevenness of the first protection film 120 ' on the bump forming surface 9a ', similarly to the manufacturing method (1).
Method (3) for producing
Fig. 6A to 6E are sectional views schematically showing a manufacturing method (3), and the manufacturing method (3) is still another example of the manufacturing method of the semiconductor chip with the first protective film when the composite sheet 1 shown in fig. 3 is used.
< attaching Process >
As shown in fig. 6A to 6B, in the manufacturing method (3), the bonding step is performed by the same method as the manufacturing method (1), and the semiconductor wafer 901 with the resin film is manufactured.
< dividing step (3) >)
In the dividing step (3) after the attaching step of the manufacturing method (3), the semiconductor wafer 9 is divided, thereby producing a semiconductor chip group 905 with a resin film including a plurality of semiconductor chips 9 ' and a resin film 12, as shown in fig. 6C, the resin film 12 being provided in the gap 90 ' between the bump forming surface 9a ' of the plurality of semiconductor chips 9 ' and the semiconductor chip 9 '.
The semiconductor wafer 9 can be divided by a known method in the same manner as in the dividing step (1).
In the resin film-attached semiconductor chip group 905, all the semiconductor chips 9' are held integrally with the support sheet 10 by one resin film 12.
< curing step (3) >
In the curing step (3) after the dividing step (3), the first support sheet 10 is removed from the semiconductor chip group 905, and then the resin film 12 is cured to form the first protective film, thereby producing a semiconductor chip group 903 with the first protective film including a plurality of semiconductor chips 9 ' and the first protective film 12 ', as shown in fig. 6D, wherein the first protective film 12 ' is provided in the gap 90 ' between the bump forming surface 9a ' of the plurality of semiconductor chips 9 ' and the semiconductor chip 9 '.
The semiconductor chip group 903 with the first protective film obtained in the curing step (3) is the same as the semiconductor chip group 903 with the first protective film obtained in the dividing step (1).
As in the curing step (1), the resin film 12 can be cured by a known method.
< cutting step (3) >
In the cutting step (3) after the curing step (3), the first protective film 12 ' is cut along the gaps 90 ' between the semiconductor chips 9 ' in the first protective film-attached semiconductor chip group 903, thereby producing the first protective film-attached semiconductor chip 900.
The semiconductor chip 900 with the first protective film obtained in the cutting step (3) is the same as the semiconductor chip 900 with the first protective film obtained in the cutting step (1).
The first protective film 12' can be cut by a known method in the same manner as in the cutting step (1).
In the semiconductor chip 900 with the first protection film obtained in the cutting step (3), the peeling of the first protection film 120 'from the bump forming surface 9 a' of the semiconductor chip 9 'and from the base and side surfaces 9 c' of the bump 91 is suppressed, similarly to the manufacturing method (1). The first protective film 120 ' having a sufficient thickness is provided on the side surface 9c ' of the semiconductor chip 9 '.
When the value X is 19 or more and less than 10000, the semiconductor chip 900 with the first protection film obtained in the cutting step (3) can obtain the effect of suppressing the adhesion of the first protection film 120 ' to the upper portion 910 of the bump 91, the effect of suppressing the bleeding of the first protection film 120 ' on the bump forming surface 9a ', and the effect of suppressing the unevenness of the first protection film 120 ' on the bump forming surface 9a ', similarly to the manufacturing method (1).
Although the case of using the composite sheet (first protective film forming sheet) 1 shown in fig. 3 has been described, the composite sheet of the other embodiment described above also exhibits the same effects as those of the composite sheet 1.
The above-described production methods (1) to (3) may have other steps than those described above within a range not departing from the gist of the present invention.
For example, when the second protective film is provided on the back surface of the semiconductor chip, the manufacturing methods (1) to (3) may include: a step of attaching the second protective film forming film of the second protective film forming sheet to the back surface of the semiconductor chip; curing the second protective film-forming film to form a second protective film when the second protective film-forming film is curable; and cutting the second protective film-forming film or the second protective film along the outer periphery (side surface) of the semiconductor chip.
For example, when the resin film 12, the first protection film 12 ', or the first protection film 120' after the cutting remains on the upper portion 910 of the bump 91 including the top portion 9101 at any stage after the attachment step, the manufacturing methods (1) to (3) may include a removing step of removing the residue of the resin film 12, the first protection film 12 ', or the first protection film 120' after the cutting from the upper portion 910 of the bump 91 at any timing after the attachment step.
The residues of the resin film 12, the first protection film 12 ', or the first protection film 120' after the cutting on the upper portion 910 of the bump 91 can be removed by a known method such as plasma irradiation.
In the present embodiment, a supporting sheet or a back-grinding tape is provided on the bump forming surface of the semiconductor wafer or the bump forming surface of the semiconductor chip group via the resin film or the first protective film, and the back surface of the semiconductor wafer or the back surface of the semiconductor chip group is ground, for example. Here, the resin sheet may be formed by filling a resin film or a first protective film on a bump forming surface of the semiconductor wafer or a bump forming surface of the semiconductor chip group with a resin having fluidity, and further filling a surface of the bump and then curing the resin film or the first protective film. In the case of providing such a resin sheet, before the resin having fluidity is used, a resin film covering the resin film on the bump forming surface or the first protective film and the surface of the bump may be formed in advance by using another resin having flexibility that can follow the resin film on the bump forming surface or the surfaces of the first protective film and the bump, and the resin sheet may be provided through the resin film. By providing the resin film in this manner, the unnecessary resin sheet can be easily removed after polishing or the like of the back surface of the semiconductor wafer or the back surface of the semiconductor chip group.
Method of using semiconductor chip with first protective film
By using the semiconductor chip with the first protective film, a semiconductor device can be manufactured. For example, the semiconductor chip with the first protective film is flip-chip connected (mounted) to the circuit formation surface of the circuit substrate via the top of the bumps therein.
When the second protective film forming sheet is used, the semiconductor chip with the first protective film provided with the second protective film is separated from the dicing sheet in the second protective film forming sheet and picked up before the flip-chip connection of the semiconductor chip with the first protective film is performed.
The semiconductor chip with the first protective film provided with the second protective film can be picked up by a known method.
Then, using the circuit board on which the semiconductor chip is mounted obtained in this manner, a semiconductor package can be manufactured by a known method, and a target semiconductor device can be manufactured using the semiconductor package.
Examples
The present invention will be described in more detail below with reference to specific examples. However, the present invention is not limited to the examples shown below.
< raw Material for producing composition for Forming resin film >
The raw materials used for preparing the composition for forming a resin film are shown below.
[ Polymer component (A) ]
(A) -1: polyvinyl butyral having a structural unit represented by the following formulae (i) -1, (i) -2 and (i) -3) (SEKISUI CHEMICAL CO., S-LEC BL-10 manufactured by LTD., weight average molecular weight 25000, glass transition temperature 59 ℃ C.).
[ chemical formula 2]
Figure BDA0003603864300000571
In the formula I1About 28, m1Is 1 to 3, n1Is an integer of 68-74.
[ epoxy resin (B1) ]
(B1) -1: liquid-modified bisphenol A epoxy resin ("EPICLON EXA-4850-150", molecular weight 900, epoxy equivalent 450g/eq ", manufactured by DIC CORPORATION)
(B1) -2: dicyclopentadiene type epoxy resin ("EPICLON HP-7200 HH" manufactured by DIC CORPORATION, epoxy equivalent 254 to 264g/eq)
(B1) -3: bisphenol A epoxy resin ("jER 828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184-194 g/eq)
[ Heat-curing agent (B2) ]
(B2) An o-cresol novolak resin ("Phenolite KA-1160" manufactured by DIC CORPORATION, softening point 80 ℃ C., hydroxyl equivalent 117g/eq)
(B2) -2: biphenylalkyl phenol resin ("MEHC-7851-H" manufactured by MEIWA PLASTIC INDUSTRIES, LTD., solid dispersion latent curing agent, hydroxyl group equivalent 218g/eq)
[ curing Accelerator (C) ]
(C) -1: 2-phenyl-4, 5-dimethylol imidazole ("CURZOL 2 PHZ-PW" manufactured by SHIKOKU CHEMICALS CORPORATION)
[ Filler (D) ]
(D) -1: epoxy-modified spherical silica ("ADMANANO YA 050C-MKK" manufactured by Admatechs Co., Ltd., average particle diameter 50nm)
(D) -2: epoxy-modified spherical silica ("5 SE-CH 1" manufactured by Admatechs corporation, average particle diameter 500nm)
[ coupling agent (E) ]
(E) -1: 3-glycidyloxypropyltrimethoxysilane ("KBM-403" manufactured by Shin-Etsu Silicone Co., Ltd.)
[ additive (I) ]
(I) -1: surfactant (acrylic acid Polymer, "BYK-361N" manufactured by Bick chemical Co., Ltd.)
(I) -2: silicone oil (aralkyl-modified Silicone oil, "XF 42-334" manufactured by Momentive Performance Materials Japan)
(I) -3: rheology control agent (polyhydroxycarboxylate, "BYK-R606" manufactured by Bick chemical Co.)
[ example 1]
Production of first protective film Forming sheet
< preparation of composition for Forming thermosetting resin film >
Polymer component (a) -1(100 parts by mass), epoxy resin (B1) -1(290 parts by mass), epoxy resin (B1) -2(220 parts by mass), (B2) -1(160 parts by mass), curing accelerator (C) -1(2 parts by mass), filler (D) -1(200 parts by mass), additive (I) -1(25 parts by mass), and additive (I) -2(3 parts by mass) were dissolved or dispersed in methyl ethyl ketone, and stirred at 23 ℃. The amounts of the components other than the solvent to be blended are the amounts of the target product not containing the solvent.
< production of thermosetting resin film >
Using a release film (SP-PET 381031 manufactured by LINTEC Corporation, "thickness 38 μm) obtained by subjecting one surface of a polyethylene terephthalate film to a release treatment by a silicone treatment, the above-obtained composition (III) was coated on the release-treated surface of the release film, and heated and dried at 120 ℃ for 2 minutes, thereby forming a thermosetting resin film having a thickness of 45 μm.
< production of first protective film-forming sheet >
A laminated sheet (back-grinding tape, "E-8510 HR" manufactured by linec Corporation, also corresponding to the support sheet) corresponding to a laminated body of the first base material, the buffer layer, and the first adhesive layer was used, and the first adhesive layer in the laminated sheet was laminated with the thermosetting resin film on the release film obtained above. Thus, a first protective film-forming sheet having a structure shown in fig. 3 was obtained, in which the first base material, the buffer layer, the first adhesive layer, the thermosetting resin film, and the release film were sequentially stacked in the thickness direction thereof.
Evaluation of thermosetting resin film
< Differential Scanning Calorimetry (DSC) >)
[ production of thermosetting resin film and first test piece ]
A thermosetting resin film having a thickness of 45 μm was produced in the same manner as described above, except that the amount of the composition (III) to be applied was changed. The obtained thermosetting resin film was laminated to a thickness of 225 μm, and 5mg of the thermosetting resin film was obtained. This was used as a first test piece of the resin film before heat curing. 5mg of the first test piece was packed in an aluminum pan, heated from room temperature to 300 ℃ at a temperature rising rate of 10 ℃/min under a nitrogen atmosphere using a DSC apparatus ("Q-2000" manufactured by TA instruments), and scanned over a range of 50 to 300 ℃. Integrating exothermic peaks in the range of 100-300 ℃ according to the scanning chart, and calculating the heat generated along with the reaction.
< evaluation of suitability for filling grooves in wafer surface with thermosetting resin film >
[ production of silicon wafer with first protective film ]
A plurality of grooves having a width of 60 μm and a depth of 230 μm were formed in a lattice shape on the surface of a silicon wafer (12 inches in diameter and 750 μm in thickness) so as to obtain chips having a size of 6mm × 6mm using a half-cut dicing saw ("DFD 6361" manufactured by DISCO CORPORATION).
The first protective film-forming sheet obtained above was attached to the surface of the silicon wafer on which the grooves were formed, with a thermosetting resin film therein, using an attaching apparatus (roll laminator, "RAD-3510F/12" manufactured by LINTEC Corporation) under conditions of a table temperature of 90 ℃, an attaching speed of 2mm/s, an attaching pressure of 0.5MPa, and a roll attaching height of-200 μm.
Next, the laminated sheet (support sheet) is peeled from the first protective film-forming sheet, thereby producing a silicon wafer with a thermosetting resin film.
Next, the thermosetting resin film after being attached to the surface of the silicon wafer on which the grooves were formed was subjected to heat treatment using a pressurized oven ("RAD-9100" manufactured by linetec Corporation) under heating conditions of a temperature of 130 ℃, a time of 4 hours, and an in-furnace pressure of 0.5MPa, and was heat-cured to form the first protective film.
In this way, a silicon wafer with the first protective film is manufactured.
[ evaluation of suitability for filling grooves in the surface of a wafer with a thermosetting resin film ]
The silicon wafer with the first protective film obtained above was observed with an optical microscope. Then, suitability of the first protective film (i.e., cured product of thermosetting resin film) for filling the trench on the wafer surface was evaluated according to the following criteria. The results are shown in table 1 in the column "trench filling suitability".
(evaluation criteria)
A: no deformation of the shape of the first protective film is observed, and the filling suitability of the trench is high.
B: the shape of the first protective film is slightly deformed in a portion corresponding to the vicinity of the opening of the trench, but the filling suitability of the trench is good.
C: not in any of the above A, B, the filling suitability of the trench is poor.
< evaluation of processing chips >
[ production of silicon chip with first protective film ]
Next, using a laminated sheet (back-grinding tape, "E-8510 HR" manufactured by linec Corporation) corresponding to a laminated body of the first substrate, the buffer layer, and the first adhesive layer, the first adhesive layer in the laminated sheet and the surface of the first protective film of the silicon wafer with the first protective film subjected to the evaluation of filling suitability were bonded.
And grinding the back surface of the silicon wafer with the first protective film until the grinding surface reaches the groove, thereby dividing the silicon wafer into silicon chips, and grinding until the thickness of the silicon chip reaches 200 μm.
Next, a dicing tape ("D-686H" manufactured by LINTEC Corporation) was attached to the back surfaces (ground surfaces) of all the silicon chips obtained above using an attaching device ("RAD-3510F/12" manufactured by LINTEC Corporation) using a roll coater. Then, the first protective film was cut along the outer periphery of the obtained silicon chip by blade dicing using a blade cutter ("DFD 6362" manufactured by DISCO CORPORATION). At this time, the moving speed of the blade was set to 10mm/s, the rotational speed of the blade was set to 50000rpm, and the base material of the dicing tape was cut with the blade to a depth of 20 μm from the surface on the silicon chip side.
In this way, a plurality of silicon chips with first protective films, each of which is fixed to a dicing tape and includes a silicon chip having a size of 6mm × 6mm and the first protective films integrally provided on four side surfaces and one surface (surface of a silicon wafer on which grooves have been formed) of the silicon chip, are obtained.
[ evaluation ]
After the cutting with the blade, the intersection of the cutting lines was observed with an optical microscope. In order to prevent the observation position from being biased, the intersection portion was selected and observed at 5 positions in total: the position of the central portion of the silicon wafer and four positions of the vicinity of the peripheral portion of the silicon wafer, which are located at positions that are substantially equidistant from the central portion and that are once located at equal distances from each other. Then, a plurality of silicon chips in which adhesion of processing chips to the chips was observed at even one of the five positions were regarded as defective products. The results of "number of defective products/evaluation number (═ 5)" at this time are shown in the column of "evaluation of machining chips" in table 1.
< measurement of Gc1 and Gc300 of thermosetting resin film and calculation of X value >
[ production of thermosetting resin film and second test piece ]
20 sheets of a thermosetting resin film having a thickness of 50 μm were produced by the same method as described above, except that the amount of the composition (III) to be applied was changed. Next, these thermosetting resin films were laminated, and the obtained laminated film was cut into a disc shape having a diameter of 25mm, thereby producing a second test piece of a thermosetting resin film having a thickness of 1 mm.
[ measurement of Gc1 and Gc300 of thermosetting resin film and calculation of X value ]
The set position of the test piece in the viscoelasticity measuring apparatus ("MCR 301" manufactured by antopa corporation) was kept warm at 90 ℃ in advance, the second test piece of the thermosetting resin film obtained above was placed on the set position, and the measuring jig was pressed against the upper surface of the second test piece, thereby fixing the second test piece to the set position.
Then, the strain generated in the second test piece was increased in stages in the range of 0.01% to 1000% at a temperature of 90 ℃ and a measurement frequency of 1Hz, and the storage modulus Gc of the second test piece was measured. Then, the X value is calculated from the measurement values of Gc1 and Gc 300. The results are shown in Table 1.
< measurement of amount of bleeding of thermosetting resin film >
[ production of thermosetting resin film and third test piece ]
Using a release film (SP-PET 381031 manufactured by LINTEC Corporation, "thickness 38 μm) obtained by subjecting one surface of a polyethylene terephthalate film to a release treatment by a silicone treatment, the above-obtained composition (III) was coated on the release-treated surface of the release film, and heated and dried at 120 ℃ for 2 minutes, thereby forming a thermosetting resin film having a thickness of 30 μm.
Then, the thermosetting resin film was processed into a circular shape having a diameter of 170mm together with the release film, thereby producing a third test piece with a release film.
[ measurement of the amount of bleeding of thermosetting resin film ]
The entire exposed surface of the obtained third test piece (in other words, the surface opposite to the side having the release film) was bonded to the surface of a transparent belt-shaped back-grinding tape ("E-8180" manufactured by LINTEC Corporation), thereby obtaining a laminate shown in fig. 7. Fig. 7 is a plan view schematically showing a state in which the laminate is viewed from above from the back-grinding-tape side in the resulting laminate in a plan view.
As shown here, the obtained laminate 101 was constructed by sequentially laminating the back grinding tape 7, the third test piece 120 (thermosetting resin film 12), and the release film in the thickness direction thereof.
Next, the release film was removed from the obtained laminate, and the exposed surface of the newly produced third test piece (in other words, the surface of the third test piece opposite to the side provided with the back grinding tape) was pressure-bonded to one surface of a silicon wafer having a diameter of 12 inches, thereby attaching the third test piece to the surface of the silicon wafer. At this time, the third test piece was attached by heating the third test piece while using an attaching device ("RAD-3510F/12" manufactured by LINTEC Corporation) under conditions of a table temperature of 90 ℃, an attaching speed of 2mm/s, an attaching pressure of 0.5MPa, and a roller attaching height of-200 μm.
Next, the maximum value of the length of a line segment connecting two different points on the outer periphery of the third test piece with the back-grinding tape attached to the silicon wafer was measured, and the amount of protrusion (mm) of the third test piece (in other words, the thermosetting resin film) was calculated by the method described with reference to fig. 2 using the measurement value (the maximum value of the length of the line segment). The results are shown in Table 1.
Example 2 and reference example 1
Production of thermosetting resin film and first protective film-forming sheet, and evaluation of thermosetting resin film
Except that either or both of the kind and the blending amount of the blending components in the preparation of the thermosetting resin film-forming composition were changed in such a manner that the kind and the content of the components contained in the thermosetting resin film-forming composition were as shown in table 1, the thermosetting resin film and the first protective film-forming sheet were produced by the same method as in example 1, and the thermosetting resin film was evaluated. The results are shown in Table 1.
In addition, "-" in the column of containing a component in table 1 means that the thermosetting resin film-forming composition does not contain the component.
[ Table 1]
Figure BDA0003603864300000641
From the above results, in examples 1 to 2, adhesion of the processing chips to the chips was not observed. Examples 1 to 2 satisfy the specification that the heat amount measured by Differential Scanning Calorimetry (DSC) is 100J/g or less. Similarly, in examples 1 to 2, the content of the thermosetting component (B) was in the range of 10 to 75 mass% with respect to the total mass of the resin film.
In example 1 in which the content ratio of the thermosetting component (B) and the content ratio of the filler (D) were high and the value of X was also high, the thermosetting resin film had particularly good suitability for filling the grooves on the surface of the silicon wafer.
In example 1 (example 2 was not evaluated), the amount of protrusion of the third test piece was 0mm (no protrusion of the thermosetting resin film was observed), and the basic properties of the thermosetting resin film were good.
In examples 1 to 2, the X value was 27 to 65, and it was found that: when the thermosetting resin films of examples 1 to 2 were applied to a surface having irregularities (for example, a bump-forming surface of a semiconductor wafer), penetration of the projections (for example, bumps) could be achieved, leaving on the upper portions of the projections could be suppressed, protrusion on the surface having irregularities could be suppressed, and unevenness of the thermosetting resin film itself and its cured product on the surface having irregularities could be suppressed.
Industrial applicability
The present invention can be used for manufacturing a semiconductor chip or the like having bumps in connection pad portions, which is used in a flip-chip connection method.
Description of the reference numerals
1: a composite sheet (first protective film forming sheet); 10: a support sheet (first support sheet); 10 a: one face of the support sheet; 11: a substrate (first substrate); 11 a: one side of the substrate; 12: a resin film; 12 a: a first surface of the resin film; 12': a first protective film; 120': a first protection film (first protection film after cutting); 13: a buffer layer; 9: a semiconductor wafer; 90: a trench of a semiconductor wafer; 9 a: a bump forming surface of a semiconductor wafer; 9': a semiconductor chip; 9 a': a bump forming surface of the semiconductor chip; 9 c': a side surface of the semiconductor chip; 91: salient points; 900: a semiconductor chip with a first protective film; 901: a semiconductor wafer with a resin film; 902: a semiconductor wafer with a first protective film; 903: a semiconductor chip group with a first protection film; 904: a semiconductor wafer with the first protective film cut; 905: a semiconductor chip set with a resin film.

Claims (9)

1. A resin film which is a thermosetting resin film,
the resin film before heat curing is used as a first test piece, and the heat release amount of the resin film in the range of 100-300 ℃ obtained by analyzing the first test piece under the constant temperature rising condition with the temperature rising rate of 10 ℃/min by Differential Scanning Calorimetry (DSC) is less than or equal to 100J/g.
2. The resin film according to claim 1,
the resin film contains a thermosetting component (B),
the content of the thermosetting component (B) is 10-75% by mass relative to the total mass of the resin film.
3. The resin film according to claim 1 or 2,
using the resin film having a diameter of 25mm and a thickness of 1mm as a second test piece, subjecting the second test piece to strain at 90 ℃ and a frequency of 1Hz, measuring the storage modulus of the second test piece, and when the storage modulus of the second test piece when the strain of the second test piece is 1% is Gc1 and the storage modulus of the second test piece when the strain of the second test piece is 300 is Gc300, the value X calculated from the following equation is 19 or more and less than 10000,
X＝Gc1/Gc300。
4. the resin film according to any one of claims 1 to 3, wherein the resin film is used for attachment to an uneven surface.
5. The resin film according to any one of claims 1 to 4, wherein the resin film is used for protecting a concave-convex surface and a side surface of a semiconductor chip.
6. A composite sheet comprising a support sheet and a resin film provided on one surface of the support sheet,
the resin film is the resin film according to any one of claims 1 to 5.
7. The composite sheet of claim 6,
the support sheet includes a base material and an adhesive layer provided on one surface of the base material, and the adhesive layer is disposed between the base material and the resin film.
8. The composite sheet according to claim 6 or 7, wherein the support sheet comprises a base material and a buffer layer provided on one surface of the base material, and the buffer layer is disposed between the base material and the resin film.
9. A method for manufacturing a semiconductor chip with a first protective film using a semiconductor wafer,
the semiconductor chip with the first protective film includes a semiconductor chip and a first protective film provided on a side surface of the semiconductor chip and a surface having a bump,
the semiconductor wafer has bumps on one surface thereof and grooves as dividing positions of the semiconductor wafer,
the manufacturing method comprises a sticking step of sticking the resin film in the composite sheet according to any one of claims 6 to 8 to the one surface of the semiconductor wafer to prepare a semiconductor wafer with a resin film having the resin film on the one surface and the grooves filled with the resin film,
the manufacturing method further includes:
a curing step (1) of forming a semiconductor wafer with a first protective film including the semiconductor wafer and the first protective film provided on the one surface of the semiconductor wafer and filling the trench by thermally curing the resin film after the attaching step; a dividing step (1) of dividing the semiconductor wafer after the curing step (1) to produce a semiconductor chip group with a first protective film, the semiconductor chip group including a plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (1) for cutting the first protective film along a gap between the semiconductor chips in the semiconductor chip group with the first protective film after the dividing step (1), thereby producing the semiconductor chip with the first protective film; or
A cutting step (2) of cutting the first protective film along the trench in the semiconductor wafer with the first protective film after the attaching step and after the curing step (1), thereby producing a semiconductor wafer with the cut first protective film; and a dividing step (2) of dividing the semiconductor wafer after the cutting step (2) to produce the semiconductor chip with the first protective film; or
A dividing step (3) of dividing the semiconductor wafer after the attaching step to produce a semiconductor chip group with a resin film, the semiconductor chip group including a plurality of the semiconductor chips and the resin film provided in a gap between a surface of the plurality of the semiconductor chips having the bumps and the semiconductor chip; a curing step (3) of forming the first protective film by thermally curing the resin film after the dividing step (3), thereby producing a semiconductor chip group with the first protective film, which includes the plurality of semiconductor chips and the first protective film provided in a gap between a surface of the plurality of semiconductor chips having the bump and the semiconductor chip; and a cutting step (3) of cutting the first protective film along a gap between the semiconductor chips in the group of semiconductor chips with the first protective film after the curing step (3), thereby obtaining the semiconductor chip with the first protective film.
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JP2024047022A (en) * 2022-09-26 2024-04-05 株式会社レゾナック Manufacturing method of semiconductor device and adhesive film for semiconductor wafer processing
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351790A (en) * 2005-06-15 2006-12-28 Disco Abrasive Syst Ltd Method of manufacturing semiconductor chip
JP2010024431A (en) * 2008-06-17 2010-02-04 Hitachi Chem Co Ltd Adhesive composition, film type adhesive, adhesive sheet, and semiconductor device
WO2019098329A1 (en) * 2017-11-17 2019-05-23 リンテック株式会社 Thermosetting resin film, and first protective film-forming sheet
WO2019189173A1 (en) * 2018-03-30 2019-10-03 リンテック株式会社 Method for manufacturing semiconductor chip

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205426A (en) 1983-05-06 1984-11-21 Nippon Mining Co Ltd Converter operating method
WO2003003445A1 (en) * 2001-06-29 2003-01-09 Fujitsu Limited Sheet for underfill, method for underfilling semiconductor chip, and method for mounting semiconductor chip
JP4776188B2 (en) * 2004-08-03 2011-09-21 古河電気工業株式会社 Semiconductor device manufacturing method and wafer processing tape
JP2011171712A (en) * 2010-01-21 2011-09-01 Hitachi Chem Co Ltd Adhesive tape for semiconductor wafer processing, method of manufacturing semiconductor wafer with adhesive tape for semiconductor wafer processing, method of manufacturing semiconductor device, and semiconductor device
JP5738263B2 (en) * 2012-12-25 2015-06-17 日立化成株式会社 Manufacturing method of semiconductor device
CN105009277B (en) * 2013-03-19 2017-10-27 琳得科株式会社 Diaphragm formation film
JP6328987B2 (en) * 2014-04-22 2018-05-23 デクセリアルズ株式会社 Manufacturing method of semiconductor device
JP2015092594A (en) 2014-12-10 2015-05-14 日東電工株式会社 Protection layer formation film
CN108140567B (en) * 2015-11-04 2023-08-08 琳得科株式会社 Curable resin film and sheet for forming 1 st protective film
JP6950907B2 (en) 2015-11-04 2021-10-13 リンテック株式会社 Manufacturing method of semiconductor devices
JP6344811B1 (en) * 2016-10-05 2018-06-20 リンテック株式会社 First protective film forming sheet
CN110622302B (en) * 2017-05-17 2022-11-22 琳得科株式会社 Semiconductor device and method for manufacturing the same
JP7098221B2 (en) * 2017-09-08 2022-07-11 株式会社ディスコ Wafer processing method
CN111357088B (en) * 2017-11-17 2024-05-14 琳得科株式会社 Semiconductor chip with first protective film, method for manufacturing the same, and method for evaluating semiconductor chip-first protective film laminate
JP7064184B2 (en) * 2017-12-11 2022-05-10 日東電工株式会社 Manufacturing method of dicing tape integrated sealing sheet and semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351790A (en) * 2005-06-15 2006-12-28 Disco Abrasive Syst Ltd Method of manufacturing semiconductor chip
JP2010024431A (en) * 2008-06-17 2010-02-04 Hitachi Chem Co Ltd Adhesive composition, film type adhesive, adhesive sheet, and semiconductor device
WO2019098329A1 (en) * 2017-11-17 2019-05-23 リンテック株式会社 Thermosetting resin film, and first protective film-forming sheet
WO2019189173A1 (en) * 2018-03-30 2019-10-03 リンテック株式会社 Method for manufacturing semiconductor chip

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