CN115145347B - Second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset - Google Patents
Second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset Download PDFInfo
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- CN115145347B CN115145347B CN202210998932.4A CN202210998932A CN115145347B CN 115145347 B CN115145347 B CN 115145347B CN 202210998932 A CN202210998932 A CN 202210998932A CN 115145347 B CN115145347 B CN 115145347B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset, which comprises a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a starting circuit and a reference starting completion circuit, wherein the second-order temperature compensation circuit is connected with the reference generating circuit, the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit. The offset current of the transistor is adjusted by the adjustment resistor, and the temperature drift coefficient of the reference voltage is indirectly adjusted, so that the offset voltage of the operational amplifier is only an offset of direct current for the reference voltage, the temperature coefficient relation of first order or higher order does not exist, and the reference voltage can be adjusted to the optimal temperature drift coefficient only by one adjustment.
Description
Technical Field
The invention relates to a second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset.
Background
The bandgap reference is a crucial module in analog circuits and mixed signal circuits, and provides references for all voltages including power supply level and the like in a chip, the accuracy of the bandgap reference directly influences the performance index of the chip, and the accuracy of the bandgap reference mainly appears in temperature drift, namely the offset degree of the reference voltage along with temperature change.
Fig. 1 is a conventional bandgap reference generating circuit, which mainly includes an operational amplifier, a resistor, a triode and a current mirror. The base emitter voltage V BE1 of the resistor transistor Q1 is clamped to the positive end of the resistor R1 by utilizing the clamping function of the operational amplifier, the negative end voltage of the R1 is the base emitter voltage V BE2 of the transistor Q2, the transistor Q2 is formed by connecting N Q1 in parallel, and then the current I PTAT with positive temperature coefficient is generated, wherein the current value is as follows:
Wherein DeltaV BE is the emitter voltage difference of the triode Q1 and the triode Q2, V T is the intermediate quantity, k is the Boltzmann constant, T is the Kelvin temperature, Q is the electron charge quantity, and I PTAT is the first-order positive temperature coefficient current. MOS transistors M1, M2 and M3 are current mirrors, and I PTAT is mirror biased to transistors Q1, Q2 and Q3, then the voltage value of reference voltage V REF is:
V BE3 is the base emitter voltage of transistor Q2, which has a high order temperature coefficient with a negative temperature coefficient term. In the first-order temperature compensation bandgap reference, the high-order temperature coefficient of the base emitter voltage of the transistor is usually ignored, so that the absolute values of the temperature coefficients of V BE3 and Δv BE can be equal only by trimming the resistance value of R3, thereby obtaining V REF with a low temperature drift coefficient.
If the offset voltage of the operational amplifier is V OS, the current level of IPTAT is:
It can be seen that the positive temperature coefficient current is related to V OS, and that the voltage V BE has a nonlinear relationship with I PATA, then the temperature coefficient of V OS will affect the temperature drift of V REF, and because V OS has a larger discrete shape in the manufacturing process, this results in the temperature drift coefficient of V REF deteriorating, and the trimming is very inconvenient, besides, because the conventional bandgap reference only adopts first-order temperature compensation, it is difficult to make the temperature drift of the reference voltage below 10ppm, and fig. 2 is a conventional bandgap reference temperature drift simulation curve, and it can be seen that the reference voltage varies by about 2.5mV in the temperature range of-25 to 125 ℃, the temperature drift coefficient is about 13ppm, and the actually produced bandgap reference temperature drift value will be larger.
Disclosure of Invention
In order to solve the technical problems, the invention provides a second-order temperature compensation band-gap reference circuit which is simple in structure and insensitive to operational amplifier offset.
The technical scheme for solving the technical problems is as follows: the second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset comprises a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a starting circuit and a reference starting completion circuit, wherein the second-order temperature compensation circuit is connected with the reference generating circuit, the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit.
The second-order temperature compensation band-gap reference circuit insensitive to operational amplifier maladjustment is characterized in that the reference generating circuit comprises a first MOS tube, a first triode, a second triode, a first resistor, a second resistor and a third adjustable resistor, wherein the source electrode of the first MOS tube is connected with a power supply, the drain electrode of the first MOS tube, one end of the second resistor and one end of the third adjustable resistor are connected together and serve as the output end of the reference generating circuit, the other end of the third adjustable resistor is connected with the inverting input end of an operational amplifier and the emitter electrode of the first triode, the base electrode of the first triode, the collector electrode of the first triode, the base electrode of the second triode and the collector electrode of the second triode are connected together, the emitter electrode of the second triode is connected with one end of the first resistor, and the other end of the first resistor is connected with the other end of the second resistor and the same-phase input end of the operational amplifier.
The second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset comprises a fourth resistor, a fifth resistor and a third triode, wherein one end of the fourth resistor is connected with the emitter of the first triode, the other end of the fourth resistor is connected with one end of the fifth resistor and the emitter of the third triode together and is connected with reference current, the other end of the fifth resistor is connected with the non-inverting input end of the operational amplifier, and the base electrode of the third triode and the collector electrode of the third triode are connected together and are connected to the base electrode of the first triode.
The second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset comprises a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube, wherein the source electrode of the fifteenth MOS tube is connected with the source electrode of the sixteenth MOS tube and is connected with a reference current, the grid electrode of the fifteenth MOS tube is used as an inverting input end of the operational amplifier, the drain electrode of the fifteenth MOS tube is connected with the drain electrode of the seventeenth MOS tube, the grid electrode of the seventeenth MOS tube and the grid electrode of the eighteenth MOS tube and is used as a V 02 output port of the operational amplifier, the grid electrode of the sixteenth MOS tube is used as a non-inverting input end of the operational amplifier, the drain electrode of the sixteenth MOS tube is connected with the drain electrode of the eighteenth MOS tube and is used as a V 01 output port of the operational amplifier, and the source electrode of the seventeenth MOS tube is connected with the source electrode of the eighteenth MOS tube.
The second-order temperature compensation band-gap reference circuit insensitive to operational amplifier maladjustment comprises a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube, wherein the source electrodes of the second MOS tube and the third MOS tube are connected with a power supply, the grid electrodes of the second MOS tube, the grid electrodes of the first MOS tube, the grid electrodes of the third MOS tube, the drain electrodes of the second MOS tube, the drain electrodes of the fourth MOS tube and the drain electrodes of the fifth MOS tube are connected together, the grid electrodes of the fourth MOS tube are connected with the V 01 output port of the operational amplifier, the source electrodes of the fourth MOS tube are connected with the collector electrodes of the second triode, the source electrodes of the fifth MOS tube are grounded, the drain electrodes of the seventh MOS tube are connected with the power supply after passing through a resistor, the source electrodes of the seventh MOS tube are grounded, the grid electrodes of the seventh MOS tube, the grid electrodes of the sixth MOS tube, the drain electrodes of the sixth MOS tube are connected with the drain electrodes of the third MOS tube together, and the source electrodes of the sixth MOS tube are grounded.
The reference start-up completion circuit comprises an eighth MOS tube, a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube, a first inverter, a second inverter and a capacitor, wherein the grid electrode of the eighth MOS tube is connected with the V 02 output port of the operational amplifier, the grid electrode of the eighth MOS tube is grounded, the drain electrode of the eighth MOS tube, the drain electrode of the tenth MOS tube, the grid electrode of the tenth MOS tube and the grid electrode of the eleventh MOS tube are connected together, the source electrode of the tenth MOS tube is connected with the drain electrode of the ninth MOS tube, the grid electrode of the eleventh MOS tube is connected with the output port of the operational amplifier, the source electrode of the ninth MOS tube is grounded, the input end of the first inverter is connected with the drain electrode of the ninth MOS tube, the drain electrode of the twelfth MOS tube is connected with the grid electrode of the thirteenth MOS tube, the grid electrode of the thirteenth MOS tube is connected with the drain electrode of the thirteenth MOS tube, and the drain electrode of the thirteenth MOS tube is connected with the drain electrode of the thirteenth MOS tube, and the output end of the thirteenth MOS tube is connected with the drain electrode of the thirteenth MOS tube.
The invention has the beneficial effects that:
1. The offset introduced by the operational amplifier is only one direct current offset for the reference voltage, and has little influence on the temperature drift of the generated reference voltage; after the second-order temperature compensation circuit is adopted, the low-temperature drift datum reference voltage can be generated; after the starting circuit is forced to power up, the reference circuit enters a correct working point, and then a reference starting completion signal is sent out by the reference starting completion circuit to be used as enabling of other circuits applied by the system. The band gap reference circuit designed by the invention has the temperature drift as low as 2.5ppm, the operational amplifier imbalance has very small influence on the temperature drift performance, the circuit has high consistency under different process design environments, can provide accurate reference voltages for various high-precision signal processing circuits and signal reading circuits, and has wide application prospects.
2. The offset current of the transistor is adjusted by the adjustment resistor, and the temperature drift coefficient of the reference voltage is indirectly adjusted, so that the offset voltage of the operational amplifier is only an offset of direct current for the reference voltage, the temperature coefficient relation of first order or higher order does not exist, and the reference voltage can be adjusted to the optimal temperature drift coefficient only by one adjustment.
Drawings
Fig. 1 is a schematic diagram of a conventional bandgap reference circuit.
Fig. 2 is a graph of a conventional bandgap reference voltage temperature simulation.
Fig. 3 is a block diagram of a circuit structure of the present invention.
Fig. 4 is a circuit diagram of the reference generating circuit and the starting circuit of the present invention.
FIG. 5 is a circuit diagram of a second order temperature compensation circuit according to the present invention.
Fig. 6 is a circuit diagram of an operational amplifier of the present invention.
FIG. 7 is a graph of a second order temperature compensated bandgap reference voltage temperature simulation of the present invention.
Fig. 8 is a circuit diagram of a reference start-up completion circuit according to the present invention.
Detailed Description
The invention is further described below with reference to the drawings and examples.
As shown in fig. 3, the second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset comprises a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a starting circuit and a reference starting completion circuit, wherein the second-order temperature compensation circuit is connected with the reference generating circuit, the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit.
As shown in fig. 4, the reference generating circuit includes a first MOS transistor M1, a first triode Q1, a second triode Q2, a first resistor R1, a second resistor R2, and a third adjustable resistor R3, where the source of the first MOS transistor M1 is connected to a power supply, the drain of the first MOS transistor M1, one end of the second resistor R2, and one end of the third adjustable resistor R3 are connected together and serve as an output end of the reference generating circuit to output a reference voltage V REF, the other end of the third adjustable resistor R3 is connected to an inverting input end of the operational amplifier, an emitter of the first triode Q1 is connected, a base of the first triode Q1, a collector of the second triode Q2, and a collector of the second triode Q2 are connected together, the emitter of the second triode Q2 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is connected to the other end of the second resistor R2, and a non-inverting input end of the operational amplifier.
As shown in fig. 5, the second-order temperature compensation circuit includes a fourth resistor R4, a fifth resistor R5, and a third triode Q3, where one end of the fourth resistor R4 is connected to the emitter of the first triode Q1, the other end of the fourth resistor R4 is connected to one end of the fifth resistor R5 and the emitter of the third triode Q3 together and is connected to the reference current I REF, the other end of the fifth resistor R5 is connected to the non-inverting input end of the operational amplifier, and the base of the third triode Q3 and the collector of the third triode Q3 are connected together and are connected to the base of the first triode Q1.
As shown in fig. 6, the operational amplifier includes a fifteenth MOS transistor M15, a sixteenth MOS transistor M16, a seventeenth MOS transistor M17, and an eighteenth MOS transistor M18, where a source of the fifteenth MOS transistor M15 is connected to a source of the sixteenth MOS transistor M16 and is connected to a reference current I REF, a gate of the fifteenth MOS transistor M15 is used as an inverting input terminal of the operational amplifier, a drain of the fifteenth MOS transistor M15 is connected to a drain of the seventeenth MOS transistor M17, a gate of the seventeenth MOS transistor M17, and a gate of the eighteenth MOS transistor M18 are connected to each other and are used as V 02 output terminals of the operational amplifier, a gate of the sixteenth MOS transistor M16 is used as a non-inverting input terminal of the operational amplifier, a drain of the sixteenth MOS transistor M16 is connected to a drain of the eighteenth MOS transistor M18 and is used as a V 01 output terminal of the operational amplifier, and a source of the seventeenth MOS transistor M17 is connected to a source of the eighteenth MOS transistor M18.
As shown in fig. 4, the starting circuit includes a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, source electrodes of the second MOS transistor M2 and the third MOS transistor M3 are connected to a power supply, a gate electrode of the second MOS transistor M2, a gate electrode of the first MOS transistor M1, a gate electrode of the third MOS transistor M3, a drain electrode of the second MOS transistor M2, a drain electrode of the fourth MOS transistor M4, and a drain electrode of the fifth MOS transistor M5 are connected together, a gate electrode of the fourth MOS transistor M4 is connected to a collector electrode of the second triode Q2, a source electrode of the fifth MOS transistor M5 is grounded, a drain electrode of the seventh MOS transistor M7 is connected to a power supply after passing through a resistor, a source electrode of the seventh MOS transistor M7 is grounded, and a gate electrode of the seventh MOS transistor M7, a gate electrode of the sixth MOS transistor M6, a drain electrode of the sixth MOS transistor M6 is connected to a drain electrode of the sixth MOS transistor M6, and a drain electrode of the sixth MOS transistor M3 is connected together.
As shown in fig. 7, the reference start-up completion circuit includes an eighth MOS transistor M8, a ninth MOS transistor M9, a tenth MOS transistor M10, an eleventh MOS transistor M11, a twelfth MOS transistor M12, a thirteenth MOS transistor M13, a fourteenth MOS transistor M14, a first inverter, a second inverter, and a capacitor, the gate of the eighth MOS transistor M8 is connected to the V 02 output port of the operational amplifier, the source of the eighth MOS transistor M8 is grounded, the drain of the eighth MOS transistor M10, the drain of the tenth MOS transistor M10, the gate of the eleventh MOS transistor M11, the source of the tenth MOS transistor M10 is connected to the power supply, the source of the eleventh MOS transistor M11 is connected to the drain of the ninth MOS transistor M9, the gate of the ninth MOS transistor M9 is connected to the V 01 output port of the operational amplifier, the source of the ninth MOS transistor M9 is grounded, the input of the ninth inverter is connected to the drain of the ninth MOS transistor M9, the drain of the thirteenth MOS transistor M12 is connected to the drain of the thirteenth MOS transistor M13, the drain of the thirteenth MOS transistor M13 is connected to the thirteenth transistor M14, and the drain of the thirteenth transistor M13 is connected to the thirteenth transistor M14.
Unlike conventional bandgap references, the present invention modifies R3 to change the bias current of transistors Q1 and Q2 to modify the temperature drift coefficient of the bandgap reference circuit. Let the input offset voltage of the operational amplifier be V OS, the current passing R1 be PTAT current, the size is:
For the emitter voltage difference of transistor Q1 and transistor Q2, I 1 is the collector current of transistor Q1, I 2 is the collector current of transistor Q2, then the bandgap reference voltage V REF is:
The value of the resistor R3 is properly adjusted, so that the absolute values of the first-order temperature coefficients of the right first term and the second term are the same, and the offset voltage V os of the intermediate op-amp is only one dc offset voltage V REF, which does not affect the temperature drift coefficient of the reference voltage.
The right circuit in fig. 4 is a start-up circuit, if the bandgap reference is not normally started after the power is turned on, and M3 and M6 have no current, so that the gates of M6 and M7 are at low potential, M7 is turned off, and simultaneously R3 pulls up Vstart, M5 is turned on, so that the gate potentials of M1, M2 and M3 are pulled down, the bandgap reference circuit is forced to pull out a zero state, and when the reference is started, the current of M7 mirrors the current of M6, so that Vstart is pulled down to low potential, and M5 is turned off, so that the start-up circuit does not affect the normal operation of the bandgap reference.
When considering the higher order temperature coefficient of a transistor, the base emitter voltage expression is:
Wherein V g0 is the bandgap reference voltage in the optimal state, V BE,Tr is the base emitter voltage of the transistor at 27 ℃, tr is the kelvin temperature corresponding to 27 ℃, η is a constant, it can be seen that the higher-order term of the temperature coefficient of V BE is positive, and the Gao Jiezheng temperature coefficient can be compensated by the second-order temperature compensation circuit shown in fig. 6. A reference current, such as a lower temperature coefficient, is biased to transistor Q3 while the emitter of Q3 is connected across the positive and negative inputs of the op-amp through resistors R4 and R5. The reference current I REF is a reference current with lower temperature drift generated by a system standby circuit, the temperature drift coefficient can be higher than 20ppm, R4 and R5 adopt ppoly resistors with smaller negative temperature, and a band gap reference simulation circuit adopting second-order temperature compensation is shown in figure 7, so that the reference voltage changes by about 0.4mV in the temperature range of-25 ℃ to 125 ℃, the temperature drift coefficient is about 2.5ppm, and the temperature drift coefficient is only 1/5 of the traditional band gap reference.
Fig. 8 shows a reference start-up completion circuit, when V REF rises to about the reference voltage, the output V 01 and V 02 OF the operational amplifier a are similar, since the size OF M10 is about 1/2 OF that OF M11, the drain voltage OF M11 will become high, ref_ok is set to 1, ref_ok can be used as enable, other circuit blocks OF the start-up system, and M13 and M14 in fig. 8 introduce hysteresis to prevent ref_of from being disturbed to shake.
Claims (1)
1. A second-order temperature compensation band gap reference circuit insensitive to operational amplifier maladjustment is characterized in that: the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit;
The reference generating circuit comprises a first MOS tube, a first triode, a second triode, a first resistor, a second resistor and a third adjustable resistor, wherein the source electrode of the first MOS tube is connected with a power supply, the drain electrode of the first MOS tube, one end of the second resistor and one end of the third adjustable resistor are connected together and serve as the output end of the reference generating circuit, the other end of the third adjustable resistor is connected with the inverting input end of the operational amplifier and the emitting electrode of the first triode, the base electrode of the first triode, the collecting electrode of the first triode, the base electrode of the second triode and the collecting electrode of the second triode are connected together, the emitting electrode of the second triode is connected with one end of the first resistor, and the other end of the first resistor is connected with the other end of the second resistor and the non-inverting input end of the operational amplifier;
The second-order temperature compensation circuit comprises a fourth resistor, a fifth resistor and a third triode, wherein one end of the fourth resistor is connected with the emitter of the first triode, the other end of the fourth resistor is connected with one end of the fifth resistor and the emitter of the third triode together and is connected with a reference current, the other end of the fifth resistor is connected with the non-inverting input end of the operational amplifier, and the base electrode of the third triode and the collector electrode of the third triode are connected together and are connected to the base electrode of the first triode;
The operational amplifier comprises a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube, wherein the source electrode of the fifteenth MOS tube is connected with the source electrode of the sixteenth MOS tube and is connected with a reference current, the grid electrode of the fifteenth MOS tube is used as an inverting input end of the operational amplifier, the drain electrode of the fifteenth MOS tube is connected with the drain electrode of the seventeenth MOS tube, the grid electrode of the seventeenth MOS tube and the grid electrode of the eighteenth MOS tube and is used as a V 02 output end of the operational amplifier, the grid electrode of the sixteenth MOS tube is used as a non-inverting input end of the operational amplifier, the drain electrode of the sixteenth MOS tube is connected with the drain electrode of the eighteenth MOS tube and is used as a V 01 output end of the operational amplifier, and the source electrode of the seventeenth MOS tube is connected with the source electrode of the eighteenth MOS tube;
The starting circuit comprises a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube, wherein the source electrodes of the second MOS tube and the third MOS tube are connected with a power supply, the grid electrodes of the second MOS tube, the first MOS tube, the grid electrodes of the third MOS tube, the drain electrodes of the second MOS tube, the drain electrodes of the fourth MOS tube and the drain electrodes of the fifth MOS tube are connected together, the grid electrodes of the fourth MOS tube are connected with the V 01 output port of the operational amplifier, the source electrodes of the fourth MOS tube are connected with the collector electrodes of the second triode, the source electrodes of the fifth MOS tube are grounded, the drain electrodes of the seventh MOS tube are connected with the power supply through a resistor, the source electrodes of the seventh MOS tube are grounded, the grid electrodes of the seventh MOS tube, the grid electrodes of the sixth MOS tube, the drain electrodes of the sixth MOS tube and the drain electrodes of the third MOS tube are connected together, and the source electrodes of the sixth MOS tube are grounded;
The reference starting completion circuit comprises an eighth MOS tube, a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube, a first inverter, a second inverter and a capacitor, wherein the grid electrode of the eighth MOS tube is connected with the V 02 output port of the operational amplifier, the source electrode of the eighth MOS tube is grounded, the drain electrode of the eighth MOS tube, the drain electrode of the tenth MOS tube, the grid electrode of the tenth MOS tube and the grid electrode of the eleventh MOS tube are connected together, the source electrode of the tenth MOS tube is connected with a power supply, the source electrode of the eleventh MOS tube is connected with the drain electrode of the ninth MOS tube, the grid electrode of the ninth MOS tube is connected with the V 01 output port of the operational amplifier, the source electrode of the ninth MOS tube is grounded, the input end of the first inverter is connected with the drain electrode of the ninth MOS tube, the drain electrode of the twelfth MOS tube and the grid electrode of the thirteenth MOS tube are grounded, the grid electrode of the twelfth MOS tube is connected with the grid electrode of the fifth MOS tube, the grid electrode of the thirteenth MOS tube is grounded, the grid electrode of the thirteenth MOS tube is connected with the grid electrode of the thirteenth MOS tube, the grid electrode of the thirteenth MOS tube is connected with the thirteenth MOS tube through the drain electrode of the capacitor, and the drain electrode of the thirteenth MOS tube is connected with the thirteenth MOS tube, and the drain electrode of the thirteenth MOS tube is connected with the fourteenth transistor.
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| CN115425841B (en) * | 2022-11-03 | 2023-03-31 | 禹创半导体(深圳)有限公司 | Compensation circuit and control method and device thereof, electronic equipment and medium |
| CN115877908B (en) * | 2023-03-02 | 2023-04-28 | 盈力半导体(上海)有限公司 | Band gap voltage reference circuit, second-order nonlinear correction circuit and chip thereof |
| CN116954296B (en) * | 2023-08-14 | 2024-07-12 | 盛泽芯集成电路(无锡)有限公司 | Low-power-consumption self-bias second-order compensation band-gap reference circuit |
| CN117055679B (en) * | 2023-10-10 | 2023-12-12 | 合肥奎芯集成电路设计有限公司 | Low-offset band-gap reference circuit and low-offset band-gap reference chip |
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