CN115136300A - 电子设备、芯片封装结构及其制作方法 - Google Patents
电子设备、芯片封装结构及其制作方法 Download PDFInfo
- Publication number
- CN115136300A CN115136300A CN202080096746.0A CN202080096746A CN115136300A CN 115136300 A CN115136300 A CN 115136300A CN 202080096746 A CN202080096746 A CN 202080096746A CN 115136300 A CN115136300 A CN 115136300A
- Authority
- CN
- China
- Prior art keywords
- chip
- insulating layer
- medium
- interposer
- adapter plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 46
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 95
- 229910052802 copper Inorganic materials 0.000 claims description 71
- 239000010949 copper Substances 0.000 claims description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000002070 nanowire Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 28
- 229910001887 tin oxide Inorganic materials 0.000 claims description 28
- 239000002105 nanoparticle Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000002086 nanomaterial Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 238000011049 filling Methods 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 28
- 230000010354 integration Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 238000005476 soldering Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000008093 supporting effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- -1 that is Chemical compound 0.000 description 3
- 229910016347 CuSn Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910006854 SnOx Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical group [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 229920003048 styrene butadiene rubber Polymers 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910013292 LiNiO Inorganic materials 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
一种电子设备、芯片封装结构及其制作方法;其中,芯片封装结构包括第一芯片(10)、转接板(20)以及位于第一芯片(10)和转接板(20)之间的至少一个电连接件(30),电连接件(30)的两端分别与第一芯片(10)和转接板(20)电连接;还包括:位于第一芯片(10)和转接板(20)之间且围设在电连接件(30)外周的高导热介质(40),高导热介质(40)的一端与第一芯片(10)接触,以实现对第一芯片(10)以及电连接件(30)的有效散热,从而可提高芯片封装结构的集成度,高导热介质(40)与电连接件(30)之间设置绝缘层(50),绝缘层(50)用于将高导热介质(40)与所述电连接件(30)隔开,以避免电连接件(30)上的电流扩散至高导热介质(40)上而造成漏电的情况,从而不仅确保了第一芯片(10)与转接板(30)之间的导通稳定性,而且不会对芯片封装结构外部的元器件造成电信号的干扰。
Description
PCT国内申请,说明书已公开。
Claims (27)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/079518 WO2021184166A1 (zh) | 2020-03-16 | 2020-03-16 | 电子设备、芯片封装结构及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115136300A true CN115136300A (zh) | 2022-09-30 |
Family
ID=77769964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080096746.0A Pending CN115136300A (zh) | 2020-03-16 | 2020-03-16 | 电子设备、芯片封装结构及其制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN115136300A (zh) |
WO (1) | WO2021184166A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118402058A (zh) * | 2022-04-20 | 2024-07-26 | 华为技术有限公司 | 芯片及其制备方法、电子设备 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08115947A (ja) * | 1994-10-17 | 1996-05-07 | Hitachi Ltd | 半導体装置の接合構造 |
WO2011008893A1 (en) * | 2009-07-15 | 2011-01-20 | Io Semiconductor | Semiconductor-on-insulator with backside heat dissipation |
CN102097339A (zh) * | 2009-12-08 | 2011-06-15 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN102646645A (zh) * | 2011-02-16 | 2012-08-22 | 三星半导体(中国)研究开发有限公司 | 封装结构及其制造方法 |
TW201250952A (en) * | 2010-11-22 | 2012-12-16 | Bridge Semiconductor Corp | Stackable semiconductor assembly with bump/base/flange heat spreader and build-up circuitry |
CN103779246A (zh) * | 2014-02-21 | 2014-05-07 | 江阴长电先进封装有限公司 | 一种高可靠性的铜柱凸块封装方法及其封装结构 |
US20160247775A1 (en) * | 2015-02-25 | 2016-08-25 | Ali Corporation | Chip packaging strcutre and manufaturing method thereof |
CN107195605A (zh) * | 2017-05-18 | 2017-09-22 | 上海交通大学 | 以薄镍层作为阻挡层的铜镍锡微凸点结构及其制备方法 |
TW201916280A (zh) * | 2017-09-28 | 2019-04-16 | 台灣積體電路製造股份有限公司 | 積體扇出型封裝及其形成方法 |
CN110299329A (zh) * | 2018-03-21 | 2019-10-01 | 华为技术有限公司 | 一种封装结构及其制作方法、电子设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7675157B2 (en) * | 2006-01-30 | 2010-03-09 | Marvell World Trade Ltd. | Thermal enhanced package |
TWI595613B (zh) * | 2014-11-18 | 2017-08-11 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
CN106298732A (zh) * | 2016-09-29 | 2017-01-04 | 中国电子科技集团公司第四十三研究所 | 一种用于系统级封装的转接板结构 |
CN107910315B (zh) * | 2017-11-10 | 2020-09-25 | 深圳市盛路物联通讯技术有限公司 | 芯片封装 |
CN108598061B (zh) * | 2018-05-04 | 2020-09-01 | 上海交通大学 | 一种陶瓷转接板结构及其制造方法 |
CN110620100A (zh) * | 2019-09-25 | 2019-12-27 | 上海先方半导体有限公司 | 一种适用于高密度高功率的封装结构及制造方法 |
-
2020
- 2020-03-16 CN CN202080096746.0A patent/CN115136300A/zh active Pending
- 2020-03-16 WO PCT/CN2020/079518 patent/WO2021184166A1/zh active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08115947A (ja) * | 1994-10-17 | 1996-05-07 | Hitachi Ltd | 半導体装置の接合構造 |
WO2011008893A1 (en) * | 2009-07-15 | 2011-01-20 | Io Semiconductor | Semiconductor-on-insulator with backside heat dissipation |
CN102097339A (zh) * | 2009-12-08 | 2011-06-15 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
TW201250952A (en) * | 2010-11-22 | 2012-12-16 | Bridge Semiconductor Corp | Stackable semiconductor assembly with bump/base/flange heat spreader and build-up circuitry |
CN102646645A (zh) * | 2011-02-16 | 2012-08-22 | 三星半导体(中国)研究开发有限公司 | 封装结构及其制造方法 |
CN103779246A (zh) * | 2014-02-21 | 2014-05-07 | 江阴长电先进封装有限公司 | 一种高可靠性的铜柱凸块封装方法及其封装结构 |
US20160247775A1 (en) * | 2015-02-25 | 2016-08-25 | Ali Corporation | Chip packaging strcutre and manufaturing method thereof |
CN107195605A (zh) * | 2017-05-18 | 2017-09-22 | 上海交通大学 | 以薄镍层作为阻挡层的铜镍锡微凸点结构及其制备方法 |
TW201916280A (zh) * | 2017-09-28 | 2019-04-16 | 台灣積體電路製造股份有限公司 | 積體扇出型封裝及其形成方法 |
CN110299329A (zh) * | 2018-03-21 | 2019-10-01 | 华为技术有限公司 | 一种封装结构及其制作方法、电子设备 |
Also Published As
Publication number | Publication date |
---|---|
WO2021184166A1 (zh) | 2021-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10177104B2 (en) | Package on package structure and method for forming the same | |
US9899286B2 (en) | Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask | |
US9679811B2 (en) | Semiconductor device and method of confining conductive bump material with solder mask patch | |
US8884430B2 (en) | Semiconductor device and method of confining conductive bump material during reflow with solder mask patch | |
JP6013705B2 (ja) | 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 | |
US9418913B2 (en) | Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding | |
CN100426495C (zh) | 电子装置及其制造方法 | |
US10388626B2 (en) | Semiconductor device and method of forming flipchip interconnect structure | |
WO2019042120A1 (zh) | 一种芯片封装结构及其制作方法、电子设备 | |
KR100842921B1 (ko) | 반도체 패키지의 제조 방법 | |
CN102171803A (zh) | 对无铅焊料合金进行掺杂以及由此形成的结构 | |
CN115136300A (zh) | 电子设备、芯片封装结构及其制作方法 | |
CN111128908A (zh) | 三维堆叠电路结构及其制备方法 | |
KR20230063426A (ko) | 반도체 패키지 및 그 제조방법 | |
CN112992658B (zh) | 焊盘上化学镀方法、半导体器件及其制造方法 | |
CN105720036A (zh) | 封装结构及其制法 | |
TWI498982B (zh) | 在以焊料遮罩補綴的回焊期間局限導電凸塊材料的半導體裝置和方法 | |
US11705421B2 (en) | Apparatus including solder-core connectors and methods of manufacturing the same | |
US20240038640A1 (en) | Semiconductor device | |
CN106981452B (zh) | 硅穿孔结构的电源和接地设计 | |
JP2012142486A (ja) | 半導体装置 | |
CN113113374A (zh) | 一种封装用圆球及其封装结构 | |
CN116130440A (zh) | 半导体倒装封装结构及其制作方法 | |
CN118507451A (zh) | 半导体结构和半导体结构的制造方法 | |
TW201015677A (en) | Flip-chip package structure, packaging substrate thereof and method for fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |