CN115053348A - 固态摄像元件和电子装置 - Google Patents

固态摄像元件和电子装置 Download PDF

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Publication number
CN115053348A
CN115053348A CN202180013417.XA CN202180013417A CN115053348A CN 115053348 A CN115053348 A CN 115053348A CN 202180013417 A CN202180013417 A CN 202180013417A CN 115053348 A CN115053348 A CN 115053348A
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CN
China
Prior art keywords
solid
image pickup
state image
pickup element
conductor portion
Prior art date
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Pending
Application number
CN202180013417.XA
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English (en)
Chinese (zh)
Inventor
岩渊信
伊藤智美
正垣敦
工藤義治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115053348A publication Critical patent/CN115053348A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
CN202180013417.XA 2020-03-16 2021-03-15 固态摄像元件和电子装置 Pending CN115053348A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020045553 2020-03-16
JP2020-045553 2020-03-16
PCT/JP2021/010393 WO2021187422A1 (ja) 2020-03-16 2021-03-15 固体撮像素子及び電子機器

Publications (1)

Publication Number Publication Date
CN115053348A true CN115053348A (zh) 2022-09-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180013417.XA Pending CN115053348A (zh) 2020-03-16 2021-03-15 固态摄像元件和电子装置

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Country Link
US (1) US20230197753A1 (https=)
EP (1) EP4123691A4 (https=)
JP (1) JPWO2021187422A1 (https=)
KR (1) KR20220155264A (https=)
CN (1) CN115053348A (https=)
WO (1) WO2021187422A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4614574A4 (en) * 2022-11-02 2026-01-07 Sony Semiconductor Solutions Corp IMAGING ELEMENT AND ELECTRONIC DEVICE

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102950629B1 (ko) * 2020-11-10 2026-04-13 삼성전자주식회사 이미지 센서
KR102898048B1 (ko) * 2021-01-27 2025-12-09 삼성전자주식회사 반도체 장치 및 이를 포함하는 이미지 센서
EP4513565A4 (en) * 2022-04-18 2025-11-05 Sony Semiconductor Solutions Corp OPTICAL DETECTION DEVICE

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JP2008099841A (ja) * 2006-10-18 2008-05-01 Shizuoka Prefecture 振動型卵子採取装置及び卵子洗浄回収器
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US20130334639A1 (en) * 2012-06-18 2013-12-19 Aeroflex Colorado Springs Inc. Photodiode with reduced dead-layer region
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
JP6491509B2 (ja) * 2015-03-25 2019-03-27 キヤノン株式会社 固体撮像装置及びその製造方法
KR102546550B1 (ko) * 2016-06-24 2023-06-23 에스케이하이닉스 주식회사 딥 트렌치들 내의 전달 게이트들을 갖는 이미지 센서
KR20180079518A (ko) * 2016-12-30 2018-07-11 삼성전자주식회사 씨모스 이미지 센서
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
KR102427639B1 (ko) * 2017-11-13 2022-08-01 삼성전자주식회사 이미지 센싱 소자
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
WO2021117523A1 (ja) * 2019-12-09 2021-06-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4614574A4 (en) * 2022-11-02 2026-01-07 Sony Semiconductor Solutions Corp IMAGING ELEMENT AND ELECTRONIC DEVICE

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Publication number Publication date
WO2021187422A1 (ja) 2021-09-23
US20230197753A1 (en) 2023-06-22
JPWO2021187422A1 (https=) 2021-09-23
EP4123691A1 (en) 2023-01-25
KR20220155264A (ko) 2022-11-22
EP4123691A4 (en) 2023-11-01

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