CN115032842A - 显示面板及显示终端 - Google Patents
显示面板及显示终端 Download PDFInfo
- Publication number
- CN115032842A CN115032842A CN202210775484.1A CN202210775484A CN115032842A CN 115032842 A CN115032842 A CN 115032842A CN 202210775484 A CN202210775484 A CN 202210775484A CN 115032842 A CN115032842 A CN 115032842A
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- Prior art keywords
- display panel
- electrode
- metal layer
- insulating layer
- layer
- Prior art date
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- 239000002184 metal Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000011368 organic material Substances 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
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- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
本申请实施例公开了一种显示面板及显示终端,显示面板包括:基底;第一金属层,设置于基底上;第二金属层,设置于第一金属层上;第一金属层包括沿第一方向延伸的多条数据线和薄膜晶体管的源极,源极与数据线电连接,第二金属层包括薄膜晶体管的漏极,漏极位于相邻的两数据线之间。在本申请实施例中,数据线、源极与漏极分别位于第一金属层和第二金属层,漏极位于相邻的两数据线之间,漏极与数据线位于不同层,相比漏极与数据线位于同层的现有技术不会存在刻蚀工艺限制的问题,使得漏极与数据线之间的间距得到减小,同时还减小了漏极与数据线之间的寄生电容,可以设置相邻的两数据线更近,子像素的尺寸可以变得更小,从而提升显示面板的分辨率。
Description
技术领域
本申请涉及显示领域,具体涉及一种显示面板及显示终端。
背景技术
各种类型的显示面板已经广泛用于手机、电脑、AR(Augmented Reality,增强现实)、VR(Virtual Reality,虚拟现实)等的显示屏幕。现有三维显示主要是基于牺牲分辨率的方式达到左右眼看到的内容不一样的目的,需要越来越高的分辨率。
然而,目前像素的版图(Layout)空间与工艺能力限制了分辨率的提升,特别是液晶显示面板的分辨率受到极大的限制,使得当前显示面板的分辨率难以提升。
发明内容
本申请实施例提供了一种显示面板及显示终端,以解决当前显示面板的分辨率难以提升的问题。
本申请实施例提供了一种显示面板,包括:
基底;
第一金属层,设置于所述基底上;
第二金属层,设置于所述第一金属层上;
其中,所述第一金属层包括沿第一方向延伸的多条数据线和薄膜晶体管的源极,所述源极与所述数据线电连接,所述第二金属层包括所述薄膜晶体管的漏极,所述漏极位于相邻的两所述数据线之间。
可选地,在本申请的一些实施例中,还包括:
第三金属层,设置于所述基底和所述第一金属层之间;
半导体层,设置于所述第一金属层和所述基底之间;
所述第三金属层包括沿第二方向延伸的扫描线,所述半导体层包括多个所述薄膜晶体管的多个有源件,所述有源件包括源极端和漏极端,以及连接在所述源极端和所述漏极端之间的有源连接件,所述第一方向不同于所述第二方向;
所述源极端和所述漏极端分别位于对应的所述扫描线的两侧,所述有源连接件至少沿第三方向延伸,所述第三方向不同于所述第一方向和所述第二方向;
所述源极电连接所述源极端,所述漏极电连接所述漏极端。
可选地,在本申请的一些实施例中,所述薄膜晶体管为单栅极结构。
可选地,在本申请的一些实施例中,所述第三方向与所述第一方向的夹角大于或等于5度,且小于或等于15度。
可选地,在本申请的一些实施例中,所述第三方向与所述第一方向的夹角为7度。
可选地,在本申请的一些实施例中,所述显示面板包括多个子像素,多个所述子像素包括分别位于一所述扫描线两侧的第一子像素和第二子像素,所述第一子像素的所述像素电极和所述第二子像素的所述像素电极之间具有间隙,所述间隙对应所述扫描线设置。
可选地,在本申请的一些实施例中,还包括:
栅极绝缘层,设置于所述半导体层和所述第三金属层之间;
第一绝缘层,设置于所述第三金属层和所述第一金属层之间;
第二绝缘层,设置于所述第一金属层和所述第二金属层之间;
其中,所述显示面板还包括贯穿所述栅极绝缘层和所述第一绝缘层的第一通孔,以及贯穿所述栅极绝缘层、所述第一绝缘层和所述第二绝缘层的第二通孔,所述源极通过所述第一通孔电连接所述源极端,所述漏极通过所述第二通孔电连接所述漏极端。
可选地,在本申请的一些实施例中,还包括:
第一电极层,设置于所述第一金属层上;
第四绝缘层,设置于所述第一电极层上;
第二电极层,设置于所述第四绝缘层上;
所述第一电极层和所述第二电极层中一个包括所述子像素的像素电极。
可选地,在本申请的一些实施例中,所述第一电极层包括所述子像素的像素电极,所述像素电极与所述漏极直接搭接。
可选地,在本申请的一些实施例中,还包括:
第三绝缘层,设置于所述第二绝缘层和所述第二金属层之间,所述第二绝缘层为有机材料,所述第三绝缘层为无机材料,所述第二通孔还贯穿所述第三绝缘层。
可选地,在本申请的一些实施例中,还包括:
第三电极层,设置于所述第二绝缘层和所述第三绝缘层之间,所述第三电极层包括多个存储电极,所述存储电极与所述像素电极至少部分重叠。
可选地,在本申请的一些实施例中,所述第二金属层的厚度大于或等于3500埃。
可选地,在本申请的一些实施例中,还包括:
第一盲孔,由所述第一电极层、所述第四绝缘层和所述第二电极层在对应所述第二通孔部位处的凹陷形成;
第五绝缘层,至少填充于所述第一盲孔,所述第五绝缘层为有机材料。
可选地,在本申请的一些实施例中,还包括:
彩膜基板,包括衬底和设置于所述衬底上的支撑柱,所述支撑柱位于所述衬底和所述基底之间,所述支撑柱在所述基底上的正投影与所述第五绝缘层在所述基底上的正投影不重叠。
相应地,本申请实施例还提供了一种显示终端,包括上述任一项所述的显示面板。
本申请实施例中,提供了一种显示面板及显示终端,显示面板包括:基底;第一金属层,设置于基底上;第二金属层,设置于第一金属层上;其中,第一金属层包括沿第一方向延伸的多条数据线和薄膜晶体管的源极,源极与数据线电连接,第二金属层包括薄膜晶体管的漏极,漏极位于相邻的两数据线之间。在本申请实施例中,数据线、源极与漏极分别位于第一金属层和第二金属层,漏极位于相邻的两数据线之间,漏极与数据线位于不同层,相比漏极与数据线位于同层的现有技术不会存在刻蚀工艺限制的问题,使得漏极与数据线之间的间距得到减小,同时还减小了漏极与数据线之间的寄生电容,可以设置相邻的两数据线更近,子像素的尺寸可以变得更小,从而提升显示面板的分辨率。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的一种显示面板的第一种局部截面示意图;
图2为本申请实施例提供的一种显示面板的局部结构的第一种俯视示意图;
图3为本申请实施例提供的一种显示面板的局部结构的第二种俯视示意图;
图4为本申请实施例提供的一种显示面板的第二种局部截面示意图;
图5为本申请实施例提供的一种显示面板的第三种局部截面示意图;
图6为本申请实施例提供的一种显示面板的第四种局部截面示意图;
图7为本申请实施例提供的一种显示终端的示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。此外,应当理解的是,此处所描述的具体实施方式仅用于说明和解释本申请,并不用于限制本申请。在本申请中,在未作相反说明的情况下,使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下,具体为附图中的图面方向;而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供了一种显示面板,显示面板包括:基底;第一金属层,设置于基底上;第二金属层,设置于第一金属层上;其中,第一金属层包括沿第一方向延伸的多条数据线和薄膜晶体管的源极,源极与数据线电连接,第二金属层包括薄膜晶体管的漏极,漏极位于相邻的两数据线之间。
本申请实施例还提供了一种包括前述显示面板的显示终端。以下分别进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。
实施例一、
请参阅图1、图2和图3;图1为本申请实施例提供的一种显示面板的第一种局部截面示意图;图2为本申请实施例提供的一种显示面板的局部结构的第一种俯视示意图;图3为本申请实施例提供的一种显示面板的局部结构的第二种俯视示意图。图2与图3呈现的是显示面板同一部位的俯视图,为了更清楚的说明显示面板100的结构,图2与图3选择性的呈现了不同的层结构。
本申请实施例提供了一种显示面板100,显示面板100包括基底11、第一金属层18和第二金属层20,第一金属层18设置于基底11上;第二金属层20设置于第一金属层18上;其中,第一金属层18包括沿第一方向X延伸的多条数据线182和薄膜晶体管101的源极181,源极181与数据线182电连接,第二金属层20包括薄膜晶体管101的漏极201,漏极201位于相邻的两数据线182之间。
具体地,显示面板100包括基底11、第一金属层18和第二金属层20,第一金属层18设置于基底11上,第二金属层20设置于第一金属层18上,第一金属层18与第二金属层20之间还设置有对应的绝缘层,在后续实施例详细介绍。
具体地,基底11可以为玻璃等材料,在此不做限定。
具体地,第一金属层18包括沿第一方向X延伸的多条数据线182和薄膜晶体管101的源极181,源极181与数据线182电连接,在图2中,源极181为数据线182的一部分,但不限于此,例如源极181为数据线182突出的一部分。
具体地,源极181与数据线182电连接,第二金属层20包括薄膜晶体管101的漏极201,漏极201位于相邻的两数据线182之间。漏极201与源极181为不同层的金属层。
具体地,在本实施例中,数据线182、源极181与漏极201分别位于第一金属层18和第二金属层20,漏极201位于相邻的两数据线182之间,漏极201与数据线182位于不同层,相比漏极201与数据线182位于同层的现有技术不会存在刻蚀工艺限制的问题(现有技术中,漏极201与数据线182位于同一层的金属层,漏极201与数据线182之间需要保持较大的距离,避免刻蚀残留导致短路,且要避免寄生电容过大),使得漏极201与数据线182之间的间距得到减小,同时还减小了漏极201与数据线182之间的寄生电容,可以设置相邻的两数据线182更近,子像素的尺寸可以变得更小,从而提升显示面板100的分辨率。
实施例二、
本实施例与实施例一相同或相似,不同之处在于进一步限定了显示面板100的特征。请参阅图1至图3。
在一些实施例中,显示面板100还包括第三金属层16和半导体层14;第三金属层16设置于基底11和第一金属层18之间;半导体层14设置于第一金属层18和基底11之间;第三金属层16包括沿第二方向Y延伸的扫描线162,半导体层14包括多个薄膜晶体管101的多个有源件141,有源件141包括源极端1411和漏极端1412,以及连接在源极端1411和漏极端1412之间的有源连接件1414,第一方向X不同于第二方向Y;源极端1411和漏极端1412分别位于对应的扫描线162的两侧,有源连接件1414至少沿第三方向Z延伸,第三方向Z不同于第一方向X和第二方向Y;源极181电连接源极端1411,漏极201电连接漏极端1412。
具体地,第一方向X、第二方向Y和第三方向Z均是指同一平面的方向,均是指平行于基底11的平面上的方向。
具体地,半导体层14的材料可以为多晶硅,但不限于此。容易理解的,有源件141为半导体层14中对应一个薄膜晶体管101的部位。源极端1411和漏极端1412为有源件141中重掺杂区域,源极端1411即为有源件141的源极区,漏极端1412即为有源件141的漏极区。
具体地,多条数据线182沿第一方向X延伸,多条扫描线162沿第二方向Y延伸,第一方向X不同于第二方向Y,即第一方向X与第二方向Y相交。优选的,或可选地,第一方向X与第二方向Y相互垂直。
具体地,有源件141包括源极端1411和漏极端1412,以及连接在源极端1411和漏极端1412之间的有源连接件1414,源极端1411和漏极端1412分别位于对应的扫描线162的两侧,有源连接1414件至少沿第三方向Z延伸。在图2和图3中,有源连接1414件在基底11上的正投影与扫描线162在基底上的正投影相交,使得源极端1411和漏极端1412分别位于对应的扫描线162的两侧,相比于源极端1411和漏极端1412位于对应的扫描线162的一侧,可以减小子像素在第一方向X或/和第二方向Y上的宽度,从而可以提升显示面板的分辨率。
具体地,有源连接件1414至少沿第三方向Z延伸,第三方向Z不同于第一方向X和第二方向Y。即第三方向Z相对于第一方向X倾斜,第三方向Z相对于第二方向Y倾斜。
具体地,扫描线162与有源连接件1414在垂直于基底11的方向上层叠设置部位为栅极161,即栅极161可以为扫描线162的一部分,但不限于此,例如栅极161可以为扫描线162突出或延伸出的一部分。
具体地,有源连接1414件至少沿第三方向Z延伸,可以使得漏极端1412至少一部分位于相邻的两数据线182之间,从而使得漏极201位于相邻的两数据线182之间也可以电连接漏极端1412,从而提升显示面板100的分辨率。
在一些实施例中,薄膜晶体管101为单栅极结构。
具体地,薄膜晶体管101为单栅极结构,薄膜晶体管101只有一个栅极,相比于双栅结构,子像素的尺寸可以变得更小,从而提升显示面板100的分辨率。
具体地,在上述任一项地显示面板100中,薄膜晶体管101为单栅极结构,即有源连接1414件在基底11上的正投影与扫描线162在基底上的正投影相交一次,使得子像素在第一方向X或/和第二方向Y上的宽度更小,从而可以提升显示面板的分辨率。
在一些实施例中,第三方向Z与第一方向X的夹角α大于或等于5度,且小于或等于15度。
具体地,设置第三方向Z与第一方向X的夹角α大于或等于5度,使得漏极端1412在基底11上的正投影与漏极201在基底上的正投影至少部分重叠设置,便于漏极201通过后续实施例介绍的第二通孔106电连接漏极端1412。
在一些实施例中,第三方向Z与第一方向X的夹角α为7度。
具体地,优选的,第三方向Z与第一方向X的夹角α为7度,既可以保证薄膜晶体管101的有源件141具有合适长宽比的沟道,也可以保证漏极201与漏极端1412良好的电连接性能,适合于高分辨率显示面板。
在一些实施例中,在上述任一项的显示面板100中,显示面板100包括多个子像素110,多个子像素110包括分别位于一扫描线162两侧的第一子像素111和第二子像素112,第一子像素111的像素电极211和第二子像素112的像素电极211之间具有间隙113,间隙113对应扫描线162设置。
具体地,第一子像素111的像素电极211和第二子像素112的像素电极211之间具有间隙113,即第一子像素111的像素电极211和第二子像素112的像素电极211对应或在间隙113处间隔设置,第一子像素111的像素电极211和第二子像素112的像素电极211不需要延伸至对应的扫描线162的另一侧,可以减小彩膜基板上黑色矩阵(Black Matrix,BM)的遮挡宽度,从而提升开口率,有助于提升显示面板的分辨率。
实施例三、
本实施例与上述实施例中任一项的显示面板100相同或相似,不同之处在于进一步限定了显示面板100的特征。
请参阅图1、图4、图5、图6;图4为本申请实施例提供的一种显示面板的第二种局部截面示意图;图5为本申请实施例提供的一种显示面板的第三种局部截面示意图;图6为本申请实施例提供的一种显示面板的第四种局部截面示意图。
在一些实施例中,如图1所示,显示面板100还包括栅极绝缘层15、第一绝缘层17和第二绝缘层19。栅极绝缘层15设置于半导体层14和第三金属层16之间;第一绝缘层17设置于第三金属层16和第一金属层18之间;第二绝缘层19设置于第一金属层18和第二金属层20之间;其中,显示面板100还包括贯穿栅极绝缘层15和第一绝缘层17的第一通孔105,以及贯穿栅极绝缘层15、第一绝缘层17和第二绝缘层19的第二通孔106,源极181通过第一通孔105电连接源极端1411,漏极201通过第二通孔106电连接漏极端1412。
具体地,第一绝缘层17和第二绝缘层19的材料可以包括无机材料或有机材料,例如第一绝缘层17和第二绝缘层19的材料可以包括氮化硅或/和氧化硅,在此不做限定。
具体地,漏极201通过第二通孔106电连接漏极端1412,从而实现了漏极201与薄膜晶体管101的电连接。
在一些实施例中,如图1所示,显示面板100还包括第一电极层21、第四绝缘层22和第二电极层23;第一电极层21设置于第一金属层18上;第四绝缘层22设置于第一电极层21上;第二电极层23设置于第四绝缘层22上;第一电极层21和第二电极层23中一个包括子像素110的像素电极211。
具体地,显示面板100为液晶显示面板时,第一电极层21可以包括像素电极211,则第二电极层23可以包括公共电极231;或者,显示面板100为液晶显示面板时,第一电极层21可以包括公共电极,则第二电极层23可以包括像素电极。此两种情况均具有上述实施例中的有益效果。
在一些实施例中,如图1、图4和图5所示,第一电极层21包括子像素的像素电极211,像素电极211与漏极201直接搭接。
具体地,第一电极层21包括子像素的像素电极211,像素电极211与漏极201直接搭接,此时,在制作完第二金属层20后可以直接制作第一电极层21,第一电极层21和第二金属层20之间不需要制作绝缘层,具有简化工艺的效果。
在一些实施例中,如图5所示,显示面板100还包括第三绝缘层25,第三绝缘层25设置于第二绝缘层19和第二金属层20之间,第二绝缘层19为有机材料,第三绝缘层25为无机材料,第二通孔106还贯穿第三绝缘层25。
具体地,第三绝缘层25设置于第二绝缘层19和第二金属层20之间,第二绝缘层19为有机材料,第三绝缘层25为无机材料,在第二通孔106的形成工艺中,第三绝缘层25和第二绝缘层19在同一工艺中刻蚀,第三绝缘层25可以起到保护第二绝缘层19的作用,防止有机材料的第二绝缘层19被过刻蚀,避免形成底切(Undercut)结构,提升漏极201与漏极端1412的连接可靠性。
在一些实施例中,如图5所示,显示面板100还包括第三电极层26,第三电极层26设置于第二绝缘层19和第三绝缘层25之间,第三电极层26包括多个存储电极261,存储电极261与像素电极211至少部分重叠。
具体地,存储电极261与像素电极211至少部分重叠,即存储电极261在基底11上的正投影与像素电极211在基底11上的投影至少部分重叠。
具体地,高分辨率的显示面板中的像素电极211和公共电极的重叠面积较小,存储电容不够,因此设置第三电极层26包括多个存储电极261,存储电极261与像素电极211至少部分重叠,可以增大高分辨率的显示面板中的存储电容,提高像素电极211充电后的电压稳定性,提高显示效果。
在一些实施例中,第二金属层20的厚度大于或等于3500埃。
具体地,第二通孔106贯穿过较多膜层,第二通孔106具有较大深度,第二金属层20的厚度大于或等于3500埃,第二金属层20在一定程度上可以起到填充或填平第二通孔106的作用,为后续像素电极211等膜层提供较为平坦的承载界面。
在一些实施例中,显示面板100还包括第一盲孔107和第五绝缘层24,第一盲孔107由第一电极层21、第四绝缘层22和第二电极层23在对应第二通孔106部位处的凹陷形成;第五绝缘层24至少填充于第一盲孔107,第五绝缘层24为有机材料。
具体地,第一电极层21、第四绝缘层22和第二电极层23的膜层较薄,第一电极层21、第四绝缘层22和第二电极层23在对应第二通孔106部位处的凹陷形成第一盲孔107,设置第五绝缘层24,且第五绝缘层24为有机材料,第五绝缘层24可以填平第一盲孔107,当显示面板100为液晶显示面板时,为设置在第五绝缘层24上的液晶层301提供平坦的界面,有助于保持显示面板100的液晶盒厚均匀性。
在一些实施例中,如图6所示,显示面板100还包括彩膜基板30,彩膜基板30包括衬底31和设置于衬底31上的支撑柱32,支撑柱32位于衬底31和基底11之间,支撑柱32在基底11上的正投影与第五绝缘层24在基底11上的正投影不重叠。
具体地,由于第五绝缘层24为有机材料,第五绝缘层24的厚度具有一定的波动性,通过设置支撑柱32在基底11上的正投影与第五绝缘层24在基底11上的正投影不重叠,可以避免显示面板100的液晶盒厚不均匀。
需要说明的是,在上述实施例中的任一项显示面板100中,显示面板100可以包括显示区AA和非显示区BB,非显示区BB至少部分围绕显示区AA设置,上述实施例中的薄膜晶体管101可以设置于显示区AA,也可以设置于非显示区BB。第三金属层16、第一金属层18、第二金属层20、第一电极层21和第二电极层23等可以在非显示区BB同时作为走线、连接电极、桥接电极等,例如,第三金属层16包括公共走线163,第二金属层20包括连接电极202,第二电极层23包括外围公共电极232,外围公共电极232通过连接电极202电连接公共走线163,在此不限定。
需要说明的是,在上述实施例中的任一项显示面板100中,在形成第一通孔105时,第一绝缘层17对应第一通孔105的部位全部刻蚀掉,而第一绝缘层17对应第二通孔106的部位只刻蚀掉一部分,第一绝缘层17对应第二通孔106的部位保留一部分以保护漏极端1412;再在形成第二通孔106时,第一绝缘层17保留的部分、第二绝缘层19对应第二通孔106的部位同时被刻蚀掉,或者第一绝缘层17保留的部分、第二绝缘层19和第三绝缘层25对应第二通孔106的部位同时被刻蚀掉。
实施例四、
请参阅图7,图7为本申请实施例提供的一种显示终端的示意图。
本申请实施例还提供了一种显示终端1000,显示终端1000包括上述实施例中任一项所述的显示面板100。
具体地,显示终端1000可以为手机、笔记本电脑和电视等,显示终端1000还可以包括终端主体1001,终端主体1001与显示面板100组合为一体,终端主体1001可以为显示终端1000的外壳等结构和部件。
以上对本申请实施例所提供的一种显示面板及显示终端进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。
Claims (15)
1.一种显示面板,其特征在于,包括:
基底;
第一金属层,设置于所述基底上;
第二金属层,设置于所述第一金属层上;
其中,所述第一金属层包括沿第一方向延伸的多条数据线和薄膜晶体管的源极,所述源极与所述数据线电连接,所述第二金属层包括所述薄膜晶体管的漏极,所述漏极位于相邻的两所述数据线之间。
2.如权利要求1所述的显示面板,其特征在于,还包括:
第三金属层,设置于所述基底和所述第一金属层之间;
半导体层,设置于所述第一金属层和所述基底之间;
所述第三金属层包括沿第二方向延伸的扫描线,所述半导体层包括多个所述薄膜晶体管的多个有源件,所述有源件包括源极端和漏极端,以及连接在所述源极端和所述漏极端之间的有源连接件,所述第一方向不同于所述第二方向;
所述源极端和所述漏极端分别位于对应的所述扫描线的两侧,所述有源连接件至少沿第三方向延伸,所述第三方向不同于所述第一方向和所述第二方向;
所述源极电连接所述源极端,所述漏极电连接所述漏极端。
3.如权利要求2所述的显示面板,其特征在于,所述薄膜晶体管为单栅极结构。
4.如权利要求3所述的显示面板,其特征在于,所述第三方向与所述第一方向的夹角大于或等于5度,且小于或等于15度。
5.如权利要求4所述的显示面板,其特征在于,所述第三方向与所述第一方向的夹角为7度。
6.如权利要求2至5中任一项所述的显示面板,其特征在于,所述显示面板包括多个子像素,所述子像素包括像素电极,多个所述子像素包括分别位于一所述扫描线两侧的第一子像素和第二子像素,所述第一子像素的所述像素电极和所述第二子像素的所述像素电极之间具有间隙,所述间隙对应所述扫描线设置。
7.如权利要求6所述的显示面板,其特征在于,还包括:
栅极绝缘层,设置于所述半导体层和所述第三金属层之间;
第一绝缘层,设置于所述第三金属层和所述第一金属层之间;
第二绝缘层,设置于所述第一金属层和所述第二金属层之间;
其中,所述显示面板还包括贯穿所述栅极绝缘层和所述第一绝缘层的第一通孔,以及贯穿所述栅极绝缘层、所述第一绝缘层和所述第二绝缘层的第二通孔,所述源极通过所述第一通孔电连接所述源极端,所述漏极通过所述第二通孔电连接所述漏极端。
8.如权利要求7所述的显示面板,其特征在于,还包括:
第一电极层,设置于所述第一金属层上;
第四绝缘层,设置于所述第一电极层上;
第二电极层,设置于所述第四绝缘层上;
所述第一电极层和所述第二电极层中一个包括所述子像素的像素电极。
9.如权利要求8所述的显示面板,其特征在于,所述第一电极层包括所述子像素的像素电极,所述像素电极与所述漏极直接搭接。
10.如权利要求8所述的显示面板,其特征在于,还包括:
第三绝缘层,设置于所述第二绝缘层和所述第二金属层之间,所述第二绝缘层为有机材料,所述第三绝缘层为无机材料,所述第二通孔还贯穿所述第三绝缘层。
11.如权利要求10所述的显示面板,其特征在于,还包括:
第三电极层,设置于所述第二绝缘层和所述第三绝缘层之间,所述第三电极层包括多个存储电极,所述存储电极与所述像素电极至少部分重叠。
12.如权利要求7所述的显示面板,其特征在于,所述第二金属层的厚度大于或等于3500埃。
13.如权利要求8所述的显示面板,其特征在于,还包括:
第一盲孔,由所述第一电极层、所述第四绝缘层和所述第二电极层在对应所述第二通孔部位处的凹陷形成;
第五绝缘层,至少填充于所述第一盲孔,所述第五绝缘层为有机材料。
14.如权利要求13所述的显示面板,其特征在于,还包括:
彩膜基板,包括衬底和设置于所述衬底上的支撑柱,所述支撑柱位于所述衬底和所述基底之间,所述支撑柱在所述基底上的正投影与所述第五绝缘层在所述基底上的正投影不重叠。
15.一种显示终端,其特征在于,包括如权利要求1至14中任一项所述的显示面板。
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KR20240003749A (ko) | 2024-01-09 |
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