CN115004368A - 3d nand存储器及其形成方法 - Google Patents
3d nand存储器及其形成方法 Download PDFInfo
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- CN115004368A CN115004368A CN202180010962.3A CN202180010962A CN115004368A CN 115004368 A CN115004368 A CN 115004368A CN 202180010962 A CN202180010962 A CN 202180010962A CN 115004368 A CN115004368 A CN 115004368A
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- metal silicide
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- 238000000034 method Methods 0.000 title claims abstract description 89
- 230000015654 memory Effects 0.000 title claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 246
- 239000002184 metal Substances 0.000 claims abstract description 246
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 144
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 144
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 49
- 238000003860 storage Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims description 53
- 238000002955 isolation Methods 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 6
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 491
- 230000008569 process Effects 0.000 description 52
- 238000000206 photolithography Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Memories (AREA)
Abstract
一种3D NAND存储器的形成方法，在沟道通孔中形成存储结构和位于所述存储结构上的多晶硅层，所述多晶硅层的表面低于所述介质层的顶部表面后，在所述多晶硅层表面形成第一金属硅化物层和位于第一金属硅化物层上的通孔接触金属层；将所述牺牲层替换为控制栅结构；在所述介质层中形成暴露出堆叠结构一侧的阱区部分表面的第一通孔以及暴露出相应的台阶结构表面的若干第二通孔；在所述第一通孔底部的阱区表面形成第二金属硅化物层；在所述第一通孔中形成第一接触插塞，在所述第二通孔中形成第二接触插塞。
Description
PCT国内申请，说明书已公开。
Claims (21)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011117206.4A CN112331671B (zh) | 2020-10-19 | 2020-10-19 | 3d nand存储器的形成方法 |
| CN2020111172064 | 2020-10-19 | ||
| PCT/CN2021/124789 WO2022083597A1 (zh) | 2020-10-19 | 2021-10-19 | 3d nand存储器及其形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115004368A true CN115004368A (zh) | 2022-09-02 |
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| CN202011117206.4A Active CN112331671B (zh) | 2020-10-19 | 2020-10-19 | 3d nand存储器的形成方法 |
| CN202111371053.0A Pending CN114188347A (zh) | 2020-10-19 | 2020-10-19 | 3d nand存储器的形成方法 |
| CN202180010962.3A Pending CN115004368A (zh) | 2020-10-19 | 2021-10-19 | 3d nand存储器及其形成方法 |
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| CN202011117206.4A Active CN112331671B (zh) | 2020-10-19 | 2020-10-19 | 3d nand存储器的形成方法 |
| CN202111371053.0A Pending CN114188347A (zh) | 2020-10-19 | 2020-10-19 | 3d nand存储器的形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230142924A1 (zh) |
| CN (3) | CN112331671B (zh) |
| WO (1) | WO2022083597A1 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112331671B (zh) * | 2020-10-19 | 2021-11-05 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101845511B1 (ko) * | 2011-10-11 | 2018-04-05 | 삼성전자주식회사 | 수직 구조의 비휘발성 메모리 소자 제조 방법 |
| KR102198856B1 (ko) * | 2014-02-10 | 2021-01-05 | 삼성전자 주식회사 | 니켈 함유막을 포함하는 반도체 소자의 제조 방법 |
| CN110010619B (zh) * | 2018-01-04 | 2021-01-05 | 旺宏电子股份有限公司 | 三维半导体元件及其制造方法 |
| KR20200015219A (ko) * | 2018-08-03 | 2020-02-12 | 삼성전자주식회사 | 수직형 메모리 장치 및 그 제조 방법 |
| CN109148461B (zh) * | 2018-08-17 | 2021-02-12 | 长江存储科技有限责任公司 | 3d存储器件及其制造方法 |
| CN109817623B (zh) * | 2019-03-27 | 2021-04-13 | 长江存储科技有限责任公司 | 3d nand存储器及其形成方法 |
| CN112331671B (zh) * | 2020-10-19 | 2021-11-05 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
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2020
- 2020-10-19 CN CN202011117206.4A patent/CN112331671B/zh active Active
- 2020-10-19 CN CN202111371053.0A patent/CN114188347A/zh active Pending
-
2021
- 2021-10-19 CN CN202180010962.3A patent/CN115004368A/zh active Pending
- 2021-10-19 WO PCT/CN2021/124789 patent/WO2022083597A1/zh active Application Filing
-
2022
- 2022-12-28 US US18/090,440 patent/US20230142924A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN114188347A (zh) | 2022-03-15 |
| WO2022083597A1 (zh) | 2022-04-28 |
| CN112331671B (zh) | 2021-11-05 |
| CN112331671A (zh) | 2021-02-05 |
| US20230142924A1 (en) | 2023-05-11 |
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