CN114930455A - 磁性随机存储器、数据读写方法及电子设备 - Google Patents

磁性随机存储器、数据读写方法及电子设备 Download PDF

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Publication number
CN114930455A
CN114930455A CN202080092161.1A CN202080092161A CN114930455A CN 114930455 A CN114930455 A CN 114930455A CN 202080092161 A CN202080092161 A CN 202080092161A CN 114930455 A CN114930455 A CN 114930455A
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China
Prior art keywords
storage
line
memory
string
random access
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Pending
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CN202080092161.1A
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English (en)
Inventor
李文静
叶力
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN114930455A publication Critical patent/CN114930455A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Abstract

一种磁性随机存储器，用于提高磁性随机存储器的存储密度。包括多个结构单元(202)以及多条电压控制线(203)，多条电压控制线(203)平行，多个结构单元(202)所在的平面平行，且所述多个结构单元(202)中的每个结构单元(202)所在的平面与所述多条电压控制线(203)垂直；其中，多个结构单元(202)中的每个结构单元(202)都包括相互平行的多个存储串(204)，每个存储串(204)都包括依次堆叠的多层存储结构，每层存储结构包括一条与所述多条电压线控制线(203)垂直的自旋轨道力矩SOT电极线以及设置于所述SOT电极线上的一个存储单元(201)；存储单元(201)包括一个磁性隧道结，存储单元(201)的一端与多条电压控制线(203)中的一条电压控制线(203)连接，存储单元(201)的另一端与SOT电极线连接；每个存储串(204)中的所有SOT电极线之间通过金属导线串联连接。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202080092161.1A 2020-05-27 2020-05-27 磁性随机存储器、数据读写方法及电子设备 Pending CN114930455A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/092515 WO2021237497A1 (zh) 2020-05-27 2020-05-27 磁性随机存储器、数据读写方法及电子设备

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CN114930455A true CN114930455A (zh) 2022-08-19

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EP (1) EP4145449A4 (zh)
CN (1) CN114930455A (zh)
WO (1) WO2021237497A1 (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168785A (ja) * 2001-11-30 2003-06-13 Toshiba Corp 磁気ランダムアクセスメモリ
US9780143B2 (en) * 2015-08-25 2017-10-03 Western Digital Technologies, Inc. Implementing magnetic memory integration with CMOS driving circuits
JP6316474B1 (ja) * 2017-03-21 2018-04-25 株式会社東芝 磁気メモリ
US10355045B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Three dimensional perpendicular magnetic junction with thin-film transistor
CN110660428A (zh) * 2018-06-29 2020-01-07 中电海康集团有限公司 存储器、其写入方法与读取方法
CN110277115B (zh) * 2019-06-24 2021-01-01 中国科学院微电子研究所 基于磁隧道结的存储器及其读写方法、制作方法

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EP4145449A4 (en) 2023-06-07
EP4145449A1 (en) 2023-03-08
WO2021237497A1 (zh) 2021-12-02

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