CN114878877A - Probe card and wafer testing method - Google Patents

Probe card and wafer testing method Download PDF

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Publication number
CN114878877A
CN114878877A CN202210625965.4A CN202210625965A CN114878877A CN 114878877 A CN114878877 A CN 114878877A CN 202210625965 A CN202210625965 A CN 202210625965A CN 114878877 A CN114878877 A CN 114878877A
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China
Prior art keywords
state
probe
length
probes
module
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CN202210625965.4A
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Chinese (zh)
Inventor
朱兆玮
黄丽婷
高阳
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China Agricultural University
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China Agricultural University
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Priority to CN202210625965.4A priority Critical patent/CN114878877A/en
Publication of CN114878877A publication Critical patent/CN114878877A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

The invention discloses a probe card and a wafer testing method, wherein the probe card comprises a substrate, a plurality of probes and a control module, the probes are arranged on the substrate and comprise a first state and a second state, the lengths of the probes in the first state and the second state are respectively a first length and a second length, the second length is greater than the first length, and the control module is used for controlling the probes to be switched between the first state and the second state. The probe card realizes the switching of the probes in the first state and the second state through the control module, can perform the reconfigurable distribution of the probes according to the distribution of the bonding pads on the wafer, is suitable for the test of all wafers, greatly reduces the test cost of the wafer and shortens the test period of the wafer.

Description

Probe card and wafer testing method
Technical Field
The invention belongs to the technical field of semiconductor testing, and particularly relates to a probe card and a wafer testing method.
Background
The probe card is an interface between a chip to be tested and a tester in wafer test (wafer test), and when a bare chip is tested, a communication interface of the tester and a pad (bonding pad) or Bump (gold Bump on the bonding pad, applied to an inverted packaging process) of the chip are directly connected through a probe on the probe card, so that the tester and the chip are directly communicated, and the parameter test of the tester on the chip is completed. The probe card is matched with a probe station, a tester and other test instruments and software control to achieve the purpose of automatic wafer test.
The probe card is applied to the middle test of the chip, and can reduce the cost occupied by chip packaging. After the wafer processing returns, no matter whether the wafer processing is used for the inverted packaging process or the hard packaging application, before the outward processing, the wafer center test is needed, the purpose is to perform the bare chip test before the packaging, and when a defective product is found, the probe station uses the map file for marking. In the subsequent flip-chip or hard-package process, the tested chip is subjected to surface mounting or hard-package according to the map file, so that unnecessary package cost can be saved.
The probe is an important component of the probe card, and is classified according to the material and working frequency of the probe as follows: 1. the probe is divided according to the probe material, and a tungsten probe, a cymbal copper probe and a tungsten-rhenium alloy probe are common; 2. the probe is divided according to the working frequency of the probe, and the probe is divided into a coaxial probe and a common probe.
The existing probe card needs to arrange the position of the probe according to the position of the pad (pad) on the wafer, and a wafer needs a customized probe card, which greatly increases the cost of the probe card and the time cost of the testing process.
Therefore, it is desirable to provide a probe card and a wafer testing method.
Disclosure of Invention
In view of the above, the present invention provides a probe card and a wafer testing method.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
a probe card comprises a substrate, a plurality of probes and a control module, wherein the probes are arranged on the substrate and comprise a first state and a second state, the lengths of the probes in the first state and the second state are respectively a first length and a second length, the second length is larger than the first length, and the control module is used for controlling the probes to be switched between the first state and the second state.
In one embodiment, the substrate is fixedly provided with a plurality of frame bodies, the frame bodies are internally sealed with conductive polymer materials, the control module is a heating module, and the heating module is arranged on the frame bodies and is in heat conduction connection with the conductive polymer materials.
In one embodiment, the probe comprises:
in a first state, the heating module does not work, and the conductive polymer material is positioned in the frame body;
and in the second state, the heating module works, and the conductive polymer material flows out of the frame body to form the conductive polymer probe.
In one embodiment, a plurality of brackets are fixedly mounted on the substrate, the shape memory alloy probes are fixedly mounted in the brackets, the control module is a heating module, and the heating module is mounted in the brackets and is in heat conduction connection with the shape memory alloy probes.
In one embodiment, the support is provided with a plurality of limiting members, a limiting channel is formed between the limiting members, and the shape memory alloy probe is retractable in the limiting channel.
In one embodiment, the probe comprises:
in the first state, the heating module does not work, the shape memory alloy probe is in the initial state, the length is the first length, and the shape memory alloy probe does not extend out of the limiting channel;
and in the second state, the heating module works, the shape memory alloy probe is in the working state, the length is the second length, the second length is greater than the first length, and the shape memory alloy probe extends out of the limiting channel.
In one embodiment, the substrate is fixedly provided with a plurality of brackets, the brackets are internally and fixedly provided with the superelastic alloy probes, and the control module is a magnetic module and/or a power module.
In one embodiment, the support is provided with a plurality of limiting members, a limiting channel is formed between the limiting members, a moving member is arranged in the support, the superelastic alloy probe comprises a deformation portion located between the substrate and the moving member and a needle tip portion fixedly installed on the moving member and extending and retracting in the limiting channel, and the magnetic module and/or the electric module are correspondingly and fixedly installed on the moving member and the limiting members.
In one embodiment, the probe comprises:
in the first state, the magnetic module and/or the power module do not work, the superelastic alloy probe is in the initial state, the length of the superelastic alloy probe is the first length, and the superelastic alloy probe does not extend out of the limiting channel;
and in the second state, the magnetic module and/or the power module work, the superelastic alloy probe is in the working state, the length of the superelastic alloy probe is the second length, the second length is greater than the first length, and the superelastic alloy probe extends out of the limiting channel.
The technical scheme provided by one embodiment of the invention is as follows:
a wafer testing method, comprising:
acquiring a surface image of a wafer;
acquiring position information of the bonding pad according to the surface image;
acquiring position information of a corresponding probe on the probe card according to the position information of the bonding pad;
and the control module controls the probes on the corresponding position information to be switched into a working state, and the rest probes are in an initial state.
The invention has the following beneficial effects:
the probe card realizes the switching of the probes in the first state and the second state through the control module, can perform the reconfigurable distribution of the probes according to the distribution of the bonding pads on the wafer, is suitable for the test of all wafers, greatly reduces the test cost of the wafer and shortens the test period of the wafer.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of a wafer testing method according to the present invention;
fig. 2a and 2b are schematic structural diagrams of a probe card in a first state (initial state) and a second state (working state) in embodiment 1, respectively;
fig. 3a and 3b are schematic structural diagrams of a probe card in a first state (initial state) and a second state (working state) in embodiment 2, respectively;
fig. 4a and 4b are schematic structural diagrams of a probe card in a first state (initial state) and a second state (working state) in embodiment 3, respectively.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention discloses a probe card which comprises a substrate, a plurality of probes and a control module, wherein the probes are arranged on the substrate and comprise a first state and a second state, the lengths of the probes in the first state and the second state are respectively a first length and a second length, the second length is greater than the first length, and the control module is used for controlling the probes to be switched between the first state and the second state.
Referring to fig. 1, the present invention also discloses a wafer testing method, which includes:
acquiring a surface image of a wafer;
acquiring position information of the bonding pad according to the surface image;
acquiring position information of a corresponding probe on the probe card according to the position information of the bonding pad;
and the control module controls the probes on the corresponding position information to be switched into a working state, and the rest probes are in an initial state.
The present invention is further illustrated by the following specific examples.
Example 1:
referring to fig. 2a and 2b, in the present embodiment, a plurality of frames 11 are fixedly mounted on a substrate 10, a conductive polymer material 12 is enclosed in the frames, a control module is a heating module 13, and the heating module 13 is mounted on the frames 11 and is in heat conduction connection with the conductive polymer material 12.
Fig. 2a and 2b are schematic structural diagrams of the probe card in a first state (initial state) and a second state (working state), wherein the lengths of the probes in the first state and the second state are respectively a first length and a second length, and the second length is greater than the first length, and the heating module 13 is used for controlling the probes to be switched between the first state and the second state so that the conductive polymer material on the corresponding position flows out of the frame to form the conductive polymer probes.
Specifically, the heating module is not operated in the first state, and the conductive polymer material is positioned inside the frame body; and in the second state, the heating module works, and the conductive polymer material flows out of the frame body to form the conductive polymer probe.
The wafer testing method in the embodiment specifically includes:
and S1, acquiring a surface image of the wafer.
And S2, acquiring the position information of the bonding pad according to the surface image.
After the position information of the pad (pad) is acquired, a pad position file is generated.
And S3, acquiring the position information of the corresponding probe on the probe card according to the position information of the bonding pad.
And addressing the pad position file through the addressing module to acquire the position information of the corresponding probe.
And S4, controlling the probes on the corresponding position information to be switched to a working state through the control module, wherein the rest probes are in an initial state.
And heating the probe on the corresponding position information by the heating module, and enabling the conductive polymer material to flow out of the frame to form the conductive polymer probe.
After the probe card is finished, the conductive polymer material flowing out of the frame body is removed through friction, and the probe card is restored to the initial state.
Example 2:
referring to fig. 3a and 3b, in the present embodiment, a plurality of brackets 21 are fixedly mounted on a substrate 20, shape memory alloy probes 22 are fixedly mounted in the brackets 21, a control module is a heating module 23, and the heating module 23 is mounted in the brackets and is in heat conduction connection with the shape memory alloy probes.
Further, the bracket 21 in this embodiment is provided with a plurality of limiting members 211, a limiting channel is formed between the limiting members 211, and the shape memory alloy probe extends and retracts in the limiting channel.
Fig. 3a and 3b are schematic structural diagrams of the probe card in a first state (initial state) and a second state (working state), respectively, in which the lengths of the probes are a first length and a second length, respectively, and the second length is greater than the first length, and the heating module 23 is configured to control the probes to switch between the first state and the second state, so that the shape memory alloy probes at corresponding positions are stretched in the limiting channel.
Specifically, the heating module does not work in the first state, the shape memory alloy probe is in the initial state, the length is the first length, and the shape memory alloy probe does not extend out of the limiting channel; and the heating module works in a second state, the shape memory alloy probe is in a working state, the length is a second length, the second length is greater than the first length, and the shape memory alloy probe extends out of the limiting channel.
The wafer testing method in the embodiment specifically includes:
and S1, acquiring a surface image of the wafer.
And S2, acquiring the position information of the bonding pad according to the surface image.
After the position information of the pad (pad) is acquired, a pad position file is generated.
And S3, acquiring the position information of the corresponding probe on the probe card according to the position information of the bonding pad.
And addressing the pad position file through the addressing module to acquire the position information of the corresponding probe.
And S4, controlling the probes on the corresponding position information to be switched to a working state through the control module, wherein the rest probes are in an initial state.
The probe on the corresponding position information is heated through the heating module, and the shape memory alloy probe extends along the extending limiting channel.
After the probe card is finished, the heating is stopped, and the shape memory alloy probe is restored to the initial state.
Example 3:
referring to fig. 4a and 4b, in the present embodiment, a plurality of brackets 31 are fixedly mounted on the substrate 30, the superelastic alloy probes 32 are fixedly mounted in the brackets, and the control module is a magnetic module 331 and/or a power module 332.
Further, in the present embodiment, the plurality of limiting members 311 are disposed on the bracket, a limiting channel is formed between the limiting members 311, a movable member 312 is disposed in the bracket 31, the superelastic alloy probe 32 includes a deformation portion 321 located between the base plate and the movable member and a tip portion 322 fixedly mounted on the movable member and extending and contracting in the limiting channel, and the magnetic module 331 and/or the electric module 332 are correspondingly and fixedly mounted on the movable member 312 and the limiting members 311.
Fig. 4a and 4b are schematic structural diagrams of the probe card in a first state (initial state) and a second state (working state), respectively, the lengths of the probes in the first state and the second state are respectively a first length and a second length, and the second length is greater than the first length, and the magnetic module 331 and/or the power module 332 are used for controlling the superelastic alloy probes to switch between the first state and the second state, so that the superelastic alloy probes in corresponding positions stretch and contract in the limit channel.
Specifically, the magnetic module and/or the power module do not work in the first state, the superelastic alloy probe is in the initial state, the length of the superelastic alloy probe is the first length, and the superelastic alloy probe does not extend out of the limiting channel; the magnetic module and/or the power module work under the second state, the superelastic alloy probe is in the working state, the length is the second length, the second length is greater than the first length, and the superelastic alloy probe extends out of the limiting channel.
The wafer testing method in the embodiment specifically includes:
and S1, acquiring a surface image of the wafer.
And S2, acquiring the position information of the bonding pad according to the surface image.
After the position information of the pad (pad) is acquired, a pad position file is generated.
And S3, acquiring the position information of the corresponding probe on the probe card according to the position information of the bonding pad.
And addressing the pad position file through the addressing module to acquire the position information of the corresponding probe.
And S4, controlling the probes on the corresponding position information to be switched to a working state through the control module, wherein the rest probes are in an initial state.
By applying a magnetic force or an electric force to the magnetic module and/or the electric module corresponding to the position information, the movable member 312 is pulled downward, and the deformation portion 321 of the superelastic alloy probe 32 is elongated, so that the tip portion 322 extends along the extension limiting channel.
After the probe card is finished, the application of the magnetic field force or the electric field force to the magnetic module and/or the electric module is stopped, and the superelastic alloy probe 32 is restored to the initial state.
According to the technical scheme, the invention has the following advantages:
the probe card realizes the switching of the probes in the first state and the second state through the control module, can perform the reconfigurable distribution of the probes according to the distribution of the bonding pads on the wafer, is suitable for the test of all wafers, greatly reduces the test cost of the wafer and shortens the test period of the wafer.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (10)

1. The probe card is characterized by comprising a substrate, a plurality of probes and a control module, wherein the probes are arranged on the substrate and comprise a first state and a second state, the lengths of the probes in the first state and the second state are respectively a first length and a second length, the second length is larger than the first length, and the control module is used for controlling the probes to be switched between the first state and the second state.
2. The probe card of claim 1, wherein the substrate has a plurality of frames fixedly mounted thereon, the frames enclosing an electrically conductive polymer material, the control module is a heating module mounted on the frames and thermally coupled to the electrically conductive polymer material.
3. The probe card of claim 2, wherein the probe comprises:
in a first state, the heating module does not work, and the conductive polymer material is positioned in the frame body;
and in the second state, the heating module works, and the conductive polymer material flows out of the frame body to form the conductive polymer probe.
4. The probe card of claim 1, wherein the substrate is fixedly mounted with a plurality of supports, the shape memory alloy probes are fixedly mounted in the supports, the control module is a heating module, and the heating module is mounted in the supports and is in thermal conductive connection with the shape memory alloy probes.
5. The probe card of claim 4, wherein the holder has a plurality of position-limiting members, a position-limiting channel is formed between the position-limiting members, and the shape memory alloy probe extends and contracts in the position-limiting channel.
6. The probe card of claim 4, wherein the probe comprises:
in the first state, the heating module does not work, the shape memory alloy probe is in the initial state, the length is the first length, and the shape memory alloy probe does not extend out of the limiting channel;
and in the second state, the heating module works, the shape memory alloy probe is in the working state, the length is the second length, the second length is greater than the first length, and the shape memory alloy probe extends out of the limiting channel.
7. The probe card of claim 1, wherein a plurality of brackets are fixedly mounted on the substrate, the brackets are fixedly mounted with the superelastic alloy probes, and the control module is a magnetic module and/or a power module.
8. The probe card of claim 7, wherein a plurality of position-limiting members are disposed on the support, a position-limiting channel is formed between the position-limiting members, a moving member is disposed in the support, the superelastic alloy probe includes a deformation portion located between the substrate and the moving member and a tip portion fixedly mounted on the moving member and extending and retracting in the position-limiting channel, and the magnetic module and/or the power module are correspondingly and fixedly mounted on the moving member and the position-limiting members.
9. The probe card of claim 8, wherein the probe comprises:
in the first state, the magnetic module and/or the power module do not work, the superelastic alloy probe is in the initial state, the length of the superelastic alloy probe is the first length, and the superelastic alloy probe does not extend out of the limiting channel;
and in the second state, the magnetic module and/or the power module work, the superelastic alloy probe is in the working state, the length of the superelastic alloy probe is the second length, the second length is greater than the first length, and the superelastic alloy probe extends out of the limiting channel.
10. A wafer testing method is characterized by comprising the following steps:
acquiring a surface image of a wafer;
acquiring position information of the bonding pad according to the surface image;
acquiring position information of a corresponding probe on the probe card according to the position information of the bonding pad;
and the control module controls the probes on the corresponding position information to be switched into a working state, and the rest probes are in an initial state.
CN202210625965.4A 2022-06-02 2022-06-02 Probe card and wafer testing method Pending CN114878877A (en)

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