JP2009150746A - Probe card, semiconductor integrated circuit testing device, and semiconductor integrated circuit test method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a damage of a measuring probe needle when performing a large-numbered parallel test, and to heighten inspection efficiency, concerning a probe card, a semiconductor integrated circuit testing device and a semiconductor integrated circuit test method. <P>SOLUTION: This probe card 1 equipped with a plurality of probe needle sets 3 corresponding respectively to a plurality of semiconductor integrated circuit chips 7 is provided with a mechanism 5 for switching a contact state/noncontact state to the semiconductor integrated circuit chip 7 relative to each probe needle set 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a probe card, a semiconductor integrated circuit test apparatus, and a semiconductor integrated circuit test method, and in particular, a probe card characterized by a structure for preventing damage to measurement probe needles when performing a parallel test of a large number of probes. The present invention relates to a semiconductor integrated circuit test apparatus and a semiconductor integrated circuit test method.

  In general, in the manufacturing process of a semiconductor integrated circuit device, after a large number of integrated circuit devices are formed on a silicon wafer, first, basic electrical characteristic tests are performed on each semiconductor integrated circuit device in the wafer state to determine whether the product is good or defective. Then, the wafer is diced into semiconductor chips, and only good chips are taken out and packaged.

With the recent improvement in the degree of integration of semiconductor integrated circuit devices, the test time in an electrical test in a wafer state (hereinafter referred to as a primary test) is also increasing.
As a countermeasure against this, a large number of parallel test methods for simultaneously measuring a plurality of semiconductor integrated circuit chips at the time of the primary test have been taken (see, for example, Patent Document 1 and Patent Document 2).

  In such a large number of parallel test methods, when a plurality of semiconductor integrated circuit chips are measured simultaneously, an interface (hereinafter referred to as a probe card) is used to simultaneously contact the measurement probe needles with the plurality of chips.

  However, since the measurement probe needles are simultaneously brought into contact with multiple chips, the other tip measurement needle set may come into contact with the edge of the wafer, such as when measuring the chip at the peripheral edge of the wafer. There is a problem that will be damaged.

In order to solve this problem, the measurement probe needle is devised and moved so as not to contact the edge of the wafer.
JP 2003-270268 A JP 2004-156976 A

  However, when the measurement location is devised and moved, there is a problem that the movement layout becomes complicated, increasing the number of programming steps and causing an input error.

  Depending on the measurement location, for example, in the vicinity of the periphery of the wafer, the number of semiconductor integrated circuit chips to be tested is smaller than the number of chip measurement needle sets, and a plurality of prepared needle measurement needle sets is provided. In some cases, only a part of the test can be tested, and the test time cannot be sufficiently shortened.

  Accordingly, an object of the present invention is to prevent the measurement probe needles from being damaged when performing a parallel test, and to increase the inspection efficiency.

FIG. 1 is a diagram illustrating the basic configuration of the present invention. Means for solving the problems in the present invention will be described with reference to FIG.
In order to solve the above-described problem, the present invention provides a probe card 1 having a plurality of probe needle sets 3 corresponding to a plurality of semiconductor integrated circuit chips 7 in the probe card 1, and each probe needle 1. It has a mechanism 5 for switching the contact state / non-contact state to the semiconductor integrated circuit chip 7 for each set 3.

  Thus, by providing the mechanism 5 for switching the contact state / non-contact state with respect to the semiconductor integrated circuit chip 7 for each probe needle set 3, a plurality of probe needle sets 3 for chips are located near the end of the semiconductor wafer 6. When coming, only the tip probe needle set 3 applied to the end portion of the semiconductor wafer 6 can be brought into a non-contact (OFF) state, whereby contact with the end portion of the semiconductor wafer 6 can be avoided. Therefore, damage to the probe needle 4 can be avoided.

  As the mechanism 5 for switching the contact state / non-contact state in this case, a compression / extension mechanism using an electromagnet may be used, or a compression / extension mechanism using air pressure may be used. The contact state / non-contact state can be switched at a high speed that does not affect the required time.

  Also, by providing the probe card 1 described above, it is possible to realize a semiconductor integrated circuit test apparatus in which the probe needle 4 is not damaged in the test of the chip near the end region of the semiconductor wafer 6.

  Further, when the test is performed using the semiconductor integrated circuit test apparatus having the probe card 1 described above, only the probe needle set 3 applied to the non-product chip region 8 in the end region of the semiconductor wafer 6 is brought into a non-contact state. The semiconductor integrated circuit chip 7 can be tested, and contact with the end of the semiconductor wafer 6 can be avoided, so that damage to the probe needle 4 can be avoided.

  According to the present invention, by having a mechanism for switching the contact state / non-contact state to the semiconductor integrated circuit chip for each probe needle set, when a plurality of probe needle sets for chips come near the semiconductor wafer edge, It is possible to switch between contact state and non-contact state at a high speed that does not affect the time required for test measurement, so that the probe needle set for the chip on the edge of the semiconductor wafer can be switched without requiring extensive programming. It is possible to avoid contact with the edge of the semiconductor wafer by making only the contactless (OFF) state.

  The present invention uses a mechanism, typically an electromagnet, for switching a contact state / non-contact state to a semiconductor integrated circuit chip for each probe needle set to a plurality of probe needle sets corresponding to a plurality of semiconductor integrated circuit chips. When performing a test using a semiconductor integrated circuit test apparatus equipped with a probe card equipped with a compression / extension mechanism using air pressure or a compression / extension mechanism using air pressure, a plurality of probe needle sets for chips come near the edge of the semiconductor wafer. In this case, only the probe needle set for the chip applied to the non-product chip at the end of the semiconductor wafer is brought into a non-contact (OFF) state, and other product chips are measured.

Next, the probe card according to the first embodiment of the present invention will be described with reference to FIGS. 2 to 5. Here, the probe card will be described as four simultaneous measurement probe cards.
See Figure 2
FIG. 2 is a conceptual configuration diagram of the probe card according to the first embodiment of the present invention, in which four probe needle sets 12 are provided on the probe card substrate 11.
Each probe needle set 12 includes, for example, 100 probe needles 15. The probe needles 15 are attached to a support substrate 13 having a suction portion 14 made of a ferromagnetic material on the back surface. The support substrate 13 is provided with a non-contact state / contact state control mechanism 16.

See Figure 3
FIG. 3 is a conceptual configuration diagram of the probe needle set according to the first embodiment of the present invention. The non-contact state / contact state control mechanism 16 includes protrusions 19 and 20 that serve as stoppers. 20 are provided with slide outer wall members 17 and 18 made of metal such as stainless steel that are slidably engaged with each other, and a spring member 21 that presses the probe needle 15 against the semiconductor chip with a predetermined pressure at the time of measurement is provided therein. The spring member 21 is in a compressed state, and the probe needle 15 is elastically deformed and sinks about 100 to 200 μm during measurement.

Further, the non-contact state / contact state control mechanism 16 is provided with an electromagnet solenoid 22, and the non-contact state is established by energizing the electromagnet solenoid 22 and electromagnetically attracting and pulling up the attracting portion 14 made of a ferromagnetic material. That is, the OFF state is realized.
Further, when the energization to the electromagnet solenoid 22 is stopped, the original force is restored to the original initial state (ON state at the time of measurement) by the restoring force of the spring member 21.

  The height of the non-contact state / contact state control mechanism 16 in the initial state is such that the protrusions 19 and 20 provided on the slide outer wall members 17 and 18 are engaged with each other by the restoring force of the spring member. In a non-contact state, the electromagnet solenoid 22 is energized and pulled up by, for example, about 500 μm.

  The detection signal from the probe needle 15 is sent to the semiconductor integrated circuit test apparatus via the support substrate 13, the non-contact state / contact state control mechanism 16, and the wiring provided on the probe card substrate 11.

See Figure 4
FIG. 4 is an explanatory diagram of a measurement state using the probe card according to the first embodiment of the present invention. Measurement is performed with the probe card 10 for every four semiconductor chips 31 provided on the semiconductor wafer 30.
Note that the non-product chip 32 applied to the end of the semiconductor wafer 30 is programmed so that the probe needle set 12 is in a non-contact state.

See Figure 5
FIG. 5 is an explanatory diagram of the contact state of the probe needle set at the time of measurement using the probe card according to the first embodiment of the present invention, and the semiconductor chip 31 as a product is extended without energizing the electromagnetic solenoid 22. In this state, the probe needle set 12 is brought into contact with the semiconductor chip 31 with a predetermined pressing force to test the electrical characteristics.

  On the other hand, the electromagnet solenoid 22 is energized with respect to the non-product chip 32 applied to the end portion of the semiconductor wafer 30 to be in a non-contact state in which the non-product chip 32 is not in contact with the electromagnet solenoid 22, for example.

  As described above, in the first embodiment of the present invention, the suction mechanism using the electromagnet is provided, and the spring member is further compressed to compress the non-contact state / contact state control mechanism. Since only the probe needle set for chips is in a non-contact state, the probe needle is not caught by the end portion of the semiconductor wafer and damaged.

  Further, unlike the prior art, it is not necessary to devise and move the measurement location so that the probe needle does not contact the edge of the wafer, so that the programming man-hours and input errors do not occur.

Next, a probe card according to a second embodiment of the present invention will be described with reference to FIG. 6. In the second embodiment, the non-contact state / contact state control mechanism is replaced with a mechanism using air pressure. Since the general configuration is exactly the same as in the first embodiment, only the configuration of the probe needle set will be described.
See FIG.
FIG. 6 is a conceptual configuration diagram of the probe needle set according to the second embodiment of the present invention. Each probe needle set 42 provided on the probe card substrate 41 includes, for example, 100 probe needles 44. The probe needle 44 is attached to a support substrate 43, and the support substrate 43 is provided with a non-contact state / contact state control mechanism 45 using air pressure.

  The non-contact state / contact state control mechanism 45 includes protrusions 48 and 49 that serve as stoppers, and includes slide outer wall members 46 and 47 made of metal such as stainless steel that are slidably engaged. Includes a spring member 50 that presses the probe needle 44 against the semiconductor chip at a predetermined pressure during measurement. The spring member 50 is in a compressed state, and the probe needle 44 is elastically deformed and sinks about 100 to 200 μm during measurement. .

Further, the non-contact state / contact state control mechanism 45 provided with the slide outer wall members 46 and 47 has airtightness that can withstand vacuum suction, and vacuum suction is performed via an intake port 51 provided in the probe card substrate 41. By lifting the support substrate 43, a non-contact state, that is, an OFF state is realized.
In addition, strict airtightness like a vacuum apparatus is not necessary.

Also in this case, the height of the non-contact state / contact state control mechanism 45 in the initial state is such that the protrusions 48 and 49 provided on the slide outer wall members 46 and 47 are engaged with each other by the restoring force of the spring member. Thus, for example, it is about 1 to 2 cm, and in a non-contact state, it is pulled up by, for example, about 500 μm by vacuum suction.
When the vacuum suction is stopped, the original initial state (ON state at the time of measurement) is restored by the restoring force of the spring member 50.

  As described above, in the second embodiment of the present invention, since the non-contact state / contact state control mechanism using the air pressure is provided, the probe needle is attached to the end portion of the semiconductor wafer as in the first embodiment. It won't be damaged by being caught.

  Further, in Example 2, since no electromagnetic solenoid is used, no magnetic field is generated. Therefore, the influence of the magnetic field can be eliminated in the electrical test measurement.

Next, a probe card according to a third embodiment of the present invention will be described with reference to FIG. 7. In the second embodiment, the non-contact state / contact state control mechanism is simply replaced with a mechanism using extension by air pressure. Since the basic configuration is exactly the same as that of the second embodiment, only the configuration of the probe needle set will be described.
See FIG.
FIG. 7 is a conceptual configuration diagram of the probe needle set according to the third embodiment of the present invention. Each probe needle set 42 provided on the probe card substrate 41 includes, for example, 100 probe needles 44. The probe needle 44 is attached to a support substrate 43, and the support substrate 43 is provided with a non-contact state / contact state control mechanism 52 that utilizes extension by air pressure.

  The non-contact state / contact state control mechanism 52 includes protrusions 55 and 56 that serve as stoppers, and includes slide outer wall members 53 and 54 made of metal such as stainless steel that are slidably engaged. Includes a spring member 57 that is fixed between the probe card substrate 41 and the support substrate 43 and extends more than the unloaded state.

Further, the non-contact state / contact state control mechanism 52 including the slide outer wall members 53 and 54 has airtightness that can withstand vacuum suction, and vacuum suction is performed via an air supply port 58 provided in the probe card substrate 41. Then, the non-contact state, that is, the OFF state is realized by pulling up the support substrate 43.
In this case as well, strict airtightness like a vacuum apparatus is not necessary.

In this case, the height of the non-contact state / contact state control mechanism 52 in the initial state is in a contracted state due to the restoring force of the spring member, for example, a non-contact state of about 1 to 2 cm. That is, in the ON state, for example, the air is lowered by about 500 μm by sending in air.
When the air blowing is stopped, the original non-contact state returns to the original initial state by the restoring force of the spring member 57.

As described above, in the third embodiment of the present invention, since the non-contact state / contact state control mechanism using the extension by the air pressure is provided, the probe needle is connected to the end of the semiconductor wafer as in the second embodiment. It will not be damaged by being caught in the part.
Also, in the case of Example 3, since no electromagnetic solenoid is used, no magnetic field is generated, and therefore, the influence of the magnetic field can be eliminated in the electrical test measurement.

  The embodiments of the present invention have been described above. However, the present invention is not limited to the configurations and conditions described in the embodiments, and various modifications are possible. For example, in the above embodiments, Is a probe card that performs four simultaneous measurements, but is not limited to four, as other multiple simultaneous measurement probe cards such as two simultaneous measurements, eight simultaneous measurements, or sixteen simultaneous measurements It ’s good.

  As a practical example of the present invention, a probe card used for a parallel test of a large number of semiconductor integrated circuit devices is typical, but the test target is not limited to the semiconductor integrated circuit device, and other superconducting circuits and the like. The present invention is also applied to an electronic circuit device.

It is explanatory drawing of the fundamental structure of this invention. It is a notional block diagram of the probe card of Example 1 of the present invention. It is a notional block diagram of the probe needle set of Example 1 of the present invention. It is explanatory drawing of the measurement state using the probe card of Example 1 of this invention. It is explanatory drawing of the contact condition of the probe needle set at the time of measurement using the probe card of Example 1 of this invention. It is a notional block diagram of the probe needle set of Example 2 of the present invention. It is a notional block diagram of the probe needle set of Example 3 of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe card 2 Probe card board 3 Probe needle set 4 Probe needle 5 Switching mechanism 6 Semiconductor wafer 7 Semiconductor integrated circuit chip 8 Non-product chip area 10 Probe card 11, 41 Probe card board 12, 42 Probe needle set 13, 43 Support board 14 Suction part 15, 44 Probe needle 16, 45, 52 Non-contact state / contact state control mechanism 17, 18, 46, 47, 53, 54 Slide outer wall member 19, 20, 48, 49, 55, 56 Projection part 21, 50, 57 Spring member 22 Electromagnet solenoid 30 Semiconductor wafer 31 Semiconductor chip 32 Non-product chip 51 Air inlet 58 Air inlet

Claims (5)

A probe card having a plurality of probe needle sets corresponding to a plurality of semiconductor integrated circuit chips, and having a mechanism for switching a contact state / non-contact state to the semiconductor integrated circuit chip for each probe needle set The probe card characterized by being. The probe card according to claim 1, wherein the mechanism for switching between the contact state and the non-contact state is a compression / extension mechanism using an electromagnet. The probe card according to claim 1, wherein the mechanism for switching between the contact state and the non-contact state is a compression / extension mechanism using air pressure. A semiconductor integrated circuit test apparatus comprising the probe card according to any one of claims 1 to 3 and means for driving a mechanism for switching the contact state / non-contact state. 5. A semiconductor integrated circuit device test method using the semiconductor integrated circuit test device according to claim 4, wherein a probe is applied to a non-product chip region at an end portion of a semiconductor wafer among a plurality of probe needle sets provided on the probe card. A method of testing a semiconductor integrated circuit, wherein a test of a semiconductor integrated circuit chip is performed with only the needle set in a non-contact state.

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