CN114868261A - 半导体结构及其衬底、半导体结构及其衬底的制作方法 - Google Patents
半导体结构及其衬底、半导体结构及其衬底的制作方法 Download PDFInfo
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- CN114868261A CN114868261A CN202080081004.0A CN202080081004A CN114868261A CN 114868261 A CN114868261 A CN 114868261A CN 202080081004 A CN202080081004 A CN 202080081004A CN 114868261 A CN114868261 A CN 114868261A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 32
- 238000005286 illumination Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
本申请提供了一种半导体结构及其衬底，半导体结构及其衬底的制作方法，衬底的制作方法中，自预制作衬底的背面在每一子单元区内开设凹槽，预制作衬底包括若干单元区，每一单元区包括至少两个子单元区；一个单元区中，各个子单元区的预设开孔率不同。基台向衬底传热过程中，预设开孔率不同的子单元区的传热效率不同，利用生长温度对多量子阱材料层的发光特性的影响，从而在衬底的正面生长发光层时，实现不同预设开孔率子单元区处对应的发光层的发光波长不同。上述工艺简单，且能在一个衬底上制作可用于全彩LED的半导体结构，减小了全彩LED的尺寸，降低了成本。
Description
PCT国内申请，说明书已公开。
Claims (16)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/071181 WO2021138871A1 (zh) | 2020-01-09 | 2020-01-09 | 半导体结构及其衬底、半导体结构及其衬底的制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114868261A true CN114868261A (zh) | 2022-08-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080081004.0A Pending CN114868261A (zh) | 2020-01-09 | 2020-01-09 | 半导体结构及其衬底、半导体结构及其衬底的制作方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11978826B2 (zh) |
| CN (1) | CN114868261A (zh) |
| WO (1) | WO2021138871A1 (zh) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7606276B2 (en) * | 2005-05-19 | 2009-10-20 | Panasonic Corporation | Nitride semiconductor device and method for fabricating the same |
| KR101382677B1 (ko) * | 2007-04-16 | 2014-04-07 | 엘지이노텍 주식회사 | 웨이퍼 기판, 반도체 발광소자 및 웨이퍼 기판을 이용한 반도체 발광소자 제조방법 |
| JP2009218569A (ja) * | 2008-02-13 | 2009-09-24 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物半導体からなる発光素子とその製造方法 |
| US8981397B2 (en) * | 2010-02-12 | 2015-03-17 | Tsmc Solid State Lighting Ltd. | Light-emitting devices on textured substrates |
| US10622515B2 (en) * | 2011-10-10 | 2020-04-14 | Sensor Electronic Technology, Inc. | Patterned layer design for group III nitride layer growth |
| TWI539624B (zh) * | 2012-05-28 | 2016-06-21 | 晶元光電股份有限公司 | 具有圖形化界面之發光元件及其製造方法 |
| US8981534B2 (en) * | 2012-09-14 | 2015-03-17 | Tsmc Solid State Lighting Ltd. | Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate |
| DE102012112302A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
| KR20160113892A (ko) * | 2015-03-23 | 2016-10-04 | 삼성전자주식회사 | 발광 소자 패키지 제조 방법 |
| CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
| WO2016202039A1 (zh) * | 2015-06-17 | 2016-12-22 | 厦门市三安光电科技有限公司 | 发光二极管及其制备方法 |
| TWI585911B (zh) * | 2015-08-12 | 2017-06-01 | 精材科技股份有限公司 | 一種感應器封裝體及其製造方法 |
| CN106784194A (zh) * | 2017-01-06 | 2017-05-31 | 上海应用技术大学 | 一种制备单芯片超宽带白光led的方法 |
| TWI785052B (zh) * | 2017-06-01 | 2022-12-01 | 美商康寧公司 | 包括穿透孔洞貫孔的組件基板及其製作方法 |
| CN107331743A (zh) * | 2017-08-29 | 2017-11-07 | 上海应用技术大学 | 一种制备基于铝酸锂衬底单芯片白光led的方法及其结构 |
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2020
- 2020-01-09 CN CN202080081004.0A patent/CN114868261A/zh active Pending
- 2020-01-09 US US17/273,295 patent/US11978826B2/en active Active
- 2020-01-09 WO PCT/CN2020/071181 patent/WO2021138871A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021138871A1 (zh) | 2021-07-15 |
| US20220131037A1 (en) | 2022-04-28 |
| US11978826B2 (en) | 2024-05-07 |
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