CN114864401A - 一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构 - Google Patents

一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构 Download PDF

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CN114864401A
CN114864401A CN202210431166.3A CN202210431166A CN114864401A CN 114864401 A CN114864401 A CN 114864401A CN 202210431166 A CN202210431166 A CN 202210431166A CN 114864401 A CN114864401 A CN 114864401A
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钟玉煌
张海涛
许彬
潘华
陆羽
蒲小东
王素素
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Wuxi Wuyue Semiconductor Co ltd
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Abstract

本发明公开了一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构，该GaN基HEMT器件外延结构包括依次层叠的ScAlMgO4衬底，i‑AlxGa1‑xN/i‑GaN超晶格层，i‑GaN层，i‑AlN层，i‑AlyGa1‑yN层，以及GaN或p型GaN层。与现有技术相比，本发明可以有效降低GaN薄膜缺陷密度，得到大尺寸高质量GaN HEMT器件。

Description

一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构
技术领域
本发明属于HEMT器件领域，具体涉及一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构。
背景技术
GaN基HEMT(高电子迁移率晶体管)器件是以AlGaN/GaN异质结为结构基础的氮化镓基器件，具有截止频率高、饱和电流高以及跨导高等优越性，能够适应大功率的工作环境。现有GaN基HEMT器件外延结构大多是利用Si衬底外延生长的，但Si衬底和GaN材料存在20.4％的晶格失配和56％的热失配，导致GaN外延膜在生长后薄膜内存在很大的张应力，导致生长的GaN薄膜缺陷密度相当高。
与其它传统衬底材料相比，铝镁酸钪(ScAlMgO4)与氮化镓的晶格失配率约1.8％，热膨胀系数失配也比其它传统衬底材料低，是一种理想的氮化镓外延生长衬底，但现有以铝镁酸钪为衬底外延生长氮化镓薄膜的报道相对较少。如专利文献CN106158592A公开了一种生长在铝酸镁钪衬底上的GaN薄膜的制备方法，其依次在铝酸镁钪衬底上生长GaN缓冲层、GaN形核层，GaN非晶层和GaN薄膜，获得高质量的GaN薄膜。又如专利文献CN113035689A公开了一种氮化镓单结晶基板的制造方法，其通过MOCVD方法在ScAlMgO4基板上低温生长GaN系缓冲层，在作为第二阶段生长的GaN系缓冲层上通过HVPE法高温生长GaN单晶层，经过切片、研磨抛光、清洗，实现无位错、无结晶缺陷的高品质GaN结晶基板。但采用上述现有技术在ScAlMgO4基板上生长的GaN薄膜质量并不太理想，GaN XRD(002)和(102)的半峰宽高达300arcsec以上。
发明内容
为了解决现有GaN基HEMT器件处延结构生长中存在的上述问题，本发明提供一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构。
为实现上述目的，本发明采用的技术方案如下：
一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构，包括依次层叠的ScAlMgO4衬底，i-AlxGa1-xN/i-GaN超晶格层，i-GaN层，i-AlN层，i-AlyGa1-yN层，以及GaN或p型GaN层。
优选地，所述i-AlxGa1-xN/i-GaN超晶格层的总厚度为200nm～4000nm，超晶格层厚度超出该范围会影响器件质量。其中，循环次数为2～200，各i-AlxGa1-xN层的厚度为10nm～1990nm，各i-GaN层的厚度为10nm～1990nm。
更优选地，所述x为0.01～0.6。
优选地，所述i-GaN层的厚度为500nm～5000nm，超出该厚度范围会影响器件质量，该层太薄所起到的作用有限，太厚会导致反应腔室的颗粒(particle)会增多，影响器件质量。
优选地，所述i-AlN层的厚度为0.1nm～10nm，超出该厚度范围会影响器件质量。
优选地，所述i-AlyGa1-yN层的厚度为5nm～500nm，超出该厚度范围会影响器件质量。
更优选地，所述y为0.01～0.6。
优选地，所述GaN或p型GaN层的厚度为1nm～150nm。
优选地，所述ScAlMgO4衬底以(001)面偏(110)面0～0.3度为外延面。
一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构的制备方法，包括：
(1)在ScAlMgO4衬底上外延生长i-AlxGa1-xN/i-GaN超晶格层；
(2)在i-AlxGa1-xN/i-GaN超晶格层上外延生长i-GaN层；
(3)在i-GaN层上外延生长i-AlN层；
(4)在i-AlN层上外延生长i-AlyGa1-yN层；
(5)在i-AlxGayN层上外延生长GaN或p型GaN层。
优选地，步骤(1)中，外延生长i-AlxGa1-xN/i-GaN超晶格层时，i-AlxGa1-xN的生长速率为0.1～1μm/h，i-GaN的生长速率为0.2～2μm/h。
优选地，步骤(2)中，外延生长i-GaN层的生长速率为0.5～5μm/h。
优选地，步骤(3)中，外延生长i-AlN层的生长速率为0.05～0.5μm/h。
优选地，步骤(4)中，外延生长i-AlyGa1-yN层的生长速率为0.2～2μm/h。
优选地，步骤(5)中，外延生长GaN或p型GaN层的生长速率为0.2～2μm/h，其中，p型GaN为掺Mg的GaN，掺杂浓度为1E15cm-3～3E19cm-3。
有益效果
与现有技术相比，本发明可以有效降低GaN薄膜缺陷密度，使GaN XRD(002)和(102)的半峰宽降至200arcsec以下，从而得到大尺寸高质量GaN HEMT器件。
附图说明
图1是本发明基于ScAlMgO4衬底的GaN基HEMT器件外延结构的示意图。
图2是本发明基于ScAlMgO4衬底的GaN基HEMT器件外延结构的生产工艺流程图。
具体实施方式
以下结合附图和实施例对本发明的技术方案做进一步详细说明。
本发明基于ScAlMgO4衬底的GaN基HEMT器件外延结构如图1所示，包括ScAlMgO4(SAM)衬底P0，在衬底P0的表面上依次层叠的i-AlxGa1-xN/i-GaN超晶格层P1，i-GaN层P2，i-AlN层P3，i-AlyGa1-yN层P4，以及GaN或p型GaN层P5。
所述ScAlMgO4衬底以(001)面偏(110)面0～0.3度为外延面。
所述i-AlxGa1-xN/i-GaN超晶格层P1为i-AlxGa1-xN层与i-GaN层相互交替循环的结构，i-AlxGa1-xN层与i-GaN层交替循环的次数为2～200。具体的循环次数有2、3、4、5、6、7、8、9、10、11、12、15、20、30、40、50、80、100、120、150、180或200等。
i-AlxGa1-xN层与i-GaN层交替循环(loop)次数的计算如下：
loop＝1:i-AlxGa1-xN/i-GaN，
loop＝2:i-AlxGa1-xN/i-GaN/i-AlxGa1-xN/i-GaN,
loop＝3:i-AlxGa1-xN/i-GaN/i-AlxGa1-xN/i-GaN/i-AlxGa1-xN/i-GaN，
其余loop依此类推。
所述i-AlxGa1-xN的x为0.01～0.6。具体的x值有0.01、0.05、0.1、0.15、0.2、0.25、0.3、0.35、0.4、0.45、0.5、0.55、0.6等。
所述i-AlxGa1-xN/i-GaN超晶格层P1的总厚度为200nm～4000nm。具体的总厚度有200nm、400nm、600nm、800nm、1000nm、1200nm、1400nm、1600nm、1800nm、2000nm、2600nm、3200nm或4000nm等。
在超晶格层中，各i-AlxGa1-xN层的厚度为10nm～1990nm，各i-GaN层的厚度为10nm～1990nm。
所述i-GaN层P2的厚度为500nm～5000nm。具体的厚度有500nm、600nm、800nm、1000nm、1500nm、2000nm、2500nm、3000nm、3500nm、4000nm、4500nm或5000nm等。
所述i-AlN层P3起到提升二维电子浓度的作用，其厚度为0.1nm～10nm。具体的厚度有0.1nm、0.2nm、0.4nm、0.8nm、1nm、1.2nm、1.5nm、2nm、2.5nm、3nm、3.5nm、4nm、5nm、5.5nm、6nm、6.5nm、7nm、7.5nm、8nm、8.5nm、9nm、9.5nm或10nm等。
所述i-AlyGa1-yN层P4的厚度为5nm～500nm。具体的厚度有50nm、60nm、70nm、80nm、100nm、120nm、150nm、200nm、250nm、300nm、350nm、400nm、450nm或500nm等。
所述i-AlyGa1-yN的y为0.01～0.6。具体的y值有0.01、0.05、0.1、0.15、0.2、0.25、0.3、0.35、0.4、0.45、0.5、0.55、0.6等。
所述GaN或p型GaN层P5的厚度为1nm～150nm。具体的厚度有1nm、10nm、20nm、40nm、60nm、70nm、80nm、90nm、100nm、120nm或150nm等。
所述p型GaN为掺Mg的pGaN，掺杂浓度为1E15cm-3～3E19cm-3。
1E15＝1.0×1015，3E19＝3.0×1019。
本发明GaN HEMT器件外延结构的各外延层可以选用传统的MOCVD(金属有机化学气相沉积)方法、CVD(化学气相沉积)方法、PECVD(等离子体增强化学气相沉积)方法、MBE(分子束外延)方法等生长，优选MOCVD方法。
本实施例中，选用MOCVD法在SAM的(001)面制备GaN HEMT器件外延结构的工艺流程如图2所示，具体过程如下：
(1)提供SAM衬底P0。
(2)第一外延层的生长：在衬底表面外延生长i-AlxGa1-xN/i-GaN超晶格层P1，生长温度在500～1100℃范围，所需气体流量N2为0～80L/min，H2流量为0～220L/min，NH3为0.1～60L/min，铝源为三甲基铝，镓源为三甲基镓，未掺杂的i-AlxGa1-xN层的生长速率为0.1～1μm/h，未掺杂的i-GaN层的生长速率为0.2～2μm/h(loop＝10，各i-AlxGa1-xN层厚度为100nm，各i-GaN层厚度为100nm，超晶格层总厚度2000nm)。
(3)第二外延层的生长：在超晶格层P1上外延生长未掺杂的i-GaN层P2，生长温度在1000～1100℃范围，所需气体流量N2为0～80L/min，H2流量为0～220L/min，NH3为0.1～60L/min，镓源为三甲基镓，生长速率为0.5～5μm/h。
(4)第三外延层的生长：在i-GaN层P2上外延生长未掺杂的i-AlN层P3，生长温度在900～1100℃范围，所需气体流量N2为0～80L/min，H2流量为0～220L/min，NH3为0.1～70L/min，铝源为三甲基铝，生长速率为0.05～0.5μm/h。
(5)第四外延层的生长：在i-AlN层P3上外延生长未掺杂的i-AlyGa1-yN层P4，生长温度在900～1120℃范围，所需气体流量N2为0～80L/min，H2流量为0～220L/min，NH3为0.1～70L/min，铝源为三甲基铝，镓源为三甲基镓，生长速率为0.2～2μm/h。
(6)第五外延层的生长：在i-AlyGa1-yN层P4上外延生长不掺杂的GaN或者为高掺Mg的pGaN层P5，生长温度在1000～1120℃范围，所需气体流量N2为0～80L/min，H2流量为0～220L/min，NH3为0.1～70L/min，镓源为三甲基镓，生长速率为0.2～2μm/h。
最后应说明的是：以上所述仅为本发明的优选实施例而已，并不用于限制本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构，其特征在于：包括依次层叠的ScAlMgO4衬底，i-AlxGa1-xN/i-GaN超晶格层，i-GaN层，i-AlN层，i-AlyGa1-yN层，以及GaN或p型GaN层。
2.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述i-AlxGa1-xN/i-GaN超晶格层的总厚度为200nm～4000nm，循环次数为2～200，其中，各i-AlxGa1-xN层的厚度为10nm～1990nm，各i-GaN层的厚度为10nm～1990nm。
3.根据权利要求2所述的GaN基HEMT器件外延结构，其特征在于：所述x为0.01～0.6。
4.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述i-GaN层的厚度为500nm～5000nm。
5.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述i-AlN层的厚度为0.1nm～10nm。
6.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述i-AlyGa1-yN层的厚度为5nm～500nm。
7.根据权利要求6所述的GaN基HEMT器件外延结构，其特征在于：所述y为0.01～0.6。
8.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述GaN或p型GaN层的厚度为1nm～150nm。
9.根据权利要求1所述的GaN基HEMT器件外延结构，其特征在于：所述ScAlMgO4衬底以(001)面偏(110)面0～0.3度为外延面。
10.一种基于ScAlMgO4衬底的GaN基HEMT器件外延结构的制备方法，包括：
(1)在ScAlMgO4衬底上外延生长i-AlxGa1-xN/i-GaN超晶格层；
(2)在i-AlxGa1-xN/i-GaN超晶格层上外延生长i-GaN层；
(3)在i-GaN层上外延生长i-AlN层；
(4)在i-AlN层上外延生长i-AlyGa1-yN层；
(5)在i-AlxGayN层上外延生长GaN或p型GaN层；
优选地包括以下一项或多项：
步骤(1)中，外延生长i-AlxGa1-xN/i-GaN超晶格层时，i-AlxGa1-xN的生长速率为0.1～1μm/h，i-GaN的生长速率为0.2～2μm/h；
步骤(2)中，外延生长i-GaN层的生长速率为0.5～5μm/h；
步骤(3)中，外延生长i-AlN层的生长速率为0.05～0.5μm/h；
步骤(4)中，外延生长i-AlyGa1-yN层的生长速率为0.2～2μm/h；
步骤(5)中，外延生长GaN或p型GaN层的生长速率为0.2～2μm/h，其中，p型GaN为掺Mg的GaN，掺杂浓度为1E15cm-3～3E19cm-3。
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