CN114823446A - 一种解决多尺寸晶圆传送的工艺方法 - Google Patents

一种解决多尺寸晶圆传送的工艺方法 Download PDF

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CN114823446A
CN114823446A CN202210457239.6A CN202210457239A CN114823446A CN 114823446 A CN114823446 A CN 114823446A CN 202210457239 A CN202210457239 A CN 202210457239A CN 114823446 A CN114823446 A CN 114823446A
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张志强
杨平
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Shanghai Jet Plasma Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Abstract

本发明公开了一种解决多尺寸晶圆传送的工艺方法，是由机器人将晶圆放置于晶圆升降针上，晶圆升降针处于升起状态；待开始真空至腔体压力低于100mT时，晶圆升降针下降，将晶圆放置于载盘表面，此时由于腔体内部为真空环境，所以晶圆在下降接触载盘的瞬间过程中不会存在气压差来使晶圆位置发生偏移；在工艺结束后，晶圆升降针先升起后腔体，然后执行充气动作，使腔体充气至大气压状态，避免了腔体充气时晶圆出现偏移的情况。本发明方法在不更换腔体限位环的前提下，实现了两种以上尺寸晶圆的自动传片，避免了由于限位环的频繁更换引起的腔体环境的不断破坏，保证了腔体环境的稳定性。

Description

一种解决多尺寸晶圆传送的工艺方法
技术领域
本发明涉及晶圆传送方法，尤其涉及一种解决多尺寸晶圆传送的工艺方法。
背景技术
在晶圆制造的工艺中，等离子体灰化设备是整个生产工艺中不可或缺的设备，为了降低设备设备采购成本，且同时提升设备的使用率，需要同时满足两种或两种以上晶圆尺寸的加工需求，这就要求两种尺寸的晶圆均可以实现自动传片的需求。
针对该需求，当前常见的做法是采用不同尺寸的限位环来实现对对应尺寸晶圆的限位，从而避免对应尺寸的晶圆在传片过程中出现偏移，影响传片的准确性和稳定性。如果灰化设备作业的是小尺寸晶圆，就会在载晶圆的载盘表面加装小尺寸的限位环a(如图1所示),当机器人在取放小尺寸晶圆时，通过该限位环可以限制晶圆在取放片过程中发生偏移，进而确保传片的稳定性。
当设备作业的是大尺寸晶圆时，就需要将小尺寸晶圆限位环更换为大尺寸晶圆限位环b(如图2所示)来满足大尺寸晶圆的作业需求。
为了满足多尺寸晶圆的兼容运行，需要不断的切换两种尺寸的晶圆限位环来确保晶圆不发生偏移，这就不可避免的需要不断的打开等离子腔体，但每次的开腔动作都会影响腔体的环境和工艺的稳定性，所以每次更换完限位环都需要对腔体进行season处理，恢复腔体环境的稳定性。
传统的晶圆传送逻辑如图3所示，晶圆容易发生位置偏移的情况有两处：
1、机器人将晶圆放置于升起的晶圆升降针上时，该晶圆是在腔体处于大气压力的条件下降至载盘表面，当晶圆下降至刚接触载盘的瞬间，被挤压的气体由于释放瞬间将对晶圆产生一定的气压差，进而导致晶圆发生偏移。
2、晶圆在工艺结束后，腔体需要充气至大气压，该充气过程容易导致晶圆在载盘表面发生偏移。
虽然通过增加限位环可很好的解决以上问题，但需要根据基于不同尺寸的晶圆更换不同的限位环，影响腔体环境的稳定性。
因此，若能够在不开腔的条件下，实现多种晶圆尺寸的自动传片有着重大的意义。故，研发一种解决多尺寸晶圆传送的工艺方法，成为本领域技术人员亟待解决的问题。
发明内容
本发明是为了解决上述不足，提供了一种解决多尺寸晶圆传送的工艺方法。
本发明的上述目的通过以下的技术方案来实现：一种解决多尺寸晶圆传送的工艺方法，包括以下步骤：
S1：机器人开始传片，晶圆传送门开启，机器人将晶圆传至工艺腔体中；
S2：机器人将晶圆放置于晶圆升降针上，晶圆升降针处于升起状态；
S3：待开始真空至腔体压力低于100mT时，晶圆升降针下降，将晶圆放置于载盘表面，此时由于腔体内部为真空环境，所以晶圆在下降接触载盘的瞬间过程中不会存在气压差来使晶圆位置发生偏移；
S4：在工艺结束后，晶圆升降针先升起后腔体，然后执行充气动作，使腔体充气至大气压状态，避免了腔体充气时晶圆出现偏移的情况；
S5：机器人将处于升起状态的晶圆取走，晶圆传送门关闭，运行结束。
本发明与现有技术相比的优点是：本发明方法在不更换腔体限位环的前提下，实现了两种以上尺寸晶圆的自动传片，避免了由于限位环的频繁更换引起的腔体环境的不断破坏，保证了腔体环境的稳定性。
附图说明
图1是传统小尺寸晶圆载盘俯视图。
图2是传统大尺寸晶圆载盘俯视图。
图3是传统的晶圆传送逻辑图。
图4是本发明方法中仅有大尺寸晶圆限位环的载盘俯视图。
图5是本发明的晶圆传送逻辑图。
具体实施方式
下面结合附图对本发明进一步详述。
如图4、图5所示，一种解决多尺寸晶圆传送的工艺方法，包括以下步骤：
S1：机器人开始传片，晶圆传送门开启，机器人将晶圆1传至工艺腔体中；
S2：机器人将晶圆放置于晶圆升降针2上，晶圆升降针2处于升起状态；
S3：待开始真空至腔体压力低于100mT时，晶圆升降针2下降，将晶圆1放置于载盘表面，此时由于腔体内部为真空环境，所以晶圆1在下降接触载盘的瞬间过程中不会存在气压差来使晶圆位置发生偏移；
S4：在工艺结束后，晶圆1升降针先升起后腔体，然后执行充气动作，使腔体充气至大气压状态，避免了腔体充气时晶圆1出现偏移的情况；
S5：机器人将处于升起状态的晶圆1取走，晶圆传送门关闭，运行结束。
本发明方法在不更换腔体限位环3的前提下，实现了两种以上尺寸晶圆1的自动传片，避免了由于限位环3的频繁更换引起的腔体环境的不断破坏，保证了腔体环境的稳定性。且通过该优化后的传送方法，可使放置在载盘表面小尺寸晶圆在没有限位环3的作用下不发生偏移(如图4所示)，保证了传片位置的准确性，这就实现了仅有大尺寸晶圆限位环的条件下，实现了两种或两种以上尺寸的自动兼容运行问题。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (1)

1.一种解决多尺寸晶圆传送的工艺方法，其特征在于：包括以下步骤：
S1：机器人开始传片，晶圆传送门开启，机器人将晶圆传至工艺腔体中；
S2：机器人将晶圆放置于晶圆升降针上，晶圆升降针处于升起状态；
S3：待开始真空至腔体压力低于100mT时，晶圆升降针下降，将晶圆放置于载盘表面，此时由于腔体内部为真空环境，所以晶圆在下降接触载盘的瞬间过程中不会存在气压差来使晶圆位置发生偏移；
S4：在工艺结束后，晶圆升降针先升起后腔体，然后执行充气动作，使腔体充气至大气压状态，避免了腔体充气时晶圆出现偏移的情况；
S5：机器人将处于升起状态的晶圆取走，晶圆传送门关闭，运行结束。
CN202210457239.6A 2022-04-28 2022-04-28 一种解决多尺寸晶圆传送的工艺方法 Pending CN114823446A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209859A (ja) * 2004-01-22 2005-08-04 Matsushita Electric Ind Co Ltd ウェハー搬送処理方法とこれを用いる半導体製造装置
US20070281447A1 (en) * 2006-05-30 2007-12-06 Hyung-Goo Lee Method of loading and/or unloading wafer in semiconductor manufacturing apparatus
KR20090071953A (ko) * 2007-12-28 2009-07-02 주식회사 동부하이텍 반도체 웨이퍼의 정전척 및 이를 이용한 웨이퍼 고정방법
CN107546091A (zh) * 2016-06-28 2018-01-05 瑞萨电子株式会社 半导体器件的制造方法
CN110718491A (zh) * 2018-07-13 2020-01-21 台湾积体电路制造股份有限公司 晶圆处理方法以及晶圆处理模块
CN111599715A (zh) * 2020-04-30 2020-08-28 北京北方华创微电子装备有限公司 晶圆传输控制方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209859A (ja) * 2004-01-22 2005-08-04 Matsushita Electric Ind Co Ltd ウェハー搬送処理方法とこれを用いる半導体製造装置
US20070281447A1 (en) * 2006-05-30 2007-12-06 Hyung-Goo Lee Method of loading and/or unloading wafer in semiconductor manufacturing apparatus
KR20090071953A (ko) * 2007-12-28 2009-07-02 주식회사 동부하이텍 반도체 웨이퍼의 정전척 및 이를 이용한 웨이퍼 고정방법
CN107546091A (zh) * 2016-06-28 2018-01-05 瑞萨电子株式会社 半导体器件的制造方法
CN110718491A (zh) * 2018-07-13 2020-01-21 台湾积体电路制造股份有限公司 晶圆处理方法以及晶圆处理模块
CN111599715A (zh) * 2020-04-30 2020-08-28 北京北方华创微电子装备有限公司 晶圆传输控制方法

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