CN114794575A - 陶瓷基体、陶瓷发热体以及电子雾化装置 - Google Patents

陶瓷基体、陶瓷发热体以及电子雾化装置 Download PDF

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CN114794575A
CN114794575A CN202111630051.9A CN202111630051A CN114794575A CN 114794575 A CN114794575 A CN 114794575A CN 202111630051 A CN202111630051 A CN 202111630051A CN 114794575 A CN114794575 A CN 114794575A
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ceramic
ceramic substrate
heating element
substrate
thermal conductivity
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陈智超
傅显钧
蒋玥
向绍斌
蒋金峰
黎海华
谢建声
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Shenzhen Smoore Technology Ltd
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Shenzhen Smoore Technology Ltd
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Abstract

本发明涉及一种陶瓷基体、陶瓷发热体以及电子雾化装置。所述陶瓷基体的厚度为1～4mm，热导率为0.8‑2.5W/m·k。本发明通过选择特定的厚度和热导率，使得发热体产生的热量能够在陶瓷基体中有效地传导，提高陶瓷基体远离发热体一侧的温度(可以达到80℃或以上)，使高粘度气溶胶生成基质具有良好的流动性。通过厚度以及热导率两者之间的协同配合解决了高粘度气溶胶生成基质的导油速率较慢，容易出现供油不足的问题，同时烟雾量也可以达到4.5mg/puff以上。

Description

陶瓷基体、陶瓷发热体以及电子雾化装置
优先权
本申请要求于2021年01月27日向中国国家知识产权局提交的申请号为PCT/CN2021/073998、发明名称为“陶瓷基体及其制备方法、陶瓷发热体及电子雾化装置”的优先权，并在此对其内容进行交叉引用。
技术领域
本发明涉及电子烟技术领域，具体涉及一种陶瓷基体、陶瓷发热体以及电子雾化装置。
背景技术
雾化器是一种将气溶胶生成基质雾化成气溶胶的装置，其被广泛应用于医疗设备和电子雾化装置。目前，雾化器一般采用棉芯、纤维绳或陶瓷发热体对气溶胶生成基质进行雾化，其中应用最广的是多孔陶瓷发热体。
烟油用多孔陶瓷发热体的工作原理主要是利用多孔陶瓷吸附烟油到发热丝，发热丝发热使烟油蒸发，从而产生尼古丁等物质。但是，现有的陶瓷发热体中，陶瓷基体远离发热丝的一面温度较低，使得高粘度气溶胶生成基质的导油速率较慢，导致出现供油不足的现象。
发明内容
因此，本发明要解决的技术问题在于克服现有技术中高粘度气溶胶生成基质导油速率较慢的缺陷，从而提供一种陶瓷基体、陶瓷发热体和电子雾化装置。
为了解决上述技术问题，本发明采用了如下技术方案：
一种陶瓷基体，所述陶瓷基体的厚度为1～4mm，热导率为0.8-2.5W/m·k。
优选地，所述陶瓷基体的厚度为1.5～3mm。
优选地，所述陶瓷基体的热导率为1.0-2.0W/m·k。
优选地，所述陶瓷基体的孔隙率为40～70％，优选为50-60％。
优选地，所述陶瓷基体包括碳化硅、氧化铝及二氧化硅；其中，所述碳化硅的重量百分数的范围为10～70％；所述氧化铝的重量百分数的范围为6～65％；所述二氧化硅的重量百分数的范围为15～50％。
优选地，所述碳化硅的重量百分数的范围为30％-45％；所述氧化铝的重量百分数的范围为40％-55％；所述二氧化硅的重量百分数的范围为15％-20％。
优选地，所述陶瓷基体的孔径为10～35μm。
优选地，所述陶瓷基体为片状结构。
一种陶瓷发热体，包括：
如上所述的陶瓷基体，和
发热体，设置在陶瓷基体上。
优选地，所述陶瓷基体包括吸液面，在发热体工作时，吸液面温度大于等于80℃。
一种电子雾化装置，包括如上所述的陶瓷基体或陶瓷发热体。
本发明通过选择特定的厚度和热导率，使得发热体产生的热量能够在陶瓷基体中有效地传导，提高陶瓷基体远离发热体一侧的温度(可以达到80℃或以上)，使高粘度气溶胶生成基质的粘度降低，以具有良好的流动性。通过厚度和热导率两者之间的协同配合解决了高粘度气溶胶生成基质的导油速率较慢，容易出现供油不足的问题。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是不同气溶胶生成基质粘度随温度的变化曲线图；
图2是陶瓷基体雾化温度为350℃时，陶瓷基体远离发热体的一侧的平均温度随热导率的2D变化图；
图3是烟雾量随陶瓷基体热导率的2D变化图；
图4是不同功率下热导率为1.3W/mk的陶瓷基体远离发热体的一侧的温度随时间的变化曲线图。
具体实施方式
在采用多孔陶瓷发热体的电子雾化装置如电子烟的抽吸过程中，其主要是利用多孔陶瓷吸附烟油到发热体，发热体发热使烟油蒸发，从而产生尼古丁等物质。多孔陶瓷发热体一般包括陶瓷基体和设置于陶瓷基体一侧表面的发热体的表面，陶瓷基体具有相对设置的雾化面和吸液面，其中，吸液面用于吸纳气溶胶生成基质，雾化面用于雾化陶瓷基体上的气溶胶生成基质，发热体设置在为雾化面的陶瓷基体一侧。陶瓷基体吸收烟液，利用毛细作用力将烟液吸收至发热体进行雾化成烟。然而，现有陶瓷基体两侧温度不一样，与发热体接触的一侧温度较高，远离发热体的一侧温度较低，使得高粘度气溶胶生成基质的导油速率较慢，导致出现供油不足的现象。
发明人发现，产生上述现象的原因之一在于陶瓷基体的热导率较低，从而使发热体产生的热量无法有效地在陶瓷基体中传导，进而导致陶瓷基体远离发热体的温度较低，使得高粘度气溶胶生成基质导油不畅，出现导油速率较慢，导致出现供油不足的现象。
如图1所示，图1为不同气溶胶生成基质粘度随温度的变化曲线图。和常规烟油、纯PG(Propylene Glycol，丙二醇)以及纯VG(Vegetable Glycerin，蔬菜甘油)等气溶胶生成基质相比，高粘度气溶胶生成基质其常温下粘度高，流动性较差。因此，在热导率较低的陶瓷基体的情况下，陶瓷基体远离发热体一侧的温度较低，由于气溶胶生成基质粘度较高，极易导致气溶胶生成基质在陶瓷发热体中的导油速率较慢，进而使得抽吸时供液不足。如图1所示，气溶胶生成基质的粘度随着温度的升温快速下降，因此，只要能够提高陶瓷基体远离发热体的一侧的温度，使陶瓷基体两侧均保持较高的温度，即可以降低气溶胶生成基质的粘度，保证导油速率，避免出现供液不足的现象。
陶瓷基体雾化温度为350℃时，陶瓷基体远离发热体的一侧的平均温度随热导率的变化，如图2所示。图2中，所述陶瓷基体包括碳化硅、氧化铝及二氧化硅；其中，所述碳化硅的重量百分数为10～70％；所述氧化铝的重量百分数为6～65％；所述二氧化硅的重量百分数为15～50％，所述陶瓷基体的孔隙率为50～60％。图2中有11条曲线，分别代表11个不同厚度陶瓷基体的热导率-吸液面平均温度曲线，P38表示各个陶瓷基体的厚度。从坐标轴原点向y轴正向的11条曲线顺序分别代表的陶瓷基体厚度是：4mm，3.75mm，3.5mm，3.25mm，3mm，2.75mm，2.5mm，2.25mm，2mm，1.75mm，1.5mm。可以看出，热导率在0.4W/m·k时，陶瓷基体远离发热体的一侧(即吸液面)的平均温度仅为10～60℃，例如，当陶瓷基体厚度为2mm时，陶瓷基体远离发热体的一侧的平均温度为50℃左右。因此，只有控制陶瓷基体的热导率达到一定程度，才可以使陶瓷基体远离发热体一侧的温度达到期望的温度。
此外，如图2所示，同一热导率下不同厚度的陶瓷基体的远离发热体的一侧的温度同样不同。陶瓷基体厚度和热导率共同制约着陶瓷基体远离发热体的一侧的温度。
基于发明人的上述研究，意外地发现，选择陶瓷基体厚度和热导率适当的组合，即可以解决上述技术问题，并由此完成了本发明。
根据本发明的一个方面，提供了一种陶瓷基体，所述陶瓷基体的厚度为1～4mm，热导率为0.8-2.5W/m·k。
本发明通过选择特定的厚度和热导率，使得发热体产生的热量能够在陶瓷基体中有效地传导，提高陶瓷基体远离发热体一侧的温度(可以达到80℃或以上)，从而大幅降低高粘度气溶胶生成基质的粘度，使高粘度气溶胶生成基质具有良好的流动性。通过厚度以及热导率两者之间的协同配合解决了高粘度气溶胶生成基质的导油速率较慢，容易出现供油不足的问题。
所述陶瓷基体的厚度是指：陶瓷基体雾化面与吸液面的垂直距离。所述陶瓷基体的厚度为1～4mm，例如1.2mm、1.5mm、1.8mm、2.1mm、2.4mm、2.7mm、3.0mm、3.3mm、3.6mm、3.9mm或4.0mm。从陶瓷强度以及制备工艺角度考虑，所述陶瓷基体的厚度优选为1.5-3mm。
所述陶瓷基体的热导率为0.8-2.5W/m·k，例如为0.8W/m·k、1.0W/m·k、1.2W/m·k、1.4W/m·k、1.6W/m·k、1.8W/m·k、2W/m·k或2.5W/m·k。如果陶瓷基体的热导率小于0.8W/m·k，则无法使陶瓷基体远离发热体一侧的温度达到期望的温度(80℃或以上)，如果陶瓷基体的热导率大于2.5W/m·k，则烟雾量不满足抽吸要求。从保持一定烟雾量的角度考虑，所述陶瓷基体的热导率为1.0-2.0W/m·k。
需要说明的是，在本发明中，所述热导率的测试方法为：ISO22007-2.2。
烟雾量随陶瓷热导率的变化如图3所示。图3中，所述陶瓷基体包括碳化硅、氧化铝及二氧化硅；其中，所述碳化硅的重量百分数为10～70％；所述氧化铝的重量百分数为6～65％；所述二氧化硅的重量百分数为15～50％，所述陶瓷基体的孔隙率为50～60％。P38表示各个陶瓷基体的厚度。图3中有11条曲线，分别代表11个不同厚度陶瓷基体的热导率-烟雾量曲线，从坐标轴原点向y轴正向的11条曲线顺序分别代表的陶瓷基体厚度是：4mm，3.75mm，3.5mm，3.25mm，3mm，2.75mm，2.5mm，2.25mm，2mm，1.75mm，1.5mm。可以看出，热导率在2.2W/m·k时，平均烟雾量为3.7～5.8mg/puff，例如，当陶瓷基体厚度为2mm时，平均烟雾量为4.7mg/puff。因此，本发明通过选择特定的热导率，还同时实现了高的平均烟雾量，可以达到≥4.5mg/puff，达到了期望的抽吸体验。
需要说明书的是，在本发明中，烟雾量测试方法为：
采用抽烟机，设定抽吸容量为60ml，每一口抽吸3s，停30s。实验开始前，用天平称取烟弹重量，每抽吸10口后，重新称取烟弹重量，二者差值除以10，得到每口平均烟雾量。
在一种优选地实施方式中，所述陶瓷基体的孔隙率为40-70％，例如为40％、45％、50％、55％、60％、65％或70％，如果孔隙率小于40％，会影响输送烟液至发热体的液体量，可能出现干烧、出现焦味等问题，如果孔隙率大于70％，会影响陶瓷基体的强度，不利于提高雾化芯的使用寿命。从烟液输送和陶瓷基体的强度角度考虑，所述陶瓷基体的孔隙率为50～60％。
需要说明的是，在本发明中，所述孔隙率的测试方法为：《GB/T3810.3-2016陶瓷砖试验方法第3部分：吸水率、显气孔表观相对密度和部分：吸水率、显气孔表观相对密度和容重的测定》
在本发明中，所述高粘度气溶胶生成基质意指：常温(25℃)下，黏度大于10000cps的气溶胶生成基质。
需要说明的是，在本发明中，所述粘度测定方法为：GBT 17473.5-1998厚膜微电子技术用贵金属浆料测试方法粘度测定。
如图4所示，为不同功率下，热导率为1.3W/m·k、厚度为2mm以及孔隙率为57％的长方体片状结构的陶瓷基体的背面温度(即陶瓷基体远离发热体一侧的温度)随时间的变化曲线图。所述陶瓷基体包括碳化硅18wt％、氧化铝43.2wt％及二氧化硅34.9wt％。在高粘度气溶胶生成基质中，当用户抽吸时，不同功率下陶瓷基体的背面温度如图4所示，其中，实线为不同时间所对应的陶瓷基体的背面最高温度，虚线为不同时间所对应的陶瓷基体的背面平均温度；由图4可以看出，在抽吸过程中，陶瓷基体的背面平均温度即可达80℃或以上，80℃可为高粘度气溶胶生成基质提供良好的导油环境，导油速率较佳。
在一种优选地实施方式中，陶瓷基体具有如下组成：所述陶瓷基体包括碳化硅、氧化铝及二氧化硅；其中，所述碳化硅的重量百分数的范围为10～70％；所述氧化铝的重量百分数的范围为6～65％；所述二氧化硅的重量百分数的范围为15～50％。在另一优选地实施方式中，所述碳化硅的重量百分数的范围为30％-45％；所述氧化铝的重量百分数的范围为40％-55％；所述二氧化硅的重量百分数的范围为15％-20％。在另一优选地实施方式中，所述陶瓷基体还包括添加剂，所述添加剂的重量百分数的范围为0-10％，所述添加剂例如为增强剂和粘结剂等。
在一种优选地实施方式中，所述陶瓷基体的制备方法包括：
获取重量百分数的范围为10～70％的碳化硅粉体、重量百分数的范围为6～65％的氧化铝粉体和重量百分数的范围为15～50％的二氧化硅粉体并混合。具体的，分别称取重量百分数为10～70％的碳化硅粉体、重量百分数为6～65％的氧化铝粉体和重量百分数为15～50％的二氧化硅粉体于同一容器中；然后在容器中加入水并进行搅拌，以将水与碳化硅、氧化铝、二氧化硅粉体混合；其中，混合搅拌时间可为15-30分钟；优选地，可为20-25分钟。优选地，碳化硅粉体的重量百分数的范围可为30％-45％；氧化铝粉体的重量百分数的范围可为40％-55％；二氧化硅粉体的重量百分数的范围可为15％-20％。
对混合后的粉体进行压制并成型，以获得陶瓷生坯。在具体实施例中，可先将混合后的粉体放入干燥箱等设备中进行干燥；然后采用喷雾、搅拌等方式对干燥后的粉体进行造粒；之后将造粒后的颗粒放入模具中，并在预设压力下采用干压成型机对造粒后的颗粒进行热压、干压成型，以获得陶瓷生坯。其中，预设压力的范围具体可为10-40MPa；模具具体可为用于制备雾化芯的陶瓷发热基体的模具。
在预设温度下对陶瓷生坯进行烧结并冷却，以制得陶瓷基体。具体的，预设温度可为1100-1700℃，保温时间的范围为2-8小时；优选地，预设温度的范围可为1200-1500℃，保温时间的范围可为2-4小时。
在本发明一种优选地实施方式中，所述陶瓷基体为片状结构，所述片状结构可以为长方体、圆形或者椭圆形等片状结构，所述片状结构还可以为平面或者曲面结构。
在本发明一种优选地实施方式中，所述陶瓷基体的孔径为10～35μm。该范围内的孔径，可以保证陶瓷基体的供液量以及供液速度。
根据本发明的另外一个方面，提供了一种陶瓷发热体，包括：
如上所述的陶瓷基体，和
发热体，设置在陶瓷基体上。
所述陶瓷发热体用于在通电时加热并雾化高粘度的气溶胶生成基质，所述发热体用于在通电时产生热量，所述陶瓷基体对所述发热体产生的热量进行导热。
优选地，所述陶瓷基体包括吸液面，在发热体工作时，吸液面温度大于等于80℃。所述吸液面为陶瓷基体远离发热体一侧。
具体地，陶瓷基体具有相对设置的雾化面和吸液面，其中，吸液面用于吸纳气溶胶生成基质，雾化面用于雾化陶瓷基体上的气溶胶生成基质，发热体设置在为雾化面的陶瓷基体一侧。典型但非限制性的发热体例如为金属发热丝。所述陶瓷发热体包括如上所述的陶瓷基体，其可以实现相同或相似的技术效果，在此不再赘述。
根据本发明的另外一个方面，提供一种电子雾化装置，包括如上所述的陶瓷基体或陶瓷发热体。所述电子雾化装置包括如上所述的陶瓷基体，其可以实现相同或相似的技术效果，在此不再赘述。该电子雾化装置例如为电子烟。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。

Claims (11)

1.一种陶瓷基体，所述陶瓷基体的厚度为1～4mm，热导率为0.8-2.5W/m·k。
2.如权利要求1所述的陶瓷基体，其特征在于，所述陶瓷基体的厚度为1.5-3mm。
3.如权利要求1所述的陶瓷基体，其特征在于，所述陶瓷基体的热导率为1.0-2.0W/m·k。
4.如权利要求1所述的陶瓷基体，其特征在于，所述陶瓷基体的孔隙率为40～70％，优选为50-60％。
5.如权利要求1所述的陶瓷基体，其特征在于，所述陶瓷基体包括碳化硅、氧化铝及二氧化硅；其中，所述碳化硅的重量百分数的范围为10～70％；所述氧化铝的重量百分数的范围为6～65％；所述二氧化硅的重量百分数的范围为15～50％。
6.如权利要求5所述的陶瓷基体，其特征在于，所述碳化硅的重量百分数的范围为30％-45％；所述氧化铝的重量百分数的范围为40％-55％；所述二氧化硅的重量百分数的范围为15％-20％。
7.如权利要求1或2所述的陶瓷基体，其特征在于，所述陶瓷基体的孔径为10～35μm。
8.如权利要求1或2所述的陶瓷基体，其特征在于，所述陶瓷基体为片状结构。
9.一种陶瓷发热体，包括：
如权利要求1-8之一所述的陶瓷基体，和
发热体，设置在陶瓷基体上。
10.如权利要求9所述的陶瓷发热体，其特征在于，所述陶瓷基体包括吸液面，在发热体工作时，吸液面温度大于等于80℃。
11.一种电子雾化装置，包括如权利要求1-8之一所述的陶瓷基体或权利要求9或10所述的陶瓷发热体。
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