CN114730806A - 一种薄膜晶体管的制作方法 - Google Patents

一种薄膜晶体管的制作方法 Download PDF

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Publication number
CN114730806A
CN114730806A CN201980102395.7A CN201980102395A CN114730806A CN 114730806 A CN114730806 A CN 114730806A CN 201980102395 A CN201980102395 A CN 201980102395A CN 114730806 A CN114730806 A CN 114730806A
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China
Prior art keywords
insulating layer
region
lightly doped
active layer
thin film
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Pending
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CN201980102395.7A
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English (en)
Inventor
李民
徐苗
庞佳威
张伟
王磊
邹建华
陶洪
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Guangzhou New Vision Opto Electronic Technology Co ltd
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Guangzhou New Vision Opto Electronic Technology Co ltd
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Application filed by Guangzhou New Vision Opto Electronic Technology Co ltd filed Critical Guangzhou New Vision Opto Electronic Technology Co ltd
Publication of CN114730806A publication Critical patent/CN114730806A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管的制作方法，包括：提供衬底基板(100)；在所述衬底基板(100)上形成图形化的有源层(200)；在所述有源层(200)的中间区(210)上形成栅极绝缘层(300)；在所述栅极绝缘层(300)上形成栅极(400)；采用PECVD工艺在所述衬底基板(100)、所述有源层(200)、所述栅极绝缘层(300)以及所述栅极(400)上形成第一绝缘层(500)；形成源极(600)和所述漏极(700)，所述源极(600)与源极区(220)电连接，所述漏极(700)与漏极区(230)电连接。通过控制位于栅极(400)相对两侧的栅极绝缘层(300)的长度实现轻掺杂区和重掺杂区的比例调节，便捷的改变薄膜晶体管的阈值电压，降低薄膜晶体管的阈值电压的调节难度，且实现了阈值电压便于调节的薄膜晶体管的低难度制备。

Description

PCT国内申请，说明书已公开。

Claims (9)

  1. PCT国内申请，权利要求书已公开。
CN201980102395.7A 2019-12-31 2019-12-31 一种薄膜晶体管的制作方法 Pending CN114730806A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/130375 WO2021134422A1 (zh) 2019-12-31 2019-12-31 一种薄膜晶体管的制作方法

Publications (1)

Publication Number Publication Date
CN114730806A true CN114730806A (zh) 2022-07-08

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CN201980102395.7A Pending CN114730806A (zh) 2019-12-31 2019-12-31 一种薄膜晶体管的制作方法

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CN (1) CN114730806A (zh)
WO (1) WO2021134422A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114141865B (zh) * 2021-11-18 2024-01-09 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法、移动终端

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100557512C (zh) * 2004-12-14 2009-11-04 中华映管股份有限公司 薄膜晶体管及其制造方法
CN104779167A (zh) * 2015-04-09 2015-07-15 京东方科技集团股份有限公司 多晶硅薄膜晶体管及其制备方法、阵列基板、显示面板
CN104916584A (zh) * 2015-04-30 2015-09-16 京东方科技集团股份有限公司 一种制作方法、阵列基板及显示装置
CN105789325B (zh) * 2016-04-18 2019-05-03 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制备方法及cmos器件
CN110098261A (zh) * 2019-05-05 2019-08-06 华南理工大学 一种薄膜晶体管及其制作方法、显示基板、面板、装置

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