CN114556533A - 二极管及其制备方法、接收芯片、测距装置、可移动平台 - Google Patents
二极管及其制备方法、接收芯片、测距装置、可移动平台 Download PDFInfo
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- CN114556533A CN114556533A CN202080014793.6A CN202080014793A CN114556533A CN 114556533 A CN114556533 A CN 114556533A CN 202080014793 A CN202080014793 A CN 202080014793A CN 114556533 A CN114556533 A CN 114556533A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
本申请提供了一种雪崩光电二极管及其制备方法、接收芯片、测距装置、可移动平台。所述制备方法包括：提供形成有外延层的衬底；对所述外延层进行第一掺杂类型的第一离子注入，以形成第一掺杂层，其中，所述第一离子注入的峰值浓度的深度为大于或等于2μm，所述第一离子注入的剂量为1×1012cm‑3～3×1012cm‑3；对所述外延层进行第二掺杂类型的第二离子注入，以形成第二掺杂层，所述第二掺杂层位于所述第一掺杂层的上方；其中，所述第一掺杂类型和所述第二掺杂类型不同，所述第一掺杂层和所述第二掺杂层以及所述第一掺杂层和所述第二掺杂层之间的区域构成所述雪崩光电二极管的雪崩区。
Description
PCT国内申请，说明书已公开。
Claims (41)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/118170 WO2022061831A1 (zh) | 2020-09-27 | 2020-09-27 | 二极管及其制备方法、接收芯片、测距装置、可移动平台 |
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| Publication Number | Publication Date |
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| CN114556533A true CN114556533A (zh) | 2022-05-27 |
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| CN202080014793.6A Pending CN114556533A (zh) | 2020-09-27 | 2020-09-27 | 二极管及其制备方法、接收芯片、测距装置、可移动平台 |
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| CN (1) | CN114556533A (zh) |
| WO (1) | WO2022061831A1 (zh) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980058393A (ko) * | 1996-12-30 | 1998-10-07 | 김영환 | 애벌런치 포토 다이오드 및 그의 제조방법 |
| CN102013427B (zh) * | 2009-09-07 | 2013-03-06 | 上海宏力半导体制造有限公司 | 雪崩击穿二极管结构及制造方法 |
| CN103227231A (zh) * | 2013-04-19 | 2013-07-31 | 中国科学院半导体研究所 | 一种平面型雪崩光电探测器 |
| CN105842706B (zh) * | 2015-01-14 | 2019-02-22 | 上海丽恒光微电子科技有限公司 | 激光三维成像装置及其制造方法 |
| US10103285B1 (en) * | 2017-04-13 | 2018-10-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method of manufacturing the same |
| CN110676333B (zh) * | 2019-10-10 | 2021-05-11 | 中国电子科技集团公司第四十四研究所 | 一种单光子Si-APD探测器及其制造方法 |
| CN111668210A (zh) * | 2020-06-18 | 2020-09-15 | 上海韦尔半导体股份有限公司 | 一种单向高电压瞬态电压抑制保护器件及其制备方法 |
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2020
- 2020-09-27 CN CN202080014793.6A patent/CN114556533A/zh active Pending
- 2020-09-27 WO PCT/CN2020/118170 patent/WO2022061831A1/zh active Application Filing
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| WO2022061831A1 (zh) | 2022-03-31 |
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