CN114520270A - 一种间接带隙半导体光电探测器件及其制作方法 - Google Patents

一种间接带隙半导体光电探测器件及其制作方法 Download PDF

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CN114520270A
CN114520270A CN202011305577.5A CN202011305577A CN114520270A CN 114520270 A CN114520270 A CN 114520270A CN 202011305577 A CN202011305577 A CN 202011305577A CN 114520270 A CN114520270 A CN 114520270A
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张耀辉
莫海锋
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Abstract

本发明公开了一种间接带隙半导体光电探测器件及其制作方法。所述光电探测器器件包括间隙带隙半导体形成的N型衬底、间隙带隙半导体形成的掺杂区域和间隙带隙半导体形成的P型区域，掺杂区域位于N型衬底和P型区域之间，且掺杂区域形成位于价带和导带之间的杂带。本发明降低工作电压，提高增益和效率，在3V工作电压时增益和APD在30V电压下的增益相当，并把附加噪声系数降低到APD的2％左右。

Description

一种间接带隙半导体光电探测器件及其制作方法
技术领域
本发明属于光电探测器技术领域，具体涉及一种降低工作电压、提高增益和效率的间接带隙半导体光电探测器件及其制作方法。
背景技术
传统光电探测器(APD)器件，如雪崩光电二极管(avalanche photodiode)器件的结构如图1所示，从下往上依次包括重掺杂的N型区域11、轻掺杂的P型区域12及重掺杂的P型区域13。
图2是间接带隙半导体能带的示意图，其中，标号21是导带的L能谷，标号22是导带的γ能谷，标号23是价带顶，标号24的箭头表示间接跃迁，标号25的箭头表示直接跃迁。标号23和标号21之间的能量差是间接带隙半导体的禁带宽度Eg。对于价带顶23的电子，只有获得了超过禁带宽度Eg的能量才能跃迁到导带，但由于需要遵守动量守恒，只能发生图2中标号25所示的直接跃迁，而不能发生标号24所示的间接跃迁，APD基于此原理，通过反向偏置的PN结高压强电场作用，让电子能够获得足够的能量，实现直接跃迁。
传统光电探测器(APD)器件，通过施加高的反向偏置电压，利用碰撞电离实现放大，获取高增益。传统APD器件的工作电压较高，通常高于30伏特，使得器件工作效率低；更重要的是，附加噪声会随着放大倍数的增加快速增加。
如何提供一种降低工作电压，提高增益、效率和附加噪声系数的光电探测器件，是一个急需解决的问题。
发明内容
本发明的主要目的在于提供一种间接带隙半导体光电探测器件，从而克服现有技术的不足。
本发明的另一目的在于提供一种间接带隙半导体光电探测器件的制作方法。
为实现前述发明目的，本发明采用的技术方案包括：一种间接带隙半导体光电探测器件，所述光电探测器器件包括间隙带隙半导体形成的N型衬底、间隙带隙半导体形成的掺杂区域和间隙带隙半导体形成的P型区域，所述掺杂区域位于所述N型衬底和P型区域之间，且所述掺杂区域形成位于价带和导带之间的杂带。
在一优选实施例中，所述掺杂区域为与所述N型衬底材料相同的掺杂区域。
在一优选实施例中，所述掺杂区域的掺杂浓度位于1E18cm2～1E20cm2之间。
在一优选实施例中，所述掺杂区域的厚度位于0.1μm～0.5μm之间。
在一优选实施例中，所述P型区域为掺杂了N型衬底材料的P型区域。
在一优选实施例中，所述P型区域的掺杂浓度比N型衬底的掺杂浓度高2％～10％，且所述P型区域的掺杂浓度位于1E18cm2～1E20cm2之间。
在一优选实施例中，所述P型区域的厚度位于0.1μm～0.5μm之间。
在一优选实施例中，所述光电探测器器件还包括P型接触区域，所述P型区域位于掺杂区域和P型接触区域之间。
本发明实施例提供了一种间接带隙半导体光电探测器件的制作方法，所述方法包括：采用间隙带隙半导体形成N型衬底和P型区域，且在间隙带隙半导体掺杂形成掺杂区域，所述掺杂区域位于所述N型衬底和P型区域之间，且所述掺杂区域形成位于价带和导带之间的杂带。
在一优选实施例中，所述方法还包括：采用间隙带隙半导体形成P型接触区域，所述P型区域位于掺杂区域和P型接触区域之间。
与现有技术相比较，本发明的有益效果至少在于：本发明通过在间接带隙半导体中掺杂杂质，以在禁带中靠近导带底区域形成杂带，通过对PN结二极管施加反向的偏置电压，实现高增益的光电探测，且降低工作电压，提高增益和效率，在3V工作电压时增益和APD在30V电压下的增益相当，并把附加噪声系数降低到APD的2％左右。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有雪崩光电二极管的结构示意图；
图2是传统间接带隙半导体的能带示意图；
图3是本发明一实施方式中光电探测器件的结构示意图；
图4是本发明间接带隙半导体的能带示意图。
具体实施方式
通过应连同所附图式一起阅读的以下具体实施方式将更完整地理解本发明。本文中揭示本发明的详细实施例；然而，应理解，所揭示的实施例仅具本发明的示范性，本发明可以各种形式来体现。因此，本文中所揭示的特定功能细节不应解释为具有限制性，而是仅解释为权利要求书的基础且解释为用于教示所属领域的技术人员在事实上任何适当详细实施例中以不同方式采用本发明的代表性基础。
如图3所示，本发明实施例所揭示的一种间接带隙半导体光电探测器件，包括由间隙带隙半导体形成的且由下往上依次设置的N型衬底31、掺杂区域32、P型区域33和P型接触区域34，其中，N型衬底31为重掺杂的N型衬底，其电阻率介于0.001Ω.cm～0.05Ω.cm之间。
掺杂区域32是和N型衬底31相同材料的轻掺杂区域，掺杂浓度介于1E18cm2～1E20cm2之间，厚度介于0.1μm～0.5μm之间。
P型区域33是掺杂了N型衬底31材料的P型区域，即补偿的P型区域，P型区域33的掺杂浓度比N型衬底31的掺杂浓度高2％～10％，介于1E18cm2～1E20cm2之间，厚度介于0.1μm～0.5μm之间。
P型接触区域34和N型衬底31上各自设置有电极，分别是P型接触区域的电极35和N型衬底的电极36。
微观粒子具有波粒二象性，自由粒子的运动可以使用频率为υ、波长为λ的平面波表示，即
Figure BDA0002788230440000031
其中A为常数，r是空间某点的矢径，k是平面波的波数，等于波长λ的倒数，为了同时描述平面波的方向，通常规定k是矢量，成为波数矢量，简称波矢，有波矢k组成的空间称为K空间。在晶体的周期势场中，通常用Bloch波描述离子在周期势场的运动。
本发明光电探测器件的关键之处在于在间接带隙半导体中掺杂，根据安德森局域化理论，所掺杂的杂质在导带下方、价带上方，即在价带和导带之间，形成非晶态的杂带，根据测不准原理，局域化的ΔK很大，使得杂带扩展至K空间原点。补偿间接带隙半导体，杂质导致其周期性结构破坏，电子的Bloch函数需要修正，在安德森局域，波函数无平移对称性，不再是描述电子态的好量子数。根据测不准原理，局域化的ΔK很大，从而杂质的能带在K方向扩展，在导带下方形成非晶态的杂带，杂带扩展至K空间原点。
图4是本发明间接带隙半导体的能带示意图，图中，标号41是导带最低的能谷，标号42是导带能谷，其波矢K和价带的最高能级相同，标号43是价带的最高能级，标号44是进行N型衬底掺杂以后，根据安德森局域化理论，扩展的杂带，标号45是电子获得能量后直接跃迁到杂带的过程，标号46表示电子获得能量从杂带跃迁到导带最低能级的过程。本发明的光电探测器件，通过在间接带隙半导体中掺杂杂质，在禁带中靠近导带底区域形成杂带，使得价带电子获得能量后，直接跃迁至杂带，杂带电子获得能量后，跃迁至导带。从价带跃迁到杂带是直接跃迁过程，电子获得的能量只需要大于杂带和价带的能量差，就能直接跃迁到杂带。同样，杂带中的电子，只需要获得的能量大于杂带和导带的能级差，即可从杂带跃迁到导带。本发明光电探测器件通过对PN结二极管施加反向的偏置电压，实现高增益的光电探测，且在3V的低电压压下就能够获得远远优于APD的增益。
本发明实施例所揭示的一种间接带隙半导体光电探测器件的制作方法，包括：采用间隙带隙半导体形成N型衬底31、P型区域33和P型接触区域34，且在间隙带隙半导体掺杂形成掺杂区域32，掺杂区域32位于N型衬底31和P型区域33之间，且掺杂区域32形成位于价带和导带之间的杂带，P型区域33位于掺杂区域32和P型接触区域34之间。
本发明的各方面、实施例、特征及实例应视为在所有方面为说明性的且不打算限制本发明，本发明的范围仅由权利要求书界定。在不背离所主张的本发明的精神及范围的情况下，所属领域的技术人员将明了其它实施例、修改及使用。
在本发明案中标题及章节的使用不意味着限制本发明；每一章节可应用于本发明的任何方面、实施例或特征。
除非另外具体陈述，否则术语“包含(include、includes、including)”、“具有(have、has或having)”的使用通常应理解为开放式的且不具限制性。
应理解，各步骤的次序或执行特定动作的次序并非十分重要，只要本发明教示保持可操作即可。此外，可同时进行两个或两个以上步骤或动作。
尽管已参考说明性实施例描述了本发明，但所属领域的技术人员将理解，在不背离本发明的精神及范围的情况下可做出各种其它改变、省略及/或添加且可用实质等效物替代所述实施例的元件。另外，可在不背离本发明的范围的情况下做出许多修改以使特定情形或材料适应本发明的教示。因此，本文并不打算将本发明限制于用于执行本发明的所揭示特定实施例，而是打算使本发明将包含归属于所附权利要求书的范围内的所有实施例。此外，除非具体陈述，否则术语第一、第二等的任何使用不表示任何次序或重要性，而是使用术语第一、第二等来区分一个元素与另一元素。

Claims (10)

1.一种间接带隙半导体光电探测器件，其特征在于，所述光电探测器器件包括间隙带隙半导体形成的N型衬底、间隙带隙半导体形成的掺杂区域和间隙带隙半导体形成的P型区域，所述掺杂区域位于所述N型衬底和P型区域之间，且所述掺杂区域形成位于价带和导带之间的杂带。
2.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述掺杂区域为与所述N型衬底材料相同的掺杂区域。
3.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述掺杂区域的掺杂浓度位于1E18cm2～1E20cm2之间。
4.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述掺杂区域的厚度位于0.1μm～0.5μm之间。
5.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述P型区域为掺杂了N型衬底材料的P型区域。
6.根据权利要求5所述的一种间接带隙半导体光电探测器件，其特征在于，所述P型区域的掺杂浓度比N型衬底的掺杂浓度高2％～10％，且所述P型区域的掺杂浓度位于1E18cm2～1E20cm2之间。
7.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述P型区域的厚度位于0.1μm～0.5μm之间。
8.根据权利要求1所述的一种间接带隙半导体光电探测器件，其特征在于，所述光电探测器器件还包括P型接触区域，所述P型区域位于掺杂区域和P型接触区域之间。
9.一种间接带隙半导体光电探测器件的制作方法，其特征在于，所述方法包括：采用间隙带隙半导体形成N型衬底和P型区域，且在间隙带隙半导体掺杂形成掺杂区域，所述掺杂区域位于所述N型衬底和P型区域之间，且所述掺杂区域形成位于价带和导带之间的杂带。
10.根据权利要求9所述的制作方法，其特征在于，所述方法还包括：采用间隙带隙半导体形成P型接触区域，所述P型区域位于掺杂区域和P型接触区域之间。
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