CN114514616A - 氮化物半导体结构体、氮化物半导体器件以及用于制作该器件的方法 - Google Patents

氮化物半导体结构体、氮化物半导体器件以及用于制作该器件的方法 Download PDF

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CN114514616A
CN114514616A CN202080070160.7A CN202080070160A CN114514616A CN 114514616 A CN114514616 A CN 114514616A CN 202080070160 A CN202080070160 A CN 202080070160A CN 114514616 A CN114514616 A CN 114514616A
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nitride semiconductor
crystal
group
group iii
plane
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泷泽俊幸
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Panasonic Intellectual Property Management Co Ltd
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  • Physics & Mathematics (AREA)
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  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202080070160.7A 2019-10-09 2020-10-08 氮化物半导体结构体、氮化物半导体器件以及用于制作该器件的方法 Pending CN114514616A (zh)

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PCT/JP2020/038155 WO2021070910A1 (ja) 2019-10-09 2020-10-08 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法

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JP7718026B2 (ja) * 2021-08-30 2025-08-05 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US12463033B2 (en) 2022-10-19 2025-11-04 Kyocera Corporation Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US20050258451A1 (en) * 2004-05-20 2005-11-24 Saxler Adam W Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions
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