JP7212173B2 - 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法 - Google Patents

窒化物半導体構造体、窒化物半導体デバイス及びその製造方法 Download PDF

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JP7212173B2
JP7212173B2 JP2021551704A JP2021551704A JP7212173B2 JP 7212173 B2 JP7212173 B2 JP 7212173B2 JP 2021551704 A JP2021551704 A JP 2021551704A JP 2021551704 A JP2021551704 A JP 2021551704A JP 7212173 B2 JP7212173 B2 JP 7212173B2
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nitride semiconductor
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crystal
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group iii
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俊幸 瀧澤
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Panasonic Intellectual Property Management Co Ltd
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  • Engineering & Computer Science (AREA)
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  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021551704A 2019-10-09 2020-10-08 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法 Active JP7212173B2 (ja)

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US12463033B2 (en) 2022-10-19 2025-11-04 Kyocera Corporation Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate

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