CN114434894A - 铜箔石墨膜及其制备方法 - Google Patents
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 239000011889 copper foil Substances 0.000 title claims abstract description 77
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 68
- 239000010439 graphite Substances 0.000 title claims abstract description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000003763 carbonization Methods 0.000 claims description 5
- 238000005087 graphitization Methods 0.000 claims description 5
- 238000003490 calendering Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 4
- 229910021383 artificial graphite Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
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Abstract
本发明公开了一种铜箔石墨膜及其制备方法,该制备方法包括步骤:(1)提供铜箔基板,且于所述铜箔基板一侧贴附干膜;(2)对所述干膜进行曝光工艺;(3)进行显影工艺,曝光部分露出所述铜箔基板,未曝光部分被所述干膜覆盖;(4)在曝光部分露出的所述铜箔基板表面沉积金属形成铜柱;(5)将所述干膜退去;(6)将半成品石墨膜与所述铜箔基板含所述铜柱一侧进行压合,得到铜箔石墨膜。该方法制得的铜箔石墨膜能够提高其厚度方向(即Z轴方向)的热传导率,且几乎不影响水平方向(即X轴和Y轴方向)的热传导率,且该铜箔石墨膜具有较好的机械性能、稳定性和承载性。
Description
技术领域
本发明涉及石墨膜技术领域,更具体地涉及一种铜箔石墨膜及其制备方法。
背景技术
目前,一般现有的石墨散热片的制造方法,其先将PI(Polyimide)膜(聚酰亚胺膜)送入一碳化炉中,以1100℃-1300℃的加热温度,对该PI膜进行加热碳化,令该PI膜碳化后形成PI碳化片;接着,再将该PI碳化片冷却,冷却至室温后,再将该PI碳化片送入石墨化炉中,以2800℃-3000℃的加热温度,对该PI碳化片进行加热石墨化,使该PI碳化片石墨化后形成PI石墨散热片;之后,再将该PI石墨散热片冷却,冷却至室温后,以一压延装置压延其厚度,使该PI石墨散热片经压延后,形成厚度15-30μm得石墨散热片成品,也称人造石墨膜。
该石墨散热片的制造方法制造的人造石墨散热片,在水平方向(即X轴和Y轴方向)的热传导率可高达1600W/(m·k),但厚度方向(即Z轴方向)的热传导率低于5W/(m·k),严重偏低。
随着通讯和新能源行业的发展,尤其是5G技术、自动驾驶及电动车的日益盛行,随着电子产品功率不断增加,产品越做越薄,电子仪器及设备朝轻、薄、短、小、复合式等发面发展。在高频工作频率下,电子元件产生的热量迅速积累、增加,日益显现出热量无法及时发散的技术问题。在该情形下,提高人造石墨散热片厚度方向(即Z轴方向)的热传导率势在必行。
因此,有必要提供一种铜箔石墨膜及其制备方法以解决上述现有技术的不足。
发明内容
为了克服现有技术的缺陷,本发明的目的是提供一种铜箔石墨膜的制备方法,该方法制得的铜箔石墨膜能够提高其厚度方向(即Z轴方向)的热传导率,且几乎不影响水平方向(即X轴和Y轴方向)的热传导率,且该铜箔石墨膜具有较好的机械性能、稳定性和承载性。
为了实现上述目的,本发明公开了一种铜箔石墨膜的制备方法,包括步骤:
(1)提供铜箔基板,且于所述铜箔基板一侧贴附干膜;
(2)对所述干膜进行曝光工艺;
(3)进行显影工艺,曝光部分露出所述铜箔基板,未曝光部分被所述干膜覆盖;
(4)进行电镀工艺,在曝光部分露出的所述铜箔基板表面沉积金属形成铜柱;
(5)将所述干膜退去;
(6)将半成品石墨膜与所述铜箔基板含所述铜柱一侧进行压合,得到铜箔石墨膜。
相应地,本发明还提供一种铜箔石墨膜,采用上述制备方法制得。
与现有技术相比,本申请的铜箔石墨膜的制备方法,通过曝光工艺及显影工艺,使得曝光部分露出铜箔基板,未曝光部分被干膜覆盖,在电镀的时候,由于干膜覆盖未曝光部分,不会沉积金属层,而在露出的铜箔基板表面沉积金属层,得到与铜箔基板垂直的铜柱,退去干膜后,将半成品石墨膜从铜柱一侧与铜箔基板进行压合,将铜柱嵌入半成品石墨膜中,得到铜箔石墨膜,由于在铜箔石墨膜的厚度方向(即Z轴方向)具有若干铜柱,可快速地将热量经厚度方向(即Z轴方向)传导出去,使得该铜箔石墨膜在厚度方向(即Z轴方向)具有良好的散热性能,且几乎不影响水平方向(即X轴和Y轴方向)的热传导率,且由于若干铜柱的支撑,该使得铜箔石墨膜具有较好的机械性能、稳定性和承载性。
附图说明
图1展示本发明铜箔石墨膜的制备工艺。
符号说明:
铜箔基板10,干膜20,铜柱30,半成品石墨膜50,石墨膜部70,铜箔石墨膜100。
具体实施方式
为详细说明本发明的技术内容、构造特征、所实现目的及效果,以下结合实施方式并配合附图详予说明。
请参考图1,展示本发明铜箔石墨膜的制备工艺,具体如下:
S1,提供铜箔基板10;
S2,将干膜20贴附在铜箔基板10表面;
S3,对干膜20进行曝光工艺;
S4,采用显影液进行显影工艺,使得曝光部分露出铜箔基板10,未曝光部分被干膜20覆盖;
S5,采用电镀技术在曝光部分露出的铜箔基板10表面沉积铜层形成铜柱30;
S6,将干膜20退去;
S7,将半成品石墨膜50与铜箔基板10含铜柱30一侧进行压合;
S8,得到铜箔石墨膜100。
请继续参考图1中S8,本发明的铜箔石墨膜100包括铜箔基板10及若干垂直于铜箔基板10的铜柱30,石墨膜部70与铜箔基板10相连且铜柱30嵌入石墨膜部70中,石墨膜部70是半成品石墨膜50压合形成。
在一个优选的技术方案中,先对铜箔基板10进行预处理后,再将干膜20与铜箔基板10贴紧,如清洗等。本实施例中,将干膜20与铜箔基板10贴紧后进行曝光工艺,再采用喷淋技术喷出显影液进行显影,该工艺可以在常温下进行,也可以在大于常温的温度中进行。经过显影工艺后,曝光部分露出铜箔基板10,未曝光部分被干膜20覆盖。其中,显影液可为但不限于碳酸钠。还需要说明的是,曝光工艺和显影工艺可采用PCB板制备常用工艺,在此不进行具体阐述。
在一个优选的技术方案中,通过化学镀、化学沉铜中的任一种方式形成铜柱30,优先采用电镀工艺。铜柱30的高度可根据需要进行设定,比如铜柱30的高度为0.1-50μm,但不限于此。进一步,金属可选自Cu或Cu/Ni合金,也就是说铜柱30可以是纯铜材料,也可以是Cu/Ni合金材料,当然还可以是其它导热金属材料。更进一步,铜柱30的直径为5-300μm,比如,铜柱30的直径可为但不限于5μm、50μm、100μm、150μm、200μm、250μm、300μm。优选地,铜柱30的直径为10-100μm。优选地,两相邻铜柱30之间的距离为10-200μm,比如,两相邻铜柱30之间的距离可为但不限于10μm、50μm、100μm、150μm、200μm。
在一个优选的技术方案中,将PI膜进行加热碳化、石墨化,再进行压延处理得到半成品石墨膜50。对于半成品石墨膜50的厚度可根据需要进行不同程度的压延获得,优选地,半成品石墨膜50的厚度为50-100μm,比如半成品石墨膜50的厚度可为但不限于50μm、60μm、70μm、80μm、90μm、100μm,但不限于此。具体地,将厚度为50-100μm的PI膜送入炭化炉中,升温至1000-1200℃进行加热碳化,冷却后得到碳化膜;将碳化膜送入石墨化炉中,升温至2500℃-3000℃进行石墨化,冷却后得到石墨化膜;再将石墨化膜进行压延处理得到半成品石墨膜50。
在一个优选的技术方案中,在铜箔基板10的铜箔面或铜柱贴附导热双面胶、导热硅胶或导热硅脂。在使用时,将导热双面胶、导热硅胶或导热硅脂在待散热物体上,热量能够快速地从该铜箔石墨膜的厚度方向(即Z轴方向)传导出去。当然,连接方式并不限定与胶粘,还可以采用焊接等方式实现。
在本发明的铜箔石墨膜的制备方法中,通过曝光工艺及显影工艺,使得曝光部分露出铜箔基板10,未曝光部分被干膜20覆盖,在电镀的时候,由于干膜20覆盖未曝光部分,不会沉积铜层,而在露出的铜箔基板10表面沉积铜层,得到与铜箔基板10垂直的铜柱30,退去干膜20后,将半成品石墨膜50从铜柱30一侧与铜箔基板10进行压合,将铜柱30嵌入半成品石墨膜50中,得到铜箔石墨膜100,由于在铜箔石墨膜100的厚度方向(即Z轴方向)具有若干铜柱30,可快速地将热量经厚度方向(即Z轴方向)传导出去,使得该铜箔石墨膜100在厚度方向(即Z轴方向)具有良好的散热性能,且几乎不影响水平方向(即X轴和Y轴方向)的热传导率,且由于若干铜柱30的支撑,该使得铜箔石墨膜100具有较好的机械性能、稳定性和承载性。
以上所揭露的仅为本发明的优选实施例而已,当然不能以此来限定本发明之权利范围,因此依本发明申请专利范围所作的等同变化,仍属本发明所涵盖的范围。
Claims (10)
1.一种铜箔石墨膜的制备方法,其特征在于,包括步骤:
(1)提供铜箔基板,且于所述铜箔基板一侧贴附干膜;
(2)对所述干膜进行曝光工艺;
(3)进行显影工艺,曝光部分露出所述铜箔基板,未曝光部分被所述干膜覆盖;
(4)在曝光部分露出的所述铜箔基板表面沉积金属形成铜柱;
(5)将所述干膜退去;
(6)将半成品石墨膜与所述铜箔基板含所述铜柱一侧进行压合,得到铜箔石墨膜。
2.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,在所述铜箔基板的铜箔面贴附导热双面胶、导热硅胶或导热硅脂。
3.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,所述铜柱的直径为5-300μm。
4.如权利要求3所述的铜箔石墨膜的制备方法,其特征在于,所述铜柱的直径为10-100μm。
5.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,两相邻所述铜柱之间的距离为10-200μm。
6.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,将PI膜进行加热碳化、石墨化,再进行压延处理得到所述半成品石墨膜。
7.如权利要求6所述的铜箔石墨膜的制备方法,其特征在于,将所述PI膜送入炭化炉中,升温至1000-1200℃进行加热碳化,冷却后得到碳化膜;
然后将所述碳化膜送入石墨化炉中,升温至2500℃-3000℃进行石墨化,冷却后得到石墨化膜;
再将所述石墨化膜进行压延处理得到所述半成品石墨膜。
8.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,通过化学镀、化学沉铜中的任一种方式形成所述铜柱。
9.如权利要求1所述的铜箔石墨膜的制备方法,其特征在于,所述金属可选自Cu或Cu/Ni合金。
10.一种铜箔石墨膜,其特征在于,采用如权利要求1-9任一项所述的制备方法制得。
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