CN114197021A - Double-wafer film coating clamp - Google Patents
Double-wafer film coating clamp Download PDFInfo
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- CN114197021A CN114197021A CN202111298590.7A CN202111298590A CN114197021A CN 114197021 A CN114197021 A CN 114197021A CN 202111298590 A CN202111298590 A CN 202111298590A CN 114197021 A CN114197021 A CN 114197021A
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- 239000007888 film coating Substances 0.000 title claims abstract description 28
- 238000009501 film coating Methods 0.000 title claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 229920002379 silicone rubber Polymers 0.000 claims description 47
- 210000002105 tongue Anatomy 0.000 claims description 28
- 239000004945 silicone rubber Substances 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 14
- 229920001971 elastomer Polymers 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 58
- 238000009713 electroplating Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 8
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a double-wafer film coating clamp, which solves the technical problem that the film coating yield of wafers is easily reduced in the conventional wafer film coating clamp. The design idea of a clamp double-wafer is adopted, the outer side surfaces of two clamp plates are respectively provided with a wafer embedding groove and a conductive disc, the wafer subjected to pre-electroplating coating is arranged in the conductive disc, a large-size telescopic conductive pin is arranged between the conductive disc and a conductive plate, and the large-size telescopic conductive pin is abutted to the conductive disc, so that the conductive plate, the large-size telescopic conductive pin and the conductive disc form a power supply electrode for wafer coating; radial bulges are arranged on the inner circle of the clamp cover plate ring at equal intervals along the radial direction, the wafer is limited by the radial bulges, small-sized telescopic conductive needles are arranged in the radial bulges, and the small-sized telescopic conductive needles are abutted on the film coating surface of the wafer to form the other power supply electrode for wafer film coating; the invention has compact integral structure and small clamp volume, and realizes the film coating of two wafers.
Description
Technical Field
The invention relates to a wafer coating clamp, in particular to a double-wafer coating clamp which can simultaneously coat two wafers and can greatly improve the wafer coating yield.
Background
The wafer coating process is the most widely applied process in the semiconductor wet manufacturing process, plays a role in supporting and connecting various packaging devices, and can be divided into two main processes of physical coating and electrochemical deposition coating (ECD); the electrochemical deposition coating is to deposit a specified film material on a wafer substrate material by utilizing different oxidation-reduction reactions of cations and anions under the action of an electric field; the electrochemical deposition coating process has the advantages of low process temperature, good coating binding force, no limitation of the coating solution on the shape of a coated workpiece, easy control of solution components in film formation, simple structure of electroplating equipment and low cost, and is widely adopted by manufacturers; in the electrochemical deposition coating process of the wafer, the wafer is clamped by a clamp and then is put into a plating solution for coating, the coating is carried out on the coating surface of the wafer, and the other surface of the wafer is strictly sealed and cannot be electroplated; the structure of a conductive point on the existing wafer film coating clamp is simple, and the design of the conductive structure is often carried out in a mode of an elastic conductive needle or a metal ring; the tightness of the elastic conductive needle is poor in the electroplating process, so that the replacement frequency of the conductive needle is caused, and if a long-time electroplating process is carried out, the conductive needle is easily bonded with a conductive point of a wafer due to poor tightness of the elastic conductive needle, so that the coating of the wafer is ineffective; in addition, in the clamping process, the elastic conductive pin cannot keep better elasticity to the maximum extent, so that the defect of poor conductivity is caused; for the metal ring conductive structure, a conductive edge of about 3 mm needs to be reserved on the wafer film coating surface for the metal ring to be pressed on the wafer for process conduction, and the part of the wafer pressed by the metal ring cannot be coated, so that the waste of the part of the wafer is caused, and for the wafer with high price, the wafer film coating processing cost is increased.
Disclosure of Invention
The invention provides a double-wafer film coating clamp, which solves the technical problem that the film coating yield of wafers is easily reduced in the conventional wafer film coating clamp.
The invention solves the technical problems by the following technical scheme:
the general concept of the invention is: the design idea of one clamp and double wafers is adopted, a current-conducting plate is hermetically arranged between the inner side surfaces of the two clamp plates, wafer embedding grooves are respectively arranged on the outer side surfaces of the two clamp plates, a current-conducting disc is arranged in the wafer embedding grooves, a pre-electroplated film-coated wafer is arranged in the current-conducting disc, a large-size telescopic current-conducting needle is arranged between the current-conducting disc and the current-conducting plate, and the large-size telescopic current-conducting needle is abutted against the current-conducting disc, so that the current-conducting plate, the large-size telescopic current-conducting needle and the current-conducting disc form a power supply electrode of the wafer film coating; the outer side of the film coating surface of the wafer is provided with an insulated clamp cover plate ring formed by two silica gel sealing rings which are laminated together, a conducting ring is arranged between the two silica gel sealing rings in a sealing mode, radial protrusions are arranged on the inner circle of the clamp cover plate ring along the radial direction at equal intervals, the wafer is limited by the radial protrusions, small-sized telescopic conducting pins are arranged in the radial protrusions, and the small-sized telescopic conducting pins are abutted to the film coating surface of the wafer to form the other power supply electrode for wafer film coating.
A double-wafer film coating clamp comprises a left insulating clamp plate, a right insulating clamp plate, a conductive ring and a wafer, wherein the right vertical surface of the left insulating clamp plate and the left vertical surface of the right insulating clamp plate are connected together in a sealing way after being abutted, the conductive plate is embedded between the right vertical surface of the left insulating clamp plate and the left vertical surface of the right insulating clamp plate in a sealing way, the left vertical surface of the left insulating clamp plate is provided with a left conductive plate embedding groove, the left conductive plate is embedded into the groove, and the left conductive plate is electrically connected with the conductive plate; a wafer is arranged in the left conductive disc, a clamp annular cover ring is arranged on the right vertical surface of the left insulating clamping plate on the outer side of the wafer, tongues protruding inwards from the clamp annular cover ring are arranged on the inner circle of the clamp annular cover ring along the radial direction at equal intervals, a conductive ring is pre-embedded in the clamp annular cover ring, and small-sized telescopic conductive pin screws are arranged on the tongues protruding inwards from the clamp annular cover ring; the telescopic conductive needle screw consists of a screw end and a hollow screw rod, a pressure spring is arranged in a hole of the hollow screw rod, and a telescopic conductive needle is pressed on the pressure spring; the end of the telescopic conductive needle is abutted against the excircle of the film coating surface of the wafer, and the hollow screw rod is electrically connected with the conductive ring.
A large-size telescopic conductive pin screw is arranged between the conductive plate and the left conductive disc embedded groove, and the end head of a telescopic conductive pin in the large-size telescopic conductive pin screw is abutted against the inner side surface of the left conductive disc; a right side conductive disc embedding groove is formed in the right side vertical surface of the right side insulating clamping plate, a right side conductive disc is embedded into the right side conductive disc embedding groove, and the right side conductive disc is electrically connected with the conductive plate; and the right side conductive disc is provided with another wafer, the right side vertical surface of the right side insulating clamping plate on the outer side of the other wafer is provided with another clamp annular cover ring, and the structure of the other clamp annular cover ring is completely the same as that of the clamp annular cover ring.
The clamp annular cover ring is formed by laminating and sealing an outer side silicon rubber ring and an inner side silicon rubber ring, and a conducting ring is embedded between the outer side silicon rubber ring and the inner side silicon rubber ring in a sealing manner; the inner circle of the outer silicon rubber ring is provided with outward silicon rubber ring inward protruding tongues at equal intervals along the radial direction, the outward silicon rubber ring inward protruding tongues are arranged on the outward silicon rubber ring inward protruding tongues at equal intervals along the radial direction, the inward silicon rubber ring inward protruding tongues are arranged on the inward silicon rubber ring inward protruding tongues at equal intervals along the radial direction, the inward silicon rubber ring upward conductive pin penetrating holes are arranged on the inward silicon rubber ring inward protruding tongues, the inward silicon rubber ring inward protruding tongues are arranged on the inner circle of the conductive ring along the radial direction, conductive ring inward protruding tongues are arranged on the inward conductive ring protruding tongues at equal intervals, conductive ring upward conductive pin penetrating screw holes are arranged on the conductive ring, small-sized telescopic conductive pin screws sequentially penetrate through the outward silicon rubber ring upward conductive pin penetrating holes, the conductive ring upward conductive pin penetrating screw holes and the inward silicon rubber ring upward conductive pin penetrating holes along the left-to-right direction, and then small-sized telescopic conductive pin tips on the small-sized telescopic conductive pin screws are arranged on the small-sized telescopic conductive pin screws, the top is connected with the excircle of the film coating surface of the wafer.
The conducting plate is in a T-shaped pendulum shape, and a large-size telescopic conducting needle screw penetrating screw hole is formed in the conducting plate; a T-shaped pendulum-shaped conductive plate embedding groove is formed in the left vertical surface of the right insulating clamping plate, and a screw end embedding groove of a telescopic conductive pin screw is formed in the conductive plate embedding groove; the telescopic conductive needle screw is screwed with a large-size telescopic conductive needle screw in a penetrating screw hole of the telescopic conductive needle screw, the screw end of the large-size telescopic conductive needle screw is embedded into a screw end embedding groove, and a hollow screw of the large-size telescopic conductive needle screw penetrates out of a left side conductive disc embedded groove arranged on a left side vertical face of the left side insulating clamping plate.
The end part of the transverse strip plate at the top end of the T-shaped pendulum-shaped current conducting plate is provided with a conducting screw penetrating screw hole, an electrode introducing U-shaped clamp is clamped between the top end of the left side insulating clamp plate and the top end of the right side insulating clamp plate which are laminated together, and the conducting screw penetrates through the electrode introducing U-shaped clamp and then is screwed together with the conducting screw penetrating screw hole.
A conductive disc fixing screw hole is formed in the left conductive disc, and the left conductive disc is fixed in the left conductive disc embedding groove after a rubber screw penetrates through the conductive disc fixing screw hole; and an electrode introducing hole of the conducting ring is arranged on the left side vertical surface of the outer silicone rubber ring, and a conducting ring electrode introducing screw is arranged in the electrode introducing hole.
The invention has compact integral structure and small clamp volume, can realize the simultaneous film coating of two wafers, can reduce the reserved area of the contact position of the conductive points of the wafers to about 3 mm, greatly improves the utilization rate of the coated wafers, reduces the processing cost, has small vertical distance of electrode introduction of the clamp, and greatly improves the conductivity through the telescopic conductive pin screw; the whole clamp is assembled, is simple to process and is convenient to assemble and disassemble.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a diagram of the mating relationship of the left insulating clamp 1 and the left conductive pad 6 of the present invention;
fig. 3 is a schematic structural diagram of a left conductive plate embedding groove 8 on the left insulating clamp plate 1 of the invention;
fig. 4 is a schematic structural view of a T-pendulum shaped conductive plate fitting groove 9 on the left side elevation of the right insulating splint 2 of the present invention;
fig. 5 is a schematic structural view of the conductive plate 10 of the present invention;
FIG. 6 is a schematic view of the construction of the small size retractable conductor pin screw 26 of the present invention;
FIG. 7 is a schematic view of the structure of the left conductive pad 6 of the present invention;
FIG. 8 is a schematic view of the structure of a wafer 7 according to the present invention;
FIG. 9 is a schematic view of the construction of the clamp annular cover ring 5 of the present invention;
FIG. 10 is a schematic structural view of the outer silicone rubber ring 18 of the present invention;
FIG. 11 is a schematic diagram of a conductive ring 23 according to the present invention.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings:
a double-wafer film coating clamp comprises a left insulating clamp plate 1, a right insulating clamp plate 2, a conductive plate 10, a conductive ring 23 and a wafer 7, wherein the right vertical surface of the left insulating clamp plate 1 and the left vertical surface of the right insulating clamp plate 2 are connected together in a sealing manner after being abutted, the conductive plate 10 is embedded between the right vertical surface of the left insulating clamp plate 1 and the left vertical surface of the right insulating clamp plate 2 in a sealing manner, a left conductive plate embedding groove 8 is formed in the left vertical surface of the left insulating clamp plate 1, a left conductive plate 6 is embedded in the left conductive plate embedding groove 8, and the left conductive plate 6 and the conductive plate 10 are electrically connected together; a wafer 7 is arranged in the left conductive disc 6, a clamp annular cover ring 5 is arranged on the right vertical surface of the left insulating clamp plate 1 outside the wafer 7, inward protruding tongues of the clamp annular cover ring are arranged on the inner circle of the clamp annular cover ring 5 at equal intervals along the radial direction, a conductive ring 23 is pre-embedded in the clamp annular cover ring 5, and small-sized telescopic conductive pin screws 26 are arranged on the inward protruding tongues of the clamp annular cover ring; the telescopic conductive needle screw 26 consists of a screw end 14 and a hollow screw 15, a pressure spring is arranged in a hole of the hollow screw 15, and a telescopic conductive needle 16 is pressed on the pressure spring; the end of the telescopic conductive needle 16 is abutted against the excircle of the film coating surface of the wafer 7, and the hollow screw 15 is electrically connected with the conductive ring 23.
A large-size telescopic conductive pin screw is arranged between the conductive plate 10 and the left conductive disc embedding groove 8, and the end head of a telescopic conductive pin in the large-size telescopic conductive pin screw is abutted against the inner side surface of the left conductive disc 6; a right side conductive disc embedding groove is formed in the right side vertical surface of the right side insulating clamp plate 2, a right side conductive disc is embedded into the right side conductive disc embedding groove, and the right side conductive disc is electrically connected with the conductive plate 10; and the right side conductive disc is provided with another wafer, the right side vertical surface of the right side insulating clamping plate 2 on the outer side of the other wafer is provided with another clamp annular cover ring, and the structure of the other clamp annular cover ring is completely the same as that of the clamp annular cover ring 5.
The clamp annular cover ring 5 is formed by laminating and sealing an outer side silicon rubber ring 18 and an inner side silicon rubber ring 19, and a conducting ring 23 is embedded between the outer side silicon rubber ring 18 and the inner side silicon rubber ring 19 in a sealing manner; on the inner circle of the outer silicone rubber ring 18, there are provided with outer silicone rubber ring inward projecting tongues 20 at equal intervals in the radial direction, on the outer silicone rubber ring inward projecting tongues 20, there are provided outer silicone rubber ring upper conductive pin through holes 21, on the inner circle of the inner silicone rubber ring 19, there are inner silicone rubber ring inward projecting tongues 22 at equal intervals in the radial direction, on the inner silicone rubber ring inward projecting tongues 22, there are inner silicone rubber ring upper conductive pin through holes 23, on the inner circle of the conductive ring 23, there are conductive ring inward projecting tongues 24 at equal intervals in the radial direction, on the conductive ring inward projecting tongues 24, there are provided conductive ring upper conductive pin through screw holes 25, small-sized telescopic conductive pin screws 26, which sequentially pass through the outer silicone rubber ring upper conductive pin through holes 21, the conductive ring upper conductive pin through screw holes 25, and the inner silicone rubber ring upper conductive pin through holes 23 in the left-to-right direction, the end of the retractable conductive pin 16 on the small-sized retractable conductive pin screw 26 is abutted against the outer circle of the film coating surface of the wafer 7.
The conductive plate 10 is in a T-shaped pendulum shape, and a large-size telescopic conductive needle screw penetrating screw hole 13 is formed in the conductive plate 10; a T-shaped pendulum-shaped conductive plate embedding groove 9 is formed in the left vertical surface of the right insulating clamping plate 2, and a screw end embedding groove 12 of a telescopic conductive pin screw is formed in the conductive plate embedding groove 9; a large-size telescopic conductive needle screw is screwed in the telescopic conductive needle screw penetrating screw hole 13, the screw end of the large-size telescopic conductive needle screw is embedded in the screw end embedding groove 12, and a hollow screw of the large-size telescopic conductive needle screw penetrates out of a left conductive disc embedding groove 8 arranged on the left vertical surface of the left insulating clamp plate 1; the lead-in electrode is electrically connected with the non-film-coated surface of the wafer 7 through an electrode lead-in U-shaped card 3, a conductive screw 4, a telescopic conductive pin screw penetrating screw hole 13, a conductive plate 10, a large-size telescopic conductive pin screw and a conductive disc in sequence.
The end part of a horizontal strip plate at the top end of a T-shaped pendulum-shaped conductive plate 10 is provided with a conductive screw penetrating screw hole 11, an electrode introducing U-shaped card 3 is clamped between the top end of a left side insulating clamp plate 1 and the top end of a right side insulating clamp plate 2 which are laminated together, and a conductive screw 4 penetrates through the electrode introducing U-shaped card 3 and then is in threaded connection with the conductive screw penetrating screw hole 11.
A conductive disc fixing screw hole 17 is formed in the left conductive disc 6, and after a rubber screw penetrates through the conductive disc fixing screw hole 17, the left conductive disc 6 is fixed in the left conductive disc embedding groove 8; on the left side elevation of the outer silicone rubber ring 18, an electrode introducing hole 27 of the conductive ring 23 is provided, and a conductive ring electrode introducing screw 28 is provided in the electrode introducing hole 27; the other electrode is electrically connected with the film coating surface of the wafer 7 through a conducting ring electrode lead-in screw 28, a conducting ring 23, a conducting ring upper conducting pin penetrating screw hole 25 arranged on a conducting ring inward protruding tongue 24, a small-sized telescopic conducting pin screw 26 and a telescopic conducting pin 16 in sequence; the improvement of the conductivity of the electroplating film is realized through the telescopic conductive pins on the telescopic conductive pin screws.
Claims (6)
1. A double-wafer coating clamp comprises a left insulating clamp plate (1), a right insulating clamp plate (2), a conducting plate (10), a conducting ring (23) and a wafer (7), and is characterized in that the right vertical surface of the left insulating clamp plate (1) and the left vertical surface of the right insulating clamp plate (2) are connected together in a sealing manner after being abutted, the conducting plate (10) is embedded between the right vertical surface of the left insulating clamp plate (1) and the left vertical surface of the right insulating clamp plate (2) in a sealing manner, a left conducting plate embedding groove (8) is formed in the left vertical surface of the left insulating clamp plate (1), a left conducting plate (6) is embedded into the left conducting plate embedding groove (8), and the left conducting plate (6) is electrically connected with the conducting plate (10); a wafer (7) is arranged in the left conductive disc (6), a clamp annular cover ring (5) is arranged on the right vertical surface of the left insulating clamp plate (1) at the outer side of the wafer (7), inward protruding tongues of the clamp annular cover ring are arranged on the inner circle of the clamp annular cover ring (5) at equal intervals along the radial direction, a conductive ring (23) is pre-embedded in the clamp annular cover ring (5), and small-sized telescopic conductive pin screws (26) are arranged on the inward protruding tongues of the clamp annular cover ring; the telescopic conductive needle screw (26) consists of a screw end (14) and a hollow screw (15), a pressure spring is arranged in a hole of the hollow screw (15), and a telescopic conductive needle (16) is pressed on the pressure spring; the end of the telescopic conductive needle (16) is connected with the outer circle of the film coating surface of the wafer (7) in a propping manner, and the hollow screw (15) is electrically connected with the conductive ring (23).
2. The double-wafer coating clamp according to claim 1, wherein a large-sized retractable conductive pin screw is arranged between the conductive plate (10) and the left conductive plate embedding groove (8), and the end of a retractable conductive pin in the large-sized retractable conductive pin screw abuts against the inner side surface of the left conductive plate (6); a right conductive disc embedding groove is formed in the right vertical surface of the right insulating clamp plate (2), a right conductive disc is embedded into the right conductive disc embedding groove, and the right conductive disc is electrically connected with the conductive plate (10); and the right side conductive disc is provided with another wafer, the right side vertical surface of the right side insulating clamping plate (2) outside the other wafer is provided with another clamp annular cover ring, and the structure of the other clamp annular cover ring is completely the same as that of the clamp annular cover ring (5).
3. The dual-wafer coating clamp of claim 2, wherein the annular cover ring (5) is formed by laminating and sealing an outer silicone rubber ring (18) and an inner silicone rubber ring (19), and a conductive ring (23) is embedded between the outer silicone rubber ring (18) and the inner silicone rubber ring (19); the inner circle of the outer silicon rubber ring (18) is provided with outer silicon rubber ring inward protruding tongues (20) at equal intervals along the radial direction, the outer silicon rubber ring inward protruding tongues (20) are provided with outer silicon rubber ring conductive needle through holes (21), the inner circle of the inner silicon rubber ring (19) is provided with inner silicon rubber ring inward protruding tongues (22) at equal intervals along the radial direction, the inner silicon rubber ring inward protruding tongues (22) are provided with inner silicon rubber ring conductive needle through holes (23), the inner circle of the conductive ring (23) is provided with conductive ring inward protruding tongues (24) at equal intervals along the radial direction, the conductive ring inward protruding tongues (24) are provided with conductive needle through conductive screw holes (25) on the conductive ring, and small-sized telescopic needle screws (26) sequentially penetrate through the outer silicon rubber ring conductive needle through holes (21) along the left-to-right direction, After the conducting pins on the conducting rings penetrate through the screw holes (25) and the conducting pins on the inner side silicon rubber rings penetrate through the holes (23), the end heads of the telescopic conducting pins (16) on the small-size telescopic conducting pin screws (26) are abutted against the excircle of the film coating surface of the wafer (7).
4. The double-wafer coating clamp according to claim 3, wherein the conductive plate (10) is in a T-shaped pendulum shape, and a large-sized retractable conductive pin screw through screw hole (13) is formed in the conductive plate (10); a T-shaped pendulum-shaped conductive plate embedding groove (9) is formed in the left vertical surface of the right insulating clamping plate (2), and a screw end embedding groove (12) of a telescopic conductive pin screw is formed in the conductive plate embedding groove (9); the large-size telescopic conductive needle screw is screwed in the telescopic conductive needle screw penetrating screw hole (13), the screw end of the large-size telescopic conductive needle screw is embedded in the screw end embedding groove (12), and the hollow screw rod of the large-size telescopic conductive needle screw penetrates out of a left conductive disc embedding groove (8) formed in the left vertical surface of the left insulating clamp plate (1).
5. The double-wafer coating clamp of claim 4, wherein a conductive screw through screw hole (11) is formed at the end of the horizontal plate at the top end of the T-shaped pendulum-shaped conductive plate (10), an electrode lead-in U-shaped clamp (3) is clamped between the top end of the left side insulating clamp (1) and the top end of the right side insulating clamp (2) which are laminated together, and the conductive screw (4) is screwed with the conductive screw through screw hole (11) after passing through the electrode lead-in U-shaped clamp (3).
6. The double-wafer coating clamp as claimed in claim 3, wherein a conductive plate fixing screw hole (17) is formed in the left conductive plate (6), and a rubber screw passes through the conductive plate fixing screw hole (17) to fix the left conductive plate (6) in the left conductive plate insertion groove (8); an electrode introducing hole (27) of the conductive ring (23) is provided on the left side elevation of the outer silicone rubber ring (18), and a conductive ring electrode introducing screw (28) is provided in the electrode introducing hole (27).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111298590.7A CN114197021A (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111298590.7A CN114197021A (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114197021A true CN114197021A (en) | 2022-03-18 |
Family
ID=80646797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111298590.7A Pending CN114197021A (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114197021A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896881A (en) * | 2022-11-17 | 2023-04-04 | 安徽建筑大学 | Semiconductor wafer capable of preventing deviation, pretreatment method and electroplating system thereof |
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- 2021-11-04 CN CN202111298590.7A patent/CN114197021A/en active Pending
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| JPH11200096A (en) * | 1997-11-06 | 1999-07-27 | Ebara Corp | Plating jig for wafer |
| JPH11172492A (en) * | 1997-12-15 | 1999-06-29 | Ebara Corp | Plating jig for semiconductor wafer |
| US6080291A (en) * | 1998-07-10 | 2000-06-27 | Semitool, Inc. | Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member |
| CN101220500A (en) * | 2007-08-29 | 2008-07-16 | 中国电子科技集团公司第二研究所 | Wafer convex point producing hanging fixture |
| CN202054916U (en) * | 2011-02-24 | 2011-11-30 | 深圳市常兴金刚石磨具有限公司 | Work fixture capable of simultaneously electroplating multiple cutting discs |
| WO2014076781A1 (en) * | 2012-11-14 | 2014-05-22 | 株式会社Ｊｃｕ | Substrate plating jig |
| CN208455094U (en) * | 2018-05-29 | 2019-02-01 | 苏州亚硕新能源有限公司 | Wafer electroplating fixture sealing conducting ring |
| CN111394776A (en) * | 2020-04-07 | 2020-07-10 | 中国电子科技集团公司第十三研究所 | Self-locking hanger for double-sided electroplating of wafer |
| CN112522769A (en) * | 2020-12-23 | 2021-03-19 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Electroplating bath body capable of realizing synchronous coating of double wafers in same bath |
| CN113564676A (en) * | 2021-07-30 | 2021-10-29 | 新阳硅密（上海）半导体技术有限公司 | Conductive sealing assembly and electroplating clamp comprising same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896881A (en) * | 2022-11-17 | 2023-04-04 | 安徽建筑大学 | Semiconductor wafer capable of preventing deviation, pretreatment method and electroplating system thereof |
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