CN211079388U - Wafer through hole copper electroplating clamp - Google Patents

Wafer through hole copper electroplating clamp Download PDF

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Publication number
CN211079388U
CN211079388U CN201922278177.9U CN201922278177U CN211079388U CN 211079388 U CN211079388 U CN 211079388U CN 201922278177 U CN201922278177 U CN 201922278177U CN 211079388 U CN211079388 U CN 211079388U
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China
Prior art keywords
substrate
wafer
conductive
insulating
base plate
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CN201922278177.9U
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Chinese (zh)
Inventor
穆俊宏
王文君
奉建华
林彬
蔡星周
张继华
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Chengdu Maike Technology Co ltd
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Chengdu Maike Technology Co ltd
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Priority to CN201922278177.9U priority Critical patent/CN211079388U/en
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Abstract

The utility model discloses a wafer through-hole copper electroplating fixture, including insulating and the same first base plate and second base plate of structure, first base plate and second base plate are parallel to each other, and are provided with the recess on two adjacent faces of first base plate and second base plate, be provided with the conductive ring plate in the recess, be provided with insulating cushion and a plurality of conductive elastic sheet on the conductive ring plate towards the side of recess notch, insulating cushion covers all conductive elastic sheet, and is provided with a plurality of through-holes on the insulating cushion, and every conductive elastic sheet is located a through-hole; the first substrate and the second substrate are detachably connected, the insulating elastic pad of the first substrate and the insulating elastic pad of the second substrate can clamp the edge of the wafer tightly, and electroplating liquid holes are formed in the insulating elastic pad and the bottom of the groove. The utility model discloses metal copper deposit is in junction between them when can preventing to electroplate to avoid wafer and conductive ring board to bond together.

Description

Wafer through hole copper electroplating clamp
Technical Field
The utility model relates to a wafer processing equipment field, concretely relates to wafer through-hole copper electroplating fixture.
Background
In the wafer processing and manufacturing process, a copper layer is required to be electroplated in through holes of a wafer, and during electroplating, the wafer is generally connected with a negative electrode of a power supply, an electroplating solution is connected with a positive electrode of the power supply through an anode, and copper ions in the electroplating solution are deposited in the through holes of the wafer under the action of an electric field. The wafer is generally fixed through the anchor clamps, then links to each other with the power negative pole through the conducting strip, because need put into the wafer whole electroplate liquid, the conducting strip inevitably also has some to get into the electroplate liquid, if the conducting strip contacts with the electroplate liquid, can lead to copper ion deposit in the junction of conducting strip and wafer, leads to the conducting strip to glue together after electroplating with the wafer, is difficult to separate.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a wafer through-hole copper electroplating fixture is provided can prevent that the conducting strip from contacting the electroplating solution to avoid conducting strip and wafer to glue together.
The utility model provides a technical scheme that technical problem adopted is: a wafer through hole copper electroplating clamp comprises a first substrate and a second substrate which are insulated and have the same structure, wherein the first substrate and the second substrate are parallel to each other, two adjacent surfaces of the first substrate and the second substrate are provided with grooves, conductive ring plates are arranged in the grooves, the side surfaces, facing the groove openings of the grooves, of the conductive ring plates are provided with insulating elastic pads and a plurality of conductive elastic sheets, the insulating elastic pads cover all the conductive elastic sheets, the insulating elastic pads are provided with a plurality of through holes, and each conductive elastic sheet is positioned in one through hole; the first substrate and the second substrate are detachably connected, the insulating elastic pad of the first substrate and the insulating elastic pad of the second substrate can clamp the edge of the wafer tightly, and electroplating liquid holes are formed in the insulating elastic pad and the bottom of the groove.
Furthermore, the edge of the groove is connected with a connecting groove extending to the edge of the first substrate or the second substrate, a conducting strip is arranged in the connecting groove, and the conducting strip is connected with the conducting ring plate.
Further, the conducting plate and the conducting ring plate are integrally formed.
Further, the conductive ring plate is a titanium metal plate.
Further, the insulating elastic pad is a rubber pad.
Further, the first substrate and the second substrate are both PP plates.
Further, the first substrate and the second substrate are connected by a plurality of screws.
Compared with the prior art, the beneficial effects of the utility model are that: the conductive ring plate is connected to the power supply cathode, thereby connecting the wafer to the power supply cathode. During the use, the edge of wafer is cliied by the insulating cushion of first base plate and second base plate to keep the stability of wafer, the wafer links to each other through electrically conductive flexure strip and conductive ring board, can avoid wafer and conductive ring board large tracts of land contact and lead to the junction between them to be in the plating solution, and metal copper deposit is in junction between them when preventing to electroplate, thereby avoids wafer and conductive ring board to bond together.
Drawings
FIG. 1 is a schematic cross-sectional view of the present invention in use;
FIG. 2 is a schematic front view of a first substrate and a second substrate;
reference numerals: 1 — a first substrate; 2 — a second substrate; 3-conductive ring plate; 4-conductive elastic sheet; 5, insulating elastic cushion; 6-a through hole; 7-electroplating liquid hole; 8, connecting grooves; 9-conducting strip.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
The utility model discloses a wafer through-hole copper electroplating fixture, as shown in fig. 1 and 2, including insulating and the same first base plate 1 of structure and second base plate 2, first base plate 1 and second base plate 2 are parallel to each other, and are provided with the recess on two adjacent faces of first base plate 1 and second base plate 2, be provided with conductive ring plate 3 in the recess, be provided with insulating elastic pad 5 and a plurality of conductive elastic sheet 4 on the side of conductive ring plate 3 towards the recess notch, insulating elastic pad 5 covers all conductive elastic sheet 4, and is provided with a plurality of through-holes 6 on insulating elastic pad 5, and each conductive elastic sheet 4 is located a through-hole 6; first base plate 1 and second base plate 2 can dismantle the connection, and the edge of the insulating cushion 5 of first base plate 1 and the insulating cushion 5 of second base plate 2 can press from both sides tight wafer, be provided with plating solution hole 7 on the insulating cushion 5 and the tank bottom of recess.
The first substrate 1 and the second substrate 2 are used as a base, and are made of insulating materials which do not react with electroplating solution, so that the electroplating of the wafer is prevented from being influenced. Specifically, PP (polypropylene) boards may be used for the first substrate 1 and the second substrate 2, but PC (polycarbonate) boards and the like may also be used.
The conductive ring plate 3 is rectangular ring-shaped and used for connecting the wafer and the power supply cathode, and various conductive metal plates such as copper plates can be adopted, preferably, the conductive ring plate 3 is a titanium metal plate, the titanium metal material is corrosion-resistant, and the conductivity is better. The conductive annular plate 3 can be directly connected with a power supply cathode through a wire, in order to facilitate wiring, the edge of the groove is connected with a connecting groove 8 extending to the edge of the first substrate 1 or the second substrate 2, a conductive sheet 9 is arranged in the connecting groove 8, and the conductive sheet 9 is connected with the conductive annular plate 3. One end of the conducting plate 9 is connected with the conductive ring plate 3, and is welded, preferably, the conducting plate 9 and the conductive ring plate 3 are integrally formed and cut from a plate material. The other end of the conductive sheet 9 extends beyond the first substrate 1 and the second substrate 2, and can be conveniently connected with a wire.
The insulating elastic pad 5 is used for pressing the wafer tightly and separating the wafer from the conductive annular plate 3, so that the wafer is prevented from being directly contacted with the conductive annular plate 3 in a large area and being bonded, the conductive elastic sheet 4 is used for being contacted with the wafer and communicating the wafer, and the probability of contact between the joint of the conductive elastic sheet 4 and the electroplating solution is smaller because the contact area between the conductive elastic sheet and the wafer is small. When not in use, the conductive elastic piece 4 is located in the through hole 6, and the end portion thereof does not protrude out of the through hole 6. During the use, put the wafer between the insulating elastic cushion 5 of first base plate 1 and the insulating elastic cushion 5 of second base plate 2, utilize two insulating elastic cushion 5 to press from both sides tight wafer, because insulating elastic cushion 5 warp after the compression, electrically conductive elastic sheet 4 then can stretch out through-hole 6 and contact with the wafer, guarantee the circular telegram of wafer, in addition, insulating elastic cushion 5 has better sealed effect after compressing tightly, can prevent that the plating solution from flowing to electrically conductive elastic sheet 4 department, thereby avoid the copper deposit in the plating solution to lead to both to bond in the contact position of electrically conductive elastic sheet 4 and wafer.
The insulating elastic pad 5 can be a plastic pad or the like, and preferably, the insulating elastic pad 5 is a rubber pad, so that the insulating elastic pad has good elasticity and strong sealing property.
The first substrate 1 and the second substrate 2 can be connected by various detachable connection methods, and preferably, the first substrate 1 and the second substrate 2 are connected by a plurality of screws. The screw is used with the nut cooperation, and the accessible is rotated the nut and is adjusted the interval between first base plate 1 and the second base plate 2, and then adjusts the packing force between two insulating elastic cushions 5, avoids the packing force too big or undersize.

Claims (7)

1. A wafer through hole copper electroplating clamp is characterized by comprising a first substrate (1) and a second substrate (2) which are insulated and have the same structure, wherein the first substrate (1) and the second substrate (2) are parallel to each other, two adjacent surfaces of the first substrate (1) and the second substrate (2) are provided with grooves, conductive annular plates (3) are arranged in the grooves, the side surfaces, facing the groove openings, of the conductive annular plates (3) are provided with insulating elastic pads (5) and a plurality of conductive elastic sheets (4), the insulating elastic pads (5) cover all the conductive elastic sheets (4), the insulating elastic pads (5) are provided with a plurality of through holes (6), and each conductive elastic sheet (4) is positioned in one through hole (6); the first substrate (1) and the second substrate (2) are detachably connected, the insulating elastic pad (5) of the first substrate (1) and the insulating elastic pad (5) of the second substrate (2) can clamp the edge of a wafer tightly, and electroplating liquid holes (7) are formed in the insulating elastic pad (5) and the groove bottom of the groove.
2. The wafer through hole copper electroplating fixture as claimed in claim 1, wherein the edge of the groove is connected with a connecting groove (8) extending to the edge of the first substrate (1) or the second substrate (2), a conducting strip (9) is arranged in the connecting groove (8), and the conducting strip (9) is connected with the conducting ring plate (3).
3. The wafer through-hole copper electroplating jig as claimed in claim 2, wherein the conductive plate (9) is integrally formed with the conductive ring plate (3).
4. The wafer through hole copper electroplating fixture as claimed in claim 1, wherein the conductive ring plate (3) is a titanium metal plate.
5. The wafer through hole copper electroplating fixture as claimed in claim 1, wherein the insulating elastic pad (5) is a rubber pad.
6. The wafer via hole copper electroplating fixture as claimed in claim 1, wherein the first substrate (1) and the second substrate (2) are both PP plates.
7. The wafer via hole copper electroplating fixture as claimed in claim 1, wherein the first substrate (1) and the second substrate (2) are connected by a plurality of screws.
CN201922278177.9U 2019-12-17 2019-12-17 Wafer through hole copper electroplating clamp Active CN211079388U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922278177.9U CN211079388U (en) 2019-12-17 2019-12-17 Wafer through hole copper electroplating clamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922278177.9U CN211079388U (en) 2019-12-17 2019-12-17 Wafer through hole copper electroplating clamp

Publications (1)

Publication Number Publication Date
CN211079388U true CN211079388U (en) 2020-07-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201922278177.9U Active CN211079388U (en) 2019-12-17 2019-12-17 Wafer through hole copper electroplating clamp

Country Status (1)

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CN (1) CN211079388U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111850664A (en) * 2020-08-24 2020-10-30 昆山伟睿机电有限公司 Electroplating clamp for solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111850664A (en) * 2020-08-24 2020-10-30 昆山伟睿机电有限公司 Electroplating clamp for solar cell

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Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: A kind of copper electroplating fixture with round through hole

Effective date of registration: 20201225

Granted publication date: 20200724

Pledgee: Chengdu SME financing Company Limited by Guarantee

Pledgor: Chengdu Maike Technology Co.,Ltd.

Registration number: Y2020980009782

PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20220308

Granted publication date: 20200724

Pledgee: Chengdu SME financing Company Limited by Guarantee

Pledgor: Chengdu Maike Technology Co.,Ltd.

Registration number: Y2020980009782