CN214655335U - Electroplating hanger and electroplating device - Google Patents

Electroplating hanger and electroplating device Download PDF

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Publication number
CN214655335U
CN214655335U CN202120560974.0U CN202120560974U CN214655335U CN 214655335 U CN214655335 U CN 214655335U CN 202120560974 U CN202120560974 U CN 202120560974U CN 214655335 U CN214655335 U CN 214655335U
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China
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wafer
electroplating
lower carrier
plating
hanger
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CN202120560974.0U
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Chinese (zh)
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王东升
孔跃春
王国峰
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Qingdao Huike Microelectronics Co ltd
Qingdao Huixin Microelectronics Co ltd
Beihai Huike Semiconductor Technology Co Ltd
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Qingdao Huike Microelectronics Co ltd
Qingdao Huixin Microelectronics Co ltd
Beihai Huike Semiconductor Technology Co Ltd
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Abstract

The application discloses an electroplating hanger and an electroplating device, wherein the electroplating hanger comprises a lower support plate, a fixing structure, a conductive structure, a cathode interface and a protruding part, wherein a wafer groove for placing a wafer is formed in the lower support plate, the fixing structure is used for fixing the wafer in the wafer groove, the back of the wafer is sealed, and the front of the wafer is exposed; the conductive structure is used for being attached to the back surface of the wafer; the protruding part is arranged on the outer side of the wafer groove, is connected with the lower support plate or the fixed structure, and protrudes out of the lower support plate and the fixed structure towards the electroplating surface direction of the wafer. After the electroplating hanger is placed into the plating tank and is immersed in the electroplating solution, when the electroplating hanger is attached to the plating tank, the electroplating surface of the wafer can be separated from the plating tank by the protruding parts, so that the electroplating surface of the wafer is prevented from being shielded, the electroplating surface of the wafer is fully contacted with the electroplating solution, and the electroplating hanger cannot influence the electroplating of the wafer no matter how the electroplating hanger is placed in the plating tank.

Description

Electroplating hanger and electroplating device
Technical Field
The application relates to the field of wafer electroplating, in particular to an electroplating hanger and an electroplating device.
Background
In the production process of the wafer, electroplating treatment needs to be carried out on the wafer; when the wafer is electroplated, a hanger is used for assisting the electroplating process, so that the wafer is placed in the electroplating solution for electroplating. Electroplating refers to the electrolytic reaction in an electroplating solution under the action of external direct current so as to deposit a metal or alloy layer on the surface of a wafer. When electroplating is carried out, the anode of the power supply is electrically connected into the electroplating solution, and the cathode of the power supply is connected with the wafer; when the current is conducted, the positively charged cations in the plating solution move toward the cathode of the circuit, and a reduction reaction occurs on the surface of the wafer, thereby forming a plating layer covering the surface of the wafer.
At present, when a wafer is placed into electroplating solution by using an electroplating hanger for electroplating, the electroplating hanger is easy to stick to an electroplating tank, so that an electroplating surface of the wafer is shielded, the electroplating surface of the wafer cannot be in full contact with the electroplating solution, and the electroplating efficiency of the wafer is influenced.
SUMMERY OF THE UTILITY MODEL
The purpose of the application is to provide an electroplating hanger and an electroplating device, which can enable a wafer to be fully contacted with an electroplating solution during electroplating.
The application discloses an electroplating hanger, which comprises a lower support plate, a fixing structure, a conductive structure, a cathode interface and a protruding part, wherein a wafer groove for placing a wafer is formed in the lower support plate, the fixing structure is used for fixing the wafer in the wafer groove, the back of the wafer is sealed, and the front of the wafer is exposed; the conductive structure is arranged at the bottom of the wafer groove and is used for being attached to the back of the wafer; the cathode interface is fixed on the lower carrier plate and is electrically connected with the conductive structure; the protruding part is arranged on the outer side of the wafer groove, is connected with the lower support plate or the fixed structure, and protrudes out of the lower support plate and the fixed structure towards the electroplating surface direction of the wafer.
Optionally, the protruding portion is disposed on the lower carrier plate and attached to an edge of a side of the lower carrier plate.
Optionally, the protruding portions are disposed on two sides of the lower carrier plate, and the protruding portions are symmetrically distributed in the central axis direction of the lower carrier plate.
Optionally, one side of the lower carrier plate is provided with one protruding portion, and the length of the protruding portion is equal to the length of the side edge of the lower carrier plate.
Optionally, each side of the lower carrier plate includes a first oblique edge, a second oblique edge, and a straight edge, two ends of the straight edge are respectively connected to one end of the first oblique edge and one end of the second oblique edge, the first oblique edge extends toward the cathode interface, and the second oblique edge extends toward a direction away from the cathode interface; the length of the protruding portion is equal to the length of the straight edge.
Optionally, one side of the lower carrier plate is provided with a plurality of protruding portions, and the distances between adjacent protruding portions are equal.
Optionally, the cross section of the protruding portion is triangular, and the bottom of the triangle is attached to the surface of the lower carrier plate.
Optionally, the lower carrier plate includes a first wafer groove and a second wafer groove, the first wafer groove is disposed on the front side of the lower carrier plate, and the second wafer groove is disposed on the back side of the lower carrier plate; the fixing structure comprises a first upper cover and a second upper cover, the first upper cover fixes a wafer in the first wafer groove, and the second upper cover fixes the wafer in the second wafer groove; the conductive structure comprises a first conductive ring and a second conductive ring, wherein the first conductive ring is arranged at the bottom of the first wafer groove and is attached to the back surface of the wafer in the first wafer groove; the second conducting ring is arranged at the bottom of the second wafer groove and is attached to the back surface of the wafer in the second wafer groove; the first conducting ring and the second conducting ring are both electrically connected with the cathode interface; the protruding parts comprise a first protruding part and a second protruding part, the first protruding part is arranged on the front surface of the lower carrier plate, and the second protruding part is arranged on the back surface of the lower carrier plate.
Optionally, the first protrusion and the second protrusion are symmetrical to each other.
The application also discloses an electroplating device, the electroplating device comprises the electroplating hanger.
The outer side of the electroplating hanger is provided with the protruding part, and the protruding part protrudes out of the lower support plate and the fixing structure in the direction towards the electroplating surface of the wafer; after the electroplating hanger is placed into the plating tank and is immersed in the electroplating solution, when the electroplating hanger is attached to the plating tank, the electroplating surface of the wafer can be separated from the plating tank by the protruding parts, so that the electroplating surface of the wafer is prevented from being shielded, the electroplating surface of the wafer is fully contacted with the electroplating solution, and the electroplating hanger cannot influence the electroplating of the wafer no matter how the electroplating hanger is placed in the plating tank.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic block diagram of an electroplating apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of an electroplating apparatus according to an embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of a plating hanger of the plating apparatus of FIG. 2;
FIG. 4 is a schematic cross-sectional view of another plating hanger of the plating apparatus of FIG. 2;
FIG. 5 is a schematic front view of a plating hanger of the plating apparatus of FIG. 2;
FIG. 6 is a schematic front view of another plating hanger of the plating apparatus of FIG. 2;
FIG. 7 is a schematic front view of an electroplating hanger in another electroplating apparatus;
FIG. 8 is a schematic view of the back side of a plating hanger in another plating apparatus;
FIG. 9 is a schematic cross-sectional view of a plating hanger in another plating apparatus;
FIG. 10 is a schematic diagram of a conductive structure provided in one embodiment of the present application;
FIG. 11 is a schematic view of another conductive structure provided by an embodiment of the present application;
FIG. 12 is a schematic view of another conductive structure provided by an embodiment of the present application;
FIG. 13 is a schematic view of a rubber mat according to an embodiment of the present application;
fig. 14 is a schematic view of an upper cover provided with a sealing ring according to an embodiment of the present application.
100, an electroplating device; 200. a power source; 210. a negative electrode; 220. a positive electrode; 300. plating bath; 310. electroplating solution; 400. electroplating a hanger; 410. a lower carrier plate; 411. a wafer groove; 4111. a first wafer pocket; 4112. a second wafer pocket; 412. a conductive slot; 420. a fixed structure; 421. an upper cover; 4211. a first upper cover; 4212. a second upper cover; 422. electroplating holes; 423. a first step surface; 424. a second step surface; 430. a conductive structure; 431. conducting rings; 4311. a first conductive ring; 4312. a second conductive ring; 432. an interface; 440. a cathode interface; 450. a fixing ring; 460. a seal assembly; 461. a rubber pad; 462. a first rubber pad; 463. a second rubber pad; 464. an opening; 465. a rubber ring; 466. a first rubber ring; 467. a second rubber ring; 470. a screw; 480. a protrusion; 481. a first protrusion; 482. a second protrusion; 483. a first beveled edge; 484. a second beveled edge; 485. straight sides; 500. and (5) a wafer.
Detailed Description
It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or combinations thereof may be present or added.
Further, terms of orientation or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are described based on the orientation or relative positional relationship shown in the drawings, are simply for convenience of description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, and integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The present application is described in detail below with reference to the figures and alternative embodiments.
Referring to fig. 1-3, a plating apparatus 100 is schematically illustrated. As an embodiment of the present application, a plating apparatus 100 is disclosed, the plating apparatus 100 comprising a power supply 200, a plating tank 300, and a plating hanger 400, the plating tank 300 being configured to contain a plating solution 310, the plating solution 310 being in communication with a positive electrode 220 of the power supply 200; the plating hanger 400 comprises a lower carrier plate 410, a fixing structure 420, a conductive structure 430, a cathode interface 440 and a protrusion 480, wherein a wafer tank 411 for placing a wafer 500 is arranged on the front surface of the lower carrier plate 410, the fixing structure 420 is used for fixing the wafer 500 in the wafer tank 411, and is used for exposing the front surface of the wafer 500 to the plating solution 310 in the plating tank 300 and sealing the back surface of the wafer 500; the conductive structure 430 is disposed at the bottom of the wafer slot 411 and attached to the back surface of the wafer 500; the cathode interface 440 is fixed on the lower carrier plate 410, one end of the cathode interface 440 is electrically connected to the conductive structure 430, and the other end is electrically connected to the negative electrode 210 of the power supply 200; the protrusion 480 is disposed outside the wafer slot 411, connected to the lower carrier 410 or the fixing structure 420, and protrudes from the lower carrier 410 and the fixing structure 420 in the direction of the plating surface of the wafer 500.
Currently, the cathode 210 is usually connected to the edge of the front surface of the wafer 500, and then the front surface of the wafer 500 is electroplated, but in this case, a seed layer needs to be formed on the front surface of the wafer 500, and the seed layer flows through the entire surface of the wafer 500, so as to achieve the electroplating purpose; after the electroplating is finished, the seed layer metal needs to be snapped by etching liquid. The present disclosure provides an electroplating apparatus 100, wherein an electroplating hanger 400 in the electroplating apparatus 100 can fix a wafer 500 and expose the front side of the wafer 500, and a conductive structure 430 in the electroplating hanger 400 can electrically connect the back side of the wafer 500 with a cathode 210, so as to implement electroplating by utilizing the back side conductivity of the wafer 500; due to the fact that the PN junction exists in the wafer 500, only one-way conduction of current can be achieved, after the back face of the wafer 500 is conducted, electrons penetrate through the PN junction to reach the surface of the pad in the wafer 500, metal ions in the electroplating solution 310 combine with the electrons on the surface of the pad to generate metal simple substances, and the metal simple substances are deposited on the pad, so that a coating can be formed. Therefore, electroplating can be realized without laying a seed layer on the front surface of the wafer 500, so that the whole electroplating process can save two steps of sputtering of the seed layer and etching of the sputtering layer, the process steps are simplified, and the cost is reduced. In addition, according to the present application, the protrusion 480 is further added to the plating hanger 400, so that when the plating hanger 400 is placed in the plating tank 300, if the plating hanger 400 is closer to the sidewall of the plating tank 300, the protrusion 480 can separate the plating surface of the wafer 500 from the sidewall of the plating tank 300, so that the plating surface of the wafer 500 is sufficiently contacted with the plating solution 310, and the normal plating of the wafer 500 is ensured.
In this embodiment, as shown in fig. 3, the protrusion 480 may be only disposed on the front surface of the lower carrier 410, and if the plating hanger 400 is closer to the sidewall of the plating tank 300, the protrusion 480 can separate the plating surface of the wafer 500 from the sidewall of the plating tank 300; as shown in fig. 4, the protrusions 480 may be disposed on both the front and back surfaces of the lower carrier plate 410, such that when the plating rack 400 is closer to the sidewall of the plating tank 300 or the distance between two adjacent plating racks 400 is closer, the protrusions 480 may ensure that the plating surface of each wafer 500 can be fully contacted with the plating solution 310 and will not be blocked by the sidewall of the plating tank 300 or the adjacent plating rack 400. Of course, the protrusion 480 may be disposed on the fixing structure 420 or other positions of the plating rack 400, as long as the plating surface of the wafer 500 can be sufficiently contacted with the plating solution 310 when the plating rack 400 is attached to the sidewall of the plating tank 300.
The protrusion 480 of the plating hanger 400 is disposed on the lower carrier 410 and attached to the edge of the side of the lower carrier 410; at this time, the protrusion 480 is located at the side edge of the plating hanger 400, and the distance between the protrusion 480 and the wafer 500 is large, so that even if the distance between the plating hanger 400 and the sidewall of the plating tank 300 is short, and the protrusion 480 is attached to the sidewall of the plating tank 300, the existence of no obstacle around the plating surface of the wafer 500 can be ensured, the wafer 500 can be in full contact with the plating solution 310, and metal cations in the plating solution 310 are not blocked and influenced, so that the plating rate of the wafer 500 is not influenced. Of course, the protrusion 480 may also be disposed at the center, bottom, top or other non-side edge of the lower carrier 410, which is not limited herein.
Moreover, the protruding portions 480 are disposed at two sides of the lower carrier 410, and the protruding portions 480 are symmetrically distributed in the central axis direction of the lower carrier 410; since the sidewall of the plating tank 300 is a flat surface, when the protrusions 480 on the two sides of the lower carrier plate 410 are attached to the sidewall of the plating tank 300, there is a sufficient distance between the plating surface of the wafer 500 and the sidewall of the plating tank 300, and the distances between the positions of the plating surface and the sidewall of the plating tank 300 are equal, so that the contents of the plating solution 310 and the metal cations corresponding to the positions of the plating surface are the same, and the uniformity of the plating layer is good.
As shown in fig. 5, one side of the lower carrier 410 is provided with one protrusion 480, and the length of the protrusion 480 is equal to the length of the side of the lower carrier 410; when the electroplating hanger 400 is attached to the side wall of the plating tank 300, the stability of the electroplating hanger 400 is high, the top and the bottom are not easy to incline, and the uniform effect formed when the wafer 500 is electroplated is ensured. Specifically, each side of the lower carrier plate 410 includes a first oblique edge 483, a second oblique edge 484, and a straight edge 485, two ends of the straight edge 485 are respectively connected to one end of the first oblique edge 483 and one end of the second oblique edge 484, the first oblique edge 483 extends in a direction of the cathode interface 440, and the second oblique edge 484 extends in a direction away from the cathode interface 440; the length of the protrusion 480 is equal to the length of the straight edge 485. The protrusions 480 are correspondingly arranged on the straight edges 485 of the two side edges of the lower carrier plate 410, so that the stability of the electroplating hanger 400 is guaranteed, and meanwhile, the first inclined edge 483 and the second inclined edge 484 are respectively arranged at the two ends of the straight edges 485, so that the material consumption of the lower carrier plate 410 is reduced, and the blocking area of the electroplating solution 310 is also reduced.
Because the top of the electroplating hanger 400 is provided with the cathode interface 440 which needs to be conducted with the negative electrode 210 of the power supply 200, when the electroplating hanger 400 is put into the plating tank 300, the cathode interface 440 can not be contacted with the plating solution 310, thereby preventing electric leakage; if the top of the lower carrier 410 is not provided with the first inclined edge 483, when the top of the protrusion 480 is attached to the sidewall of the plating tank 300, the protrusion 480 separates the plating solution 310 above the wafer 500 from the external alignment solution, so as to hinder the movement of the metal cations; if the bottom of the lower carrier plate 410 is not provided with the second bevel 484, when the top of the protrusion 480 is attached to the sidewall of the plating tank 300 and the bottom of the lower carrier plate 410 is attached to the bottom of the plating tank 300, the protrusion 480 separates the plating solution 310 below the wafer 500 from the external alignment liquid, thereby blocking the movement of metal cations. Therefore, the present application provides the first inclined edge 483 and the second inclined edge 484 at the bottom and the bottom of the lower carrier plate 410, respectively, so that the plating rack 400 can ensure the sufficient reaction of the plating surface and the metal cations in the plating solution 310 at any position in the plating tank 300.
As shown in fig. 6, the number of the protrusions 480 is greater than 2, that is, a plurality of protrusions 480 are disposed on one side of the lower carrier 410, and the distances between adjacent protrusions 480 are equal; compared with the scheme that the protruding parts 480 on each side of the lower carrier plate 410 in fig. 5 are integrated, the protruding parts 480 on each side of the lower carrier plate 410 in fig. 6 are discontinuous, except for material saving, after the tops of the protruding parts 480 are abutted with the side walls of the plating tank 300, because gaps are formed between the adjacent protruding parts 480, the protruding parts 480 do not form a sealed environment, and the inner plating liquid 310 and the outer plating liquid 310 are separated to influence the movement of metal cations.
In this application, the top of the protrusion 480 may be a sharp corner, that is, the cross section of the protrusion 480 is triangular, the bottom of the triangle is attached to the surface of the lower carrier 410, and the top of the protrusion 480 faces the sidewall of the plating tank 300. When the protrusion 480 is attached to the sidewall of the plating tank 300, the contact area between the protrusion 480 and the sidewall of the plating tank 300 is small, and the blocking effect on the plating solution 310 is poor, so that the metal cations are easily diffused; secondly, the shape of the protrusion 480 causes the plating hanger 400 to have less resistance in the plating solution 310, which makes it easier to take the plating hanger 400 out of or into the plating solution 310. Of course, the shape of the protrusion 480 may also be trapezoidal, square, etc., and is not limited herein.
As another embodiment of the present application, another electroplating apparatus 100 is also disclosed, the electroplating apparatus 100 includes a power supply 200, a plating tank 300, and a plurality of electroplating hangers 400, the plating tank 300 is used for accommodating a plating solution 310, and the plating solution 310 is communicated with a positive electrode 220 of the power supply 200; the plating hanger 400 comprises a lower carrier plate 410, a fixing structure 420, a conductive structure 430, a cathode interface 440, a first protrusion 481 and a second protrusion 482, wherein both the front surface and the back surface of the lower carrier plate 410 are provided with wafer slots 411 for placing wafers 500, and the fixing structure 420 is used for fixing the wafers 500 in the wafer slots 411 for exposing the front surfaces of the wafers 500 to the plating solution 310 in the plating tank 300; the conductive structure 430 is disposed at the bottom of the wafer slot 411 and attached to the back surface of the wafer 500; the cathode interface 440 is fixed on the lower carrier plate 410, one end of the cathode interface 440 is electrically connected to the conductive structure 430, and the other end is electrically connected to the negative electrode 210 of the power supply 200; the first protrusion 481 is connected to the lower carrier 410 or the fixing structure 420, and protrudes from the lower carrier 410 and the fixing structure 420 in the front direction of the lower carrier 410; the second protrusion 482 is connected to the lower carrier 410 or the fixing structure 420, and protrudes from the lower carrier 410 and the fixing structure 420 in a direction of a back surface of the lower carrier 410; the top of the first protrusion 481 is a sharp corner, and the top of the second protrusion 482 is a flat; in the adjacent plating hanger 400, the first protrusion 481 is disposed opposite to the second protrusion 482.
As shown in fig. 7-9, which are schematic plan, back and cross-sectional views of a plating rack 400, in the present embodiment, a plating apparatus 100 includes a plurality of plating racks 400, and each of the plating racks 400 has a wafer slot 411 on both sides, i.e., the lower carrier 410 includes a first wafer slot 4111 and a second wafer slot 4112, the first wafer slot 4111 is disposed on the front side of the lower carrier 410, and the second wafer slot 4112 is disposed on the back side of the lower carrier 410; the fixing structure 420 includes a first upper cap 4211 and a second upper cap 4212, the first upper cap 4211 fixes the wafer 500 in the first wafer groove 4111, and the second upper cap 4212 fixes the wafer 500 in the second wafer groove 4112; the conductive structure 430 includes a first conductive ring 4311 and a second conductive ring 4312, wherein the first conductive ring 4311 is disposed at the bottom of the first wafer groove 4111 and attached to the backside of the wafer 500 in the first wafer groove 4111; the second conductive ring 4312 is disposed at the bottom of the second circular groove 4112 and attached to the backside of the wafer 500 in the second circular groove 4112; the first conductive ring 4311 and the second conductive ring 4312 are both electrically connected to the cathode interface 440; the protrusions 480 include a first protrusion 481 and a second protrusion 482, the first protrusion 481 is disposed at the front surface of the lower carrier plate 410, and the second protrusion 482 is disposed at the rear surface of the lower carrier plate 410.
In the present application, at least two wafers 500 can be simultaneously plated by one plating rack 400, and the entire plating apparatus 100 can plate the wafers 500 in a plurality of plating racks 400; a plurality of electroplating hangers 400 are simultaneously placed in the plating tank 300, and because the electroplating hangers 400 with the same size have the same shape, in order to avoid the problem that the distance between two adjacent electroplating hangers 400 is too small to shield the electroplating surfaces, the front surface and the back surface of the lower support plate 410 are provided with the protruding parts 480, so that each electroplating surface can be fully contacted with the electroplating solution 310; further, a plurality of plating hangers 400 are placed in the same direction in the plating apparatus 100, wherein the top of the first protrusion 481 disposed on the front surface of the lower carrier 410 is sharp, and the top of the second protrusion 482 disposed on the back surface of the lower carrier 410 is flat, i.e. the cross section of the first protrusion 481 is triangular, and the cross section of the second protrusion 482 is square or trapezoidal; when the first projection 481 and the second projection 482 of two adjacent plating hangers 400 abut against each other, it is possible to ensure that the plating surface between the first projection 481 and the second projection 482 can be in contact with a sufficient amount of the plating liquid 310. If the tops of the first protrusion 481 and the second protrusion 482 are sharp, when the two protrusions 480 abut against each other, the adjacent plating hangers 400 are dislocated, which easily causes the protrusion 480 in one plating hanger 400 to abut against the lower plate 410 in the other plating hanger 400, thereby affecting the plating of the wafer 500; if the tops of the first protrusion 481 and the second protrusion 482 are both flat, when the two protrusions 480 abut against each other, the two protrusions 480 are tightly attached to each other, so that the two plating hangers 400 are not easily separated.
Moreover, the first and second protrusions 481, 482 may be symmetrical to each other, making the plating hanger 400 more stable in the plating solution.
Other characteristic information of the protrusion 480 in this embodiment has already been described in the previous embodiment, and is not repeated herein.
Specifically, as shown in fig. 10, the present application discloses a conductive structure, where the conductive structure 430 is a conductive ring 431, that is, the conductive structure 430 is annular, and the conductive ring 431 is attached to the edge of the back surface of the wafer 500; the conductive structure 430 is formed in a ring shape and attached to the edge of the wafer 500, so that the length of the conductive wire can be reduced, the conductive ring 431 can be more conveniently fixed, and the arrangement of the conductive structure at the edge has a great promotion effect on the uniformity of electroplating. The conducting ring 431 has a plurality of interfaces 432 at its edge, and each of the interfaces 432 is electrically connected to the cathode interface 440 via a conducting wire. The cathode interface 440 can be a conductive copper plate, the conductive copper plate is connected with the interface 432 of the conductive ring 431 through a conducting wire, all conducting wires are connected to one conductive copper plate, and the conductive copper plate conducts all the interfaces 432 at the same time; the number of the interfaces 432 of the conductive ring 431 is 4, and the interfaces 432 are uniformly distributed on the outer side of the conductive ring 431, and the interfaces 432 may be embedded in the lower carrier plate 410, that is, the interfaces 432 are disposed on the outer side of the wafer slot 411, so that the protection effect on the interfaces 432 can be improved, and the interfaces 432 are prevented from being broken. The lower carrier plate 410 is provided with 4 wiring grooves, and each wiring groove is internally provided with a wire for connecting the interface 432 and the conductive copper plate, so that the wires are prevented from interfering with each other, and the attractive effect of the hanger is improved; after the wires are arranged in the wiring grooves, a protective layer is laid in the wiring grooves, so that the wires can be fixed, and the influence of the electroplating solution 310 on the corrosion of the wires in the electroplating process can be prevented; the protective layer may be transparent, so that the connection condition between the conductive ring 431 and the conductive copper plate can be observed at any time, and the problem that the conductive ring 431 is not uniform due to a certain conducting wire is prevented, and the electroplating effect of the wafer 500 is influenced.
Of course, the conductive structure 430 may have other shapes, as shown in fig. 11 and 12, and two other conductive structures 430 are disclosed. In fig. 11, the conductive structure 430 includes a plurality of concentric rings, and two adjacent concentric rings are connected by a metal trace; compared with the conductive ring 431, the conductive structure 430 in fig. 11 increases the contact area with the back surface of the wafer 500, which is beneficial to improving the conductive efficiency and the plating efficiency of the wafer 500, and the conductive structure 430 can be applied to wafers 500 with different sizes instead, each ring can correspond to one size of the wafer 500, and by fixing the wafer 500 on the ring with the corresponding size, the front surface of the wafer 500 can be plated while the back surface of the wafer 500 is conducted. In fig. 12, the conductive structure 430 is a complete plate-shaped structure, that is, there is no hollow in the middle of the conductive structure 430, and the edge of the conductive structure 430 is overlapped with the edge of the wafer 500, so that the bonding area between the back surface of the wafer 500 and the conductive structure 430 is the largest, and the conduction effect is the best, and the conductive structure 430 can also be applied to a plurality of wafers 500 with different sizes. For the connection between the conductive structure 430 and the conductive copper plate in fig. 11 and 12, the connection between the conductive structure 431 and the conductive copper plate in fig. 10 can be also performed, which is not described in detail herein.
Further, the plating hanger 400 further comprises a fixing ring 450, wherein the fixing ring 450 is disposed in the wafer tank 411, connected to the lower carrier 410, and fixes the conductive ring 431 or other conductive structures 430 at the bottom of the wafer tank 411. After the conductive ring 431 or other conductive structure 430 is fixed at the bottom of the wafer tank 411, only the wafer 500 needs to be replaced and the conductive structure 430 does not need to be adjusted every time the wafer tank 411 is electroplated by using the electroplating hanger 400, so that the installation efficiency of replacing the wafer 500 can be extremely high.
A conductive groove 412 is formed in the bottom of the wafer groove 411, the conductive ring 431 is disposed in the conductive groove 412, and the thickness of the conductive ring 431 is equal to the depth of the conductive groove 412; when the wafer 500 is placed in the wafer slot 411, the portion of the backside of the wafer 500 contacting the conductive ring 431 and the portion contacting the lower plate 410 are flat, so that the backside of the wafer 500 is pressed uniformly when being fixed, and the wafer 500 is not broken. The inner diameter of the retaining ring 450 is larger than the inner diameter of the conductive ring 431, and the bottom of the retaining ring 450 abuts the top of the conductive ring 431; the inner diameter of the conductive ring 431 is smaller than the size of the wafer 500, the outer diameter of the conductive ring 431 is larger than the size of the wafer 500, when the wafer 500 is installed, the back surface of the wafer 500 is attached to the top of the conductive ring 431, and the outer side of the wafer 500 is attached to the inner side of the fixing ring 450; the retaining ring 450 can retain the side surface of the wafer 500 while retaining the conductive ring 431. The outer side of the fixing ring 450 abuts against the side wall of the wafer slot 411, the inner side of the fixing ring 450 abuts against the wafer 500, and the bottom of the wafer 500 and the bottom of the fixing ring 450 are in the same plane; by tightly arranging the conductive ring 431, the fixing ring 450 and the wafer 500 in the wafer slot 411, the stability between the components is improved, the shaking abrasion is prevented, the occupied area of each component is saved, and the development of the electroplating hanger 400 towards miniaturization is facilitated.
The fixing structure 420 may be a structure integrally formed with the lower board 410, or an upper cover 421 disposed on the lower board 410, and the upper cover 421 may be connected to the lower board 410 by a screw fastening method, or may be connected to the lower board 410 by a screw 470 fastening method. Specifically, the upper cover 421 and the lower carrier plate 410 are fixed by screws 470; the upper cover 421 includes a plated hole 422, and the plated hole 422 corresponds to the front surface of the wafer 500, so that the front surface of the wafer 500 is exposed. The fixing structure 420 adopts the upper cover 421 and the screw fixing manner, so that the wafer 500 in the wafer slot 411 can be conveniently replaced after the upper cover 421 is separated from the lower loading plate 410; the upper cover 421 and the lower carrier plate 410 are fixed by 8 screws 470, and the screw holes in the upper cover 421 are uniformly distributed on the edges thereof, so that the upper cover 421 presses the wafer 500 uniformly when the upper cover 421 and the lower carrier plate 410 are fixed.
Specifically, the depth of the wafer slot 411 is greater than the height of the wafer 500, and the depth of the wafer slot 411 is equal to the height of the fixing ring 450; the bottom of the upper cover 421 includes a first step surface 423 and a second step surface 424 with different heights, and the first step surface 423 abuts against the top of the fixing ring 450 and the top of the lower load plate 410; the second step surface 424 abuts against the front surface of the wafer 500. Because the first step surface 423 of the upper cover 421 abuts against the top of the fixing ring 450, and the second step surface 424 abuts against the wafer 500, after the upper cover 421 is connected with the lower carrier plate 410, the upper cover 421 can fix the wafer 500, and can also fix the fixing ring 450, so as to prevent the fixing ring 450 from loosening, and the side surface of the fixing ring 450 abuts against the joint of the first step surface 423 and the second step surface 424 in the upper cover 421, so as to further reinforce the fixing ring 450, and meanwhile, the contact area between the upper cover 421 and the fixing ring 450 is increased, which is beneficial to improving the sealing effect on the wafer 500.
Moreover, the plating hanger 400 includes a sealing assembly 460, the sealing assembly 460 includes a rubber pad 461 and a rubber ring 465, the rubber pad 461 is disposed above the conductive ring 431 and abuts against the back surface of the wafer 500; the rubber ring 465 is disposed below the upper cover 421 and abuts the front surface of the wafer 500. The rubber pad 461 prevents the risk that the plating solution 310 flows into the back surface of the wafer 500, causing short circuit or generating electric leakage; meanwhile, the rubber pad 461 can also play a role of buffering, so that the wafer 500, the conductive ring 431 and the lower carrier plate 410 are prevented from being greatly worn; according to the electroplating hanger 400, the sealing structures are arranged on the front side and the back side of the wafer 500, so that the electroplating solution 310 is prevented from contacting with the back side of the wafer 500, and the sealing effect of the electroplating hanger 400 is greatly improved. As shown in fig. 13, which is a schematic view of a rubber pad 461, the rubber pad 461 includes a first rubber pad 462 and a second rubber pad 463, an outer edge of the second rubber pad 463 is connected to an inner edge of the first rubber pad 462, the second rubber pad 463 includes a plurality of openings 464, and the conductive ring 431 contacts with the back surface of the wafer 500 through the openings 464; the first rubber pad 462 is disposed at the edge of the wafer 500, and the outer diameter of the first rubber pad 462 may be larger than the size of the wafer 500, so that a buffer effect may exist between the retaining ring 450 and the conductive ring 431, and the conductive ring 431 is sealed at the same time, thereby preventing the plating solution 310 from flowing into the wafer tank 411 along the gap between the upper lid 421 and the lower plate 410 and short-circuiting the conductive ring 431.
The thickness of first rubber pad 462 may be greater than that of second rubber pad 463, so that the friction force between first rubber pad 462 and wafer 500 is increased by pressing down wafer 500 when lid 421 is fixed, thereby improving the sealing effect. The first rubber pad 462 mainly plays a role of buffering, and the inner diameter of the first rubber pad 462 can be smaller than that of the conductive ring 431, so that the first rubber pad 462 is attached to the conductive ring 431 and the lower loading plate 410 at the bottom of the wafer slot 411, and the wafer 500 and the lower loading plate 410 at the bottom of the wafer slot 411 are prevented from being greatly abraded. When the wafer 500 is pressed downward, the thickness of the second rubber pad 463 is smaller, so that the wafer 500 can contact the conductive ring 431 through the opening 464 of the second rubber pad 463; through the design of the opening 464 in the second rubber pad 463, the electroplating hanger 400 can be detected, when the wafer 500 is electroplated, the wafer 500 is pressed by the upper cover 421, so that the wafer 500 is contacted with the conductive ring 431 to form a loop, if an open circuit problem occurs in the electroplating process, the wafer 500 can be presumed to be loosened, and the back surface of the wafer 500 is not contacted with the conductive ring 431, so that the electroplating hanger 400 can be repaired in time.
As shown in fig. 14, the rubber ring 465 includes a first rubber ring 466 and a second rubber ring 467, the first rubber ring 466 is connected to the first step surface 423 and abuts against the top of the lower carrier plate 410, so as to prevent the plating solution 310 from flowing into the wafer tank 411 from the gap between the first step surface 423 and the upper cover 421; the second rubber ring 467 is connected with the second step surface 424 and is abutted against the front surface of the wafer 500, so as to prevent the plating solution 310 from flowing into the wafer tank 411 from the gap between the second step surface 424 and the wafer 500; by designing the two rubber rings 465 at the bottom of the upper cover 421, the plating solution 310 is prevented from entering the wafer tank 411 from both sides of the upper cover 421.
As another embodiment of the present application, another electroplating hanger is further disclosed, where the electroplating hanger 400 includes a lower carrier 410, a fixing structure 420, a conductive structure 430, and a cathode interface 440, a plating tank for placing a plated object is disposed on the lower carrier 410, and the fixing structure 420 is configured to fix the plated object in the plating tank, seal a back surface of the plated object, and expose a front surface of the plated object; the conductive structure 430 is arranged at the bottom of the plating tank and is used for being attached to the back of the plated object; the cathode interface 440 is fixed on the lower carrier 410 and electrically connected to the conductive structure 430. In the embodiment, the electroplating hanger 400 can not only electroplate the wafer 500, so that the back surface of the wafer 500 is conductive, and a plating layer is formed on the front surface; the electroplating can be carried out on other semiconductor devices, such as a printed circuit board and the like, and the technical effects that the electroplating can be realized without laying the seed layer 520 on the front surface of the plated object, so that the whole electroplating process can save two steps of sputtering and etching the sputtering layer of the seed layer 520, the process steps are simplified, and the cost is reduced can be achieved.
The foregoing is a more detailed description of the present application in connection with specific alternative embodiments, and the specific implementations of the present application are not to be considered limited to these descriptions. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.

Claims (10)

1. An electroplating hanger, comprising:
the lower carrier plate is provided with a wafer groove for placing a wafer;
the fixing structure is used for fixing the wafer in the wafer groove, sealing the back surface of the wafer and exposing the front surface of the wafer;
the conductive structure is arranged at the bottom of the wafer groove and is used for being attached to the back of the wafer;
the cathode interface is fixed on the lower carrier plate and is electrically connected with the conductive structure; and
and the protruding part is arranged on the outer side of the wafer groove, is connected with the lower support plate or the fixed structure, and protrudes out of the lower support plate and the fixed structure towards the electroplating surface direction of the wafer.
2. The plating hanger of claim 1, wherein the protrusion is disposed on the lower carrier and attached to an edge of a side of the lower carrier.
3. The plating hanger of claim 2, wherein the protrusions are disposed on two sides of the lower carrier, and the protrusions are symmetrically distributed along a central axis of the lower carrier.
4. The plating hanger of claim 3, wherein one side of said lower carrier plate is provided with one of said protrusions, and the length of said protrusion is equal to the length of the side of said lower carrier plate.
5. The plating hanger of claim 4, wherein each side of the lower carrier comprises a first oblique edge, a second oblique edge, and a straight edge, wherein two ends of the straight edge are connected to one end of the first oblique edge and one end of the second oblique edge, respectively, the first oblique edge extends in a direction toward the cathode interface, and the second oblique edge extends in a direction away from the cathode interface;
the length of the protruding portion is equal to the length of the straight edge.
6. The plating hanger of claim 3, wherein a plurality of said protrusions are provided on one side of said lower carrier plate, and the spacing between adjacent said protrusions is equal.
7. The plating hanger of claim 1, wherein the cross-section of the protrusion is triangular, and the bottom of the triangle is attached to the surface of the lower carrier.
8. The plating hanger of any one of claims 1 to 7, wherein the lower carrier comprises a first wafer pocket and a second wafer pocket, the first wafer pocket being disposed on a front side of the lower carrier, the second wafer pocket being disposed on a back side of the lower carrier;
the fixing structure comprises a first upper cover and a second upper cover, the first upper cover fixes a wafer in the first wafer groove, and the second upper cover fixes the wafer in the second wafer groove;
the conductive structure comprises a first conductive ring and a second conductive ring, wherein the first conductive ring is arranged at the bottom of the first wafer groove and is attached to the back surface of the wafer in the first wafer groove; the second conducting ring is arranged at the bottom of the second wafer groove and is attached to the back surface of the wafer in the second wafer groove; the first conducting ring and the second conducting ring are both electrically connected with the cathode interface;
the protruding parts comprise a first protruding part and a second protruding part, the first protruding part is arranged on the front surface of the lower carrier plate, and the second protruding part is arranged on the back surface of the lower carrier plate.
9. The plating hanger of claim 8, wherein the first protrusion and the second protrusion are symmetrical to each other.
10. An electroplating apparatus comprising the electroplating hanger according to any one of claims 1 to 9.
CN202120560974.0U 2021-03-18 2021-03-18 Electroplating hanger and electroplating device Active CN214655335U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114262918A (en) * 2021-12-02 2022-04-01 中国电子科技集团公司第十八研究所 Equipotential device for wafer electroplating, wafer electroplating device and electroplating method
CN115896881A (en) * 2022-11-17 2023-04-04 安徽建筑大学 Semiconductor wafer capable of preventing deviation, pretreatment method and electroplating system thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114262918A (en) * 2021-12-02 2022-04-01 中国电子科技集团公司第十八研究所 Equipotential device for wafer electroplating, wafer electroplating device and electroplating method
CN115896881A (en) * 2022-11-17 2023-04-04 安徽建筑大学 Semiconductor wafer capable of preventing deviation, pretreatment method and electroplating system thereof

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