CN114351224B - Electroplating hanger and electroplating device - Google Patents
Electroplating hanger and electroplating device Download PDFInfo
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- CN114351224B CN114351224B CN202110289986.9A CN202110289986A CN114351224B CN 114351224 B CN114351224 B CN 114351224B CN 202110289986 A CN202110289986 A CN 202110289986A CN 114351224 B CN114351224 B CN 114351224B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The application discloses an electroplating hanger and an electroplating device, wherein the electroplating hanger comprises a downloading plate, a first conductive structure, a second conductive structure, a first fixing structure, a second fixing structure, a cathode interface and a first rubber ring, wherein a wafer groove for placing a wafer is formed in the downloading plate, and the first conductive structure and the second conductive structure are different in size and are arranged at the bottom of the wafer groove; the first fixing structure is used for fixing a large-size first wafer in the wafer groove, and the second fixing structure is used for fixing a small-size second wafer between the first rubber rings. Through the design, the electroplating rack can electroplate wafers of different types, so that the applicability of the electroplating rack is greatly improved, and the cost input on the electroplating rack is saved; in addition, the electroplating hanger is also provided with the first rubber ring, so that when a small-size wafer is placed into the wafer groove, the wafer can be limited by the first rubber ring, and therefore the wafer does not need to be worried about moving in the wafer groove.
Description
Technical Field
The application relates to the field of wafer electroplating, in particular to an electroplating hanger and an electroplating device.
Background
In the production process of the wafer, electroplating treatment is required; when the wafer is electroplated, the auxiliary matching is needed by using the hanging tool, so that the wafer is placed into the electroplating liquid for electroplating. Electroplating refers to that an electrolytic reaction is carried out in an electroplating solution under the action of external direct current so as to deposit a metal or alloy layer on the surface of a wafer. When electroplating is carried out, the anode of the power supply is electrically connected to the electroplating solution, and the cathode of the power supply is connected with the wafer; when the current is conducted, positive cations in the plating solution migrate toward the cathode of the circuit, undergoing a reduction reaction on the surface of the wafer, and forming a plating layer overlying the surface of the wafer.
At present, one electroplating rack can only plate one type of wafer, and when different types of wafers are electroplated, different electroplating racks are replaced, so that the cost of the electroplating rack is greatly increased.
Disclosure of Invention
The application aims to provide a plating rack and a plating device which can plate various types of wafers.
The application also discloses an electroplating hanger for the wafer, which comprises a downloading plate, a first conductive structure, a second conductive structure, a first fixing structure, a second fixing structure, a cathode interface and a first rubber ring, wherein a wafer groove for placing the wafer is formed in the downloading plate, and the first conductive structure is of an annular structure and is arranged at the bottom of the wafer groove; the second conductive structure is arranged at the bottom of the wafer groove and is positioned between the inner rings of the first conductive structure; the first fixing structure is used for fixing a large-size first wafer in the wafer groove, enabling the back surface of the first wafer to be attached to the first conductive structure, sealing the back surface of the first wafer, and enabling the front surface of the first wafer to be exposed; the second fixing structure is used for fixing a second wafer with a small size in the wafer groove, is used for enabling the back surface of the second wafer to be attached to the second conductive structure, and seals the back surface of the second wafer so that the front surface of the second wafer is exposed; the cathode interface is fixed on the downloading plate, and one end of the cathode interface is electrically connected with the first conductive structure and the second conductive structure; the first rubber ring is arranged at the bottom of the wafer groove and surrounds the second conductive structure.
Optionally, the height of the first conductive structure is greater than the height of the second conductive structure.
Optionally, the downloading board includes a first conductive groove and a second conductive groove, the first conductive groove is disposed around the second conductive groove, the first conductive groove is disposed at an edge of the first wafer groove, the first conductive structure is disposed in the first conductive groove, and the second conductive structure is disposed in the second conductive groove; the depth of the first conductive groove is smaller than that of the second conductive groove.
Optionally, the downloading board includes the second conductive groove, the external diameter of second conductive groove is less than the internal diameter of wafer groove, first conductive structure encircles the bottom edge setting of wafer groove, the second conductive structure sets up in the second conductive groove, just the thickness of first conductive structure is greater than the thickness of second conductive structure.
Optionally, the top of the first rubber ring is flush with the top of the first conductive structure.
Optionally, the first fixing structure includes a first upper cover, one end of the first upper cover is abutted to the top of the downloading board, the other end of the first upper cover is abutted to the front surface of the first wafer, the first upper cover includes a first electroplating hole, and the first electroplating hole corresponds to the front surface of the first wafer, so that the front surface of the first wafer is exposed; the second fixing structure comprises a second upper cover, one end of the second upper cover is abutted with the top of the downloading plate, the other end of the second upper cover is abutted with the front face of the second wafer, the second upper cover comprises a second electroplating hole, and the second electroplating hole corresponds to the front face of the second wafer, so that the front face of the second wafer is exposed.
Optionally, the thickness of the first wafer is smaller than the depth of the first wafer groove, the first upper cover includes a first step surface and a second step surface, the first step surface is abutted against the top of the downloading plate, and is fixed by a screw, and the second step surface is abutted against the front surface of the first wafer; the second upper cover comprises a third step surface and a fourth step surface, the third step surface is abutted with the top of the downloading plate and fixed through screws, and the fourth step surface is abutted with the front surface of the second wafer.
Optionally, the cathode interface includes a first conductive copper plate and a second conductive copper plate, where the first conductive copper plate is disposed on the front surface of the download board and is communicated with the first conductive structure through a wire; the second conductive copper plate is arranged on the back surface of the downloading plate and is communicated with the second conductive structure through a wire; the lead wire communicating the first conductive copper plate and the first conductive structure is arranged in a lead wire groove on the front face of the downloading plate, and the lead wire communicating the second conductive copper plate and the second conductive structure is arranged in a lead wire groove on the back face of the downloading plate.
Optionally, the width of the first rubber ring is greater than the thickness of the second wafer.
The application also discloses an electroplating device comprising the electroplating hanger.
Compared with the existing electroplating rack capable of electroplating wafers of one type, the electroplating rack has the advantages that the wafer grooves for placing the wafers are formed in one surface of the downloading plate, and the conductive structures and the fixing structures of different sizes are arranged in the wafer grooves, so that the electroplating rack can be used for electroplating wafers of different types, the applicability of the electroplating rack is greatly improved, and the cost investment in the electroplating rack is saved; in addition, the electroplating hanger is also provided with a first rubber ring which is arranged around the second conductive structure, so that when a small-size wafer is placed into the wafer groove, the wafer can be limited by the first rubber ring, and therefore the wafer does not need to be worried about moving in the wafer groove.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is evident that the figures in the following description are only some embodiments of the application, from which other figures can be obtained without inventive effort for a person skilled in the art. In the drawings:
FIG. 1 is a schematic view of an electroplating apparatus according to an embodiment of the present application;
FIG. 2 is a schematic plan view of an electroplating rack according to an embodiment of the present application;
FIG. 3 is a cross-sectional view corresponding to FIG. 2;
FIG. 4 is a schematic plan view of another plating rack according to an embodiment of the present application;
FIG. 5 is a cross-sectional view corresponding to FIG. 4;
FIG. 6 is a schematic cross-sectional view corresponding to FIG. 2, according to another embodiment of the present application;
fig. 7 is a schematic cross-sectional view corresponding to fig. 4 according to another embodiment of the present application.
FIG. 8 is a schematic diagram of a second conductive structure according to an embodiment of the present application;
FIG. 9 is a schematic diagram of another second conductive structure according to an embodiment of the present application;
fig. 10 is a schematic diagram of another second conductive structure according to an embodiment of the present application.
Wherein, 100, electroplating device; 200. a power supply; 210. a negative electrode; 220. a positive electrode; 300. a plating bath; 310. electroplating solution; 400. electroplating hanging tool; 410. downloading a plate; 411. a wafer groove; 4111. a first wafer slot; 4112. a second wafer groove; 412. a first conductive groove; 413. a second conductive groove; 420. a first fixed structure; 421. a first upper cover; 422. a first plated hole; 423. a first step surface; 424. a second step surface; 425. a second fixing structure; 426. a second upper cover; 427. a second plated hole; 428. a third step surface; 429. a fourth step surface; 430. a first conductive structure; 431. a second conductive structure; 432. an interface; 440. a cathode interface; 441. a first conductive copper plate; 442. a second conductive copper plate; 450. a first rubber ring; 451. a second rubber ring; 460. a first seal ring; 461. a second seal ring; 470. a screw; 480. a wire; 500. a first wafer; 510. and a second wafer.
Detailed Description
It is to be understood that the terminology used herein, the specific structural and functional details disclosed are merely representative for the purpose of describing particular embodiments, but that the application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or implicitly indicating the number of technical features indicated. Thus, unless otherwise indicated, features defining "first", "second" may include one or more such features either explicitly or implicitly; the meaning of "plurality" is two or more. The terms "comprises," "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or groups thereof may be present or added.
In addition, terms of the azimuth or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., are described based on the azimuth or relative positional relationship shown in the drawings, are merely for convenience of description of the present application, and do not indicate that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present application.
Furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The application is described in detail below with reference to the attached drawings and alternative embodiments.
As shown in fig. 1, which is a schematic view of a plating apparatus 100, the present application discloses a plating apparatus 100, wherein the plating apparatus 100 includes a power source 200, a plating tank 300, and a plating rack 400, the plating tank 300 is used for containing a plating solution 310, and the plating solution 310 is in communication with a positive electrode 220 of the power source 200; the electroplating rack 400 includes a downloading board 410, a first conductive structure 430, a second conductive structure 431, a first fixing structure 420, a second fixing structure 425, a cathode interface 440 and a first rubber ring 450, wherein a wafer slot 411 for placing a wafer is arranged on the downloading board 410, and the first conductive structure 430 is in an annular structure and is arranged at the bottom of the wafer slot 411; the second conductive structure 431 is disposed at the bottom of the wafer slot 411 and located between the inner rings of the first conductive structure 430; the first fixing structure 420 is used for fixing the large-sized first wafer 500 in the wafer slot 411, for attaching the back surface of the first wafer 500 to the first conductive structure 430, and sealing the back surface of the first wafer 500, so that the front surface of the first wafer 500 is exposed to the plating solution 310 in the plating tank 300; the second fixing structure 425 is used for fixing the second wafer 510 with a small size in the wafer slot 411, for attaching the back surface of the second wafer 510 to the second conductive structure 431, and sealing the back surface of the second wafer 510, so that the front surface of the second wafer 510 is exposed to the plating solution 310 in the plating tank 300; the cathode interface 440 is fixed on the download board 410, one end of the cathode interface 440 is electrically connected to the first conductive structure 430 and the second conductive structure 431, and the other end is electrically connected to the negative electrode 210 of the power supply 200; the first rubber ring 450 is disposed at the bottom of the wafer slot 411 and surrounds the second conductive structure 431.
At present, the cathode 210 is usually connected to the front edge of the wafer, and then electroplating is performed on the front surface of the wafer, but a seed layer is required to be formed on the front surface of the wafer, and the seed layer is used for circulating the whole wafer surface, so that the purpose of electroplating is achieved; after electroplating, the seed layer metal needs to be bitten by etching liquid, otherwise, the seed layer is a complete plane, and the chip is short-circuited. The present disclosure provides a plating apparatus 100 for a wafer, where a plating rack 400 in the plating apparatus 100 can fix the wafer and make the front surface of the wafer contact with a plating solution 310, and a conductive structure in the plating rack 400 can electrically connect the back surface of the wafer with a negative electrode 210, so as to implement plating by using the conductivity of the back surface of the wafer; because the wafer contains N-type silicon chips, PN junctions exist in the wafer, only one-way conduction of current can be realized, electrons pass through the PN junctions to reach the surface of the pad in the wafer after the back surface of the wafer is conducted, and metal ions in the plating solution are combined with electrons on the surface of the pad to generate metal simple substances to be deposited on the pad, so that a plating layer can be formed. Therefore, electroplating can be realized without paving a seed layer on the front surface of the wafer, so that the whole electroplating process can omit two steps of sputtering the seed layer and etching the sputtered layer, the process steps are simplified, and the cost is reduced. In addition, the present application can fix two kinds of wafers with different sizes in the wafer slot 411 through the corresponding fixing structures, the side wall of the first wafer slot 411 and the first rubber ring 450 limit the wafers with different sizes respectively, and connect the wafers with the corresponding conductive structures, so that the electroplating rack 400 in the electroplating device 100 can electroplate the wafers with different sizes, and the applicability of the electroplating device 100 is improved.
As shown in fig. 2-5, two planar and cross-sectional views of a plating rack 400 are shown, respectively. As another embodiment of the present application, there is further disclosed a plating rack 400, where the plating rack 400 is used in the plating apparatus 100, the plating rack 400 includes a download plate 410, a first conductive structure 430, a second conductive structure 431, a first fixing structure 420, a second fixing structure 425, a cathode interface 440, and a first rubber ring 450, the download plate 410 is provided with a wafer slot 411 for placing a wafer, and the first conductive structure 430 is in a ring structure and is disposed at the bottom of the wafer slot 411; the second conductive structure 431 is disposed at the bottom of the wafer slot 411 and located between the inner rings of the first conductive structure 430; the first fixing structure 420 is used for fixing the large-sized first wafer 500 in the wafer slot 411, for attaching the back surface of the first wafer 500 to the first conductive structure 430, and sealing the back surface of the first wafer 500, so that the front surface of the first wafer 500 is exposed; the second fixing structure 425 is used for fixing the second wafer 510 with a small size in the wafer slot 411, for attaching the back surface of the second wafer 510 to the second conductive structure 431, and sealing the back surface of the second wafer 510, so that the front surface of the second wafer 510 is exposed; the cathode interface 440 is fixed on the download board 410, and one end of the cathode interface 440 is electrically connected with the first conductive structure 430 and the second conductive structure 431; the first rubber ring 450 is disposed at the bottom of the wafer slot 411 and surrounds the second conductive structure 431.
Compared with the electroplating rack 400 which is provided with the conductive structure on the same side of the wafer at present, the electroplating surface of the wafer is the same as the conductive surface. According to the application, the conductive structure is arranged at the bottom of the wafer slot 411, so that the wafer is placed in the wafer slot 411, the back surface of the wafer is attached to the conductive structure, and the conductive structure is connected with the cathode interface 440 through a wire; when the wafer is electroplated, the cathode interface 440 is electrically connected to the negative electrode 210 of the power source 200 in the electroplating apparatus 100, so that the back surface of the wafer is communicated with the negative electrode 210. After the wafer is placed in the wafer slot 411, the wafer slot 411 limits the wafer to prevent the wafer from moving, and the wafer is fixed by a fixing structure; the fixing structure is disposed on the front surface of the wafer, so that the front surface of the wafer leaks out, and the plating solution 310 in the plating apparatus 100 can contact with the front surface of the wafer, so that the front surface of the wafer is plated. When the back surface of the wafer is conductive, electrons pass through PN junctions in the wafer to reach the surface of the pad in the wafer, and metal ions in the plating solution are combined with electrons on the surface of the pad to generate metal simple substances to be deposited on the pad, so that a plating layer is formed on the front surface of the wafer; however, when the electroplating rack 400 is used for electroplating a wafer, a metal seed layer is not required to be formed on the front surface of the wafer to conduct the pad on the front surface of the wafer, so that two steps of sputtering the seed layer and etching the sputtered layer can be reduced, and the process steps are simplified. In addition, the present application can fix two kinds of wafers with different sizes in the wafer slot 411 through the corresponding fixing structures, the side wall of the first wafer slot 411 and the first rubber ring 450 limit the wafers with different sizes respectively, and connect the wafers with the corresponding conductive structures, so that the electroplating rack 400 can electroplate the wafers with different sizes, and the applicability of the electroplating rack 400 is improved.
Specifically, the height of the first conductive structure 430 is greater than the height of the second conductive structure 431; after the first wafer 500 is placed in the wafer slot 411, the back surface of the first wafer 500 abuts against the first conductive structure 430 and does not contact the second conductive structure 431, thereby preventing the plating of the first wafer 500 from being disturbed. Moreover, the top of the first rubber ring 450 is flush with the top of the first conductive structure 430, and the first rubber ring 450 can support the first wafer 500, so that the middle of the first wafer 500 is not suspended, thereby improving the stability of the first wafer 500. Specifically, a first conductive groove 412 and a second conductive groove 413 may be disposed at the bottom of the wafer slot 411, the first conductive structure 430 is disposed in the first conductive groove 412, the second conductive structure 431 is disposed in the second conductive groove 413, and the depth of the first conductive groove 412 is smaller than that of the second conductive groove 413, so that the first conductive structure 430 and the second conductive structure 431 meet the above-mentioned height requirement; the second conductive groove 413 may be only provided, the height of the first conductive structure 430 may be increased, the height of the first conductive structure 430 may be greater than the height of the second conductive structure 431, or a combination of the above solutions may be provided; as long as the following conditions can be satisfied: the first conductive structure 430 is bonded to the back side of the first wafer 500, the second conductive structure 431 is bonded to the back side of the second wafer 510, and the first rubber ring 450 is flush with the top of the first conductive structure 430.
In order to improve the limit effect of the first rubber ring 450 on the second wafer 510, in the present application, the width of the first rubber ring 450 is not smaller than the thickness of the second wafer 510, and the height of the first rubber ring 450 is not smaller than the thickness of the second wafer 510, and by setting the width and the height of the first rubber ring 450, the stability of the first rubber ring 450 is improved, so that the first rubber ring 450 is not easy to deform, and the stability of the first rubber ring 450 is improved, thereby improving the limit effect of the first rubber ring 450 on the second wafer 510.
As shown in fig. 6-7, which are schematic cross-sectional views of another electroplating rack 400, as another embodiment of the present application, another electroplating rack 400 for a wafer is disclosed, where the electroplating rack 400 is used in the electroplating apparatus 100, the electroplating rack 400 includes a carrier 410, a first conductive structure 430, a second conductive structure 431, a first fixing structure 420, a second fixing structure 425, and a cathode interface 440, a wafer slot 411 for placing the wafer is provided on the carrier 410, and the first conductive structure 430 is a ring structure and is disposed at the bottom of the wafer slot 411; the second conductive structure 431 is disposed at the bottom of the wafer slot 411 and located between the inner rings of the first conductive structure 430; the first fixing structure 420 fixes the large-sized first wafer 500 in the wafer slot 411, so that the back surface of the first wafer 500 is attached to the first conductive structure 430 and the front surface of the first wafer 500 is exposed; the second fixing structure 425 fixes the second wafer 510 with a small size in the wafer slot 411, so that the back surface of the second wafer 510 is attached to the second conductive structure 431 and the front surface of the second wafer 510 is exposed; the cathode interface 440 is fixed on the download board 410, and one end of the cathode interface 440 is electrically connected to the first conductive structure 430 and the second conductive structure 431.
Specifically, the wafer slots 411 include a first wafer slot 4111 and a second wafer slot 4112 with different sizes, the second wafer slot 4112 is disposed inside the first wafer slot 4111, and the depth of the second wafer slot 4112 is greater than the depth of the first wafer slot 4111; the first wafer 500 is disposed in the first wafer groove 4111 and abuts against the sidewall of the first wafer groove 4111; the second wafer 510 is disposed in the second wafer groove 4112 and abuts against the sidewall of the second wafer groove 4112; the first conductive structure 430 is disposed at the bottom of the first wafer groove 4111 and is attached to the back surface of the first wafer 500, and the second conductive structure 431 is disposed at the bottom of the second wafer groove 4112 and is attached to the back surface of the second wafer 510; the first fixing structure 420 fixes the first wafer 500 in the first wafer groove 4111, and the second fixing structure 425 fixes the second wafer 510 in the second wafer groove 4112.
After the second wafer groove 4112 is disposed inside the first wafer groove 4111, since the bottom of the first wafer groove 4111 is lower than the bottom of the second wafer groove 4112, after the first wafer 500 is placed into the first wafer groove 4111, the second conductive structure 431 will not be attached to the back surface of the first wafer 500, so that the electroplating of the first wafer 500 will not be disturbed; and the first wafer 500 covers the second wafer groove 4112, so that the second wafer groove 4112 has a good sealing effect, and therefore, an additional sealing structure is not required to be additionally arranged in the second wafer groove 4112.
When the first wafer 500 with a larger size is electroplated, the first wafer 500 is placed into the first wafer groove 4111, and at this time, the side wall of the first wafer groove 4111 limits the first wafer 500, so as to prevent the first wafer 500 from moving. Then, the first wafer 500 is fixed by the first fixing structure 420, where the first fixing structure 420 may be a cover body, or may be a structure of the downloading board 410, and when the first fixing structure 420 is a cover body, the first structure includes a first upper cover 421, one end of the first upper cover 421 abuts against the top of the downloading board 410, and the other end abuts against the front surface of the first wafer 500, the first upper cover 421 includes a first plating hole 422, and the first plating hole 422 corresponds to the front surface of the first wafer 500, so that the front surface of the first wafer 500 leaks out.
When the second wafer 510 with smaller size is electroplated, the second wafer 510 is placed into the second wafer slot 4112, and the side wall of the first wafer slot 4111 limits the first wafer 500 to prevent the first wafer 500 from moving. Then, the second wafer 510 is fixed by the second fixing structure 425, where the second fixing structure 425 may be a cover body, or may be a structure of the downloading board 410 itself, and when the second fixing structure 425 is a cover body, the second fixing structure 425 includes a second upper cover 426, one end of the second upper cover 426 abuts against the top of the downloading board 410, and the other end abuts against the front surface of the second wafer 510, the second upper cover 426 includes a second plating hole 427, and the second plating hole 427 corresponds to the front surface of the second wafer 510, so that the front surface of the second wafer 510 leaks out.
The edges of the first upper cover 421 and the second upper cover 426 have the same size and the same connection manner with the download board 410; the difference is that the plating holes of the two upper covers are different and the contact positions with the wafer are different, that is, the diameter of the first plating hole 422 of the first upper cover 421 is larger than that of the second plating hole 426, the first upper cover 421 is in contact with the edge of the first wafer 500, and the second upper cover 426 is in contact with the edge of the second wafer 510. After the first wafer 500 is held by the first upper cover 421, the plating solution 310 can only contact the front surface of the first wafer 500; after the second wafer 510 is held by the second cover 426, the plating solution 310 can only contact the front surface of the second wafer, and the second cover 426 shields the first conductive structure 430. The fixing manner of the first upper cover 421, the second upper cover 426 and the downloading plate 410 may be fixed by a screw 470, or may be a threaded or snap connection manner, when the upper cover is replaced, the connection positions and connection manners of the first upper cover 421, the second upper cover 426 and the downloading plate 410 are the same, so that the upper cover replacement process is more convenient.
The thickness of the first wafer 500 is smaller than the depth of the first wafer groove 4111, the first upper cover 421 includes a first step surface 423 and a second step surface 424, the first step surface 423 is abutted against the top of the download plate 410 and fixed by a screw 470, and the second step surface 424 is abutted against the front surface of the first wafer 500; the second upper cover 426 includes a third step surface 428 and a fourth step surface 429, wherein the third step surface 428 abuts against the top of the lower plate 410 and is fixed by a screw 470, and the fourth step surface 429 abuts against the front surface of the second wafer 510. By making the height of the wafer lower than the height of the top of the downloading plate 410, the thickness of the abutting part of the upper cover and the wafer is greater than the thickness of the abutting part of the upper cover and the downloading plate 410, so that the part of the upper cover connecting the two step surfaces abuts against the side wall of the wafer slot 411, thereby increasing the sealing effect of the electroplating rack 400 and improving the stability of the upper cover.
In order to improve the sealing effect of the electroplating hanger 400, the application further provides a sealing structure, namely, the electroplating hanger 400 comprises a first sealing ring 460 and a second sealing ring 461, one end of the first sealing ring 460 is connected with the first step surface 423 or the third step surface 428, and the other end is abutted with the top of the download board 410; one end of the second sealing ring 461 is connected to the second step surface 424 or the fourth step surface 429, and the other end abuts against the front surface of the first wafer 500 or the second wafer 510. Thus, the sealing rings are arranged at the two ends of the upper cover, and the electroplating solution 310 cannot flow into the wafer slot 411 along the gaps between the two ends of the upper cover, the downloading plate 410 and the wafer; after the second sealing ring 461 is abutted against the wafer, a buffer effect is provided between the upper cover and the wafer, so that the upper cover is prevented from scraping the surface of the wafer.
For the bottom of the wafer, the application is also provided with a buffer structure, that is, the electroplating rack 400 comprises a first rubber ring 450 and a second rubber ring 451, wherein the first rubber ring 450 is arranged at the bottom of the first wafer groove 4111 and is abutted against the back surface of the first wafer 500; the second rubber ring 451 is disposed at the bottom of the second wafer groove 4112, and abuts against the back surface of the second wafer 510. When the first wafer 500 is placed in the first wafer groove 4111, the back surface of the first wafer 500 abuts against the first rubber ring 450, and the first rubber ring 450 applies a buffer action to the first wafer 500, so that the first wafer 500 and the bottom of the first wafer groove 4111 are prevented from being worn greatly; when the second wafer 510 is placed in the second wafer groove 4112, the back surface of the second wafer 510 abuts against the second rubber ring 451, and the second rubber ring 451 applies a buffer action to the second wafer 510, so that the second wafer 510 and the bottom of the second wafer groove 4112 are prevented from being worn greatly.
Moreover, the first rubber ring 450 has the same inner diameter as the second wafer groove 4112 and has the same center as the second wafer groove 4112; the thickness of the second wafer 510 is greater than the depth of the second wafer groove 4112. The second rubber ring 451 and the second wafer groove 4112 limit the second wafer 510 at the same time, so as to prevent the second wafer 510 from being taken and put; in the process of placing the first wafer 500, the back surface of the first wafer 500 contacts with the top edge of the second wafer groove 4112, which easily causes the back surface of the second wafer 510 to be scratched, so that the first rubber ring 450 is arranged outside the top edge of the second wafer groove 4112, and the first rubber ring 450 can separate the back surface of the first wafer 500 from the top edge of the second wafer groove 4112, so that the first wafer 500 is further protected.
In the present embodiment, the first conductive structure 430 is flush with the bottom of the first wafer groove 4111, and the second conductive structure 431 is flush with the bottom of the second wafer groove 4112, so that the back surface of the wafer is uniformly stressed and is not easy to break. Specifically, the download board 410 includes a first conductive groove 412 and a second conductive groove 413, the first conductive groove 412 is disposed at an edge of the first wafer groove 4111, the first conductive structure 430 is disposed in the first conductive groove 412, and a thickness of the first conductive structure 430 is equal to a depth of the first conductive groove 412; the second conductive groove 413 is disposed at an edge of the second wafer groove 4112, the second conductive structure 431 is disposed in the second conductive groove 413, and a thickness of the second conductive structure 431 is equal to a depth of the second conductive groove 413.
The first conductive structure 430 is annular in shape and is attached to the back edge of the first wafer 500. However, the shape of the second conductive structure 431 is not limited, as shown in fig. 8-10, which are schematic views of three different second conductive structures 431, respectively, in fig. 8, the second conductive structure 431 may be a ring structure, and is attached to the back edge of the second wafer 510; in fig. 9, the second conductive structure 431 includes a plurality of concentric rings, and two adjacent concentric rings are connected by a metal wire, so that compared with the scheme of the conductive structure in fig. 8, the conductive structure 1 in fig. 9 increases the contact area with the back surface of the wafer, which is beneficial to improving the conductive efficiency and electroplating efficiency of the wafer; in fig. 10, the second conductive structure 431 is a complete plate-like structure, i.e., there is no hollow in the middle of the second conductive structure 431, and the edge of the second conductive structure 431 coincides with the edge of the wafer, so that the bonding area between the back surface of the wafer and the second conductive structure 431 is the largest, and the conducting effect is the best.
The edges of the first conductive structure 430 and the second conductive structure 431 are provided with a plurality of interfaces 432, and each of the interfaces 432 is electrically connected to the cathode interface 440 through a wire. The cathode interface 440 may be a conductive copper plate, on which all the wires are connected to the interface 432 through wires, and which conducts all the interfaces 432 of the first conductive structure 430 or the second conductive structure 431 at the same time; the number of the interfaces 432 of the first conductive structure 430 or the second conductive structure 431 is 4, and the interfaces 432 are uniformly distributed on the outer side of the first conductive structure 430 or the second conductive structure 431, and the interfaces 432 can be embedded into the downloading board 410, i.e. the interfaces 432 are arranged on the outer side of the wafer slot 411, so that the protection effect on the interfaces 432 can be improved, and the interfaces 432 are prevented from being broken. Each surface of the downloading board 410 is provided with 4 wiring grooves, each wiring groove is provided with a wire for connecting the interface 432 and the conductive copper plate, mutual interference between the wires is prevented, and the attractive effect of the hanging tool is improved; after the wires are arranged in the wiring grooves, a protective layer is paved in the wiring grooves, so that the wires can be fixed, and the corrosion influence of the electroplating solution 310 on the wires in the electroplating process can be prevented; the protection layer may be transparent, so that the connection condition between the first conductive structure 430, the second conductive structure 431 and the conductive copper plate can be observed at any time, and the problem of a certain wire is prevented from causing the non-uniform conduction of the conductive structure, and the electroplating effect of the wafer is affected.
Of course, in the first embodiment, the first fixing structure 420, the second fixing structure 425, the second conductive structure 431, the first sealing ring 460 and the second sealing ring 461 may be added as well, and specific reference may be made to the schemes in the above embodiments, which are not described herein.
In all the above embodiments, the cathode interface 440 includes a first conductive copper plate 441 and a second conductive copper plate 442, where the first conductive copper plate 441 is disposed on the front surface of the download board 410 and is in communication with the first conductive structure 430 through a wire; the second conductive copper plate 442 is disposed on the back surface of the download board 410 and is in communication with the second conductive structure 431 through a wire; wherein, the wires communicating the first conductive copper plate 441 and the first conductive structure 430 are disposed in the wire grooves on the front surface of the download board 410, and the wires communicating the second conductive copper plate 442 and the second conductive structure 431 are disposed in the wire grooves on the back surface of the download board 410. The design ensures that the metal wires are distributed on the front surface and the back surface of the download board 410 at the same time, so that the interference among the metal wires is reduced; and through electroplating first wafer 500 and second wafer 510 respectively to first electrically conductive copper 441 and second electrically conductive copper 442, can apply different voltages to two kinds of wafers, produce different electroplating effect, can satisfy user's multiple demand to the application scope of product has been improved. In addition, only one conductive copper plate may be provided, and the first conductive structure 430 and the second conductive structure 431 are connected to the one conductive copper plate, and a gate switch is disposed in the conductive copper plate, so that when the wafers with different sizes are electroplated, different conductive structures can be switched.
The above description of the application in connection with specific alternative embodiments is further detailed and it is not intended that the application be limited to the specific embodiments disclosed. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the application, and these should be considered to be within the scope of the application.
Claims (6)
1. An electroplating hanger, comprising:
the wafer loading device comprises a loading plate, wherein a wafer groove for placing a wafer is formed in the loading plate;
the first conductive structure is of an annular structure and is arranged at the bottom of the wafer groove;
the second conductive structure is arranged at the bottom of the wafer groove and is positioned between the inner rings of the first conductive structure;
the first fixing structure is used for fixing a large-size first wafer in the wafer groove, enabling the back surface of the first wafer to be attached to the first conductive structure, sealing the back surface of the first wafer, and enabling the front surface of the first wafer to be exposed;
the second fixing structure is used for fixing a second wafer with a small size in the wafer groove, enabling the back surface of the second wafer to be attached to the second conductive structure, sealing the back surface of the second wafer, and enabling the front surface of the second wafer to be exposed;
the cathode interface is fixed on the downloading plate, and one end of the cathode interface is electrically connected with the first conductive structure and the second conductive structure; and
the first rubber ring is arranged at the bottom of the wafer groove and surrounds the second conductive structure;
the height of the first conductive structure is larger than that of the second conductive structure, and the top of the first rubber ring is level with the top of the first conductive structure;
the cathode interface comprises a first conductive copper plate and a second conductive copper plate, and the first conductive copper plate is arranged on the front surface of the downloading plate and is communicated with the first conductive structure through a wire; the second conductive copper plate is arranged on the back surface of the downloading plate and is communicated with the second conductive structure through a wire;
the lead wire for communicating the first conductive copper plate and the first conductive structure is arranged in a lead wire groove on the front surface of the downloading plate, and the lead wire for communicating the second conductive copper plate and the second conductive structure is arranged in a lead wire groove on the back surface of the downloading plate;
the wafer comprises an N-type silicon wafer, the first conductive structure or the second conductive structure is attached to the back surface of the N-type silicon wafer, and a bonding pad is arranged on the front surface of the wafer;
the first fixing structure comprises a first upper cover, one end of the first upper cover is abutted with the top of the downloading plate, the other end of the first upper cover is abutted with the front surface of the first wafer, the first upper cover comprises a first electroplating hole, and the first electroplating hole corresponds to the front surface of the first wafer, so that the front surface of the first wafer is exposed;
the second fixing structure comprises a second upper cover, one end of the second upper cover is abutted with the top of the downloading plate, the other end of the second upper cover is abutted with the front face of the second wafer, the second upper cover comprises a second electroplating hole, and the second electroplating hole corresponds to the front face of the second wafer, so that the front face of the second wafer is exposed.
2. The plating rack of claim 1, wherein the download plate comprises a first conductive slot and a second conductive slot, the first conductive slot disposed around the second conductive slot, the first conductive slot disposed at an edge of the first wafer slot, the first conductive structure disposed within the first conductive slot, the second conductive structure disposed within the second conductive slot;
the depth of the first conductive groove is smaller than that of the second conductive groove.
3. The plating rack of claim 1, wherein the download plate comprises a second conductive groove having an outer diameter smaller than an inner diameter of the wafer groove, the first conductive structure is disposed around a bottom edge of the wafer groove, the second conductive structure is disposed within the second conductive groove, and a thickness of the first conductive structure is greater than a thickness of the second conductive structure.
4. The plating rack of claim 1, wherein the first wafer has a thickness less than the depth of the first wafer slot, the first upper cover comprises a first step surface and a second step surface, the first step surface is abutted against the top of the download plate, and the second step surface is abutted against the front surface of the first wafer by screw fixation;
the second upper cover comprises a third step surface and a fourth step surface, the third step surface is abutted with the top of the downloading plate and fixed through screws, and the fourth step surface is abutted with the front surface of the second wafer.
5. The plating hanger of claim 1, wherein a width of said first rubber ring is greater than a thickness of said second wafer.
6. An electroplating device comprising an electroplating rack as claimed in any one of claims 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110289986.9A CN114351224B (en) | 2021-03-18 | 2021-03-18 | Electroplating hanger and electroplating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110289986.9A CN114351224B (en) | 2021-03-18 | 2021-03-18 | Electroplating hanger and electroplating device |
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| CN114351224B true CN114351224B (en) | 2023-08-25 |
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|---|---|
| CN114351224A (en) | 2022-04-15 |
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