CN206376020U - A kind of electroplate jig - Google Patents
A kind of electroplate jig Download PDFInfo
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- CN206376020U CN206376020U CN201621492738.5U CN201621492738U CN206376020U CN 206376020 U CN206376020 U CN 206376020U CN 201621492738 U CN201621492738 U CN 201621492738U CN 206376020 U CN206376020 U CN 206376020U
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- bossy body
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- electroplate jig
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Abstract
This application discloses a kind of electroplate jig, including:Conductive structure and the insulating barrier being coated on around the conductive structure;The conductive structure includes the first bossy body, and the insulating barrier has the first opening, and first bossy body exposes from the described first opening, and the insulating barrier is sealed between first bossy body at first opening and coordinated;Exposing first bossy body of first opening can be inserted directly into element to be plated, and pass through the photoresist layer on the element top layer to be plated, reach the conductive layer of the element to be plated below photoresist layer and contact, turning circuit is formed, while forming sealing structure between first bossy body and the element to be plated.A kind of electroplate jig of the application effectively prevent plating, reduces work difficulty, improves processing quality, while extending the service life of electroplate jig.
Description
Technical field
The disclosure relates generally to technical field of semiconductors, and in particular to the encapsulation technology field of semiconductor, more particularly to one
Plant electroplate jig.
Background technology
At present, when semiconductor wafer level packaging or salient point are manufactured, it is necessary in the metal of crystal column surface formation design salient point
Circuit or metal salient point, the metallic circuit or metal salient point are typically realized using electric plating method.Detailed process is:First,
Need to pass through the metal seed layer required for one layer of plating of method formation of physical vapour deposition (PVD) in crystal column surface.And in metal kind
Photoresist layer (positivity photoresistance or the negativity photoresistance, typically by light of layout are formed with sublayer by litho pattern transfer method
Quick material is made).Then, according to electroplating technology requirement, it is necessary in the crystal round fringes containing this layer of positivity photoresistance or negativity photoresistance
The annular metallic region of negative electrode is formed, i.e., the photoresistance that above-mentioned light-sensitive material is made is got rid of at crystal round fringes, exposes an annular gold
Belong to Seed Layer, that is, form the endless metal region, make the current-carrying part of electroplate jig and the endless metal region formed
Contact is fixed.Finally the above-mentioned semiconductor crystal wafer being fixed together and electroplate jig are immersed in electrolytic cell, electroplate jig
Conductive electrode is contacted with the annular metallic region of above-mentioned negative electrode and power anode respectively, and closing for plating is collectively forming with electrolyte
Circuit is closed, the photoresistance that light-sensitive material is made by exposure imaging after the completion of plating is eliminated, and above-mentioned litho pattern transfer method
Required metallic circuit or metal salient point can be formed after the layout parcel plating of formation on a semiconductor wafer.
In the prior art, the electroplate jig used in the electroplating technology is disk electroplate jig, and its structure is:Such as Fig. 1 and
Shown in Fig. 2, disk electroplate jig includes plastic insulating layer 105 sealedly protection conductive electrode 104, the first of conductive electrode 104
Salient point 108 exposes outside plastic insulating layer 105, while also to extend the second salient point 107 convex described first for plastic insulating layer 105
Around point 108.During concrete application, the fit system of electroplate jig and wafer is as shown in figure 3, wafer 101 (element to be plated) is put
It is placed between electroplate jig and seal disc 109, makes first salient point 108 and the annular metallic region of negative electrode on wafer 101
103 contacts.It is tight by the photoresist layer 102 (light-sensitive material is made) of second salient point 107 and wafer 101 in electroplating process
Contiguity is touched forms one layer of sealing ring in the inner side in endless metal region 103, by the surface to be plated of wafer 101 and endless metal region
103 keep apart, and the seal disc 109 forms one layer of sealing ring in the outside in endless metal region.Inside and outside two sealings
Circle jointly separates endless metal region and electroplate liquid, to prevent plating.Because the prior art is by second salient point
107 are brought into close contact to protect electroplate liquid not penetrate into wafer 101 from gap therebetween with the photoresist layer 102 on the surface of wafer 101
The endless metal region 103 at edge, prevents plating phenomenon, and this laminating is contact of the line with plane, is fully relied on therebetween
Thrust sealing, it is easy to because plane deformation or pressure not enough gap occur, therefore the electroplate jig of this structure is easy
Cause plating;Meanwhile, making required precision of the structure to the endless metal region 103 at the edge of wafer 101 is higher, if ring
The manufacture of shape metallic conduction area is unqualified, then plating can be caused abnormal, and processing cost is very high;In addition, this electroplate jig because
Plating is abnormal and frequently repairs, thus needs often to change, and the life-span is shorter.
Utility model content
In view of drawbacks described above of the prior art or deficiency, expect to provide a kind of electroplate jig, can avoid plating situation,
The requirement on machining accuracy to wafer is reduced, while extending the service life of electroplate jig.
Embodiments herein provides a kind of electroplate jig, including:Conductive structure and it is coated on around the conductive structure
Insulating barrier;
The conductive structure includes the first bossy body, and the insulating barrier has the first opening, and first bossy body is from institute
State the first opening to expose, the insulating barrier is sealed at first opening between first bossy body to be coordinated;
Exposing first bossy body of first opening can be inserted directly into element to be plated, through the member to be plated
The photoresist layer on part top layer, reaches the conductive layer of the element to be plated below photoresist layer and contacts, form electric conduction
Road, while forming sealing structure between first bossy body and the element to be plated.
The purpose of the application and solve its technical problem and can also be applied to the following technical measures to achieve further.
Preferably, the longitudinal section of first bossy body be taper, and first bossy body cross-sectional area along its
The direction for being longitudinally inserted into element to be plated is gradually reduced.
Preferably, the end rounding of first bossy body.
Preferably, the conductive structure also includes the second bossy body, and the insulating barrier also has the second opening, described second
Bossy body exposes from the described second opening, and the insulating barrier is sealed at second opening with second bossy body to be coordinated;
Second bossy body and the anode of external power source exposed from the described second opening is connected.
Preferably, first bossy body and second bossy body are in the homonymy of the conductive structure.
Preferably, the conductive structure and the encirclement structure of insulating barrier formation include first area, and described first is convex
Go out body and be in the first area;
The outline of the first area is disc, and first bossy body is to extend from the disc of the first area
The annular bossy body gone out, and the central shaft of first bossy body is conllinear with the central shaft of the first area.
Preferably, the conductive structure and the encirclement structure of insulating barrier formation include adjacent first area and second
Region, first bossy body is in the first area, and second bossy body is in the second area;
The conductive structure of the conductive structure of the first area and the second area connects in the inside of the encirclement structure
Connect.
Preferably, the outline of the first area is disc, and first bossy body is from the first area
The annular bossy body extended on disc, and the central shaft and the circle of the first area of the annular of first bossy body
The central shaft of piece shape is conllinear;
The outline of the second area is flat strip shaped, and second bossy body is to extend from the plane of the second area
The cylinder or cone gone out.
Preferably, the first area has centre bore.
Preferably, the conductive structure of the first area and the second area is structure as a whole;
The insulating barrier of the first area and the second area is structure as a whole.
The technical scheme provided according to embodiments herein, by the way that first bossy body of conductive structure is directly inserted
Enter in element to be plated, pass through the photoresist layer on the element top layer to be plated, reach the member to be plated below photoresist layer
The conductive layer of part and and conductive layers make contact, so as to form turning circuit, realization is electroplated to element to be plated.Simultaneously because described
First bossy body is inserted directly into photoresist layer of the photoresist layer of the element to be plated without cutting off element to be plated, therefore insertion photoresistance
It is in close contact between the first protrusion physical efficiency and the photoresist layer after layer and forms good sealing, is conducive to preventing electroplate liquid
Cause plating in the gap for immersing element to be plated and the formation of the first bossy body.Current-carrying part with electroplate jig in conventional art is with treating
The exposed metal surface of plating element directly contacts the nonmetallic surface of conducting and the insulating barrier by electroplate jig and element to be plated
Laminating carry out sealed structure and compare, conventional art easily because seal it is bad and caused by plating situation, and the technology of the application
Scheme simply and successfully avoids plating, is needed without the electroplate jig as conventional art when being connected with wafer conducting
Crystal round fringes process endless metal conduction region, so as to eliminate the making requirement to endless metal conduction region, reduce wafer
Processing work difficulty, improves processing quality, simultaneously because success rate is improved, so as to reduce using frequently for electroplate jig
Rate, therefore extend the service life of electroplate jig.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is the planar structure schematic diagram of the electroplate jig of prior art;
Fig. 2 is the cross-sectional view of the electroplate jig of prior art;
Fig. 3 is the electroplate jig of prior art and the cross-sectional view of element to be plated cooperation;
Fig. 4 is the planar structure schematic diagram for the electroplate jig that embodiments herein is provided;
Fig. 5 is the cross-sectional view for the electroplate jig that embodiments herein is provided;
Fig. 6 is the cross-sectional view that the electroplate jig and element to be plated that embodiments herein is provided coordinate.
Embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining relevant utility model, rather than the restriction to the utility model.Further need exist for explanation
, for the ease of description, the part related to utility model is illustrate only in accompanying drawing.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Fig. 4, Fig. 5 and Fig. 6 are refer to, embodiments herein provides a kind of electroplate jig, including conductive structure 10 and bag
The insulating barrier 20 overlayed on around the conductive structure 10.The conductive structure 10 includes the first bossy body 11, the insulating barrier 20
With the first opening, first bossy body 11 exposes from the described first opening, and the insulating barrier 20 is at first opening
Seal and coordinate between first bossy body 11.Exposing first bossy body 11 of first opening can be inserted directly into
In element 30 to be plated, the conductive portions contact formation turning circuit with element 30 to be plated.Specific electroplating process is to be treated by described
Plate before element 30 and electroplate jig immersion in the electrolytic solution, one layer of conductive layer is first covered on the surface of element 30 to be plated
32 (such as metal seed layer is also sputtering seed layer), then cover one layer of photoresist layer 31 (typically by light in the top of conductive layer 32
Quick material is made, such as photoresist).And be open on photoresist layer 31 according to the pattern to be electroplated, make the metal kind of the part
Sublayer is exposed.Then, first bossy body 11 from avoid the opening it is another from first pass through the table of element to be plated 30
The photoresist layer 31 of layer, reaches the conductive layer 32 of the element to be plated in the lower section of photoresist layer 31 and contacts, form conducting
Circuit.The photoresist layer 31 is made up of softer material, therefore is easy to insert first bossy body 11, meanwhile, institute
State photoresist layer 31 have well viscosity and Fast Restoration characteristic, when first bossy body 11 is inserted not but not
Make its fragmentation, and its first bossy body 11 is only wrapped up in Fast Restoration and make first bossy body 11 with it is described
Sealing well is formed between element 30 to be plated.According to electroplating principle, element 30 to be plated is negative electrode, and element 30 to be plated is controlled with plating
First bossy body 11 of tool is connected, and is connected equivalent to electroplate jig with negative electrode, then by the other end of electroplate jig and the sun of power supply
Pole is connected, it is possible to realize and element 30 to be plated is electroplated.After the completion of plating, photoresist layer (such as photoetching is scribbled to element to be plated
Glue) part be exposed and develop, then electric metal level plated thereon is peeled off together with photoresist layer.And in element 30 to be plated
Opening at due to no painting photoresist layer, therefore the coat of metal of plating forms the metal circuit pattern or other figures of needs
Case.For example, when scribing metallic circuit on a semiconductor wafer, the electroplated components 30 are to need to spread on wafer, the wafer
Last layer photoresist is repaved above layer of metal Seed Layer, metal seed layer.The metal wire to be scribed is left on a photoresist
The opening on road, it is possible to which metallic circuit is scribed in realization on a semiconductor wafer.
The photoresist layer 31 can be painted with photoresist.The technical sophistication of photoresist, kind is more.According to its chemical reaction
Mechanism and development principle, can be divided to negative photoresist and the class of positive photoresist two.Form insoluble material after illumination is negative photoresist;Conversely, right
Some solvents are insoluble, and become soluble substance after illumination is positive photoresist.Using this performance, photoresist is applied
Layer, just can be in the circuitous pattern needed for silicon chip surface is etched.
The conductive layer 32, is also metal seed layer, is the layer of conductive film set in element surface to be plated, general thick
Spend for 500 rans.Main purpose has been electric action, makes element to be plated be connected to form turning circuit with electroplate jig.
The technical scheme that embodiments herein is provided is treated by the way that first bossy body of conductive structure is inserted directly into
Plate in element, pass through the photoresist layer on the element top layer to be plated, the to be plated element of the arrival below photoresist layer
Conductive layer and and conductive layers make contact, so as to form turning circuit, realization is electroplated to element to be plated.Simultaneously because described first
Bossy body is inserted directly into photoresist layer of the photoresist layer of the element to be plated without cutting off element to be plated, therefore after insertion photoresist layer
It is in close contact between the first protrusion physical efficiency and the photoresist layer and forms good sealing, is conducive to preventing electroplate liquid from immersing
Cause plating in the gap of element to be plated and the formation of the first bossy body.With the current-carrying part and member to be plated of electroplate jig in conventional art
The exposed metal surface of part directly contacts the patch of conducting and the insulating barrier by electroplate jig and the nonmetallic surface of element to be plated
Close and carry out sealed structure and compare, conventional art easily because seal it is bad and caused by plating situation, and the technical scheme of the application
Plating simply and is successfully avoided, is needed without the electroplate jig as conventional art when being connected with wafer conducting in wafer
Edge processes endless metal conduction region, so as to eliminate the making requirement to endless metal conduction region, reduces the processing of wafer
Work difficulty, improves processing quality, simultaneously because success rate is improved, so that the frequency of use of electroplate jig is reduced, because
This extends the service life of electroplate jig.
Preferably, as shown in Figure 5 and Figure 6, first bossy body 11 can be pyramidal structure, i.e., described first bossy body
11 longitudinal section can be for taper or close to tapered form.And the end for making first bossy body 11 is the taper knot
The small end of structure, i.e., the cross-sectional area of described first bossy body 11 is gradually reduced along its direction for being longitudinally inserted into element 30 to be plated.This
Planting up big and down small planform is conducive to the small end edge of first bossy body 11 to be longitudinally inserted into the light of the element to be plated 30
Resistance layer 31.Need exist for explanation, the end of first bossy body 11 refer to its after the conductive structure 10 stretching from
The one end of the conductive structure 10 farther out.
Preferably, as shown in Figure 5 and Figure 6, the end of first bossy body 11 can do rounding processing.For example can be by
Circular arc is made in the end of first bossy body 11, makes its surface smoothly attractive in appearance.
Preferably, as shown in Figure 4, Figure 5 and Figure 6, the encirclement structure of conductive structure 10 and the insulating barrier 20 formation
First area 001 can be included, and first bossy body 11 is in the first area 001.Further, described first
The outline in region 001 can be disc, first bossy body 11 can be annular bossy body, and it is described first protrusion
The central shaft of body 11 is conllinear with the central shaft of the first area 001.
Preferably, as shown in Figure 4, Figure 5 and Figure 6, the conductive structure 10 can also include the second bossy body 12, meanwhile,
The insulating barrier 20 also has the second opening, and second bossy body 12 exposes from the described second opening, and the insulating barrier 20 exists
Seal and coordinate with second bossy body 12 at second opening.Second bossy body 12 exposed from the described second opening
It is connected for the anode with external power source.So, conductive structure is connected by the first bossy body 11 with element 30 (negative electrode) to be plated,
It is connected by the second bossy body 12 with the anode of external power source, its closed-loop path immersed needed for electrolyte formation electrolysis.
Preferably, as shown in Figure 4, Figure 5 and Figure 6, first bossy body 11 and second bossy body 12 may be at
The homonymy of the conductive structure 10.Certainly, being not intended to limit second bossy body 12 must be same with first bossy body 11
Side is set, when being arranged on heteropleural from principle for it is also possible, simply to be designed according to the need for concrete structure.
As shown in Figure 4, Figure 5 and Figure 6, when the electroplate jig is simultaneously including first bossy body 11 and described second convex
When going out body 12, the encirclement structure of conductive structure 10 and the insulating barrier 20 formation can include adjacent first area 001
With second area 002, also, first bossy body 11 be in the first area 001, second bossy body 12 be in institute
State second area 002.The conductive structure of the first area 001 and the conductive structure of the second area 002 are surrounded described
The inside connection of structure, forms turning circuit.Further, the outline of the first area 001 can be disc, described
First bossy body 11 is the annular bossy body that extends from the disc of the first area 001, and first bossy body
The central shaft of 11 annular is conllinear with the central shaft of the disc of the first area 001.And the second area 002 is outer
Profile can be flat strip shaped, and second bossy body 12 is the cylinder or cone extended from the plane of the second area 002,
For example, cylinder, square cylinder, cone, pyramid etc., or can also be the shape close to cylinder or centrum.By institute
State second area 002 and the first area 001 is adjacent, therefore the first area 001 and the second area 002 are common
Form the spoon shape shown in Fig. 4.Preferably, in order that manufacture craft is simple, the first area 001 and the second area
002 conductive structure can be structure as a whole;Meanwhile, the insulating barrier of the first area 001 and the second area 002 is one
Body structure.
Preferably, a centre bore 30 can be opened up at the center of the first area 001, to form the dipping face of electroplate liquid
Product, and effectively lower the structural volume and weight of electroplate jig.The centre bore 30 can protrude with described the first of annular
With one heart, i.e., the annular of described first bossy body 11 is around the centre bore 30 for body 11.
Wherein, the conductive structure 10 can be made up of metal material.Because metal typically all has good electric conductivity
Can, therefore be preferred scheme as conductive structure 10 with metal material, certain conductive structure 10 can also be by other
Nonmetallic conductive material is made, and is not particularly limited here.Non-metallic conducting material has graphite etc..Those skilled in the art
The conductive structure 10 can be made from suitable material according to actual needs, be not specially limited here.
The insulating barrier 20 can be made up of plastic insulation material.Plastics are exactly that resin and additive are blended in certain temperature
The material of cooling and shaping is plastified under pressure condition.But not all plastic material all insulate, if adding in different plastics
Plus if agent composition is different, then its dielectric property (electric conductivity, insulating properties) is different.Conventional plastic insulation material example
Such as:
1. polyphenylene oxide (PPO), its by the oxidized coupling polymerization of the disubstituted phenol of 2,6- thermoplastic resin, typically
In khaki powder shape.Conventional is the polyphenylene oxide synthesized by 2,6- xylenols, with excellent combination property.
2. phenolic resin, with good electrical insulating property and heat-resisting quantity, even if at very high temperatures, can also keep
The globality of its structure and the stability of size.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.People in the art
Member should be appreciated that utility model scope involved in the application, however it is not limited to the particular combination of above-mentioned technical characteristic
Technical scheme, while should also cover in the case where not departing from the inventive concept of the utility model, by above-mentioned technical characteristic or
Its equivalent feature be combined formed by other technical schemes.Such as features described above with it is disclosed herein (but not
Be limited to) have similar functions technical characteristic carry out mutually replace formed by technical scheme.
Claims (10)
1. a kind of electroplate jig, it is characterised in that including:Conductive structure and the insulating barrier being coated on around the conductive structure;
The conductive structure includes the first bossy body, and the insulating barrier has the first opening, and first bossy body is from described the
One opening is exposed, and the insulating barrier is sealed between first bossy body at first opening and coordinated;
Exposing first bossy body of first opening can be inserted directly into element to be plated, and pass through the element to be plated
The photoresist layer on top layer, reaches the conductive layer of the element to be plated below photoresist layer and contacts, form turning circuit,
Simultaneously sealing structure is formed between first bossy body and the element to be plated.
2. electroplate jig according to claim 1, it is characterised in that the longitudinal section of first bossy body is taper, and
And the cross-sectional area of first bossy body is gradually reduced along its direction for being longitudinally inserted into element to be plated.
3. electroplate jig according to claim 1, it is characterised in that the end rounding of first bossy body.
4. the electroplate jig according to any one of claims 1 to 3, it is characterised in that the conductive structure also includes
Second bossy body, the insulating barrier also has the second opening, and second bossy body exposes from the described second opening, the insulation
Layer is sealed at second opening with second bossy body to be coordinated;Second bossy body exposed from the described second opening
It is connected with the anode of external power source.
5. electroplate jig according to claim 4, it is characterised in that at first bossy body and second bossy body
In the homonymy of the conductive structure.
6. the electroplate jig according to any one of claims 1 to 3, it is characterised in that the conductive structure and described
The encirclement structure of insulating barrier formation includes first area, and first bossy body is in the first area;
The outline of the first area is disc, and first bossy body extends for the disc from the first area
Annular bossy body, and the central shaft of first bossy body is conllinear with the central shaft of the first area.
7. electroplate jig according to claim 4, it is characterised in that
The conductive structure and the encirclements structure of insulating barrier formation include adjacent first area and second area, described the
One bossy body is in the first area, and second bossy body is in the second area;The conductive knot of the first area
Inside connection of the conductive structure of structure and the second area in the encirclement structure.
8. electroplate jig according to claim 7, it is characterised in that the outline of the first area is disc, institute
The annular bossy body for stating the first bossy body from the disc of the first area to extend, and the circle of first bossy body
The central shaft of annular is conllinear with the central shaft of the disc of the first area;
The outline of the second area is flat strip shaped, and second bossy body is to extend from the plane of the second area
Cylinder or cone.
9. electroplate jig according to claim 8, it is characterised in that the first area has centre bore.
10. electroplate jig according to claim 7, it is characterised in that
The conductive structure of the first area and the second area is structure as a whole;
The insulating barrier of the first area and the second area is structure as a whole.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114351224A (en) * | 2021-03-18 | 2022-04-15 | 青岛惠芯微电子有限公司 | Electroplating hanger and electroplating device |
CN116427002A (en) * | 2023-04-20 | 2023-07-14 | 黄山广捷表面处理科技有限公司 | Surface treatment process of pin type heat dissipation substrate and selective plating jig |
-
2016
- 2016-12-30 CN CN201621492738.5U patent/CN206376020U/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114351224A (en) * | 2021-03-18 | 2022-04-15 | 青岛惠芯微电子有限公司 | Electroplating hanger and electroplating device |
CN114351224B (en) * | 2021-03-18 | 2023-08-25 | 青岛惠芯微电子有限公司 | Electroplating hanger and electroplating device |
CN116427002A (en) * | 2023-04-20 | 2023-07-14 | 黄山广捷表面处理科技有限公司 | Surface treatment process of pin type heat dissipation substrate and selective plating jig |
CN116427002B (en) * | 2023-04-20 | 2023-10-24 | 黄山广捷表面处理科技有限公司 | Surface treatment process of pin type heat dissipation substrate and selective plating jig |
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