CN116427002B - Surface treatment process of pin type heat dissipation substrate and selective plating jig - Google Patents
Surface treatment process of pin type heat dissipation substrate and selective plating jig Download PDFInfo
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- CN116427002B CN116427002B CN202310425127.7A CN202310425127A CN116427002B CN 116427002 B CN116427002 B CN 116427002B CN 202310425127 A CN202310425127 A CN 202310425127A CN 116427002 B CN116427002 B CN 116427002B
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- heat dissipation
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- bottom plate
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 66
- 238000007747 plating Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004381 surface treatment Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 238000009713 electroplating Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000007605 air drying Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a surface treatment process of a pin type heat dissipation substrate and a selective plating jig, wherein different material layers are respectively plated on the surface of the pin type heat dissipation substrate except for an interconnection area of the upper surface of a metal bottom plate and an interconnection area of a pin fin array and the upper surface of the metal bottom plate by adopting the selective plating jig, so that the performance requirements of a new generation of packaging structure of a power module on uniformity, corrosion resistance, weldability, low interface thermal resistance and the like of surface plating layers at different positions of the pin type heat dissipation substrate are met. The pin type heat dissipation substrate processed by the method can realize high-quality connection with the chip packaging lining plate of the power module, and improves heat dissipation efficiency and working reliability of a power module product.
Description
Technical Field
The invention relates to a surface selective plating process and a selective plating jig for a pin type heat dissipation substrate of an integrated cooling packaging structure, and belongs to the technical field of power semiconductor packaging.
Background
The power semiconductor module has high power grade and high power consumption, and has higher requirement on the heat dissipation effect of the packaging structure. The traditional packaging structure adopts the structures of a chip, an interconnection layer, a lining plate, an interconnection layer, a base, an interconnection layer and a radiator, and a plurality of interconnection interfaces directly influence the overall heat radiation efficiency of the packaging structure. In order to improve the thermal management performance of the power module, a packaging structure without a base, which can also be called as an integrated cooling packaging structure, is provided with a chip, an interconnection layer, a lining board, an interconnection layer and a radiator sequentially from top to bottom. The integrated cooling pin type heat dissipation substrate is a heat dissipation product widely used in the application field of power modules represented by new energy automobiles at present.
In order to ensure that the pin-type heat dissipation substrate is not corroded in a water-cooling working environment, nickel is usually plated on the surface of the pin-type heat dissipation substrate, however, in the integrated cooling packaging structure, the pin-type heat dissipation substrate is directly connected with the lining plate, and the interface condition and the interconnection quality with the lining plate become key factors influencing the overall heat dissipation effect of the power module, so that tin plating with better solderability is paid attention to. The patent numbers 200610126106.1 and 201780079427.7 all propose that tin electroplating is very suitable for the electronic and semiconductor industries due to excellent soldering wettability. However, the tin plating layer cannot meet the corrosion-resistant requirement of the water-cooling environment, so the patent proposes to selectively plate different materials on the needle-type heat dissipation substrate metal bottom plate upper surface interconnection area, the needle fin array of the needle-type heat dissipation substrate and other than the upper surface interconnection area, and design jigs.
Disclosure of Invention
The invention aims to meet the performance requirements of an integrated cooling packaging structure on uniformity, corrosion resistance, weldability, low interface thermal resistance and the like of surface plating layers at different positions of a pin-type heat dissipation substrate, and provides a surface treatment process and a selective plating jig for selective plating of the pin-type heat dissipation substrate.
The surface treatment process of the needle type heat dissipation substrate is that after the whole surface of the needle type heat dissipation substrate is plated with graphene-nickel (primary plating), the needle type heat dissipation substrate is placed into a selective plating jig for sealing, only the interconnection area of the upper surface of the metal bottom plate of the remaining needle type heat dissipation substrate is contacted with external electroplating liquid, and then the interconnection area of the upper surface of the metal bottom plate of the needle type heat dissipation substrate is plated with tin (secondary plating).
Specifically, when graphene-nickel is plated on the surface of the pin-type heat dissipation substrate by one-time plating, an agitating mechanism is arranged in the nickel plating mechanism, the electroplating solution is a mixed solution of nickel plating solution and graphene dispersion solution, and the electroplating solution is agitated by electrode movement or airflow control.
The selective plating jig comprises an upper shell, a lower shell, an outer sealing ring and a plurality of inner sealing rings; the lower surface of the lower shell is provided with a plurality of through grooves; one side of the through groove facing inwards is provided with a step, an inner sealing ring is additionally arranged on the step, the upper surface of a metal bottom plate of the heat dissipation substrate to be plated with the pin is downward, and the inner side of the through groove is additionally provided with the inner sealing ring; the upper shell and the lower shell are tightly combined through an outer sealing ring, and the pin fin array of the pin-type heat dissipation substrate is accommodated in a cavity formed between the upper shell and the lower shell and is isolated from external electroplating liquid; only the interconnection area on the upper surface of the metal base plate of the pin-type heat dissipation substrate to be plated is contacted with the external electroplating liquid.
Specifically, the inner sealing ring is provided with double steps, the upper step is used for assembling a metal bottom plate of the pin type heat dissipation substrate to be plated, and the shape and the size of the upper step are correspondingly matched with those of the metal bottom plate; the opening shape and the size of the lower step are matched with those of the upper surface interconnection area of the metal bottom plate, when the upper surface interconnection area of the metal bottom plate is rectangular, the opening of the lower step of the inner sealing ring is a corresponding rectangle, and when the upper surface interconnection area of the metal bottom plate is a plurality of rectangles, the opening of the lower step of the inner sealing ring is a corresponding plurality of rectangles.
Specifically, the upper and lower housings are made of polypropylene material. The outer seal ring and the inner seal ring are made of hydrogenated nitrile rubber.
The invention has the following advantages:
1. according to the invention, the graphene-nickel is integrally plated on the surface of the needle-type heat dissipation substrate, so that the corrosion resistance of the surface plating layer is improved, and the heat conduction performance of the needle-type heat dissipation substrate is improved, and the heat dissipation efficiency of the power module is further improved.
2. According to the invention, tin plating is secondarily selected for the interconnection area of the upper surface of the metal bottom plate of the pin type heat dissipation substrate, so that the weldability of the interface is further improved, the interconnection quality between the pin type heat dissipation substrate and the power module chip packaging lining plate is enhanced, and the working reliability of the power module is further improved.
Drawings
FIG. 1 is a schematic cross-sectional view of an integrated cooling package structure to which the present invention is applied.
Fig. 2 is a schematic diagram of a conventional package heat dissipation structure and thermal resistance of a power module.
Fig. 3 is a schematic cross-sectional structure of an embodiment of a pin heat dissipating substrate.
Fig. 4 is a schematic cross-sectional structure of another embodiment of a pin heat dissipating substrate.
Fig. 5 is a schematic view of an interconnection area on the upper surface of a metal base plate of a pin heat dissipating substrate according to an embodiment of the present invention.
FIG. 6 is a schematic view of an interconnection area on the upper surface of a metal base of a pin heat sink substrate according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view of a selective plating jig according to an embodiment of the invention.
Fig. 8 is a front view of a lower housing of the selective plating jig according to the embodiment of the present invention.
Fig. 9 is a schematic diagram of a pin heat sink substrate added to a selective plating jig.
Detailed Description
The invention is further described below with reference to the drawings and examples.
The invention is suitable for an integrated cooling packaging structure in a power module, which is a new generation packaging heat dissipation structure, as shown in fig. 1, and the structure is as follows from top to bottom: chip 11, first interconnect layer 12, chip package liner 13, second interconnect layer 14, and pin heat spreader substrate 15. The chip package substrate 13 has a structure including a first copper layer 131, a ceramic layer 132 and a second copper layer 133 sequentially from top to bottom, and the ceramic layer 132 may be made of aluminum oxide, aluminum nitride or silicon nitride. The pin-type heat dissipation substrate 15 is directly connected with the second copper layer 133 of the chip package liner 13 in the integrated cooling package structure, so that the base 16 and the heat conduction silicone grease 17 in the traditional package heat dissipation structure are removed, and the heat conduction is more advantageous, as shown in fig. 2, from the junction temperature T of the chip j To ambient temperature T a In the heat transmission path of (2), R is reduced Base seat And R is TIM Two-part thermal resistance, sum of thermal resistances R th The process is as follows:
R th＝ R chip +R Interconnect 1 +R DBC +R Interconnect 2 +R Radiator
As shown in fig. 3 and 4, the pin heat dissipating substrate 15 includes a metal base 151 and a single-sided pin fin array 152, and may be made of copper or aluminum. The cross section of the single pin fin can be round, oval or drop-shaped, and a cylindrical pin fin is taken as an example in the schematic diagram. The height of the pin fin is about 4mm or 6mm, the pin fin can be selected according to different heat dissipation requirements, and the machining tolerance is-0.15 mm; the pin fin spacing in the array can be all consistent, the range is 3-4 mm, the tolerance is +/-0.1 mm, and the array can also be divided into a plurality of groups, as shown in figure 4, the pin fin spacing in each group is consistent, and the inter-group spacing is l, namely about 6-8 mm.
The metal bottom plate 151 of the pin heat dissipating substrate is generally rectangular, and the upper surface interconnection area 101 may be one rectangular area or a plurality of separate rectangular areas as required.
If the second copper layer 133 of the die attach pad 13 shown in fig. 1 is to be interconnected, since the second copper layer 133 of the die attach pad 13 is integral, the upper surface interconnection area 101 of the metal base 151 is also integral, as shown in fig. 5, and has the same shape and size as the second copper layer 133 of the die attach pad 13. If the first copper layer 131 of the chip package substrate 13 shown in fig. 1 is to be interconnected, since the first copper layer 131 is integrally patterned according to the topology of the circuit and divided into three rectangles, the upper surface interconnection area 101 of the metal chassis 151 is correspondingly divided into three rectangles as shown in fig. 6.
In an embodiment, the distance between the outer edge of the pin fin array 152 and the left and right edges of the metal base 151 is d 1 About 8.+ -. 0.1mm from the upper and lower edges of the metal base plate 151 is d 2 About 15.+ -. 0.1mm. Because the screw assembly holes are designed on the upper side and the lower side, the distance is slightly larger.
The surface treatment process of the needle type heat dissipation substrate provided by the invention is that after the whole surface of the needle type heat dissipation substrate is plated with graphene-nickel, the needle type heat dissipation substrate is placed into a selective plating jig designed by the invention for sealing, only the interconnection area of the upper surface of the metal bottom plate of the remaining needle type heat dissipation substrate is contacted with external electroplating liquid, and then the interconnection area of the upper surface of the metal bottom plate of the needle type heat dissipation substrate is plated with tin.
The overall flow of the embodiment is as follows:
step 1: the needle type heat dissipation substrate 15 is hung on a hanging mechanism according to batches, sequentially passes through an ultrasonic mechanism, a degreasing mechanism, an electrolysis mechanism, a polishing mechanism, an acid washing mechanism, a nickel plating mechanism and a mechanism for cleaning for many times, and finally passes through an air drying mechanism and is conveyed to a stripping and hanging mechanism.
The nickel plating mechanism is provided with an agitating mechanism, wherein the electroplating solution is a mixed solution of nickel plating solution and graphene dispersion liquid, and the graphene is uniformly dispersed in the electroplating solution by agitating the plating solution through electrode movement or controlling air flow.
Step 2: and (3) controlling a manipulator according to a set flow, placing the needle type heat dissipation substrate 15 subjected to graphene-nickel plating in the step (1) in a manufactured selective plating jig, conveying to a tin plating mechanism, and after tin plating, cleaning and air-drying the needle type heat dissipation substrate by the cleaning and air-drying mechanism.
The selective plating jig comprises an upper shell 21, a lower shell 22, an outer sealing ring 23 and an inner sealing ring set 24, as shown in fig. 7-9, wherein the upper shell 21 and the lower shell 22 are made of polypropylene materials, and the outer sealing ring 23 and the inner sealing ring set 24 are made of hydrogenated nitrile rubber. The lower surface of the lower shell 22 is provided with a plurality of through grooves 25, one side of the through grooves 25 facing inwards is provided with a step, an inner sealing ring 24 is additionally arranged on the step, the upper surface of a metal bottom plate of the heat dissipation substrate to be plated with the pin is facing downwards, and the inner side of the through grooves 25 is additionally arranged through the inner sealing ring 24. The upper case 21 and the lower case 22 are tightly combined by an outer seal ring 23, and the pin fin array of the pin heat dissipation substrate is accommodated in a cavity formed between the upper case 21 and the lower case 22.
Depending on the number of plating batches, a plurality of double-bore through-grooves 25 (8 through-grooves are taken as an example in fig. 8) may be formed in the lower housing 22, and an inner seal 24 is attached to each through-groove 25. In step 2, the manipulator makes the upper surface of the metal bottom plate 151 of the pin-type heat dissipating substrate 15 to be plated downward, attaches the upper surface of the metal bottom plate 151 to the step of the through groove 25 of the lower case 22 through the inner seal ring 24, then covers the upper case 21 and the outer seal ring 23, and isolates the pin fin array 152 of the pin-type heat dissipating substrate 15 and the part outside the interconnection area of the upper surface of the metal bottom plate 151 from the plating solution, as shown in fig. 9.
The through groove 25 of the lower housing 22 of the selective plating jig and the inner seal ring 24 are both double-aperture, as shown in fig. 7, the inner seal ring 24 has an upper step and a lower step, and the upper step 241 is used for assembling the metal bottom plate of the pin type heat dissipation substrate 15 to be plated, so that the shape and the size of the upper step 241 are correspondingly consistent with those of the metal bottom plate 151, and the pin type heat dissipation substrate 15 can be fixed on the through groove 25. The opening of the lower step 242 has a shape and size identical to those of the upper surface interconnection area 101 of the metal base plate 151, and when the upper surface interconnection area 101 of the metal base plate 151 is the whole as shown in fig. 5, the opening of the lower step 242 of the inner seal ring 24 has a rectangular shape and size identical to those of the upper surface interconnection area 101; when the upper surface interconnection area 101 of the metal chassis 151 has three rectangles as shown in fig. 6, the openings of the lower step 242 have corresponding three rectangles in order to expose the upper surface interconnection area 101 of the metal chassis to the external plating solution.
When the selective plating jig is used for tin plating, plating solution flows in from the bottom of the through groove 25 of the lower housing 22 of the jig, the upper surface interconnection area 101 of the metal bottom plate 151 of the exposed pin-type heat dissipation substrate 15 is plated, the pin fin array 152 and the part except the upper surface interconnection area 101 of the metal bottom plate 151 are isolated and protected between the upper housing 21 and the lower housing 22, and the plated graphene-nickel layer is not polluted by secondary plating solution.
Step 3: after the steps 1 and 2, the interconnection area 101 on the upper surface of the metal bottom plate of the obtained pin type heat dissipation substrate 15 is plated with a graphene-nickel coating and a tin coating; the surfaces of the pin fin array 152 and the metal base plate outside the upper surface interconnect area 101 are plated with a graphene-nickel plating. The above needle type heat dissipation substrate 15 subjected to selective plating is cleaned and inspected for appearance, and can be applied to the integrated cooling package structure of fig. 1.
The needle type heat dissipation substrate surface treatment process provided by the invention protects the needle fin array 152 and the part outside the upper surface interconnection area of the metal bottom plate 151 by the graphene-nickel coating, improves the heat conduction performance while improving the corrosion resistance of the surface coating, and the coating structure of the upper surface interconnection area 101 of the metal bottom plate 151 is the graphene-nickel coating and the tin coating from bottom to top, and the tin coating is manufactured on the upper surface of the graphene-nickel coating, so that the weldability of the interface is improved, and the interconnection quality between the subsequent needle type heat dissipation substrate 15 and the chip packaging lining plate 13 is enhanced.
The present invention is not limited to the preferred embodiments described herein, but is intended to cover modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (2)
1. The surface treatment process of the needle type heat dissipation substrate is characterized in that after the whole surface of the needle type heat dissipation substrate is plated with graphene-nickel, the needle type heat dissipation substrate is placed into a selective plating jig for sealing, only the interconnection area of the upper surface of the metal bottom plate of the remaining needle type heat dissipation substrate is contacted with external electroplating liquid, and then the interconnection area of the upper surface of the metal bottom plate of the needle type heat dissipation substrate is plated with tin;
the selective plating jig comprises an upper shell (21) and a lower shell (22), wherein a plurality of through grooves (25) are formed in the lower surface of the lower shell (22); one side of the through groove (25) facing inwards is provided with a step, an inner sealing ring (24) is additionally arranged on the step, the upper surface of a metal bottom plate of the needle-type heat dissipation substrate to be plated is downwards, the inner side of the through groove (25) is additionally arranged through the inner sealing ring (24), then the upper shell (21) is covered, the lower shells (22) of the upper shell (21) are tightly combined through an outer sealing ring (23), namely, a needle fin array of the needle-type heat dissipation substrate is accommodated in a cavity formed between the upper shell (21) and the lower shell (22), and is isolated from external electroplating liquid;
the inner sealing ring (24) is provided with double steps, the upper step is used for assembling a metal bottom plate of the pin type heat dissipation substrate to be plated, and the shape and the size of the upper step are correspondingly matched with those of the metal bottom plate; the opening shape and the size of the lower step are matched with those of the upper surface interconnection area of the metal bottom plate, when the upper surface interconnection area of the metal bottom plate is rectangular, the opening of the lower step of the inner sealing ring is a corresponding rectangle, and when the upper surface interconnection area of the metal bottom plate is a plurality of rectangles, the opening of the lower step of the inner sealing ring is a corresponding plurality of rectangles.
2. The surface treatment process of the needle type heat dissipation substrate according to claim 1, wherein when the graphene-nickel is plated on the surface of the needle type heat dissipation substrate, an agitation mechanism is arranged in the nickel plating mechanism, the electroplating solution is a mixed solution of a nickel plating solution and a graphene dispersion solution, and the electroplating solution is agitated by electrode movement or air flow control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310425127.7A CN116427002B (en) | 2023-04-20 | 2023-04-20 | Surface treatment process of pin type heat dissipation substrate and selective plating jig |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310425127.7A CN116427002B (en) | 2023-04-20 | 2023-04-20 | Surface treatment process of pin type heat dissipation substrate and selective plating jig |
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| CN116427002A CN116427002A (en) | 2023-07-14 |
| CN116427002B true CN116427002B (en) | 2023-10-24 |
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| CN111218701A (en) * | 2020-01-16 | 2020-06-02 | 西安微电子技术研究所 | SOP-packaged local plating-resistant protection method for circuit module to be plated |
| WO2021179352A1 (en) * | 2020-03-11 | 2021-09-16 | 黄山学院 | High-power ipm structure based on graphene-based packaging substrate, and processing technology |
| CN115831890A (en) * | 2022-12-22 | 2023-03-21 | 黄山谷捷股份有限公司 | IGBT power module heat radiation structure and processing technology thereof |
| CN218710931U (en) * | 2022-04-29 | 2023-03-24 | 山东睿思精密工业有限公司 | Local gilding apparatus for producing of product |
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| CN105239118A (en) * | 2014-06-17 | 2016-01-13 | 于长弘 | Electroplating jig |
| CN206376020U (en) * | 2016-12-30 | 2017-08-04 | 南通通富微电子有限公司 | A kind of electroplate jig |
| CN111218701A (en) * | 2020-01-16 | 2020-06-02 | 西安微电子技术研究所 | SOP-packaged local plating-resistant protection method for circuit module to be plated |
| WO2021179352A1 (en) * | 2020-03-11 | 2021-09-16 | 黄山学院 | High-power ipm structure based on graphene-based packaging substrate, and processing technology |
| CN218710931U (en) * | 2022-04-29 | 2023-03-24 | 山东睿思精密工业有限公司 | Local gilding apparatus for producing of product |
| CN115831890A (en) * | 2022-12-22 | 2023-03-21 | 黄山谷捷股份有限公司 | IGBT power module heat radiation structure and processing technology thereof |
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