CN214168173U

CN214168173U - Cathode conducting ring device of TSV electroplating equipment

Info

Publication number: CN214168173U
Application number: CN202023290162.3U
Authority: CN
Inventors: 邵树宝; 王福亮; 储冬华; 陈利锋; 赵芹; 周雨英; 陈宇
Original assignee: Jiangsu Xinmeng Semiconductor Equipment Co ltd
Current assignee: Jiangsu Xinmeng Semiconductor Equipment Co ltd
Priority date: 2020-12-30
Filing date: 2020-12-30
Publication date: 2021-09-10
Anticipated expiration: 2030-12-30

Abstract

The utility model discloses a TSV electroplating device negative pole conducting ring device, including base plate, electrode slice, closing plate, be equipped with first electrical connection terminal, electroplating hole on the base plate, the electrode slice is including closing annular main part and a plurality of second electrical connection terminals that set up at main part periphery interval, and the main part is counterpointed with the electroplating hole and is set up, and the interval evenly is equipped with the round shell fragment in the main part, and the shell fragment is served as a contrast and is equipped with the sealing washer that is used for sealed semiconductor work piece front edge, and the closing plate passes through bolted connection with the pressfitting sealed semiconductor work piece back with the base plate. The utility model discloses a shell fragment, sealing washer seal up the protection to the positive edge of semiconductor work piece, seal up the protection to the semiconductor work piece back through the closing plate, can directly prepare and obtain only in the positive intermediate position have the electroplating semiconductor work piece of metal level, simultaneously, through setting up the conductor wire in the metallic channel and filling the insulating layer, separate conductor wire and plating solution, can avoid the conductor wire to be corroded.

Description

Cathode conducting ring device of TSV electroplating equipment

Technical Field

The utility model relates to a semiconductor electroplating process technical field, concretely relates to TSV electroplating equipment negative pole conducting ring device.

Background

In the semiconductor processing process, a metal layer is plated on the surface of a semiconductor by using an electroplating process, wherein the semiconductor (such as a round silicon wafer) is electrically connected with a cathode, an electroplating sheet (such as a copper sheet) is electrically connected with an anode, then the semiconductor and the electroplating sheet are placed into a tank filled with electroplating solution, and the electroplating is finished by electrifying direct current for a while.

However, the conventional cathode conducting ring device matched with the semiconductor in the electroplating process is simple in structure, the semiconductor cannot be protected in a sealing manner in the electroplating process, the front surface (the surface facing the anode) of the semiconductor can be covered with the metal layer in the electroplating process, a small amount of metal can be attached to the back surface of the semiconductor, and an electroplated semiconductor workpiece with the back surface, the front surface edge and no metal layer and only the metal layer in the middle of the front surface cannot be directly prepared.

Meanwhile, the electroplating solution can corrode the conductive wire of the cathode conductive ring device in the electroplating process, and the conventional cathode conductive ring device cannot protect the conductive wire.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a TSV electroplating device negative pole conducting ring device.

In order to realize the purpose of the utility model, the utility model adopts the following technical scheme:

a cathode conducting ring device of TSV electroplating equipment comprises a substrate, an electrode plate and a sealing plate, wherein a first electric terminal and an electroplating hole are formed in the substrate, the electrode plate comprises a closed-loop main body portion and a plurality of second electric terminals arranged on the periphery of the main body portion at intervals, the main body portion and the electroplating hole are arranged in an aligned mode, a circle of elastic sheet is uniformly arranged on the inner periphery of the main body portion at intervals, a sealing ring used for sealing the edge of the front face of a semiconductor workpiece is arranged on the elastic sheet in a lining mode, and the sealing plate is connected with the substrate through bolts to seal the back face of the semiconductor workpiece in a pressing mode;

the substrate is provided with a wire groove, a conductive wire used for connecting a first electric connection terminal and a second electric connection terminal is arranged in the wire groove, an insulating layer is filled in the wire groove to separate the conductive wire from electroplating solution, and the elastic sheet is provided with a protruding part exposed out of the sealing ring to be in contact with a semiconductor workpiece for power supply.

As the utility model discloses further modified technical scheme is when not the pressurized the free end of shell fragment sets up to closing plate lopsidedness.

As a further improved technical scheme of the utility model, the sealing washer extends to on by the shell fragment the main part, in order to seal the main part with the fitting surface of closing plate.

As the utility model discloses further modified technical scheme, the close laminating has set firmly according to the clamp plate on the base plate, according to the clamp plate by first electrical connection terminal department along the metallic channel extends the setting to electrode slice one side.

As a further improved technical scheme of the utility model, base plate upper portion is equipped with the handle hole.

As the utility model discloses further modified technical scheme, base plate, closing plate are made by ceramic material, the electrode slice is made by metal material, the sealing washer is made by rubber materials.

Compared with the prior art, the utility model discloses a technological effect lies in:

the utility model discloses a shell fragment, sealing washer seal up the protection to the positive edge of semiconductor work piece, seal up the protection to the semiconductor work piece back through the closing plate, can directly prepare and obtain only in the positive intermediate position have the electroplating semiconductor work piece of metal level, simultaneously, through setting up the conductor wire in the metallic channel and filling the insulating layer, separate conductor wire and plating solution, can avoid the conductor wire to be corroded.

Drawings

Fig. 1 is a schematic front view of a cathode conductive ring device of a TSV electroplating apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic sectional view taken along line A-A in FIG. 1;

FIG. 3 is an enlarged partial schematic view of FIG. 2 at A;

fig. 4 is a schematic front view of the cathode conducting ring device of the TSV electroplating apparatus with the sealing plate hidden according to the embodiment of the present invention;

FIG. 5 is a schematic front view of the electrode sheet;

FIG. 6 is a schematic structural view of the spring plate and the seal ring in an uncompressed state;

FIG. 7 is a schematic structural view showing a press-fit sealing state of the spring plate, the seal ring, the semiconductor workpiece, and the seal plate;

fig. 8 is a schematic front view of a semiconductor workpiece manufactured by using a cathode conducting ring device of a TSV electroplating apparatus according to an embodiment of the present invention.

Detailed Description

The present invention will be described in detail below with reference to specific embodiments shown in the drawings. However, these embodiments are not intended to limit the present invention, and structural, methodical, or functional changes that may be made by one of ordinary skill in the art based on these embodiments are all included in the scope of the present invention.

Referring to fig. 1 to 8, a cathode conducting ring device of TSV electroplating equipment includes a substrate 1, an electrode plate 2, and a sealing plate 3, where the substrate 1 is provided with a first electrical terminal 4 and an electroplating hole 5, the electrode plate 2 includes a closed-loop main body portion 21 and a plurality of second electrical terminals 22 arranged at intervals on the outer periphery of the main body portion 21, the main body portion 21 and the electroplating hole 5 are arranged in an aligned manner, a circle of elastic pieces 23 are uniformly arranged at intervals on the inner periphery of the main body portion 21, a sealing ring 10 for sealing the front edge of a semiconductor workpiece 7 is lined on the elastic pieces 23, and the sealing plate 3 and the substrate 1 are connected by bolts to seal the back of the semiconductor workpiece 7 in a press-fit manner;

the substrate 1 is provided with a wire groove 6, a conductive wire for connecting the first electric terminal 4 and the second electric terminal 22 is arranged in the wire groove 6, the wire groove 6 is filled with an insulating layer to separate the conductive wire from electroplating solution, and the elastic sheet 23 is provided with a projection 231 exposed out of the sealing ring 10 to be in contact with the semiconductor workpiece 7 for power supply.

The entire seal ring 10 is a ring shape matching the shape of the main body 21, and at least one continuous ring 101 is necessarily provided on the seal ring 10 for sealing the front edge of the semiconductor workpiece 7. Preferably, in the present embodiment, three rings of the protruding rings 101 are disposed on the sealing ring 10, one ring of the protruding rings 101 is disposed at the suspended edge of the sealing ring 10, and the remaining two rings of the protruding rings 101 are disposed inside the protruding portion 231. Since the elastic pieces 23 are provided at intervals, the protrusions 231 are also provided at intervals exposed from the seal ring 10.

The electrode sheet 2 is inserted into the substrate 1 and fixed to the substrate 1, and the sealing plate 3 is connected to the substrate 1 by bolts and can be removed from the substrate 1. The utility model discloses during the use, take off closing plate 3, then put semiconductor workpiece 7 (circular silicon chip) on electrode slice 2, then adorn closing plate 3 back again with the bolt fastening can.

In the electroplating process, the elastic sheet 23 supports the sealing ring 10 to carry out sealing protection on the edge of the front side of the semiconductor workpiece 7, the sealing plate 3 carries out sealing protection on the back side of the semiconductor workpiece 7, and the separated metal on the electroplating sheet is attached to the middle of the front side of the semiconductor workpiece 7 through the electroplating hole 5.

The electric connection relationship in the electroplating process is as follows, an external power line is connected with the first electric terminal 4, the first electric terminal 4 supplies power to the second electric terminal 22 through a conductive wire to enable the electrode plate 2 to be electrified, and the protruding part 231 of the electrode plate 2 is in contact with the semiconductor workpiece 7 for power supply.

In the electroplating process, the utility model is put into an electroplating bath, and the electroplating solution can be just submerged in the semiconductor workpiece 7 without submerging the whole substrate 1.

Furthermore, when the sealing plate is not pressed, the suspended end of the elastic sheet 23 is inclined towards the sealing plate 3 side. The inclined spring pieces 23 can provide better supporting force for the sealing ring 10 during sealing. In other embodiments, the elastic piece 23 may be disposed parallel to the main body 21, and sealing may be performed only by elastic deformation of the gasket 10.

Further, the sealing ring 10 extends from the elastic sheet 23 to the main body 21 to seal the mating surface of the main body 21 and the sealing plate 3. This is the preferred solution for sealing the back surface of the semiconductor workpiece 7, and in general, the metal accumulation on the back surface of the semiconductor workpiece 7 can be prevented already by the sealing plate 3 sealing in cooperation with the main body portion 21.

Furthermore, a pressing plate 8 is tightly and fixedly arranged on the substrate 1, and the pressing plate 8 extends from the first electric terminal 4 to one side of the electrode plate 2 along the wire groove 6. The pressing plate 8 is arranged to press the wire groove 6, so that the protection structure of the conductive wire is more stable, and the conductive wire is prevented from being tilted from the insulating layer. The pressing plate 8 is preferably made of a ceramic material.

Further, a handle hole 9 is formed in the upper portion of the base plate 1.

Further, the base plate 1 and the sealing plate 3 are made of ceramic materials, the electrode plate 2 is made of metal materials, and the sealing ring 10 is made of rubber materials.

the utility model discloses a shell fragment 23, sealing washer 10 seal up the protection to the positive edge of semiconductor workpiece 7, seal up the protection to the semiconductor workpiece 7 back through closing plate 3, can directly prepare and obtain only have the electroplating semiconductor workpiece 7 of metal level in positive intermediate position, simultaneously, through setting up the conductor wire in metallic channel 6 and filling the insulating layer, separate conductor wire and plating solution, can avoid the conductor wire to be corroded.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may be modified or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. A cathode conducting ring device of TSV electroplating equipment is characterized by comprising a base plate, an electrode plate and a sealing plate, wherein a first electric terminal and an electroplating hole are formed in the base plate, the electrode plate comprises a closed-loop main body portion and a plurality of second electric terminals arranged on the periphery of the main body portion at intervals, the main body portion and the electroplating hole are arranged in an aligned mode, a circle of elastic sheet is uniformly arranged on the inner periphery of the main body portion at intervals, a sealing ring used for sealing the edge of the front side of a semiconductor workpiece is arranged on the elastic sheet in a lining mode, and the sealing plate is connected with the base plate through bolts to seal the back side;

2. The cathode conductive ring apparatus for TSV electroplating apparatus of claim 1, wherein the free end of the spring plate is inclined toward the sealing plate side when not under pressure.

3. The cathode conductive ring apparatus for TSV electroplating apparatus of claim 1, wherein the sealing ring extends from the spring plate to the main body portion to seal the mating surface of the main body portion and the sealing plate.

4. The cathode conductive ring apparatus for TSV electroplating apparatuses as claimed in claim 1, wherein a pressing plate is tightly attached to the substrate, and the pressing plate extends from the first electrical terminal along the wire groove to one side of the electrode pad.

5. The cathode conductive ring assembly for TSV plating equipment of claim 1, wherein a handle hole is formed at an upper portion of the substrate.

6. The cathode conductive ring apparatus for TSV electroplating apparatuses as claimed in claim 1, wherein the substrate and the sealing plate are made of a ceramic material, the electrode sheet is made of a metal material, and the sealing ring is made of a rubber material.