CN113564676A - Conductive sealing assembly and electroplating clamp comprising same - Google Patents
Conductive sealing assembly and electroplating clamp comprising same Download PDFInfo
- Publication number
- CN113564676A CN113564676A CN202110873881.8A CN202110873881A CN113564676A CN 113564676 A CN113564676 A CN 113564676A CN 202110873881 A CN202110873881 A CN 202110873881A CN 113564676 A CN113564676 A CN 113564676A
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- Prior art keywords
- conductive
- wafer
- sealing
- seal
- seal assembly
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
The invention discloses a conductive sealing component and an electroplating clamp comprising the same, which are used for the electroplating clamp, wherein the conductive sealing component comprises: the conducting ring is provided with a conducting end which is used for electrically contacting with the edge of the wafer; the sealing part is at least arranged on the inner side of the conductive end and provided with a sealing end, the sealing end extends towards the wafer along a direction which is not perpendicular to the surface of the wafer, the size thickness of the sealing end is gradually narrowed along a direction close to the wafer, and one side, facing the wafer, of the sealing end protrudes out of the conductive end. The conductive sealing assembly ensures the uniformity and reliability of electrical contact with the wafer, can complete the double states of sealing and conduction at the same time, solves the problem of influence of the uniformity and the tightness of the conduction on the uniformity of electroplating, and increases the benefit of the wafer.
Description
Technical Field
The invention relates to the field of wafer electroplating, in particular to a conductive sealing assembly and an electroplating clamp comprising the same.
Background
A semiconductor plating machine is a device used in a chip manufacturing process for plating metal ions in a plating solution onto a wafer surface. The electroplating machine comprises a frame, an electroplating bath, a circulating system, a cleaning tank, an electroplating hanger and the like. The electroplating fixture in the electroplating hanger is the most important auxiliary tool for electroplating processing, and has direct influence on the distribution and the working efficiency of an electroplating coating. In single-side electroplating, the sealing performance and the conductive uniformity of the electroplating hanger are the key of single-side electroplating and the key of sealing and pressing edges, and in wafer electroplating, the smaller the sealing and conductive pressing edges are, the lower the cost is, and the maximum utilization rate of the wafer is greatly met. Once the concentricity of the wafer and the sealing element is insufficient or the angle is changed, the sealing performance is greatly reduced, the obtained electroplated layer is not uniform, better conduction uniformity cannot be obtained, and the performance of the wafer is affected.
Disclosure of Invention
The invention aims to overcome the defects that an electroplated layer obtained in the prior art is uneven, cannot obtain better conductive uniformity and has weak sealing performance, and provides a conductive sealing assembly and a plating clamp comprising the same.
The invention solves the technical problems through the following technical scheme:
a conductive seal assembly for an electroplating fixture, the conductive seal assembly comprising:
the conducting ring is provided with a conducting end which is used for electrically contacting with the edge of the wafer;
the sealing part is at least arranged on the inner side of the conductive end and provided with a sealing end, the sealing end extends towards the wafer along a direction which is not perpendicular to the surface of the wafer, the size thickness of the sealing end is gradually narrowed along a direction close to the wafer, and one side, facing the wafer, of the sealing end protrudes out of the conductive end.
This electrically conductive seal assembly is when contacting with the wafer, the sealed end of the sealing portion who contacts the wafer surface earlier is because relative wafer surface slope, and its size thickness narrows gradually along the direction of being close to the wafer, be convenient for sealed end compression deformation under the atress condition, make the conducting ring can be reliable with wafer surface contact, thereby when guaranteeing sealed effect, guarantee homogeneity and the reliability with the wafer electrical contact, accomplish sealed and electrically conductive two-state, the influence of electrically conductive homogeneity and leakproofness to electroplating homogeneity has been solved, the benefit of wafer has been increased.
Preferably, the sealing portion has at least two sealing ends distributed along a radial direction of the wafer, and the sealing ends distributed at the large diameter extend obliquely toward an outer side of the wafer.
In the technical scheme, the two sealing ends are arranged to be in contact with and compressed with the wafer, so that the sealing reliability of the sealing part is improved. The sealing ends distributed at the large diameter part extend towards the outer side of the wafer in an inclined mode, so that the sealing ends can deform towards the large diameter direction after being stressed, and the difficulty of enabling the sealing ends to deform under pressure is reduced.
Preferably, the sealing ends distributed at the small diameter extend obliquely toward the inner side of the wafer.
In the technical scheme, the sealing end distributed at the small diameter part extends towards the inner side direction of the wafer in an inclined mode, so that the sealing end is convenient to deform towards the small diameter direction after being stressed, and the difficulty of enabling the sealing end to deform under pressure is reduced. Meanwhile, the sealing end at the large diameter part and the sealing end at the small diameter part are pressed and deformed towards different directions, and the sealing ends cannot interfere with each other.
Preferably, the sealing ends distributed at the large diameter protrude from the sealing ends distributed at the small diameter toward one side of the wafer.
In the technical scheme, the height difference exists between the two sealing ends, particularly, the sealing end on the inner side is lower than the sealing end on the outer side, so that the sealing end on the outer side can be firstly contacted with the surface of the wafer and is deformed under pressure, air between the two sealing ends is discharged from the gap between the sealing end on the inner side and the surface of the wafer, the difficulty of pressure sealing is reduced, and the sealing reliability is improved.
Preferably, the sealing end distributed at the major diameter has a greater dimensional thickness than the sealing end distributed at the minor diameter.
In this technical scheme, further reduce the pressurized deformation degree of difficulty that is located the sealed end of minor diameter department, avoid the design of two sealed ends to cause the influence to the pressurized sealing degree of difficulty of this sealing.
Preferably, the shape of the portion of the conductive terminal for contacting the wafer is at least one of a cone, a cylinder or a prism.
In the technical scheme, the shape of the tail end of the conductive end is set to be one of a cone, a cylinder or a prism, so that the electric connection reliability of the conductive end relative to the wafer is improved.
Preferably, a side surface of the sealing portion facing the conductive ring has a positioning structure, and the conductive ring is positioned in the positioning structure along a direction perpendicular to a surface of the wafer.
In the technical scheme, the conducting ring and the sealing part can be mutually positioned along the direction vertical to the surface of the wafer by arranging the positioning structure, and the fall of the sealing end relative to the conducting end is effectively prevented from being changed in the long-term use process.
Preferably, one side surface of the sealing portion facing the conductive ring is recessed inward to form the positioning structure, and a protrusion matching with the positioning structure is disposed on the surface of the conductive ring and clamped in the positioning structure.
In the technical scheme, a specific, simple and reliable structure arrangement scheme is provided, so that the conducting ring is positioned on the sealing part.
Preferably, the sealing portion and the conductive ring are both circular rings, and the positioning structure is circumferentially disposed on the entire outer side surface of the sealing portion.
In this technical scheme, through above-mentioned structural setting, improve the effect of conducting ring location on sealed portion.
Preferably, the height range of the protruding part of the sealing end from the conductive end towards one side of the wafer is between 0.2mm and 2 mm.
Preferably, the hardness of the material of the sealing end is not less than 60 °.
In the technical scheme, the sealing reliability of the sealing end relative to the wafer is ensured by enabling the hardness of the material of the sealing end to be not less than 60 degrees. Meanwhile, through the structural arrangement of the sealing end, the sealing end can be effectively compressed under the condition of relatively high hardness of the material, and the conductive piece is ensured to be reliably contacted with the surface of the wafer.
Preferably, the hardness of the material of the sealing end is not more than 90 degrees.
In this technical scheme, through the material hardness that makes the sealed end be not more than 90, avoid leading to the condition emergence of compression deformation difficulty because of the material of sealed end is too hard.
An electroplating clamp comprises the conductive sealing assembly, wherein the conductive sealing assembly is fixed on a clamp frame of the electroplating clamp and is used for being in direct contact with a wafer.
The positive progress effects of the invention are as follows:
this electrically conductive seal assembly and contain its electroplating fixture, when contacting with the wafer, the sealed end of the sealing of contacting the wafer surface earlier is because relative wafer surface slope, and its size thickness narrows along the direction of being close to the wafer gradually, be convenient for sealed end compression deformation under the atress condition, make the conducting ring can be reliable with wafer surface contact, thereby when guaranteeing sealed effect, guarantee homogeneity and the reliability with the wafer electrical contact, accomplish sealed and electrically conductive two-state, the influence of electrically conductive homogeneity and leakproofness to electroplating the homogeneity has been solved, the benefit of wafer has been increased.
Drawings
Fig. 1 is a bottom structural view of a conductive seal assembly of embodiment 1 of the present invention.
Fig. 2 is a side cross-sectional view of a conductive seal assembly of embodiment 1 of the present invention.
Fig. 3 is a partially enlarged view of a portion a in fig. 2.
Fig. 4 is a side cross-sectional view of a conductive seal assembly of embodiment 2 of the present invention.
Fig. 5 is a partially enlarged view of a portion B in fig. 4.
Description of reference numerals:
Conducting ring 1, conducting terminal 11
Sealing part 2, sealing end 21, positioning structure 22
Wafer 200
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
Example 1
The present invention provides a plating jig for contacting a wafer 200 for the purpose of both electrical connection and physical sealing. The electroplating clamp comprises a conductive sealing assembly 100 directly contacted with a wafer 200, as shown in fig. 1-3, the conductive sealing assembly 100 comprises a conductive ring 1 and a sealing part 2 which are relatively concentrically arranged, and the structural shapes of the sealing part 2 and the conductive ring 1 are both circular rings. The conductive ring 1 has a conductive end 11, the conductive end 11 is used for making electrical contact with an edge of the wafer 200, the sealing portion 2 is at least disposed inside the conductive end 11, the sealing portion 2 has a sealing end 21, the sealing end 21 extends toward the wafer 200 along a direction not perpendicular to a surface of the wafer, a dimension thickness D of the sealing end 21 is gradually narrowed along a direction approaching the wafer 200, and one side of the sealing end 21 facing the wafer 200 protrudes from the conductive end 11, so that the sealing end 21 contacts the wafer 200 first when the conductive sealing assembly 100 moves toward the direction approaching the surface of the wafer. Preferably, the height of the sealing end 21 protruding from the conductive end 11 ranges from 0.2mm to 2 mm.
When the conductive sealing component 100 is in contact with the wafer 200, the sealing end 21 of the sealing part 2 which is firstly in contact with the surface of the wafer inclines relative to the surface of the wafer, and the size thickness D of the sealing end gradually narrows along the direction close to the wafer 200, so that the sealing end 21 is compressed and deformed towards the direction which is not perpendicular to the surface of the wafer under the stress condition (see the direction indicated by the arrow in fig. 3), the conductive ring 1 can be reliably in contact with the surface of the wafer, the uniformity and the reliability of the electrical contact with the wafer 200 are ensured while the sealing effect is ensured, the double states of sealing and conduction are completed, the influence of the uniformity and the tightness of the conduction on the electroplating uniformity is solved, and the benefit of the wafer 200 is increased.
In addition, the shape of the portion of the conductive terminal 11 for contacting the wafer 200 is a cone. By this structural arrangement, the reliability of the electrical connection of the conductive terminals 11 with respect to the wafer 200 is improved. In other embodiments, the conductive end 11 may be in the shape of one of a cylinder and a prism, so as to achieve the purpose of improving the connection reliability.
In this embodiment, the hardness of the material of the seal end 21 should be in the range of 60 ° to 90 °. Specifically, the material hardness of the hermetic terminal 21 is not less than 60 °, so that the sealing reliability of the hermetic terminal 21 with respect to the wafer 200 is ensured. Meanwhile, by the structural arrangement of the sealing end 21, the sealing end 21 can be effectively compressed under the condition of relatively high material hardness, so that the conductive piece is ensured to be reliably contacted with the surface of the wafer. And the hardness of the material of the sealing end 21 is not more than 90 degrees, so that the situation that the material of the sealing end 21 is too hard to cause difficult compression deformation is avoided.
Example 2
The embodiment further provides a plating jig, and the specific structure of the conductive sealing assembly 100 disposed on the plating jig is substantially the same as that of the conductive sealing assembly 100 in embodiment 1, except that, as shown in fig. 4-5, in the embodiment, two sealing ends 21 are distributed on the sealing portion 2 along the radial direction C of the wafer 200, and the two sealing ends 21 are specifically the sealing end 21a distributed at the large diameter of the wafer 200 and the sealing end 21b distributed at the small diameter of the wafer 200. Wherein the sealing end 21a at the large diameter is extended obliquely toward the outer side of the wafer 200. In this technical scheme, the sealing reliability of the sealing portion 2 is improved by providing two sealing ends 21 to contact and compress the wafer 200. The sealing ends 21a distributed at the large diameter extend obliquely towards the outer side direction of the wafer 200, so that the sealing ends 21a deform towards the large diameter direction after being stressed, and the difficulty of deforming the sealing ends 21a under pressure is reduced. In addition, the sealing ends 21b distributed at the small diameter of the wafer 200 extend obliquely toward the inner side of the wafer 200. Specifically, by extending the sealing end 21b obliquely toward the inner side of the wafer 200, the sealing end 21b is deformed toward the small diameter direction after being stressed, and the difficulty of deforming the sealing end 21b under pressure is reduced. Meanwhile, the seal end 21a at the large diameter and the seal end 21b at the small diameter are deformed in different directions without interfering with each other.
In addition, as shown in fig. 5, the seal ends 21a distributed at the large diameter protrude from the seal ends 21b distributed at the small diameter toward the side of the wafer 200. By making the height difference H between the two seal ends 21, specifically, making the inner seal end 21b lower than the outer seal end 21a, the outer seal end 21a can contact with the wafer surface first and be deformed under pressure, so that the air between the two seal ends 21 is exhausted from the gap between the inner seal end 21b and the wafer surface (not shown in fig. 5) along the direction indicated by the arrow in fig. 5, thereby reducing the difficulty of pressure sealing and improving the sealing reliability.
As shown in fig. 5, the size thickness of the sealing end 21a distributed at the large diameter is greater than the size thickness of the sealing end 21b distributed at the small diameter, so that the difficulty of the compressive deformation of the sealing end 21b at the small diameter is further reduced, and the influence of the design of the double sealing ends on the difficulty of the compressive sealing of the sealing part 2 is avoided.
In addition, one side surface of the sealing part 2 facing the conductive ring 1 is provided with a positioning structure 22, and the conductive ring 1 is positioned on the positioning structure 22 along a direction perpendicular to the surface of the wafer. In this embodiment, a side surface of the sealing portion 2 facing the conductive ring 1 is recessed inward to form a positioning structure 22, and a surface of the conductive ring 1 has a bump matching with the shape of the positioning structure 22, and the bump is clamped in the positioning structure 22. By arranging the positioning structure 22, the conductive ring 1 and the sealing part 2 can be positioned with each other along the direction perpendicular to the surface of the wafer, and the fall of the sealing end 21 relative to the conductive end 11 is effectively prevented from being changed in the long-term use process.
In other embodiments, the number of the sealing ends 21 of the sealing portion 2 may also exceed two to provide more effective wafer sealing effect.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (13)
1. A conductive seal assembly for use with an electroplating fixture, the conductive seal assembly comprising:
the conducting ring is provided with a conducting end which is used for electrically contacting with the edge of the wafer;
the sealing part is at least arranged on the inner side of the conductive end and provided with a sealing end, the sealing end extends towards the wafer along a direction which is not perpendicular to the surface of the wafer, the size thickness of the sealing end is gradually narrowed along a direction close to the wafer, and one side, facing the wafer, of the sealing end protrudes out of the conductive end.
2. The conductive seal assembly as set forth in claim 1, wherein said seal portion has at least two said seal ends distributed along a radius direction of the wafer, said seal ends distributed at a large diameter being inclined to extend toward an outer side of the wafer.
3. The conductive seal assembly of claim 2, wherein said sealing ends distributed at the smaller diameter extend obliquely toward the inner side of the wafer.
4. The conductive seal assembly of claim 2, wherein said seal ends distributed at a larger diameter are raised above said seal ends distributed at a smaller diameter toward a side of said wafer.
5. The conductive seal assembly according to claim 4, wherein the dimensional thickness of the sealing end distributed at the major diameter is greater than the dimensional thickness of the sealing end distributed at the minor diameter.
6. The conductive seal assembly of claim 1, wherein the portion of the conductive tip for contacting the wafer is at least one of conical, cylindrical, or prismatic in shape.
7. The conductive seal assembly of claim 1, wherein a side surface of the seal portion facing the conductive ring has a locating feature, the conductive ring being positioned in the locating feature in a direction perpendicular to a surface of the wafer.
8. The conductive seal assembly according to claim 7, wherein a side surface of the sealing portion facing the conductive ring is recessed to form the positioning structure, and a surface of the conductive ring has a projection matching a shape of the positioning structure, and the projection is engaged in the positioning structure.
9. The conductive seal assembly as set forth in claim 7 wherein said seal portion and said conductive ring are each configured in the shape of a circular ring, said locating structure being circumferentially disposed on the entire outside surface of said seal portion.
10. The conductive seal of claim 1, wherein a height of said seal end protruding from said conductive end toward a side of said wafer ranges between 0.2mm and 2 mm.
11. The conductive seal of claim 1, wherein said seal end is formed of a material having a hardness of not less than 60 °.
12. The conductive seal of claim 11, wherein said seal end is formed of a material having a hardness of no greater than 90 °.
13. A plating jig comprising the conductive seal assembly according to any one of claims 1 to 12, the conductive seal assembly being secured to a jig frame of the plating jig, the conductive seal assembly being adapted to be in direct contact with a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110873881.8A CN113564676A (en) | 2021-07-30 | 2021-07-30 | Conductive sealing assembly and electroplating clamp comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110873881.8A CN113564676A (en) | 2021-07-30 | 2021-07-30 | Conductive sealing assembly and electroplating clamp comprising same |
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| Publication Number | Publication Date |
|---|---|
| CN113564676A true CN113564676A (en) | 2021-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110873881.8A Pending CN113564676A (en) | 2021-07-30 | 2021-07-30 | Conductive sealing assembly and electroplating clamp comprising same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114197021A (en) * | 2021-11-04 | 2022-03-18 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-wafer film coating clamp |
-
2021
- 2021-07-30 CN CN202110873881.8A patent/CN113564676A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114197021A (en) * | 2021-11-04 | 2022-03-18 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-wafer film coating clamp |
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