CN1140898A - Method of forming sog film in semiconductor device - Google Patents
Method of forming sog film in semiconductor device Download PDFInfo
- Publication number
- CN1140898A CN1140898A CN96110029A CN96110029A CN1140898A CN 1140898 A CN1140898 A CN 1140898A CN 96110029 A CN96110029 A CN 96110029A CN 96110029 A CN96110029 A CN 96110029A CN 1140898 A CN1140898 A CN 1140898A
- Authority
- CN
- China
- Prior art keywords
- sog film
- film
- annealing
- plasma
- sog
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000000137 annealing Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008284 Si—F Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 208000036829 Device dislocation Diseases 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a method to reduce the moisture absorbing force of a SOG film by post-process of NF3 gas plasma ions after the formation of SOG film.
Description
The present invention relates to form the method for spin-coating glass (hereinafter referred to as " the SOG ") film of semiconductor device, be particularly related to the method for the sog film that forms following semiconductor device, after this film forms, carry out the plasma subsequent treatment, reduce the moisture absorption of sog film, therefore improve the reliability of device.
Usually, sog film is owing to having the advantage that high viscosity has even grazing and high fracture-resistant.Utilize spin coating method to add the SOG material, because it is solidified, so the SOG material is as insulating barrier by carrying out annealing in process after the spin coating.Therefore, in making semiconductor device technology, utilize sog film to reach the purpose of insulation and make between the metal line and the complanation of device total.But because the easy moisture absorption of sog film makes metal and each film drying shrinkage, thereby sog film can make metal line and each diaphragm of being formed on the sog film break.Because oxidation underlying metal wiring in contact hole is so also can increase the interior resistance of metal line.This makes between the metal line line degenerate or disconnects, and reduces the reliability of device.When device moved, sog film was emitted the moisture of absorption.The moisture of emitting will become between gate oxide transistor and the silicon substrate or field oxide film and silicon substrate between unsettled building.Because the hot carrier effect, capture moisture and be the main cause that transistor degenerates or can not transoid.As a result, the electrical characteristics of device are degenerated.
The purpose of this invention is to provide a kind of method, it carries out the plasma subsequent technique after forming sog film, reduced the sog film wettability power.
The present invention that can achieve the above object is characterized in that, comprises the following steps, the 1st interlayer that is formed with metallic pattern thereon applies the SOG material after cutting off and forming the 2nd interlayer dielectric on the level film on the in the end resulting structure; Form sog film by the 1st annealing in process; Utilize plasma subsequent treatment sog film; The 2nd annealing sog film.
In order to understand characteristics of the present invention and purpose relatively fully, will be described in detail in conjunction with following accompanying drawing:
Figure 1A is the cutaway view of the device of a kind of sog film method of making semiconductor device of explanation to Fig. 1 D.
For above-mentioned several views, identical mark is represented identical part.
With reference to the accompanying drawings, be described in detail the present invention.
Figure 1A is sog film method in a kind of semiconductor device is made in explanation according to the present invention a device cutaway view to Fig. 1 D.
Figure 1A is the cutaway view of device, wherein, forms metal film 2 by the electric conducting material of deposit on the 1st interlayer dielectric 1 as aluminium, and interlayer dielectric 1 is to utilize the technology of desirable manufacturing semiconductor device to form.Deposit TiN on film 2 forms antireflection and films and 3 then utilize required mask, by lithography corrosion process make antireflection film 3 and metal film 2 form figures.
Figure 1B is the cutaway view of device, wherein, after forming the 2nd interlayer dielectric 4, for making the surface straight, applies the SOG material and forms sog film 5, carries out the 1st annealing then, and temperature is 200 to 400 ℃.
Fig. 1 C is the cutaway view of device, wherein, utilizes NF
3Gas carries out plasma bombardment, and subsequent treatment sog film 5 wherein, produces plasma in chemical vapor deposition (CVD) equipment or plasma apparatus.Input NF
3Gas about 0.5 to 5SLM.Add high frequency power (13.56MH) and low frequency (300 to 50KHz) power simultaneously to improve the ion bombardment effect.The effect that obtains by above-mentioned plasma treatment is as follows.
Utilize plasma apparatus to separate and ionization NF
3Gas produces and resembles N
+, F
+, NF
x +Such atomic group, bombardment sog film 5.Because resemble N
+, F
+, NF
x +Such ion, the dangling bonds position wettability power in the sog film 5 that plasma treatment is crossed reduces, so reduced the wettability power of sog film.Owing to produce the Si-N key from the teeth outwards, this surface conversion that makes sog film 5 is the form of nitrogen oxide.Because fluorine (F) has high negative electricity in sog film 5, use as F
+, NF
x +Such ion replaces the Si-F key, the Si-OH key is separated and discharges the OH ion.In addition, above-mentioned alternative Si-F key has strengthened the power of Si-O key, therefore, prevents that it is subjected to water (H in the atmosphere
2O) destruction has been reduced the wet ability of sog film effectively.
Fig. 1 D is the cutaway view of device, wherein, and after plasma treatment, at 400 to 450 ℃ of the 2nd annealing sog films of temperature.Carry out the 2nd annealing, discharge the fluorine with weak bond (F) lewis' acid that is retained in the sog film 5.And, also can discharge the OH that the running of reduction device is disconnected its key because of same process, H through other compound of the 2nd annealing
2O, CH
x, F
xIon.
As mentioned above, the present invention has reduced the moisture absorption of film, so can obviously improve device reliability by carry out subsequent treatment after forming SOG.
As mentioned above, though narrated preferred embodiment with certain special case, that has only illustrated principle of the present invention, should be understood that, the invention is not restricted to the preferred embodiment that this paper is open and illustrate.Therefore, the various suitable variation of carrying out in scope and spirit essence of the present invention all comprises in other embodiments of the invention.
Claims (6)
1. method that forms the spin-coating glass film of semiconductor device, it comprises the following steps:
After forming the 2nd interlayer dielectric on the 1st interlayer dielectric, on final resulting structure, apply the SOG material, it is characterized in that, on the 2nd interlayer dielectric, form metallic pattern;
Form sog film by the 1st annealing in process;
Utilize the described sog film of plasma subsequent treatment;
The described sog film of annealing for the second time.
2. according to the method for claim 1, it is characterized in that, under 200 to 400 ℃ of temperature, carry out described the 1st annealing.
3. according to the method for claim 1, it is characterized in that, in plasma apparatus, utilize NF
3Gas produces described plasma.
4. according to the method for claim 1, it is characterized in that, apply at the same time in the plasma apparatus of high and low frequency power, produce described plasma.
5. according to the method for claim 3, it is characterized in that, with 0.5 to 5SLM input NF
3Gas.
6. according to the method for claim 1, it is characterized in that, under 400 ℃ to 450 ℃ temperature, carry out described the 2nd annealing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR12711/95 | 1995-05-22 | ||
| KR1019950012711A KR0172539B1 (en) | 1995-05-22 | 1995-05-22 | Method of forming s.o.g. in a semiconductor device |
| KR12711/1995 | 1995-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1140898A true CN1140898A (en) | 1997-01-22 |
| CN1076869C CN1076869C (en) | 2001-12-26 |
Family
ID=19415020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96110029A Expired - Fee Related CN1076869C (en) | 1995-05-22 | 1996-05-22 | Method of forming SOG film in semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08330301A (en) |
| KR (1) | KR0172539B1 (en) |
| CN (1) | CN1076869C (en) |
| DE (1) | DE19620677B4 (en) |
| GB (1) | GB2301224B (en) |
| TW (1) | TW299467B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970052338A (en) * | 1995-12-23 | 1997-07-29 | 김주용 | Manufacturing method of semiconductor device |
| GB2322734A (en) * | 1997-02-27 | 1998-09-02 | Nec Corp | Semiconductor device and a method of manufacturing the same |
| KR100458081B1 (en) * | 1997-06-26 | 2005-02-23 | 주식회사 하이닉스반도체 | Method for forming via hole of semiconductor device to improve step coverage of metal layer |
| KR100459686B1 (en) * | 1997-06-27 | 2005-01-17 | 삼성전자주식회사 | Fabrication method of contact hole for semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2823878B2 (en) * | 1989-03-09 | 1998-11-11 | 触媒化成工業株式会社 | Method for manufacturing semiconductor integrated circuit |
| US5270267A (en) * | 1989-05-31 | 1993-12-14 | Mitel Corporation | Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate |
| JPH04158519A (en) * | 1990-10-22 | 1992-06-01 | Seiko Epson Corp | Manufacture of semiconductor device |
| JP2913918B2 (en) * | 1991-08-26 | 1999-06-28 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JPH0778816A (en) * | 1993-06-30 | 1995-03-20 | Kawasaki Steel Corp | Manufacture of semiconductor device |
-
1995
- 1995-05-22 KR KR1019950012711A patent/KR0172539B1/en not_active IP Right Cessation
-
1996
- 1996-05-04 TW TW085105671A patent/TW299467B/zh active
- 1996-05-15 GB GB9610103A patent/GB2301224B/en not_active Expired - Fee Related
- 1996-05-20 JP JP8124131A patent/JPH08330301A/en active Pending
- 1996-05-22 CN CN96110029A patent/CN1076869C/en not_active Expired - Fee Related
- 1996-05-22 DE DE19620677A patent/DE19620677B4/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1076869C (en) | 2001-12-26 |
| DE19620677B4 (en) | 2007-06-14 |
| KR960043018A (en) | 1996-12-21 |
| JPH08330301A (en) | 1996-12-13 |
| GB2301224A (en) | 1996-11-27 |
| TW299467B (en) | 1997-03-01 |
| DE19620677A1 (en) | 1996-11-28 |
| GB2301224B (en) | 1999-07-14 |
| KR0172539B1 (en) | 1999-03-30 |
| GB9610103D0 (en) | 1996-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20011226 Termination date: 20100522 |