GB9610103D0 - Method of forming a sog film in a semiconductor device - Google Patents

Method of forming a sog film in a semiconductor device

Info

Publication number
GB9610103D0
GB9610103D0 GBGB9610103.5A GB9610103A GB9610103D0 GB 9610103 D0 GB9610103 D0 GB 9610103D0 GB 9610103 A GB9610103 A GB 9610103A GB 9610103 D0 GB9610103 D0 GB 9610103D0
Authority
GB
United Kingdom
Prior art keywords
forming
semiconductor device
sog film
sog
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9610103.5A
Other versions
GB2301224A (en
GB2301224B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9610103D0 publication Critical patent/GB9610103D0/en
Publication of GB2301224A publication Critical patent/GB2301224A/en
Application granted granted Critical
Publication of GB2301224B publication Critical patent/GB2301224B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
GB9610103A 1995-05-22 1996-05-15 Method of forming a sog film in a semiconductor device Expired - Fee Related GB2301224B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012711A KR0172539B1 (en) 1995-05-22 1995-05-22 Method of forming s.o.g. in a semiconductor device

Publications (3)

Publication Number Publication Date
GB9610103D0 true GB9610103D0 (en) 1996-07-24
GB2301224A GB2301224A (en) 1996-11-27
GB2301224B GB2301224B (en) 1999-07-14

Family

ID=19415020

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9610103A Expired - Fee Related GB2301224B (en) 1995-05-22 1996-05-15 Method of forming a sog film in a semiconductor device

Country Status (6)

Country Link
JP (1) JPH08330301A (en)
KR (1) KR0172539B1 (en)
CN (1) CN1076869C (en)
DE (1) DE19620677B4 (en)
GB (1) GB2301224B (en)
TW (1) TW299467B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970052338A (en) * 1995-12-23 1997-07-29 김주용 Manufacturing method of semiconductor device
GB2322734A (en) * 1997-02-27 1998-09-02 Nec Corp Semiconductor device and a method of manufacturing the same
KR100458081B1 (en) * 1997-06-26 2005-02-23 주식회사 하이닉스반도체 Method for forming via hole of semiconductor device to improve step coverage of metal layer
KR100459686B1 (en) * 1997-06-27 2005-01-17 삼성전자주식회사 Fabrication method of contact hole for semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2823878B2 (en) * 1989-03-09 1998-11-11 触媒化成工業株式会社 Method for manufacturing semiconductor integrated circuit
US5270267A (en) * 1989-05-31 1993-12-14 Mitel Corporation Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
JPH04158519A (en) * 1990-10-22 1992-06-01 Seiko Epson Corp Manufacture of semiconductor device
JP2913918B2 (en) * 1991-08-26 1999-06-28 日本電気株式会社 Method for manufacturing semiconductor device
JPH0778816A (en) * 1993-06-30 1995-03-20 Kawasaki Steel Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
TW299467B (en) 1997-03-01
CN1076869C (en) 2001-12-26
GB2301224A (en) 1996-11-27
JPH08330301A (en) 1996-12-13
KR960043018A (en) 1996-12-21
DE19620677A1 (en) 1996-11-28
GB2301224B (en) 1999-07-14
KR0172539B1 (en) 1999-03-30
CN1140898A (en) 1997-01-22
DE19620677B4 (en) 2007-06-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100515