CN114026967A - 陶瓷基板制造方法 - Google Patents

陶瓷基板制造方法 Download PDF

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CN114026967A
CN114026967A CN202080046646.7A CN202080046646A CN114026967A CN 114026967 A CN114026967 A CN 114026967A CN 202080046646 A CN202080046646 A CN 202080046646A CN 114026967 A CN114026967 A CN 114026967A
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substrate
ceramic substrate
ceramic
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禹敬焕
李志炯
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Amosense Co Ltd
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Abstract

公开了一种陶瓷基板制造方法，其中，刻蚀铜片，然后将铜片结合到陶瓷基板上，使得陶瓷基板的总加工时间减少并且可靠性和产品寿命提高。所公开的陶瓷基板制造方法包括以下步骤：刻蚀铜片以制备金属基板；蚀刻陶瓷基板以制备单元陶瓷基板；组装金属基板和单元陶瓷基板；将金属基板和单元陶瓷基板结合以形成堆叠体；在堆叠体的表面上局部印刷金属糊状物；以及烧结金属糊状物。

Description

陶瓷基板制造方法
技术领域
本发明涉及一种陶瓷基板制造方法，更具体地涉及一种制造在陶瓷基板的表面上形成有电路的陶瓷基板的陶瓷基板制造方法。
背景技术
陶瓷基板通过将金属箔(诸如铜箔)整体地贴在陶瓷基板上而形成。陶瓷基板通过诸如活性金属钎焊(AMB)或直接敷铜(DBC)的制造工艺来产生，并且根据制造工艺的不同，也可分为陶瓷AMB基板、陶瓷DBC基板等。
陶瓷AMB基板采用活性金属钎焊(AMB)方法制造，活性金属钎焊方法用于将金属直接钎焊在陶瓷基板的表面上，无需在陶瓷基板的表面上进行金属化(或金属布线)。
由于陶瓷AMB基板具有高散热性和可靠性，因此它被应用于诸如车辆、风力涡轮和高压DC输电之类的应用。
然而，存在的问题是，当电极电路由0.8T或更多的铜形成时，陶瓷基板在刻蚀过程中的刻蚀时间增加且在电路之间具有距离(间隔)。
此外，可以在局部镀覆期间形成铜电路之后，使用光刻法来仅通过无电镀制造陶瓷AMB基板。因此，存在的问题是，在进行了防止铜电路的侧面被镀覆的处理之后，需要进行无电镀工艺。
此外，如果陶瓷AMB基板通过双面冷却(DSC)来制造，则在两个基板之间插入间隔件(spacer)，并且通过焊接来将两个基板与间隔件结合。此时，因为间隔件的热膨胀系数和导热率与陶瓷AMB基板相冲突，因此陶瓷AMB基板在制造后存在许多问题，。
此外，陶瓷AMB基板具有的问题是，由于基板和间隔件通过焊接结合，因此结合力降低。
发明内容
【技术问题】
本发明是为了解决传统问题而提出，并且本发明的目的在于提供一种陶瓷基板制造方法，该陶瓷基板制造方法刻蚀铜片并将铜片结合到陶瓷基板上，从而缩短了陶瓷基板的整个工艺时间并提高了产品的可靠性和使寿命。
本发明的另一目的在于提供一种陶瓷基板制造方法，该陶瓷基板制造方法刻蚀铜片，然后在铜片上局部镀覆，从而提高了电路图案与铜片之间紧密接触力并去除了由于无电镀造成的污迹。
本发明的又一目的在于提供一种陶瓷基板制造方法，该陶瓷基板制造方法使用导热率和热膨胀系数与陶瓷基板的导热率和热膨胀系数相匹配的间隔件通过钎焊方法来与陶瓷基板结合，从而确保了陶瓷基板的可靠性。
【技术方案】
为实现上述目的，根据本发明的第一示例性实施例的陶瓷基板制造方法包括通过刻蚀铜片制备金属基板；通过刻蚀陶瓷基板制备单元陶瓷基板；组装金属基板和单元陶瓷基板；通过将金属基板和单元陶瓷基板结合形成堆叠体；在堆叠体表面上局部印刷金属糊状物；以及烧结金属糊状物。
组装可以包括使用钎焊夹具组装金属基板和单元陶瓷基板以使金属基板设置在单元陶瓷基板的两个表面上，并且金属糊状物可以是Ag糊状物。
为实现上述目的，根据本发明的第二示例性实施例的陶瓷基板制造方法包括通过在铜片的一部分上镀覆金属形成镀覆基板；通过刻蚀镀覆基板制备金属基板；通过刻蚀陶瓷基板制备单元陶瓷基板；以及组装金属基板和单元陶瓷基板。形成镀覆基板可以包括通过在铜片上局部电镀Ni和Ag来形成金属镀层，并且组装可以包括使用钎焊夹具组装金属基板和单元陶瓷基板以使金属基板设置在单元陶瓷基板的两个表面上。
为实现上述目的，根据本发明的第三示例性实施例的陶瓷基板制造方法包括在陶瓷基板之间设置间隔件，以及将间隔件与陶瓷基板钎焊并结合，其中该设置包括设置导热率和热膨胀系数各自等于或大于参考值的间隔件。此时，间隔件的导热率参考值可以为240W/m.K，并且间隔件的热膨胀系数的参考值可以为6.8ppm/m.K。
【有益效果】
根据本发明的示例性实施例的陶瓷制造方法，可以刻蚀铜片，然后将铜片结合到陶瓷基板上，从而缩短陶瓷基板的整个工艺时间。
根据本发明的示例性实施例的陶瓷制造方法，可以刻蚀铜片，然后将铜片结合到陶瓷基板上以形成应力消除边缘结构(stress relief edge structure)，从而提高产品的可靠性和寿命。
根据本发明的示例性实施例的陶瓷制造方法，可以刻蚀铜片，然后在铜片上局部镀覆，从而提高电路图案和铜片之间的结合力并去除由于无电镀造成的玷污。
根据本发明的示例性实施例的陶瓷制造方法，可以刻蚀铜片，然后在铜片上局部镀覆。因此，即使当电路图案由厚的铜形成时也可以应用该方法。
根据本发明的示例性实施例的陶瓷制造方法，可以使用具有热膨胀系数为6.8ppm/m.K、导热率为240W/m.K的优异热性质的间隔件，通过钎焊方法来与陶瓷基板结合。可以确保非常优异的结合力和陶瓷基板的高可靠性和高热性质。
附图说明
图1是用于说明常规陶瓷基板制造方法的图。
图2是用于说明根据本发明的第一示例性实施例的陶瓷基板制造方法的图。
图3和图4是用于说明根据本发明的第二示例性实施例的陶瓷基板制造方法的图。
图5至图7是用于说明根据本发明的第三示例性实施例的陶瓷基板制造方法的图。
具体实施方式
在下文中，将参照附图描述本发明的最优选示例性实施例，以便具体地描述本发明，使得本发明所属领域的技术人员可以容易地贯彻本发明的技术精神。首先，在为各图的部件添加附图标记时，应当注意，相同的部件尽可能具有相同的附图标记，即使它们在不同的附图中示出。此外，在描述本发明时，当确定相关公知构造或功能的详细描述可能使本发明的主题模糊时，将省略其详细描述。
参照图1，在常规陶瓷基板制造方法中，陶瓷AMB基板10通过原材料制备过程、钎焊过程、光刻过程、镀覆过程、CU刻蚀过程、种子刻蚀过程、TiN刻蚀过程、激光划片过程和断裂过程来制造。
在原材料制备过程中，制备铜片11和陶瓷基板12作为原材料。在原材料制备过程中，将铜片11分别堆叠在陶瓷基板12的上表面和下表面上。
在钎焊过程中，在原材料制备过程中堆叠的铜片11和陶瓷基板12通过对其施加恒定温度来结合。在钎焊过程中，通过将铜片11和陶瓷基板12结合而形成其中铜片11堆叠且结合在陶瓷基板12的两个表面上的堆叠体13。
通过光刻过程、镀覆过程、铜刻蚀过程、种子刻蚀过程、TiN刻蚀过程和激光划片过程，在堆叠体13上形成具有预定形状的电路图案。
在断裂过程中，通过使其上形成有电路图案的堆叠体13以单位尺寸断裂来产生最终的陶瓷AMB基板10。
然而，常规陶瓷基板制造方法具有的问题是，如果电极电路由0.8T或更多的铜形成，则刻蚀过程中的刻蚀时间增加且电路之间存在距离(间隔)。
因此，根据本发明的第一示例性实施例的陶瓷基板制造方法通过刻蚀铜片，然后将铜片结合到陶瓷基板上来制造陶瓷AMB基板而解决上述问题。
参照图2，在根据本发明的第一示例性实施例的陶瓷基板制造方法中，陶瓷AMB基板通过原材料制备过程、组装过程、钎焊过程、部分Ag印刷过程和糊状物烧结过程来制造。
在原材料制备过程中，通过将铜片110刻蚀成预定的尺寸和形状来制备金属基板112。在原料制备过程中，通过将在其上形成有图案的陶瓷基板120刻蚀成预定尺寸和形状来制备单元陶瓷基板122。此时，在原材料制备过程中，可以将设置在单元陶瓷基板122的上表面和下表面上的金属基板112刻蚀成不同的尺寸或形状。
在组装过程中，组装金属基板112和单元陶瓷基板122。此时，在组装过程中，使用钎焊夹具将金属基板112设置在单元陶瓷基板122的两个表面上。
在钎焊过程中，在金属基板112组装到单元陶瓷基板122的两个表面上的状态下，通过对其施加恒定温度来使金属基板112和单元陶瓷基板122结合。在钎焊过程中，通过将金属基板112和单元陶瓷基板122结合来形成其中金属基板112粘接在单元陶瓷基板122的两个表面上的堆叠体130。此时，在钎焊过程中，使用填充金属来将金属基板112和单元陶瓷基板122结合。这里，填充金属具有例如通过用Cu和Ag镀覆而形成的多层结构。
在局部印刷过程中，将Ag糊状物140局部印刷在堆叠体130的表面上。在糊状物烧结过程中，通过N2回流方法烧结Ag糊状物140来制造最终状态的陶瓷AMB基板100。
如上所述，根据本发明的第一示例性实施例的陶瓷基板制造方法是一种刻蚀铜电极，然后将铜电极结合在陶瓷上的方法，类似于模具冲压方法。根据该陶瓷基板制造方法，可以制造陶瓷AMB基板，这缩短了整个工艺时间(省略了诸如种子刻蚀和TiN刻蚀的过程)，并通过形成应力消除边缘结构而提高了产品的可靠性和寿命。
同时，常规陶瓷基板制造方法存在的问题是，因为在局部镀覆形成铜电路后使用光刻法来仅通过无电镀制造陶瓷基板，因此在进行防止铜电路的侧表面被镀覆的处理之后必须进行化学镀过程。
因此，根据本发明的第二示例性实施例的陶瓷基板制造方法通过刻蚀铜片，然后在铜片上局部镀覆制造陶瓷AMB基板来解决上述问题。
参照图3和图4，在根据本发明的第二示例性实施例的陶瓷基板制造方法中，通过局部Ni-Ag镀覆过程、原材料制备过程和组装过程来制造陶瓷AMB基板。
局部Ni-Ag镀覆过程包括在铜片上局部镀覆Ni和Ag。此时，在局部Ni-Ag镀覆过程中，通过局部镀覆来产生铜片局部镀覆有Ni和Ag的镀覆基板210。
在原材料制备过程中，通过将镀覆基板210刻蚀成预定尺寸和形状来制备金属基板212。在原料制备过程中，通过将在其上形成有图案的陶瓷基板220刻蚀成预定尺寸和形状来制备单元陶瓷基板222。
在组装过程中，组装金属基板212和单元陶瓷基板222。此时，在组装过程中，通过使用钎焊夹具组装金属基板212和单元陶瓷基板222以使金属基板212设置在单元陶瓷基板222的上表面和下表面上来制造最终的陶瓷AMB基板200。
根据本发明的第二示例性实施例的陶瓷基板制造方法是一种预先刻蚀铜电极以将铜电极结合到陶瓷的方法，类似于模具冲压方法。根据该陶瓷基板制造方法，可以制造陶瓷AMB基板200，这缩短了整个工艺时间(省略了诸如种子刻蚀和TiN刻蚀的过程)，并通过形成应力消除边缘结构(图4的A)而提高了产品的可靠性和寿命。
此外，根据本发明第二示例性实施例的陶瓷基板制造方法，通过模具冲压预先形成每种原材料并立即将通过刻蚀刻蚀的铜电极结合到已经形成有图案的陶瓷上来制造陶瓷AMB基板。因此，可以制造使用传统刻蚀法形成铜电极的制造方法无法制造的厚铜电极产品，并提供许多效果，诸如实现了消除应力的结构和去除了结合表面上的空隙缺陷。
同时，在常规陶瓷基板制造方法中，用于双面冷却(DSC)的陶瓷AMB基板由于间隔件的热膨胀系数和导热率与陶瓷AMB基板冲突而存在许多问题，并且由于基板和间隔件通过焊接结合而存在结合力降低的问题。
因此，根据本发明的第三示例性实施例的陶瓷基板制造方法使用热膨胀系数和导热率与陶瓷AMB基板热膨胀系数和导热率的相匹配的间隔件，通过采用钎焊方法来与陶瓷基板结合来制造用于DSC的陶瓷AMB基板而解决上述问题。
参照图5，在根据本发明的第三示例性实施例的陶瓷基板制造方法中，使用具有热膨胀系数为6.8ppm/m.K和导热率为240W/m.K的优异热性质的间隔件300，通过采用钎焊方法来与陶瓷基板400结合来制造用于DSC的陶瓷AMB基板500。这里，陶瓷基板500例如是根据第一或第二示例性实施例的上述陶瓷基板制造方法制造的陶瓷AMB基板。当然，陶瓷基板500也可以是采用另一种陶瓷基板制造方法制造的陶瓷DBC基板。
由于铜的热膨胀系数和导热率分别为17ppm/K和390W/m.K，因此当在焊接过程中使用由Cu或CuMo材料制成的常规间隔件来与陶瓷基板结合时，会出现陶瓷基板(DBC或AMB)因热膨胀系数的不同而无法结合的问题。
因此，参照图6和图7，在根据本发明的第三示例性实施例的陶瓷基板制造方法中，具有优异结合力和高可靠性和高热性质的用于DSC的陶瓷AMB基板500可以使用具有热膨胀系数为6.8ppm/K和导热率为240W/m.K的热性能的间隔件300通过钎焊工艺与陶瓷基板400结合来制造。
尽管上面已经描述了本发明的优选示例性实施例，但是应当理解，可以以各种形式修改本发明，并且本领域技术人员可以在不脱离本发明的权利要求的范围的情况下实施各种修改示例和改变示例。

Claims (8)

1.一种陶瓷基板制造方法，所述方法包括：
通过刻蚀铜片制备金属基板；
通过刻蚀陶瓷基板制备单元陶瓷基板；
组装所述金属基板和所述单元陶瓷基板；
通过将所述金属基板和所述单元陶瓷基板结合来形成堆叠体；
在堆叠体的表面上局部印刷金属糊状物；以及
烧结所述金属糊状物。
2.根据权利要求1所述的方法，
其中，所述组装包括使用钎焊夹具组装所述金属基板和所述单元陶瓷基板以使所述金属基板设置在所述单元陶瓷基板的两个表面上。
3.根据权利要求1所述的方法，
其中，所述金属糊状物是Ag糊状物。
4.一种陶瓷基板制造方法，所述方法包括：
通过在铜片的一部分上镀覆金属来形成镀覆基板；
通过刻蚀所述镀覆基板制备金属基板；
通过刻蚀陶瓷基板制备单元陶瓷基板；以及
组装所述金属基板和所述单元陶瓷基板。
5.根据权利要求4所述的方法，
其中，形成所述镀覆基板包括通过在所述铜片上局部镀覆Ni和Ag来形成金属镀层。
6.根据权利要求4所述的方法，
其中，所述组装包括使用钎焊夹具组装所述金属基板和所述单元陶瓷基板以得所述金属基板设置在所述单元陶瓷基板的两个表面上。
7.一种陶瓷基板制造方法，所述方法包括：
在陶瓷基板之间设置间隔件，以及
将所述间隔件与所述陶瓷基板钎焊并结合，
其中，所述设置包括设置导热率和热膨胀系数各自等于或大于参考值的间隔件。
8.根据权利要求7所述的方法，
其中，间隔件的导热率的参考值为240W/m.K，并且间隔件的热膨胀系数的参考值为6.8ppm/m.K。
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