CN114025916A - 合成磨石 - Google Patents
合成磨石 Download PDFInfo
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- CN114025916A CN114025916A CN202080047180.2A CN202080047180A CN114025916A CN 114025916 A CN114025916 A CN 114025916A CN 202080047180 A CN202080047180 A CN 202080047180A CN 114025916 A CN114025916 A CN 114025916A
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Abstract
在对晶片S进行化学机械磨削的合成磨石(100)中具备:以平均粒径为10μm以下的氧化铈作为主成分,对晶片S具有化学机械磨削作用的研磨剂(101);以比晶片S的莫氏硬度低、且具有高摩擦系数的纤维物质作为主成分,具有发热作用的摩擦促进剂(102);以酚醛树脂作为主成分,将研磨剂(101)和摩擦促进剂(102)分散、粘结的粘结剂(103)。
Description
技术领域
本发明涉及用于对硅晶片等被磨削物的表面进行磨削加工的合成磨石。
背景技术
在半导体制造领域中,成为半导体元件基板的硅晶片的表面加工通常将单晶硅锭切片而成的晶片经由包装工序、蚀刻工序、抛光工序等数步工序而精加工成镜面。在包装工序中,获得平行度、平坦度等尺寸精度、形状精度。接着,在蚀刻工序中,去除包装工序中形成的加工改性层。进一步,在抛光工序中,通过化学机械抛光(以下称为“CMP”)而形成保持了良好的形状精度且具有镜面级表面粗糙度的晶片。另外,在半导体后工序中去除被称为背磨的磨削加工的损伤时,也可以使用与其等同的抛光工序。
近年来,使用了基于干式的化学机械磨削(以下称为“CMG”)的表面加工来代替抛光工序的方法(例如,参照专利文献1)。在CMG工序中,使用通过硬质树脂等树脂粘结剂将研磨剂(磨粒)固定而成的合成磨石。然后,使晶片及合成磨石一边旋转,一边将合成磨石按压于晶片(例如,参照专利文献2)。在晶片表面的凸部,通过与合成磨石的摩擦,微细的加工起点被加热/氧化,变脆,剥落。由此,仅使晶片的凸部被磨削,变得平坦化。
另外,提出了通过在CMG工序中提高磨削速率而提高加工效率的合成磨石(例如,参照专利文献3)。
现有技术文献
专利文献
专利文献1:日本专利第4573492号公报
专利文献2:日本特开2004-87912号公报
专利文献3:日本特开2016-82127号公报
发明内容
发明要解决的课题
上述的合成磨石存在如下问题。即,如上所述,在CMG工序中,由于以利用固体间的化学反应除去材料作为加工原理,因此,如果不使反应热充分上升,则无法提升加工速度。而且,也存在从合成磨石游离出的研磨剂在伴随合成磨石或晶片的旋转的离心力的作用下被排出,与磨削作用无关,加工速度降低的问题。
因此,本发明是为了解决上述课题而完成的,其目的在于提供实现磨削加工中的高磨削效率的合成磨石。
解决课题的方法
本实施方式的合成磨石具备:对被磨削材料具有化学机械磨削作用的研磨剂、摩擦促进剂、以及将上述研磨剂和上述摩擦促进剂粘结的粘结剂。
本实施方式的合成磨石具备对被磨削材料具有化学机械磨削作用的研磨剂、以及粘结上述研磨剂的粘结剂,上述粘结剂中含浸有具有增粘作用的增粘剂,或者用低熔点蜡溶解含浸有上述增粘剂。
发明的效果
通过促进磨削加工中的摩擦所引起的发热而在短时间谋求温度上升,能够实现高磨削效率。
附图说明
图1是示出导入了本发明的第1实施方式的合成磨石的CMG装置的立体图。
图2是示出该合成磨石的立体图。
图3是示出该合成磨石的结构的说明图。
图4是示出该合成磨石的作用原理的说明图。
图5是示出本发明的第2实施方式的合成磨石的结构及制造方法的说明图。
图6是示出该合成磨石的作用原理的说明图。
图7是示出本发明的第3实施方式的合成磨石的结构及制造方法的说明图。
图8是示出该合成磨石的作用原理的说明图。
符号说明
10…CMG装置、20…旋转工作台机构、21…工作台电动机、22…工作台轴、23…工作台、30…磨石支撑机构、31…架台、32…摆动轴、33…臂、40…磨石驱动机构、41…旋转电动机部、42…旋转轴、43…磨轮保持构件、100,100A…合成磨石、101…研磨剂、102…摩擦促进剂、103…粘结剂、104…增粘剂、200…合成磨石、201…研磨剂、202…粘结剂、203…增粘剂、S…晶片。
具体实施方式
图1~图4是示出本发明的第1实施方式的图。需要说明的是,在这些图中,S表示作为磨削对象的硅晶片(被磨削物)。如图1所示,CMG装置10具备支撑晶片S的旋转工作台机构20和后述的支撑合成磨石100的磨石支撑机构30。CMG装置10构成了晶片处理装置的一部分。CMG装置10通过运送机器人等将晶片S运入/运出。
旋转工作台机构20具备:配置于地面的工作台电动机21、从该工作台电动机21向上方凸出配置的工作台轴22、以及安装在该工作台轴22的上端的工作台23。工作台23具有可拆卸地保持作为磨削对象的晶片S的机构。作为进行保持的机构,例如有真空吸附机构。
磨石支撑机构30具备:配置于地面且在内部容纳电动机的座架31、受到该座架31支撑且通过座架31内的电动机沿图1中箭头方向摆动的竖直方向的摆动轴32、设置在该摆动轴32的上端且沿水平方向延伸设置的臂33、以及设置在该臂33的前端侧的磨石驱动机构40。
磨石驱动机构40具备旋转电动机部41。旋转电动机部41具备向下方凸出的旋转轴42。在旋转轴42的前端部安装有圆板状的磨轮保持构件43。如图2所示,在磨轮保持构件43可拆卸地安装有圆板状的合成磨石100。在合成磨石100的安装时,将螺栓从磨轮保持构件43侧拧入设置于合成磨石100的螺纹孔进行安装。
如图3所示,合成磨石100具有对晶片S有化学机械磨削作用的研磨剂101,使摩擦促进剂102分散于该研磨剂101并通过粘结剂103进行粘结,形成了气孔。研磨剂101可以根据被磨削材料的材质而适当选择,在晶片S为硅材料制的情况下,优选以平均粒径为10μm以下的氧化铈作为主成分。需要说明的是,除了氧化铈以外,还可以应用氧化硅、氧化铁、氧化钛、氧化铬,也可以是它们的混合物。
摩擦促进剂102以比晶片S的莫氏硬度低、且具有高摩擦系数的纤维物质作为主成分。纤维物质可以应用晶须(从结晶表面向外侧以胡须状生长的结晶)、纤维中的任一种、或混合物。作为晶须,优选为机械强度大的氧化物类晶须及碳化物类晶须。作为纤维,优选为纤维素纤维及碳纤维。粘结剂103以酚醛树脂、氨基甲酸酯树脂、环氧树脂等有机化合物类树脂或低熔点玻璃质粘结剂作为主成分。
需要说明的是,合成磨石100的组成例如是研磨剂101为40~55体积%、摩擦促进剂102为1~5体积%、粘结剂103为9~30体积%。另外,合成磨石100的气孔率为10~50体积%。气孔中可填充摩擦促进剂102。
这样构成的合成磨石100被安装于CMG装置10,如下所述对晶片S进行磨削。即,将合成磨石100安装于磨轮保持构件43。接下来,通过运送机器人将晶片S安装于工作台23。
接着,发动工作台电动机21,使工作台23沿图1中的箭头方向旋转。另外,发动旋转电动机部41,使磨轮保持构件43及合成磨石100沿图1中的箭头方向旋转。使合成磨石100的圆周速度以例如600m/min进行旋转,并且以加工压力300g/cm2按压晶片S侧。进一步,使摆动轴32沿图1中的箭头方向摆动。通过这些连动,合成磨石100和晶片S发生滑动。
将此时的合成磨石100与晶片S的关系示于图4。在加工开始时,合成磨石100和晶片S发生滑动,对粘结剂103施加外力。通过该外力连续地作用,粘结剂103松弛,研磨剂101及软质的摩擦促进剂102脱落至晶片S上。游离的研磨剂101缠绕于纤维状的摩擦促进剂102,在合成磨石100与晶片S的间隙滑动。研磨剂101具有化学抛光作用,通过在晶片S表面长时间滞留,可提高化学抛光作用的机会频率。
另一方面,摩擦促进剂102通过与晶片S表面及研磨剂101摩擦,反复进行微观上的凝聚和剥离。通过该动作起到制动作用,产生摩擦热。由于在研磨剂101及粘结剂103与晶片S之间也产生摩擦热,因此也加入该摩擦热中。图4中H示出了在合成磨石100与晶片S的间隙产生的摩擦热从晶片S表面向晶片S内部扩散的情况。
CMG工序的加工量L可以由Preston公式得出。即,由L=k·P·V·t(k:Preston系数、P:磨石面压力、V:磨石相对速度、t:加工时间)表示。作为促进抛光效率(V/t)的比例常数k的主要因素之一,有热影响。
热化学反应式通常由阿伦尼乌斯方程表示为k(速度常数)=Aexp(-E/RT)(A:反应系数、E:活化能、R:气体常数、T:绝对温度),与绝对温度T成正相关。因此,在通过增大发热量而在加工气体氛围中产生热时,成为化学作用的驱动能量,化学反应受到促进,加工量增加。
另一方面,摩擦系数μ和产生热量Q由通常的公式ΔQ=μ·ΔW·v/J(ΔW:施加的做功量、v:滑动速度、J:将做功量转换成热量的换算常数)表示,因此,因摩擦系数的增大,绝对温度T表示为Q的积分值。因此,摩擦系数、特别是动摩擦系数越大,温度上升也越大。
由此,使用摩擦促进剂102通过晶片S表面的温度上升促进化学反应,提高磨削效率,从而能够缩短利用CMG装置10及合成磨石100进行晶片S的表面磨削的加工时间。
根据本实施方式的合成磨石100,通过将摩擦促进剂102所带来的温度上升效果及研磨剂101的滞留效果进行组合,能够提高磨削效率,缩短加工时间。
图5~图6是示出本发明的第2实施方式的图。在这些图中,对与图1~图4相同功能的部分赋予相同符号,并省略其详细说明。本发明的第2实施方式的合成磨石100A与上述的合成磨石100同样地安装于CMG装置10。
合成磨石100A对合成磨石100加入了增粘剂104。增粘剂104的主成分例如为甘油。需要说明的是,除甘油以外,也可以为二醇,还可以为它们的混合物。另外,作为增粘剂104的添加方法,可以直接混合,也可以如图5所示,使其含浸于用低熔点蜡溶解甘油等而得到的混合物中。
这样构成的合成磨石100A安装于CMG装置10,与上述的合成磨石100同样地对晶片S进行磨削。
将此时的合成磨石100A与晶片S的关系示于图6。加工开始时,合成磨石100A和晶片S发生滑动,对粘结剂103施加外力。通过该外力连续地作用,粘结剂103松弛,研磨剂101及软质的摩擦促进剂102脱落至晶片S上。游离的研磨剂101缠绕于纤维状的摩擦促进剂102,在合成磨石100A与晶片S的间隙滑动。研磨剂101具有化学抛光作用,通过在晶片S表面长时间滞留,可提高化学抛光作用的机会频率。
另外,通过合成磨石100A与晶片S之间的滑动及摩擦促进剂102的滑动,产生摩擦热。由此,与低熔点蜡一起含浸在合成磨石100A内部的增粘剂104成分、即甘油开始溶出。低熔点蜡的分子量小,因此合成磨石100A与晶片S间的润滑作用受到限制。与该低熔点蜡同样地溶出的增粘剂104在合成磨石100A与晶片S之间成为高粘度的液体M。
其结果是,在合成磨石100A与晶片S的极其狭窄的间隙中成为具有高剪切应力的液体,结果产生摩擦热。产生的摩擦热容易保留在液体M内,通过温度上升而促进化学反应,提高磨削效率。因此,能够缩短利用CMG装置10及合成磨石100A进行晶片S的表面磨削的加工时间。图6中H示出了在合成磨石100A与晶片S的间隙产生的摩擦热从晶片S表面扩散至晶片S内部的情况。需要说明的是,由于研磨剂101被捕获在高粘度的液体N内,因此,研磨剂101的排出作用受到抑制,研磨剂101的滞留时间延长,由此也具有提高化学抛光作用的机会频率的效果。
根据本实施方式的合成磨石100A,通过将摩擦促进剂102及增粘剂104带来的温度上升效果及研磨剂101的滞留效果进行组合,可以提高磨削效率,缩短加工时间。
图7~图8是示出本发明的第3实施方式的图。在这些图中,对与图1~图6相同功能的部分赋予相同符号,并省略其详细说明。本发明的第2实施方式的合成磨石200与上述的合成磨石100同样地安装于CMG装置10。
合成磨石200由对晶片S具有化学机械磨削作用的研磨剂201和将该研磨剂201分散、粘结的粘结剂202形成。另外,具有增粘作用的增粘剂203溶解于低熔点蜡,并如图7所示含浸于粘结剂202中。
研磨剂201可以根据被磨削材料的材质而适当选择,在晶片S为硅材料制的情况下,优选以平均粒径为10μm以下的氧化铈作为主成分。需要说明的是,除氧化铈以外,也可以应用氧化硅、氧化铁,还可以是它们的混合物。
粘结剂202以酚醛树脂等有机物或低熔点玻璃质粘结剂作为主成分。增粘剂203的主成分例如为甘油。需要说明的是,除甘油以外,也可以为二醇,还可以为它们的混合物。另外,作为增粘剂203的添加方法,可以直接混合,也可以如图7所示,使其含浸于用低熔点蜡溶解甘油等而得到的混合物中。
这样构成的合成磨石200安装于CMG装置10,如下所述对晶片S进行磨削。即,将合成磨石200安装于磨轮保持构件43。接着,通过运送机器人将晶片S安装于工作台23。
接下来,驱动工作台电动机21,使工作台23沿图1中箭头方向旋转。另外,驱动旋转电动机部41,使磨轮保持构件43及合成磨石100沿图1中箭头方向旋转。例如,在使合成磨石200以600m/min的圆周速度旋转的同时,以加工压力300g/cm2对晶片S侧进行按压。进一步,使摆动轴32沿图1中箭头方向摆动。通过这些连动,合成磨石200和晶片S发生滑动。
将此时的合成磨石200与晶片S的关系示于图8。在加工开始时,合成磨石200和晶片S发生滑动,对粘结剂202施加外力。通过该外力连续地作用,粘结剂202松弛,研磨剂201脱落至晶片S上。研磨剂201具有化学抛光作用,开始晶片S表面的磨削。
另一方面,通过合成磨石200与晶片S之间的滑动,产生摩擦热。由此,与低熔点蜡一起含浸在合成磨石200内部的增粘剂203成分、即甘油开始溶出。低熔点蜡的分子量小,因此合成磨石200与晶片S之间的润滑作用受到限制。与该低熔点蜡同样地溶出的增粘剂203在合成磨石200与晶片S之间成为高粘度的液体N。
其结果是,在合成磨石200与晶片S的极薄的间隙中成为具有高剪切应力的液体,结果产生摩擦热。产生的摩擦热容易保留在液体N内,通过温度上升而促进化学反应,提高磨削效率。因此,能够缩短利用CMG装置10及合成磨石200进行晶片S的表面磨削的加工时间。图8中H示出了在合成磨石200与晶片S的间隙产生的摩擦热从晶片S表面扩散至晶片S内部的情况。需要说明的是,由于研磨剂201被捕获在高粘度的液体N内,因此,研磨剂201的排出作用受到抑制,研磨剂201的滞留时间延长,由此也具有提高化学抛光作用的机会频率的效果。
这样,可以在使用增粘剂203促进晶片S表面的温度上升的同时,使研磨剂201停止在工作面。因此,通过提高磨削效率,可以缩短利用CMG装置10及合成磨石200进行晶片S的表面磨削的加工时间。
根据本实施方式的合成磨石200,通过将增粘剂203带来的温度上升效果及研磨剂201的滞留效果进行组合,可以提高磨削效率,缩短加工时间。
需要说明的是,本发明并不限定于上述实施方式,在实施阶段,可以在不脱离其主旨的范围进行各种变形。另外,各实施方式也可以适当组合而实施,在这样的情况下可以得到组合的效果。此外,上述实施方式包含了各种发明,可以从选自公开的多个构成要件的组合中提取出各种发明。例如,在即使从实施方式中示出的全部构成要件中删除若干构成要件也能够解决技术问题而获得效果的情况下,可以将删除了该构成要件的构成作为发明。
Claims (9)
1.一种合成磨石,其是对被磨削材料进行化学机械磨削的合成磨石,其具备:
对所述被磨削材料具有化学机械磨削作用的研磨剂、
摩擦促进剂、以及
粘结所述研磨剂和所述摩擦促进剂的粘结剂。
2.根据权利要求1所述的合成磨石,其中,
所述研磨剂以氧化铈、氧化硅、氧化铁、氧化钛、氧化铬中的任一种或混合物作为主成分,平均粒径为10μm以下。
3.根据权利要求1所述的合成磨石,其中,
所述摩擦促进剂以比所述被磨削材料的莫氏硬度低、且具有高摩擦系数的纤维物质作为主成分。
4.根据权利要求3所述的合成磨石,其中,
所述摩擦促进剂以晶须、纤维中的任一种或混合物作为主成分。
5.根据权利要求1所述的合成磨石,其中,
所述粘结剂以有机化合物类树脂或低熔点玻璃质粘结剂作为主成分。
6.根据权利要求1所述的合成磨石,其中,
所述粘结剂中含浸有具有增粘作用的增粘剂,或者
所述增粘剂被低熔点蜡溶解而含浸于所述粘结剂中。
7.根据权利要求6所述的合成磨石,其中,
所述增粘剂以甘油或二醇中的至少一者作为主成分。
8.一种合成磨石,其是对被磨削材料进行化学机械磨削的合成磨石,其具备:
对所述被磨削材料具有化学机械磨削作用的研磨剂、以及
粘结所述研磨剂的粘结剂,
所述粘结剂中含浸有具有增粘作用的增粘剂,或者
所述增粘剂被低熔点蜡溶解而含浸于所述粘结剂中。
9.根据权利要求8所述的合成磨石,其中,
所述增粘剂以甘油或二醇中的至少一者作为主成分。
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EP3995255A4 (en) | 2023-07-12 |
TWI772824B (zh) | 2022-08-01 |
JP6779541B1 (ja) | 2020-11-04 |
US20220088746A1 (en) | 2022-03-24 |
JP2021008016A (ja) | 2021-01-28 |
TW202106848A (zh) | 2021-02-16 |
WO2021002216A1 (ja) | 2021-01-07 |
EP3995255A1 (en) | 2022-05-11 |
KR20220006106A (ko) | 2022-01-14 |
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