M398464 . » * 五、新型說明 〔新型所屬之技術領域〕 本創作係有關一種用於矽晶圓或晶棒之晶面研磨及 ， 拋光用途的鑽石研磨拋光輪，特別是指一種適合用於太陽 能晶片製程之研磨及拋光用途的饼石研磨抱光輪， ' [先前技術〕 ' 按在半導體製程中，必須先將矽晶圓或晶棒切割 鲁 後’再於切割後之矽晶片的晶面上進行後續的加工，但因 為切片之後的矽晶®或晶棒之晶面仍未具有合乎半導敢 製程要求的平坦度*必須先經過研磨及拋光才能進行後續 的金屬沈積、長晶、電路製作等製程，因此研磨及抛光， 是半導體製程中，相當關鍵的製程技術。 一般半導體製程中，對於晶片平面度與表面光度的 要求極高’必須經由拋光製程才能達到符合要求的水準， • 但由於抛光過程中的表面磨除量相當地少，對於晶片表面 的尺寸及平面度等誤差無法作大幅度的改善，因此必須先 以耝磨輪先對晶片表面研磨使得晶片材料表面達到尺寸 以及平面度的要求後，再進行拋光的製程*以獲得一表面 光度極佳的晶面，以符合半導體製程的需求》 以太陽能矽基板製程為例，通常是利用鑽石磨輪或 粗毛刷輪對晶圓或晶棒切割後的晶面進行初步的研磨加 工：然後再利用一個細磨輪或細毛别輪對研磨後的晶面進 行拋光。 3 M398464 然而習用的研磨及拋光製程中，粗磨輪與細拋光輪 的切削特性並不相同，粗磨輪的切削量大，能夠快速地移 除材料，使晶面達到平面度及傾斜度的要求，但是其研磨 過的表面光度無法達到要求；而細磨輪或細毛刷輪所能移 除的材料非常地少，對於晶面的協度與平面度的改善沒有 太大效益，但是其研磨過的表面可以達到較佳的表面光 度’因此在習用的製程技術中，都是將研磨及拋光製程分 開’先利用研磨輪對晶面研磨後，再以細磨輪或細毛刷輪 對晶面拋光，因此必須以二道不同的製程進行加工，如此 一來其產生主要缺點有下列幾項： 1 ·需要利用二道工序分別進行研磨及拋光，造成製程費時 費工的情形。 2. 用粗磨輪研磨再用細磨輪拋光，將會造成表面應力殘 留，造成破片。 3. 粗磨輪及細磨輪或細毛刷輪都是耗材，研磨與拋光都必 須分別準備不同的磨輪或毛刷輪，造成資材及庫存管理 作業的不便。 由於以上原因，使得習用的矽晶忖料研磨及拋光用 磨輪有進一步改良之需求，創作人有燔於此，乃苦思細 索，稍極研究，加以多年從事相關產品研究之經驗，並經 不斷試驗及改良，終於發展出本創作。 〔新型内容〕 本創作之目的*在提供一種使用於矽晶材料研磨及 M398464 抱光’而且可以於一道研磨工序中同時完成研磨及拋光作 業的鑽石研磨拋光輪。 本創作主要技術内容，係為該研磨輪，包括有一概 呈圓盤狀的研磨盤，在研磨盤的底面外圍設置一環狀的粗 磨盤’並且於粗磨盤的内側設置一個由多教拋光刷毛構成 的彳垃光盤。前述拋光盤的拋光刷毛係略微突出於粗磨盤之 底面’因此使得該研磨盤對矽晶圓或晶棒之晶面進行研磨 ' 時’可先行以粗磨盤對晶面進行研磨後，再後續以拋光盤 &對晶面進行抛光 本創作藉由外環的研磨輪及内圈的拋光盤相互組 合’係可將傳統晶片研磨用的粗磨盤與細毛刷輪結合為一 個裝置’且能夠於同一道工序中完成研磨及抱光的程序， 不需要分為二道工序加工，因此可大幅地節省研磨加工的 工時與加工成本，且簡化磨輪耗材庫存管理的負擔。而且 能夠在晶面研磨完成後立刻進行抛光，以避免晶面研磨 • 後’因為表面微小加工瑕疵，造成應力殘衍，導致晶面材 料破碎而使良率下降之問題產生。 本創作為達到上述及其他目的，其所採取之技術手 段、元件及其功效’茲採一較佳實施例配合圖示說明如下。 〔實施方式〕 如圓1所示，本創作之鑽石研磨拋光輪主要包括： 一研磨盤10係概呈圓盤狀，其頂面具有一主轴u係可安 裝於一研磨機台（圓中未示）之驅動軸上，使該研磨盤10 5 M398464 玎受該研磨機台驅動產生高速旋轉。 請同時參考圖2所示’研磨盤的底面之外圍設置 有一個環狀的粗磨盤20，該粗磨盤20係由鑽石研磨顆粒 2 1混合黏著劑後所組成的一個環狀體，當其受到該研磨盤 1 0帶動旋轉時，係可對矽晶圓或晶棒等材料進行研磨。該 粗磨盤20係具有較高的切削效率，因此研削量大，且進 給快速’因此能夠快速地修整矽晶圓或晶棒的晶面尺寸及 平面度。 本創作主要特徵，在於該研磨盤丨〇底面於該粗磨盤 20的内惻，設置有一個圓盤狀的拋光盤3〇，該拋光盤3〇 密植有多數之拋光刷毛31，且各該拋光刷毛31的底端係 略微凸出於該粗磨盤20的底面。 該若干拋光刷毛31本身係為非當細小的柔軟性高分 子纖維材料’且在該拋光刷毛3丨的織維中，内含有粒度 相當微小的鑽石研磨微粒，因此使得該拋光刷毛3丨在高 速旋轉時接觸到晶圓或晶棒的晶面時，可以將晶面研磨拋 光，而使得晶面成為光滑的鏡面狀態，並且具有極佳的平 坦度。 如圖3及圓4所示’係為該研磨盤i 〇對一晶棒4〇 的晶面41進行研磨的動作方式。該研磨盤1〇係安裝於一 研磨機台（圖中未示）係高速旋轉，並同時以平行於 晶面41的方向與該晶棒4〇相對位移地朝向晶棒4〇前進。 由於研磨盤10底面的外圍設置有前述的粗磨盤2〇，因此 在研磨過程中’粗磨盤2〇會先接觸到晶棒4〇的晶面4 1 M398464 ,· * (如圓3所示），並且對晶面41產生研磨的動作。 而當研磨盤10持續與晶棒40相對位移，拋光盤30 開始接觸到晶面41之後，由於拋光盤30的拋光刷毛31 ' 係略微凸出於粗磨盤20的底面，因此拋光刷毛31可接觸 到被粗磨盤20研磨過後的晶面4卜而開始對晶面41進行 抛光。 前述粗磨盤2 0係由鑽石研磨顆粒製成，因此具有較 ' 佳切削效率’可對矽晶圓或晶棒進行粗研磨，以修正碎晶 圓或晶棒之晶面的平面度及尺寸：而在研磨盤内圈的拋光 盤30，則可進一步對經由粗磨盤20研磨後的晶面41進行 拋光，而使得晶面41進一步達到符合半導體製程所需的 表面光度。 另外必須注意，為避免粗磨盤20在研磨過程中，重 複接觸到已經抛光過的晶面41，而破壞晶面41的表面光 度，該研磨盤10在安裝時，係可以選擇性地以略微向前 • 傾斜一角度的方式安裝於研磨機台上，使其底面的粗磨盤 2 0之前端先行接觸到晶面4 1的一側的高度邊略低於後側 部分的高度，以使得粗磨盤20在通過晶棒40的晶面 時’粗磨盤2 0的後端部分不會接觸到晶面41，以避免晶 面41的表面光度被破壞。唯上述研磨輪1〇的安裝傾斜角 度不需太大，以避免造成晶面41的表面產生迴刀痕或者 是過度凹陷的情形。 本創作之鏆石研磨拋光輪轺由上述裝置組合，可將 粗研磨用的粗磨盤20與拋光用的拋光盤30結合為一體， 7 M398464 因此可以在同一次研磨行程中完成研磨及拋光的程序，而 不需要分為二道工序加工，因此可大幅地節省研磨加工的 工時與加工成本。 而且本創作之研磨拋光輪，被粗磨盤20研磨過後的 表面隨即被拋光盤30拋光，因此粗磨盤20研磨過的晶面 4 1的微小加工瑕疵立刻被拋光盤30修除，因此可以避免 研磨過後的晶面應力集中，而容易產生碎屑的問題產生， 進而提高製程的良率。 此外’本創作之研磨拋光輪同時具有粗研磨及拋光 的功能，因此能夠將研磨及拋光的研磨盤整合為一體，而 使得生產者不需要同時準備二種耗材，因此達到了簡化磨 輪耗材庫存管理的負擔的目的。 由於以上特點，本創作與習用技術相較下，確實已 符合新型專利之新穎性及進步性要件，惟以上說明書所揭 示僅為針對本創作較佳之可行實施例說明而已，惟該實施 例並非用以限定本創作之申請專利範圍，亦即其它未脫離 本創作所揭示之技藝精神下所完成之均等變化，均應包含 於本創作之申請專利範圍中》 〔圖式簡單說明〕 圖1係為本創作之研磨拋光輪之構造側面視圖。 圖2係為本創作之研磨拋光輪之立體搆造示意囵》 圖3係為本創作之研磨拋光輪對一晶棒進行粗研磨的動作 示意圖。 8 M398464 圖4係為本創作之研磨拋光輪對一晶棒進行拋光程序的動 作示意圓。 〔主要元件符號說明〕 10 研磨盤 11 主軸 20 粗磨盤 ' 21 鑽石研磨顆粒 參 30 拋光盤 31 抛光刷毛 40 晶棒 41 晶面M398464 . » * V. New description (new technical field) This is a diamond grinding and polishing wheel for the grinding and polishing of wafers or ingots, especially for solar energy. The pie stone grinding and holding wheel for the grinding and polishing of the wafer process, '[Prior Art] 'In the semiconductor manufacturing process, the silicon wafer or the ingot must be cut first and then the wafer surface of the wafer after cutting Subsequent processing, but because the crystal face of the crystal or the ingot after slicing does not have the flatness required by the semi-guided process*, it must be ground and polished before subsequent metal deposition, crystal growth, and circuit fabrication. Such processes, so grinding and polishing, are quite critical process technologies in semiconductor manufacturing. In general semiconductor manufacturing, the requirements for wafer flatness and surface luminosity are extremely high. 'The polishing process must be used to achieve the required level. · However, due to the relatively small amount of surface removal during polishing, the size and plane of the wafer surface. The error of the degree cannot be greatly improved. Therefore, the surface of the wafer material must be ground first by the honing wheel to meet the requirements of the size and flatness of the surface of the wafer, and then the polishing process is performed* to obtain a crystal surface with excellent surface luminosity. In order to meet the requirements of semiconductor manufacturing process, taking the solar 矽 substrate process as an example, the wafer or the ingot after the wafer surface is usually ground by a diamond wheel or a rough brush wheel: then a fine grinding wheel or fine hair is used. The polished crystal face is polished by other wheels. 3 M398464 However, in the conventional grinding and polishing process, the cutting characteristics of the rough grinding wheel and the fine polishing wheel are not the same. The cutting amount of the coarse grinding wheel is large, and the material can be quickly removed, so that the crystal surface can reach the requirements of flatness and inclination. However, the polished surface luminosity can not meet the requirements; while the fine grinding wheel or the fine brush wheel can remove very little material, and it does not have much benefit for the improvement of the coordination and flatness of the crystal face, but its ground surface It can achieve better surface luminosity. Therefore, in the conventional process technology, the grinding and polishing processes are separated. 'The grinding surface is first polished by the grinding wheel, and then the fine grinding wheel or fine brush wheel is used to polish the crystal surface. Therefore, it is necessary to polish the crystal surface. Processing in two different processes, so that the main disadvantages are as follows: 1 · It is necessary to use two processes to grind and polish separately, which causes the process to be time-consuming and labor-intensive. 2. Grinding with a coarse grinding wheel and then polishing with a fine grinding wheel will cause surface stress to remain and cause fragmentation. 3. The rough grinding wheel and the fine grinding wheel or the fine brush wheel are all consumables. Both grinding and polishing must be prepared separately for different grinding wheels or brush wheels, which causes inconvenience in materials and inventory management. Due to the above reasons, the grinding wheel for polishing and polishing of conventional crystals has been further improved. The creators are hereby succumbing to this. They are hard-working, slightly researched, and have been engaged in related product research for many years. Constantly experimenting and improving, I finally developed this creation. [New Content] The purpose of this creation* is to provide a diamond grinding and polishing wheel that can be used for grinding and polishing of twin crystal materials and M398464 can be simultaneously polished and polished in one grinding process. The main technical content of this creation is that the grinding wheel comprises a disc-shaped grinding disc, an annular coarse grinding disc is arranged on the outer surface of the grinding disc and a multi-teaching polishing brist is arranged on the inner side of the coarse grinding disc. The composition of the disc. The polishing bristles of the polishing disc are slightly protruded from the bottom surface of the rough grinding disc. Therefore, when the grinding disc is ground on the crystal surface of the crucible wafer or the ingot, the crystal surface may be ground first by a coarse grinding disc, and then Polishing disc & polishing the crystal surface This creation combines the grinding wheel of the outer ring and the polishing disk of the inner ring to combine the rough grinding disc and the fine brush wheel of the conventional wafer grinding into one device' and can be the same The process of polishing and glazing in the process of the road does not need to be divided into two processes, so that the man-hour and the processing cost of the grinding process can be greatly saved, and the burden of the inventory management of the grinding wheel consumables can be simplified. Moreover, it is possible to perform polishing immediately after the crystal face polishing is completed to avoid crystal face grinding. • After the surface is slightly processed, the stress is remnant, resulting in the problem that the crystal face material is broken and the yield is lowered. In order to achieve the above and other objects, the present invention has been described in terms of the technical means, components, and functions thereof. [Embodiment] As shown by the circle 1, the diamond grinding and polishing wheel of the present invention mainly comprises: a grinding disc 10 is generally disc-shaped, and the top mask has a spindle u system which can be mounted on a grinding machine (in the circle On the drive shaft of the display, the grinding disc 10 5 M398464 is driven by the grinding machine to produce high-speed rotation. Please also refer to the periphery of the bottom surface of the grinding disc shown in FIG. 2 to provide an annular coarse grinding disc 20 which is an annular body composed of diamond abrasive particles 21 mixed with an adhesive when subjected to an annular body. When the grinding disc 10 is rotated, the material such as a crucible wafer or an ingot can be polished. The rough grinding disc 20 has a high cutting efficiency, so that the grinding amount is large and the feed is fast', so that the crystal face size and flatness of the wafer or the ingot can be quickly trimmed. The main feature of the present invention is that the bottom surface of the grinding disc is disposed on the inner surface of the coarse grinding disc 20, and a disc-shaped polishing disc 3 is disposed. The polishing disc 3 is densely packed with a plurality of polishing bristles 31, and each of the polishing discs is polished. The bottom end of the bristles 31 is slightly protruded from the bottom surface of the rough grinding disc 20. The plurality of polishing bristles 31 are themselves made of a non-small, flexible polymer fiber material, and in the weaving dimension of the polishing bristles, diamond polishing particles having a relatively small particle size are contained therein, thereby causing the polishing bristles to be at a high speed. When it touches the crystal face of the wafer or the ingot during rotation, the crystal face can be ground and polished, so that the crystal face becomes a smooth mirror state and has excellent flatness. As shown in Fig. 3 and circle 4, the grinding disk i 〇 is used to polish the crystal face 41 of the ingot 4 。. The grinding disc 1 is mounted on a grinder table (not shown) for high-speed rotation, and simultaneously advances toward the ingot 4 〇 in a direction parallel to the crystal plane 41 with respect to the ingot 4 。. Since the rough grinding disc 2〇 is provided on the outer periphery of the bottom surface of the grinding disc 10, the rough grinding disc 2 will first contact the crystal surface of the ingot 4 M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M And the action of grinding the crystal face 41. When the grinding disc 10 continues to be displaced relative to the ingot 40, after the polishing disc 30 comes into contact with the crystal surface 41, since the polishing bristles 31' of the polishing disc 30 are slightly protruded from the bottom surface of the rough grinding disc 20, the polishing bristles 31 can be contacted. The crystal face 41 is polished to the crystal face 4 which has been ground by the rough grinding disk 20. The rough grinding disc 20 is made of diamond abrasive particles, so that the "good cutting efficiency" can be used to coarsely grind the silicon wafer or the ingot to correct the flatness and size of the crystal face of the broken wafer or the ingot: In the polishing disk 30 of the inner ring of the disk, the crystal face 41 polished by the rough grinding disk 20 can be further polished, so that the crystal face 41 further reaches the surface luminosity required for the semiconductor process. In addition, it must be noted that in order to prevent the rough grinding disc 20 from repeatedly contacting the already polished crystal surface 41 during the grinding process, and destroying the surface luminosity of the crystal surface 41, the grinding disc 10 can be selectively slightly oriented during installation. Front • Tilted at an angle to the grinder table so that the front end of the rough grinding disc 20 at the bottom of the bottom surface contacts the height of one side of the crystal face 4 1 slightly below the height of the rear side portion, so that the rough grinding disc 20 When passing through the crystal face of the ingot 40, the rear end portion of the rough grinding disk 20 does not contact the crystal face 41 to prevent the surface luminosity of the crystal face 41 from being broken. It is only necessary that the mounting angle of the above-mentioned grinding wheel 1〇 is not too large to avoid a situation in which the surface of the crystal face 41 is returned to the blade or excessively recessed. The meteorite grinding and polishing rim of the present invention is combined by the above device, and the coarse grinding disc 20 for rough grinding and the polishing disc 30 for polishing can be integrated into one body, 7 M398464 can thus complete the grinding and polishing process in the same grinding stroke. It does not need to be divided into two processes, so the labor and processing costs of the grinding process can be greatly saved. Moreover, the surface of the grinding and polishing wheel of the present invention, which has been ground by the rough grinding disc 20, is then polished by the polishing disc 30, so that the minute processing of the crystal surface 41 which has been ground by the rough grinding disc 20 is immediately removed by the polishing disc 30, so that the grinding can be avoided. After the crystal plane stress is concentrated, the problem of chipping is likely to occur, thereby improving the yield of the process. In addition, the grinding and polishing wheel of this creation has the functions of coarse grinding and polishing, so that the grinding and polishing grinding disc can be integrated into one body, so that the producer does not need to prepare two kinds of consumables at the same time, thus simplifying the inventory management of the grinding wheel consumables. The purpose of the burden. Due to the above characteristics, this creation and the conventional technology have indeed met the novelty and progressive requirements of the new patent, but the above description is only for the description of the preferred embodiment of the present invention, but the embodiment is not used. To the extent that the scope of the patent application is limited to the scope of the invention, that is, the equivalent changes that have been made without departing from the spirit of the art disclosed in the present invention shall be included in the scope of the patent application of this creation. [Simplified illustration] Figure 1 is A side view of the construction of the grinding and polishing wheel of the present invention. Fig. 2 is a schematic view showing the three-dimensional structure of the grinding and polishing wheel of the present invention. Fig. 3 is a schematic view showing the action of rough grinding of an ingot by the grinding and polishing wheel of the present invention. 8 M398464 Figure 4 is a schematic diagram of the movement of the polishing wheel of this creation to the polishing process of an ingot. [Main component symbol description] 10 Grinding disc 11 Spindle 20 Rough grinding disc ' 21 Diamond grinding granules Ref. 30 Polishing disc 31 Polishing bristles 40 Ingots 41 Crystal faces