CN113875011A - 驱动基板及其制作方法、显示装置 - Google Patents
驱动基板及其制作方法、显示装置 Download PDFInfo
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- CN113875011A CN113875011A CN202080000512.1A CN202080000512A CN113875011A CN 113875011 A CN113875011 A CN 113875011A CN 202080000512 A CN202080000512 A CN 202080000512A CN 113875011 A CN113875011 A CN 113875011A
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
一种驱动基板及其制作方法、显示装置,属于显示技术领域。驱动基板包括:衬底基板(1);位于衬底基板(1)上的应力缓冲层(2);位于应力缓冲层(2)远离衬底基板(1)一侧的多个第一走线(3);位于第一走线(3)远离衬底基板(1)一侧的第一绝缘层(6);位于第一绝缘层(6)远离衬底基板(1)一侧的多个第二走线结构(4),每一第一走线(3)通过贯穿第二绝缘层(12)的第一过孔与至少一个第二走线结构(4)连接;位于第二走线结构(4)远离衬底基板(1)一侧的第二绝缘层(12);位于第二绝缘层(12)远离衬底基板(1)一侧的电子元件(7),电子元件(7)通过贯穿第二绝缘层(12)的第二过孔与第二走线结构(4)连接。能够减少制作驱动基板的构图工艺的次数。
Description
PCT国内申请,说明书已公开。
Claims (17)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2020/084206 WO2021203415A1 (zh) | 2020-04-10 | 2020-04-10 | 驱动基板及其制作方法、显示装置 |
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CN113875011A true CN113875011A (zh) | 2021-12-31 |
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Application Number | Title | Priority Date | Filing Date |
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CN202080000512.1A Pending CN113875011A (zh) | 2020-04-10 | 2020-04-10 | 驱动基板及其制作方法、显示装置 |
Country Status (5)
Country | Link |
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US (1) | US20210359182A1 (zh) |
EP (1) | EP4135039A4 (zh) |
KR (1) | KR20220165719A (zh) |
CN (1) | CN113875011A (zh) |
WO (1) | WO2021203415A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023184298A1 (zh) * | 2022-03-31 | 2023-10-05 | 京东方科技集团股份有限公司 | 压电传感器、其驱动方法及触觉反馈装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111524859B (zh) * | 2020-04-23 | 2022-04-26 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制造方法、显示装置 |
WO2021226868A1 (zh) * | 2020-05-13 | 2021-11-18 | 京东方科技集团股份有限公司 | 驱动基板及其制作方法、显示装置 |
CN113973431B (zh) * | 2020-07-23 | 2023-08-18 | 宏启胜精密电子(秦皇岛)有限公司 | 电路板及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102005351B1 (ko) * | 2017-12-07 | 2019-07-31 | 삼성전자주식회사 | 팬-아웃 센서 패키지 |
US10984702B2 (en) * | 2018-06-22 | 2021-04-20 | Epistar Corporation | Display apparatus with array of light emitting diodes and method of manufacturing the same |
CN109031779A (zh) * | 2018-07-25 | 2018-12-18 | 京东方科技集团股份有限公司 | 发光二极管基板、背光模组和显示装置 |
JP7256622B2 (ja) * | 2018-09-26 | 2023-04-12 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109541865A (zh) * | 2018-12-26 | 2019-03-29 | 厦门天马微电子有限公司 | 阵列基板、显示面板和显示装置 |
CN109597245B (zh) * | 2019-01-02 | 2023-12-12 | 京东方科技集团股份有限公司 | 背光模组及其制备方法、显示装置 |
US20220181522A1 (en) * | 2019-04-16 | 2022-06-09 | Samsung Display Co., Ltd. | Display device and method for manufacturing same |
CN110972495A (zh) * | 2019-05-10 | 2020-04-07 | 京东方科技集团股份有限公司 | 发光驱动基板及其制作方法、发光基板和显示装置 |
CN110610975B (zh) * | 2019-09-23 | 2022-04-08 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
CN110544704B (zh) * | 2019-09-25 | 2022-04-08 | 京东方科技集团股份有限公司 | 驱动基板及制作方法、微led绑定方法 |
CN114725081A (zh) * | 2019-09-30 | 2022-07-08 | 京东方科技集团股份有限公司 | 背光源的显示方法及装置 |
CN110690244B (zh) * | 2019-10-15 | 2021-11-05 | 京东方科技集团股份有限公司 | 一种背板、显示面板以及微发光二极管的转移方法 |
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2020
- 2020-04-10 US US17/260,778 patent/US20210359182A1/en active Pending
- 2020-04-10 EP EP20897613.4A patent/EP4135039A4/en active Pending
- 2020-04-10 KR KR1020227013891A patent/KR20220165719A/ko active Search and Examination
- 2020-04-10 WO PCT/CN2020/084206 patent/WO2021203415A1/zh unknown
- 2020-04-10 CN CN202080000512.1A patent/CN113875011A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023184298A1 (zh) * | 2022-03-31 | 2023-10-05 | 京东方科技集团股份有限公司 | 压电传感器、其驱动方法及触觉反馈装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20220165719A (ko) | 2022-12-15 |
US20210359182A1 (en) | 2021-11-18 |
JP2023529031A (ja) | 2023-07-07 |
EP4135039A4 (en) | 2023-05-10 |
EP4135039A1 (en) | 2023-02-15 |
WO2021203415A1 (zh) | 2021-10-14 |
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