CN113871519A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN113871519A CN113871519A CN202111165751.5A CN202111165751A CN113871519A CN 113871519 A CN113871519 A CN 113871519A CN 202111165751 A CN202111165751 A CN 202111165751A CN 113871519 A CN113871519 A CN 113871519A
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000003475 lamination Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 14
- 230000000873 masking effect Effects 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 106
- 230000000694 effects Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005282 brightening Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
The invention belongs to the field of semiconductors, and particularly relates to a light emitting diode which comprises a substrate and a semiconductor lamination, wherein the semiconductor lamination comprises a first semiconductor layer, a second semiconductor layer, an active layer clamped between the first semiconductor layer and the second semiconductor layer, a first electrode and a second electrode which are respectively electrically connected with the first semiconductor layer and the second semiconductor layer, and at least the first electrode comprises a pad part and an extension part. The invention can increase the whole reflection area of the LED, avoid the problem that the extension part shields the light, and improve the light extraction efficiency of the LED.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a light-emitting diode and a manufacturing method thereof.
Background
Because of the characteristics of energy saving, environmental protection, safety, durability, high photoelectric conversion rate, strong controllability and the like, Light-Emitting diodes (LEDs) are widely applied to the related fields of displays, automobile illumination, general illumination backlight sources and the like.
The light extraction efficiency is an important index for judging the quality of the light-emitting diode. In the prior art, a forward scribing process is usually adopted and matched with a high-temperature side wall corrosion process, and a certain angle is corroded on the side wall of an epitaxial layer of a light-emitting diode, so that light emitted from the original side face is reflected to the front face, and the light emitting efficiency is improved. However, the sidewall erosion profile and the light emitting region are blocked by the first electrode, and the light from the side surface cannot be reflected to the front surface, so that the brightening process is not effective.
Therefore, how to improve the light extraction efficiency of the light emitting diode is an urgent problem to be solved.
Description of the invention
In order to solve the technical problems, the specific technical scheme is as follows:
according to a first aspect of the present invention, there is provided a light emitting diode, comprising a substrate and a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, a second semiconductor layer, an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, and a first electrode and a second electrode electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, at least the first electrode comprises a pad portion and an extension portion, wherein support structures are disposed at intervals below the extension portion, a first groove is disposed between adjacent support structures, and a bottom of the first groove is exposed out of the substrate
Preferably, an included angle a is formed between an inner wall facing the active layer in the first groove and the substrate to form a reflecting surface.
Preferably, the side wall of the semiconductor lamination layer is an inclined side wall, and forms an included angle a with the substrate to form a reflecting surface.
Preferably, the included angle a is greater than 0 degree and less than 90 degrees.
Preferably, the extension part extends along the top surface, the side wall and the upper surface of the substrate.
Preferably, the extension portion is disposed on the support structure and suspended above the substrate.
Preferably, the side surface of the support structure along the extending direction of the first electrode is an inclined side surface, and forms an included angle B with the substrate.
Preferably, the included angle B is greater than 90 degrees and less than 180 degrees.
Preferably, the support structure has a length of at least 3 μm.
Preferably, the length of the support structure is gradually reduced or gradually increased from the pad portion to the end of the extension portion or is the same.
Preferably, the length of the first groove is gradually reduced or gradually increased from the pad portion to the end of the extension portion or is the same. Preferably, the first and second liquid crystal materials are,
and a second groove is arranged in the first semiconductor layer region between the pad part of the first electrode and the active layer.
Preferably, the bottom of the second groove exposes the substrate.
Preferably, the second groove is arc-shaped or block-shaped and is continuously or discretely arranged.
Preferably, the distance between the reflecting surface and the active layer is 0-25 μm.
The second aspect of the present invention provides a method for manufacturing the light emitting diode, which at least includes the following steps:
s1, providing a substrate;
s2: growing a semiconductor lamination layer on the substrate, wherein the semiconductor lamination layer comprises a first semiconductor layer, a second semiconductor layer and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer;
s3: manufacturing a first electrode and a second electrode, wherein the first electrode is electrically connected with the first semiconductor layer, the second electrode is electrically connected with the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part;
the substrate-free LED lamp is characterized in that supporting structures arranged at intervals are arranged below the extending part, a first groove is arranged between every two adjacent supporting structures, and the bottom of the first groove is exposed out of the substrate.
Preferably, the first groove is formed by masking and etching, and has an inclined inner wall.
Preferably, the first semiconductor layer between the pad part and the active layer is removed by means of masking and etching while the first recess is formed, to form a second recess having an inclined inner wall.
Preferably, the semiconductor stack having the inclined surface is formed by means of a mask and etching.
According to the invention, the inclined reflecting surfaces are manufactured between the first electrode and the active layer and on the side surface of the semiconductor lamination layer, so that the whole reflecting area of the light-emitting diode is increased, the problem that the first electrode shields light can be effectively avoided, and the light extraction efficiency of the light-emitting diode is improved.
Drawings
Fig. 1 is a schematic top view of a light emitting diode provided in the prior art;
fig. 2 is a schematic top view of a first light emitting diode according to an embodiment of the invention;
FIG. 3 is a schematic cross-sectional view taken along line H-H' of one of the FIG. 2 embodiments provided by the present invention;
FIG. 4 is an enlarged view of the invention provided at G of FIG. 2;
fig. 5 is a schematic top view of a second light emitting diode according to an embodiment of the invention;
FIG. 6 is a schematic top view of a third LED according to an embodiment of the present invention;
FIG. 7 is a schematic top view of a fourth LED according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view taken along line H-H' of FIG. 2 according to another embodiment of the present invention;
fig. 9 is a schematic top view of a fifth light emitting diode according to an embodiment of the invention;
fig. 10 is a schematic top view of a sixth light emitting diode according to an embodiment of the present invention.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The following embodiments will explain the concept of the present invention along with the accompanying drawings, in which like or similar parts are designated by the same reference numerals, and in which the shape or thickness of elements may be enlarged or reduced. It is to be noted that elements not shown in the drawings or described in the specification may be in a form known to those skilled in the art.
In the following embodiments, terms used to indicate directions, such as "upper", "lower", "front", "rear", "left", and "right", refer to directions only in the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
Fig. 1 is a schematic top view of a light emitting diode provided in the prior art;
referring to fig. 1, a light emitting diode of the prior art includes a substrate, a semiconductor stack, and an electrode. The semiconductor stack includes a first semiconductor layer 1, a second semiconductor layer 3, and an active layer 2 interposed between the first semiconductor layer 1 and the second semiconductor layer 3. The electrodes include a first electrode 4 and a second electrode 5 electrically connected to the first semiconductor layer 1 and the second semiconductor layer 3, respectively.
In order to improve the light extraction efficiency of the light emitting diode, the prior art adopts a forward scribing process to scribe the semiconductor lamination, and then forms the semiconductor lamination with the side wall having an inclination angle through a high-temperature side wall etching process, so that the light emitted from the original side surface is reflected to the front surface, and the light emitting efficiency is improved. However, the inclined sidewall 6 of the semiconductor stack formed by the sidewall etching process is far from the active layer 2, and specifically, the inclined sidewall 6 is generally formed at the outer periphery of the semiconductor stack. Since the inclined sidewall 6 is formed at the periphery of the semiconductor stacked layer, the first electrode 4 exists between the inclined sidewall 6 and the active layer, and the first electrode 4 can block and absorb the lateral light emitted from the active layer 2, so that the inclined sidewall 6 cannot reflect the original lateral light into the forward light, the brightening process is ineffective, and the light-emitting efficiency of the light-emitting diode is further affected.
Therefore, the present invention is directed to the above-mentioned problems and provides a light emitting diode with improved light extraction efficiency.
Example 1
Referring to fig. 2 and 3, a light emitting diode according to an embodiment of the present invention includes a substrate 10 and a semiconductor stack including a first semiconductor layer 20, a second semiconductor layer 40, an active layer 30 interposed between the first semiconductor layer 20 and the second semiconductor layer 40, and a first electrode 21 and a second electrode 41 electrically connected to the first semiconductor layer 20 and the second semiconductor layer 40, respectively.
Specifically, the substrate 10 of the present embodiment is made of Al2O3Any one or combination of more of SiC, GaAs, GaN, AlN, GaP, Si, ZnO and MnO. In this embodiment, a sapphire substrate is preferred, and the sapphire substrate may also be a Patterned Sapphire Substrate (PSS) to change a propagation path of light and improve the light extraction efficiency of the light emitting diode.
The first semiconductor layer 20 and the second semiconductor layer 40 may be formed by stacking a plurality of III-V group compound semiconductor layers, may have a single-layer structure or a multi-layer structure, and may have p-type doping or n-type doping, the p-type doping impurity type may be Mg, Zn, Ca, Sr, or Ba, the n-type doping impurity type may be Si, Ge, or Sn, and other doping equivalent to the element is not excluded in the present invention. When the first semiconductor layer 20 is doped n-type, the second semiconductor layer 40 is doped p-type; conversely, when the first semiconductor layer 20 is p-type doped, the second semiconductor layer 40 is n-type doped.
The active layer 30 is interposed between the first semiconductor layer 20 and the second semiconductor layer 40. Electrons or holes provided from the first semiconductor layer 20 are recombined with holes or electrons provided from the second semiconductor layer 40 in the active layer 30, and the active layer 30 emits light when driven by a voltage. The color of the light depends on the material of the compound semiconductor layer of the active layer 30, the specific radiation band is 390-950 nm, such as blue, green, red, yellow, orange, infrared, and the active layer 30 may be a single quantum well or a multiple quantum well structure.
And etching a part of the second semiconductor layer 40 to the first semiconductor layer 20 to expose the surface of the first semiconductor layer 20, manufacturing a first electrode 21 on the exposed surface of the first semiconductor layer 20, and manufacturing a second electrode 41 on the second semiconductor layer 20, wherein the first electrode 21 and the second electrode 41 are respectively arranged towards two sides of the semiconductor lamination. In the present embodiment, in order to increase the current uniformity of the semiconductor stack, the lengths of the first electrode 21 and the second electrode 41 are increased accordingly. Specifically, the first electrode 21 includes a pad portion 211 and an extension portion 212, one end of the extension portion 212 is connected to the pad portion 211, and the other end extends from the pad portion 211 to the second electrode 41, so that the current of the pad portion 211 is expanded along the extension portion 212. Similarly, the second electrode 41 includes a pad portion and an extension portion, and the extension portion extends from the pad portion toward the first electrode 21. By increasing the areas of the first electrode 21 and the second electrode 41 in the above manner, the current uniformity of the semiconductor layer is improved. Accordingly, in order to fabricate the extension portion 212 of the first electrode 21, a part of the semiconductor stack is sacrificed, and the area of the active layer 30 is reduced, but compared to the conventional led without the electrode structure of the extension portion 212, the present embodiment still has the effect of improving the luminance.
With continued reference to fig. 3, the present embodiment has spaced apart support structures 22 under the extension 212 of the first electrode 21, a first groove 23 is disposed between adjacent support structures 22, and the bottom of the first groove 23 exposes the substrate 10. The support structure 22 is actually a part of the first semiconductor layer 20 to ensure that the current flowing from the extension portion 212 can be spread to the whole first semiconductor layer 20 through the support structure 22.
Specifically, the first groove 23 of the present embodiment has four inner walls, wherein the inner wall facing and close to the active layer 30 is made to be inclined and forms an included angle a with the substrate 10, and the degree of the angle a is greater than 0 degree and less than 90 degrees, so as to form a reflective surface 50 for playing a role of reflecting the side light, see fig. 4 specifically; the inner wall facing and away from the active layer 30 may be made to be inclined, or may not be made to be inclined; the remaining opposing two interior walls are essentially the sides of the support structure 22.
Further, with continued reference to fig. 3, the extension 212 of the first electrode 21 may extend along the top surface, the side surface, and the upper surface of the substrate 10 of the supporting structure 22, i.e., the extension 212 may bridge planes of different heights. The side of the support structure 22 is the side of the support structure 22 along the direction of the extension 212 of the first electrode 21. Specifically, in the area where the supporting structure 22 is located, the extension portion 212 is disposed on the top surface of the supporting structure 22 and located in the area where the first groove 23 belongs, the extension portion 212 is disposed against the upper surface of the substrate 10, and the remaining portion of the extension portion 212 is disposed along the side surface of the supporting structure 22 to form the complete extension portion 212. Through the above structure, it can be ensured that current is conducted on the premise that a part of the extension portion 212 is located on the surface of the substrate 10, and the whole inner wall of the first groove 23 is located above the extension portion 212, therefore, the reflection surface 50 is also located above the extension portion 212, and compared with the extension portion 212, the reflection surface 50 is closer to the active layer 30, when lateral light does not reach the first electrode extension portion 212, the lateral light can be directly reflected to the front surface through the reflection surface 50 in one step, and shielding and absorption of the extension portion 212 of the first electrode 21 to the lateral light are avoided, so that light extraction efficiency is improved, and an effect of improving brightness is achieved. In other embodiments, the first groove 23 may have three-sided inner walls. Specifically, the portion of the first semiconductor layer 20 outside the inner wall facing and away from the active layer 30 is entirely removed to form a semiconductor device having only three inner walls, see fig. 5 for details.
Further, with continued reference to fig. 3, the side of the support structure 22 along the extension 212 of the first electrode 21 is an inclined side and forms an angle B with the substrate 10, preferably the angle range of the angle B is greater than 90 degrees and less than 180 degrees. An included angle between the side surface of the supporting structure 22 and the substrate 10 forms an obtuse angle, which can effectively prevent the first electrode 21 extension portion 212 from extending along the top surface and the side surface of the supporting structure 22 and the upper surface of the substrate 10, so as to avoid the occurrence of wire breaking, thereby ensuring the integrity and reliability of the extension portion 212. The degree of inclination of the side surfaces of the support structure 22 can be adjusted by controlling the inclination of the inner wall of the first groove 23.
The length and number of the first grooves 23 and the support structures 22 can be adjusted to the actual situation. Specifically, the longer the length of the first grooves 23, the larger the area of the reflecting surface 50, and the more light rays reflect the side light to the front, and similarly, the larger the number of the first grooves 23, the larger the reflecting area. However, based on the process capability limitation, the length of the support structure 22 is at least 3 μm, and the shorter the length of the support structure 22, the longer the length of the corresponding first groove 23, and the larger the area of the reflective surface 50, and similarly, the smaller the number of the support structures 22, the longer the length of the corresponding first groove 23, and the larger the area of the reflective surface 50. Further, the length of the first groove 23 or the support structure 22 of this embodiment may be the same, so as to facilitate uniform reflection of the side light into the forward light, and avoid the local brightness from being darker to form a more obvious contrast. Further, the length of the first groove 23 is gradually decreased or gradually increased from the pad portion 211 to the end of the extension portion 212; the length of the support structure 22 gradually decreases or gradually increases from the pad portion 211 to the end of the extension portion 212, and the embodiment is not particularly limited. In addition, the width of the supporting structure 22 is at least as wide as the width of the extension 212 of the first electrode 21 to ensure a better current spreading effect.
The sidewalls of the semiconductor stack are sloped sidewalls, and form an acute angle a with the substrate 10, where the degree of the acute angle a is greater than 0 degrees and less than 90 degrees, so as to form the reflective surface 50. Further, the present embodiment shortens the distance from the inclined reflective surface 50 of the semiconductor stacked layer to the active layer 30 in the prior art, and specifically, the distance from the inclined reflective surface 50 of the semiconductor stacked layer to the active layer 30 is preferably 0 to 25 μm, so as to achieve a better reflective effect. The distance from the reflective surface 50 of the first groove 23 to the active layer 30 can also be set to 0-25 μm, see fig. 6 and 7 in particular.
Example 2
Referring to fig. 8, the present embodiment is different from embodiment 1 in that the extension portion 212 of the first electrode 21 may be disposed on the supporting structure 22 and suspended above the substrate 10. Because there is a height difference between the supporting structure 22 and the bottom of the first groove 23, in the process of manufacturing the extending portion 212 of the first electrode 21, the extending portion 212 is not tightly attached to the bottom of the first groove 23, but it can directly reflect the lateral light to the front surface through the reflecting surface 50 in one step when the lateral light does not reach the extending portion 212 of the first electrode 21, so as to avoid shielding and absorbing the lateral light, improve the light extraction efficiency, and achieve the effect of improving the brightness. In addition, by shortening the distance between the supporting structures 22, i.e. reducing the length of the first recess 23, the structure in which the extension portion 212 of the first electrode 21 is disposed on the supporting structure 22 and suspended above the substrate 10 can be realized. In order to relatively increase the area of the reflection surface 50 as much as possible, the reflection effect is improved by increasing the number of the support structures 22 and reducing the length of the support structures 22, thereby forming a greater number of first grooves 23 to achieve the brightening effect.
Example 3
Referring to fig. 9 and 10, the present embodiment is different from embodiments 1 and 2 in that a second groove 60 is formed in a region of the first semiconductor layer 20 between the pad portion 212 of the first electrode 21 and the active layer 30. The bottom of the second groove 60 is exposed out of the substrate 10, and is obliquely arranged towards the inner wall of the active layer 30, the specific structure of the second groove is the same as that of the first groove 23, the area of the reflecting surface 50 is further increased, side light emitting reflection to front light emitting is facilitated, and the light extraction rate is further improved. Further, the second groove 60 is arc-shaped or block-shaped and is continuously or discretely arranged, that is, continuously arc-shaped or continuously block-shaped or discretely arc-shaped or discretely block-shaped, and the continuous arc-shaped arrangement is preferred in this embodiment.
Example 4
The embodiment provides a method for manufacturing a light emitting diode, which at least comprises the following steps:
s1, providing a substrate 10; wherein, the substrate 10 is a graphical sapphire substrate;
s2, growing a semiconductor stack on the substrate 10, the semiconductor stack including a first semiconductor layer 20, a second semiconductor layer 40, and an active layer 30 interposed between the first semiconductor layer 20 and the second semiconductor layer 40;
the method of forming the first semiconductor layer 20 and the second semiconductor layer 40 is not particularly limited, and for example, Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), halide vapor phase epitaxy (HPVE), sputtering, ion plating, electron spray, and the like. The metal oxide semiconductor is prepared by a conventional MOCVD method.
S3, fabricating a first electrode 21 and a second electrode 41, wherein the first electrode 21 is electrically connected to the first semiconductor layer 20, the second electrode 41 is electrically connected to the second semiconductor layer 40, and the first electrode 21 includes a pad portion 211 and an extension portion 212;
specifically, a portion of the second semiconductor layer 20 is etched to the first semiconductor layer 10 to form a step, and then the first electrode 21 and the second electrode 41 are formed on the surface of the step and the surface of the second semiconductor layer 20, respectively. The etching method can be dry etching, wet etching or a combination of the two.
Before the extension 212 of the first electrode 21 grows, first grooves 23 are formed under the extension 212 to form the supporting structure 22, and the bottom of the first groove 23 is exposed out of the substrate 10. The first groove 23 is formed by masking and etching, and has an inclined inner wall. For example, the first groove 23 is formed by a masking process and dry etching, and the sidewall of the first groove 23 is etched by the sidewall to form an inclined surface. Wherein the first grooves 23 may be etched to form the inclined inner walls by etching with an acid solution, which may be a diluted mixture of sulfuric acid and hydrofluoric acid, H2PO3Solution of H2SO4Solution of H2PO3And H2SO4The temperature of the corrosion solution is between 25 and 350 ℃, and a better corrosion effect can be achieved.
While the first groove 23 is formed, the first semiconductor layer 20 between the pad part 211 and the active layer 30 may be removed by means of masking and etching to form the second groove 60 having an inclined inner wall. For example, the second groove 60 is formed by removing the first semiconductor layer 20 between the pad portion 211 and the active layer 30 through a photo-masking process and a dry etching manner, and the sidewall of the first groove 23 is etched by the sidewall to form an inclined surface. The side wall of the semiconductor lamination layer forms a reflecting surface 50 surrounding the active layer 30 by means of masking and etching, and the distance from the reflecting surface 50 to the active layer 30 is reduced, preferably 0-25 μm, so that the reflecting distance is better. Specifically, the semiconductor stack may be etched by a forward scribing or masking process and a dry etching process to remove a portion of the first semiconductor layer 20, and simultaneously etch the sidewalls of the semiconductor stack in cooperation with the sidewalls to form the reflective surface 50.
The invention increases the whole reflection area of the light-emitting diode by manufacturing the inclined reflection surface 50 between the first electrode 21 and the active layer 30 and the side surface of the semiconductor lamination, can effectively avoid the problem that the extension part 212 shields the light, improves the light extraction efficiency of the light-emitting diode, and realizes better reflection effect by reducing the distance from the reflection surface 50 of the semiconductor lamination to the active layer 30.
It should be understood that the above-mentioned embodiments are preferred examples of the present invention, and the scope of the present invention is not limited to these examples, and any modification made according to the present invention is within the scope of the present invention.
Claims (19)
1. The light-emitting diode comprises a substrate and a semiconductor lamination, wherein the semiconductor lamination comprises a first semiconductor layer, a second semiconductor layer, an active layer and a first electrode and a second electrode, the active layer is clamped between the first semiconductor layer and the second semiconductor layer, the first electrode and the second electrode are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer, at least the first electrode comprises a pad part and an extension part, the light-emitting diode is characterized in that support structures are arranged at intervals below the extension part, a first groove is arranged between the adjacent support structures, and the bottom of the first groove is exposed out of the substrate.
2. The light-emitting diode of claim 1, wherein an inner wall of the first groove facing the active layer forms an included angle a with the substrate to form a reflecting surface.
3. The light-emitting diode of claim 1, wherein the sidewalls of the stack of semiconductor layers are sloped and form an angle a with the substrate to form a reflective surface.
4. A light emitting diode according to claim 2 or 3 wherein said included angle a is greater than 0 degrees and less than 90 degrees.
5. The led of claim 1, wherein the extension extends along the top surface, the sidewall, and the upper surface of the substrate.
6. The light-emitting diode of claim 1, wherein the extension portion is disposed on the support structure and suspended above the substrate.
7. The light-emitting diode of claim 1, wherein the side surface of the support structure along the extension direction of the first electrode is an inclined side surface and forms an included angle B with the substrate.
8. The light-emitting diode of claim 7, wherein the included angle B is greater than 90 degrees and less than 180 degrees.
9. The led of claim 1, wherein said support structure has a length of at least 3 μm.
10. The light-emitting diode according to claim 1, wherein the length of the support structure is gradually decreased or gradually increased from the pad portion to the end of the extension portion or is the same.
11. The light-emitting diode according to claim 1, wherein the length of the first groove is gradually decreased or gradually increased from the pad portion to the end of the extension portion or is the same.
12. The light-emitting diode of claim 1, wherein a region of the first semiconductor layer between the pad portion of the first electrode and the active layer is provided with a second recess.
13. The led of claim 12, wherein the bottom of said second recess exposes the substrate.
14. The light-emitting diode according to claim 12, wherein the second grooves are arc-shaped or block-shaped and are arranged continuously or discretely.
15. The light-emitting diode according to claim 2 or 3, wherein the distance from the reflective surface to the active layer is 0 to 25 μm.
16. A manufacturing method of a light emitting diode at least comprises the following steps:
s1, providing a substrate;
s2: growing a semiconductor lamination layer on the substrate, wherein the semiconductor lamination layer comprises a first semiconductor layer, a second semiconductor layer and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer;
s3: manufacturing a first electrode and a second electrode, wherein the first electrode is electrically connected with the first semiconductor layer, the second electrode is electrically connected with the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part;
the substrate-free LED lamp is characterized in that supporting structures arranged at intervals are arranged below the extending part, a first groove is arranged between every two adjacent supporting structures, and the bottom of the first groove is exposed out of the substrate.
17. The method as claimed in claim 16, wherein the first recess is formed by masking and etching, and has an inclined inner wall.
18. The method of claim 16, wherein the first recess is formed while removing the first semiconductor layer between the pad portion and the active layer by masking and etching to form a second recess having an inclined inner wall.
19. The method as claimed in claim 16, wherein the semiconductor stack having the inclined surface is formed by masking and etching.
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