CN109786533A - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN109786533A CN109786533A CN201811567405.8A CN201811567405A CN109786533A CN 109786533 A CN109786533 A CN 109786533A CN 201811567405 A CN201811567405 A CN 201811567405A CN 109786533 A CN109786533 A CN 109786533A
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Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.Chip includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, N-type electrode, P-type electrode and insulating layer；P-type electrode includes pad portion, trunk finger and multiple branch's fingers, the pad portion of P-type electrode and multiple branch's fingers are arranged on p type semiconductor layer, insulating layer and trunk finger stack gradually on n type semiconductor layer in the groove, one end of trunk finger is connect with the pad portion of the P-type electrode, the other end of trunk finger extends to the direction of the pad portion far from P-type electrode, one end of each branch's finger is connect with trunk finger respectively, and the other end of each branch's finger extends to the direction far from trunk finger.The present invention can reduce the area for the finger part being arranged on p type semiconductor layer, reduces the light that P-type electrode is blocked and absorbed, promotes the light emission luminance of LED chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.Chip is the core component of LED.
Existing LED chip includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, P-type electrode and N-type electricity
Pole, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate, and p type semiconductor layer is equipped with and extends to N-type
The groove of semiconductor layer, N-type electrode are arranged on the n type semiconductor layer in groove, and P-type electrode is arranged on p type semiconductor layer.
N-type electrode and P-type electrode include pad portion and finger part.The injection of pad portion realization electric current.Finger
Partial one end is connect with pad portion, and the other end of finger part extends to the direction far from pad portion, so that electric current is equal
Even injection n type semiconductor layer or p type semiconductor layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of P-type electrode can block and absorb the light of active layer sending, and the finger part of P-type electrode is in order to realize
Electric current is uniformly injected into, and can be distributed on entire p type semiconductor layer, and the light for blocking and absorbing is more, goes out light to LED chip
It is affected, the light emission luminance of LED chip is caused to reduce.
Summary of the invention
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit and preparation method thereof, are able to solve prior art p-type
The problem of light that the finger part of electrode is blocked and absorbed is more, and LED chip light emission luminance is caused to reduce.The technical solution
It is as follows:
On the one hand, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes lining
Bottom, n type semiconductor layer, active layer, p type semiconductor layer, N-type electrode, P-type electrode and insulating layer；The n type semiconductor layer, institute
It states active layer and the p type semiconductor layer stacks gradually over the substrate, the p type semiconductor layer is described equipped with extending to
The groove of n type semiconductor layer；On the n type semiconductor layer of the N-type electrode setting in the groove, the N-type electrode includes
Pad portion and finger part, one end of the finger part are connect with the pad portion of the N-type electrode, the finger part
The other end to far from the N-type electrode pad portion direction extend；The P-type electrode includes pad portion, trunk hand
Finger and multiple branch's fingers, the pad portion of the P-type electrode and the multiple branch's finger are arranged at the P-type semiconductor
On layer, the insulating layer and the trunk finger are stacked gradually on n type semiconductor layer in the groove, the trunk finger
One end connect with the pad portion of the P-type electrode, the other end of the trunk finger is to the pad far from the P-type electrode
Partial direction extends, and one end of each branch's finger is connect with the trunk finger respectively, each branch's finger
The other end to far from the trunk finger direction extend.
Optionally, the trunk finger is parallel with the finger part.
Preferably, the distance between the trunk finger and the finger part are 1 μm~20 μm.
It is highly preferred that the distance between edge of the finger part and the light-emitting diode chip for backlight unit is 1 μm~50 μm.
Optionally, the multiple branch's finger is arranged at intervals on the same side of the trunk finger.
Preferably, the multiple branch's finger is parallel to each other.
Further, the distance between two neighboring described branch's finger is definite value.
Preferably, the definite value is 20 μm~200 μm.
Optionally, the master between each branch's finger and branch's finger and the pad portion of the P-type electrode
Angle between dry finger is obtuse angle.
On the other hand, the embodiment of the invention provides a kind of production method of light-emitting diode chip for backlight unit, the production methods
Include:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on substrate；
The groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Insulating layer is formed on n type semiconductor layer in the groove；
N-type electrode is set on n type semiconductor layer in the groove, in the p type semiconductor layer and the insulating layer
Upper setting P-type electrode；The N-type electrode includes pad portion and finger part, and one end of the finger part and the N-type are electric
The pad portion of pole connects, and the other end of the finger part extends to the direction of the pad portion far from the N-type electrode；Institute
Stating P-type electrode includes pad portion, trunk finger and multiple branch's fingers, the pad portion of the P-type electrode and the multiple
Branch's finger is arranged on the p type semiconductor layer, and the trunk finger is arranged on the insulating layer, the trunk finger
One end connect with the pad portion of the P-type electrode, the other end of the trunk finger is to the pad far from the P-type electrode
Partial direction extends, and one end of each branch's finger is connect with the trunk finger respectively, each branch's finger
The other end to far from the trunk finger direction extend.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that the finger part of P-type electrode is divided into trunk finger and multiple branch's fingers, trunk finger passes through insulating layer
It is arranged on the n type semiconductor layer in groove, there is no block and absorb the problem of active layer emits beam.Multiple branches simultaneously
Finger extends outwardly from trunk finger, it is ensured that electric current is uniformly injected into p type semiconductor layer, and multiple branch's fingers with it is existing
The finger part of P-type electrode is compared, and the area of occupied area greatly reduces, therefore the light for blocking and absorbing also greatly reduces,
So that the light emission luminance of LED chip greatly promotes.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of main view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 2 is a kind of top view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 3 is a kind of flow chart of the production method of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 4 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Main view；
Fig. 5 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Top view；
Fig. 6 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Main view；
Fig. 7 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Top view；
Fig. 8 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Main view；
Fig. 9 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Top view；
Figure 10 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Main view；
Figure 11 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Top view.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit.Fig. 1 is provided in an embodiment of the present invention a kind of luminous
The main view of diode chip for backlight unit, Fig. 2 are a kind of top view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.Referring to Fig. 1
And Fig. 2, the light-emitting diode chip for backlight unit include substrate 10, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23, N-type electrode
31, P-type electrode 32 and insulating layer 40.N type semiconductor layer 21, active layer 22, p type semiconductor layer 23 are sequentially laminated on substrate 10
On, p type semiconductor layer 23 is equipped with the groove 100 for extending to n type semiconductor layer 21.N-type electrode 31 is arranged in groove 100
On n type semiconductor layer 21, N-type electrode 31 includes pad portion 31a and finger part 31b, one end of finger part 31b and N-type
The pad portion 31a connection of electrode 31, the other end of finger part 31b is to the direction of the pad portion 31a far from N-type electrode 31
Extend.P-type electrode 32 includes pad portion 32a, trunk finger 32b and multiple branch's finger 32c, the welding disk of P-type electrode 32
32a and multiple branch's finger 32c is divided to be arranged on p type semiconductor layer 23, insulating layer 40 and trunk finger 32b are successively set on
On n type semiconductor layer 21 in groove 100, one end of trunk finger 32b is connect with the pad portion 32a of P-type electrode 32, trunk
The other end of finger 32b extends to the direction of the pad portion 32a far from P-type electrode 32, one end point of each branch's finger 32c
It is not connect with trunk finger 32b, the other end of each branch's finger 32c extends to the direction far from trunk finger 32b.
The embodiment of the present invention is by being divided into trunk finger and multiple branch's fingers, trunk hand for the finger part of P-type electrode
Finger is arranged on the n type semiconductor layer in groove by insulating layer, and there is no block and absorb the problem of active layer emits beam.
Multiple branch's fingers extend outwardly from trunk finger simultaneously, it is ensured that and electric current is uniformly injected into p type semiconductor layer, and multiple points
Compared with the finger part of existing P-type electrode, the area of occupied area greatly reduces branch finger, therefore the light for blocking and absorbing
Also greatly reduce, so that the light emission luminance of LED chip greatly promotes.
Optionally, as shown in Fig. 2, trunk finger 32b can be parallel with finger part 31b.By by trunk finger and hand
Refer to that part is arranged in parallel, the region that can reduce groove occupancy as far as possible promotes the hair of LED chip to increase light-emitting area
Brightness.
Preferably, as shown in Fig. 2, the distance between trunk finger 32b and finger part 31b d1 can be 1 μm~20 μm,
Such as 10 μm.By limiting the distance between trunk finger and finger part, P-type electrode and N-type electrode distance are on the one hand avoided too
Short circuit closely is caused, on the other hand avoids P-type electrode and N-type electrode too big apart from region that is too far and causing groove to occupy, leads
Photoluminescence area reduces.
Further, as shown in Fig. 2, the distance between edge of finger part 31b and light-emitting diode chip for backlight unit d2 can
Think 1 μm~50 μm, such as 25 μm, N-type electrode is set close to the edge of LED chip, is not needed in N-type electrode and recess sidewall
Between area of isolation is set, thus reduce groove occupancy region, increase light-emitting area, promote the light emission luminance of LED chip.
It optionally, can as shown in Fig. 2, multiple branch's finger 32c can be arranged at intervals on the same side of trunk finger 32b
The electric current of P-type electrode to be uniformly injected into p type semiconductor layer, and it can be convenient the setting of trunk finger and finger part,
Reduce groove area, promotes the light emission luminance of LED chip.
Preferably, as shown in Fig. 2, multiple branch's finger 32c can be parallel to each other, be conducive to electric current and be uniformly injected into p-type half
Conductor layer.
Further, as shown in Fig. 2, the distance between two neighboring branch's finger 32c d3 can be definite value, be conducive to electricity
Stream is uniformly injected into each region of p type semiconductor layer.
Preferably, definite value can be 20 μm~200 μm, such as 100 μm.By limit between two neighboring branch's finger away from
From making it in suitable range, not only can guarantee that electric current is uniformly injected into p type semiconductor layer, but also branch's finger can be reduced as far as possible
Quantity.
In the present embodiment, the quantity of numbers of branches can be 3.
Optionally, as shown in Fig. 2, the pad portion 32a of each branch's finger 32c and branch's finger 32c and P-type electrode 32
Between trunk finger 32b between angle α can be obtuse angle.Branch's finger is arranged close to the pad portion of N-type electrode, favorably
It is uniformly injected into p type semiconductor layer in electric current.
Preferably, obtuse angle can be 100 °~170 °, such as 135 °, realize that effect is good.
Optionally, as shown in Fig. 2, length w1 of the trunk finger 32b on the extending direction perpendicular to trunk finger 32b can
Think 1 μm~5 μm, such as 3 μm.Width by limiting trunk finger subtracts as far as possible in the case where guaranteeing electric current normal transmission
The area of small occupied area increases light-emitting area, promotes the light emission luminance of LED chip to reduce the region of groove occupancy.
Optionally, as shown in Fig. 2, length of each branch's finger 32c on the extending direction perpendicular to branch finger 32c
W2 can be 1 μm~5 μm, such as 3 μm.By limiting the width of finger part, being uniformly injected into for electric current can be effectively realized, simultaneously
The size of groove is controlled, reduces the influence to light-emitting area as far as possible.
Specifically, the material of substrate 10 can be using one in sapphire, silicon, gallium nitride, silicon nitride, silicon carbide, glass
Kind, such as plain film Sapphire Substrate or graphical sapphire substrate (English: Patterned Sapphire Substrate, letter
Claim: PSS).The material of n type semiconductor layer 21 can use the gallium nitride (GaN) of n-type doping (such as silicon).Active layer 22 can wrap
It includes multiple Quantum Well and multiple quantum is built, multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can be with
Using InGaN (InGaN), the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 23 can use p-type
Adulterate the gallium nitride of (such as magnesium).The material of N-type electrode 31 and P-type electrode 32 can use gold (Au), aluminium (Al), nickel (Ni), platinum
(Pt), one of chromium (Cr), titanium (Ti) or a variety of.The material of insulating layer 40 can use silica (SiO2), silicon nitride
(SiN), titanium dioxide (TiO2One of).
Further, the thickness of n type semiconductor layer 21 can be 1 μm~5 μm, preferably 3 μm；N in n type semiconductor layer 21
The doping concentration of type dopant can be 1018/cm3~1019/cm3, preferably 5*1018/cm3.The thickness of Quantum Well can be
2.5nm~3.5nm, preferably 3nm；The thickness that quantum is built can be 9nm~20nm, preferably 15nm；The quantity of Quantum Well with
The quantity that quantum is built is identical, and the quantity that quantum is built can be 5~15, preferably 10.The thickness of p type semiconductor layer 23 can
Think 100nm~800nm, preferably 450nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 2318/cm3
~1020/cm3, preferably 1019/cm3.The thickness of insulating layer 40 can be 100nm~500nm, preferably 300nm.
Optionally, which can also include buffer layer, and buffer layer is arranged in substrate and n type semiconductor layer
Between, nuclearing centre is provided for epitaxial growth.
Specifically, the material of buffer layer uses aluminium nitride or aluminium gallium nitride alloy, such as AlxGa1-xN, 0 < x < 1, can alleviate
Lattice mismatch between substrate material and epitaxial material.
Further, buffer layer with a thickness of 0.5nm~5 μm, such as 2.5 μm.
Optionally, which can also include transparency conducting layer, and transparency conducting layer is arranged in P-type semiconductor
Between layer and P-type electrode.It is better than p type semiconductor layer using the ability extending transversely of transparency conducting layer, promotes P-type electrode injection
Electric current carries out extending transversely.
Specifically, the material of transparency conducting layer can using tin indium oxide (English: Indium tin oxide, referred to as:
ITO), one of zinc oxide (ZnO), zinc-tin oxide (ZTO), ZnO transparent conductive glass (GZO) of gallium doping.
Preferably, which can also include current barrier layer, and current barrier layer is arranged in P-type semiconductor
Between layer and transparency conducting layer, carry out the electric current of P-type electrode injection first in the transparent conductive layer extending transversely, then longitudinal injection
In p type semiconductor layer, to promote the extending transversely of electric current, the luminous efficiency of chip is improved.
Specifically, the material of current barrier layer can use silica (SiO2), silicon nitride (SiN), titanium dioxide
(TiO2One of).
Optionally, which can also include passivation layer, and passivation layer setting removes p-type in p type semiconductor layer
On region in region and groove except electrode settings area in addition to n type semiconductor layer setting area, to LED core
Piece is protected.
Specifically, the material of passivation layer can use silica (SiO2), silicon nitride (SiN), titanium dioxide (TiO2) in
One kind.
The embodiment of the invention provides a kind of production methods of light-emitting diode chip for backlight unit, are suitable for shown in production Fig. 1 and Fig. 2
Light-emitting diode chip for backlight unit.Fig. 3 is a kind of flow chart of the production method of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.
Referring to Fig. 3, which includes:
Step 201: successively growing n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Fig. 4 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Main view, Fig. 5 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 201 execution
Top view.Wherein, 10 substrate is indicated, 21 indicate n type semiconductor layer, and 22 indicate active layer, and 23 indicate p type semiconductor layer.Ginseng
See Fig. 4 and Fig. 5, what is stacked gradually on substrate 10 is n type semiconductor layer 21, active layer 22 and p type semiconductor layer 23.
Specifically, which may include:
Using metallo-organic compound chemical gaseous phase deposition (English: Metal Organic Chemical Vapor
Deposition, referred to as: MOCVD) technology successively grows n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Optionally, when the light-emitting diode chip for backlight unit further includes buffer layer, then buffer layer is first formed on the substrate, then slow
It rushes and successively grows n type semiconductor layer, active layer and p type semiconductor layer on layer.Specifically, buffer layer can use MOCVD technology
It grows, it can also be using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD) technology
It deposits.
Step 202: the groove for extending to n type semiconductor layer is opened up on p type semiconductor layer.
Fig. 6 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Main view, Fig. 7 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 202 execution
Top view.Wherein, 100 groove is indicated.Referring to Fig. 6 and Fig. 7, groove 100 extends to N-type semiconductor from p type semiconductor layer 23
Layer 21.
Specifically, which may include:
The photoresist of certain figure is formed on p type semiconductor layer using photoetching technique, photoresist is arranged on dielectric layer
On region in addition to groove region；
Dry etching does not have the p type semiconductor layer of photoresist overlay and active layer, forms groove；
Remove photoresist.
In specific implementation, the photoresist that certain figure is formed using photoetching technique may include:
It is laid with a layer photoresist；
Photoresist is exposed by the mask plate of certain figure；
Photoresist after exposure is impregnated in developer solution, part photoresist is dissolved, the photoresist left is schemed needed for being
The photoresist of shape.
It optionally, can be after groove formation, in p-type when the light-emitting diode chip for backlight unit further includes transparency conducting layer
Transparency conducting layer is formed on semiconductor layer；Transparency conducting layer can also be first formed on p type semiconductor layer, then in transparency conducting layer
It is upper to form the groove for extending to n type semiconductor layer.Specifically, the forming process of transparency conducting layer can include: first to be laid with thoroughly
Bright conductive layer recycles photoetching technique and lithographic technique graphical to transparency conducting layer.
Preferably, when the light-emitting diode chip for backlight unit further includes current barrier layer, then electricity is first formed on p type semiconductor layer
Flow barrier, then transparency conducting layer is formed on current barrier layer and p type semiconductor layer.Specifically, the formation of current barrier layer
Process may include: first to be laid with current barrier layer, recycle photoetching technique and lithographic technique graphical to current barrier layer.
Step 203: forming insulating layer on the n type semiconductor layer in groove.
Fig. 8 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Main view, Fig. 9 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 203 execution
Top view.Wherein, 40 insulating layer is indicated.Referring to Fig. 8 and Fig. 9, the n type semiconductor layer in groove 110 is arranged in insulating layer 40
On 21.
Specifically, which may include:
In groove and insulating materials is laid on p type semiconductor layer；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist is arranged in insulating layer location
On domain；
Wet etching does not have the insulating layer of photoresist overlay, and the insulating materials left forms insulating layer；
Remove photoresist.
Step 204: N-type electrode being set on the n type semiconductor layer in groove, is set on p type semiconductor layer and insulating layer
Set P-type electrode.
In the present embodiment, N-type electrode includes pad portion and finger part, one end of finger part and N-type electrode
The other end of pad portion connection, finger part extends to the direction of the pad portion far from N-type electrode.P-type electrode includes weldering
Disc portion, trunk finger and multiple branch's fingers, the pad portion of P-type electrode and multiple branch's fingers are arranged at p-type and partly lead
On body layer, trunk finger is arranged on the insulating layer, and one end of trunk finger and the pad portion of P-type electrode connect, trunk finger
The other end to far from P-type electrode pad portion direction extend, one end of each branch's finger respectively with trunk finger connect
It connects, the other end of each branch's finger extends to the direction far from trunk finger.
Figure 10 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Main view, Figure 11 is production method provided in an embodiment of the present invention light-emitting diodes tube core for being formed after step 204 execution
The top view of piece.Wherein, 31 N-type electrode is indicated, 32 indicate P-type electrode.Referring to Figure 10 and Figure 11, N-type electrode 51 is arranged recessed
On n type semiconductor layer 21 in slot 100, P-type electrode 32 is arranged on p type semiconductor layer 23 and insulating layer 40.
Optionally, which may include:
Using removing P on region of the photoetching technique in groove in addition to N-type electrode region and p type semiconductor layer
Photoresist is formed on region except type electrode region；
Electrode material is laid on photoresist, n type semiconductor layer and p type semiconductor layer；
The electrode material on photoresist and photoresist is removed, the electrode material on n type semiconductor layer forms N-type electrode, p-type
Electrode material on semiconductor layer forms P-type electrode.
The partial region of P-type electrode is located in the groove of setting N-type electrode, can reduce electrode and integrally goes out to LED chip
The adverse effect of light.P-type electrode is different with the setting area of N-type electrode simultaneously, and the two can be used with along in processing step
It is formed, cost of implementation can be reduced.
Optionally, when the light-emitting diode chip for backlight unit further includes passivation layer, then after N-type electrode and P-type electrode are formed,
In region of the p type semiconductor layer in addition to P-type electrode setting area and groove in addition to n type semiconductor layer setting area
Region on form passivation layer.Specifically, the forming process of passivation layer may include: first to be laid with passivation layer, recycle photoetching skill
Art and lithographic technique are graphical to passivation layer.
It should be noted that using photoetching technique and lithographic technique to certain layer (transparency conducting layer, current barrier layer or blunt
Change layer) patterned process can be similar with the forming process of groove, therefore is no longer described in detail one by one.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of light-emitting diode chip for backlight unit, which is characterized in that the light-emitting diode chip for backlight unit includes substrate, n type semiconductor layer, has
Active layer, p type semiconductor layer, N-type electrode, P-type electrode and insulating layer；The n type semiconductor layer, the active layer and the p-type
Semiconductor layer stacks gradually over the substrate, and the p type semiconductor layer is equipped with and extends to the recessed of the n type semiconductor layer
Slot；On the n type semiconductor layer of the N-type electrode setting in the groove, the N-type electrode includes pad portion and finger section
Point, one end of the finger part is connect with the pad portion of the N-type electrode, and the other end of the finger part is to far from institute
The direction for stating the pad portion of N-type electrode extends；The P-type electrode includes pad portion, trunk finger and multiple branch's fingers,
The pad portion of the P-type electrode and the multiple branch's finger are arranged on the p type semiconductor layer, the insulating layer and
The trunk finger stacks gradually on n type semiconductor layer in the groove, one end of the trunk finger and p-type electricity
The pad portion of pole connects, and the other end of the trunk finger extends to the direction of the pad portion far from the P-type electrode, respectively
One end of a branch's finger is connect with the trunk finger respectively, and the other end of each branch's finger is to far from described
The direction of trunk finger extends.
2. light-emitting diode chip for backlight unit according to claim 1, which is characterized in that the trunk finger and the finger part
In parallel.
3. light-emitting diode chip for backlight unit according to claim 2, which is characterized in that the trunk finger and the finger part
The distance between be 1 μm~20 μm.
4. light-emitting diode chip for backlight unit according to claim 3, which is characterized in that the finger part and the light-emitting diodes
The distance between edge of tube chip is 1 μm~50 μm.
5. light-emitting diode chip for backlight unit according to any one of claims 1 to 4, which is characterized in that the multiple branch's finger
It is arranged at intervals on the same side of the trunk finger.
6. light-emitting diode chip for backlight unit according to claim 5, which is characterized in that the multiple branch's finger is parallel to each other.
7. light-emitting diode chip for backlight unit according to claim 6, which is characterized in that between two neighboring branch's finger
Distance is definite value.
8. light-emitting diode chip for backlight unit according to claim 7, which is characterized in that the definite value is 20 μm~200 μm.
9. light-emitting diode chip for backlight unit according to any one of claims 1 to 4, which is characterized in that each branch's finger
The angle between trunk finger between branch's finger and the pad portion of the P-type electrode is obtuse angle.
10. a kind of production method of light-emitting diode chip for backlight unit, which is characterized in that the production method includes:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on substrate；
The groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Insulating layer is formed on n type semiconductor layer in the groove；
N-type electrode is set on n type semiconductor layer in the groove, is set on the p type semiconductor layer and the insulating layer
Set P-type electrode；The N-type electrode includes pad portion and finger part, one end of the finger part and the N-type electrode
The other end of pad portion connection, the finger part extends to the direction of the pad portion far from the N-type electrode；The P
Type electrode includes pad portion, trunk finger and multiple branch's fingers, the pad portion of the P-type electrode and the multiple branch
Finger is arranged on the p type semiconductor layer, and the trunk finger is arranged on the insulating layer, and the one of the trunk finger
End is connect with the pad portion of the P-type electrode, the pad portion of the other end of the trunk finger to the separate P-type electrode
Direction extend, one end of each branch's finger connect with the trunk finger respectively, each branch's finger it is another
One end extends to the direction far from the trunk finger.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811567405.8A CN109786533A (en) | 2018-12-20 | 2018-12-20 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811567405.8A CN109786533A (en) | 2018-12-20 | 2018-12-20 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871519A (en) * | 2021-09-30 | 2021-12-31 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871519A (en) * | 2021-09-30 | 2021-12-31 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113871519B (en) * | 2021-09-30 | 2024-03-08 | 安徽三安光电有限公司 | Light-emitting diode and manufacturing method thereof |
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